CD4023BMS中文资料

40系列数字集成电路功能型号表_为明天奋斗百度空间 | 百度首页 | 登录为明天奋斗学习交流与人生启迪主页博客相册|个人档案 |好友查看文章40系列数字集成电路功能型号表2007-12-26 10:504000系列4000 双3输入或非门加1输入反相器4001 四2输入或非门4002 双4输入或非门4006 18位串入串出静态移位寄存器4007 双互补对加反相器4008 4位二进制超前进位全加器4009 六缓冲器/电平变换器（反相）4010 六缓冲器/电平变换器（同相）4011 四2输入与非门4012 双4输入与非门4013 双D型触发器（带预置和清除端）4014 8位串入/并入串出移位寄存器4015 双4位串入并出移位寄存器4016 四双向模拟开关4017 十进制计数/分配器4018 可预置1/N计数器4019 四2选1数据选择器4020 14位二进制串行计数器4021 8位静态移位寄存器4022 八进制计数/分配器4023 三3输入与非门4024 7位二进制串行计数器/分频器4025 三3输入或非门4026 十进制计数/七段译码器4027 双J—K主从触发器4028 BCD十进制译码器4029 4位可预置/可逆计数器4030 四异或门4031 64位静态移位寄存器4032 三串行加法器（同相）4033 十进制计数/七段译码器4034 8位通用总线寄存器4035 4位并入/并出移位寄存器4038 三串行加法器（反相）4040 12位二进制计数器4041 四同相/反相缓冲器4042 四D型锁存器4043 四或非R—S锁存器（三态）4044 四与非R—S锁存器（三态）4045 21位计数器4046 锁相环4047 无稳态/单稳态多谐振荡器4048 8输入多功能门（三态可扩展） 4049 六缓冲器/电平变换器（反相） 4050 六缓冲器/电平变换器（同相） 4051 单8通道模拟开关4052 双4通道模拟开关4053 三2通道模拟开关4054 四段液晶显示驱动4055 BCD—7段液晶显示译码/驱动器 4056 BCD—7段液晶显示译码/驱动器 4058 双4位锁存器4059 1/N计数器4060 14位二进制串行计数器/分频器 4063 4位数值比较器4066 四双向模拟开关4067 单16通道模拟开关4068 8输入与非/与门4069 六反相器4070 四异或门4071 四2输入或门4072 双4输入或门4073 三3输入与门4075 三3输入或门4076 四D型寄存器（三态）4077 四异或非门4078 8输入或非/或门4081 四2输入与门4082 双4输入与门4085 双2路2输入与或非门4086 四2输入与或非门4089 二进制系数乘法器4093 四2输入与非施密特触发器4094 8位移位存贮总线寄存器4095 3输入J—K触发器4096 3输入J—K触发器4097 双8通道模拟开关4098 双可再触发单稳态触发器4099 8位可寻址锁存器4500系列4501 双4输入端与非门4502 六反相器/缓冲器4503 六缓冲器（三态）4504 六电平变换器4505 64位静态随机存贮器4506 双2输入可扩展或非门4507 四异或门4508 双4位D锁存器4510 可预置BCD可逆计数器4511 BCD-七段译码器 /驱动器4512 8选1数据选择器4513 BCD-七段译码器 /驱动器4514 4-16线译码器4515 4-16线译码器4516 可预置二进制可逆计数器4517 双64位静态移位寄存器4518 双BCD同步加计数器4519 4位与或选择器4520 双4位二进制同步加计数器 4521 24组分频器4522 可预置BCD 同步1/N计数器 4526 可预置4位二进制1/N计数器 4527 BCD系数乘法器4528 双可重触发单稳态触发器4529 双四通道模拟开关4530 双5输入过半数逻辑门4531 12位奇偶校验器4532 8位优先编码器4534 实时五、十进制计数器4536 可编程定时器4538 双精密可重触发单稳态触发器 4539 双4通道数选择器4541 可编程定时器4543 BCD-七段译码器 /驱动器4544 BCD-七段译码器 /驱动器4547 BCD-译码/大流动驱动器4549 近似函数寄存器4551 四2通道模拟开关4553 三数字BCD计数器4555 双4选1译码器4556 双4选1译码器4557 1－64位可变长度移位寄存器 4558 BCD-七段译码器4559 近似函数寄存器4560 “N”BCD加法器4561 “9”求补器4562 128位静态移位寄存器4566 工业定时基准发生器4568 相位比较器和可编程计数器4569 双可预置BCD/二进计数器4572 四反相器输入或/与非门4574 四可编程电压比较器4582 超前进位电路4583 双施密特触发器4584 六施密特触发器4585 4位数值比较器4590 单4位锁存器4597 8位总线兼容锁存器（三态）4599 8位可寻址锁存器40000系列40100 32级静态左/右移位寄存器40101 9位奇偶发生器/校验器40102 可预置2位十进制减法计数器40103 可预置8位二进制减法计数器40104 4通用双向移位寄存器40105 16×4先入先出寄存器（三态）40106 六施密特触发器（反相）40107 双3输入与非缓冲器/驱动器40108 4×4多路寄存器（三态）40109 四电平变换器40110 十进制计数/锁存/译码/驱动40147 10～4线BCD优先编码器40160 可预置十进制计数器40161 可预置二进制计数器40162 可预置十进制计数器40163 可预置4位二进制计数器40174 六D型触发器40175 四D触发器40181 4位算术逻辑单元40182 超前进位发生器40192 可预置十进制可逆计数器40193 可预置二进制可逆计数器40194 4位双向通用移位寄存器40195 4位双向通用移位寄存器类别：电子 | 添加到搜藏 | 浏览(210) | 评论 (0) 上一篇：常用数字集成电路集锦下一篇：74系列数字集成电路型号功能表相关文章：•数字集成电路分析与设计(第三版)... •74系列数字集成电路型号功能表•【集成电路常用4000系列标准数字... •数字集成电路:电路系统与设计(第...•数字集成电路功能测试仪存在的严... •数字集成电路使用注意事项•数字集成电路的分类•数字集成电路的分类与命名1•数字集成电路测试设备(ATE)量值... •数字集成电路讲座(10)最近读者：登录后，您就出现在这里。

