CCD47-20 AIMO

Micro830、Micro850 和 Micro870可编程控制器Micro810 控制器产品目录号 2080-LC10-12AWA、2080-LC10-12QWB、2080-LC10-12DWD、2080-LC10-12QBBMicro820 控制器产品目录号 2080-LC20-20AWB、2080-LC20-20AWBR、2080-LC20-20QWB、2080-LC20-20QWBR、2080-LC20-20QBB、2080-LC20-20QBBRMicro830 控制器产品目录号 2080-LC30-10QWB、2080-LC30-10QVB、2080-LC30-16AWB、2080-LC30-16QWB、2080-LC30-16QVB、2080-LC30-24QWB、2080-LC30-24QVB、2080-LC30-24QBB、2080-LC30-48AWB、2080-LC30-48QWB、2080-LC30-48QVB、2080-LC30-48QBBMicro850 控制器产品目录号 2080-LC50-24AWB、2080-L50E-24AWB、2080-LC50-24QWB、2080-L50E-24QWB、2080-LC50-24QVB、2080-L50E-24QVB、2080-LC50-24QBB、2080-L50E-24QBB、2080-LC50-48AWB、2080-L50E-48AWB、2080-LC50-48QWB、2080-L50E-48QWB、2080-LC50-48QWBK、2080-L50E-48QWBK、2080-LC50-48QVB、2080-L50E-48QVB、2080-LC50-48QBB、2080-L50E-48QBBMicro870 控制器产品目录号 2080-LC70-24AWB、2080-L70E-24AWB、2080-LC70-24QWB、2080-L70E-24QWB、2080-LC70-24QWBK、2080-L70E-24QWBK、2080-L70E-24QWBN、2080-LC70-24QBB、2080-L70E-24QBB、2080-LC70-24QBBK、2080-L70E-24QBBK、2080-L70E-24QBBN2罗克⻙尔⾃动化出版物2080-UM002M-ZH-E - 2022 年4 月Micro830、Micro850 和 Micro870 可编程控制器⽤⼾⼿册重要⽤⼾须知在安装、配置、操作或维护本产品之前，请阅读本文档以及“其他资源”章节所列的文档，了解关于安装、配置和操作该设备的信息。

