2SD2114KT146V;2SD2114KT146W;2SD2144STPW;2SD2144STPV;2SD2144STPU;中文规格书,Datasheet资料

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c 2012 ROHM Co., Ltd. All rights reserved. ○
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2012.01 - Rev.C
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2SD2114K
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10000
TRANSITION FREQUENCY : fT (MHz)
∗ Measured using pulse current

c 2012 ROHM Co., Ltd. All rights reserved. ○
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2012.01 - Rev.C
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2SD2114K
Packaging specifications and hFE
Data Sheet
Ta=25°C VCE=10V Measured using pulse current.
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
5000 2000 1000 500 200 100 50 20 10 −1 −2
ON RESISTANCE : Ron (Ω)
Ta=25°C f=1MHz IE=0A
100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5
Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ
−5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output characteristics ( )
10000 5000
DC CURRENT GAIN : hFE
Electrical characteristic curves
2.0
COLLECTOR CURRENT : IC (mA)
Ta=25°C 2.0μA 1.8μA
1000
COLLECTOR CURRENT : IC (mA)
1.6
1.4μA 1.2μA
800
1.2mA 1.0mA
COLLECTOR CURRENT : IC (mA)
1.6μA
1.8mA 2.0mA 1.6mA 1.4mA
1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 Ta=100°C 25°C −25°C
VCE=3V Measured using pulse current.
1.2
1.0μA 0.8μA 0.6μA 0.4μA 0.2μA
Package Code Type 2SD2114K hFE VW Basic ordering unit (pieces) Taping T146 3000
Data Sheet
hFE values are classified as follows :
Item hFE V W 820 to 1800 1200 to 2700
1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100°C 25°C −25°C
IC/IB=25 Measured using pulse current.
5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 IC/IB=10 25 50 100
600
0.8mA 0.6mA
0.8
400
0.4mA 0.2mA
0.4 0 0
200 0 0
0.1Leabharlann 0.20.30.4
IB=0
0.5
2
Ta=25°C Measured using IB=0mA pulse current. 4 6 8 10
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1
2
5
10
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASE CURRENT : IB (mA)
Fig.10 Gain bandwidth product vs. emitter current
Fig.11 Collector output capacitance vs. collector-base voltage
0∼0.1
0.3∼0.6
ROHM : SMT3 EIAJ : SC-59
Abbreviated symbol: BB

(1) Emitter (2) Base (3) Collector
∗ Denotes h
FE
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 25 20 12 0.5 1 0.2 150 −55 to +150 Unit V V V A(DC) A(Pulse) W °C °C
lC/lB=10 Measured using pulse current.
50 100 200 5001000
50 100 200
500 1000
50 100 200
5001000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.2 Grounded emitter output characteristics ( )
5000
DC CURRENT GAIN : hFE
Fig.3 Grounded emitter propagation characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Base-emitter saturation voltage vs. collector current ( )
Fig.9 Base-emitter saturation voltage vs. collector current ( )
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Notice
Notes
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