SOT-89-3L三极管封装尺寸

A,Nov,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate Transistors2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltagez Complementary to 2SA1201 APPLICATIONSz Power Amplifier and Voltage AmplifierMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =1mA,I E =0 120 V Collector-emitter breakdown voltageV (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltageV (BR)EBO I E =1mA,I C =0 5 V Collector cut-off currentI CBO V CB =120V,I E =0 0.1 µA Emitter cut-off currentI EBO V EB =5V,I C =0 0.1 µA DC current gainh FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltageV CE(sat) I C =500mA,I B =50mA1 V Base-emitter voltageV BE V CE =5V, I C =0.5A 1 V Transition frequencyf T V CE =5V,I C =100mA 120 MHz Collector output capacitanceC ob V CB =10V, I E =0, f=1MHz 30 pFCLASSIFICATION OF h FERANKO Y RANGE80–160 120–240 MARKINGCO1 CY1Symbol Parameter Value Unit V CBOCollector-Base Voltage 120 V V CEOCollector-Emitter Voltage 120 V V EBOEmitter-Base Voltage 5 V I CCollector Current 800 mA P CCollector Power Dissipation 500 mW R θJAThermal Resistance From Junction To Ambient 250 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

C ,Jun ,2013JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate TransistorsA44 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown VoltageMARKING: A44MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (Ta =25℃ unless otherwise specified)ParameterSymbol T est conditions Min Typ MaxUnit Collector-base breakdown voltageV (BR)CBO I C =100µA,I E =0 400 V Collector-emitter breakdown voltageV (BR)CEO *I C =1mA,I B =0 400 V Emitter-base breakdown voltageV (BR)EBO I E =10µA,I C =0 6 V Collector cut-off currentI CBO V CB =400V,I E =0 0.1 µA Emitter cut-off current I EBOV EB =4V,I C =0 0.1 µA h FE(1)* V CE =10V, I C =1mA 40h FE(2)* V CE =10V, I C =10mA 50200 h FE(3)* V CE =10V, I C =50mA 45DC current gain h FE(4)* V CE =10V, I C =100mA 40 I C =1mA,I B =0.1mA 0.4 VI C =10mA,I B =1mA 0.5 V Collector-emitter saturation voltageV CE(sat)* I C =50mA,I B =5mA 0.75 V Base-emitter saturation voltageV BE(sat)* I C =10mA,I B =1mA 0.75 V Collector output capacitanceC ob V CB =20V, I E =0, f=1MHz 7 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%.I CCollector Current -Continuous 200mA P CCollector Power Dissipation 500 mW R θJAThermal Resistance f rom Junction t o Ambient 250℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ I CMCollector Current -Pulsed 300 mA 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate Transistors2SD1616ATRANSISTOR （NPN ） FEATURES MARKING:1616Az Low collector saturation voltage z High break down voltagez High total power dissipation MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter ValueUnit V CBOCollector-Base Voltage 120 V V CEOCollector-Emitter Voltage 60 V V EBOEmitter-Base Voltage 6 V I CCollector Current -Continuous 1 A P CCollector Power Dissipation 0.5 W R ӨJAThermal Resistance, junction to Ambient 250 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)*pulse test: PW ≤350µs , δ≤2%. CLASSIFICATION of h FE1Rank L K URange 135-270 200-400 300-600 Parameter Symbol Test conditions M in T ypM ax Unit Collector-base breakdown voltageV (BR)CBO I C =10μA , I E =0 120 V Collector-emitter breakdown voltageV (BR)CEO I C =2mA , I B =0 60 V Emitter-base breakdown voltageV (BR)EBO I E =10μA, I C =0 6 V Collector cut-off currentI CBO V CB =60V, I E =0 0.1 μA Emitter cut-off currentI EBO V EB =6V, I C =0 0.1 μA h FE1 V CE =2V, I C =100mA 135 600 DC current gain*h FE2 V CE =2V, I C =1A 81 Collector-emitter saturation voltage *V CE(sat) I C = 1A, I B =50mA 0.3 V Base-emitter saturation voltage *V BE(sat) I C = 1A, I B =50mA 1.2 V Base-emitter voltage *V BE V CE = 2V, I C =50mA 0.6 0.7 V Transition frequencyf T V CE =2V, I C = 100mA 100 MHz Output capacitanceC ob V CB =10 V,I E = 0, f=1MHz 19 pF Turn on timet on 0.07 μs Storage timet S 0.95 μs Fall timet F Vcc=10V, I C =100mA, I B1=-I B2=10mA 0.07 μsSOT-89-3L 1. BASE 2. COLLETOR 3. EMITTER B,Feb,2013【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate TransistorsKTC4379 TRANSISTOR (NPN) FEATURES z Low saturation voltagez High speed switching time z Complementary to KTA1666 MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions M in T yp Max Unit Collector-base breakdown voltageV (BR)CBO I C =1mA, I E =0 50 V Collector-emitter breakdown voltageV (BR)CEO I C =10mA, I B =0 50 V Emitter-base breakdown voltageV (BR)EBO I E =1mA, I C =0 5 V Collector cut-off currentI CBO V CB =50V, I E =0 0.1 μA Emitter cut-off currentI EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =2V, I C =500mA 70 240 DC current gainh FE(2) V CE =2V, I C = 1.5A 40 Collector-emitter saturation voltageV CE(sat) I C =1A, I B =50mA 0.5 V Base-emitter saturation voltageV BE(sat) I C =1A, I B =50mA 1.2 V Transition frequencyf T V CE =2V, I C =500mA 120 MHz Collector output capacitanceC ob V CB =10V, I E =0, f=1MHz 30 pF Turn on Timet on 0.1 Storage Timet stg 1.0 Switching Time Fall Time t f V CC =30V, I C =1A, I B1=-I B2=-0.05A 0.1μsCLASSIFICATION OF h FE(1)Rank OY Range 70-140 120-240 Marking UO UYSOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER A,Jun,2011【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