FEATURES*1024by 1024Image Format *Image Area 13.3x 13.3mm *Full-Frame Operation *13m m Square Pixels*Symmetrical Anti-static Gate Protection *Very Low Noise Output Amplifiers *Gated Dump Drain on Output Register *100%Active Area*Advanced Inverted Mode Operation (AIMO)*New Compact Footprint PackageAPPLICATIONS*Spectroscopy *Scientific Imaging *Star Tracking *Medical ImagingINTRODUCTIONThis version of the CCD47family of sensors has full-framearchitecture.Extremely low noise amplifiers make this device well suited to the most demanding scientific applications.To improve the sensitivity further,the CCD is manufactured without anti-blooming structures.This device has a single serial output register.Separate charge detection circuits are incorporated at each end of the register,which is split so that a line of charge can be transferred to either output,or split between the two.The register is provided with a drain and control gate along the outer edge of the channel for charge dump purposes.The sensor is made using e2v technologies’Advanced Inverted Mode process to minimise dark current,allowing the device to be operated with extended integration periods and minimal cooling.Other variants of the CCD47-10available are back illuminated format and non-inverted mode.In common with all e2v technologies CCD Sensors,the CCD47-10is also available with a fibre-optic window or taper,or with a phosphor coating.Designers are advised to consult e2v technologies should they be considering using CCD sensors in abnormal environments or if they require customised packaging.TYPICAL PERFORMANCEMaximum readout frequency .....5MHz Output responsivity ........ 4.5m V/e 7Peak signal ...........100ke 7/pixel Dynamic range (at 20kHz)...*50000:1Spectral range .......400–1100nmReadout noise (at 20kHz)...... 2.0e 7rms QE at 700nm ..........45%GENERAL DATAFormatImage area .........13.3x 13.3mm Active pixels (H)........1024(V)........1024Pixel size ..........13x 13m m Additional pixels are provided in the image area for dark reference and over-scanning purposes.Number of output amplifiers . (2)Weight (approx,no window).....6gPackagePackage size ...........22.6x 29.9mm Number of pins ..............24Inter-pin spacing ........... 2.54mm Window material ......quartz or removable glass Type ............ceramic DILarrayCCD47-10AIMO Compact Pack High Performance CCDSensor#e2v technologies (uk)limited 2006A1A-100030Issue 5,March 2006411/9572e2v technologies (uk)limited,Waterhouse Lane,Chelmsford,Essex CM12QU,UK Telephone:+44(0)1245493493Facsimile:+44(0)1245492492e-mail:enquiries@ Internet: Holding Company:e2v technologies plc e2v technologies inc.4Westchester Plaza,PO Box 1482,Elmsford,NY10523-1482USA Telephone:(914)592-6050Facsimile:(914)592-5148e-mail:enquiries@NOTES1.Signal level at which resolution begins to degrade.2.Measured between 253and 293K and V SS +9.5V.Dark signal at any temperature T (kelvin)may be estimated from:Q d /Q d0=1.14x 106T 3e 79080/Twhere Q d0is the dark signal at T =293K (208C).3.Test carried out at e2v technologies on all sensors.4.Dynamic range is the ratio of full-well capacity to readout noise measured at 253K and 20kHz readout speed.D characterisation measurements made using charge generated by X-ray photons of known energy.6.Measured using a dual-slope integrator technique (i.e.correlated double sampling)with a 20m s integration period.7.Readout at speeds in excess of 5MHz into a 15pF load can be achieved but performance to the parameters given cannot be guaranteed.8.Measured between 253and 293K,excluding white defects.PERFORMANCEMinTypical Max Peak charge storage (see note 1)60k 100k –e 7/pixelPeak output voltage (no binning)–450–mVDark signal at 293K (see notes 2and 3)–100200e 7/pixel/sDynamic range (see note 4)–50000–Charge transfer efficiency (see note 5):parallel serial––99.999999.9993––%%Output amplifier responsivity (see note 3) 3.0 4.5 6.0m V/e 7Readout noise at 253K (see notes 3and 6)– 2.0 4.0rms e 7/pixelMaximum readout frequency (see note 7)– 5.0–MHz Dark signal non-uniformity at 293K (std.deviation)(see notes 3and 8)–4080e 7/pixel/s Response non-uniformity (std.deviation)–13%of meanELECTRICAL INTERFACE CHARACTERISTICSElectrode capacitances (measured at mid-clock level)MinTypical Max I 1/I 1interphase – 3.5–nF I 1/SS– 4.5–nF R 1/R 1interphase –40–pF R 1/(SS+DG+OD)–60–pF 1R/SS–10–pF Output impedance (at typ.operating condition)–300–O100030,page 2#e2v technologiesBLEMISH SPECIFICATIONTraps Pixels where charge is temporarily held.Traps are counted if they have a capacitygreater than200e7at253K.Slipped columns Are counted if they have an amplitudegreater than200e7.Black spots Are counted when they have a signal levelof less than90%of the local mean at asignal level of approximately half full-well.White spots Are counted when they have a generationrate125times the specified maximum darksignal generation rate(measured between253and293K).The typical temperaturedependence of white spot defects is dif-ferent from that of the average dark signaland is given by:Q d/Q d0=122T3e76400/TWhite column A column which contains at least21whitedefects.Black column A column which contains at least21blackdefects.Grade5Devices which are fully functioning,withimage quality below that of grade2,andwhich may not meet all other performanceparameters.Minimum separation betweenadjacent black columns........50pixelsNote The effect of temperature on defects is that traps will beobserved less at higher temperatures but more may appearbelow253K.The amplitude of white spots and columns willdecrease rapidly with temperature.