2220SDF中文资料

1 D=1
0.5 0.3
0.2
0.1
0.1
0.05
0.03
0.01 10 µ
0.02 0.10s1hot
pulse
100 µ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c θch – c = 6.25 °C/W, Tc = 25 °C
PDM
PW T
D=
PW T
1m
10 m
5
2SK2202
Reverse Recovery Time trr (ns)
1000 500
Body–Drain Diode Reverse Recovery Time
200 100
50
20
di / dt = 50 A / µs, V GS = 0
Ta = 25 °C, Pulse Test
10
0.1 0.2 0.5 1 2
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
120
Gate to source breakdown voltage

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芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注：1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间 上升时间 关断延迟时间 下降时间 身体向前漏二极管 电压

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 50 40
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415

−40°C to 85°C
−40°C to 105°C
† Product Preview
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
元器件交易网
MSP430x22x2, MSP430x22x4 MIXED SIGNAL MICROCONTROLLER
Copyright 2006 Texas Instruments Incorporated
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
元器件交易网
MSP430x22x2, MSP430x22x4 MIXED SIGNAL MICROCONTROLLER
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
MSP430x22x4 device pinout, DA package
TEST /SBWTCK DVCC P2.5/Rosc DVSS XOUT /P2.7 XIN /P2.6 RST /NMI /SBWTDIO P2.0/ACLK /A0/OA 0I0 P2.1/TAINCLK /SMCLK /A1/OA 0O P2.2/TA 0/A2/OA 0I1 P3.0/UCB 0STE /UCA 0CLK /A5 P3.1/UCB 0SIMO /UCB 0SDA P3.2/UCB 0SOMI /UCB 0SCL P3.3/UCB 0CLK /UCA 0STE AVSS AVCC P4.0/TB 0 P4.1/TB 1 P4.2/TB 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 P1.7/TA 2/TDO /TDI P1.6/TA 1/TDI P1.5/TA 0/TMS P1.4/SMCLK /TCK P1.3/TA 2 P1.2/TA 1 P1.1/TA 0 P1.0/TACLK /ADC 10 CLK P2.4/TA 2/A4/VREF +/VeREF +/OA 1I0 P2.3/TA 1/A3/VREF − /VeREF − /OA 1I1/OA 1O P3.7/A7/OA 1I2 P3.6/A6/OA 0I2 P3.5/UCA 0RXD /UCA 0SOMI P3.4/UCA 0TXD /UCA 0SIMO P4.7/TBCLK P4.6/TBOUTH /A15 /OA 1I3 P4.5/TB 2/A14 /OA 0I3 P4.4/TB 1/A13 /OA 1O P4.3/TB 0/A12 /OA 0O