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.CD4048BMSCMOS Multifunction Expandable 8 Input GatePinoutCD4048BMS TOP VIEWFunctional Diagram14151691312111012345768J (OUTPUT)Kd H G F E VSS Kb VDD A B C D Ka KcEXPAND INPUTSINPUTSBINARY CONTROL INPUTS FUNCTION CONTROL 3 STATE 14131211156543CONTROL10792Ka Kb Kc Kd A B C DEXPANDE F G HIJ OUTPUTVSS = 8VDD = 16INPUTSINPUTSFeatures•High-Voltage Type (20V Rating)•Three State Output•Many Logic Functions Available in One Package •Standardize, Symmetrical Output Characteristics •100% Tested for Quiescent Current at 20V•Maximum Input Current of 1µA at 18V Over Full Pack-age Temperature Range; 100nA at 18V and +25o C •Noise Margin (Over Full Package Temperature Range):-1V at VDD = 5V -2V at VDD = 10V - 2.5V at VDD = 15V •5V, 10V and 15V Parametric Ratings•Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”Applications•Selection of Up to 8 Logic Functions •Digital Control of Logic •General Purpose Gating Logic -Decoding -EncodingDescriptionCD4048BMS is an 8-input gate having four control inputs. Three binary control inputs - Ka, Kb, and Kc - provide the implementa-tion of eight different logic functions. These functions are OR,NOR, AND, NAND, OR/AND, OR/NAND, AND/OR and AND/NOR.A fourth control input, Kd, provides the user with a 3-state output.When control input Kd is high, the output is either a logic 1 or a logic 0 depending on the inner states. When control input Kd is low, the output is an open circuit. This feature enables the user to connect this device to a common bus line.In addition to the eight input lines, an EXPAND input is provided that permits the user to increase the number of inputs into a CD4048BMS (see Figure 2). For example, two CD4048BMS’s can be cascaded to provided a 16-input multifunction gate. When the EXPAND input is not used, it should be connected to VSS.The CD4048BMS is supplied in these 16 lead outline packages:Braze Seal DIP H4S Frit Seal DIP H1E Ceramic FlatpackH6WDecember 1992File Number3314Absolute Maximum Ratings Reliability InformationDC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . .-0.5V to +20V (Voltage Referenced to VSS Terminals)Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range. . . . . . . . . . . . . . . .-55o C to +125o C Package Types D, F, K, HStorage Temperature Range (TSTG). . . . . . . . . . .-65o C to +150o C Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . .+265o C At Distance 1/16 ± 1/32 Inch (1.59mm± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . .θjaθjc Ceramic DIP and FRIT Package. . . . .80o C/W20o C/W Flatpack Package . . . . . . . . . . . . . . . .70o C/W20o C/W Maximum Package Power Dissipation (PD) at +125o CFor TA = -55o C to +100o C (Package Type D, F, K). . . . . .500mW For TA = +100o C to +125o C (Package Type D, F, K) . . . . .DerateLinearity at 12mW/o C to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175o CTABLE1.DC ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL CONDITIONS(NOTE 1)GROUP ASUBGROUPS TEMPERATURELIMITSUNITSMIN MAXSupply Current IDD VDD = 20V, VIN = VDD or GND1+25o C-0.5µA2+125o C-50µAVDD = 18V, VIN = VDD or GND3-55o C-0.5µA Input Leakage Current IIL VIN = VDD or GND VDD = 201+25o C-100-nA2+125o C-1000-nAVDD = 18V3-55o C-100-nA Input