2SJ584LS资料

2SB1009SI-P10W2A40V100MHz2SB1010SI-P0.75W2A40V100MHz2SB1012KP-DARL8W1.5A120V2SB1013SI-P0.7W2A20V2SB1015SI-P25W3A60V0.4us2SB1016SI-P30W5A100V5MHz2SB1017SI-P25W4A80V9MHz2SB1018SI-P30W7A100V0.4us2SB1020P-DARL+D30W7A100V0.8us2SB1023P-DARL+D20W3A60VB=5K2SB1035SI-P0.9W1A30V100MHz2SB1039SI-P40W4A100V20MHz2SB1050SI-P1W5A30V120MHz2SB1055SI-P70W6A120V20MHz2SB1065SI-P10W3A60V2SB1066SI-P1W3A50V70MHz2SB1068SI-P0.75W2A20V180MHz2SB1071SI-P25W4A40V150MHz2SB1077P-DARL40W4A60VB>1K2SB1086SI-P20W1.5A160V50MHz2SB1098P-DARL+D20W5A100VB=802SB1099P-DARL+D25W8A100VB=6K2SB1100P-DARL+D30W10A100VB=62SB1109SI-P1.25W0.1A160V2SB1109SSI-P1.25W0.1A160V2SB1117SI-P1W3A30V280MHz2SB1120SI-P0.5W2.5A20V250MHz2SB1121TSI-P2A30V150MHz2SB1123SI-P0.5W2A60V150MHz2SB1132SI-P0.5W1A40V150MHz2SB1133SI-P25W3A60V40MHz2SB1134SI-P25W5A60V30W2SB1135SI-P30W7A60V10MHz2SB1136SI-P30W12A60V10MHz2SB1140SI-P10W5A25V320MHz2SB1141SI-P10W1.2A20V150MHz2SB1143SI-P10W4A60V140MHz2SB1146P-DARL25W6A120V2SB1149P-DARL15W3A100VB=10K2SB1151SI-P20W5A60V2SB1154SI-P70W10A130V30MHz2SB1156SI-P100W20A130V集电极-基极击穿电压BVcbo(V)集电极-发射极击穿电压BVceo(V)特征频率ft(Hz)资料2SB三极管参数型号PDF厂商特性用途集电极最大直流耗散功率Pcm(W)集电极最大允许直流电流Icm(A)2SB1162SI-P120W12A160V2SB1163SI-P150W15A170V2SB1166SI-P20W8A60V130MHz2SB1168SI-P20W4A120V130MHz2SB1182SI-P10W2A40V100MHz2SB1184SI-P15W3A60V70MHz2SB1185SI-P25W3A50V70MHz2SB1186SI-P20W1.5A120V50MHz2SB1187SI-P35W3A80V2SB1188SI-P100MHz2A40V2SB1202SI-P15W3A60V150MHz2SB1203SI-P20W5A60V130MHz2SB1204SI-P20W8A60V130MHz2SB1205SI-P10W5A25V320MHz2SB1212SI-P0.9W1.5A160V50MHz2SB1223P-DARL+D20W4A70V20MHz2SB1236SI-P1W1.5A120V50MHz2SB1237SI-P1W1A40V150MHz2SB1238SI-P1W0.7A80V100MHz2SB1240SI-P1W2A40V100MHz2SB1243SI-P1W3A60V2SB1254P-DARL70W7A160V2SB1255P-DARL100W8A160V2SB1258P-DARL+D30W6A100V2SB1274SI-P30W3A60V100MHz2SB1282P-DARL+D25W4A100V50MHz2SB1292SI-P30W5A80V2SB1302SI-P320MHz5A25V2SB1318P-DARL+D1W3A100V2SB1326SI-P0.3W5A30V120MHz2SB1329SI-P1.2W1A40V150MHz2SB1330SI-P1.2W0.7A32V100MHz2SB1331SI-P1.2W2A32V100MHz2SB1353ESI-P1.8W1.5A120V50MHz2SB1361SI-P100W9A150V15MHz2SB1370SI-P30W3A60V15MHz2SB1373SI-P2.5W12A160V15MHz2SB1375SI-P25W3A60V9MHz2SB1382P-DARL+D75W16A120V2SB1393SI-P2W3A30V30MHz2SB1420SI-P80W16A120V50MHz2SB1425SI-P1W2A20V90MHz2SB1429SI-P150W15A180V10MHz2SB1434SI-P1W2A50V110MHz2SB1468SI-P25W12A60/30V2SB1470P-DARL150W8A160V2SB1490P-DARL90W7A160VB>5K2SB1493P-DARL70W7A160/140V202SB1503P-DARL120W8A160VB>5K2SB1556P-DARL120W8A140VB>5K2SB1557P-DARL100W7A140VB>5K2SB1559P-DARL80W8A160VB>5K2SB1560P-DARL100W10A160V50MHz2SB1565SI-P25W3A80V15MHz2SB1587P-DARL+D70W8A160VB>5K2SB1624P-DARL60W6A110VB>5K2SB206GE-P80W30A80V2SB324GE-P0.25W1A32V2SB337GE-P30W7A