QSE256;中文规格书,Datasheet资料

Serial NOR Flash Memory 1.8V , Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QU256ABAFeatures•SPI-compatible serial bus interface•Single and double transfer rate (STR/DTR)•Clock frequency –166 MHz (MAX) for all protocols in STR–90 MHz (MAX) for all protocols in DTR•Dual/quad I/O commands for increased through-put up to 90 MB/s•Supported protocols: Extended, Dual and Quad I/Oboth STR and DTR•Execute-in-place (XIP)•PROGRAM/ERASE SUSPEND operations•Volatile and nonvolatile configuration settings•Software reset•Additional reset pin for selected part numbers•3-byte and 4-byte address modes – enable memoryaccess beyond 128Mb•Dedicated 64-byte OTP area outside main memory–Readable and user-lockable–Permanent lock with PROGRAM OTP command•Erase capability–Bulk erase–Sector erase 64KB uniform granularity–Subsector erase 4KB, 32KB granularity•Erase performance: 400KB/sec (64KB sector)•Erase performance: 80KB/sec (4KB sub-sector)•Program performance: 2MB/sec•Security and write protection–Volatile and nonvolatile locking and softwarewrite protection for each 64KB sector–Nonvolatile configuration locking–Password protection–Hardware write protection: nonvolatile bits(BP[3:0] and TB) define protected area size–Program/erase protection during power-up–CRC detects accidental changes to raw data•Electronic signature–JEDEC-standard 3-byte signature (BB19h)–Extended device ID: two additional bytes identifydevice factory options•JESD47H-compliant–Minimum 100,000 ERASE cycles per sector–Data retention: 20 years (TYP)Options Marking •Voltage – 1.7-2.0V U •Density –256Mb 256•Device stacking –Monolithic A •Device generation B •Die revision A •Pin configuration –RESET# and HOLD#8•Sector size –64KB E •Packages – JEDEC-standard, RoHS-compliant –24-ball T-PBGA 05/6mm × 8mm (5 × 5 array)12–24-ball T-PBGA 05/6mm × 8mm (4 × 6 array)14–Wafer level chip-scale package, 23balls , 9 active balls (XFWLBGA 0.5P)55–16-pin SOP2, 300 mils (SO16W, SO16-Wide, SOIC-16)SF –W-PDFN-8 6mm × 5mm (MLP8 6mm × 5mm)W7–W-PDFN-8 8mm × 6mm (MLP8 8mm × 6mm)W9•Security features –Standard security 0•Special options –Standard S –Automotive A •Operating temperature range –From –40°C to +85°C IT –From –40°C to +105°C AT –From –40°C to +125°C UTCCMTD-1725822587-3458mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 1 Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Technology, Inc. All rights reserved.Products and specifications discussed herein are subject to change by without notice.Device DescriptionThe MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-ty, advanced write protection mechanisms, and extended address access. Innovative,high-performance, dual and quad input/output commands enable double or quadru-ple the transfer bandwidth for READ and PROGRAM operations.Figure 2: Block DiagramNote: 1.Each page of memory can be individually programmed, but the device is not page-eras-able.256Mb, 1.8V Multiple I/O Serial Flash Memory Device DescriptionCCMTD-1725822587-3458mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 9 Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Technology, Inc. All rights reserved.Package Dimensions – Package Code: 12Figure 9: 24-Ball T -PBGA (5 x 5 ball grid array) – 6mm x 8mmNotes: 1.All dimensions are in millimeters.2.See Part Number Ordering Information for complete package names and details.256Mb, 1.8V Multiple I/O Serial Flash Memory Package Dimensions – Package Code: 12CCMTD-1725822587-3458mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 18 Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Technology, Inc. All rights reserved.Serial Flash Discovery Parameter DataThe serial Flash discovery parameter (SFDP) provides a standard, consistent method to describe serial Flash device