ASM2P3807AG-20-AT[1]

GreenChip同步整流控制器第1版——2022年6月7日产品数据手册1 简介TEA2093TS是针对开关电源的新一代同步整流器(SR)控制器IC系列中的一员。

它包含自适应栅极驱动器，以便在任意负载下达到最高效率。

TEA2093TS是一款专门用于非对称半桥反激式和标准反激式转换器次级侧同步整流的控制器IC。

它内置用于驱动SR MOSFET的检测级和驱动器级，对次级变压器绕组的输出进行整流。

TEA2093TS可以为具有低输出电压的电池充电应用或具有高侧整流的应用生成自己的供电电压。

TEA2093TS采用绝缘硅片(SOI)工艺制成。

2 特性和优势2.1 能效特性●自适应栅极驱动器，在任意负载下达到最高效率●空载运行时的典型电源电流低于200 μA2.2 应用特性●在低至0 V的宽输出电压范围内工作●能够处理高达120 V输入电压的漏检测引脚●对低输出电压工作自供电●对不使用辅助绕组的高侧整流自供电●使用标准和逻辑电平SR MOSFET●支持USB BC、USB PD和快充应用●TSOP6封装2.3 控制特性●自适应栅极驱动器，实现导通终止时的快速关闭●带有源栅极下拉的欠压锁定(UVLO)3 应用TEA2093TS适用于反激式电源。

在此类应用中，它可以驱动外部同步整流器MOSFET，这些MOSFET取代用于对变压器次级绕组上的电压进行整流的二极管。

它可用于所有需要高效率的电源，如：●充电器●电源适配器●非对称半桥反激式电源●具有极低和/或可变输出电压的反激式电源4 订购信息表1.订购信息型号封装名称说明版本TEA2093TS/1 TSOP6 塑料小型封装；6引脚SOT4575 标示表2.标记代码型号标记代码TEA2093TS/1 TEA20936 功能框图图1. TEA2093TS 功能框图导通调节关断调节V 和I参考欠压锁定 驱动器供电节能控制使能逻辑关闭7 引脚分布信息7.1 引脚分布图2.TEA2093TS引脚分布(SOT457)7.2 引脚说明表3.引脚说明符号引脚说明CAP 1 内部供电电压的电容输入GND 2 接地XV 3 外部电源输入GATE 4 SR MOSFET的栅极驱动器输出SOURCE 5 SR MOSFET的源极检测输入DRAIN 6 SR MOSFET的漏极检测输入8 功能说明8.1 简介TEA2093TS是一款用于非对称半桥反激式和标准反激式应用中的同步整流(SR)的控制器IC。

