IRGPC40U中文资料

ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current Q32AILMClamped Inductive Load Current R 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT4/24/2000• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generation• IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB packageBenefitsPD -91599AParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 2.1R θJC Junction-to-Case - Diode–––––– 3.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80WtWeight–––2 (0.07)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsW• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGBC20KD2 and IRGBC20MD2 products• For hints see design tip 97003 1IRG4BC20KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on)— 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—1421V GE = 15V t d(on)Turn-On Delay Time —54—t r Rise Time —34—T J = 25°Ct d(off)Turn-Off Delay Time —180270I C = 9.0A, V CC = 480V t f Fall Time —72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss —0.34—Energy losses include "tail"E off Turn-Off Switching Loss —0.30—mJ and diode reverse recovery E ts Total Switching Loss —0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time —51—T J = 150°C,See Fig. 11,14t rRise Time—37—I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time —220—V GE = 15V, R G = 50Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss—0.85—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —450—V GE = 0V C oes Output Capacitance—61—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —3755ns T J = 25°C See Fig.—5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 3.5 5.0A T J = 25°C See Fig.— 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —65138nC T J = 25°C See Fig.—124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —240—A/µs T J = 25°C See Fig.During t b—210—T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.49—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.27 2.8I C = 9.0A V GE = 15V— 3.01—V I C = 16ASee Fig. 2, 5— 2.43—I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-10—mV/°CV CE = V GE , I C = 250µA g feForward Transconductance T 2.9 4.3—S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 600V——1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7VI C = 8.0A See Fig. 13— 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureCollector-to-Emitter CurrentFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.81.21.62.02.42.83.2FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRG4BC20KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s)r r 1101001001000fdi /dt - (A/µs)I - (A )I RR MIRG4BC20KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit Figure20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.Case Outline TO-220AB0.55 (.022)0.46 (.018)3 X2.92 (.115)2.64 (.104)1.32 (.052)1.22 (.048)- B -4.69 (.185)4.20 (.165)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)1.15 (.045) M IN4.06 (.160)3.55 (.140)3 X3.96 (.160)3.55 (.140)3 X 0.93 (.037)0.69 (.027)0.36 (.014) M B A M10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)1.40 (.055)1.15 (.045)3 X2.54 (.100)2X1 2 34CONFORMS TO JEDEC OUTLINE TO-220ABD im e ns io ns in M illim e ters a nd (In c he s)LE A D A S S IG N M E N T S 1 - G A TE2 - C O LLE C TO R3 - EM IT TE R4 - C O LLE C TO RN O TE S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N TR O LLIN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C HES ).4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

