S10M DO-214AB SMC 规格书推荐
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SS52 THRU SS520SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 200 Volts Forward Current - 5.0AmperesFEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSPlastic package has Underwriters Laboratory Flammability Classification 94V-0Metal silicon junction ,majority carrier conduction For surface mount applications Low power loss ,high efficiencyHigh current capability ,Low forward voltage drop Low profile packageBuilt-in strain relief ,ideal for automated placement For use in low voltage ,high frequency inverters,free wheeling ,and polarity protection applicationsHigh temperature soldering guaranteed:260 C/10 seconds at terminalsCase : JEDEC SMC(DO-214AB) molded plastic bodyT erminals : solder plated ,solderable per MIL-STD-750,method 2026Polarity : color band denotes cathode end Weight : 0.007ounce,0.21 gram(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.)Dimensions in inches and (millimeters)SMC(DO-214AB)0.260(6.60)0.305(7.75)Notes : 1.Pulse test: 300 s pulse width,1% duty cycle2. P .C.B. mounted 0.55X0.55"(14X14mm) copper pad areas3.Measured at 1MHz and reverse voltage of4.0 volts10.010.0010.0110.110200.11030609012050101101000.20.40.60.81.01.61.41.2FIG.1-FORWARD CURRENT DERATING CURVEFIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENTFIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICSFIG.4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T ( A M P E R E S )I N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )P E A K F O R W A R D S U R G EC U R R E N T (A MP E R E S )INSTANTANEOUS FORWARD VOLTAGE (VOLTS)REVERSE VOLTAGE. VOLTS T , PULSE DURATION ,sec.PERCENT OF RATED PEAK REVERSE VOLTAGE%NUMBER OF CYCLES AT 60Hz101100.10.10.011101001001000100FIG.5-TYPICAL JUNCTION CAPACITANCEFIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCEJ U N C T I O N C A P A C I T A N C E (p F )T R A N S I E N T T H E R M A L I M P E D A N C E , C / W204060801001201502.03.04.05.01.0A V E R A G E F O R W A R D C U R R E N T A M P E R E SLEAD TEMPERATURE ( C)2SS52 THRU SS520SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 200 Volts Forward Current - 5.0Amperes。
ASEMI SS24(DO-214AC SMA)肖特基二极管规格书
我想用于充电器,可以吗?尺寸是多少呢?详见下解:
ASEMI品牌的SS24是2A 40V的贴片小二极管,属于肖特基封装,SMA超薄封装,小功率的,常用于家用的小功率电器,也常用于充电器,适配器
正向电流:2A
反向耐压:40V
芯片材质:GPP硅芯片
漏电流:0.5uA
操作温度:-40℃~150℃
正向电压:0.55V-0.95V
浪涌电流:30A
芯片尺寸:50mil
引线数量:2个
恢复时间:5ns
包装方式:5000/盘
这个品牌的打标采用的是镭射激光打标,不褪色,黑胶材质,外形黑体部分用环氧塑脂材料,包封稳定性好,引脚是无氧铜材质,导电性能好
常规包装是2000/盘
尺寸如下:
规格书。
DO-214AB封装TVS管SMDJ13A型号硕凯电子(Sylvia)一、产品图二、产品尺寸图三、UL证书编号四、功能原理图五、应用英文TVS devices are ideal for the protection of I/O interfaces,VCC bus and other vulnerable circuits used in Telecom,Computer,Industrial and Consumer electronic applications.六、最大额定值Notes:1.Non-repetitive current pulse,per Fig.3and derated above TA=25°C per Fig.2.2.Mounted on5.0mm x5.0mm(0.03mm thick)Copper Pads to each terminal.3.8.3ms single half sine-wave,or equivalent square wave,Duty cycle=4pulses per minutes maximum.4.VF<3.5V for VBR<200V and VF<6.5V for VBR>201V.七、产品特性1、為表麵安裝應用優化電路板空間2、低泄漏3、單向和雙向單元4、玻璃鈍化結5、低電感6、優良的鉗位能力7、3000W的峰值功率能力在10×1000μ波形重複率(占空比):0.01%8、快速響應時間:從0伏特到最小擊穿電壓通常小於1.0ps9、典型的,在電壓高於12V時,反向漏電流小於5μA10、高溫焊接:終端260°C/40秒11、典型的最大溫度係數△Vbr=0.1%x Vbr@25°C x△T12、塑料包裝有保險商實驗室可燃性94V-013、無鉛鍍霧錫14、無鹵化,符合RoHS15、典型失效模式是在指定的電壓或電流下出現16、晶須測試是基於JEDEC JESD201A每個表4a及4c進行的17、IEC-61000-4-2ESD15kV(空氣),8kV(接觸)18、數據線的ESD保護符合IEC61000-4-2(IEC801-2)19、數據線的EFT保護符合IEC61000-4-4(IEC801-4)八、英文描述The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.九、编带说明十、应用中文TVS器件非常适合保护I/O接口,Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。
SS32 THRU SS36SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERReverse Voltage -20 to 60 Volts Forward Current -3.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ For surface mount applications ♦ Low profile package♦ Built-in strain relief, ideal for automated placement ♦ Easy pick and place ♦ Metal silicon junction, majority carrier conduction♦ Low power loss, high efficiency♦ High current capability, low forward voltage drop♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ High temperature soldering:250°C/10 seconds at terminalsMECHANICAL DATACase:JEDEC DO-214AB molded plastic bodyTerminals:Solder plated, solderable per MIL-STD-750,Method 2026Polarity:Color band denotes cathode end Weight:0.007 ounce 0.25 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS SS32SS33SS34SS35SS36UNITSDevice marking codeS2S3S4S5S6Maximum repetitive peak reverse voltage V RRM 2030405060Volts Maximum RMS voltage V RMS 1421283542Volts Maximum DC blocking voltageV DC 2030405060Volts Maximum average forward rectified current at T L (SEE FIG.1) (NOTE 2)I (AV) 3.0Amps Peak forward surge current8.3ms single half sine-wave superimposed on I FSM100.0Ampsrated load (JEDEC Method)Maximum instantaneous forward voltage at 3.0A(NOTE 1)V F 0.500.75Volts Maximum DC reverse current (NOTE 1)T A =25°C 0.5at rated DC blocking voltage T A =100°C I R 20.010.0mA Typical thermal resistance (NOTE 2)R ΘJA 55.0R ΘJL 17.0°C/WOperating junction temperature range T J -55 to +125-55 to +150°C Storage temperature rangeT STG-55 to +150°CNOTES:(1) Pulse test:300µs pulse width, 1% duty cycle(2) P .C.B.mounted 0.55 x 0.55”(14 x 14mm) copper pad areasDO-214ABDimensions in inches and (millimeters)。