Leakage Current IIH VIN = VDD or GND VDD = 201+25o C-100nA2+125o C-1000nAVDD = 18V3-55o C-100nA Output Voltage VOL15VDD = 15V, No Load1, 2, 3+25o C, +125o C, -55o C-50mV Output Voltage VOH15VDD = 15V, No Load (Note 3)1, 2, 3+25o C, +125o C, -55o C14.95-V Output Current (Sink)IOL5VDD = 5V, VOUT = 0.4V1+25o C0.53-mA Output Current (Sink)IOL10VDD = 10V, VOUT = 0.5V1+25o C 1.4-mA Output Current (Sink)IOL15VDD = 15V, VOUT = 1.5V1+25o C 3.5-mA Output Current (Source)IOH5A VDD = 5V, VOUT = 4.6V1+25o C--0.53mA Output Current (Source)IOH5B VDD = 5V, VOUT = 2.5V1+25o C--1.8mA Output Current (Source)IOH10VDD = 10V, VOUT = 9.5V1+25o C--1.4mA Output Current (Source)IOH15VDD = 15V, VOUT = 13.5V1+25o C--3.5mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA1+25o C-2.8-0.7V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA1+25o C0.7 2.8VFunctional F VDD = 2.8V, VIN = VDD or GND7+25o C VOH >VDD/2VOL <VDD/2VVDD = 20V, VIN = VDD or GND7+25o CVDD = 18V, VIN = VDD or GND8A+125o CVDD = 3V, VIN = VDD or GND8B-55o CInput Voltage Low(Note 2)VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V1, 2, 3+25o C, +125o C, -55o C- 1.5VInput Voltage High(Note 2)VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V1, 2, 3+25o C, +125o C, -55o C 3.5-VInput Voltage Low (Note 2)VIL VDD = 15V, VOH > 13.5V,VOL < 1.5V1, 2, 3+25o C, +125o C, -55o C-4VInput Voltage High (Note 2)VIH VDD = 15V, VOH > 13.5V,VOL < 1.5V1, 2, 3+25o C, +125o C, -55o C11-VTri-State Output Leakage IOZL VIN = VDD or GNDVOUT = 0VVDD = 20V1+25o C-0.4-µA2+125o C-12-µAVDD = 18V3 -55o C-0.4-µATri-State Output Leakage IOZH VIN = VDD or GNDVOUT = VDDVDD = 20V1+25o C-0.4µA2+125o C-12µAVDD = 18V3 -55o C-0.4µANOTES: 1.All voltages referenced to device GND, 100% testing being implemented.2.Go/No Go test with limits applied to inputs.3.For accuracy, voltage is measured differentially to VDD. Limitis 0.050V max.TABLE2.AC ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL CONDITIONS(NOTE 1, 2)GROUP ASUBGROUPS TEMPERATURELIMITSUNITSMIN MAXPropagation Delay Ka to Output TPHLTPLHVDD = 5V, VIN = VDD or GND9+25o C-600ns10, 11+125o C, -55o C-810nsTransition Time TTHLTTLH VDD = 5V, VIN = VDD or GND9+25o C-200ns10, 11+125o C, -55o C-270nsNOTES:1.CL = 50pF, RL = 200K, Input TR, TF < 20ns.2.-55o C and +125o C limits guaranteed, 100% testing being implemented.TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL CONDITIONS NOTES TEMPERATURELIMITSUNITS MIN MAXSupply Current IDD VDD = 5V, VIN = VDD or GND1, 2-55o C, +25o C-0.25µA+125o C-7.5µAVDD = 10V, VIN = VDD or GND1, 2-55o C, +25o C-0.5µA+125o C-15µAVDD = 15V, VIN = VDD or GND1, 2-55o C, +25o C-0.5µA+125o C-30µA Output Voltage VOL VDD = 5V, No Load1, 2+25o C, +125o C,-55o C-50mVOutput Voltage VOL VDD = 10V, No Load1, 2+25o C, +125o C,-55o C-50mVOutput Voltage VOH VDD = 5V, No Load1, 2+25o C, +125o C,-55o C4.95-VOutput Voltage VOH VDD = 10V, No Load1, 2+25o C, +125o C,-55o C9.95-V Output Current (Sink)IOL5VDD = 5V, VOUT = 0.4V1, 2+125o C0.36-mA-55o C0.64-mA Output Current (Sink)IOL10VDD = 