Quarterly Reliability ReportforT0247 / T0220 Products Manufactured atIRGBIGBT / CoPackISSUE.3.October 1997Contents1Introduction2Reliability Information3Environmental Test Results4Environmental Test Conditions / Schematics 5Device Package and Frequency ListingsIntroductionThe reliability report is a summary of the test data collated since the implementation of the reliability programme.This report will be periodically updated typically on a quarterly basis.Future publications of this report will also include as appropriate additional information to assist the user in the interpretation of the data provided.The programme covers only IGBT/ CoPack manufactured products at IRGB,Holland Road,Oxted.The reliability data provided in this report are for the package types TO247and TO220.Further information regarding reliability data is available in the IR data book IGBT-3, pages E-65-E-72. This also, is available from the Oxted office.Reliability Engineering _____________________________________ Quality Manager _____________________________________Date _____________________________________Section2 Reliability InformationFit Rate / Equivalent Device HoursTraditionally,reliability results have been presented in terms of Mean-Time-To-Failure or Median-Time-To-Failure.While these results have their value,they do not necessarily tell the designer what he most needs to know.For example,the Median-Time-To-Failure tells the engineer how long it will take for half a particular lot of devices to fail.Clearly no designer wishes to have a50%failure rate within a reasonable equipment lifetime.Of greater interest,therefore,is the time to failure of a much smaller percentage of devices say1%or0.1%.For example,in a given application one failure per hundred units over five years is an acceptable failure rate for the equipment,the designer knows that time to accumulate1%failure of that components per unit,then no more than0.1%of the components may fail in five years.Therefore,the IGBT/CoPack reliability or operating-life data is presented in terms of the time it will take to produce a prescribed number of failures under given operating conditions.To obtain a perspective of failure rate from an example,let us assume that an electronic system contains1,000semiconductor devices,and that it can tolerate1% system failures per month. The equation for the device failure is:λ =Proportion allowed system failures X1X109=FITS In the case of the example,λ =0.01 Failures X1=109=14 FITS or 14 FITs or 14 failures per 109 devices hours.Using IGBT Reliability InformationClassic Bathtub Curve for failure rate of solid state devicesλ ( t )InfantReliability is the probability that a semiconductor device will perform its specified function in a given environment for a specified period of time.Reliability is quality over time & environmental conditions.Reliability can be defined as a probability of failure-free performance of a required function,under a specified environment,for a given period of time.The reliability of semiconductors has been extensively studied and the data generated from these works is widely used in industry to estimate the probabilities of system lifetimes.The reliability of a specific semiconductor device is unique to the technology process used in fabrication and to the external stress applied to the device.In order to understand the reliability of specific product like the IGBT it is useful to determine the failure rate associated with each environmental stress that IGBT's encounter.The values reported in this report are at a 60%upper confidence limit and the equivalent device hours at state of working temperature of 90°C.It has been shown that the failure rate of semiconductors in general.when followed for a long period of time,exhibits what has been called a "Bathtub Curve"when plotted against time for a given set of environmental conditions.tL o g F a i l u r eThe IGBT StructureThe silicon cross-section of an Insulated Gate Bipolar Transistor(IGBT),theterminal called Collector is,actually,the