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leixingchangjiaVceo(V)h3l1h3l2h1l3h1l4h1l5h1l62SA1005日电-40Ic(mA)-30hfe40901802SA1022松下-20Ic(mA)-30Iceo(μA)001002SA1057日电-12Ic(mA)-50hfe20902002SA1161东芝-8Ic(mA)-30hfe20002SA1177三洋-20Ic(mA)-30hfe6003202SA1223日电-12Ic(mA)-50hfe20902002SA1224日电-25Ic(mA)-250hfe20752002SA1226日电-40Ic(mA)-30Icbo(μA)00-0.12SA1229日电-12Ic(mA)-50hfe20902002SA1245东芝-8Ic(mA)-30hfe20002SA1254松下-20Ic(mA)-30Iceo(μA)001002SA1256三洋-20Ic(mA)-30hfe6002702SA1323松下-20Ic(mA)-30Iceo(μA)001002SA1337日立-50Ic(mA)-100Icbo(μA)00-0.52SA1350日立-30Ic(mA)-100Icbo(μA)00-0.52SA1424日电-12Ic(mA)-50Iebo(μA)00-0.12SA1487松下-85Ic(mA)-50Iceo(μA)00-102SA1532松下-20Ic(mA)-30Iceo(μA)001002SA1669三洋-15Ic(mA)-50Icbo(μA)00-0.12SA1688三洋-20Ic(mA)-30Icbo(μA)00-0.12SA1724三洋-20Ic(mA)-300Icbo(μA)00-0.12SA1733K罗姆-20Ic(mA)-30Icbo(uA)00-0.52SA1778三洋-15Ic(mA)-50Iebo(μA)00-0.12SA1790松下-20Ic(mA)-30Icbo(μA)00-0.12SA1808罗姆-20Ic(mA)-30Icbo(uA)00-0.52SA1810日立-200Ic(mA)-200Icbo(μA)00-102SA1815三洋-12Ic(mA)-50hfe6002702SA1821罗姆-20Ic(mA)-30Icbo(uA)00-0.52SA1857三洋-12Ic(mA)-50hfe6002702SA1885罗姆-10Ic(mA)-100Icbo(μA)00-0.12SA781(K)日立-15Ic(mA)-200Icbo(μA)00-0.22SA800日电-12Ic(mA)-30hfe20602002SA838松下-20Ic(mA)-30Iceo(μA)001002SC1009A日电30Ic(mA)50Icbo(μA)000.12SC1044日电25Ic(mA)30Iebo(nA)00502SC1047松下20Ic(mA)20hfe4002602SC1215松下20Ic(mA)50hfe25002SC1254日电25Ic(mA)30Iebo(μA)000.12SC1260日电25Ic(mA)30Iebo(μA)000.12SC1275日电14Ic(mA)50hfe25802002SC1324三菱25Ic(mA)150Icbo(μA)00502SC1342日立20Ic(mA)30hfe3502002SC1359松下20Ic(mA)30Icbo(μA)000.12SC1360松下45Ic(mA)50Icbo(μA)001002SC1360A松下60Ic(mA)50Icbo(μA)001002SC1365日电25Ic(mA)300Iebo(μA)000.52SC138日电30Ic(mA)500hfe120501502SC138A日电60Pc(mW)800Icbo(μA)0012SC139日电30Ic(mA)500Icbo(μA)000.152SC1424日电14Ic(mA)50hfe25802002SC1426日电18Ic(mA)150Iebo(μA)000.52SC1600日电20Ic(mA)250Icbo(μA)001002SC1658日电6Ic(mA)30Iebo(μA)000