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KC75118资料

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KC75118C 1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERA

1INTRODUCTION

The KC75118C is an interline transfer CCD area image

sensor developed for NTSC 1/5 inch optical format PC

cameras, object detector and image pattern recognizer. High

sensitivity is achieved through the adoption of Ye, Cy, Mg and

G complementary color mosaic filter, on-chip micro lenses.

This chip features a field integration read out system and an

electronic shutter with variable charge storage time.

FEATURES

•Optical Size 1/5 inch Format

•Ye, Cy, Mg, G On-chip Complementary

Color Mosaic Filter

•Variable Speed Electronic Shutter

(1/60, 1/100 ~ 1/10, 000sec)

•Horizontal Register 3.3V ~ 5V Drive

•14pin Ceramic DIP Package

•No Adjust Substrate Bias

•Field Integration Read Out System

•No DC Bias on Reset Gate

STRUCTURE

•Number of Total Pixels:381(H) × 506(V)

•Number of Effective Pixels:362(H) × 492(V)

•Chip Size:3.75mm(H) × 3.30mm(V)

•Unit Pixel Size:8.10µm(H) × 4.45µm(V)

•Optical Blacks & Dummies:Refer to Figure Below

Vertical 1 Line (Even Field Only)14Pin Cer DIP

ORDERING INFORMATIONDevicePackageOperating

KC75118C14Pin Cer DIP-10 °C ~ +60 °C14236217

2

492

12V-CCD

OUTPUTDummyPixels

OpticalBlackPixels

EffectivePixelsEffective

Imaging

Area

H-CCD元器件交易网www.cecb2b.com1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERAKC75118C

2BLOCK DIAGRAM

PIN DESCRIPTIONFigure 1. Block Diagram

Table 1. Pin DescriptionPinSymbolDescriptionPinSymbolDescription

1ΦV4Vertical register transfer clock 48VDDOutput stage drain bias

2ΦV3Vertical register transfer clock 39GNDGround

3ΦV2Vertical register transfer clock 210ΦSUBSubstrate clock

4ΦV1Vertical register transfer clock 111VLProtection circuit bias

5NCNo connection12ΦRGReset gate clock

6GNDGround13ΦH1Horizontal CCD transfer clock 1

7VOUTSignal output14 ΦH2Horizontal CCD transfer clock 2

7VOUT654321

891011121314GNDNCΦV1ΦV2ΦV3ΦV4

VDDVLGNDΦH1ΦH2ΦRGΦSUBVertical Shift Register CCDVertical Shift Register CCDVertical Shift Register CCDVertical Shift Register CCD

Horizontal Shift Register CCD CyYe

Mg

Mg

MgMgMg

Ye

Ye

YeYeYeYe

YeG

G

GG

Cy

CyCyCyCy

GMgG

CyCy(Top View)元器件交易网www.cecb2b.comKC75118C 1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERA

3ABSOLUTE MAXIMUM RATINGS (NOTE)

NOTE:The device can be destroyed, if the applied voltage or temperature is higher than the absolute maximum rating voltage

or temperature.Table 2. Absolute Maximum RatingsCharacteristicsSymbolsMin.Max.Unit

Substrate voltageSUB - GND-0.340V

Vertical clock input voltageΦV1, ΦV3, - GND-0.330V

ΦV2, ΦV4 - GND -0.317V

ΦV1, ΦV3, - VL-0.330V

ΦV2, ΦV4 - VL -0.317V

ΦV1, ΦV2, ΦV3, ΦV4 - SUB-4010V

Horizontal clock input voltageΦV1, ΦV2, - GND-0.316V

ΦH1, ΦH2 - VL-0.316V

Voltage difference between vertical and

horizontal clock input pinsΦV1, - ΦV3-3030V

ΦV2, - ΦV4-1616V

ΦH1, ΦH2-1616V

ΦH1, ΦH2 - ΦV4-1616V

Output clock input voltageΦRG - GND-0.316V

Protection circuit bias voltageVL - SUB-400.3V

Operating temperatureTOP-1060°C

Storage temperatureTSTG-3080°C元器件交易网www.cecb2b.com1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERAKC75118C

4DC CHARACTERISTICS

CLOCK VOLTAGE CONDITIONSTable 3. DC CharacteristicsItemSymbolMin.Typ.Max.UnitRemar

Output stage drain biasVDD14.5515.015.45V

Reset gate voltage adjustment rangeVRGL0V

Protection circuit bias voltageVLThe lowest vertical clock level

Output stage drain currentIDD5mA

Table 4. Clock Voltage Conditions

ItemSymbolMin.Typ.Max.UnitRemark

Read-out clock voltageVVT14.5515.015.45VHigh level

Vertical transfer clock voltageVVM1 ~ VVM4-0.050.00.05VVVH = (VVH1+VVH2)/2

VVL1 ~ VVL4-8.5-8.0-7.5VVVH = (VVH1+VVH2)/2

Horizontal transfer clock voltageVΦH3.05.05.25VHigh

VHL -0.050.00.05VLow

Charge reset clock voltageVΦRG4.755.05.25VHigh

VRGLH - VRGLL0.8VLow

Substrate clock voltageVΦSUB21.522.523.5VShutter元器件交易网www.cecb2b.comKC75118C 1/5 INCH CCD IMAGE SENSOR FOR NTSC CAMERA