Emitter of the PNP.In spite of itssimilarity to the cross-section of a power MOSFET,operating of the twotransistors is fundamentally different,the IGBT being a minority carrier device.Except for the P+substrate is virtually identical to that of a power MOSFET,both devices share a similar polysilicon gate structure and P wells with N+source contacts.In both devices the N-type material under the P wells is sizedin thickness and reistivity to sustain the full voltage rating of the device.However,in spite of the many similarities,he physical operation of the IGBT iscloser to that of a bipolar transistor than to that of a power MOSFET.This isdue to the P+substrate which is responsible for the minority carrier injectioninto the N regtion and the resulting conductivity modulation,a significant shareof the conduction losses occur in the N region, typically 70% in a 500v device.The part number itself contains in coded form the key features of the IGBT.Anexplanation of the nomenclature in contained below.IR G4B C40S DDiode International Rectifier Speed DesignatorIGBT S StandardGeneration Modifier F FastVoltage Designator Die Size M Short Cicuit Fast Package Designator C 600v E 800v U UltraFastB T0220 F 900v G 1000v K Short Circuit UltraFastP T0247H 1200vBasic IGBT StructureSection3 Environmental Test ResultsT0247 PackageJunction Temperature :Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC30FD293441506002010800 2.01E+06456 IRGPC50FD292371506005920080 1.10E+0783TOTALS7930880 1.30E+0770 N Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC40U95381506002020080 3.73E+06245 IRGPC40U96201506002020080 3.73E+06245 IRGPC40UD292371506002010080 1.87E+06489 IRG4PC40UD296431506002020300 3.78E+06243 IRGPC50UD293461506002010800 2.01E+06456 IRGPH60UD29450150120010100809.37E+05977TOTALS11091420 1.61E+0757NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel LOW FREQUENCY ( Standard )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC20S95441506002020080 3.73E+06245 IRGBC40S96061506002020080 3.73E+06245TOTALS40401607.47E+06123 N Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC30F95371506002020080 3.73E+06245 IRGNC30FD296401506002020070 3.73E+06245 IRGBF30F96131509002020080 3.73E+06245TOTALS6060230 1.12E+0782NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:HIGH TEMPERATURE REVERSE BIAS (HTRB)T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC20K96131506002020080 3.73E+06245 IRGBC30U96051506002020080 3.73E+06245 IRGB440U96431504002020080 3.73E+06245TOTALS6060240 1.12E+0782NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:Junction Temperature:Tj = as specified belowVc = Ve = 0VVg = as specifiedN Channel MID FREQUENCY ( Fast )FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPF30F9642150202020070 2.46E+053724 IRGPC50FD29237150202020880 2.56E+053579TOTALS4040950 5.02E+051825 N Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC40U9538150202020080 2.46E+053722 IRGPC40U9620150202020080 2.46E+053722 IRG4PC50U9721150202022130 2.71E+053377 IRG4PC40UD29643150202020390 2.50E+053665TOTALS8082680 1.01E+06904NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:Junction Temperature:Tj = as specified belowVc = Ve = 0VVg = as specifiedN Channel LOW FREQUENCY ( Standard )FAILURE RATE @ DEVICE TEMP GATE ACTUAL FAILURES DEV-HRSTYPE BIAS TESTTIME#FITs(deg C)(hours)(note b)IRGBC20S954420200 2.46E+05IRGBC40S960520200 2.46E+05TOTALS400 4.92E+05N Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DATE TEMP QTY ACTUAL DEV-HRS90°C & 60% UCL TYPE BIAS@ 90°CTIME MODE FITs(V)(hours)(note a) IRGBC30F15020200803722 IRGBC30FD215020209503567 IRGBC30FD215020********* IRGBF30F15020200803722TOTALS81180921NOTESb. FAILURE MODES:T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vc = Ve = 0VVg = as specifiedN Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL DEV-HRSTYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)96131502020200803722960515020202008037229641150202020070372496431502020205403639TOTALS8080770925NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:TEMPERATURE & HUMIDITY (THB)T0247 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel MID FREQUENCY ( Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGPF30F96421002020000TOTALS2020000N Channel HIGH FREQUENCY ( Ultra-Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGPC40U953850020150431IRGPC40U962050020150441IRG4PC40UD296431002020510IRGPH60UD294505001010080TOTALS7060677NOTESb. F AILURE MODES:1.3devices failed@1504hrs85/85and4devices failed@1552HRS85/85all the failures were due to terminationstructure corrosion, caused by moisture ingression.T0220 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel LOW FREQUENCY ( Standard )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGBC20S95445002010080IRGBC30S96431002020510IRGBC40S96065002010080TOTALS6040670N Channel MID FREQUENCY ( Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGBC30F953760020100811IRGBF30F96139002010080IRGBC30FD296401002020510TOTALS6040671NOTESb. F AILURE MODES:11device failed@1008hrs85/85it was due to terminationstructure corrosion, caused by moisture ingression.T0220 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel HIGH FREQUENCY ( Ultra-Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRG4BC30U96411002020000IRGB440U96431002020510IRGBC20K961350020100831TOTALS6050593NOTESb. F AILURE MODES:13devices failed@1008hrs85/85all the failures were dueto termination structure corrosion,caused by moistureingression.T0247 PackageTemperature Cycle:Tmin = - 55°C, Tmax = + 150°CCycle time:25 minutesBias NoneN Channel MID / HIGH FREQUENCYDEVICE DATE QTY ACTUAL FAILURESTYPE CODE CYCLES#MODE(note b) IRGPC30FD293443910000IRGPC50FD292378021740IRGPC40U95382020080IRGPC40U96202020550IRGPC40UD292374010870IRG4PC40UD296432014960IRG4PC50U97212020860IRGPC50UD293463810000IRGPF30F96422020150IRGPH60UD294501010440TOTALS307159650NOTESb. FAILURE MODES:T0220 PackageTemperatre Cycle:Tmin = - 55°C, Tmax = + 150°CCycle Time25 minutesBias NoneN Channel LOW / MID / HIGH FREQUENCYDEVICE DATE QTY ACTUAL FAILURESTYPE CODE CYCLES#MODE(note b) IRGBC20S95442020620IRGBC40S96062020080IRGBC30S96432020170IRGBC30F95372020080IRGBF30F96132020320IRGBC20K96132020320IRGBC30U96052020080IRG4BC30U96142020150IRGB440U96432021070IRGBC30FD296402020770IRGBC30FD296432020430TOTALS220224090NOTESb. FAILURE MODES:POWER CYCLING (P/C) unbiasedT0247 PackageBias:Set to give ∆ T = 100°CTemperature:Tj = ∆ 100°CDuration:10000 CyclesTest Points:2500, 5000, 10000 NominalN Channel HIGH FREQUENCY ( Ultra-Fast )FAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGPC40U962020100000TOTALS20100000NOTESb. FAILURE MODES:T0247 PackagePressure:15 Ibs psigTemperature:121°CHumidity:100%Bias:NoneN Channel MID / HIGH FREQUENCYFAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGPF30F964220960IRGPC40U953820960IRGPC40U962020960IRG4PC40UD2964320960IRG4PC50U972120960TOTALS1004800NOTESb. FAILURE MODES:T0220 PackagePressure:15 Ibs psigTemperature:121°CHumidity:100%Bias:NoneN Channel LOW / MID / HIGH FREQUENCYFAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGBC20S954420960IRGBC30S964320960IRGBC40S960620960IRGBC30F953720960IRGBF30F961320960IRGBC20K961320960IRGBC30U960620960TOTALS1406720NOTESb. FAILURE MODES:Section4Environmental Test Conditions / SchematicsHIGH TEMPERATURE REVERSE BIAS (HTRB)Test circuit ConditionsBias:Vce = As required Temperature:Tmax Duration:2000 Hours nominalTest points:168, 500, 1000,1500, 2000, Hours nominal D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersV (BR)CES, I