.12SC1662日电8Ic(mA)80Iebo(μA)000.12SC1674日电20Ic(mA)20hfe40901802SC1675日电30Ic(mA)30hfe40901802SC1687松下25Ic(mA)30Iebo(μA)00102SC1688松下40Ic(mA)30Iebo(μA)00102SC1729三菱17Ic(A)3Icbo(mA)0012SC1731日电12Ic(mA)50Iebo(μA)000.12SC1733日电14Ic(mA)50Iebo(nA)00502SC1791松下-50Ic(mA)-50Icbo(μA)00-0.12SC1809罗姆20Ic(mA)20Icbo(μA)000.52SC1809S罗姆20Ic(mA)20Icbo(uA)000.52SC1855日立20Ic(mA)20hfe2002002SC1856日立20Ic(mA)20hfe2002002SC1886罗姆-10Ic(mA)-100Icbo(μA)00-0.12SC1906日立19Ic(mA)50hfe40002SC1907日立19Ic(mA)50hfe40002SC1923东芝30Ic(mA)20hfe4002002SC1924日电12Ic(mA)50Iebo(μA)000.12SC1925日电12Ic(mA)50Iebo(μA)000.12SC1926日电14Ic(mA)50Iebo(nA)00502SC1927日电14Ic(mA)50Iebo(nA)00502SC1945三菱40Ic(A)6Icbo(μA)001002SC1946三菱17Ic(A)7Icbo(mA)0022SC1946A三菱17Ic(A)7Icbo(mA)0022SC1947三菱17Ic(A)1Icbo(μA)005002SC1965三菱17Ic(A)1Icbo(μA)005002SC1965A三菱17Ic(A)2Icbo(μA)005002SC1966三菱17Ic(A)1Icbo(μA)001002SC1967三菱17Ic(A)2Icbo(μA)002002SC1968三菱17Ic(A)5Icbo(μA)005002SC1968A三菱17Ic(A)5Icbo(μA)005002SC1969三菱25Ic(A)6Icbo(μA)001002SC1970三菱17Ic(A)0Icbo(μA)001002SC1971三菱17Ic(A)12Icbo(μA)005002SC1972三菱17Ic(A)3Icbo(μA)0010002SC2026日电14Ic(mA)50hfe251002002SC2053三菱17Ic(A)0Icbo(μA)00202SC2055三菱9Ic(A)0Icbo(μA)00302SC2056三菱9Ic(A)0Icbo(μA)001002SC2058罗姆25Ic(mA)50Icbo(μA)000.52SC2058S罗姆25Ic(mA)50Icbo(μA)000.52SC2059K罗姆20Ic(mA)20Icbo(μA)000.52SC2063罗姆25Ic(mA)50Icbo(μA)000.52SC2063M罗姆25Ic(mA)50Icbo(μA)000.52SC2078三洋80Ic(A)3Icbo(μA)00102SC2086三菱35Ic(A)1Icbo(μA)001002SC2094三菱17Ic(A)3Icbo(mA)0022SC2097三菱20Ic(A)15Icbo(mA)0052SC2099东芝18Ic(A)6hfe2001852SC2131三菱18Ic(A)0Icbo(μA)001002SC2133三菱35Ic(A)5Icbo(mA)0022SC2134三菱35Ic(A)10Icbo(mA)0052SC2148日电14Ic(mA)50hfe30802002SC2149日电12Ic(mA)70hfe30702002SC2150日电11Ic(mA)30hfe301002002SC2166三菱75Ic(A)4Icbo(μA)001002SC2188松下35Ic(mA)50Iceo(μA)00102SC2206松下20Ic(mA)30hfe501002202SC2216东芝45Ic(mA)50Icbo(μA)000.12SC2221日电12Pt(W)*7Icbo(mA)000.52