2SA1012-X-TA3-T中文资料(Unisonic Technologies)中文数据手册「EasyDatasheet - 矽搜」

UNISONIC TECHNOLOGIES CO., LTD2N60 Power MOSFET2 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* R DS(ON) = 3.8Ω@V GS = 10V.* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 2N60LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube 2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube 2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube 2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel 2N60-TN3-T 2N60L-TN3-T TO-252 G D S TubeNote: Pin Assignment: G: Gate D: Drain S: SourceABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 2.0 AT C = 25°C 2.0 ADrain Current ContinuousT C = 100°C I D 1.26 ADrain Current Pulsed (Note 2) I DP 8.0 ARepetitive(Note 2) E AR 4.5 mJAvalanche EnergySingle Pulse(Note 3) E AS 140 mJPeak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/nsT C = 25°C 45 WTotal Power Dissipation Derate above 25°C P D0.36 W/Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, I AS =2.0A, V DD =50V, R G =25 Ω, Starting T J = 25°C 4. I SD ≤ 2.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°CTHERMAL DATAPARAMETER PACKAGE SYMBOL RATINGS UNITTO-251 112 TO-252 112TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA54TO-251 12 TO-252 12TO-220 4 Thermal Resistance Junction-Case TO-220F θJc4/WELECTRICAL CHARACTERISTICS (T J =25℃, unless Otherwise specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 600 VV DS = 600V, V GS = 0V 10 µAZero Gate Voltage Drain Current I DSSV DS = 480V, T C = 125°C100µA Forward V GS = 30V, V DS = 0V 100nAGate-Body Leakage Current Reverse I GSSV GS = -30V, V DS = 0V-100nA Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 250 µA 0.4 V/On Characteristics Gate Threshold Voltage V GS(TH)V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON)V GS = 10V, I D =1A 3.8 5 Ω Forward Transconductance g FS V DS = 50V, I D = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance C ISS 270 350pFOutput Capacitance C OSS 40 50 pFReverse Transfer Capacitance C RSS V DS =25V, V GS =0V, f =1MHz 5 7 pFELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSwitching Characteristics Turn-On Delay Time t D (ON) 10 30 ns Rise Time t R 25 60 ns Turn-Off Delay Time t D(OFF) 20 50 nsFall Time t FV DD =300V, I D =2.4A, R G =25Ω(Note 1,2) 25 60 ns Total Gate Charge Q G 9.0 11 nCGate-Source Charge Q GS 1.6 nCGate-Drain Charge Q GDV DS =480V, V GS =10V, I D =2.4A(Note 1, 2)4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 2.0 A 1.4V Continuous Drain-Source Current I SD 2.0 A Pulsed Drain-Source Current I SM 8.0 AReverse Recovery Time t RR 180 nsReverse Recovery Charge Q RR V GS = 0 V, I SD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%2. Essentially Independent of Operating TemperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS10010101010-1100Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )10102Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics46810On-Region Characteristics0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) ()Drain Current , I D (A)122481012On-Resistance Variation vs . Drain Current andGate Voltage634560.2Source-Drain Voltage , V SD (V)Body Diode Forward Voltage Variation vs.Source Current and Temperature 1.60.40.60.8 1.0 1.2 1.4500010Drain -Source Voltage, V DS (V)C a p a c i t a n c e (p F )Capacitance vs. Drain-Source Voltage4001001001013002000G a t e -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)261081012Gate Charge vs. Gate Charge Voltage46408TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d ow n V o l t a g e , V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage vs . Temperature 0-100D r a i n -S o u r c e O n -R e s i st a n c e , R D S (O N ) (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150On-Resistance vs . Temperature101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )Max. Safe Operating Area 1010101010D r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)75100150Max. Drain Current vs. Case Temperature 0.012550250.51.01.52.0Square Wave Pulse Duration , t1(s)T h e r m a l R e s p o n s e , J C (t )Thermal Response101010101010101010。