BL-S100A-11SG中文资料
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BL-S100X-11XX
■ Features:
Ø 26.00mm (1.0”) Single digit numeric display series, BI-COLOR TYPE Ø Low current operation.
Ø Excellent character appearance.
Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Ø ROHS Compliance.
Electrical-optical characteristics: (Ta=25℃) (Test Condition: IF=20mA)
Part No
Chip
VF Unit:V
Common Cathode
Common Anode
Emitted Color
Material
λP (nm)
Typ
Max
Iv
TYP.(mcd)
Super Red
AlGaInP 660 1.85 2.20 80 BL-S100A-11SG-XX
BL-S100B-11SG-XX
Green
GaP/GaP 570 2.20 2.50 92 Orange GaAsP/Ga
P 635 2.10 2.50 92 BL-S100A-11EG-XX BL-S100B-11EG-XX
Green
GaP/GaP 570 2.20 2.50 92 Ultra Red AlGaInP 660 2.20 2.50 120 BL-S100A-11DUG-X X
BL-S100B-11DUG-X X
Ultra Green AlGaInP 574 2.20 2.50 75 Ultra Orange AlGaInP 630 2.10 2.50 95 BL-S100A-11UEUG-XX
BL-S100B-11UEUG-XX
Ultra Green
AlGaInP
574
2.20
2.50
120
n
-XX: Surface / Lens color :
Number
1 2 3 4 5 Ref Surface Color White Black Gray Red Green
Epoxy Color
Water
clear
White diffused
Red Diffused
Green Diffused
Yellow Diffused
n
Absolute maximum ratings (Ta=25°C)
Parameter
S
G
E
D
UG
UE
U nit
Forward Current I F 30
30 30 30 30 30 mA Power Dissipation P d 75 80 80 75 75 65 mW Reverse Voltage V R
5 5 5 5 5 5 V Peak Forward Current I PF (Duty 1/10 @1KHZ)
150
150
150
150
150
150
mA Operation Temperature T OPR -40 to +80 ℃ Storage Temperature T STG -40 to +85
℃
Lead Soldering Temperature
T SOL
Max.260±5℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb)
℃
BL-S100X-11XX
■ Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
BL-S100X-11XX
■ Typical electrical-optical characteristics curves:
1.0
0.5
0350
4004505005506006507007508008509009501000
(A)(B)(C)(D)(2)(3)(8)(4)(1)(6)(5)(9)(10)
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH()
λp (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue
(C) - (D) -
InGaN/SiC 505nm/Ultra Green InGaAl/SiC 525nm/Ultra Green
504030201001.2
1.6
2.0 2.4 2.6
3.01
63
45
2850403020100
20406080100
16
2,4,8,A 35
3210.50.20.1-30
-20
-10
10
20
30
40
50
60
70
15423
1098765
432
1
10KHz 3KHz 1KHz 300KHz 100KHz F-REFRESH RATE 100KHz 30KHz 10KHz 3KHz 1KHz 300Hz 100Hz 10987654321
1
10100100010,000
FORWARD VOLTAGE (Vf)FORWARD CURRENT VS.FORWARD VOLTAGE
RELATIVE LUMINOUS
INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta()℃FORWARD CURRENT VS. AMBIENT TEMPERATURE
tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K)
NOTE:25free air temperature unless otherwise specified
℃tp-PULSE DURATION uS
FORWARD CURRENT(mA)FORWARD CURRENT (mA)RELATIVE LUMINOUS INTENSITY
FORWARD CURRENT(mA)
REL ATIVE LUMINOUS INTENSITY
AMBIENT TEMPERATURE Ta()
℃(5)
Ipeak MAX.IDC MAX.
Ipeak M AX.IDC MAX.。