IGBT文档

IGBT电源项目实施方案范文模板一、项目背景与概述IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）电源是一种高性能、高可靠性的功率器件，具有开关速度快、能耗小、效率高的特点。

它广泛应用于电力电子领域的逆变器、变频器等设备中。

本项目旨在设计并实施一套IGBT电源，用于驱动一定功率的交流电机。

二、项目目标1.设计一套满足特定需求的IGBT电源系统。

2.实现电源系统的高性能和高可靠性。

三、项目计划与进度安排1.项目计划：(1)确定需求和规格：1周时间。

(2)电源设计与仿真：2周时间。

(3)PCB设计与制造：1周时间。

(4)电源系统搭建与调试：2周时间。

(5)系统性能测试与优化：1周时间。

(6)编写项目实施报告：1周时间。

(7)项目验收与总结：1周时间。

2.进度安排：(1)第1周：需求分析、规格确定。

(2)第2周至第3周：电源设计与仿真。

(3)第4周：PCB设计与制造。

(4)第5周至第6周：电源系统搭建与调试。

(5)第7周：系统性能测试与优化。

(6)第8周：编写项目实施报告。

(7)第9周：项目验收与总结。

四、项目实施步骤与方法1.需求分析与规格确定：首先，通过与项目甲方沟通，充分了解电源系统的使用环境和要求，并确定电源系统应具备的功能和性能指标。

然后，在此基础上建立电源系统的详细规格表，明确各种参数和技术要求。

2.电源设计与仿真：根据电源系统的规格表，进行电源的拓扑结构设计和电路参数计算。

采用相关仿真软件，如PSIM、LTspice等进行电路仿真，验证设计的可行性和性能指标是否满足要求。

3.PCB设计与制造：根据电源设计的电路原理和布局，进行PCB（Printed Circuit Board，印刷电路板）的设计。

利用PCB设计软件，如Altium Designer、PADS等，绘制PCB的布线图、元件安装图和工程文件，并进行制造。

4.电源系统搭建与调试：按照PCB设计图纸和电源系统相关说明，按照设计要求，连接和安装电源系统的各个部件和元器件，如电源模块、滤波电路、驱动电路等。

HGTG18N120BND1200 V NPT IGBTHGTG18N120BND is based on Non- Punch Through (NPT)IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where lowconduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.Formerly Developmental Type TA49304.Ordering InformationPART NUMBER PACKAGE BRANDHGTG18N120BNDTO-24718N120BNDNOTE: When ordering, use the entire part number.SymbolEGCFeatures•26 A, 1200 V , T C = 110°C•Low Saturation V oltage: V CE (sat) = 2.45 V @ I C = 18 A •Typical Fall Time . . . . . . . . . . . . . 140ns at T J = 150°C •Short Circuit Rating •Low Conduction LossPackagingJEDEC STYLE TO-247TO-247GCEAbsolute Maximum Ratings T C = 25o C, Unless Otherwise SpecifiedHGTG18N120BND UNIT Collector to Emitter V oltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES1200V Collector Current ContinuousAt T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C2554AAt T C = 110o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C11026A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM160AGate to Emitter V oltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GES±20VGate to Emitter V oltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM±30V Switching Safe Operating Area at T J = 150o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA100A at 1200VPower Dissipation Total at T C = 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D390WPower Dissipation Derating T C > 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12W/o C Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J, T STG-55 to 150o C Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L260o CShort Circuit Withstand Time (Note 2) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC8μsShort Circuit Withstand Time (Note 2) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC15μs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.NOTES:Pulse width limited by maximum junction temperature.1.V2.CE(PK) = 960V, T J = 125o C, R G = 3Ω.Electrical Specifications T C = 25o C, Unless Otherwise SpecifiedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BV CES I C = 250μA, V GE = 0V1200--V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE = 0V15--V Collector to Emitter Leakage Current I CES V CE = 1200V T C = 25o C--250μAT C = 125o C-300-μAT C = 150o C--4mACollector to Emitter Saturation Voltage V CE(SAT)I C = 18A,V GE = 15V T C = 25o C- 2.45 2.7V T C = 150o C- 3.8 4.2VGate to Emitter Threshold Voltage V GE(TH)I C = 150μA, V CE = V GE 6.07.0-V Gate to Emitter Leakage Current I GES V GE = ±20V--±250nA Switching SOA SSOA T J = 150o C, R G = 3Ω, V GE = 15V,L = 200μH, V CE(PK) = 1200V100--A Gate to Emitter Plateau Voltage V GEP I C = 18A, V CE = 600V-10.5-VOn-State Gate Charge Q G(ON)I C = 18A,V CE = 600V V GE = 15V-165200nC V GE = 20V-220250nCCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 25o CI CE = 18AV CE = 960VV GE = 15VR G = 3ΩL = 1mHTest Circuit (Figure 20)-2328nsCurrent Rise Time t rI-1722ns Current Turn-Off Delay Time t d(OFF)I-170200ns Current Fall Time t fI-90140ns Turn-On Energy E ON- 1.9 2.4mJ Turn-Off Energy (Note 3)E OFF- 1.8 2.2mJCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 150o C I CE = 18A V CE = 960V V GE = 15V R G = 3Ω L = 1mHTest Circuit (Figure 20)-2126ns Current Rise Timet rI -1722ns Current Turn-Off Delay Time t d(OFF)I -205240ns Current Fall Time t fI -140200ns Turn-On Energy E ON - 3.7 4.9mJ Turn-Off Energy (Note 3)E OFF - 2.6 3.1mJ Diode Forward Voltage V EC I EC = 18A- 2.6 3.2V Diode Reverse Recovery Timet rrI EC = 18A, dI EC /dt = 200A/μs -6075ns I EC = 2A, dI EC /dt = 200A/μs-4455nsThermal Resistance Junction To CaseR θJCIGBT --0.32o C/W Diode--0.75o C/WNOTE:3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.Electrical SpecificationsT C = 25o C, Unless Otherwise Specified (Continued)PARAMETERSYMBOL TEST CONDITIONSMIN TYP MAX UNIT Typical Performance Curves Unless Otherwise SpecifiedFIGURE 1. T C , CASE TEMPERATURE (o C)I C E , D C C O L L E C T O R C U R R E N T (A )50602575100125150********V GE = 15V50DC COLLECTOR CURRENT vs CASETEMPERATUREFIGURE 2. V CE , COLLECTOR TO EMITTER VOLTAGE (V)1400800I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )204060080040020010001200010012060T J = 150o C, R G = 3Ω, V GE = 15V , L = 200μHMINIMUM SWITCHING SAFE OPERATING AREAFIGURE 3. I CE , COLLECTOR TO EMITTER CURRENT (A)T J = 150o C, R G = 3Ω, L = 1mH, V CE = 960Vf M A X , O P E R A T I N G F R E Q U E N C Y (k H z )51104020501010030T C = 75o C, V GE = 15V , IDEAL DIODEf MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )R ØJC = 0.32o C/W, SEE NOTES P C = CONDUCTION DISSIPATION (DUTY FACTOR = 50%)f MAX2 = (P D - P C ) / (E ON + E OFF )T CV GE110o C 12V15V 15V 75o C110o C75o C12V OPERATING FREQUENCY vs COLLECTOR TOEMITTER CURRENTFIGURE 4. V GE , GATE TO EMITTER VOLTAGE (V)I S C , P E A K S H O R T C I R C U I T C U R R E N T (A )t S C , S H O R T C I R C U I T W I T H S T A N D T I M E (μs )121314151651015202550100150200300t SCI SC30250V CE = 960V , R G = 3Ω, T J = 125o CSHORT CIRCUIT WITHSTAND TIMEFIGURE 5. 024V CE , COLLECTOR TO EMITTER VOLTAGE (V)I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )0204068106080PULSE DURATION = 250μsDUTY CYCLE < 0.5%, V GE = 12V T C = -55o CT C = 25o CT C = 150o CCOLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 6. I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )V CE , COLLECTOR TO EMITTER VOLTAGE (V)406080246810201000T C = -55o CT C = 25o CT C = 150o CDUTY CYCLE < 0.5%, V GE = 15V PULSE DURATION = 250μsCOLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 7. E O N 2, T U R N -O N E N E R G Y L O S S (m J )106I CE , COLLECTOR TO EMITTER CURRENT (A)8421510512253003540T J = 25o C, V GE = 12V , V GE = 15VT J = 150o C, V GE = 12V , V GE = 15VR G = 3Ω, L = 1mH, V CE = 960V 20TURN-ON ENERGY LOSS vs COLLECTOR TOEMITTER CURRENT FIGURE 8. 