【NL2022771A】一设备装置光刻器件和方法【专利】

Octrooicentrum Θ 2022771
(21) Aanvraagnummer: 2022771
© Aanvraag ingediend: 20 maart 2019(51) Int. Cl.:G03F 7/20 (2019.01)
(41) Aanvraag ingeschreven:
9 april 2019@ Aanvraag gepubliceerd:
9 april 2019(71) Aanvrager(s):ASML Netherlands B.V. te Veldhoven.© Uitvinder(s):
Pepijn van den Eijnden te Veldhoven.
Erik Henricus Egidius Catharina Eummelen
te Veldhoven.
Robin Bernardus Johannes Koldeweij
te Veldhoven.
Cornelius Maria Rops te Veldhoven.
Petrus Martinus Gerardus Johannes Arts
te Veldhoven.
Nupur Subhedar te Veldhoven.
Johannes Maessen te Veldhoven.
© Gemachtigde:
ir. A.J. Maas te Veldhoven.
(54) A DEVICE, APPARATUS, LITHOGRAPHIC DEVICE AND METHOD
(57) The present invention provides a device for providing substantially laminar fluid flow in a lithographic apparatus.
The device comprises an opening and a channel through which fluid flows to or from the opening, the channel defined within an enclosure formed by at least a first wall and a second wall. The device also comprises a flow laminating portion in the channel configured to provide the substantially laminar fluid flow through the opening. The flow laminating portion may comprise a plurality of pillars, and/or a plurality of sub-channels, and/or a porous layer across the channel.
N L A 2022771Deze publicatie komt overeen met de oorspronkelijk ingediende stukken.
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A DEVICE,APPARATUS,LITHOGRAPHIC DEVICE AND METHOD
FIELD
[0001]The present invention relates to devices for providing substantially laminar fluid flow,a fluid flushing apparatus,a lithographic apparatus and a method of generating at least one of the devices or the fluid flushing apparatus.
BACKGROUND
[0002]A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.A lithographic apparatus can be used,for example,in the manufacture of integrated circuits (ICs).A lithographic apparatus may,for example,project a pattern(also often referred to as“design layout’’or“design”)of a patterning device(e.g.,a mask)onto a layer of radiation-sensitive material (resist)provided on a substrate(e.g.,a wafer).
[0003]As semiconductor manufacturing processes continue to advance,the dimensions of circuit elements have continually been reduced while the amount of functional elements,such as transistors, per device has been steadily increasing over decades,following a trend commonly referred to as
‘Moore’s law’.To keep up with Moore’s law the semiconductor industry is chasing technologies that enable to create increasingly smaller features.To project a pattern on a substrate a lithographic apparatus may use electromagnetic radiation.The wavelength of this radiation determines the minimum size of features which are patterned on the substrate.Typical wavelengths currently in use are365nm(i-line),248nm,193nmand13.5nm.A lithographic apparatus,which uses extreme ultraviolet(EUV)radiation,having a wavelength within a range of4nm to20nm,for example6.7 nm or13.5nm,may be used to form smaller features on a substrate than a lithographic apparatus which uses,for example,radiation with a wavelength of193nm.
[0004]A lithographic apparatus may include an illumination system for providing a projection beam of radiation,and a support structure for supporting a patterning device.The patterning device may serve to impart the projection beam with a pattern in its cross-section.The apparatus may also include a substrate support for holding a substrate,a projection system for projecting the patterned beam onto a target portion of the substrate.
[0005]The projection system usually includes an optical component such as a lens for focusing the beam onto the target portion of the substrate.It is,however,as will be pointed out in slightly more detail further on in the specification,also possible to direct the beam via reflective components such as mirrors.The surfaces of these optical components may interact with gaseous contaminants in such a way that the transmission of light or the reflection of light occurs in a less accurate manner than would be the case had the surfaces of the optical components not interacted with these gaseous contaminants.。