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TSM25N03CPRO中文资料

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TSM25N0325V N-Channel MOSFETTO-252Features● Advance Trench Process Technology● High Density Cell Design for Ultra Low On-resistanceApplication● Load Switch● Dc-DC Converters and Motors DriversOrdering InformationPart No.PackagePackingTSM25N03CP ROTO-2522.5Kpcs / 13” ReelAbsolute Maximum Rating (Ta = 25o C unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage V DS 25 V Gate-Source VoltageV GS ±20 V Continuous Drain Current, V GS @4.5V. I D 25 A Pulsed Drain Current, V GS @4.5VI DM100 A Continuous Source Current (Diode Conduction)a,bI S 20 A Single Pulse Drain to Source Avalanche Energy (V DD = 100V, V GS =10V, I AS =2A, L=10mH, R G =25Ω) EAS 45 mJ Ta = 25oC 60 Maximum Power Dissipation Ta = 70o CP D 23 WOperating Junction TemperatureT J +150 o C Operating Junction and Storage Temperature RangeT J , T STG-55 to +150oCThermal PerformanceParameterSymbol Limit Unit Lead Temperature (1/8” from case) T L10SJunction to Case Thermal ResistanceR ӨJC 1.8 o C/W Junction to Ambient Thermal Resistance (PCB mounted) R ӨJA40oC/WNotes:a. Maximum DC current limited by the packageb. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.PRODUCT SUMMARY V DS (V) R DS(on)(m Ω)I D (A)14 @ V GS = 10V 25 2519 @ V GS = 4.5V25Pin Definition: 1. Gate 2. Drain 3. SourceBlock DiagramN-Channel MOSFETTSM25N0325V N-Channel MOSFETElectrical Specifications (Ta = 25o C unless otherwise noted)ParameterConditionsSymbolMinTypMaxUnitStaticDrain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 25 -- -- V Gate Threshold Voltage V DS = V GS , I D = 250uA V GS(TH) 1.0 1.9 3.0 V Gate Body LeakageV GS = ±20V, V DS = 0V I GSS -- -- ±100 nA Zero Gate Voltage Drain Current V DS = 25V, V GS = 0V I DSS -- -- 1.0 uA On-State Drain CurrentV DS ≥5V, V GS = 10V I D(ON) 25 -- -- A V GS = 4.5V, I D = 25A -- 14.5 19 Drain-Source On-State Resistance V GS = 10V, I D = 25A R DS(ON) -- 9.5 14 m Ω Forward Transconductance V DS = 15V, I D = 15A g fs -- 12 -- S Diode Forward Voltage I S = 20A, V GS = 0VV SD -- 0.87 1.5 V Dynamic bTotal Gate Charge Q g -- 14.726 Gate-Source Charge Q gs -- 2.5 -- Gate-Drain Charge V DS = 15V, I D = 25A, V GS = 10VQ gd -- 3 -- nCInput Capacitance C iss -- 921 -- Output CapacitanceC oss -- 208.7 -- Reverse Transfer Capacitance V DS = 15V, V GS = 0V, f = 1.0MHzC rss--108.2 -- pFSwitching cTurn-On Delay Time t d(on) -- 20.2 -- Turn-On Rise Time t r -- 5.9 -- Turn-Off Delay Timet d(off)-- 49.5 -- Turn-Off Fall Time V DD = 15V, R L = 15Ω, I D = 1A, V GEN = 10V, R G = 16Ωt f --16.7--nSNotes:a. pulse test: PW ≤300µS, duty cycle ≤2%b. For DESIGN AID ONLY, not subject to production testing.b. Switching time is essentially independent of operating temperature.TSM25N0325V N-Channel MOSFETElectrical Characteristics Curve (Ta = 25o C, unless otherwise noted)Output CharacteristicsTransfer CharacteristicsOn-Resistance vs. Drain CurrentGate ChargeOn-Resistance vs. Junction TemperatureSource-Drain Diode Forward VoltageTSM25N0325V N-Channel MOSFETElectrical Characteristics Curve (Ta = 25o C, unless otherwise noted)On-Resistance vs. Gate-Source VoltageThreshold VoltageMaximum Safe Operating AreaNormalized Thermal Transient Impedance, Junction-to-AmbientTSM25N0325V N-Channel MOSFETSOT-252 Mechanical DrawingMarking DiagramY = Year Code M = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeTO-252 DIMENSIONMILLIMETERS INCHES DIM MINMAXMINMAXA 2.3BSC 0.09BSC A1 4.6BSC 0.18BSCB 6.80 7.20 0.268 0.283C 5.40 5.60 0.213 0.220D 6.40 6.65 0.252 0.262E 2.20 2.40 0.087 0.094F 0.00 0.20 0.000 0.008G 5.20 5.40 0.205 0.213 G1 0.75 0.85 0.030 0.033 G2 0.55 0.65 0.022 0.026H 0.35 0.65 0.014 0.026I 0.90 1.50 0.035 0.059J 2.20 2.80 0.087 0.110K 0.50 1.10 0.020 0.043L 0.90 1.50 0.035 0.059 M1.301.700.0510.67TSM25N0325V N-Channel MOSFETNoticeSpecifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.。