3.5I CE , COLLECTOR TO EMITTER CURRENT (A)E OF F , T U R N -O F F E N E RG Y L O S S (m J )0.5151051.02.51.53.04.04.52530R G = 3Ω, L = 1mH, V CE = 960VT J = 25o C, V GE = 12V OR 15VT J = 150o C, V GE = 12V OR 15V35402.020TURN-OFF ENERGY LOSS vs COLLECTOR TOEMITTER CURRENTFIGURE 9. I CE , COLLECTOR TO EMITTER CURRENT (A)t d I ,T U R N -O N D E L A Y T I M E (n s )5101520253035154025303540R G = 3Ω, L = 1mH, V CE = 960VT J = 25o C, T J = 150o C, V GE = 12VT J = 25o C, T J = 150o C, V GE = 15V20TURN-ON DELAY TIME vs COLLECTOR TOEMITTER CURRENTFIGURE 10. I CE , COLLECTOR TO EMITTER CURRENT (A)t r I ,R I S E T I M E (n s )100208060305402520154035100120R G = 3Ω, L = 1mH, V CE = 960VT J = 25o C, T J = 150o C, V GE = 12VT J = 25o C OR T J = 150o C, V GE = 15V TURN-ON RISE TIME vs COLLECTOR TOEMITTER CURRENTFIGURE 11. 1020520015100150I CE , COLLECTOR TO EMITTER CURRENT (A)t d (O F F )I , T U R N -O F F D E L A Y T I M E (n s )303502503004035R G = 3Ω, L = 1mH, V CE = 960V25V GE = 12V , V GE = 15V , T J = 25o CV GE = 12V , V GE = 15V , T J = 150o CTURN-OFF DELAY TIME vs COLLECTOR TOEMITTER CURRENT FIGURE 12. I CE , COLLECTOR TO EMITTER CURRENT (A)t f I , F A L L T I M E (n s )10525100150155020025030204035R G = 3Ω, L = 1mH, V CE = 960V1257517522525T J = 25o C, V GE = 12V OR 15VT J = 150o C, V GE = 12V OR 15VFALL TIME vs COLLECTOR TO EMITTERCURRENTFIGURE 13. I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )50136891012V GE , GATE TO EMITTER VOLTAGE (V)111001501415200T C = 25o CT C = 150o CT C = -55o CPULSE DURATION = 250μsDUTY CYCLE < 0.5%, V CE = 20V 7TRANSFER CHARACTERISTIC FIGURE 14. V G E , G A T E T O E M I T T E R V O L T A G E (V )Q G , GATE CHARGE (nC)520010050150V CE = 400VV CE = 800VI G(REF) = 2mA, R L = 33.3Ω, T C = 25o CV CE = 1200V1015200GATE CHARGE WA VEFORMSFIGURE 15. V CE , COLLECTOR TO EMITTER VOLTAGE (V)C , C A P A C I T A N C E (n F )C RES 05101520251C IESC OES2456FREQUENCY = 1MHz3CAPACITANCE vs COLLECTOR TO EMITTERVOLTAGEFIGURE 16. I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )V CE , COLLECTOR TO EMITTER VOLTAGE (V)10250102530DUTY CYCLE < 0.5%, T C = 110o C PULSE DURATION = 250μs201534V GE = 10V5V GE = 15V OR 12VCOLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 17. t 1t 2P DSINGLE PULSE0.50.20.10.050.02t 1,RECTANGULAR PULSE DURATION (s)10-210-110010-510-310-210-110010-4DUTY FACTOR, D = t 1 / t 2PEAK T J = (P D X Z θJC X R θJC ) + T C Z θJ C ,N O R M A L I Z E D T H E R M A L R E S P O N S E0.01NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASEFIGURE 18. V F , FORWARD VOLTAGE (V)I F , F O R W A R D C U R R E N T (A )10011012345150o C25o CDIODE FORWARD CURRENT vs FORWARDVOLTAGE DROPFIGURE 19. I F , FORWARD CURRENT (A)1020702013060t , R E C O V E R Y T I M E S (n s )10405t rr t a50t b2T C = 25o C, dI EC /dt = 200A/μsRECOVERY TIMES vs FORWARD CURRENTTest Circuits and WaveformsFIGURE 20. R G = 3ΩL = 1mHV DD = 960V+-HGTG18N120BNDINDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. t fIt d(OFF)It rI t d(ON)I 10%90%10%90%V CEI CEV GEE OFFE ONSWITCHING TEST WAVEFORMSHandling Precautions for IGBTsInsulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is notdischarged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.3. Tips of soldering irons should be grounded.4. Devices should never be inserted into or removed from circuits with power on.5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM . Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region.6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited orfloating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.7. Gate Protection - These devices do not have an internalmonolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.Operating Frequency InformationOperating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I + t d(ON)I ). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. t d(OFF)I and t d(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for anapplication other than T JM . t d(OFF)I is important when controlling output ripple under a lightly loaded condition.f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON ). Theallowable dissipation (P D ) is defined by P D = (T JM - T C )/R θJC . The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (P C ) are approximated by P C = (V CE x I CE )/2.E ON and E OFF are defined in the switching waveforms shown in Figure 21. E ON is the integral of the instantaneous power loss (I CE x V CE ) during turn-on and E OFF is the integral of theinstantaneous power loss (I CE x V CE ) during turn-off. All tail losses are included in the calculation for E OFF ; i.e., the collector current equals zero (I CE = 0).Mechanical DimensionsTO-247A03TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE AP P LICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.2.A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms 2Cool AccuPower AX-CAP ®*BitSiCBuild it NowCorePLUSCorePOWERCROSSVOLTCTLCurrent Transfer Logic DEUXPEED ®Dual Cool EcoSPARK ®EfficentMax ESBC Fairchild®Fairchild Semiconductor®FACT Quiet SeriesFACT®FAST ®FastvCore FETBenchFPS F-PFS FRFET ®Global Power Resource SM Green Bridge Green FPS Green FPS e-Series G max GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuckMICROCOUPLER MicroFET MicroPakMicroPak2 MillerDrive MotionMax mWSaver OptoHiT OPTOLOGIC ®OPTOPLANAR ®PowerTrench ®PowerXS Programmable Active Droop QFET ®QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeSignalWiseSmartMax SMART STARTSolutions for Your SuccessSPM ®STEALTH SuperFET ®SuperSOT -3SuperSOT -6SuperSOT -8SupreMOS ®SyncFET Sync-Lock ®*TinyBoostTinyBuckTinyCalcTinyLogic ®TINYOPTOTinyPowerTinyPWM TinyWireTranSiC ®TriFault DetectTRUECURRENT ®*P SerDesUHC ®Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Datasheet Identification Product Status DefinitionAdvance InformationFormative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification NeededFull Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.ObsoleteNot In ProductionDatasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation s Anti-Counterfeiting P olicy. Fairchild s Anti-Counterfeiting P olicy is also stated on our external website, , under Sales Support .Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. P roducts customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.Rev. I64®。