CES, I GES, V GE(th)High temperature reverse bias (HTRB)burn-in is to stress the devices with the applied voltage in the blocking mode while elevating the junction temperature.This will accelerate any blocking voltage degradation process.The primary failure mode for HTRB stress is a gradual degradation of the breakdown characteristics or V (BR)CES .This degradation has been attributed to the presence of foreign materials and polar/ionic contaminants.These materials,migrating under application of electric field at high temperature,can perturb the electric field termination structure.Extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test.Failures arising from this abuse can be virtually indistinguishable from true HTRB failures which results from the actual stress test.HIGH TEMPERATURE GATE BIAS (HTGB)Test circuit ConditionsBias:Vge = As required Temperature:Tmax Duration:2000 Hours nominal Test points:168, 500, 1000,1500, 2000 Hours nominal.D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersI CES,V GE(th)The purpose of High Temperature Gate Bias is to stress the devices with the applied bias to the gate while at elevated junction temperature to accelerate time dependent dielectric breakdown of the gate structure.The primary failure modes for long term gate stress is a rupture of the gate oxide,causing either a resistive short between gate-to-emitter or gate-to-collector or what appears to be a low breakdown diode between the gate and source.The oxide breakdown has been attributed to the degradation in time of existing defects in the thermally grown oxide.These defects can take form of localized thickness variations,structural anomalies or the presence of sub-micron particulate, within the oxide.As with HTRB,extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test.Failures arising from this abuse are virtually indistinguishable from true oxide breakdown which result from the actual stress test.TEMPERATURE & HUMIDITY (THB)Test circuit ConditionsBias:Vce = 100% of maximum ratedV (BR)CES up to 500V: 500V forall devices with rated V (BR)CESgreater than 500V *Temperature:85°CRelative Humidity:85%Duration:2000 Hours nominalTest points:168, 500, 1000,1500, 2000 Hours nominal.* Devices manufactured since weekcode 9640 the applied bias: V (BR)CES =Vmax or 100v which ever the lesser D = Diode for CoPack devices only PurposeFailure ModesSensitive ParametersV (BR)CES,V CE(on)Temperature and Humidity bias testing for non-hermetic packages is to subject the devices to extremes of temperature and humidity to examine the ability of the package to withstand the deleterious effect of the humid environment.There are two primary failure modes which have been observed.The first failure mode comes about as a result of the ingression of water molecules into the active area on the surface of the die.Once sufficient water has accumulated in the region of the electric field termination structure on the die,the perturbation of that field begins to degrade the breakdown characteristics of the device.The second failure mode that has been observed is due to cathodic corrosion of the aluminum emitter bonding pad.As with first failure mode,water will ingress to the top of the die.There,in the presence of applied bias,an electric current through the few monolayers of water will begin to cause the bond pad to dissolve.Eventually.the corrosion will proceed to the point where the current capability of the device is increased and become unstable.The dominance of either of these failure modes is basically determined by the amount of bias present during test.Under low bias conditions,the corrosion proceeds slowly,so the first failure mode will proceed very rapidly and the device will fail due to