2N5804中文资料

Collector-emitter cutoff current (Base open) Forward current transfer ratio
vi
si
VCE = −2V, IC = − 0.1 A VCE = −2 V, IC = −5 V IC = −5 A, IB = − 0.25 A IC = −5 A, IB = − 0.25 A IC = −4 A
at io n.
Max −100 −100 230 −1.2 −1.7 0.5 0.15 1.0
Unit V µA µA V V µs µs µs
Publication date: January 2003
SJD00009CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching
at io n.
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

13
Figure 12. Representative Schematic Diagrams
1/8 ULN2803
2.7 k 7.2 k 3.0 k Pin 10 10.5 k 7.2 k 3.0 k
1/8 ULN2804
Pin 10
4
MOTOROLA ANALOG IC DEVICE DATA
元器件交易网
Figure 2.
Open h FE
+ IC
I
in
µA Open DUT ICEX Vin DUT IC V VCE
Figure 3.
Open VCE
Figure 4.
Open
µA Iin Vin µA µA Vin DUT
DUT
Open
Figure 5.
Open
Figure 6.
VR
µA IR DUT IC Vin V VCE V Open
2
MOTOROLA ANALOG IC DEVICE DATA
元器件交易网
ULN2803 ULN2804
TEST FIGURES
(See Figure Numbers in Electrical Characteristics Table)
Figure 1.
Open VCE
ULN2803 ULN2804
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Output Leakage Current (Figure 1) (VO = 50 V, TA = +70°C) (VO = 50 V, TA = +25°C) (VO = 50 V, TA = +70°C, VI = 6.0 V) (VO = 50 V, TA = +70°C, VI = 1.0 V) Collector–Emitter Saturation Voltage (Figure 2) (IC = 350 mA, IB = 500 µA) (IC = 200 mA, IB = 350 µA) (IC = 100 mA, IB = 250 µA) Input Current – On Condition (Figure 4) (VI = 17 V) (VI = 3.85 V) (VI = 5.0 V) (VI = 12 V) Input Voltage – On Condition (Figure 5) (VCE = 2.0 V, IC = 300 mA) (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) (VCE = 2.0 V, IC = 125 mA) (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 275 mA) (VCE = 2.0 V, IC = 350 mA) Input Current – Off Condition (Figure 3) (IC = 500 µA, TA = +70°C) DC Current Gain (Figure 2) (VCE = 2.0 V, IC = 350 mA) Input Capacitance Turn–On Delay Time (50% EI to 50% EO) Turn–Off Delay Time (50% EI to 50% EO) Clamp Diode Leakage Current (Figure 6) (VR = 50 V) Clamp Diode Forward Voltage (Figure 7) (IF = 350 mA) TA = +25°C TA = +70°C All Types All Types ULN2802 ULN2804 VCE(sat) All Types All Types All Types II(on) ULN2802 ULN2803 ULN2804 ULN2804 VI(on) ULN2802 ULN2803 ULN2803 ULN2803 ULN2804 ULN2804 ULN2804 ULN2804 All Types ULN2801 II(off) hFE CI ton toff IR VF – – – – – – – – 50 1000 – – – – – – – – – – – – – 100 – 15 0.25 0.25 – 1.5 13 2.4 2.7 3.0 5.0 6.0 7.0 8.0 – – 25 1.0 1.0 50 100 2.0 µA – pF µs µs µA V – – – – 0.82 0.93 0.35 1.0 1.25 1.35 0.5 1.45 V – – – 1.1 0.95 0.85 1.6 1.3 1.1 mA Symbol ICEX – – – – – – – – 100 50 500 500 V Min Typ Max Unit µA