SC2237三菱17Ic(A)2Icbo(μA)005002SC2290东芝18Ic(A)20hfe1001502SC2295松下20Ic(mA)30Icbo(μA)000.12SC2314三洋45Ic(A)1Icbo(μA)0012SC2329日电18Pt(W)*7Icbo(mA)000.32SC2340日电20Ic(mA)300Icbo(μA)0052SC2347东芝15Ic(mA)50Icbo(μA)000.12SC2348东芝30Ic(mA)20hfe2002002SC2349东芝15Ic(mA)50Icbo(μA)000.12SC2351日电12Ic(mA)70hfe4002002SC2352日电20Ic(mA)30hfe401001802SC2360(H)松下20Ic(mA)20hfe4002002SC2367日电10Ic(mA)80hfe5003002SC2377松下20Ic(mA)15Iceo(μA)00102SC2395东芝18Ic(A)5hfe20002SC2404松下20Ic(mA)15hfe4002602SC2407日电18Ic(mA)150Icbo(μA)000.52SC2410罗姆32Ic(mA)100Icbo(μA)000.52SC2410S罗姆32Ic(mA)100Icbo(μA)000.52SC2413K罗姆25Ic(mA)50Icbo(μA)000.52SC2464日立25Ic(mA)20hfe30002SC2465日立20Ic(mA)20hfe2002002SC2466日立20Ic(mA)50hfe3002002SC2467日立20Ic(mA)50hfe30002SC2468日立20Ic(mA)50hfe40002SC2469日立20Ic(mA)50hfe40002SC2471日立30Ic(mA)50hfe20002SC2480松下20Ic(mA)50hfe2502502SC2498东芝20Ic(mA)50hfe30803002SC2499东芝20Ic(mA)30hfe30002SC2510东芝35Ic(A)20hfe10002SC2512日立20Ic(mA)50hfe30002SC2538三菱17Ic(A)0Icbo(μA)001002SC2539三菱17Ic(A)4Icbo(μA)0010002SC2540三菱17Ic(A)10Icbo(mA)002.52SC2558-KA日电18Pt(W)*8Icbo(mA)000.12SC2559-KA日电18Pt(W)*17Icbo(mA)000.22SC2570A日电12Ic(mA)70Icbo(μA)0012SC2585日电12Ic(mA)65Iebo(μA)0012SC2586日电18Ic(A)0Iebo(mA)000.12SC2609三菱35Ic(A)15Icbo(mA)00102SC2619日立30Ic(mA)100hfe3502002SC2620日立20Ic(mA)20hfe4002002SC2627三菱17Ic(A)2Icbo(mA)0012SC2628三菱17Ic(A)4Icbo(mA)0022SC2629三菱17Ic(A)8Icbo(mA)0032SC2630三菱17Ic(A)14Icbo(mA)0052SC2636松下20Ic(mA)50hfe25002SC2638东芝17Ic(A)2Icbo(mA)000.12SC2639东芝17Ic(A)3Icbo(mA)0012SC2640东芝17Ic(A)6Icbo(mA)0022SC2641东芝17Ic(A)1Icbo(mA)0012SC2642东芝17Ic(A)2Icbo(mA)001.52SC2643东芝17Ic(A)6Icbo(mA)0032SC2644东芝12Ic(mA)120hfe205002SC2647松下20Ic(mA)30hfe7002502SC2652东芝55Ic(A)20hfe1001502SC2668东芝30Ic(mA)20hfe4002002SC2669东芝30Ic(mA)50Icbo(μA)000.12SC2670东芝30Ic(mA)100Icbo(μA)000.12SC2671(F)松下15Ic(mA)80hfe501503002SC2671(H)松下12Ic(mA)70hfe400200