#e2v technologies100030,page3010203040506040050060070080090010001100Q U A N T U M E F F I C I E N C Y (%)WAVELENGTH (nm)7128TYPICAL OUTPUT CIRCUIT NOISE(Measured using clamp and sample)V SS =9.5V V RD =17V V OD =29VTYPICAL SPECTRAL RESPONSE (At 7208C,no window)TYPICAL VARIATION OF DARK SIGNAL WITH SUBSTRATE VOLTAGE10610510410310210D A R K S I G N A L A T 293K (e 7/p i x e l /s )SUBSTRATE VOLTAGE V SS (V)100030,page 4#e2v technologies76543210N O I S E E Q U I V A L E N T S I G N A L (e 7r m s )FREQUENCY (Hz)1072107310741071110102103D A R K S I G N A L (e 7/p i x e l /s )PACKAGE TEMPERATURE (8C)780760740720020407750TYPICAL VARIATION OF DARK SIGNAL WITH TEMPERATURE (V SS =+9.5V)DEVICE SCHEMATICNote Pins 6and 19are not connected.For convenience,the CCD47-10Compact Pack is pin compatible with the e2v technologies CCD57sensors in the compact pack,except that OSL =pin 6,OSR =pin 19and pins 12and 13are not connected in the CCD57.123456789101112131415161718192021222324ABD I 13I 12I 11OGSS 1R R 12LR 11L OD OSL OSRRDR 11R R 12R R 13SS DG I 11I 12I 13ABG7905#e2v technologies 100030,page 5CONNECTIONS,TYPICAL VOLTAGES AND ABSOLUTE MAXIMUM RATINGSMaximum voltages between pairs of pins:pin12(OSL)to pin11(OD).......+15Vpin13(OSR)to pin11(OD).......+15VMaximum output transistor current......10mANOTES9.Readout register clock pulse low levels+1V;other clock low levels0+0.5V.10.Drain not incorporated,but bias is still necessary.11.3to5V below OD.Connect to ground using a3to5mA current source or appropriate load resistor(typically5to10k O).12.Non-charge dumping level shown.For operation in charge dumping mode,DG should be pulsed to12+2V.13.All devices will operate at the typical values given.However,some adjustment within the minimum to maximum range may berequired to optimise performance for critical applications.It should be noted that conditions for optimum performance may differ from device to device.14.With the R1connections shown,the device will operate through the left-hand output only.In order to operate from bothoutputs R11(R)and R12(R)should be reversed.100030,page6#e2v technologiesII I FRAME READOUT TIMING DIAGRAMDETAIL OF LINE TRANSFER(For output from a single amplifier)#e2v technologies 100030,page7I 11I 12I 13R 11R 12R 131ROUTPUTI11I12I13R11R12R131RDG7764END OF PREVIOUS LINE READOUT LINETRANSFERINTOREGISTERDUMP SINGLE LINEFROM REGISTER TODUMP DRAINLINETRANSFERINTOREGISTERSTART OFLINEREADOUTDETAIL OF VERTICAL LINE TRANSFER(Single line dump)DETAIL OF VERTICAL LINE TRANSFER(Multiple line dump)I11I12I13R11R12R131RDG7765END OF PREVIOUS LINE READOUT1ST LINE2ND LINE3RD LINE CLEARREADOUTREGISTERDUMP MULTIPLE LINE FROM REGISTERTO DUMP DRAINLINETRANSFERINTOREGISTERSTART OFLINEREADOUT100030,page8#e2v technologiesR 11R 12R 131ROS7133ADETAIL OF OUTPUT CLOCKINGLINE OUTPUT FORMATCLOCK TIMING REQUIREMENTSSymbol DescriptionMin Typical Max T i Image clock period414see note 15m s t wi Image clock pulse width25see note 15m s t ri Image clock pulse rise time (10to 90%)0.15T i 72t wi m s t fi Image clock pulse fall time (10to 90%)t rit ri T i 72t wi m s t oi Image clock pulse overlap(t ri +t fi )/20.6(3t wi 7T i )/2m s t dir Delay time,I 1stop to R 1start 12see note 15m s t dri Delay time,R 1stop to I 1start 11see note 15m s T r Output register clock cycle period 2001000see note 15ns t rr Clock pulse rise time (10to 90%)500.1T r 0.3T r ns t fr Clock pulse fall time (10to 90%)t rr 0.1T r 0.3T r ns t or Clock pulse overlap 200.5t rr 0.1T r ns t wx Reset pulse width300.1T r 0.3T r ns t rx ,t fx Reset pulse rise and fall times 0.2t wx 0.5t rr 0.1T r ns t dxDelay time,1R low to R 13low300.5T r0.8T rnsNOTES15.No maximum other than that necessary to achieve an acceptable dark signalat the longer readout times.=Partially shielded transition elements #e2v technologies 100030,page 9I 12(SEE SS SS 0V7766AOUTPUT CIRCUITNOTES16.The amplifier has a DC restoration circuit which isinternally activated whenever I 12is high.17.Not critical;can be a 3to 5mA constant current supply oran appropriate load resistor.100030,page 10#e2v technologiesOUTLINE(All dimensions without limits are nominal)C22.86+0.25D 2.70+0.27E 1.65+0.25F 5.6+0.5G0.46+0.05H 2.54+0.13J27.94+0.13K 1.0+0.3L0.2#e2v technologies100030,page11ORDERING INFORMATIONOptions include:*Temporary Quartz Window *Permanent Quartz Window *Temporary Glass Window *Permanent Glass Window *Fibre-optic Coupling *UV Coating*X-ray Phosphor CoatingFor further information on the performance of these and other options,please contact e2v technologies.HANDLING CCD SENSORSCCD sensors,in common with most high performance MOS IC devices,are static sensitive.In certain cases a discharge of static electricity may destroy or irreversibly degrade the device.Accordingly,full antistatic handling precautions should be taken whenever using a CCD sensor or module.These include:*Working at a fully grounded workbench *Operator wearing a grounded wrist strap*All receiving socket pins to be positively grounded *Unattended CCDs should not be left out of their conducting foam or socket.Evidence of incorrect handling will invalidate the warranty.All devices are provided with internal protection circuits to the gate electrodes (pins 2,3,4,5,8,9,10,15,16,17,20,21,22,23,24)but not to the other pins.HIGH ENERGY RADIATIONDevice characteristics will change when subject to ionising radiation.Users planning to operate CCDs in high radiation environments are advised to contact e2v technologies.TEMPERATURE LIMITSMinTypicalMaxStorage .......73–373K Operating ......73273323K Operation or storage in humid conditions may give rise to ice on the sensor surface on cooling,causing irreversible damage.Maximum device heating/cooling .....5K/minPrinted in England 100030,page 12#e2v technologiesWhilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice.e2v technologies accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.。