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

TOSHIBA BiCD Integrated Circuit Silicon MonolithicTB67S109AFNAG CLOCK-in controlled Bipolar Stepping Motor Driver・・・・・・・・・・・・Pin assignment (TB67S109AFNAG)Please mount the exposed pad of the HSSOP package to heatsink .TB67S109A Block diagramFunctional blocks/circuits/constants in the block chart etc. may be omitted or simplified for explanatory purposes.Application NotesAll the grounding wires of the TB67S109A must run on the solder mask on the PCB and be externally terminated at only one point. Also, a grounding method should be considered for efficient heat dissipation.Careful attention should be paid to the layout of the output, VDD(VM) and GND traces, to avoid short circuits across output pins or to the power supply or ground. If such a short circuit occurs, the device may be permanently damaged.Also, the utmost care should be taken for pattern designing and implementation of the device since it has power supply pins (VM, RS, OUT, GND) through which a particularly large current may run. If these pins are wired incorrectly, an operation error may occur or the device may be destroyed.The logic input pins must also be wired correctly. Otherwise, the device may be damaged owing to a current running through the IC that is larger than the specified current.Pin explanations TB67S109AFNAGINPUT/OUTPUT equivalent circuit (TB67S109A)The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes.Function explanation (Stepping motor)CLK FunctionEach up-edge of the CLK signal will shift the motor’s electrical angle per step.ENABLE functionis recommended.Step resolution setting and initial angle [Full step resolution][Half step resolution (Type B)]MO output shown in the timing chart is when the MO pin is pulled up. Timing charts may be simplified for explanatory purpose.MO output shown in the timing chart is when the MO pin is pulled up. Timing charts may be simplified for explanatory purpose. CWCCWStep setting and current percentageLO(Error detect signal) output functionWhen Thermal shutdown(TSD) or Over-current shutdown(ISD) is applied, the LO voltage will be switched to Low(GND) level.Decay functionADMD(Advanced Dynamic Mixed Decay) constant current controlThe Advanced Dynamic Mixed Decay threshold, which determines the current ripple level during current feedback control, is a unique value.fchopADMDth (Advanced Dynamic Mixed Decay threshold) Timing charts may be simplified for explanatory purpose.ADMD current waveform・When the next current step is higher :・mode.・When the next current step is lower :・OSCOutput transistor function modeVM VM VMCalculation of the Predefined Output CurrentFor PWM constant-current control, this IC uses a clock generated by the OSCM oscillator.The peak output current (Setting current value) can be set via the current-sensing resistor (RS) and the referencevoltage (Vref), as follows:Iout(max) = Vref(gain) ×Vref(gain) : the Vref decay rate is 1/ 5.0 (typ.)For example : In the case of a 100% setupwhen Vref = 3.0 V, Torque=100%,RS=0.51Ω, the motor constant current (Setting current value) will becalculated as:I out = 3.0V / 5.0 / 0.51Ω= 1.18 ACalculation of the OSCM oscillation frequency (chopper reference frequency)An approximation of the OSCM oscillation frequency (fOSCM) and chopper frequency (fchop)can be calculated by the following expressions.fOSCM=1/[0.56x{Cx(R1+500)}]………C,R1: External components for OSCM (C=270pF , R1=5.1kΩ => About fOSCM= 1.12MHz(Typ.)) fchop = fOSCM / 16………fOSCM=1.12MHz => fchop =About 70kHzIf chopping frequency is raised, Rippl of current will become small and wave-like reproducibility will improve.However, the gate loss inside IC goes up and generation of heat becomes large.By lowering chopping frequency, reduction in generation of heat is expectable.However, Rippl of current may become large.It is a standard about about 70 kHz. A setup in the range of 50 to 100 kHz is recommended.byanyis (exciting mode, operating time, and so on), ambient temperature, and heat conditions (board condition and so on).isavoidAC Electrical Specification (Ta = 25°C, VM = 24 V, 6.8 mH/5.7 Ω)Timing charts may be simplified for explanatory purpose.Package DimensionsWeight TBDg (typ.) P-HSSOP36-1116-0.65-001 (unit :mm)Notes on ContentsBlock DiagramsSome of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes.Equivalent CircuitsThe equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes.Timing ChartsTiming charts may be simplified for explanatory purposes.Application CircuitsThe application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage.Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits.Test CircuitsComponents in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment.IC Usage ConsiderationsNotes on handling of ICs(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause devicebreakdown, damage or deterioration, and may result in injury by explosion or combustion.(2)Use an appropriate power supply fuse to ensure that a large current does not continuously flow in thecase of overcurrent and/or IC failure. The IC will fully break down when used under conditions thatexceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormalpulse noise occurs from the wiring or load, causing a large current to continuously flow and thebreakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in thecase of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuitlocation, are required.(3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into thedesign to prevent device malfunction or breakdown caused by the current resulting from the inrushcurrent at power ON or the negative current resulting from the back electromotive force at power OFF.IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-inprotection functions. If the power supply is unstable, the protection function may not operate, causingIC breakdown. IC breakdown may cause injury, smoke or ignition.(4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negativeterminals of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute maximum rating, andexceeding the rating(s) may cause device breakdown, damage or deterioration, and may result ininjury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation or incorrectly to which current isapplied even just once.(5)Carefully select external components (such as inputs and negative feedback capacitors) and loadcomponents (such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as from input or negative feedback capacitor, the ICoutput DC voltage will increase. If this output voltage is connected to a speaker with low inputwithstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may causesmoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load(BTL) connection-type IC that inputs output DC voltage to a speaker directly.Points to remember on handling of ICsOvercurrent detection CircuitOvercurrent detection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the overcurrent detection circuits operate against the overcurrent, clear the overcurrent status immediately.Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the overcurrent detection circuit to operate improperly or IC breakdown may occur before operation. In addition, depending on the method of use and usage conditions, if overcurrent continues to flow for a long time after operation, the IC may generate heat resulting in breakdown.Thermal Shutdown CircuitThermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over-temperature, clear the heat generation status immediately.Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the thermal shutdown circuit to operate improperly or IC breakdown to occur before operation.Heat Radiation DesignWhen using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components.Back-EMFWhen a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design.RESTRICTIONS ON PRODUCT USE∙Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.∙This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.∙Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.∙PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MA Y CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative.∙Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.∙Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.∙The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.∙ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.∙Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.∙Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSESOCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.。

