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R7517中文资料

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Figure 1: Typical Spectral Response0.010.11001000WAVELENGTH (nm)CATHODERADIANTSENSITIVITY(mA/W)QUANTUMEFFICIENCY(%)101subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.G Wide Spectral Response .........................G High Cathode SensitivityLuminous .................................................Radiant at 420 nm ...................................Quantum Efficiency at 220 nm ........................G High Anode Sensitivity (at 1000 V)Luminous .................................................Radiant at 420 nm ............................G Fluorescence SpectrophotometersG Fluorescence Immuno AssayG SO2 Monitor (UV Fluorescence)185 nm to 760 nm160 µA/lm Typ.105 mA/W Typ.40 % Typ.1600 A/lm Typ.10.5 × 105 A/W Typ.High QE, Bialkali Photocathode28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On TypeCHARACTERISTlCS (at 25 °C)NOTESA:B:C:D:E:Averaged over any interval of 30 seconds maximum.The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode.Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B.The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B.Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below.H:I:J:K:(1) Light HysteresisThe tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is thenre-illuminated by the previous light level for a minute to measure the variation.(2) Voltage HysteresisThe tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation.The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse.The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times.Hysteresis is temporary instability in anode current after light and voltage are applied.where q = Electronic charge (1.60 × 10-19 coulomb).ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain.∆f = Bandwidth of the system in hertz. 1 hertz is used.S = Anode radiant sensitivity in amperes per watt at the wave- length of peak response.F:G:Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light.ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube.ENI =S2q .ldb .G .∆fElectrode K Dy1Dy2Dy3Dy4Dy5Dy6Dy7Dy8Dy9PDistribution Ratio1111111111SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: AnodeTable 1: Voltage Distribution RatioHysteresis =× 100 (%)l max.l il min.TPMSB0002EATIMEA N O D EFigure 2: Anode Luminous Sensitivity and Gain CharacteristicsFigure 3: Typical Time ResponseFigure 4: Typical ENI with WavelengthTPMSB0175EBTPMSB0176EASUPPLY VOLTAGE (V)T I M E (n s )124681020406080100WAVELENGTH (nm)1010101010E Q U I V A L E N T N O I S E I N P U T (W )SUPPLY VOLTAGE (V)100101102103104105A N O D E L U M I N O U S S E N S I T I V I T Y (A /l m )G A I N103104105106107108TPMS1059E02JUL. 2006. IPFigure 5: Dimensional Outline and Basing Diagram (Unit: mm)Warning–Personal Safety HazardsElectrical Shock –Operating voltages applied to thisdevice present a shock hazard.TPMSA0005EBDIRECTION OF LIGHTBottom View (Basing Diagram)Figure 7: D Type Socket Assembly (Unit: mm)Figure 6: Socket (Unit: mm)Sold SeparatelySold SeparatelyTACCA0002EHTACCA0277EATACCA0064EA* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incor-porate a DC to DC converter type high voltage power supply.: 330 k Ω: 10 nFSOCKETE717-63E717-74E678-11A: 330 kΩ: 10 nFSOCKET * "Wiring diagram applies when -HV is supplied."To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND.HOUSING BOTTOM VIEWHAMAMATSU PHOTONICS K.K., Electron Tube Division314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.deFrance: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.frUnited Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@ North Europe: Hamamatsu Photonics Norden AB: Smidesv ägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it WEB SITE 。

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NCV7517BFTR2G;中文规格书,Datasheet资料