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沟绝缘栅双极晶体管数据手册说明书

沟绝缘栅双极晶体管数据手册说明书

R

版本：201709A 1/6 N沟绝缘栅双极晶体管 N-CHANNEL IGBT JT015N065FED 订 货 型 号 Order codes 印 记 Marking 封 装 Package 无 卤 素 Halogen Free 包 装 Packaging 器件重量 Device Weight JT015N065FED-O-F-N-B JT015N065FED TO-220MF 否 NO 条管 Tube 2.20 g(typ) 封装 Package 主要参数 MAIN CHARACTERISTICS IC 15 A VCES 650V Vcesat-typ（@Vge=15V） 1.6V 用途  逆变器  UPS电源 APPLICATIONS  General purpose inverters  UPS 产品特性  低栅极电荷  Trench FS 技术,  通态压降, VCE(sat), typ = 1.6V @ IC =15A and TC = 25°C  RoHS产品 FEATURES  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ = 1.6V @ IC = 15A and TC = 25°C  RoHS product R JT015N065FED

版本：201709A 2/6 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *连续集电极电流由最高结温限制 *Collector current limited by maximum junction temperature 项 目 Parameter 符 号 Symbol 数 值Value 单 位 Unit JT015N065FED 最高集电极－发射极直流电压 Collector-Emmiter Voltage Vces650 V *连续集电极电流 Collector Current-continuous IC 30 (T=25℃) A 15( T=100℃) A 最大脉冲集电极极电流（注1） Collector Current – pulse （note 1） ICM45 A 最高栅极发射极电压 Gate-Emmiter Voltage VGES±20 V Turn-off safe area - 60 A 耗散功率 Power Dissipation PD TC=25℃ 31 W 最高结温及存储温度 Operating and Storage Temperature Range TJ，TSTG-55～+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL300 ℃ R JT015N065FED