A,Nov,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate TransistorsKTC4373 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Voltage Application z High Voltagez High Transition FrequencyMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C = 1mA,I E =0 120 V Collector-emitter breakdown voltageV (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltageV (BR)EBO I E =1mA,I C =0 5 V Collector cut-off currentI CBO V CB =120V,I E =0 100 nA Emitter cut-off currentI EBO V EB =5V,I C =0 100 nA DC current gainh FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltageV CE(sat)I C =500mA,I B =50mA 1 V Base-emitter voltageV BE V CE =5V, I C =500mA 1 V Collector output capacitanceC ob V CB =10V,I E =0, f=1MHz 30 pF Transition frequency f T V CE =5V,I C = 500mA 120 MHzCLASSIFICATION OF h FERANKO Y RANGE80–160 120–240 MARKINGCO CYSymbol Parameter Value Unit V CBOCollector-Base Voltage 120 V V CEOCollector-Emitter Voltage 120 V V EBOEmitter-Base Voltage 5 V I CCollector Current 800 mA P CCollector Power Dissipation 500 mW R θJAThermal Resistance From Junction To Ambient 250 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate Transistors2SD2150 TRANSISTOR (NPN)FEATURES z Excellent current-to-gain characteristics zLow collector saturation voltage V CE(sat) V CE(sat)=0.5V(max) for I C /I B =2A/0.1A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions M in Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =50uA, I E =0 40 V Collector-emitter breakdown voltageV (BR)CEO I C =1mA, I B =0 20 V Emitter-base breakdown voltageV (BR)EBO I E =50μA, I C =0 6 V Collector cut-off currentI CBO V CB =30V, I E =0 0.1 μA Emitter cut-off currentI EBO V EB =5V, I C =0 0.1 μA DC current gainh FE * V CE =2V, I C =100mA 180 560 Collector-emitter saturation voltageV CE(sat) * I C =2A, I B =100mA 0.5 V Transition frequencyf T* V CE =2V,I C =500mA f=100MHz 290 MHz Collector output capacitanceC ob V CB =10V, I E =0, f=1MHz 25 pF*Pulse test: t p ≤300μS, δ≤0.02.CLASSIFICATION OF h FERankR S Range180-390 270-560 Marking CFR CFSSOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER B,Nov,2011【南京南山半导体有限公司 — 长电贴片三极管选型资料】200400600800100012000.1110100100010100408012016020002550751001251503000BA S E -E M I T T E R S A T U R A T I O NV O L T AG EV BE sa t(m V)I h ——CO L L C E T O R C U R R E N T I C(m A )500T RAN SI T I ONFR EQ UEN C YfT(M H z )COLLECTOR CURRENT I C (mA) 2SD2150Static Characteristic C O L L E C T O R C U R R E N T I C(m A )Typical Characteristics AMBIENT TEMPERATURE T a ()℃ B,Nov,2011【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTDSOT-89-3L Plastic-Encapsulate Transistors PXT3904 TRANSISTOR (NPN) FEATURES z Compliment to PXT3906 z Low current z Low voltage MARKING: 1AELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions M in T yp M ax U nit Collector-base breakdown voltageV (BR)CBO I C =10μA,I E =0 60 V Collector-emitter breakdown voltageV (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltageV (BR)EBOI E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =30V,I E =0 0.05 μAEmitter cut-off current I EBO V EB =6V,I C =0 0.05 μA h FE(1) V CE =1V,I C =0.1mA 60 h FE(2)V CE =1V,I C =1mA 80 h FE(3)V CE =1V,I C =10mA 100 300 h FE(4)V CE =1V,I C =50mA 60 DC current gain h FE(5)V CE =1V,I C =100mA 30 V CE(sat)1I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltageV CE(sat)2I C =50mA,I B =5mA 0.3 V V BE(sat)1I C =10mA,I B =1mA 0.65 0.85 V Base-emitter saturation voltageV BE(sat)2I C =50mA,I B =5mA 0.95 V Transition frequencyf T V CE =20V,I C =10mA,f =100MHz 300 MHz Collector capacitanceC c V CB =5V,I E =0,f =1MHz 4 pF Emitter capacitanceC e V EB =0.5V,I C =0,f =1MHz 8 pF Noise figureNF V CE =5V,I c =0.1mA,f=10Hz-15.7kHz, R S =1K Ω 5 dB Delay timet d 35 n s Rise timet r 35 n s Storage timet S 200 n sFall time t f I C =10mA , I B1=-I B2= 1mA 50 n sSOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 A,May,2011Collector ut-off current I CEX V CE =30V,V BE(off)=3V 0.05 μA【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