10V, VOUT = 0.5V1, 2+125o C0.9-mA-55o C 1.6-mA Output Current (Sink)IOL15VDD = 15V, VOUT = 1.5V1, 2+125o C 2.4-mA-55o C 4.2-mA Output Current (Source)IOH5A VDD = 5V, VOUT = 4.6V1, 2+125o C--0.36mA-55o C--0.64mA Output Current (Source)IOH5B VDD = 5V, VOUT = 2.5V1, 2+125o C--1.15mA-55o C--2.0mA Output Current (Source)IOH10VDD = 10V, VOUT = 9.5V1, 2+125o C--0.9mA-55o C--1.6mA Output Current (Source)IOH15VDD =15V, VOUT = 13.5V1, 2+125o C--2.4mA-55o C--4.2mAInput Voltage Low VIL VDD = 10V, VOH > 9V, VOL <1V 1, 2+25o C, +125o C,-55o C-3VInput Voltage High VIH VDD = 10V, VOH > 9V, VOL <1V 1, 2+25o C, +125o C,-55o C7-VPropagation Delay Ka to Output TPHL1TPLH1VDD = 10V1, 2, 3+25o C-300ns VDD = 15V1, 2, 3+25o C-240nsPropagation Delay Inputs to Output TPHL2TPLH2VDD = 5V1, 2, 3+25o C-600ns VDD = 10V1, 2, 3+25o C-300ns VDD = 15V1, 2, 3+25o C-240nsPropagation Delay Kb to Output TPHL3TPLH3VDD = 5V1, 2, 3+25o C-450ns VDD = 10V1, 2, 3+25o C-170ns VDD = 15V1, 2, 3+25o C-110nsPropagation Delay Kc to Output TPHL4TPLH4VDD = 5V1, 2, 3+25o C-280ns VDD = 10V1, 2, 3+25o C-100ns VDD = 15V1, 2, 3+25o C-80nsPropagation Delay Expand Input to Output TPHL5TPLH5VDD = 5V1, 2, 3+25o C-380ns VDD = 10V1, 2, 3+25o C-180ns VDD = 15V1, 2, 3+25o C-130nsPropagation Delay 3 StateKd to Output TPHZ, LZTPZH, ZLVDD = 5V1, 2, 4+25o C-160nsVDD = 10V1, 2, 4+25o C-70nsVDD = 15V1, 2, 4+25o C-50nsTransition Time TTLHTTHL VDD = 10V1, 2, 3+25o C-100ns VDD = 15V1, 2, 3+25o C-80nsInput Capacitance CIN Any Input1, 2+25o C-7pF3 State OutputCapacitanceCO1, 2+25o C-10pF NOTES:1.All voltages referenced to device GND.2.The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterizedon initial design release and upon design changes which would affect these characteristics.3.CL = 50pF, RL = 200K, Input TR, TF < 20ns.4.CL = 50pF, RL = 1K, Input TR, TF < 20ns.TABLE4.POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL CONDITIONS NOTES TEMPERATURELIMITSUNITS MIN MAXSupply Current IDD VDD = 20V, VIN = VDD or GND1, 4+25o C-25µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA1, 4+25o C-2.8-0.2V N Threshold VoltageDelta∆VTN VDD = 10V, ISS = -10µA1, 4+25o C-±1V P Threshold Voltage VTP VSS = 0V, IDD = 10µA1, 4+25o C0.2 2.8V P Threshold VoltageDelta∆VTP VSS = 0V, IDD = 10µA1, 4+25o C-±1VFunctional F VDD = 18V, VIN = VDD or GND1+25o C VOH >VDD/2VOL <VDD/2VVDD = 3V, VIN = VDD or GNDPropagation Delay Time TPHLTPLH VDD = 5V1, 2, 3, 4+25o C- 1.35 x+25o CLimitnsNOTES: 1.All voltages referenced to device GND.2.CL = 50pF, RL = 200K, Input TR, TF < 20ns.3.See Table 2 for +25o C limit.4.Read and RecordTABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURELIMITSUNITS MIN MAXTABLE5.BURN-IN AND LIFE TEST DELTA PARAMETERS +25O C PARAMETER SYMBOL DELTA LIMIT Supply Current - SSI IDD±0.1µAOutput Current (Sink)IOL5± 20% x Pre-Test Reading Output Current (Source)IOH5A± 20% x Pre-Test ReadingTABLE6.APPLICABLE SUBGROUPSCONFORMANCE GROUP MIL-STD-883METHOD GROUP A SUBGROUPS READ AND RECORDInitial Test (Pre Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A, RONDEL10 