ULN2003L达林顿晶体管阵列数据手册

ULN2003L达林顿晶体管阵列数据手册

ULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁1HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION 󰀁󰀁TheULN2003isamonolithichighvoltageandhighcurrentDarlingtontransistorarrays.ItconsistsofsevenNPNdarlingtonpairsthatfeatureshigh-voltageoutputswithcommon-cathodeclampdiodeforswitchinginductiveloads.Thecollector-currentratingofasingledarlingtonpairis500mA.Thedarlingtonpairsmaybeparrlleledforhighercurrentcapability.Applicationsincluderelaydrivers,hammerdrivers,lampdrivers,displaydrivers(LEDgasdischarge),linedrivers,andlogicbuffers.TheULN2003hasa2.7kΩseriesbaseresistorforeachdarlingtonpairforoperationdirectlywithTTLor5VCMOSdevices. FEATURES *500mAratedcollectorcurrent(Singleoutput)*High-voltageoutputs:50V*Inputscompatibalewithvarioustypesoflogic.*Relaydriverapplication󰀁󰀁󰀁DIP-16󰀁 LOGIC DIAGRAM SCHEMATIC(EACH DARLINGTON PAIR) 123456781615141312111091B2B3B4B5B6B7BE1C2C3C4C5C6C7CCOM INPUTBOUPUTCCOME7.2kΩ3kΩ2.7kΩ ULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁2ABSOLUTE MAXIMUM RATINGS(Ta=25°C)Characteristic Symbol Value Unit Colletor-EmitterVoltageVCE50VInputVoltageVI30APeakCollectorCurrentIo500mATotalEmitter-terminalIOK500mAPowerDissipationPd950Tamb=25°C495Tamb<85°CmWmWOperatingTemperatureTopr-20~+85°CStorageTemperatureTstg-65~+150°CNote:Allvolatgevaluesarewithrepecttotheemitter/substrateterminalE,unlessotherwisenoted. ELECTRICAL CHARACTERISTICS(Ta=25°C,unlessotherwisespecified)Characteristic Test Figure Symbol Test Conditions Min Typ Max Units VCE=2V,Ic=200mA2.4VCE=2V,Ic=250mA2.7On-stateInputVoltage6VI(ON)VCE=2V,Ic=300mA3VII=250µA,Ic=100mA0.91.1II=350µA,Ic=200mA11.3Collector-EmitterSaturationVoltage5VCE(SAT)II=500µA,Ic=350mA1.21.6V1VCE=50V,II=050CollectorCutoffCurrent2ICEXVCE=50V,II=0,Ta=70°C100µAClampForwardVoltage8VFIF=350mA1.72VOff-stateInputCurrent3II(OFF)VCE=50V,IC=500mA,Ta=70°C5065µAInputCurrent4IIVI=3.85V0.951.35mAVR=50V50ClampReverseCurrent7IRVR=50V,Ta=70°C100µAInputCapacitance--CIVI=0,f=1MHz1525pFPropagationdelaytime,low-to-high-leveloutput9tPLH0.251µsPropagationdelaytime,high-to-low-leveloutput9tPHL0.251µsHigh-leveloutputVoltageafterswitching10VOHVs=50V,Io=300mAVs-20mV ULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁3TEST CIRCUITS ICEXVCEOpenOpenICEXVCEOpenVIFigure1ICEXTestCircuitFigure2ICEXTestCircuitICVCEOpenII(off)OpenII(on)OpenVIFigure3II(off)TestCircuitFigure4II(on)TestCircuitVCEOpenICIIIcHFE=IIVCEOpenICIIIcHFE=VI(on)Note:IIisfixedformeasuringVCE(sat),variableformeasuringHFE.Figure5HFE,VCE(sat)TestCircuitFigure6VI(on)TestCircuit ULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁4 VROpenIRIFOpenVFFigure7IRTestCircuitFigure8VFTestCircuittPHLtPLH50%50%50%50%INPUTOUTPUTFigure9.PropagationDelayTimeWaveformsPulseGenerator(NoteA)Vs2mH200Ω1N3064CL=15pFInputOutput(NoteB)1.5V1.5V90%10%90%10%<10nsInputOutputVIH=3V0VVOHVOLNote:A.ThePulsegeneratoehasthefollowingcharacteristics:PRR=12.5kHz,Zo=50Ωtch-upTestCircuitandVoltageWaveformsULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁5TYPICAL PERFORMANCE CHARACTERISTICS 010020030040050000.51.01.52.02.5Collector-EmittersaturationVoltagevs.CollectorCurrentII=250µAII=350µAII=500µACollectorCurrent,Ic(mA)Collector-EmittersaturationVoltage,VCE(sat)(V)Ta=25k00.51.01.52.02.5Collector-EmittersaturationVoltage,VCE(sat)(V)02004006008001000TotalCollectorCurrent,Ic(tot)(mA)Collector-EmittersaturationVoltagevs.TotalCollectorCurrent(twodarlingtonparalleled)Ta=25kII=250µAII=250µAII=500µA050100150200250InputCurrent,Ii(µA)0100200300400500CollectorCurrentVs.InputCurrentTa=25kRL=10ΩVs=10VVs=8VCollectorCurrent,Ic(mA)020406080100DutyCycle,(%)0100200300400500MaximumCollectorCurrent,Ic(mA)MaximumCollectorCurrentVs.DutycycleN=1N=2N=5N=7N=NumberofOutputsConductiongSimultaneouslyTa=70k ULN2003LINEARINTEGRATEDCIRCUITYOUWANGELECTRONICSCO.LTD󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁6TYPICAL APPLICATION CIRCUIT 12345678161514131211109VVccTTLOutputLamptest TTL to Load 12345678161514131211109VVccTTLOutputRp Use of pullup Resistor to increase drive Current This datasheet has been downloaded from:Datasheets for electronic components.

XJ4810晶体管特性图示仪 说明书

XJ4810晶体管特性图示仪 说明书

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XJ4810晶体管特性图示仪说明书

晶体管测量仪器是以通用电子测量仪器为技术基础，以半导体器件为测量对象的电子仪器。用它可以测试晶体三极管（NPN型和PNP型）的共发射极、共基极电路的输入特性、输出特性；测试各种反向饱和电流和击穿电压，还可以测量场效管、稳压管、二极管、单结晶体管、可控硅等器件的各种参数。下面以XJ4810型晶体特性图示仪为例介绍晶体管图示仪的使用方法。