2N3773NPN Power TransistorsThe 2N3773 is a PowerBase t power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.Features•High Safe Operating Area (100% Tested) 150 W @ 100 V •Completely Characterized for Linear Operation•High DC Current Gain and Low Saturation V oltageh FE = 15 (Min) @ 8.0 A, 4.0 VV CE(sat) = 1.4 V (Max) @ I C = 8.0 A, I B = 0.8 A •For Low Distortion Complementary Designs•This is a Pb−Free DeviceMAXIMUM RATINGS (Note 1)Rating Symbol Value Unit Collector − Emitter Voltage V CEO140Vdc Collector − Emitter Voltage V CEX160Vdc Collector − Base Voltage V CBO160Vdc Emitter − Base Voltage V EBO7VdcCollector Current− Continuous− Peak (Note 2)I C1630AdcBase Current− Continuous− Peak (Note 2)I B415AdcTotal Power Dissipation @ T A = 25°C Derate above 25°C P D1500.855WW/°COperating and Storage JunctionTemperature RangeT J, T stg−65 to +200°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Indicates JEDEC Registered Data.2.Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance,Junction−to−CaseR q JC 1.17°C/W*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.TO−204CASE 1−07See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONMARKINGDIAGRAM16 A NPNPOWER TRANSISTORS140 V, 150 W2N3773GMEXAYYWWA= Assembly LocationYY= YearWW= Work WeekG= Pb−Free PackageELECTRICAL CHARACTERISTICS (T C= 25_C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 3)Collector−Emitter Breakdown Voltage (Note 4)(I C = 0.2 Adc, I B = 0)V CEO(sus)140−VdcCollector−Emitter Sustaining Voltage (Note 4)(I C = 0.1 Adc, V BE(off) = 1.5 Vdc, R BE = 100 Ohms)V CEX(sus)160−VdcCollector−Emitter Sustaining Voltage(I C = 0.2 Adc, R BE = 100 Ohms)V CER(sus)150−VdcCollector Cutoff Current (Note 4)(V CE = 120 Vdc, I B = 0)I CEO−10mAdcCollector Cutoff Current (Note 4)(V CE = 140 Vdc, V BE(off) = 1.5 Vdc)(V CE = 140 Vdc, V BE(off) = 1.5 Vdc, T C = 150_C)I CEX−−210mAdcCollector Cutoff Current(V CB = 140 Vdc, I E = 0)I CBO−2mAdcEmitter Cutoff Current (Note 4)(V BE = 7 Vdc, I C = 0)I EBO−5mAdc ON CHARACTERISTICS (Note 3)DC Current Gain(I C = 8 Adc, V CE = 4 Vdc) (Note 4)(I C = 16 Adc, V CE = 4 Vdc)h FE15560−−Collector−Emitter Saturation Voltage (I C = 8 Adc, I B = 800 mAdc) (Note 4)(I C = 16 Adc, I B = 3.2 Adc)V CE(sat)−−1.44VdcBase−Emitter On Voltage (Note 4)(I C = 8 Adc, V CE = 4 Vdc)V BE(on)− 2.2Vdc DYNAMIC CHARACTERISTICSMagnitude of Common−EmitterSmall−Signal, Short−Circuit, Forward Current Transfer Ratio(I C = 1 A, f = 50 kHz)|h fe|4−−Small−Signal Current Gain (Note 4)(I C = 1 Adc, V CE = 4 Vdc, f = 1 kHz)h fe40−−SECOND BREAKDOWN CHARACTERISTICSSecond