Interim Test 1 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A, RONDEL10 Interim Test 2 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A, RONDEL10 PDA (Note 1)100% 50041, 7, 9, DeltasInterim Test 3 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A, RONDEL10 PDA (Note 1)100% 50041, 7, 9, DeltasFinal Test100% 50042, 3, 8A, 8B, 10, 11Group A Sample 50051, 2, 3, 7, 8A, 8B, 9, 10, 11Group B Subgroup B-5Sample 50051, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11 Subgroup B-6Sample 50051, 7, 9Group D Sample 50051, 2, 3, 8A, 8B, 9Subgroups 1, 2 3NOTE:1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.TABLE7.TOTAL DOSE IRRADIATIONCONFORMANCE GROUPS MIL-STD-883METHODTEST READ AND RECORDPRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRADGroup E Subgroup 250051, 7, 9Table 41, 9Table 4TABLE8.BURN-IN AND IRRADIATION TEST CONNECTIONSFUNCTION OPEN GROUND VDD9V± -0.5VOSCILLATOR50kHz25kHzStatic Burn-In 1Note 11 2 - 1516Static Burn-In 2Note 118 2 - 7, 9 - 16Dynamic Burn-In Note 1-8, 152, 1619 - 14 3 - 7IrradiationNote 218 2 - 7, 9 - 16NOTE:1.Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V± 0.5V2.Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,VDD = 10V± 0.5VLogic DiagramsFIGURE 1.BASIC LOGIC CONFIGURATIONSFIGURE 2.LOGIC DIAGRAMNORORNANDANDOR/ANDOR/NANDAND/ORAND/NORACEGB D F H ACEGB D F H ACEGB D F H ACEGB D F H A BCDEFG HA B C D E F G HA B C D E F G HA B C D E F G HEXPEXPEXPEXPEXPEXP EXP EXP 10141312111565437921KaA B C D EXP EFGH*********KbKbKcKa Kb Kc Kd ****Ka Kb Kc Kd Ka Kb KcKdKdJVDDVSSKdVDDVSS* ALL INPUTS ARE PROTECTEDBY CMOS PROTECTION NETWORKFIGURE 3.ACTUAL CIRCUIT LOGIC CONFIGURATIONSApplications of Expand InputFIGURE 4.12 INPUT OR/AND GATEFIGURE 5.16 INPUT NOR GATEIMPLEMETATION OF EXPAND INPUT FOR 9 OR MORE INPUTSOUTPUT FUNCTION FUNCTION NEEDED AT EXPAND INPUTOUTPUT BOOLEAN EXPRESSION NOR OR J=(A+B+C+D+E+F+G+H)+(EXP)OR OR J=(A+B+C+D+E+F+G+H)+(EXP)AND NAND J=(ABCDEFGH)•(EXP)NAND NAND J=(ABCDEFGH)•(EXP)OR/AND NOR J=(A+B+C+D)•(E+F+G+H)•(EXP)OR/NAND NOR J=(A+B+C+D)•(E+F+G+H)•(EXP)AND/NOR AND J=(ABCD)+(EFGH)+(EXP)AND/ORANDJ=(ABCD)+(EFGH)+(EXP)NOTES: 1.(EXP) designates the EXPAND function (i.e., X1 + X2 + . . .XN).2.Refer to FUNCTION TRUTH TABLE for connection of unused inputs.Logic Diagrams(Continued)11121314345615Ka - Kb - Kc 0 - 0 - 0NORNAND1 - 0 - 11 - 0 - 01 - 1 - 00 - 1 - 10 - 0 - 10 - 1 - 01 - 1 - 1ANDAND/NOROR/NANDORAND/OROR/AND14151691312111012345768J (OUTPUT)Kd H G F E VSSKbVDDA B C D Ka Kc VSSX1X2X3X4VDD1/2 CD4002AVDD 12 - INPUT OR/AND GATEJ = (A+B+C+D)(E+F+G+H)(X1+X2+X3+X4)..14151691312111012345768OUTPUT KdH1G1F1E1VSSKbVDDA1B1C1D1Ka KcVDDVSSVSS VDD14151691312111012345768J(OUTPUT)KdH2G2F2E2VSSKbVDD A2B2C2D2Ka KcVSSEXPVDDOR FUNCTION16 - INPUT NOR GATEJ = A1 +B1 +C1 +D1 +E1 +F1 +G1 +H1 +A2 +B2 +C2 +D2 +E2 +F2 +G2 +H2FUNCTION TRUTH TABLEOUTPUT FUNCTION BOOLEAN EXPRESSION Ka Kb Kc UNUSED INPUT*NOR J=A+B+C+D+E+F+G+H 000VSS OR J=A+B+C+D+E+F+G+H 001VSS OR/AND J=(A+B+C+D)•(E+F+G+H)010VSS OR/NAND