on-resistance before the breakdown characteristics can degrade.TEMPERATURE CYCLING (T/C) UnbiasedConditionsTemperature:Tmin = - 55°CTmax = + 150°CBias:UnbiasedDuration:2000 CyclesTest points:250,500,1000,1500,2000 NominalPurposeTemperature Cycling simulates the extremes of thermal stresses which devices willencounter in the actual circuit applications in combination with potentially extremeoperating ambient temperatures.Some equipment is destined to be used in extremeenvironments, and subject to daily temperature cycles.Failure ModesThe primary failure mode for temperature cycling is a thermal fatigue of the silicon/metalinterfaces and metal/metal interfaces.The fatigue results from thermomechanicalstresses due to heating and cooling and will cause electrical or thermal performance todegrade.If the degradation occurs at the header/die interface,then the thermal impedance,RθJCwill begin to increase well before any electrical effect is seen.If the degradation occurs at the wire bond/die interface or the wire bond/bond postinterface,then on resistance,V CE(on),will slowly increase or become unstable with time.The thermal impedance,when measured during this time,may appear to decrease orchange erratically.The mechanical stresses from the temperature can also propagate fractures in the siliconwhen the die is thermally mismatched to the solder/heat sink system.These fractureswill manifest themselves in the form of shorted gates or degraded breakdowncharacteristics (V(BR)CES)Sensitive ParametersI CES,V(BR)CES, RθJC,V CE(on)POWER CYCLING (P/C) Unbiased Test circuit ConditionsBiasSet to give ∆ T = 100°C TemperatureTj = ∆ 100°CDuration10000 Cycles Test points D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersI CES , V (BR)CES ,R θJC , V CE(on)The purpose of Power Cycling is to simulate the thermal and current pulsing stresses which devices will encounter in actual circuit applications when either the equipment is turned on and off or power is applied to the device in short bursts interspersed with quiescent,low power periods.The simulation is achieved by the on/off application of power to each device while they are in the active linear region.The primary failure mode for power cycling is a thermal fatigue of the silicon/metal interfaces and metal/metal interfaces.The fatigue,due to the thermomechanical stresses from the heating and cooling,will cause electrical or thermal performance or degrade.If the degradation occurs at the header/die interface,then the thermal impedance R θJC ,will begin to increase well before any electrical effect is seen.If the degradation occurs at the wire bond/die interface or the wire bond/post interface,then on resistance,V CE(on),will slowly increase or become unstable with time.The thermal impedance,when measured during this time may appear to decrease or change erratically.The mechanical stresses from the application of power can also propagate fractures in the silicon when the die is thermally mismatched to the solder/heat sink system.These fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics (V (BR)CES ).ACCELERATEDMOISTURE RESISTANCE (A/C)UnbiasedConditionsTemperature:121°CPressure:15Ibs psigBias:NoneDuration:96 Hours nominalTest points:96 HoursPurposeAccelerated Moisture Resistance test is performed to evaluate the moisture resistanceof non-hermetic packages.Severe conditions of pressure,humidity and temperatureare applied that accelerate the penetration of moisture through the interface of theencapsulant and the conductors that pass through it.Failure ModesThere are two failure modes which have been observed.The first mode,degradationof the breakdown characteristics of the devices, can occur.The second failure mode that has been observed is