A6:免疫荧光分析仪A6.1首页内容XX医院检验科操作规程文件号：XXXX第1版共5页20XX年X月X日起实施本规程每2年复审一次复审日期：20XX年XX月XX日复审人：XXX(签名)规程编写者：XXX，XXX审批者：XXX批准日期：200X年X月X日文件分发部门和/或个人：医务科：保管者：XXX(签名)院长办公室：保管者：XXX(签名) 院档案室：保管者：XXX(签名) 检验科：主任：XXX(签名)检验科XXX检验室：XXX(签名)A6.2检测原理i-CHROMA Reader免疫荧光分析仪由韩国BodiTech Med Inc 生产制造，是一种便携式的、用于分析血液和尿液中各种被分析物浓度的荧光定量快速测定仪，该系统仅用于体外诊断。

i-CHROMA Reader免疫荧光分析仪是一种可用于医疗机构的中心实验室、门/急诊化验室、临床科室和其它医疗服务点（如：社区医疗点）、体检中心的快速定量检测系统，i-CHROMA Reader免疫荧光分析仪使用激光作为激发光源，在检测中荧光染料的发射光被收集并被转化为电信号，电信号的强弱和代表荧光染料分子的斑点的数量严格相关。

当经缓冲稀释后的检测样本加入到检测板后，检测板被插入i-CHROMA Reader免疫荧光分析仪中，被分析物的浓度通过一个预编程的定标过程被检测出来。

A6.3标准配置A6.4初始化安装要求A6.4.1电源要求: i-CHROMA Reader免疫荧光分析仪可以工作在家用电源下，即110-120V或220-240V交流电，50-60Hz。

如果对电源不确定，请向相关人员咨询。

A6.4.2 放置: i-CHROMA Reader免疫荧光分析仪应该放置在干燥、清洁、平坦的水平表面，避免阳光直射和其他电磁辐射源（例如：变电器）。

第一次启动i-CHROMA Reader免疫荧光分析仪时，先将仪器从包装盒中取出，根据装箱列表核对仪器组件是否有缺失或物理损坏。