5DRIVE CLOCK WAVEFORM CONDITIONS

Read Out Clock Waveform

Vertical Transfer Clock Waveform

0V100%

90%

10%

0%VVH1,VVH3

trtwhtf

VVH1VVH

VVHH

VVLLVVLVVL1VVLHVVHLVVHLVVHH¥ÕV1

VVH

VVHLVVHHVVHH

VVHLVVH4

VVLVVLH

VVLLVVL4¥ÕV4VVHHVVHHVVH

VVHLVVHLVVH2

VVLVVLLVVLHVVL2¥ÕV2VVL3VVHH

VVLVVHLVVHLVVH3VVHHVVH

VVLHVVLL¥ÕV3

VVH=(VVH1+VVH2)/2VVL=(VVL3+VVL4)/2V¥ÕV=VVHn-VVLn(n=1~4)VVHH=VVH+0.3VVVHL=VVH-0.3VVVLH=VVL+0.3VVVLL=VVL-0.3V元器件交易网www.cecb2b.com

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APM4953KC-TRL中文资料

APM4953KC-TRL中文资料

Dual P-Channel Enhancement Mode MOSFETCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 1ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.APM4953KFeaturesApplications• -30V/-4.9A , RDS(ON)=53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V• Super High Dense Cell Design• Reliable and Rugged• SOP-8 Package• Lead Free Available (RoHS Compliant)• Power Management in Notebook Computer, Portable Equipment and Battery Powered SystemsPin DescriptionOrdering and Marking InformationP-Channel MOSFETAPM4953Handling CodeTemp. RangePackage CodePackage Code K : SOP-8Operating Junction Temp. Range C : -55 to 150°CHandling Code TU : Tube TR : Tape & ReelLead Free Code L : Lead Free Device Blank : Original DeviceAPM4953 K :APM4953XXXXXXXXXX - Date CodeLead Free CodeG1S1S2G2D1D1D2D2Top View of SOP − 8D2G2S2D2(4)(3)(5)(6)D1G1S1D1(2)(1)(7)(8)Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.元器件交易网Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2APM4953KAbsolute Maximum Ratings (TA = 25°C unless otherwise noted)Electrical Characteristics (TA = 25°C unless otherwise noted)Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V ID* Continuous Drain Current -4.9 IDM* Pulsed Drain Current VGS=-10V -20 A IS* Diode Continuous Forward Current -2 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 °C TA=25°C 2 PD* Power Dissipation for Single Operation TA=100°C 0.8 W RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. APM4953K Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA -30 V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.9A 53 60 RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-3.6A 80 95 mΩ VSDa Diode Forward Voltage ISD=-1.7A, VGS=0V -0.7 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 22.6 30 Qgs Gate-Source Charge 4.7 Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-4.9A 2 nC 元器件交易网Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 3APM4953KElectrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)APM4953K Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 11 Ω Ciss Input Capacitance 1260 Coss Output Capacitance 400 Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V, Frequency=1.0MHz 220 pF td(ON) Turn-on Delay Time 10 18 Tr Turn-on Rise Time 15 20 td(OFF) Turn-off Delay Time 22 38 Tf Turn-off Fall Time VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 15 25 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 元器件交易网Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 4APM4953K1E-41E-30.010.1110301E-30.010.112Mounted on 1in2 padRθJA : 62.5 oC/W0.010.020.050.10.2Single Pulse Duty = 0.5 Typical Characteristics-ID - Drain Current (A)Drain Current Tj - Junction Temperature (°C)Safe Operation Area-VDS - Drain - Source Voltage (V)Thermal Transient ImpedanceSquare Wave Pulse Duration (sec)Power DissipationPtot - Power (W)Tj - Junction Temperature (°C)-ID - Drain Current (A)0204060801001201401600.00.51.01.52.02.5TA=25oC 0204060801001201401600.01.53.04.56.0TA=25oC,VG=-10V 0.010.11101000.010.1110100300µsRds(on) Limit1sTA=25oC10ms1ms100msDC Normalized Transient Thermal Resistance元器件交易网Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 5APM4953KRDS(ON) - On - Resistance (mΩ)Drain-Source On Resistance-ID - Drain Current (A) Tj - Junction Temperature (°C)Gate Threshold VoltageNormalized Threshold Vlotage-VDS - Drain - Source Voltage (V)-ID - Drain Current (A) Output CharacteristicsTransfer Characteristics-VGS - Gate - Source Voltage (V)-ID - Drain Current (A)Typical Characteristics (Cont.)01234567802468101214161820-4V-2V-3VVGS= -5, -6, -7, -8, -9, -10V 024681012141618202030405060708090100110120 VGS= -4.5VVGS= -10V012345602468101214161820Tj=125oCTj=25oCTj=-55oC -50-2502550751001251500.20.40.60.81.01.21.41.61.8IDS = -250µA 元器件交易网