Breakdown Collector Current with Base Forward Biasedt = 1 s (non−repetitive), V CE = 100 V, See Figure 12I S/b 1.5−Adc3.Pulse Test: Pulse Width = 300 m s, Duty Cycle v 2%.4.Indicates JEDEC Registered Data.ORDERING INFORMATIONDevice Package Shipping†2N3773G TO−204(Pb−Free)100 Unit / Tray†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifi-cations Brochure, BRD8011/D.V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )300Figure 1. DC Current Gain IC , COLLECTOR CURRENT (AMPS)5.050302010070h F E , D C C U R R E N T GA I NNPNPNPI C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G AI N 7.010200Figure 2. DC Current GainFigure 3. Collector Saturation Region 2.0I B , BASE CURRENT (AMPS)01.61.20.80.4Figure 4. Collector Saturation Region2.0I B , BASE CURRENT (AMPS)1.61.20.80.42.0I C , COLLECTOR CURRENT (AMPS)1.20.40V , V O L T A G E (V O L T S )Figure 5. “On” Voltage 1.60.8I C , COLLECTOR CURRENT (AMPS)V , V O L T A G E (V O L T S )Figure 6. “On” VoltageTYPICAL CHARACTERISTICSFigure 7. Output CapacitanceFigure 8. Input CapacitanceV CB , COLLECTOR −BASE VOLTAGE (V)V EB , EMITTER −BASE VOLTAGE (V)C O B , O U T P U T C A P A C I T A N C E (p F )C I B , I N P U T C A P A C I T A N C E (p F )Figure 9. Forward Bias Safe Operating AreaV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (A M P )There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 9 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)< 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.10080604020Figure 10. Power DeratingT C , CASE TEMPERATURE (°C)P O W E R D E R A T I N G F A C T O R (%)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSSCALE 1:1CASE 1−07ISSUE Z DATE 05/18/1988 TO−204 (TO−3)NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.ALL RULES AND NOTES ASSOCIATED WITHREFERENCED TO-204AA OUTLINE SHALL APPLY.STYLE 1:PIN 1.BASE2.EMITTER CASE:COLLECTOR STYLE 2:PIN 1.BASE2.COLLECTORCASE:EMITTERSTYLE 3:PIN 1.GATE2.SOURCECASE:DRAINSTYLE 4:PIN 1.GROUND2.INPUTCASE:OUTPUTSTYLE 5:PIN 1.CATHODE2.EXTERNAL TRIP/DELAYCASE:ANODESTYLE 6:PIN 1.GATE2.EMITTER CASE:COLLECTOR STYLE 7:PIN 1.ANODE2.OPENCASE:CATHODESTYLE 8:PIN 1.CATHODE #12.CATHODE #2CASE:ANODESTYLE 9:PIN 1.ANODE #12.ANODE #2CASE:CATHODEDIM MIN MAX MIN MAXMILLIMETERSINCHESA 1.550 REF39.37 REFB--- 1.050---26.67C0.2500.335 6.358.51D0.0380.0430.97 1.09E0.0550.070 1.40 1.77G0.430 BSC10.92 BSCH0.215 BSC 5.46 BSCK0.4400.48011.1812.19L0.665 BSC16.89 BSCN---0.830---21.08Q0.1510.165 3.84 4.19U 1.187 BSC30.15 BSCV0.1310.188 3.33 4.77ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

