FGL40N120AN_IcpdfCom_691897
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FGL40N120AND
1200 ±25 64 40 120 40 240 500 200 10 -55 to +150 -55 to +150 300
Units
V V A A A A A W W s C C C
Thermal Characteristics
Symbol
R R
JC(IGBT) JA
Parameter
Load Current [A]
50 40 30 20 10 Duty cycle : 50% TC = 100 C Power Dissipation = 100W 0.1 1 10 100 1000
3 40A
2
IC = 20A
1 25 50 75 100 125
0
Case Temperature, TC [ C]
FGL40N120AN 1200V NPT IGBT
FGL40N120AN
1200V NPT IGBT
Features
• High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance
5 Common Emitter VGE = 15V
Figure 4. Load Current vs. Frequency
80 70 60
VCC = 600V Load Current : peak of square wave
Collector-Emitter Voltage, VCE [V]
4 80A
-0.6 ---
--1 ±250
V V/ C mA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, TC = 125 C IC = 64A, VGE = 15V Dynamic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---3200 370 125 ---pF pF pF 3.5 ---5.5 2.6 2.9 3.15 7.5 3.2 --V V V V
(Continued)
Figure 8. Turn-On Characteristics vs. Gate Resistance
100
Capacitance [pF]
4000
Switching Time [ns]
tr
3000
2000 Coss 1000 Crss
td(on)
Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
0 1 10
10 0 10 20 30 40 50 60 70
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [ ]
Figure 9. Turn-Off Characteristics vs. Gate Resistance
Common Emitter VCC = 600V, VGE = 15V, IC = 40A TC = 25 C TC = 125 C td(off)
3 FGL40N120AN Rev. A
FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
6000 Common Emitter VGE = 0V, f = 1MHz 5000 Ciss TC = 25 C
150 Common Emitter VGE = 15V 120 TC = 25 C TC = 125 C 90
TC = 25 C
250
20V 17V 15V
Collector Current, IC [A]
200
12V
150
Collector Current, IC [A]
10
60
100
VGE = 10V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate charge Gate-Emitter Charge Gate-Collector Charge VCE = 600V, IC = 40A, VGE = 15V VCC = 600V, IC = 40A, RG = 5 , VGE = 15V, Inductive Load, TC = 125 C VCC = 600V, IC = 40A, RG = 5 , VGE = 15V, Inductive Load, TC = 25 C -----------------15 20 110 40 2.3 1.1 3.4 20 25 120 45 2.5 1.8 4.3 25 130 220 ---80 3.45 1.65 5.1 -------38 195 330 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGL40N120AN Rev. A
FGL40N120AN 1200V NPT IGBT
Package Marking and Ordering Information
Device Marking
FGL40N120AN
Device
FGL40N120AN
Package
TO-264
Reel Size
-
50
30
0 0 2 4 6 8
0 0 2 4 6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Frequency [kHz]
Figure 5. Saturation Voltage vs. VGE
20 Common Emitter TC = 25 C
Figure 6. Saturation Voltage vs. VGE
20 Common Emitter TC = 125 C
Collector-Emitter Voltage, VCE [V]
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G
TO-264
G C E
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM(1) IF IFM PD SCWT TJ TSTG TL
Notes: (1) Pulse width limited by max. junction temperature
Parameter
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125 C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds @TC = 25 C @TC = 100 C @TC = 100 C @TC = 25 C @TC = 100 C
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V