当前位置：文档之家 › DTS3407品牌授权规格书

DTS3407品牌授权规格书

  • 格式：pdf
  • 大小：469.50 KB
  • 文档页数：10

• TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS
• • • • Load Switch Notebook Adaptor Switch DC/DC Converter Power Management
(SOT-23)
G
1 3 D
S
2
Top View
DTS3407
P-Channel 30 V (D-S) MOSFET
FEATURES MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) () Max. 0.046 at VGS = - 10 V - 30 0.051 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 - 4.4 - 3.9 6.9 nC Qg (Typ.)
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2
30
1.82
20
ID = 250 μA 1.46
1
DTS3407
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
a
705 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 5 A VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A f = 1 MHz VDD = - 15 V, RL = 5 ID = - 3 A, VGEN = - 10 V, RG = 1 1.7 93 73 14.5 6.9 2.3 2.1 8.3 6 6 19 9 10 VDD = - 15 V, RL = 5 ID = - 3 A, VGEN = - 6 V, RG = 1 9 18 7 TC = 25 °C IS = - 3 A - 0.8 13 IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C 5 7 6 17 12 12 29 18 20 18 27 14 - 1.4 - 20 - 1.2 20 10 ns ns 22 10.4 nC pF
b
Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
VGS = 4.5V, 3A 1.1
4
VDS = 24 V
0.9
Байду номын сангаас
2
0 0 3 6 9 12 15
0.7 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
Min. - 30
Typ.
Max.
Unit V
- 25 3.9 -1 - 2.5 ± 100 -1 - 10 - 20 0.043 0.048 0.051 10 0.046 0.051 0.054
mV/°C V nA µA A S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3.8 A VGS = - 6 V, ID = - 3.3 A VGS = - 4.5 V, ID = - 3 A VDS = - 5 V, ID = - 3.8 A
0.6
TC = 25 °C
10
0.4
5
VGS = 3 V
0.2
TC = 125 °C TC = - 55 °C
0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V)
0 0 0.6 1.2 1.8 2.4 3 VGS - Gate-to-Source Voltage (V)
A V ns nC ns
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range
2
DTS3407
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 VGS = 10 V thru 5 V VGS = 4.5 V
0.8 1
ID - Drain Current (A)
15
VGS = 4 V
ID - Drain Current (A)
°C
THERMAL RESISTANCE RATINGS
Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W
10
ID = 3.8 A VGS - Gate-to-Source Voltage (V) 1.5
Capacitance
VGS = 10 V, 3.8 A; 6 V, 3.3 A VDS = 8 V RDS(on) - On-Resistance (Normalized) 1.3
8
6
VDS = 15 V
380
190 Coss Crss
0.00 0 5 10 ID - Drain Current (A) 15 20

合集下载

安徽伟仪科技有限公司产品选型手册说明书

安徽伟仪科技有限公司产品选型手册说明书

安徽伟仪科技有限公司Anhui WEYII Science And Technology Co.,L TD.产品选型手册PRODUCT SELECTION GUIDE安徽伟仪科技有限公司Anhui WEYII Science And Technology Co.,L TD.地址（ADD）：安徽省合肥市高新区创新大道2700号电话（TEL）：400-997-0788 专注于气密检漏仪与气密检测设备专心 专注 专业专注于气密检漏仪与气密检测设备专心 专注 专业感谢以下品牌的长期支持与合作！安徽伟仪科技有限公司位于合肥市国家高新技术产业开发区，是一家专业从事气密检漏仪、气密检测设备、流体控制与气动技术领域的研发、生产与服务的高新技术企业。

Anhui Weiyi Technology Co., Ltd. is located in Hefei National High-tech Industrial Development Zone. Weiyi is a high-tech manufacturer specializing in R &D and service of air tightness detector, air tightness detection related equipment, fluid control and pneumatic technology.Since the establishment, We has always adhered to the management principle of talent oriented and core technology centered.Weiyi has gathered a large number of elites in the industry as technical backbones relying on the resources of China University of science and technology, Hefei University of Technolo-gy and other scientific research institutes. The advanced detection technology and design in China and abroad is combined with Weiyi's innovation also the requirement of customers. More professional solutions could provided based on this. We believe continuous improvement of product quality keeps its core competitiveness in the fierce market competition.We always strive for continuous innovation and excellence. We aim to win customers' trust with perfect products and high-quality services. We are concen-trating on being the first choice within international market.公司自成立以来，始终坚持以人才为本、核心技术为中心的经营原则，同时依托中科大、合工大及科研院所为资源，汇聚大量业内精英作为技术骨干，将国内外先进的检测技术、设计思路与伟仪的创新理念及用户的实际需求相结合，为客户提供更专业的解决方案，完善产品质量，使其在激烈的市场竞争中保持核心竞争力。