笔记本常用供电芯片大全线性稳压块：2951、LP2951、m5236、2950、AAT3200、AAT3680、AME8824、AMS1505、APL5912、APL5913、G9338、SC1565、MAX8863、MIC5205、SI91 83、开机芯片：东芝TMP87PM48U、TMP48U、TMP87PH48UIBM:TB6805F、TB6806F、TB6807F TB6808F、TB62501F、、BD4175KV、I/O芯片：PC97338、PC87391、PC87392、pc87393、SMSC系列：FDC37N869、FDC37N958、FDC37N972、LPC47N227/217、LPC47N252 LPC47N253、LPC47N254、LPC47N354、LPC47 N267键盘芯片：H8C/2471、H8/3434、H8/3431、H8S/2116V、PC87541 PC87570、PC87591 PC87594 PC97551 PC97554键盘芯片：具有开机功能：H8/3434、H8/3437、H8/2147、H8/2149、H8/2161、H 8/2168、PC87570、PC87591、H8S/XXX 、M38857、M38867、M38869系统供电芯片：ISL6228 ISL6232、MAX1630 MAX1631、MAX1632、MAX1633、MAX1634、MAX1635、MAX17003 E、MAX1901、MAX1902、MAX1904、MAX1977、MAX1999、MAX785、MAX786、MAX8734、LTC1628、LT3728L、LT3728LX、SB3052、SC1402、SC1403、SC1404、SC2450、TPS51020、TPS51120〈MAX1631、MAX1634、MAX1904 可互换〉〈MAX1632、MAX1635、MAX1902 可互换〉〈MAX786、SB3052 可互换＿老机型〉〈MAX8734、MAX1999可互换〉SC1402 (与MAX1632一样)IBM R40用LTC1628(与MAX1632差不多)索尼常用MAX785(奔2机器)辅助供电芯片：ADP3160、ADP3167、ADP3168、APW7057、APW7060、ISL6224、ISL6225、ISL6227、IPM6220A、MAXl540、MAXl541、MAX1623、MAX1626、MAX1627、MAX1644、MAX1710、MAX1711、MAXl712、MAX1714、MAX1715、MAX1717、MAX1718、MAX1809、MAX1844、MAX1845、MAX1992、MAXl993、MAX8505、MAX8550、MAX8632、MAX8743、MAX8794、SC1470、SC1474、SC1476、SC1485、SC1486、SCl486A、SC470、SI786LG、G2996、SWC1486、TPS51116、TPS51117、TPS51120、TPS51124、TPS54610、TPS54672、CPU供电芯片：ADP3166、ADP3170、ADP3180、ADP3181、ADP3203、ADP3421、AIC1567、ISL6215、ISL6218、ISL6223、ISL6227、ISL6260、ISL6262、LTC1436、LTC1736、LTC1709、LTC3716、LTC3735、MAX1532、MAX1710、MAX1711、MAX1712、MAX1714、MAX1717、MAX1718、MAX1830、MAXl831、MAX1897、MAX1907、MAX1987、MAX1988、MAX798、MAX8760、MAX8770、MAX8771、MAX8774、MAX8736SC451、SC452、SC1474、SC1476、供电芯片搭配使用：ADP3203/ADP3415、ADP3205+ADP3415、ADP3410+ADP3421、ADP3410+ADP3422、ADP3207+ADP3419、ADP3208+ADP3419电池充/放电控制芯片：AAI3680、ADP3801、ADP3806BQ24700、BQ2470l、BQ24702、BQ24703、DS2770、ISL6251、M61040FP、MAXl644 MAX1645、MAX1647、MAX1648、MAX745、MAX1736 MAX1772、M AX1773、MAX1870 MAX1873、MAX1908、MAX1909、MAX745、MAX8724、M AX8725、MAX8765、MB3878、MB3879、MB3887、MB39A126PFV、LT1505G、LTl505、LTC4008、TC490/591、TL494、TL594、OZ983、OZ985、笔记本电池电量检测芯片：BQ2040、BQ2060CPU温度控制芯片：MAX1617、MAX1020A、AD1020、AD1021、AD1030、AD103 0A、AD1031、CM8500、MAX1989、AD1020A、MAX6654、ADM1032、G781、L M26、网卡芯片：RTL8100、RTL8139、Intel-DA82562ET、RC82540、3COM、BCM440、BCM5702KBGA、88E8001、88E8055、82562EZ网卡隔离器：LF8423、LF-H80P、H-0023、H0024/42、H0019、ATPL-119(内部是线圈,非电路)声卡芯片：ES1921、ESS1980S、STAC9704、AU8810、4299-JQ、4297-JQ、AD1885、AD1984、8552TS、8542TS、CS4239-KQ、AD1981、AD19 81B、ADl888、ADl981、AD1986、ALC200、ALC201A、ALC202、ALC203、ALC258、ALC262、ALC655、ALC658、ALC660、ALC861、ALC880、ALC883、CMl9738、CS4205、CX20468、CX20549、CX20561 PT2353、(没声音,杂音,声小,查功放芯片)(开机时,没有声音,无声卡设备,查声卡芯片)音频功放芯片：APA2020、TPA0142、TPA0312、TPA6017、TPA0202、LM4835、L M4838、LM4861、LM4863、LM4880、LM4881、LM4882、LM4911、MAX9710、MAX9750、MAX9751、MAX9755、MA X9789、MAX9790、ESS1980S、8552TS、8542TS、TPA0302、AU8810 、BA7786、AN1294、AN12941、AN12942B、AN12943、G1420、PC卡信号芯片：R5C551、R5C552、R5C476、R54472、R5C593、SN0301520、P CIXXX、PC卡供电芯片：TPS2205、TPS2206、TPS2216、TPS2211、TPS2224、PU2211、M2562A、M2563A、M2564A、OZ2206、超级I/O：PC8394TIO芯片：PC系列：PC87591S（VPCQ01）、PC 87591L（VPC01）、PC97317IBWPC87393 VGJ、PC87591E-VLB、PC87591E (-VPCI01)/(VPCQ01)、PC97551-VP C、PC87570-ICC/VPC、PC87391VGJ、PC8394T、PC87392、PC87541L、PC87541VPC87591E-VLB、TB系列：TB62501F、TB62506F、TB6808F、ENE系列：KB3910QB0、KB910SFC1、KB3910SF、KB910QF、KB910QB4、KB9 10LQF、KB910LQFA1其它系列：IT8510E、PS5130、W83L950D、LPC47N249-AQQ、PCI4510、LPC47 N253-AQQ、LPC47N250-SD、LPC47N252-SG、LPC47N254-AQQ、（1）管理串口、并口、软驱、I/O：PC97338、MB87392、（2）管理键盘、鼠标、且带开机功能：H8/3437、H8。

