DSEP29-06A;DSEP29-06B;DSEP29-06AS;DSEP29-06AS-TUBE;DSEP29-06BS;中文规格书,Datasheet资料

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100
50
0
100
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr versus -diF/dt
140 ns 120 trr 100
80
TVJ = 100°C VR = 300 V
IF = 60 A IF = 30 A IF = 15 A
60
40
0 200 400 600 A8/0µ0s 1000 -diF/dt
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052 0.0003 0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
DSEP 29-06A
supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable operation
0.1 ZthJC
50
A
TVJ= 100°C VR = 300V
IRM 40
30 IF= 60A IF= 30A IF= 15A
20
10
0 0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM versus -diF/dt
20
Type
DSEP 29-06A DSEP 29-06AS DSEP 29-06B
A
C
Symbol IFRMS IFAVM
IFSM
EAS
IAR TVJ TVJM Tstg Ptot Md Weight
Conditions
Maximum Ratings
rect., d = 0.5; TC (Version A, AS)= 135°C TC (Version B) = 125°C
1.2
V
VFR
15
tfr
VFR
µs tfr
0.9
10
0.6
5
0.3
பைடு நூலகம்
TVJ= 100°C IF = 30A 0
0 200 400
0.0 600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation:
417
IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved
1-3
/
DSEP 29-06A DSEP 29-06AS
Characteristic max. Values Version A Version B
250
250 µA
1
2 mA
1.26 1.61
1.58 V 2.52 V
0.9
0.9 K/W
0.5
0.5 K/W
35
30 ns
6
4A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052 0.0003 0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.0 0
Qr 40
80 120 C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1
K/W
0.1 ZthJC
350 nC TVJ = 100°C 300 VR = 300 V
250 Qr
200
150
IF = 60 A IF = 30 A IF = 15 A
60 V 50 VFR
TVJ = 100°C IF = 30 A
40
0.30 µs 0.2t5fr
0.20
30
0.15
20 VFR
10
tfr 0.10 0.05
0
0.00
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt
Data according to IEC 60747 and per diode unless otherwise specified.
TO-220 AC
C
A
C (TAB)
TO-263
A
C (TAB)
A
A = Anode, C = Cathode, TAB = Cathode
Features
International standard package • Planar passivated chips • Very short recovery time l Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0
2500
Qr
2000
1500 1000
IF= 60A IF= 30A IF= 15A
500
0
100
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr versus -diF/dt
130 ns 120 trr 110
100
TVJ= 100°C VR = 300V
s
1
t
IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved
NOTE: Fig. 2 to Fig. 6 shows typical values
0.1
DSEP 30-06B
s
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved
Fig. 5 Recovery time trr versus -diF/dt
10 A IRM 8
6
IF = 60 A IF = 30 A IF = 15 A
4 TVJ = 100°C
VR = 300 V 2
0 0 200 400 600 A80/µ0s 1000 -diF/dt
Fig. 3 Peak reverse current IRM versus -diF/dt
70 A 60
IF 50 40 30
TVJ=150°C T =100°C
VJ
20
10 TVJ=25°C
0 0.0 0.5 1.0 1.5 V2.0
VF
Fig. 1 Forward current IF versus VF
2.0
1.5 Kf
1.0 IRM
0.5 Qr
3000
nC
TVJ= 100°C VR = 300V
2-3
417
/
DSEP 29-06B
100 A 80
IF 60
TVJ = 150°C TVJ = 100°C
40
20 TVJ = 25°C
0
0
1
2
3 V4
VF
Fig. 1 Forward current IF versus VF
2.0
1.5 Kf
1.0
IRM 0.5
35
A
30
A
30
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A, AS) 250
A
(Version B) 200
A
TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
Applications
• Antiparallel diode for high frequency switching devices
• Antisaturation diode • Snubber diode • Free wheeling diode in converters