NCV7517BFTR2G;中文规格书,Datasheet资料

NCV7517BFLEXMOS t Hex Low-Side MOSFET Pre-DriverThe NCV7517B programmable six channel low−side MOSFET pre−driver is one of a family of FLEXMOS TM automotive grade products for driving logic−level MOSFETs. The product is controllable by a combination of serial SPI and parallel inputs. It features programmable fault management modes and allows power−limiting PWM operation with programmable refresh time. The device offers 3.3 V/5.0 V compatible inputs and the serial output driver can be powered from either 3.3 V or 5.0 V. Power−on resetprovides controlled powerup and two enable inputs allow all outputs to be simultaneously disabled.Each channel independently monitors its external MOSFET’s drain voltage for fault conditions. Shorted load fault detection thresholds are fully programmable using an externally programmed reference voltage and a combination of four discrete internal ratio values. The ratio values are SPI selectable and allow different detection thresholds for each group of three output channels.Fault information for each channel is 2−bit encoded by fault type and is available through SPI communication. Fault recovery operation for each channel is programmable and may be selected for latch−off or automatic retry.The FLEXMOS family of products offers application scalability through choice of external MOSFETs.Features•16−Bit SPI with Frame Error Detection•3.3 V/5.0 V Compatible Parallel and Serial Control Inputs •3.3 V/5.0 V Compatible Serial Output Driver•Two Enable Inputs•Open−Drain Fault and Status Flags•Programmable−Shorted Load Fault Detection Thresholds−Fault Recovery Mode−Fault Retry Timer−Flag Masking•Load Diagnostics with Latched Unique Fault Type Data−Shorted Load−Open Load−Short to GND•NCV Prefix for Automotive and Other Applications Requiring Site and Change Controls•These are Pb−Free Devices*Benefits•Scalable to Load by Choice of External MOSFET32 LEAD LQFPFT SUFFIXCASE 873AMARKINGDIAGRAMDevice Package Shipping†ORDERING INFORMATIONNCV7517BFTG LQFP(Pb−Free)250 Units/Tray†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specification Brochure, BRD8011/D.NCV7517BAWLYYWWGA= Assembly LocationWL= Wafer LotYY= YearWW= Work WeekG= Pb−Free PackageNCV7517BFTR2G LQFP(Pb−Free)2000 T ape & Reel*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.Figure 1. Block DiagramFigure 2. Application DiagramPIN FUNCTION DESCRIPTIONSymbol DescriptionFLTREF Analog Fault Detect Threshold: 5.0 V Compliant DRN0 – DRN5Analog Drain Feedback: Internally ClampedGAT0 – GAT5Analog Gate Drive: 5.0 V CompliantENA1, ENA2Digital Master Enable Inputs: 3.3 V/5.0 V (TTL) CompatibleIN0 – IN5Digital Parallel Input: 3.3 V/5.0 V (TTL) CompatibleCSB Digital Chip Select Input: 3.3 V/5.0 V (TTL) CompatibleSCLK Digital Shift Clock Input: 3.3 V/5.0 V (TTL) CompatibleSI Digital Serial Data Input: 3.3 V/5.0 V (TTL) CompatibleSO Digital Serial Data Output: 3.3 V/5.0 V CompliantSTAB Digital Open−Drain Output: 3.3 V/5.0 V CompliantFLTB Digital Open−Drain Output: 3.3 V/5.0 V CompliantVCC1Power Supply − Low Power PathGND Power Return − Low Power Path – Device SubstrateVCC2Power Supply − Gate DriversVDD Power Supply − Serial Output DriverVSS Power Return – VCC2, VDD, Drain ClampsFigure 3. 