SCP20C60中文资料
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On-State Current [A]
Fig 1. Gate Characteristics
101
V (5V) GM
PG(AV)(1W)
100 25oC
PGM(20W)
VGD(0.2V)
10-1
10-1
100
101
102
103
104
105
Gate Current [mA]
Fig 3. Typical Forward Voltage
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SemiWell Semiconductor
SCP20C60
Silicon Controlled Rectifiers
Symbol
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Non-isolated Type
I
1.25
J
2.4
K
5.0
L
2.2
M
1.25
N
0.45
O
0.6
φ
3.6
Max. 10.1 6.7 9.47 13.3 1.4
3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0
Min. 0.382 0.248 0.354 0.504 0.047
0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement.
─
─
1.1 °C/W
─
─
60 °C/W
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Gate Voltage [V]
General Description
Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average On-State Current [A]
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SCP20C60
TO-220 Package Dimension
Dim.
mm
Min.
Typ.
A
9.7
B
6.3
C
9.0
D
12.8
E
1.2
F
1.7
G
2.5
H
3.0
Fig 4. Thermal Response
10
1
0.1
0.01
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
Time (sec)
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
10
IGT(toC) IGT(25oC)
O
5/5
1
1
0.1 -50
0
50
100
150
Junction Temperature[oC]
0.1 -50
0
50
100
150
Junction Temperature[oC]
3/5
VGT(toC) VGT(25oC)
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IH(toC) IH(25oC) Max. Average Power Dissipation [W]
Transient Thermal Impedance [ oC/W]
SCP20C60
Fig 2. Maximum Case Temperature
140
120
θ = 180o
100
80
π
2π
θ
360° 60
θ : Conduction Angl e
40
0
2
4
6
8
10
12
14
16
18
Average On-State Current [A]
t = 8.3ms
di/dt
Critical rate of rise of on-state current
PGM PG(AV) IFGM VRGM
TJ TSTG
Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
103
102 125oC
101
25oC
100
0.5
1.0
1.5
2.0
2.5
3.0
On-State Voltage [V]
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
IGM(5A) Max. Allowable Case Temperature [ oC]
Ratings
600 13 20
220
242 50 20 1 5 5.0 - 40 ~ 125 - 40 ~ 150
Units
V A A
A
A2s
A/㎲
W W A V °C °C
Aug, 2003. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Inch Typ.
0.067 0.098
0.142
Max. 0.398 0.264 0.373 0.524 0.055
0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039
E B
F C
A
H
I
C1.0
G
L
1
D
2
3
J
N
K
φ
M
1. Cathode 2. Anode 3. Gate
I2t
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing
Half Sine Wave : TC = 102 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive
SCP20C60
Fig 7. Typical Holding Current
10
1
0.1 -50
0
50
100
150
Junction Temperature[oC]
Fig 8. Power Dissipation
20
18
θ = 180o
16
θ = 120o
14
θ = 90o
θ = 30o
θ = 60o
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SCP20C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings Unit
Min. Typ. Max.
IDRM
Repetitive Peak Off-State Current
Voltage
Gate open
TJ IH
Holding Current
IT = 100mA, Gate Open
TC = 25 °C
─
─
20
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient
V
─
15
mA
VGT
Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C
─
─
1.5
V
VGD
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2
─
─
V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