J=(A+B+C+D)•(E+F+G+H)011VSS AND J=ABCDEFGH 100VDD NAND J=ABCDEFGH 101VDD AND/NOR J=ABCD+EFGH 110VDD AND/ORJ=ABCD+EFGH111VDDKd = 1Normal Inverter Action Kd = 0High Impedance Output EXPAND Input = 0*See Figures 1, 2, 3, 4 and 5Typical Performance CharacteristicsFIGURE 6.TYPICAL OUTPUT LOW (SINK) CURRENTCHARACTERISTICS FIGURE 7.MINIMUM OUTPUT LOW (SINK) CURRENTCHARACTERISTICS10V5VAMBIENT TEMPERATURE (T A ) = +25o CGATE-TO-SOURCE VOLTAGE (VGS) = 15V51015151********DRAIN-TO-SOURCE VOLTAGE (VDS) (V)O U T P U T L O W (S I N K ) C U R R E N T (I O L ) (m A )10V5VAMBIENT TEMPERATURE (T A ) = +25o CGATE-TO-SOURCE VOLTAGE (VGS) = 15V510157.55.02.510.012.515.0DRAIN-TO-SOURCE VOLTAGE (VDS) (V)O U T P U T L O W (S I N K ) C U R R E N T (I O L ) (m A )FIGURE 8.TYPICAL OUTPUT HIGH (SOURCE) CURRENTCHARACTERISTICSFIGURE 9.MINIMUM OUTPUT HIGH (SOURCE) CURRENTCHARACTERISTICSFIGURE 10.TYPICAL PROPAGATION DELAY TIME (LOGICINPUTS TO OUTPUT) AS A FUNCTION OF LOAD CAPACITANCEFIGURE 11.TYPICAL TRANSITION TIME vs LOADCAPACITANCEFIGURE 12.TYPICAL POWER DISSIPATION AS AFUNCTION OF INPUT FREQUENCYTypical Performance Characteristics(Continued)-10V-15VAMBIENT TEMPERATURE (T A ) = +25o CGATE-TO-SOURCE VOLTAGE (VGS) = -5V0-5-10-15DRAIN-TO-SOURCE VOLTAGE (VDS) (V)-20-25-30-5-10-15O U T P U T H I G H (S O U R C E ) C U R R E N T (I O H ) (m A )-10V-15VAMBIENT TEMPERATURE (T A ) = +25o C-5-10-15DRAIN-TO-SOURCE VOLTAGE (VDS) (V)-5-10-15O U T P U T H I G H (S O U R C E ) C U R R E N T (I O H ) (m A )GATE-TO-SOURCE VOLTAGE (VGS) = -5VLOAD CAPACITANCE (CL) (pF)0P R O P A G A T I O N D E L A Y T I M E (t P H L , t P L H ) (n s )SUPPL Y VOLTAGE (VDD) = 5V10V15V20406080100100200300AMBIENT TEMPERATURE (T A ) = +25o CAMBIENT TEMPERATURE (T A ) = +25o CLOAD CAPACITANCE (CL) (pF)40608010020050100150200SUPPL Y VOLTAGE (VDD) = 5V10V15VT R A N S I T I O N T I M E (f T H L , f T L H ) (n s )10V 15VINPUT FREQUENCY (fI) (kHz)110102103104AMBIENT TEMPERATURE (T A ) = +25o C LOAD CAPACITANCE (CL) = 50pF D Y N A M I C P O W E R D I S S I P A T I O N (P D ) (µW )103102108642864286421048642105SUPPL Y VOLTAGE (VDD) = 5V86428642864286428642105Test Circuits and Wave FormsFIGURE 13.DYNAMIC POWER DISSIPATION TEST CIRCUITFIGURE 14.TEST CIRCUIT FOR tPHL, tTHL, AND tTHL (AND)MEASUREMENTSFIGURE 15.TEST CIRCUIT FOR tPZL, tPZH, tPLZ, AND tPHZ(AND)FIGURE 16.WAVEFORMS FOR tPZL, tPZH, tPLZ AND tPHZ(AND)FIGURE 17.WAVEFORMS FOR tPHL AND tPHL (AND)FIGURE 18.WAVEFORMS FOR tTHL AND tTLH (AND)12345768141516913121110CLHPULSE GENERATORVDD500µF0.1µF12345768141516913121110CL = 15pF VDDOUTPUT OR 50pFINPUTVDD12345768141516913121110PULSE GENERATORKd(AND)50pFVDD (tPLZ)(tPZL)VSS (tPHZ)(tPZH)VDD VSStPHLOUTPUTOUTPUT50%90%10%Kd tPZLtPLZ90%tPZH10%INPUTOUTPUT50%50%tPHLOUTPUTtTHL10%90%INPUTtTLH50%All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web site Sales Office HeadquartersNORTH AMERICAIntersil CorporationP. O. Box 883, Mail Stop 53-204 Melbourne, FL32902TEL:(321) 724-7000FAX: (321) 724-7240EUROPEIntersil SAMercure Center100, Rue de la Fusee1130 Brussels, BelgiumTEL: (32) 2.724.2111FAX: (32) 2.724.22.05ASIAIntersil (Taiwan) Ltd.Taiwan Limited7F-6, No. 101 Fu Hsing North RoadTaipei, TaiwanRepublic of ChinaTEL: (886) 2 2716 9310FAX: (886) 2 2715 3029CD4048BMSChip Dimensions and Pad LayoutDimensions in parentheses are in millimetersand are derived from the basic inch dimensionsas indicated. Grid graduations are in mils (10-3 inch)METALLIZATION:Thickness: 11kÅ−14kÅ, AL.PASSIVATION:10.4kÅ - 15.6kÅ, SilaneBOND PADS:0.004 inches X 0.004 inches MINDIE THICKNESS:0.0198 inches - 0.0218 inches 元器件交易网922。

TL F 5957CD4024BM CD4024BC 7-Stage Ripple Carry Binary CounterMarch1988 CD4024BM CD4024BC7-Stage Ripple Carry Binary CounterGeneral DescriptionThe CD4024BM CD4024BC is a7-stage ripple-carry binarycounter Buffered outputs are externally available fromstages1through7 The counter is reset to its logical‘‘0’’stage by a logical‘‘1’’on the reset input The counter isadvanced one count on the negative transition of eachclock pulseFeaturesY Wide supply voltage range3 0V to15VY High noise immunity0 45V DD(typ )Y Low power TTL Fan out of2driving74Lcompatibility or1driving74LSY High speed12MHz(typ )input pulse rate V DD b V SS e10VY Fully static operationConnection DiagramDual-In-Line PackageTL F 5957–1Top ViewOrder Number CD4024B Schematic DiagramsTL F 5957–3Input LogicFlip-flop logic(1of7identical stages) TL F 5957–4C1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsoluteMaximum Ratings(Notes1 2)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications DC Supply Voltage(V DD)b0 5to a18V DC Input Voltage(V IN)b0 5to V DD a0 5V DC Storage Temperature Range(T S)b65 C to a150 C Power Dissipation(P D)Dual-In-Line700mW Small Outline500mW Lead Temp (Soldering 10sec )(T L)260 C Recommended Operating Conditions(Note2)DC Supply Voltage(V DD)a3to a15V DC Input Voltage(V IN)0to V DD V DC Operating Temperature Range(T A)CD4024BM b55 C to a125 C CD4024BC b40 C to a85 CDC Electrical Characteristics CD4024BM(Note2)Symbol Parameter Conditionsb55 C a25 C a125 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device Current V DD e5V50 35150m AV DD e10V100 510300m AV DD e15V200 720600m A V OL Low Level Output Voltage l l O l k1m AV DD e5V0 0500 050 05VV DD e10V0 0500 050 05VV DD e15V0 0500 050 05V V OH High Level Output Voltage l l O l k1m AV DD e5V4 954 9554 95VV DD e10V9 959 95109 95VV DD e15V14 9514 951514 95V V IL Low Level Input Voltage l l O l k1m AV DD e5V V O e0 5V or4 5V1 521 51 5VV DD e10V V O e1 0V or9 0V3 043 03 0VV DD e15V V O e1 5V or13 5V4 064 04 0V V IH High Level Input Voltage l l O l k1m AV DD e5V V O e0 5V or4 5V3 53 533 5VV DD e10V V O e1 0V or9 0V7 07 067 0VV DD e15V V O e1 5V or13 5V11 011 0911 0V I OL Low Level Output Current V DD e5V V O e0 4V0 640 510 880 36mA(Note3)V DD e10V V O e0 5V1 61 32 250 9mAV DD e15V V O e1 5V4 23 48 82 4mA I OH High Level Output Current V DD e5V V O e4 6V b0 64b0 51b0 88b0 36mA(Note3)V DD e10V V O e9 5V b1 6b1 3b2 25b0 9mAV DD e15V V O e13 5V b4 2b3 4b8 8b2 4mA I IN Input Current V DD e15V V IN