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CC2540、BLE、低功耗蓝牙4.0、透传模块-硬件手册

CC2540、BLE、低功耗蓝牙4.0、透传模块-硬件手册

MT254xCoreS 硬件手册V1.0深圳市馒头科技有限公司产品型号说明馒头科技缩写版本编号直插; Board-底板版本更新记录目录第1章产品介绍 (5)1.1蓝牙4.0介绍 (5)1.2MT254xCoreS介绍 (5)第2章硬件资源 (6)2.1晶振 (6)2.2天线 (6)2.3电阻电容 (6)2.4对外接口 (6)第3章技术规格说明 (7)3.1外观尺寸 (7)3.2引脚分布图 (7)3.3引脚功能说明 (8)第4章开发事项 (9)4.1模块透传功能 (9)4.2BLE协议栈开发 (9)4.3IO复用功能表 (10)附录A 模块实物图 (12)第1章产品介绍1.1 蓝牙4.0介绍蓝牙4.0是2012年最新蓝牙版本，是3.0的升级版本；较3.0版本更省电、成本低、3毫秒低延迟、超长有效连接距离、AES-128加密等；通常用在蓝牙耳机、蓝牙音箱等设备上。

蓝牙4.0最重要的特性是省电，极低的运行和待机功耗可以使一粒纽扣电池连续工作数年之久。

此外，低成本和跨厂商互操作性，3毫秒低延迟、AES-128加密等诸多特色，可以用于计步器、心律监视器、智能仪表、传感器物联网等众多领域，大大扩展蓝牙技术的应用范围。

蓝牙4.0已经走向了商用，在最新款的Xperia Z、Galaxy S3、S4、Note2、SurfaceRT、iPhone 5、iPhone 4S、魅族MX3、Moto Droid Razr、HTC One X、小米手机2、The New iPad、iPad 4、MacBook Air、Macbook Pro，Nokia Lumia系列以及台商ACER AS3951系列/Getway NV57系列，ASUS UX21/31三星NOTE系列上都已应用了蓝牙4.0技术。

蓝牙4.0支持两种部署方式：双模式和单模式。

双模式中，低功耗蓝牙功能集成在现有的经典蓝牙控制器中，或再在现有经典蓝牙技术(2.1+EDR/3.0+HS)芯片上增加低功耗堆栈，整体架构基本不变，因此成本增加有限。

三星陶瓷电容规格书

三星陶瓷电容规格书


1.0
1.0
1.5
1.0 1.2 1.5 1.8
1.0 1.2 1.5 1.8
1.1 1.3 1.6 2.0
Capacitance Step
2.2
2.2
3.3
2.2 2.7 3.3 3.9
2.2 2.7 3.3 3.9
Symbol D G I J K
Rated Voltage(Vdc) 200V 500V 1000V 2000V 3000V
Multilayer Ceramic Capacitor
●7 THICKNESS OPTION
Symbol N A B C D E
Description of the Code Standard thickness (please refer to standard thickness table on next page) Thinner than standard thickness Thicker than standard thickness Standard Thickness High Q ( Low ` D.F ` ) Sn-100% (High-Q) Sn-100% (General)
● Application - High Frequency Circuit(Tuner, VCO, PAM etc) - General Power Supply Circuit(SMPS etc) - DC-DC Converter - General Electronic Circuit

Capacitance Change (ΔC : %)
± 15 ± 15
+22 ~ -82
Operation Temperature Range
20n03场效应管参数

20n03场效应管参数

20n03场效应管参数摘要：1.场效应管的基本原理2.场效应管的主要参数3.场效应管的分类与应用4.场效应管的优缺点5.场效应管在我国的发展现状与前景正文：场效应管（Field Effect Transistor，简称FET）是一种半导体器件，以其高输入电阻、低噪声和低功耗等特点在电子电路中得到广泛应用。

