CBR1-100中文资料

朱志鹏
2005-4
3
CBR系统工作原理
在发动机缸盖的进气侧，每一个燃烧室对应有两个分开的进气道，其中一 个为中性气道设计，一个为切向气道设计。当中性气道关闭时，空气主要通过 切向气道进入到燃烧室，于是在燃烧室内会形成涡流，这样就加速和显著提高 了燃油和空气的混合率，因此也就提高了燃烧效率。同时对EGR效应也有一定 的改善，这对燃油消耗和排放都有好处。
CBR SYSTEM DURABILITY TEST
After test (without auxiliary components)
F i g . ：9
150 140 130 120 110
-77 0 -6 82
-66
-72
-74
-72
-72
-34
-36
-38
-40
- 42
-44
-3 2
100
-74
6 -4
TORQUE [Nm]
0 -3
-50
-74
-6 -7 4 0
-28
90 80
-48
-74
-1 2
-54 -7 4
70 -26 60
-72
-74
-6-58 4
-16
-2 0
40 30 20 10 1000 1500 2000 2500 3000 3500 4000 SPEED [r/min]
--7 72 4 -6 6
滑板式CBR系统开关状态
朱志鹏
2005-4
5
滑板式CBR系统执行过程
当发动机要求CBR系统工作的时候，首先由ECU向真空控制阀发出信号， 于是真空控制阀打开，从真空罐或真空泵的真空就进入到真空执行器，于是 真空执行器内部真空度也随之改变，弹簧机构开始运作，从而使摇臂转动， 滑板移动，从而起到打开和关闭气道的作用。 下图为滑板式真空控制型的CBR系统执行机构零件

MBR1100Preferred DeviceAxial Lead Rectifier...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarityprotection diodes.•Low Reverse Current•Low Stored Charge, Majority Carrier Conduction•Low Power Loss/High Efficiency•Highly Stable Oxide Passivated Junction•Guard-Ring for Stress Protection•Low Forward V oltage•150°C Operating Junction Temperature•High Surge CapacityMechanical Characteristics:•Case: Epoxy, Molded•Weight: 0.4 gram (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case•Shipped in plastic bags, 1000 per bag•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number•Polarity: Cathode Indicated by Polarity Band•Marking: B1100MAXIMUM RATINGSPreferred devices are recommended choices for future use and best overall value.THERMAL CHARACTERISTICS (See Note 2)ELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)Figure 2. Typical Reverse Current {Figure 3. Current Derating (Mounting Method 3 per Note 1)Figure 4. Power Dissipation20102.05.01.0V R , REVERSE VOLTAGE (VOLTS)609000.20.040.020.011201600T A , AMBIENT TEMPERATURE (°C)4.03.02.01.00I F(AV), AVERAGE FORWARD CURRENT (AMPS)1.004.03.02.01.02.0140i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )I I P F (A V ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )0.50.20.1708010203040500.10.41.020********* 3.0 4.0 5.00.050.02100, R E V E R S E C U R R E N T ( A )R m 4.02.01020100402001 K400200180, A V E R A G E F O R W A R D C U R R E N T (A M P S )F (A V ){ The curves shown are typical for the highest voltagedevice in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R .Figure 5. Typical Capacitance2040V R , REVERSE VOLTAGE (VOLTS)150504*********C , C A P A C I T A N C E (p F )50100601001070809070609080NOTE 1 — MOUNTING DATA:Data shown for thermal resistance junction-to-ambient (R q JA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.Typical Values for Rin Still AirMounting Method 1P .C. Board with 1-1/2″ x 1-1/2″copper surface.Mounting Method 3P .C. Board with 1-1/2″ x 1-1/2″copper surface.VECTOR PIN MOUNTINGMounting Method 2NOTE 2 — THERMAL CIRCUIT MODEL:(For heat conduction through the leads)Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink.Terms in the model signify:T A = Ambient Temperature T C = Case Temperature T L = Lead Temperature T J = Junction Temperature R q S = Thermal Resistance, Heat Sink to Ambient R q L = Thermal Resistance, Lead to Heat Sink R q J = Thermal Resistance, Junction to Case P D = Power Dissipation(Subscripts A and K refer to anode and cathode sides,respectively.) V alues for thermal resistance components are:R q L = 100°C/W/in typically and 120°C/W/in maximum.R θJ = 36°C/W typically and 46°C/W maximum.NOTE 3 — HIGH FREQUENCY OPERATION:Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5)Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency,whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.PACKAGE DIMENSIONSCASE 59-10ISSUE SAXIAL LEAD, DO-41DIM MIN MAX MIN MAX MILLIMETERSINCHES A 4.10 5.200.1610.205B 2.00 2.700.0790.106D 0.710.860.0280.034F −−− 1.27−−−0.050K25.40−−−1.000−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.59−04 OBSOLETE, NEW STANDARD 59−09.4.59−03 OBSOLETE, NEW STANDARD 59−10.5.ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY6.POLARITY DENOTED BY CATHODE BAND.7.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.PUBLICATION ORDERING INFORMATIONJAPAN : ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051Phone : 81-3-5773-3850。

