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IRF540中文资料

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IRF540 N沟道MOS管
特性
‘Thrench’工艺
低的导通内阻
快速开关
低热敏电阻
综述
使用沟渠工艺封装的N通道增强型场效应功率晶体管
应用：
DC到DC转换器
开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚
管脚描述
1 Gate
2 Drain
3 Source
Tab Drain
极限值
系统绝对最大值依照限制值
符号 参数 条件 最小值最大值 单位 V_DSS 漏源极电压 Tj= 25 ˚C to 175˚C - 100 V
V_DGR V_GS I_D I_DM P_D Tj，Tsig
漏门极电压 门源极电压 连续漏电流 脉冲漏电流 总功耗 操作点和
存储温度
Tj = 25 ˚C to 175˚C; RGS = 20 k Ω Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C
- - -
- -
- -55
100 ±20 23 16 92 100 175
V V A A A W ℃
雪崩能量极限值
符号 参数
条件
最小值
最大值 单位AS E AS I
非重复性雪崩能量
最大非重复性雪崩电流
Unclamped inductive load, IAS = 10 A; tp = 350 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:14
- - 230 23
mJ A
热敏电阻
符号
参数
条件
最小值典型值 最大值 单位thj mb R - thj a R -
安装底座交界处的热阻 周围环境热阻
SOT78封装，自由空间SOT404封装，PCB 上
- - -
- 60 50
1.5 - -
K/W K/W K/W
电特性
25℃ 除非另有说明 符号
参数
条件
最小值 典型值 最大值单位 ()BR DSS V
()GS TO V
()DS ON R
漏源极崩溃电压
门阀电压
漏源极导通电阻
GS V =0V ；D I =0.25mA
Tj = -55˚C
DS V = ; ID = 1 mA
GS V Tj = 175˚C Tj = -55˚C
GS V = 10 V; ID = 17 A
Tj = 175˚C
100
89 2
1 - -
- - 3 - - 49 132
- - 4 - 6 77 193
V V V V V m Ωm Ω
fs g GSS I DSS I 向前跨导 门源极泄漏电流 0门极电压漏电流
DS V =25V; D I =17A GS V =±20 V;DS V =0V
VDS = 100 V; VGS = 0 V
VDS=80V;VGS=0V;Tj= 175˚C 8.7 - - - 15.5 10 0.05 - - 100 10 250 S nA uA uA ()g tot Q gs Q gd Q 总共门极电荷 门源极电荷 门漏极电荷 ID = 17 A VDD = 80 V; VGS = 10 V
- - - - - - 65 10 29 nC nC nC d on T
r T d
off T
f T 开启延迟时间 开启上沿时间
关闭延迟时间 关闭下沿时间 DD V = 50 V; D R = 2.2 Ω; DD V = 10 V; G R = 5.6 Ω
Resistive load
- - - -
8 39 26 24 - - - -
ns ns ns ns d L d L
s L
内部漏电感 内部漏电感
内部源极电感
Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only)
Measured from source lead to source bond pad
-
-
- 3.5 4.5 7.5
- - -
nH nH nH
iSS C oSS C rSS C
输入电容 输出电容 反馈电容
GS V = 0 V; S D V = 25 V; f = 1 MHz
- - -
890 139 83
1187 167 109
pF pF pF
反向二极管极限值及特性
符号 参数
条件
最小值
典型值
最大值
单位
S I SM I
DS V
连续源极电流
脉冲源极电流
二极管正向电压
F I =28A ； GS V =0V
- - - - - 0.94 23 92 1.5 A A V t rr
rr Q
反向恢复之间
反向恢复命令
F I =17A ；=0V;
GS V -d F I /dt=100A/us;=25V
R V - -
61 200
- -
ns nC
底座温度-自然功率降低百分比
图1：自然功率损耗
底座温度-漏电流降低百分比
图2 ：自然持续漏电流
漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