due to cathodic corrosion ofaluminum emitter bonding pad.Water will ingress to the top of the die.It is possiblefor contaminants to work their way into the active area of the device while underpressure in the presence of water.For that reason,the devices and test board arecleaned prior to use.Then,throughout the course of the testing,the parts and the testboards are never brought into contact with human contaminant.Sensitive ParametersV(BR)CES, V CE(on)Section5Device Package and Frequency ListingsT0247 Generation III PackagePart Number Channel Voltage Speed Hex Size Frequency Family IRGPC30S N600Standard3Low Frequency IRGPC40S N600Standard4Low Frequency IRGPC50S N600Standard5Low Frequency IRGPH20S N1200Standard2Low Frequency IRGPH30S N1200Standard3Low Frequency IRGPH40S N1200Standard4Low Frequency IRGPH50S N1200Standard5Low Frequency IRGPC20F N600Fast2Mid Frequency IRGPC20M N600Short Circuit Rated Fast2Mid Frequency IRGPC20MD2N600Short Circuit Rated Fast2Mid Frequency IRGPC30F N600Fast3Mid Frequency IRGPC30M N600Short Circuit Rated Fast3Mid Frequency IRGPC30FD2N600Fast3Mid Frequency IRGPC30MD2N600Short Circuit Rated Fast3Mid Frequency IRGPC40F N600Fast4Mid Frequency IRGPC40M N600Short Circuit Rated Fast4Mid Frequency IRGPC40FD2N600Fast4Mid Frequency IRGPC40MD2N600Short Circuit Rated Fast4Mid Frequency IRGPC50F N600Fast5Mid Frequency IRGPC50M N600Short Circuit Rated Fast5Mid Frequency IRGPC50FD2N600Fast5Mid Frequency IRGPC50MD2N600Short Circuit Rated Fast5Mid Frequency IRGPF20F N900Fast2Mid Frequency IRGPF30F N900Fast3Mid Frequency IRGPF40F N900Fast4Mid Frequency IRGPF50F N900Fast5Mid Frequency IRGPH20M N1200Short Circuit Rated Fast2Mid Frequency IRGPH30MD2N1200Short Circuit Rated Fast3Mid Frequency IRGPH40F N1200Fast4Mid Frequency IRGPH40M N1200Short Circuit Rated Fast4Mid Frequency IRGPH40FD2N1200Fast4Mid Frequency IRGPH40MD2N1200Short Circuit Rated Fast4Mid Frequency IRGPH50F N1200Fast5Mid Frequency IRGPH50M N1200Short Circuit Rated Fast5Mid Frequency IRGPH50FD2N1200Fast5Mid Frequency IRGPH50MD2N1200Short Circuit Rated Fast5Mid FrequencyIRGP420U N500Ultra-Fast2High Frequency IRGP430U N500Ultra-Fast3High Frequency IRGP440U N500Ultra-Fast4High Frequency IRGP440UD2N500Ultra-Fast4High Frequency IRGP450U N500Ultra-Fast5High Frequency IRGP450UD2N500Ultra-Fast5High Frequency IRGPC20K N600Short Circuit Rated Ultra-Fast2High Frequency IRGPC20U N600Ultra-Fast2High Frequency IRGPC20KD2N600Short Circuit Rated Ultra-Fast2High Frequency IRGPC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRGPC30U N600Ultra-Fast3High Frequency IRGPC30KD2N600Short Circuit Rated Ultra-Fast3High Frequency IRGPC30UD2N600Ultra-Fast3High Frequency IRGPC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRGPC40U N600Ultra-Fast4High Frequency IRGPC40KD2N600Short Circuit Rated Ultra-Fast4High Frequency IRGPC40UD2N600Ultra-Fast4High Frequency IRGPC50K N600Short Circuit Rated Ultra-Fast5High Frequency IRGPC50U N600Ultra-Fast5High Frequency IRGPC50KD2N600Short Circuit Rated Ultra-Fast5High Frequency IRGPC50UD2N600Ultra-Fast5High Frequency IRGPH50K N1200Short Circuit Rated Ultra-Fast5High Frequency IRGPH50KD2N1200Short Circuit Rated Ultra-Fast5High FrequencyT0247 Generation IV PackagePart Number Channel Voltage Speed Hex Size Frequency FamilyIRG4P254S N250Standard5Low Frequency IRG4PC30S N600Standard3Low Frequency IRG4PC40S N600Standard4Low Frequency IRG4PC50S N600Standard5Low FrequencyIRG4PC30F N600Fast3Mid Frequency IRG4PC30FD N600Fast3Mid Frequency IRG4PC40F N600Fast4Mid Frequency IRG4PC40FD N600Fast4Mid Frequency IRG4PC50F N600Fast5Mid Frequency IRG4PC50FD N600Fast5Mid Frequency IRG4PC30U N600Ultra-Fast3High Frequency IRG4PC30UD N600Ultra-Fast3High Frequency IRG4PC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRG4PC40U