e0V b0 10b10b5b0 10b1 0m AV DD e15V V IN e15V0 1010b50 101 0m A DC Electrical Characteristics CD4024BC(Note2)Symbol Parameter Conditionsb40 C a25 C a85 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device Current V DD e5V200 320150m AV DD e10V400 540300m AV DD e15V600 780600m A V OL Low Level Output Voltage l l O l k1m AV DD e5V0 0500 050 05VV DD e10V0 0500 050 05VV DD e15V0 0500 050 05V V OH High Level Output Voltage l l O l k1m AV DD e5V4 954 9554 95VV DD e10V9 959 95109 95VV DD e15V14 9514 951514 95V2DC Electrical Characteristics CD4024BC(Note2)(Continued)Symbol Parameter Conditionsb40 C a25 C a85 CUnits Min Max Min Typ Max Min MaxV IL Low Level Input Voltage l l O l k1m AV DD e5V V O e0 5V or4 5V1 521 51 5VV DD e10V V O e1 0V or9 0V3 043 03 0VV DD e15V V O e1 5V or13 5V4 064 04 0V V IH High Level Input Voltage l l O l k1m AV DD e5V V O e0 5V or4 5V3 53 533 5VV DD e10V V O e1 0V or9 0V7 07 067 0VV DD e15V V O e1 5V or13 5V11 011 0911 0V I OL Low Level Output Current V DD e5V V O e0 4V0 520 440 880 36mA(Note3)V DD e10V V O e0 5V1 31 12 250 9mAV DD e15V V O e1 5V3 63 08 82 4mA I OH High Level Output Current V DD e5V V O e4 6V b0 52b0 44b0 88b0 36mA(Note3)V DD e10V V O e9 5V b1 3b1 1b2 25b0 9mAV DD e15V V O e13 5V b3 6b3 0b8 8b2 4mA I IN Input Current V DD e15V V IN e0V b0 30b10b5b0 30b1 0m AV DD e15V V IN e15V0 3010b50 301 0m A AC Electrical CharacteristicsT A e25 C C L e50pF R L e200k t r and t f e20ns unless otherwise specifiedSymbol Parameter Conditions Min Typ Max Units t PHL t PLH Propagation Delay Time V DD e5V185350ns to Q1Output V DD e10V85125nsV DD e15V70100ns t THL t TLH Transition Time V DD e5V100200nsV DD e10V50100nsV DD e15V4080ns t WL t WH Minimum Input Pulse Width V DD e5V75200nsV DD e10V40110nsV DD e15V3590ns t RCL t FCL Input Rise and Fall Time V DD e5V15m sV DD e10V10m sV DD e15V8m sf CL Maximum Input Pulse Frequency V DD e5V1 55MHzV DD e10V412MHzV DD e15V515MHz t PHL Reset Propagation Delay Time V DD e5V185350nsV DD e10V85125nsV DD e15V70100ns t WH Reset Minimum Pulse Width V DD e5V185350nsV DD e10V85125nsV DD e15V70100nsC IN Input Capacitance(Note4)Any Input57 5pFAC Parameters are guaranteed by DC correlated testingNote1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed they are not meant to imply that the devices should be operated at these limits The table of‘‘Recommended Operating Conditions’’and‘‘Electrical Characteristics’’provides conditions for actual device operationNote2 V SS e0V unless otherwise specifiedNote3 I OH and I OL are tested one output at a timeNote4 Capacitance is guaranteed by periodic tesing3Logic DiagramTL F 5957–24Physical Dimensions inches(millimeters)Ceramic Dual-In-Line Package(J)Order Number CD4024BMJ or CD402BCJNS Package Number J14A5C D 4024B M C D 4024B C 7-S t a g e R i p p l e C a r r y B i n a r y C o u n t e rPhysical Dimensions inches (millimeters)(Continued)Molded Dual-In-Line Package (N)Order Number CD4024BMN or CD402BCNNS Package Number N14ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。