2010.09瑞萨电子M C U 型号速查手册QzROM 低功耗720、740工具R8C族及工具M16C R32C M16C族工具SuperH族及工具安全MCU 芯片封装说明78K V85078K、V850工具QzROM 13720族、740族开发工具介绍4低功耗6R8C族及其开发工具介绍23M16C族29M16C族R32C34M16C族开发工具介绍36SuperH RISC engine族及其开发工具介绍45安全MCU 78芯片封装说明5078K 65V8507578K、V850微控制器开发工具介绍瑞萨电子MCU 型号速查手册QzROM1QzROM 低功耗720、740工具78K、V850工具R8C族及工具SuperH族及工具M16C族工具安全MCU 78K V850芯片封装说明M16C R32C2QzROMM16C R32CM16C族工具安全MCU78K V850芯片封装说明720、740工具78K、V850工具QzROM低功耗R8C族及工具SuperH族及工具3720族、740族开发工具QzROM 低功耗720、740工具78K、V850工具R8C族及工具SuperH族及工具M16C族工具安全MCU 78K V850芯片封装说明M16C R32CM16C R32CM16C族工具安全MCU78K V850芯片封装说明720、740工具78K、V850工具QzROM低功耗R8C族及工具SuperH族及工具5低功耗QzROM 低功耗720、740工具78K、V850工具R8C族及工具SuperH族及工具M16C族工具安全MCU 78K V850芯片封装说明M16C R32C6R8C族1x系列R 5F 21254S D X X X S P U 010*********瑞萨新MCU代码器件区分ex)F:闪存瑞萨R8C族代码瑞萨R8C群代码ex)R8C/1B, R8C/25存储器变化(仅R8C系列)0:2KB 1:4KB 2:8KB 3:12KB 4:16KB5:24KB 6:32KB 7:48KB 8:64KBA:96KB C:128KB(-):标准版本S :低电压版本A :R8C/3x的新增功能代码2ex) J -40~85℃ 汽车K -40~125℃ 汽车D -40~85℃ 工业N或无标记 -20~85℃ 消费类电子ROM型号(仅用于出厂编程的MCU)FP:LQFP, SP:LSSOP, NP:QFNFA:LQFP, DD:SDIP, LG:FLGAU0:无铅产品，盘装或管装出货W4:无铅产品，卷带出货无标记:含铅产品，盘装或管装出货T4:含铅产品，卷带出货ES:工程样品12345678910R8C族MCU命名规则QzROM 低功耗720、740工具78K、V850工具R8C族及工具SuperH族及工具M16C族工具安全MCU 78K V850芯片封装说明M16C R32C7R8C族1x系列QzROM 低功耗720、740工具78K、V850工具R8C族及工具SuperH族及工具M16C族工具安全MCU 78K V850芯片封装说明M16C R32C8R8C族1x系列注：① R8C/1x芯片的ROM类型均为Flash。