October 21, 1998
Gaugino Mass without Singlets
hep-ph/9810442 v2 22 Oct 1998
CERN-TH/98-337 LBNL-42419 UCB-PTH-98/50 UMD-PP99-037 hep-ph/9810442
Gian F. Giudicey, Markus A. Lutyz, Hitoshi Murayama , and Riccardo Rattazziy yTheory Division, CERN Geneva, Switzerland z Department of Physics, University of Maryland College Park, Maryland 20742, USA Department of Physics, University of California Berkeley, California 94720, USA
This work was supported in part by the U.S. Department of Energy under Contracts DE-AC0376SF00098, in part by the National Science Foundation under grants PHY-95-14797 and PHY-9802551, and by the Alfred P. Sloan Foundation.
1 Introduction
Supersymmetry (SUSY) is arguably the most attractive mechanism to stabilize the hierarchy between the fundamental scale (e.g. the Planck scale M 1018 GeV) and the electroweak scale (MW 100 GeV). However, superpartners of the standardmodel particles have not been observed up to energies of order MW , so SUSY must be broken at or above the weak scale. The phenomenology of SUSY depends crucially on the mechanism of SUSY breaking and the way that SUSY breaking is communicated to the observable sector. Communication of SUSY-breaking e ects by supergravity (SUGRA) interactions is in some ways the most attractive scenario. In models of this type, SUSY is broken in a hidden sector and gravitational-strength interactions communicate SUSY breaking to the observable sector. The main advantage of this scenario lies in its theoretical appeal: the key ingredients are either present of necessity (e.g. SUGRA) or very wellmotivated (e.g. hidden sectors are generically present in string theories). The main disadvantage of this scenario is that at present there is no convincing explanation for the degeneracy of squark masses required to avoid large avor-changing neutral current e ects. In the context of string theory and SUGRA models with singlets, there are also cosmological problems related to the existence of uncharged elds with almost at potentials and interactions suppressed by powers of the Planck scale. In order to explain the origin of the SUSY breaking scale (and hence the weak scale) the most attractive scenario is that SUSY is broken dynamically 1, 2, 3]. In recent years, it has been found that this occurs in many asymptotically-free supersymmetric gauge theories. In these models, dimensional transmutation generates the hierarchy between the SUSY breaking scale SUSY and the Planck scale, and the SUSY-breaking masses are of order 2 =M . The most important challenge of SUSY constructing phenomenologically viable models of dynamical SUSY breaking in the hidden sector is generating su ciently large gaugino masses 3, 4]. In models without gauge singlets in the hidden sector, the gaugino mass is conventionally believed to be extremely suppressed, at most of order 3 =M 2 ' 1 keV. There have been a variSUSY ety of solutions discussed in the literature 5, 6, 7], all of which involve gauge singlets with SUSY-breaking VEV's, and require more or less complicated model-building. It is not at all clear whether any of these solutions can work in the context of string theory, where one singlet eld, the dilaton, couples to all gauge kinetic terms. Obtaining realistic gaugino masses in string theory therefore appears to require a large F component for the dilaton (in addition to the usual dilaton stabilization problem),

(3)夯锤和导管:夯锤的底面直径50mm,总质量4.5kg。夯锤在导管内的总 行程为450mm,夯锤的形式和尺寸与重型击实试验法所用的相同。
(4)贯入杆,端面直径50mm、长约100mm的金属柱。
(3)夯锤和导管： (4)贯人杆：
(5)路面材料强度仪或其他荷载装置:能量不小于50kN,能调节贯人 速度至每分钟贯入lmm,可采用测力计式，如图所。
7）报告
1） 材料的颗粒组成，最佳含水量（ %）和最大干密度（ g/cm3）。
2） 材料的承载比（ %），承载比小于 100，准确到5%；承载 比大于100，准确到10%。
3）材料的膨胀量（%）。
土基现场（ CBR）值测试
一．目的与适用范围
1． 适用于在公路现场测定各种土基材料的现场CBR值。同时 也适合于基层、底基层基层、砂性土、天然砂砾、级配碎石等 材料CBR值的试验。 2．本方法所用式样的最大集料粒径宜小于19mm，最大不得超 过31.5mm，也不适用于大粒径的土石混填或填石路基。
注:用千斤顶连续加载，两个贯入量百分表及测力计均应在同一时 刻读数，当两个百分表读数不超过平均值得30%时，以平均值作 为贯入量，当两个表读数差值超过平均值得30%时，应停止试验 。
（4）卸除荷载，移去测定装置。 （5）卸载后在测点取样，测定材料含水量。 （6）在紧靠试验点旁边的适当位置，用灌沙法或环刀法等测定 土基的密度。
式中 ? d—试件的干密度， g/cm 3； w—试件的含水量， % ；
5）泡水后试件的吸水量按下式计算： w0 ? m3 ? m2
式中 w0—泡水后试件的吸水量， g； m3—泡水后试筒和试件的合质量， g； m2—试筒和试件的合质量， g。
6）精度要求
根据3个平行试验结果计算得的承载比变异系数 CV>12%， 则去掉一个偏离大的值，取其余 2个结果的平均值。如 CV<12%， 且3个平行试验结果计算的干密度偏差小于 0.03g/cm3，则取 3个 结果的平均值。如 3个试验结果计算的干密度偏差超过 0.03g/cm3 ，则去掉一个偏离大的值，取其2个结果的平均值。