N600Ultra-Fast4High Frequency IRG4PC40UD N600Ultra-Fast4High Frequency IRG4PC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRG4PC40KD N600Short Circuit Rated Ultra-Fast4High Frequency IRG4PC50U N600Ultra-Fast5High Frequency IRG4PC50UD N600Ultra-Fast5High Frequency IRG4PH50U N1200Ultra-Fast5High Frequency IRG4PH50UD N1200Ultra-Fast5High FrequencyT0220 Generation III PackagePart Number Channel Voltage Speed Hex Size Frequency FamilyIRGBC20S N600Standard2Low Frequency IRGBC30S N600Standard3Low Frequency IRGBC40S N600Standard4Low FrequencyIRGBC20F N600Fast2Mid Frequency IRGBC20M N600Short Circuit Rated Fast2Mid Frequency IRGBC20FD2N600Fast2Mid Frequency IRGBC20MD2N600Short Circuit Rated Fast2Mid Frequency IRGBC30F N600Fast3Mid Frequency IRGBC30M N600Short Circuit Rated Fast3Mid Frequency IRGBC30FD2N600Fast3Mid Frequency IRGBC30MD2N600Short Circuit Rated Fast3Mid Frequency IRGBC40F N600Fast4Mid Frequency IRGBC40M N600Short Circuit Rated Fast4Mid Frequency IRGBF20F N900Fast2Mid Frequency IRGBF30F N900Fast3Mid Frequency IRGB420U N500Ultra-Fast2High Frequency IRGB420UD2N500Ultra-Fast2High Frequency IRGB430U N500Ultra-Fast3High Frequency IRGB430UD2N500Ultra-Fast3High Frequency IRGB440U N500Ultra-Fast4High Frequency IRGBC20K N600Short Circuit Rated Ultra-Fast2High Frequency IRGBC20U N600Ultra-Fast2High Frequency IRGBC20KD2N600Short Circuit Rated Ultra-Fast2High Frequency IRGBC20UD2N600Ultra-Fast2High Frequency IRGBC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRGBC30U N600Ultra-Fast3High Frequency IRGBC30KD2N600Short Circuit Rated Ultra-Fast3High Frequency IRGBC30UD2N600Ultra-Fast3High Frequency IRGBC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRGBC40U N600Ultra-Fast4High Frequency。

TJ = 25°C
tf
Fall time
td(on)
Turn-On delay time
tr
Rise time
— 65 —
— 30 —
IC = 25A, VCC = 196V
— 33 — ns RG = 10Ω, L=200μH, LS= 200nH
td(off) tf tst
EPULSE
Turn-Off delay time Fall time Shoot Through Blocking Time
2
/

240
VGE = 18V
200
VGE = 15V
VGE = 12V
160
VGE = 10V VGE = 8.0V
120
VGE = 6.0V
ICE (A)
80
40
0
0
4
8
12
16
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
––– 29 ––– ––– 65 ––– ––– 22 ––– — 36 — — 31 — — 112 —
S VCE = 25V, ICE = 25A nC VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight

⏹封装功能 大容量增强型，基于ARM 安全智能卡内核的国密安全芯片内嵌SM1、SM2、SM3、SM4国密加密算法RJMU401数据手册⏹内核：高性能32位ARM SC100 CPU — 双总线架构，DMA 加速，快速中断响应— 支持ARM 和Thumb 指令集— 三级流水线— 采用软内核技术，防止外部对其进行扫描 — 采用小端存储格式— 主频为32MHz ，可进行3、4分频，系统默认工作频率8M ⏹存储器— 8KB ROM— 18K RAM— 128～550KB 的FLASH 存储器⏹时钟、复位和电源管理— 1.6V~5.5V 供电— CPU 时钟可由软件配置为内部时钟— 内置32 MHz 高速RC 振荡器，支持3/4分频 — 内置多功能时钟发生电路— 内置32 KHz 低功耗RC 振荡器 ⏹多达6个定时器— 3个16位通用定时器、— 1个ETU 定时器— 1个Wake-up 定时器— 1个32位看门狗定时器⏹多种密码算法— 对称算法：DES 、T-DES 、AES 、SM1、SM4— 非对称算法：RSA 、SM2— 摘要算法：SM3、SHA-256⏹安全特性— 存储保护单元（MPU ）— 频率检测功能— 存储总线检测功能，防FIA 攻击 — 抗EMA/DEMA 攻击 — 硬件CRC16/32电路校验 — 硬件真随机发生器 — 防篡改检测电路 ⏹外围接口— 1路智能卡接口，符合ISO7816标准，支持T=0/T=1协议— 1路SWP 接口，速率高达1.2Mbps — 1路SPI 主从接口— 1路UART 接口— 高达15路GPIO ，支持多种中断方式，多达12路GPIO 可复用 ⏹应用市场— 城市一卡通PBOC 终端、一卡通、银行POS 机、移动无线支付等金融支付— SIM 卡、JA VA 卡、ESIM 卡等领域 — 嵌入式软件安全保护— 手机、通信模块、路由器、对讲机等数据加密 — 监控设备、自动化控制 VSOP8LSSOP20L1.1概述 (3)1.2系统架构 (4)2、性能参数 (6)2.1处理器系统 (6)2.2存储单元 (6)2.3中断控制器 (7)2.4时钟与定时器 (7)2.5安全性及物理防护 (8)2.6对外接口 (10)2.7算法性能 (11)2.8模块功耗性能 (12)2.9其他模块 (14)2.10模拟模块 (14)3、引脚定义 (15)3.1引脚定义图：SSOP_20L (15)3.2引脚定义图：VSOP_8L (16)4、接口电气特性 (17)4.1测试条件 (17)4.1.1 最小和最大数值 (17)4.1.2 典型数值 (17)4.27816接口电气特性 (17)4.2.1绝对最大额定值 (18)4.3SPI接口电气参数 (18)4.3.1绝对最大额定值 (19)5、电源模块设计及工作条件 (21)5.1电源电路模块设计 (21)5.2推荐工作参数 (22)6 、SPI功能描述 (23)6.1概述 (23)6.2时钟信号的相位和极性 (23)7、应用电路图 (25)7.1RJMU401FHO与STM32F103的7816参考电路 (25)7.2RJMU401FHO的SPI参考电路 (25)7.3RJMU401EHV与STM32F103的7816参考电路 (26)8、电气特性 (27)9、芯片封装信息 (28)10、订货信息 (30)附录一：简称及缩略语 (32)1、简介1.1 概述RJMU401安全芯片是一个基于32位RISC处理器的SOC芯片，具备高处理能力、高安全性、低功耗、低成本等特点。