32 Pin LQFP Pinout (Top View)MAXIMUM RATINGS(Voltages are with respect to device substrate.)Rating Value UnitDC Supply (V CC1, V CC2, V DD)−0.3 to 6.5V Difference Between V CC1 and V CC2"0.3V Difference Between GND (Substrate) and V SS"0.3VOutput Voltage (Any Output)−0.3 to 6.5VDrain Feedback Clamp Voltage (Note 1)−0.3 to 47VDrain Feedback Clamp Current (Note 1)10mAInput Voltage (Any Input)−0.3 to 6.5V Junction T emperature, T J−40 to 150°C Storage T emperature, T STG−65 to 150°CPeak Reflow Soldering T emperature: Lead−Free60 to 150 seconds at 217°C (Note 2)260 peak°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ATTRIBUTESCharacteristic ValueESD CapabilityHuman Body Model Machine Model w" 2.0 kV w" 200 VMoisture Sensitivity (Note 2)MSL3 Package Thermal Resistance (Note 3)Junction–to–Ambient, R q JA Junction–to–Pin, R Y JL 86.0 °C/W 58.5 °C/W1.An external series resistor must be connected between the MOSFET drain and the feedback input in the application. Total clamp powerdissipation is limited by the maximum junction temperature, the application environment temperature, and the package thermal resistances.2.For additional information, see or download ON Semiconductor’s Soldering and Mounting T echniques Reference Manual, SOLDERRM/D, andApplication Note AND8003/D.3.Values represent still air steady−state thermal performance on a 4 layer (42 x 42 x 1.5 mm) PCB with 1 oz. copper on an FR4 substrate, usinga minimum width signal trace pattern (384 mm2 trace area).RECOMMENDED OPERATING CONDITIONSSymbol Parameter Min Max Unit V CC1Main Power Supply Voltage 4.75 5.25V V CC2Gate Drivers Power Supply Voltage V CC1− 0.3V CC1+ 0.3VV DD Serial Output Driver Power Supply Voltage 3.0V CC1V V IN High Logic High Input Voltage 2.0V CC1V V IN Low Logic Low Input Voltage00.8VT A Ambient Still−Air Operating T emperature−40125°CELECTRICAL CHARACTERISTICS (4.75 V v V CCX v5.25 V, V DD = V CCX, −40°C v T J v125°C, unless otherwise specified.) (Note 4) Characteristic Symbol Conditions Min Typ Max Unit V CC1 SupplyOperating Current –V CC1= 5.25 V, V FLTREF=1.0 V ENA X= 0ENA1= ENA2= V CC1,V DRNX= 0 V, GAT X drivers offENA1= ENA2= V CC1,GAT X drivers on–––2.803.102.805.05.05.0mAPower−On Reset Threshold V CC1 Rising 3.65 4.20 4.60V Power−On Reset Hysteresis−0.1500.385–V Digital I/OV IN High ENA X, IN X, SI, SCLK, CSB 2.0––V V IN Low ENA X, IN X, SI, SCLK, CSB––0.8V V IN Hysteresis ENA X, IN X, SI, SCLK, CSB100330500mV Input Pullup Current CSB V IN= 0 V−25−10–m A Input Pulldown Current ENA2, IN X, SI, SCLK,V IN= V CC1–1025m A Input Pulldown Resistance ENA1100150200k W SO Low Voltage V DD= 3.3 V, I SINK= 5.0 mA–0.110.25VSO High Voltage V DD= 3.3 V, I SOURCE= 5.0 mA V DD−0.25V DD−0.11–VSO Output Resistance Output High or Low–22–W SO Tri−State Leakage Current CSB = 3.3 V−10–10m A STAB Low Voltage STAB Active, I STAB= 1.25 mA–0.10.25V STAB Leakage Current V STAB= V CC1––10m A FLTB Low Voltage FLTB Active, I FLTB= 1.25 mA–0.10.25V FLTB Leakage Current V FLTB= V CC1––10m A Fault Detection – GAT X ONFLTREF Input Current V FLTREF=0 V−1.0––m A FLTREF Input Linear Range(Note 5)0–V CC1−2.0V FLTREF Op−amp V CC1 PSRR(Note 5)30––dBDRN X Clamp Voltage V CL I DRNX= 10 m AI DRNX= I CL(MAX) = 10 mA 27–3442–47VDRN X Shorted Load Threshold GAT X Output HighV FLTREF= 1.0 V Register 2: R1= 0, R0= 0 orR4= 0, R3= 0202530%V FLTREF Register 2: R1= 0, R0= 1 orR4= 0, R3= 1455055%V FLTREF Register 2: R1= 1, R0= 0 orR4= 1, R3= 0707580%V FLTREF Register 2: R1= 1, R0= 1 orR4= 1, R3= 195100105%V FLTREFDRN X Input Leakage Current V CC1= V CC2= V DD= 5.0 V,ENA X= IN X= 0 V,V DRNX = V CL(MIN)V CC1= V CC2= V DD= 0 V,ENA X= IN X= 0 V,V DRNX = V CL(MIN)−1.0– 1.0m A4.Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%parametrically tested in production.5.Guaranteed by design.Characteristic Symbol Conditions Min Typ Max UnitFault Detection – GAT X OFFDRN X Diagnostic Current I SG Short to GND Detection,V DRNX= 0.30 V CC1−27−20−10m AI OL Open Load Detection,V DRNX= 0.75 V CC1306080m A DRN X Fault Threshold Voltage V SG Short to GND Detection273033%V CC1V OL Open Load Detection727578%V CC1DRN X Off State Bias Voltage V CTR−–50–%V CC1 Gate Driver OutputsGAT X Output Resistance Output High or Low200350500W GAT X High Output Current V GATX = 0 V−26.25–−9.5mA GAT X Low Output Current V GATX = V CC29.5–26.25mATurn−On Propagation Delay t P(ON)IN X to GAT X (Figure 4)–– 1.0m sCSB to GAT X (Figure 5)Turn−Off Propagation Delay t P(OFF)IN X to GAT X (Figure 4)–– 1.0m sCSB to GAT X (Figure 5)Output Rise Time t R20% to 80% of V CC2,C LOAD = 400 pF(Figure 4, Note 5)––277nsOutput Fall Time t F80% to 20% of V CC2,C LOAD = 400 pF(Figure 4, Note 5)––277nsFault TimersChannel Fault Blanking Timer t BL(ON)V DRNX = 5.0 V; IN X rising toFLTB falling (Figure 6)112131m st BL(OFF)V DRNX = 0 V; IN X falling toFLTB falling (Figure 6)90120150m s Channel Fault Filter Timer t FF Figure 77.01217m sGlobal Fault Refresh Timer (Auto−retry Mode)t FR Register 2: Bit R2= 0 or R5= 07.51012.5ms Register 2: Bit R2 = 1 or R5 = 1304050msTimer Clock ENA1 = 1–500–kHzSerial Peripheral Interface (Figure 9) V ccx = 5.0 V, V DD = 3.3 V, F SCLK = 4.0 MHz, C LOAD = 200 pFSO Supply Voltage V DD 3.3 V Interface 3.0 3.3 3.6V5.0 V Interface 4.5 5.0 5.5VSCLK Clock Period−–250–nsMaximum Input Capacitance Sl, SCLK (Note 7)––12pFSCLK High Time SCLK = 2.0 V to 2.0 V125––nsSCLK Low Time SCLK = 0.8 V to 0.8 V125––nsSl Setup Time Sl = 0.8 V/2.0 V toSCLK = 2.0 V (Note 7)25––nsSl Hold Time SCLK = 2.0 V toSl = 0.8 V/2.0 V (Note 7)25––ns6.Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%parametrically tested in production.7.Guaranteed by design.Characteristic Symbol Conditions Min Typ Max UnitSerial Peripheral Interface (continued) (Figure 9) V ccx = 5.0 V, V DD = 3.3 V, F SCLK = 4.0 MHz, C LOAD = 200 pF–2550ns SO Rise Time(20% V SO to 80% V DD)C LOAD = 200 pF (Note 9)––50ns SO Fall Time(80% V SO to 20% V DD)C LOAD = 200 pF (Note 9)CSB Setup Time CSB = 0.8 V to SCLK = 2.0 V60––ns(Note 9)75––ns CSB Hold Time SCLK = 0.8 V to CSB = 2.0 V(Note 9)CSB to SO Time CSB = 0.8 V to SO Data Valid–65125ns(Note 9)–65125ns SO Delay Time SCLK = 0.8 V to SO Data Valid(Note 9)Transfer Delay Time CSB Rising Edge to Next1.0––m sFalling Edge (Note 9)8.Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%parametrically tested in production.9.Guaranteed by design.Figure 4. Gate Driver Timing Diagram – Parallel InputFigure 5. Gate Driver Timing Diagram – Serial InputFigure 6. Blanking Timing DiagramFigure 7. Filter Timing DiagramFigure 9. SPI Timing Diagram分销商库存信息: ONSEMINCV7517BFTR2G。