50VLF-POWER2SB407GE-P30W7A30V2SB481GE-P6W1A32V15KHz2SB492GE-P6W2A25V2SB511ESI-P10W1.5A35V8MHz2SB524SI-P10W1.5A60V70MHz2SB527SI-P10W0.8A110V70MHz2SB531SI-P50W6A90V8MHz2SB536SI-P20W1.5A130V40MHz2SB537SI-P20W1.5A130V60MHz2SB541SI-P80W8A110V9MHz2SB544SI-P0.9W1A25V180MHz2SB546ASI-P25W2A200V5MHz2SB549SI-P10W0.8A120V80MHz2SB557SI-P80W8A120V2SB560SI-P0.9W0.7A100V100MHz2SB561SI-P0.5W0.7A25V2SB564SI-P0.8W1A30V2SB598SI-P0.5W1A25V180MHz2SB600SI-P200W15A200V4MHz2SB601P-DARL30W5A100V2SB605SI-P0.8W0.7A60V120MHz2SB621SI-N0.6W1.5A25V200MHz2SB621ASI-N0.75W1A50V200MHz2SB631SI-P8W1A100V2SB632SI-P10W2A25V100MHz2SB633SI-P40W6A100V15MHz2SB637SI-P0.3W0.1A50V200MHz2SB641SI-P120MHz0.1A30V2SB647SI-P0.9W1A120V140MHz2SB649ASI-P1W1.5A160V140MHz2SB656SI-P125W12A160V20MHz2SB673P-DARL+D40W7A100V0.8us2SB676P-DARL30W4A100V0.15us2SB681SI-N100W12A150V13MHz2SB688SI-P80W8A120V10MHz2SB700SI-P100W12A160V2SB703SI-P40W4A100V18MHz2SB705SI-P120W10A140V17MHz2SB707SI-P40W7A80VPOWER2SB709SI-P0.2W0.1A45V80MHz2SB716SI-P0.75W0.05A120V2SB720SI-P25W2A200V100MHz2SB727P-DARL+D50W6A120VB>1K2SB731SI-P10W1A60V75MHz2SB733SI-P1W2A20V>50MHz2SB734SI-P1W1A60V80MHz2SB739SI-P0.9W2A20/16V80MHz2SB740SI-P0.9W1A70V2SB744SI-P10W3A70V45MHz2SB750P-DARL+D35W2A60VB>1002SB753SI-P40W7A100V0.4us2SB764SI-P0.9A1A60V150MHz2SB765P-DARL+D30W3A120VB>1K2SB766SI-P200MHz1A30V2SB772SI-P10W3A40V80MHz2SB774SI-P0.4W0.1A30V150MHz2SB775SI-P60W6A100V13MHz2SB776SI-P70W7A120V15MHz2SB788SI-P0.4W0.02A120V150MHz2SB791P-DARL+D40W8A120VB>102SB794P-DARL+D10W1.5A60VB=72SB795P-DARL+D10W1.5A80VB<32SB808SI-P0.25W0.7A20V250MHz2SB810SI-P0.35W0.7A30V160MHz2SB815SI-P0.25W0.7A20V250MHz2SB816SI-P80W8A150V15MHz2SB817SI-P100W12A160V2SB817FSI-P90W12A160V15MHz2SB819SI-P1W1.5A50V150MHz2SB822SI-P0.75W2A40V100MHz2SB824SI-P30W5A60V30MHz2SB825SI-P40W7A60V10MHz2SB826SI-P40W12A60V10MHz2SB827SI-P80W7A60V10MHz2SB828SI-P80W12A60V10MHz2SB829SI-P90W15A60V20MHz2SB857SI-P40W4A50VNF/S-L2SB861SI-P30W2A200V2SB863SI-P100W10A140V15MHz2SB865P-DARL0.9W1.5A80V2SB873SI-P1W5A30V120MHz2SB882P-DARL+D40W10A70VB>5K2SB883P-DARL+D70W15A70VB=5K2SB884P-DARL30W3A110VB=4K2SB885P-DARL+D35W3A110VB=4K2SB891SI-P5W2A40V100MHz2SB892SI-P1W2A60V2SB895AP-DARLB=80001A60V2SB897P-DARL+D80W10A100VB>12SB908P-DARL+D15W4A80V0.15us2SB909SI-P1W1A40V150MHz2SB922SI-P80W12A120V20MHz2SB926SI-P0.75W2A30V2SB938AP-DARL+D40W4A60VB>1K2SB940SI-P35W2A200V30MHz2SB941SI-P35W3A60VPOWER2SB945SI-P40W5A130V30MHz2SB946SI-P40W7A130V30MHz2SB950AP-DARL+D40W4A80VB>1K2SB953ASI-P30W7A50V150MHz2SB955P-DARL+D50W10A120VB=42SB975P-DARL+D40W8A100VB>6K2SB976SI-P0.75W5A27V120MHz2SB985SI-P1W3A60V150MHz2SB986SI-P10W4A60V150MHz2SB988SI-P30W3A60V<400/220

