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AO3400

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D
SOT-23-3L
G S
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Gate Resistance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.6A, VGS = 0V 1.6 1.2 A V Qg VDS = 15V, ID = 5.8A Qgs VGS = 4.5V Qgd td(on) VDD = 15V, RL=2.7Ω tr ID = 1A, VGEN = 10V td(off) RG = 3Ω tf Ciss VDS = 10V, VGS = 0V Coss f = 1.0 MHz Crss 33 115 pF 3 340 10 38 50 15 20 ns 2.8 7 11 1.6 nC 11 14 BVDSS RDS(on) RDS(on) RDS(on) VGS(th) IDSS IGSS gfs Rg VGS = 0V, ID = 250uA VGS = 10V, ID = 5.8A VGS = 4.5V, ID =5A VGS = 2.5V, ID =4A VDS =VGS, ID = 250uA VDS = 24V, VGS = 0V VGS = ± 12V, VDS = 0V VDS = 5V, ID = 5A F=1.0MHz 10 6 15 7 7.5 0.7 30 22.0 27.0 43.0 28.0 33.0 52.0 1.4 1 ±100 V uA nA S Ω mΩ V
o
Symbol VDS VGS ID IDM PD
Limit 30
Unit V
± 12 5.8 A 30 1.4 W 1 -55 to 150 145
o o
C
C/W
ARACTERISTICS (TA = 25oC unless otherwise noted)
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25oC Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C TJ, Tstg RθJA
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
-2-
AO3400
Characteristics Curve
-3-
AO3400
30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

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AO3400A SOT-23-3L NMOS Vds30V 规格书AO推荐

AO3400A SOT-23-3L NMOS Vds30V 规格书AO推荐


10µs 100µs 1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Power (W)
1000 100
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G S
Maximum 30 ±12 5.7 4.7 30 1.4 0.9
-55 to 150
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
AO3400A
30V N-Channel MOSFET
General Description
Product Summary
The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
AO3400 规格书 AOS

AO3400 规格书 AOS


VGS=10V
1.8
VGS=4.5V Id=5A 1.6
1.4
17
VGS=105V
1.2
Id=5.8A2
10
1
10
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8 0
25 50 75 100 125 150 175
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient Thermal Resistance
ID(A)
15
VDS=5V 12
9
6
125°C 3
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
RDS(ON) (mΩ)
30
25 VGS=4.5V
20
15
AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications.
场效应管参数

场效应管参数


80W 0
产 JCS13007/SIF13007/JD
13007
12A 24
12
HM13009 NPN 400V 700V 9V
6A
A
A
120W
TO-22 量
0
产
MJE13009/KSE13009/ 3DD13009/CS13009/ JCS13009/SIF13009/JD 13009
产品应用： 1.节能灯照明/电子镇流器 2.LED 电源 3.电源（开关电源、UPS 电源、通信电源等） 4.充电器 5.适配器 6.电源板
高压 MOSFET 场效应管
型号 HM1N60 HM2N60
HM4N60
HM5N60 HM7N60 HM8N60 HM10N60 HM12N60 HM5N50
沟道 N 沟道 N 沟道
N 沟道
N 沟道 N 沟道 N 沟道 N 沟道 N 沟道
VDS (Max) 600V 600V
600V
600V 600V 600V 600V 600V
HM630
N 沟道 200V 30V 4V
9A
36A 0.4Ω
TO-220 TO-220
量产 量产
IRF740 IRF630
HM640
N 沟道 200V 30V 4V 18A 72A 0.18Ω
TO-220
量产
产品应用：
IRF64
1.LED 电源 2.电源（开关电源、UPS 电源、通信电等） 3.充电器 4.适配器 5.电源板 6.小家电、家电电源板 7.电动车控制板 8.电动工具 9.电脑主板、显卡
HM3205
N 沟道 55V 20V 3V
HM50N06K N 沟道 60V 20V 1.5V
AO3400A 规格书 AOS

AO3400A 规格书 AOS


ID(A)
15
VDS=5V 12
9
6
125°C 3
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
RDS(ON) (mΩ)
30
25 VGS=4.5V
20
15
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
630
pF
75
pF
50
pF
1.5
3
4.5
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with