RA20H8994M中文资料

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nd
CONDITIONSຫໍສະໝຸດ MINTYPMAX
UNIT
MHz W %
896-902/ 935-941 VDD=12.5V, VGG=5V, Pin=50mW Pout=20W(VGG control) VDD=12.5V Pin=50mW 20 25 -30 3:1 1 No parasitic oscillation No degradation or destroy
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER
f Pout ηT 2fo ρ in IGG — — Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance VDD=10.0-15.5V, Pin=25-70mW, Pout=1 to 25W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=20W (VGG control), Load VSWR=8:1
元器件交易网
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8994M
BLOCK DIAGRAM
896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
50
Gp
Pout
20 16 12
40 30 20 10 0 -15
IDD f=935MHz, VDD =12.5V, VGG=5V
POWER GAIN Gp(dB)
40 30 20 10 0 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin (dBm)
IDD f=941MHz, VDD =12.5V, VGG =5V
24 20 16 12 IDD
f=902MHz, VDD =12.5V, VGG=5V
50 POWER GAIN Gp(dB) 40 30 20 10 0 -15 -10
POWER GAIN Gp(dB)
Gp
Gp
OUTPUT POWER P
DRAIN CURRENT I
40 30 20 10 0 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin (dBm) IDD
VDD=12.5V Pin=50mW
40 30 20 10 0 955
HARMONICS (dBc)
OUTPUT POWER P
-40
INPUT VSWR
TOTAL EFFICIENCY
-50
2nd @Pout=20W
-60 3 @Pout =20W -70 885 895 905 915 925 935 FREQUENCY f(MHz) 945 955
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
2nd, 3 HARMONICS versus FREQUENCY
rd
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
60
out (W)
60 50
-20 -30
VDD=12.5V Pi n=50mW
50
ρin (-)
Pout @VGG=5V
ηT (%)
40 30 20 10 ρ in @Pout=20W 0 885 895 905 915 925 935 FREQUENCY f(MHz) 945 η T @Pout=20W
SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=896-902/ 935-941MHz, ZG=ZL=50Ω
14
16
RA20H8994M
MITSUBISHI ELECTRIC 3/9
DRAIN CURRENT
rd
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60
out (dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
24
DD (A)
60
out (dBm)
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
RATING 17 6 100 40 -30 to +110 -40 to +110 UNIT V V mW W °C °C
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
DRAIN CURRENT I
ID D
OUTPUT POWER P
10 8
Pout
DD (A)
f=896MHz, VGG=5V, Pi n=50mW
14 12
12 10 8 6 4 2 0
DRAIN CURRENT I DRAIN CURRENT I
6 4 2 0
4
6 8 10 12 DRAIN VOLTAGE V D (V) D
f=896MHz, VDD =12.5V, VGG=5V
16 12 8 4 0
OUTPUT POWER P
8 4 0
-5
0
5
10
15
20
INPUT POWER Pin (dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION: ORDER NUMBER RA20H8994M-E01 RA20H8994M-01
DRAIN CURRENT I
8 4 0
OUTPUT POWER P
8 4 0
-10
-5
0
5
10
15
20
INPUT POWER Pin (dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
80
out (W)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
dBc — mA — —
All parameters, conditions, ratings, and limits are subject to change with out notice.
RA20H8994M
MITSUBISHI ELECTRIC 2/9
25 April 2003
元器件交易网
60 OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) 50
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
24
DD (A)
60
out (dBm)
24
DD (A)
20 16 12
16
out (W)
80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE V (V) DD 14 16
Pout f=902MHz, VGG =5V, Pin =50mW IDD
16 14
DD (A)
70 60 50 40 30 20 10 0 2
OUTPUT POWER P
(Japan - packed without desiccator)
SUPPLY FORM Antistatic tray, 10 modules/tray
RA20H8994M
MITSUBISHI ELECTRIC 1/9
25 April 2003
元器件交易网
ELECTROSTATIC SENSITIVE DEVICE
DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 896-902/ 935-941MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power