美国肯纳刀具刀片材质表

美国肯纳刀具刀片材质表

肯纳刀片材质表：(自己收集，如有错误，请见谅）

KC5510

材质结构：晶粒细化的硬质合金，配以先进的PVD

TiAlN涂层。

应用:KC5510是专门为高效率加工高温合金而设计的刀片材质。超级晶粒细化的硬质合金包含6%的基结构。具有极强的韧性。先进的PVD涂层使刀片具有极强的抗变形能力,所以可比其它PVD涂层刀具提高两倍以上的切削速度进行加工。

KC5525

材质结构:晶粒细化的高钴硬质合金,配以先进的PVD

TiAlN涂层.

应用：和KC5510一样具有先进的PVD涂层，同时拥有极晶细化的硬质合金10%钴基，高含量的钴为刀片在断续切削时提供了更高的刃口安全性。而且在高切削速度情况下保持抗变形能力，得益于同样细化的WC颗粒,可用于高温合金的中等到重型断续切削。

KU10T

材质结构:极具抗变形能力的硬质合金基体。配有先进的PVD涂层。

应用：KU10T是理想的用于半精加工的通用刀片材质。在加工状况稳定的情况下加工大多数钢、不锈钢、铸铁、非铁金属和高合金钢时表现优良。KU10T同样在加工淬硬钢和短屑材料时表现优良。

KU25T

材质结构:具有高韧性的和高耐磨性的硬质合金基体,并配以先进的PVD涂层。

应用：KU25T是大多数工件材料理想的精加工到通用加工刀片材料。比切断加工。在加工状况稳定的情况下，可加工大多数钢、不锈钢、铸铁、非铁金属和高合金钢。KU25T可以有效地加工淬硬钢和短屑工件材料。

KC8050

材质结构:新研平的带有厚氧化铝涂层的富钴硬质合金刀片材质。

应用：对于大范围的工件材料（钢、不锈钢、铸铁）从粗加工到精加工都有良好的加工表现。适应性强。

极具有耐磨性能和防止细微崩碎，使工件表面加工质量优良。在加工钢和铸铁时，则推存使用的是具有正前角的-MP和-FP槽型。

KC9040

材质结构：富钴基体的硬质合金,配以氧化铝涂层的刀片材质。

应用:适用于对刃口安全性有要求时，所有类型的钢、不锈钢和大多数工件材料的重型加工粗加工。特殊加工中.特殊设计的刀片涂层与处理方法确保了刀片的持续长寿命，适用于粗加工生产.

APTB1612SURKCGKC-F01;中文规格书,Datasheet资料

APTB1612SURKCGKC-F01;中文规格书,Datasheet资料

SPEC NO: DSAH3786 REV NO: V.3 DATE: JAN/12/2011 PAGE: 1 OF 6 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: D.M.Su ERP: 1203002054 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Features z1.6mmx1.25mm SMT LED, 0.65mm thickness. zBi-color,low power consumption. zWide viewing angle. zIdeal for backlight and indicator. zVarious colors and lens types available. zPackage : 2000pcs / reel. zMoisture sensitivity level : level 3. zRoHS compliant. Description The Hyper Red source color devices are made with Al-GaInP on GaAs substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3.The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications. /

751KD07JX中文资料

751KD07JX中文资料

821KD07JXTHRU180LD07JX11 to 510 VoltsVaristor

1.5 to 60 Joule Features• High Surge, High Energy• Designed to be Operated Continuously Across AC Power Lines • No Derating Up to 85к Ambient • Available in Tape and Reel or Bulk Pack Maximum Ratings • Operating Ambient Temperature Range: -55к to +85к• Storage Temperature Range: -55к to +125к• Temperature Coefficient (өV) of Clamping Voltage (VC) at Specified Test Current:<0.05%/к• Varistor voltage temperature coefficient:

CURRENT, ENERGY AND POWER DERATING CURVE

-55160608010012002040

60AMBIENT TEMPERATURE (°C)PERCENT OF RATED VALUE14080100120

Revision: 2 2006/09/09• ULRecognized File # E306895(UL1449) and E306942(UL1414)TMMicro Commercial Components󰀁󰀂󰀃󰀄󰀅󰀆󰀇󰀅󰀈󰀈󰀉󰀄󰀃󰀂󰀊󰀋󰀆󰀇omponents20736 Marilla Street Chatsworth󰀇󰀌󰀆󰀍󰀎󰀏󰀎󰀎󰀐󰀑󰀅󰀒󰀉󰀓󰀆󰀔󰀕󰀎󰀕 󰀆!󰀘󰀎"#󰀍󰀏󰀏$󰀊%󰀓󰀆󰀆󰀆󰀔󰀕󰀎󰀕 󰀆!󰀘󰀎"#󰀍󰀏󰀍MCC