AO3407 PDF规格书

AO3407 PDF规格书


1000
800
C iss
600
400
C oss
200
C rss
0
0
5
10
15
20
25
30
-VDS (Volts) Figure 8: Capacitance Characteristics
40 T J(Max)=150°C T A =25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Z θJA Normalized Transient Thermal Resistance
PD 0.1
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
T on T
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Symbol VDSS
IDSS
IGSS VGS(th)
RDS(On)
ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd td(on)
tr ห้องสมุดไป่ตู้d(off)
tf trr Qrr IS VSD
Test Conditions
Min Typ Max Unit
ID=-250μA, VGS=0V
7
nC
3.1
8.6
5
VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω
28.2
感温光纤主机DTS用户手册

感温光纤主机DTS用户手册

注意：注意被用来给出辅助信息。
客户支持 为了使我们所有的用户，都可享受产品的支持和服务，当你需要更多的信息
或支持，请拨打华魏公司技术服务电话：+8621 5396 0211，或发送 Email 至华魏 公司邮箱：boomjsb@。为尽快响应你的请求，请附带下述信息：
· 你公司的名字和地址； · 你的电话和传真号码； · 联系人姓名和 E-mail 地址； · 在 DTS 后面板设备铭牌上的 DTS 类型和序列号； · 软件版本号； · 故障描述。
4.1.1 DTS 壁挂式的安装.......................................................................................................... 11 4.1.2 传感光缆的安装 ............................................................................................................ 12 4.2 系统调试 ............................................................................................................................... 14 4.2.1 配置文件设置 ................................................................................................................ 15 4.2.2 软件的操作步骤 ............................................................................................................. 23 第五章 维护和保养 ........................................................................................................................ 25 第六章 注意事项 ............................................................................................................................ 27
沃陆VL1000变频器说明书 版本1.02

沃陆VL1000变频器说明书 版本1.02

感谢您选用沃陆变频器！同时，你将享受到我们为您提供的全面、真诚的服务！VL1000 系列变频器是我公司自主研发的第二代高性能矢量控制变频器，其采用了全新的设计理念和模块化的设计思想。

和传统的矢量变频器相比较，无论在性能、功能、可靠性、可维护性及可使用性等方面，均有本质的提升。

其具体表述为：强大的控制平台VL1000 系列变频器控制核心基于32 位的R ISC 单片机，其运算速度达到了惊人的1.3DMIPS，高效完成复杂的电机控制算法，能实现真正的实时控制，领先的控制算法，丰富的硬件外设极大提高系统的集成度和可靠性。

在电机核心控制层，VL1000 创新性的将矢量控制和VF 控制技术完美结合，引入磁通控制的思想，即使在V F 控制模式下也能达到良好的电机控制效果，同时对电机参数变化不敏感，极大的提高了系统控制的鲁莽性。

矢量控制方面，采用了经典的基于转子磁场定向原理的矢量控制技术，基于磁通观测器原理，在转子磁链方向上对电机的磁通电流与转矩电流进行解耦，并分别加以控制。

采用了速度自适应观测器（MARS）对转子速度全程进行检测。

开放式的硬件架构VL1000 系列变频器提供了具有强大扩展能力的S PI 接口，开放式的标准M ODBUS 协议，客户可在此基础上以扩展卡的形式实现任意的行业专用功能，而无需更改主机的硬件或软件设计，极大的方便了客户的二次开发。

强悍的功能VL1000 系列变频器功能的强悍不仅仅体现在功能的丰富，更多的体现在对传统功能的优化和创新设计，同时引领行业化设计的潮流，在以下功能设计上均采用了诸多创新设计。

智能节电功能，最大限度的减小电机运行的能量消耗。

智能化的电机转速追踪技术，能以较快的速度追踪电机当前转速并实施快速跟踪运行。

多种过调制运行模式，在输入电压不足的情况下，基速以上能极大的提升输出基波电压，从而改善输出转矩。

多种菜单模式，方便了用户的参数调节，方便客户使用。

参数拷贝功能，极大的方便用户使用。