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IRF540_03中文资料

IRF540_03中文资料

1/8February 2003NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &IRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220LOW GATE CHARGE STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.055Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGEsAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROLTYPE V DSS R DS(on)I D IRF540100 V<0.077 Ω22 AOrdering InformationABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.1) I SD ≤22A, di/dt ≤300A/µs, V DD ≤ V (BR)DSS , Tj ≤ T JMAX (2) Starting T j = 25 o C, I D = 12A, V DD = 30VSALES TYPEMARKINGPACKAGEPACKAGINGIRF540IRF540&TO-220TUBESymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)100V V DGR Drain-gate Voltage (R GS = 20 k Ω)100V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 22A I D Drain Current (continuous) at T C = 100°C 15A I DM (•)Drain Current (pulsed)88A P tot Total Dissipation at T C = 25°C 85W Derating Factor0.57W/°C dv/dt (1)Peak Diode Recovery voltage slope 9V/ns E AS (2)Single Pulse Avalanche Energy 220mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureIRF5402/8THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (1)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max Typ1.7662.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0100V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 11 A0.0550.077ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS =25 VI D =11 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 087012552pF pF pF3/8IRF540SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 50 VI D = 12 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)6045ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 80 V I D = 22 A V GS = 10V3061041nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 50 VI D = 12 A R G =4.7Ω, V GS = 10 V (Resistive Load, Figure 3)5020nsnsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)2288A A V SD (*)Forward On Voltage I SD = 22 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 22 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)1003757.5ns nC AELECTRICAL CHARACTERISTICS (continued)IRF540IRF540IRF5406/8Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/8IRF540DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATAIRF540Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2003 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.8/8。

IRF540 数据手册

IRF540 数据手册

1/8February 2003NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &IRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220LOW GATE CHARGE STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.055Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGEsAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROLTYPE V DSS R DS(on)I D IRF540100 V<0.077 Ω22 AOrdering InformationABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.1) I SD ≤22A, di/dt ≤300A/µs, V DD ≤ V (BR)DSS , Tj ≤ T JMAX (2) Starting T j = 25 o C, I D = 12A, V DD = 30VSALES TYPEMARKINGPACKAGEPACKAGINGIRF540IRF540&TO-220TUBESymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)100V V DGR Drain-gate Voltage (R GS = 20 k Ω)100V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 22A I D Drain Current (continuous) at T C = 100°C 15A I DM (•)Drain Current (pulsed)88A P tot Total Dissipation at T C = 25°C 85W Derating Factor0.57W/°C dv/dt (1)Peak Diode Recovery voltage slope 9V/ns E AS (2)Single Pulse Avalanche Energy 220mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureIRF5402/8THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (1)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max Typ1.7662.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0100V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 11 A0.0550.077ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS =25 VI D =11 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 087012552pF pF pF3/8IRF540SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 50 VI D = 12 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)6045ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 80 V I D = 22 A V GS = 10V3061041nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 50 VI D = 12 A R G =4.7Ω, V GS = 10 V (Resistive Load, Figure 3)5020nsnsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)2288A A V SD (*)Forward On Voltage I SD = 22 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 22 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)1003757.5ns nC AELECTRICAL CHARACTERISTICS (continued)IRF540IRF540IRF5406/8Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/8IRF540DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATAIRF540Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2003 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.8/8。

IRF540中文资料

IRF540中文资料

IRF540 N 沟道 MOS 管
特性
‘Thrench’工艺 低的导通内阻 快速开关 低热敏电阻
综述
使用沟渠工艺封装的 N 通道增强型场效应功率晶体管 应用： DC 到 DC 转换器 开关电源 电视及电脑显示器电源 IRF540 中提供的是 SOT78(TO220AB)常规铅的包裹。 IRF540S中提供的是SOT404(D PAK)表面安装的包裹。
热敏电阻
符号 参数
安装底座交界 处的热阻 周围环境热阻
条件
最小值 -
典型值 60 50
最大值 1.5 -
单位 K/W K/W K/W
Rthj mb Rthj a
SOT78 封装，自由空间 SOT404 封装，PCB 上
-
电特性
25℃ 除非另有说明 符号 参数 漏源极崩溃电压 条件 最小值 100 Tj = -55˚C 门阀电压 89 2 Tj = 175˚C Tj = -55˚C 漏源极导通电阻 1 Tj = 175˚C 典型值 3 49 132 最大值 4 6 77 193 单位 V V V V V mΩ mΩ
-
Ls
内部源极电感
Measured from source lead to source bond pad
-
7.5
-
nH
CiSS CoSS CrSS
输入电容 输出电容 反馈电容
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
890 139 83
1187 167 109
pF pF pF
反向二极管极限值及特性
符号
参数 连续源极电流 脉冲源极电流 二极管正向电压 反向恢复之间 反向恢复命令
IRF540中文数据手册知识讲解

IRF540中文数据手册知识讲解

I R F540中文数据手册
IRF540 N沟道MOS管
特性
‘Thrench’工艺
低的导通内阻
快速开关
低热敏电阻
综述
使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：
DC到DC转换器
开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚
管脚描述
1 Gate
2 Drain
3 Source
Tab Drain
极限值
雪崩能量极限值
热敏电阻
电特性
25℃除非另有说明
反向二极管极限值及特性
底座温度-自然功率降低百分比
图1：自然功率损耗
底座温度-漏电流降低百分比
图2 ：自然持续漏电流
漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。