N07750是什么材料材质对应相关牌号

N07750是什么材料材质对应相关牌号

N07750是什么材料?N07750是什么材质? N07750是什么价格？──────────────────────────────────N07750高温合金带料，N07750高温合金管料，N07750高温合金板料，N07750高温合金棒料，N07750高温合金板材，N07750高温合金棒材，N07750高温合金带材，N07750高温合金管材，N07750高温合金卷板，N07750高温合金卷带，N07750高温合金卷材，N07750高温合金卷片，N07750高温合金薄板，N07750高温合金盘线，N07750高温合金扁条，N07750高温合金厚板，N07750高温合金锻件，N07750高温合金圆钢，N07750高温合金圆棒，N07750高温合金光圆，──────────────────────────────────N07750N07750 合金主要是以γ"[Ni3(Al、Ti、Nb)]相进行时效强化的镍基高温合金，在980℃以下具有良好的耐腐蚀和抗氧化性能，800℃以下具有较高的强度，540℃以下具有较好的耐松弛性能，同时还具有良好的成形性能和焊接性能。

该合金主要用于制造航空发动机在800℃以下工作并要求强度较高的耐松弛的平面弹簧和螺旋弹簧。

还可用于制造汽轮机涡轮叶片等零件。

可供应的品种有板材、带材、棒材、锻件、环形件、丝材和管材。

中文名N07750类型合金用途制造航空发动机可供应品种板材、带材、棒材、锻件N07750概述材料牌号N07750 相近牌号N07750(美国）,NiCr15Fe7TiAl(德国),NC15FeTNbA(法国),NCF750（日本）N07750 化学成分见表1-1。

板材、带材和管材为：Mn≤0.35%,Si≤0.35%。

N07750 热处理工艺板、带、管材供应状态的固溶热处理制度980℃±15℃，空冷。

材料及零件的中间热处理制度，可分别选择下列工艺进行热处理。

751说明书

751说明书

参考手册
00809-0106-4378， CE 版
第 1 节：简介
2014 年 2 月
第1节
简介
LCD 显示屏 . . . . 模拟仪表 . . . . . 服务支持 . . . . . 产品回收利用 / 处置 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 第3页 第4页 第5页 第5页
A 附录 A： 参考数据
A.1 外壳规格 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 A.1.1 物理规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 13 A.2 LCD 显示屏规格 . . . . . . . . . . . . . . . . . . . . . . . . . 14 A.2.1 功能规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 14 A.2.2 性能规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A.2.3 物理规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A.3 模拟仪表规格 . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 A.3.1 功能规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 16 A.3.2 性能规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 16 A.3.3 物理规格 . . . . . . . . . . . . . . . . . . . . . . . . . . 16 A.4 尺寸图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 A.5 订购信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
R7511中文资料

R7511中文资料

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K.PHOTOMULTIPLIER TUBES R7311, R7511Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: AnodeTPMS1038E02JUL. 1998 SIPrinted in Japan (500)VOLTAGE DISTRIBUTION RATIOBetween Anode and Cathode Between Each Succeeding Electrode Electrodes Ratio K Dy11Dy21Dy31Dy41Dy51Dy61Dy71Dy81Dy911P Figure 2: Typical Gain CharacteristicsTPMSB0088EBFigure 3: Dimensional Outline and Basing Diagram (Unit: mm)TPMSA0038EBTACCA0063EAParameter UnitSupply VoltageAverage Anode Current Ambient Temperature Vdc Vdc mA °CValue 12501500.01-80 to +50MAXIMUM RATINGS (Absolute Maximum Values)NOTE: R7311 at 200nm, R7511 at 121.6nm104103G A I NSUPPLY VOLTAGE (V)105106107108DY3DIRECTION OF LIGHTBOTTOM VIEW (BASING DIAGRAM)Socket (E678-11H)HAMAMATSU PHOTONICS K.K., Electoron Tube Center314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741。