2SJ304

2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)

2SJ304

DC−DC Converter, Relay Drive and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Unit

Drain−source voltage VDSS −60 V

Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID −14 Drain current Pulse (Note 1) IDP −56 A

Drain power dissipation (Tc = 25°C) PD 40 W

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics

2SJ546Silicon P Channel MOS FETHigh Speed Power SwitchingADE-208-638A (Z)2nd. EditionJun 1998Features• Low on-resistanceRDS(on) = 0.075Ω typ.• Low drive current.• 4V gate drive devices.• High speed switching.Outline

1231. Gate2. Drain3. SourceTO–220CFMDGS2SJ546

2Absolute Maximum Ratings (Ta = 25°C)ItemSymbolRatingsUnitDrain to source voltageVDSS–60VGate to source voltageVGSS±20VDrain currentID–15ADrain peak currentID(pulse)Note1–60ABody-drain diode reverse drain currentIDR–15AAvalanche currentIAP Note3–15AAvalanche energyEAR Note319mJChannel dissipationPch Note230WChannel temperatureTch150°CStorage temperatureTstg–55 to +150°CNote:1.PW ≤ 10µs, duty cycle ≤ 1 %2.Value at Tc = 25°C3.Value at Tch = 25°C, Rg ≥ 50 ΩElectrical Characteristics (Ta = 25°C)ItemSymbolMinTypMaxUnitTest ConditionsDrain to source breakdown voltageV(BR)DSS–60——VID = –10mA, VGS = 0Gate to source breakdown voltageV(BR)GSS±20——VIG = ±100µA, VDS = 0Zero gate voltege drain currentIDSS——–10µAVDS = –60 V, VGS = 0Gate to source leak currentIGSS——±10µAVGS = ±16V, VDS = 0Gate to source cutoff voltageVGS(off)–1.0—–2.0VID = –1mA, VDS = –10VStatic drain to source on stateRDS(on)—0.0750.095ΩID = –8A, VGS = –10V Note4resistanceRDS(on)—0.1050.155ΩID = –8A, VGS = –4V Note4Forward transfer admittance|yfs|6.511—SID = –8A, VDS = 10V Note4Input capacitanceCiss—850—pFVDS = –10VOutput capacitanceCoss—420—pFVGS = 0Reverse transfer capacitanceCrss—110—pFf = 1MHzTurn-on delay timetd(on)—12—nsVGS = –10V, ID = –8ARise timetr—75—nsRL = 3.75ΩTurn-off delay timetd(off)—125—nsFall timetf—75—nsBody–drain diode forward voltageVDF—–1.1—VIF = –15A, VGS = 0Body–drain diode reverserecovery timetrr—70—nsIF = –15A, VGS = 0diF/ dt =50A/µsNote:4.Pulse test2SJ546

2SJ451Silicon P-Channel MOS FET

ADE-208-3821st. Edition

Application

Low frequency power switching

Features

• Low on-resistance.

• Low drive power

• 2.5 V gate drive device.

• Small package (MPAK).

Outline

MPAK

1. Source2. Gate3. Drain

SD

G2132SJ451

2Absolute Maximum Ratings (Ta = 25°C)

ItemSymbolRatingsUnit

Drain to source voltageVDSS–20V

Gate to source voltageVGSS±20V

Drain currentID–0.2A

Drain peak currentID(pulse)*1–0.4A

Channel dissipationPch150mW

Channel temperatureTch150°C

Storage temperatureTstg–55 to +150°C

Note:1.PW ≤ 10 µs, duty cycle ≤ 1%Marking is "ZK–".

Electrical Characteristics (Ta = 25°C)

ItemSymbolMinTypMaxUnitTest conditions

Drain to source breakdownvoltageV(BR)DSS–20——VID = –100 µA, VGS = 0

Gate to source breakdownvoltageV(BR)GSS±20——VIG = ±100 µA, VDS = 0

Zero gate voltage drain currentIDSS——–1.0µAVDS = –16 V, VGS = 0