自从20世纪40年代问世以来，场效应管不断发展和改进，已经成为现代电子技术的重要组成部分。

本文将介绍场效应管的基本原理、主要参数、分类与应用，以及在我国的发展现状与前景。

一、场效应管的基本原理场效应管是依据电子在半导体材料中的移动规律而工作的。

它由源极、漏极和栅极三个端子组成。

当栅极电压发生变化时，栅极与漏极之间的电场强度随之改变，从而控制漏极的电流。

这种控制方式使得场效应管具有很高的输入电阻，降低了电路中的噪声和功耗。

二、场效应管的主要参数1.转移曲线：描述了栅极电压与漏极电流之间的关系。

转移曲线越陡峭，场效应管的灵敏度越高。

2.阈值电压：在场效应管的转移曲线中，栅极电压达到阈值电压时，漏极电流才开始线性增加。

阈值电压是场效应管的一个重要参数，影响其工作性能。

3.电流放大系数：在场效应管工作状态下，栅极电流与漏极电流之比。

电流放大系数越大，场效应管的放大能力越强。

4.输入电阻：在场效应管的输入端，栅极与源极之间的电阻。

输入电阻越高，电路中的噪声和功耗越小。

5.输出电阻：在场效应管的输出端，漏极与源极之间的电阻。

输出电阻越低，电路的带宽越宽。

三、场效应管的分类与应用1.金属氧化物半导体场效应管（MOSFET）：是目前应用最广泛的场效应管，以其低功耗、高频率和小型化等优点在集成电路中占据重要地位。

2.增强型：在场效应管的栅极与源极之间存在一层绝缘层，增强了栅极对漏极的控制能力。

3.耗尽型：与增强型相反，栅极与源极之间的绝缘层较薄，栅极电压对漏极电流的控制能力较弱。

4.绝缘栅双极型晶体管（IGBT）：是一种混合型场效应管，兼具场效应管的高输入电阻和双极型晶体管的电流放大能力，适用于中大功率应用。

TSM55N03中文资料

TSM55N03中文资料

TSM55N03 PreliminaryN-Channel Enhancement Mode MOSFETV DS = 25V I D = 55AR DS (on), Vgs @ 10V, Ids @ 30A = 6m Ω R DS (on), Vgs @ 4.5V, Ids @ 30A = 9m Ω FeaturesAdvanced trench process technology High Density Cell Design for Ultra Low On-Resistance Improved Shoot-Through FOMFully Characterized Avalanche Voltage and CurrentSpecially Designed for DC/DC Converters and MotorDrivers Block DiagramOrdering InformationPart No. Packing Package TSM55N03CPTape & ReelTO-252Absolute Maximum Rating (T A = 25 o C unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 25 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 55Pulsed Drain Current I DM 350AT A = 25 o C 70 WMaximum Power Dissipation T A = 75 o C P D42 W/o COperating Junction TemperatureT J +150 oCOperating Junction and Storage Temperature Range T J , T STG - 55 to +150 oCSingle Pulse Drain to Source Avalanche Energy (V DD = 100V, V GS =10V, I AS =2A, L=10mH, R G =25Ω)E AS 300mJ Thermal PerformanceParameter Symbol Limit UnitLead Temperature (1/8” from case) T L 10 S Junction-to-case Thermal ResistanceR θjc 1.8 Junction to Ambient Thermal Resistance (PCB mounted)R θja 40oC/WNote: 1. Maximum DC current limited by the package 2. 1-in 2 2oz Cu PCB boardPin assignment:1. Gate 2. Drain 3. SourceElectrical CharacteristicsT J = 25 o C, unless otherwise notedParameter Conditions SymbolMin Typ Max UnitStaticDrain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 30 -- -- V Drain-Source On-State Resistance V GS = 4.5V, I D = 30A R DS(ON) -- 7.5 9.0 m Ω Drain-Source On-State Resistance V GS = 10V, I D = 30A R DS(ON) -- 4.5 6.0 m Ω Gate Threshold Voltage V DS = V GS , I D = 250uA V GS(TH) 1.0 1.6 3.0 V Zero Gate Voltage Drain Current V DS = 25V, V GS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 20V, V DS = 0V I GSS -- -- ± 100 nA Gate ResisranceRg------Forward TransconductanceV DS =15V, I D = 15Ag fs -- -- -- SDynamicTotal Gate Charge Q g -- 26 -- Gate-Source Charge Q gs -- 6.0 -- Gate-Drain Charge V DS = 15V, I D = 25A, V GS = 10VQ gd --5.0 -- nC Turn-On Delay Time t d(on) -- 17 -- Turn-On Rise Time t r -- 3.5 --Turn-Off Delay Time t d(off) -- 40 -- Turn-Off Fall Time V DD = 15V, R L = 15Ω, I D = 1A, V GEN = 10V, R G = 6Ωt f --6.0 -- nSInput Capacitance C iss -- 2134 -- Output CapacitanceC oss -- 343 -- Reverse Transfer CapacitanceV DS = 15V, V GS = 0V, f = 1.0MHzC rss --134 -- pF Source-Drain DiodeMax. Diode Forward CurrentI S -- -- 20 A Diode Forward VoltageI S = 20A, V GS = 0VV SD -- 0.85 1.3 VNote: 1. pulse test: pulse width <=300uS, duty cycle <=2%2. Negligible, Dominated by circuit inductance.。