BQ2024资料
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(3,00 mm x 3,00 mm)Actual Sizewww.ti.com
FEATURESDESCRIPTION
APPLICATIONS
1DBZP
bq2024ACKAGE(TOPVIEW)
SDQ
VSSVSS
23IDROM(64bits)
EPROMMEMORY(1536bits)
EPROMSTATUS(64bits)SDQCommunicationsControllerand8-BitCRCGenerationCircuitInternalBus
RAMBuffer(8bytes)SDQ1
2VSS3VSS
NCSDQVSS1
2
3LPPACKAGE(BOTTOMVIEW)bq2024SLUS770–MAY2007
1.5K-BITSERIALEPROMWITHSDQINTERFACE
•1536BitsofOne-TimeProgrammable(OTP)Thebq2024isa1.5K-bitserialEPROMcontainingaEPROMForStorageOfUser-Programmablefactory-programmed,unique48-bitidentification
ConfigurationDatanumber,8-bitCRCgeneration,andthe8-bitfamily
code(09h).A64-bitstatusregistercontrolswrite•Factory-ProgrammedUnique64-Bitprotectionandpageredirection.IdentificationNumber
Thebq2024SDQ™interfacerequiresonlyasingle•Bus-InterfaceArchitectureAllowingMultipleconnectionandagroundreturn.TheDATApinisbq2024'sAttachedtoaSingleHostalsothesolepowersourceforthebq2024.Thebus•Single-WireInterfacetoReduceCircuitBoardarchitectureallowsmultipleSDQdevicestobeRoutingconnectedtoasinglehost.•SynchronousCommunicationReducesHostThesmallsurface-mountpackageoptionssavesInterruptOverheadprinted-circuit-boardspace,whilethelowcostmakes•NoStandbyPowerRequireditidealforapplicationssuchasbatterypack
configurationparameters,recordmaintenance,asset•AddressSpaceBackwardCompatibleWithtracking,product-revisionstatus,andaccess-codebq2022Asecurity.•8-byteRAMBufferforFasterWrite
•PageAddressRedirectionORDERINGINFORMATION(1)
•15KVIEC61000-4-2AirChargeonSDQPACKAGEDDEVICES(3)TA(2)•Availableina3-PinSOT23PackageandTO-92PARTNUMBERPACKAGESTATUSPackage–20°Ctobq2024DBZRSOT23-3Production70°Cbq2024LPRTO-92Preview
(1)Forthemostcurrentpackageandorderinginformation,see•SecurityEncodingthePackageOptionAddendumattheendofthisdocument,•InventoryTrackingorseetheTIWebsiteatwww.ti.com.(2)Devicespecifiedtocommunicateat–40°Cto85°C.•Product-RevisionMaintenance(3)Thedeviceisavailableonlyintapeandreelwithabase•Battery-PackIdentificationquantityof3000unitsforthebq2024DBZRand2000unitsforthebq2024LPR.
BLOCKDIAGRAM
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
SDQisatrademarkofTexasInstruments.
UNLESSOTHERWISENOTEDthisdocumentcontainsCopyright©2007,TexasInstrumentsIncorporatedPRODUCTIONDATAinformationcurrentasofpublicationdate.ProductsconformtospecificationsperthetermsofTexasInstrumentsstandardwarranty.Productionprocessingdoesnotnecessarilyincludetestingofallparameters.元器件交易网www.cecb2b.comwww.ti.com
DCELECTRICALCHARACTERISTICS
ACSWITCHINGCHARACTERISTCSbq2024SLUS770–MAY2007
Thesedeviceshavelimitedbuilt-inESDprotection.TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
overoperatingfree-airtemperaturerangeunlessotherwisenoted(1)
UNIT
VPUDCvoltageappliedtodata–0.3Vto7V
IOLLow-leveloutputcurrent40mA
ESDIEC61000-4-2AirdischargeDatatoVSS,VSStodata15kV
TAOperatingfree-airtemperaturerange–20°Cto70°C
TA(Comm)Communicationfree-airtemperaturerangeCommunicationisspecifiedbydesign–40°Cto85°C
TstgStoragetemperaturerange–55°Cto125°C
Leadtemperature(soldering,10s)260°C
(1)Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperatingconditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
TA=–20°Cto70°C;VPU(min)=2.65VDCto5.5VDC,allvoltagesrelativetoVSS
PARAMETERTESTCONDITIONMINTYPMAXUNIT
IDATASupplycurrentVPU=5.5V20µA
Logic0,VPU=5.5V,IOL=4mA,SDQpin0.4VOLLow-leveloutputvoltageVLogic0,VPU=2.65V,IOL=2mA0.4
VOHHigh-leveloutputvoltageLogic1VPU5.5
IOLLow-leveloutputcurrent(sink)VOL=0.4V,SDQpin4mA
VILLow-levelinputvoltageLogic00.8V
VIHHigh-levelinputvoltageLogic12.2V
VPPProgrammingvoltage11.512V
TA=–20°Cto70°C;VPU(min)=2.65VDCto5.5VDC,allvoltagesrelativetoVSS
PARAMETERTESTCONDITIONMINTYPMAXUNIT
tcBitcycletime(1)60120µs
tWSTRBWritestartcycle(1)115µs
tWDSUWritedatasetup(1)tWSTRB15µs
tWDHWritedatahold(1)(2)60tcµs
1trecRecoverytime(1)µsFormemorycommandonly5
tRSTRBReadstartcycle(1)113µs
tODDOutputdatadelay(1)tRSTRB13µs
tODHOOutputdatahold(1)1760µs
tRSTResettime(1)480µs
tPPDPresencepulsedelay(1)1560µs
tPPPresencepulse(1)60240µs
tEPROGEPROMprogrammingtime2500µs
tPSUProgramsetuptime5µs
tPRECProgramrecoverytime5µs
(1)5-kΩseriesresistorbetweenSDQpinandVPU.(SeeFigure1)(2)tWDHmustbelessthantctoaccountforrecovery.
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