4.5
2.0
2.5
3.0 3.5 4.0 4.5 5.0 5.5 OPERATING CURRENT lZT (mA)
6.0
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT
10000 5000 10000
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元器件交易网
Backside is not cathode and must be electrically isolated. T = Metallization Test Pad
DESIGN DATA
METALLIZATION: Top: C (Cathode) ...................Al A (Anode) ...................... Al Back: .......................................Au AL THICKNESS.........25,000 Å Min GOLD THICKNESS......4,000 Å Min CHIP THICKNESS. ..............10 Mils CIRCUIT LAYOUT DATA: Backside must be electrically isolated. Backside is not cathode. For Zener operation cathode must be operated positive with respect to anode. TOLERANCES: ALL Dimensions + 2 mils

TL F 64945404 DM5404 DM7404 Hex Inverting GatesJune1989 5404 DM5404 DM7404Hex Inverting GatesGeneral DescriptionThis device contains six independent gates each of whichperforms the logic INVERT functionFeaturesY Alternate Military Aerospace device(5404)is availableContact a National Semiconductor Sales Office Distrib-utor for specificationsConnection DiagramDual-In-Line PackageTL F 6494–1Order Number5404DMQB 5404FMQB DM5404J DM5404W DM7404M or DM7404NSee NS Package Number J14A M14A N14A or W14BFunction TableY e AInputs OutputA YL HH LH e High Logic LevelL e Low Logic LevelC1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Note)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage7V Input Voltage5 5V Operating Free Air Temperature RangeDM54and54b55 C to a125 C DM740 C to a70 C Storage Temperature Range b65 C to a150 C Note The‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaran-teed The device should not be operated at these limits The parametric values defined in the‘‘Electrical Characteristics’’table are not guaranteed at the absolute maximum ratings The‘‘Recommended Operating Conditions’’table will define the conditions for actual device operationRecommended Operating ConditionsSymbol ParameterDM5404DM7404Units Min Nom Max Min Nom MaxV CC Supply Voltage4 555 54 7555 25V V IH High Level Input Voltage22V V IL Low Level Input Voltage0 80 8V I OH High Level Output Current b0 4b0 4mA I OL Low Level Output Current1616mA T A Free Air Operating Temperature b55125070 C Electrical Characteristicsover recommended operating free air temperature range(unless otherwise noted)Symbol Parameter Conditions MinTypMax Units (Note1)V I Input Clamp Voltage V CC e Min I I e b12mA b1 5VV OH High Level Output V CC e Min I OH e Max2 43 4VVoltage V IL e MaxV OL Low Level Output V CC e Min I OL e Max0 20 4VVoltage V IH e MinI I Input Current Max V CC e Max V I e5 5V1mA Input VoltageI IH High Level Input Current V CC e Max V I e2 4V40m AI IL Low Level Input Current V CC e Max V I e0 4V b1 6mAI OS Short Circuit V CC e Max DM54b20b55mA Output Current(Note2)DM74b18b55I CCH Supply Current with V CC e Max612mA Outputs HighI CCL Supply Current with V CC e Max1833mA Outputs LowSwitching Characteristics at V CC e5V and T A e25 C(See Section1for Test Waveforms and Output Load) Symbol Parameter Conditions Min Max Unitst PLH Propagation Delay Time C L e15pF22ns Low to High Level Output R L e400Xt PHL Propagation Delay Time15ns High to Low Level OutputNote1 All typicals are at V CC e5V T A e25 CNote2 Not more than one output should be shorted at a time23Physical Dimensions inches(millimeters)14-Lead Ceramic Dual-In-Line Package(J)Order Number5404DMQB or DM5404JNS Package Number J14A4Physical Dimensions inches(millimeters)(Continued)14-Lead Small Outline Molded Package(M)Order Number DM7404MNS Package Number M14A14-Lead Molded Dual-In-Line Package(N)Order Number DM7404NNS Package Number N14A55404 D M 5404 D M 7404H e x I n v e r t i n g G a t e sPhysical Dimensions inches (millimeters)(Continued)14-Lead Ceramic Flat Package (W)Order Number 5404FMQB or DM5404WNS Package Number W14BLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。