最经典的IGBT资料大全，技术详解，设计技巧，应用案例IGBT系统的介绍就IGBT的定义、工作原理、等效电路、特性参数、设计技巧等作全面介绍……设计技巧IGBT的驱动和过流保护电路的研究IGBT目前被广泛使用的具有自关断能力的器件，广泛应用于各类固态电源中。

IGBT的工作状态直接影响整机的性能，所以合理的驱动电路对整机显得很重要，但是如果控制不当，它很容易损坏，其中一种就是发生过流而使IGBT损坏，本文主要研究了IGBT的驱动和短路保护问题，就其工作原理进行分析，设计出具有过流保护功能的驱动电路，并进行了仿真研究。

隔离驱动IGBT和Power MOSFET等功率器件所需要的一些技巧对隔离驱动IGBT和Power MOSFET等功率器件出现的一些常见问题的汇总和解答功率器件IGBT应用中的常见问题解决方法随着现代电力电子技术的高频大功率化的发展，IGBT在应用中潜在的问题越来越凸出，开关过程引起的电压、电流过冲，影响到了逆变器的工作效率和工作可靠性。

为解决以上问题，过电流保护、散热及减少线路电感等措施被积极采用，缓冲电路和软开关技术也得到了广泛的研究，取得了迅速的进展。

本文就针对这方面进行了分析。

使用栅极电阻控制IGBT的开关IGBT的动态性能可通过栅极电阻值来调节。

栅极电阻影响IGBT的开关时间、开关损耗及各种其他参数，从电磁干扰EMI到电压和电流的变化率。

因此，栅极电阻必须根据具体应用的参数非常仔细地选择和优化。

杂散电感对高效IGBT逆变器设计的影响当工作在相同条件下，IGBT针对提高软度需求的设计优化将会付出开关损耗提高的代价。

除开关损耗外，开通和关断速度、电流突变和振荡(EMI)的发生也越来越受到重视。

寄生杂散电感对直流母线谐振频率和二极管电流突变起到了重要作用。

至少从EMI角度考虑，二极管电流突变将会对通过增加杂散电感或提高IGBT开通速度来降低开通损耗有所限制新型IGBT系统电路保护设计的解决方案在研究IGBT失效机理的基础上，通过整合系统内外部来突破设计瓶颈。