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A,Nov,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate Transistors2SC4548 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Breakdown Voltage z Excellent h FE LinearityMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =10µA,I E =0 400 V Collector-emitter breakdown voltageV (BR)CEO I C =1mA,I B =0 400 V Emitter-base breakdown voltageV (BR)EBO I E =10µA,I C =0 5 V Collector cut-off currentI CBO V CB =300V,I E =0 0.1 µA Emitter cut-off currentI EBO V EB =4V,I C =0 0.1 µA DC current gainh FE V CE =10V, I C =50mA 60 200 Collector-emitter saturation voltageV CE(sat) I C =50mA,I B =5mA0.6 V Base-emitter saturation voltageV BE(sat) I C =50mA,I B =5mA 1 V Transition frequencyf T V CE =30V,I C =10mA 70 MHz Collector output capacitanceC ob V CB =30V, I E =0, f=1MHz 4 pFCLASSIFICATION OF h FERANK D E RANGE 60–120 100–200MARKING CNSymbol Parameter Value Unit V CBOCollector-Base Voltage 400 V V CEOCollector-Emitter Voltage 400 V V EBOEmitter-Base Voltage 5 V I CCollector Current 200 mA P CCollector Power Dissipation 500 mW R θJAThermal Resistance From Junction To Ambient 250 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。

A,Nov,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89-3L Plastic-Encapsulate Transistors2SD1005 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Breakdown Voltage z Excellent DC Current Gain LinearityMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =0.1mA,I E =0 100 V Collector-emitter breakdown voltageV (BR)CEO I C =1mA,I B =0 80 V Emitter-base breakdown voltageV (BR)EBO I E =0.1mA,I C =0 5 V Collector cut-off currentI CBO V CB =100V,I E =0 0.1 µA Emitter cut-off currentI EBO V EB =5V,I C =0 0.1 µA h FE(1)* V CE =2V, I C =100mA 90 400 DC current gainh FE(2)* V CE =2V, I C =500mA 25 Collector-emitter saturation voltageV CE(sat)* IC =500mA,I B =50mA 0.5 V Base-emitter saturation voltageV BE(sat)* I C =500mA,I B =50mA 1.5 V Base-emitter voltageV BE * V CE =10V, I C =10mA 0.6 0.7 V Transition frequencyf T V CE =5V,I C =10mA 160 MHz Collector output capacitanceC ob V CB =10V, I E =0, f=1MHz 12 pF*Pulse test CLASSIFICATION OF h FE (1)RANK W V U RANGE 90–180 135–270 200–400MARKING BW BV BUSymbol Parameter Value Unit V CBOCollector-Base Voltage 100 V V CEOCollector-Emitter Voltage 80 V V EBOEmitter-Base Voltage 5 V I CCollector Current 1 A P CCollector Power Dissipation 500 mW R θJAThermal Resistance From Junction To Ambient 250 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【Label on the Inner Box Label on the Outer BoxQA LabelSeal the boxwith the tapeSeal the boxwith the tapeStamp “EMPTY”on the empty boxInner Box: 210 mm× 208mm×２０３　m m Outer Box: 440 mm× 440mm× 230mmThe top gasket1000×1 PCSLabel on the ReelThe bottom gasketThe file folderPlastic bag。