图A-23 XJ4810型半导体管特性图示仪

7.1 XJ4810型晶体管特性图示仪面板功能介绍

XJ4810型晶体管特性图示仪面板如图A-23所示：

1. 集电极电源极性按钮，极性可按面板指示选择。

2. 集电极峰值电压保险丝：1.5A。

3. 峰值电压%：峰值电压可在0～10V、0～50V、0～100V、0～500V之连续可调，面板上的标称值是近似值，参考用。

4. 功耗限制电阻：它是串联在被测管的集电极电路中，限制超过功耗，亦可作为被测半导体管集电极的负载电阻。

5. 峰值电压范围：分0～10V/5A、0～50V/1A、0～100V/0.5A、0～500V/0.1A四挡。当由低挡改换高挡观察半导体管的特性时，须先将峰值电压调到零值，换挡后再按需要的电压逐渐增加，否则容易击穿被测晶体管。

AC挡的设置专为二极管或其他元件的测试提供双向扫描，以便能同时显示器件正反向的特性曲线。

6. 电容平衡：由于集电极电流输出端对地存在各种杂散电容，都将形成电容性电流，因而在电流取样电阻上产生电压降，造成测量误差。为了尽量减小电容性电流，测试前应调节电容平衡，使容性电流减至最小。

7. 辅助电容平衡：是针对集电极变压器次级绕组对地电容的不对称，而再次进行电容平衡调节。

8. 电源开关及辉度调节：旋钮拉出，接通仪器电源，旋转旋钮可以改变示波管光点亮度。

9. 电源指示：接通电源时灯亮。

10. 聚焦旋钮：调节旋钮可使光迹最清晰。

维沙伊·西利康晶体管数据手册说明书

维沙伊·西利康晶体管数据手册说明书

Vishay Siliconix

S17-0273-Rev. C, 20-Feb-171Document Number: 62634For technical questions, contact: **************************THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000Dual N-Channel 100 V (D-S) MOSFETFEATURES•TrenchFET® power MOSFET•100 % Rg and UIS tested•Material categorization:for definitions of compliance please see /doc?99912APPLICATIONS•Primary side switching•Synchronous rectification•DC/AC invertersNotesa.Based on TC = 25 °Cb.Surface mounted on 1" x 1" FR4 boardc.t = 10 sd.See solder profile (/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteedand is not required to ensure adequate bottom side solder interconnectione.Rework conditions: Manual soldering with a soldering iron is not recommended for leadless componentsf.Maximum under steady state conditions is 85 °C/WPRODUCT SUMMARYVDS (V)100RDS(on) max. () at VGS = 10 V0.018RDS(on) max. () at VGS = 7.5 V0.019RDS(on) max. () at VGS = 6 V0.021Qg typ. (nC)12.2ID (A)36.7ConfigurationDualPowerPAK® SO-8 DualTop View16.15 mm5.15 mmBottom ViewG241S12G13S2D18D26D17D25N-Channel MOSFETG1D1S1N-Channel MOSFETG2D2S2ORDERING INFORMATIONPackagePowerPAK SO-8Lead (Pb)-free and halogen-freeSi7252DP-T1-GE3ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)Parameter Symbol Limit Unit Drain-source voltage VDS100VGate-source voltage VGS± 20Continuous drain current (TJ = 150 °C)TC = 25 °CID36.7ATC = 85 °C29.2TA = 25 °C10.1 b, cTA = 85 °C8 b, cPulsed drain current (t = 300 μs)IDM80Continuous source-drain diode current TC = 25 °CIS38TA = 25 °C2.9 b, cSingle pulse avalanche currentL = 0.1 mHIAS20Single pulse avalanche energyEAS20mJMaximum power dissipationTC = 25 °CPD46WTC = 85 °C29TA = 25 °C3.5 b, cTA = 85 °C2.2 b, cOperating junction and storage temperature rangeTJ, Tstg -55 to +150°CSoldering recommendations (peak temperature) d, e 260THERMAL RESISTANCE RATINGSParameter Symbol TypicalMaximumUnit Maximum junction-to-ambient b, ft  10 sRthJA2635°C/WMaximum junction-to-case (drain)Steady Vishay Siliconix