V CES Collector-to-Emitter Voltage 600V I C Continuos Collector Current @ T C = 25°C 50A@ T C = 100°C38I CM Pulsed Collector Current 200I LM Peak Switching Current200I F Diode Continuous Forward Current @ T C = 100°C 25I FM Peak Diode Forward Current 200V GE Gate-to-Emitter Voltage± 20V V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500P DMaximum Power Dissipation @ T C = 25°C 250Wper single IGBT@ T C = 100°C 10025MT060WF50 AV CES = 600VAbsolute Maximum Ratings"FULL-BRIDGE" IGBT MTPParametersMaxUnitsWarp Speed IGBTGen. 4 Warp Speed IGBT Technology HEXFRED TM Antiparallel Diodes with UltraSoft Reverse RecoveryVery Low Conduction and Switching Losses Optional SMT Thermistor Aluminum Nitride DBCVery Low Stray Inductance Design for High Speed OperationFeaturesOptimized for Welding, UPS and SMPS ApplicationsOperating Frequencies > 20 kHz Hard Switching,>200 kHz Resonant ModeLow EMI, requires Less Snubbing Direct Mounting to Heatsink PCB Solderable TerminalsVery Low Junction-to-Case Thermal Resistance UL Approved E78996BenefitsM MTPBulletin I27143 Rev.B 07/0325MT060WF2Bulletin I27143 Rev.B 07/03Q g Total Gate Charge (turn-on)175263nCI C = 25A Q ge Gate-Emitter Charge (turn-on)2741V CC = 480V Q gc Gate-Collector Charge (turn-on)71107V GE = 15V E on Turn-On S witching L oss 134201µJR g = 5Ω , I C = 25A E off Turn-Off Switching Loss 415623V CC = 480V E ts Total Switching Loss 549824V GE = ±15VE on Turn-On S witching L oss 391586µJR g = 5Ω , I C = 25A E off Turn-Off S witching L oss 492738V CC = 480VE ts Total Switching Loss 8831324V GE = ±15V, T J = 125°C C ies Input Capacitance36105415pFV GE = 0VC oes Output Capacitance7141071V CC = 30V C res Reverse Transfer Capacitance 5887f = 1.0 MHztrr Diode Reverse Recovery Time 50ns V R = 200V, I C = 25A Irr Diode Peak Reverse Current 4.5A di/dt = 200A/µsQrrDiode Recovery Charge112nC di (rec)M/dtDiode PeakRate of Fall of Recovery 250A/µs During t bSwitching Characteristics @ T J = 25°C (unless otherwise specified)ParametersMin Typ Max Units Test ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage 600V V GE = 0V, I C = 250µA∆V (BR)CES /Temperature Coeff. of +0.6V/°C V GE = 0V, I C = 4mA (25-125°C)∆T JBreakdown VoltageV CE(ON)Collector-to-Emitter Saturation Voltage2.223.14VV GE = 15V, I C = 25A 2.43 3.25V GE = 15V, I C = 50A1.65 1.93V GE = 15V, I C = 25A T J = 150°C2.08 2.45V GE = 15V, I C = 50AT J = 150°C V GE(th)Gate Threshold Voltage 36V CE = V GE , I C = 250µA∆V GE(th)/Temperature Coeff. of -17mV/°C V CE = V GE , I C = 250µA (25-125°C)∆T J Threshold Voltage g fe Transconductance43S V CE = 100V, I C = 25A, PW = 80µs I CES Zero Gate Voltage Collector Current (1)250µA V GE = 0V, V CE = 600V, T J = 25°C 10mA V GE = 0V, V CE = 600V, T J = 150°C I GES Gate-to-Emitter Leakage Current ±250nA V GE = ± 20V V FMDiode Forward Voltage Drop1.36 1.64VI C = 25A 1.57 1.93I C = 50A1.19 1.42I C = 25A, T J = 150°C 1.481.80I C = 50A, T J = 150°C Electrical Characteristics @ T J = 25°C (unless otherwise specified)ParametersMin Typ Max Units Test Conditions(1) I CES includes also opposite leg overall leakageBulletin I27143 Rev.B 07/03325MT060WFThermal- Mechanical SpecificationsT J Operating Junction Temperature Range - 40150°C T STG Storage Temperature Range - 40125R thJC Junction-to-Case IGBT 0.5°C/ WDiode 0.9R thCSCase-to-SinkModule0.06(Heatsink Compound Thermal Conductivity = 1 W/mK)Clearance (2) (external shortest distance in air5.5mm between two terminals)Creepage (2) (shortest distance along external 8mm surface of the insulating material between 2 terminals )Weight66gParametersMinTyp MaxUnits(2) Standard version only i.e. without optional thermistorFig. 4 - Maximum Collector Current vs. CaseTemperatureFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction Temperature255075100125150T C Case Temperature (°C)0102030405060I C M a x i m u m D C C o l l e c t o r C u r r e n t (A )20406080100120140160T J , Junction Temperature (°C)1.251.752.252.75V C E, C o l l e c t o r -t o E m i t t e r V o l t a g e (V )25MT060WF4Bulletin I27143 Rev.B 07/03Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)t 1 , Rectangular Pulse Duration (sec)t 1 , Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z )Bulletin I27143 Rev.B 07/03525MT060WFFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistanceFig. 10 - Typical Switching Losses vs.Junction Temperature1101001000V CE (V)01000200030004000500060007000C a p a c i t a n c e (p F )50100150200Q G, Total Gate Charge (nC)0.04.08.012.016.0V G E , G a t e -t o -E m i t t e r V o l t a g e (V )102030405060R G , Gate Resistance (Ω)0.00.51.01.5S w i t c h i n g L o s s e s (m J )20406080100120140160T J , Junction Temperature (°C)0.1110T o t a l Sw i t c h i n g L o s s e s (m J )25MT060WF6Bulletin I27143 Rev.B 07/03Fig. 11 - Typical Switching Losses vs.Collector-to-Emitter CurrentFig. 12 - Turn-Off SOAFig. 13 - Maximum Forward Voltage Drop vs.Instantaneous Forward Current102030405060I C, Collector Current (A)0.00.51.01.52.0S w i t c h i n g L o s s e s (m J )1101001000V CE , Collector-to-Emitter Voltage (V)1101001000I C , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )0.40.81.21.62.02.4Forward Voltage Drop - V F ( V )110100I n s t a n t a n e o u s F o r w a r d C u r r e n t - I F ( A )Bulletin I27143 Rev.B 07/03725MT060WFFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dtFig. 14 - Typical Reverse Recovery vs. di f /dt Fig. 15 - Typical Recovery Current vs. di f /dt510152025301001000fdi /dt - (A/µs)204060801001201401001000fdi /dt - (A/µs)1001000100001001000fdi /dt - (A/µs)2004006008001000120014001001000fdi /dt - (A/µs)t r r - (n C )I r r - ( A )Q r r - (n C )d i (re c ) M /d t - (A /µs )25MT060WF8Bulletin I27143 Rev.B 07/03Bulletin I27143 Rev.B 07/03925MT060WFIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 07/01Data and specifications subject to change without notice.This product has been designed and qualified for Industrial Level.Qualification Standards can be found on IR's Web site.Ordering Information Table。