functions and features using internal parameter tables. The parameter tables can be interrogated by host system software, enabling adjustments to accommodate divergent features from multiple vendors. The SFDP standard defines a common parameter table that describes important device characteristics and serial ac-cess methods used to read the parameter table data.Micron's SFDP table information aligns with JEDEC-standard JESD216 for serial Flash discoverable parameters. The latest JEDEC standard includes revision 1.6. Beginning week 42 (2014), Micron's MT25Q production parts will include SFDP data that aligns with revision 1.6.Refer to JEDEC-standard JESD216B for a complete overview of the SFDP table defini-tion.Data in the SFDP tables is read by the READ SERIAL FLASH DISCOVERY PARAMETER operation.See TN-25-06: Serial Flash Discovery Parameters for MT25Q Family for serial Flash discovery parameter data.256Mb, 1.8V Multiple I/O Serial Flash Memory Serial Flash Discovery Parameter DataCCMTD-1725822587-3458mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 40 Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Technology, Inc. All rights reserved.。

READ MEMORY OperationsThe device supports default reading and writing to an A[MAX:MIN] of A[23:0] (3-byteaddress).Reading and writing to an A[MAX:MIN] of A[31:0] (4-byte address) is also supported. Se-lection of the 3-byte or 4-byte address range can be enabled in two ways: setting thenonvolatile configuration register or entering the ENABLE 4-BYTE ADDRESS MODE orEXIT 4-BYTE ADDRESS MODE commands. Further details for these settings and com-mands are in the respective register and command sections of the data sheet.Note: When the device is set to the default address range of A[23:0], another method forenabling 4-byte addressing is through the extended address register. Details can befound in Nonvolatile and Volatile Registers.3-Byte AddressTo execute READ MEMORY commands, S# is driven LOW. The command code is inputon DQ n, followed by input on DQ n of three address bytes. Each address bit is latched induring the rising edge of the clock. The addressed byte can be at any location, and theaddress automatically increments to the next address after each byte of data is shiftedout; therefore, the entire memory can be read with a single command. The operation isterminated by driving S# HIGH at any time during data output.Don’t CareDQ[0]C ExtendedDQ1Note: 1.C x = 7 + (A[MAX] + 1).READ MEMORY Operations Timing – Single Transfer RateFigure 32: SUBSECTOR and SECTOR ERASE CommandCDQ0CDQ0[1:0]CDQ0[3:0]Extended Dual QuadNote: 1.For extended SPI protocol, C x = 7 + (A[MAX] + 1).For dual SPI protocol, C x = 3 + (A[MAX] + 1)/2.For quad SPI protocol, C x = 1 + (A[MAX] + 1)/4.BULK ERASE Command质量等级领域:宇航级IC 、特军级IC 、超军级IC 、普军级IC 、禁运IC 、工业级IC ，军级二三极管，功率管等;应用领域:航空航天、船舶、汽车电子、军用计算机、铁路、医疗电子、通信网络、电力工业以及大型工业设备祝您:工作顺利，生活愉快!以深圳市美光存储技术有限公司提供的参数为例，以下为N25Q256A13EF840E的详细参数，仅供参考Figure 33: BULK ERASE CommandC DQ0C DQ[1:0]C DQ[3:0]ExtendedDualQuadPROGRAM/ERASE SUSPEND CommandTo initiate the PROGRAM/ERASE SUSPEND command, S# is driven LOW. The com-mand code is input on DQ0. The operation is terminated by the PROGRAM/ERASE RE-SUME command.PROGRAM/ERASE SUSPEND command enables the memory controller to interrupt and suspend an array PROGRAM or ERASE operation within the program/erase latency.If a SUSPEND command is issued during a PROGRAM operation, then the flag status register bit 2 is set to 1. After erase/program latency time, the flag status register bit 7 is also set to 1, showing the device to be in a suspended state, waiting for any operation (see the Operations Allowed/Disallowed During Device States table).If a SUSPEND command is issued during an ERASE operation, then the flag status regis-ter bit 6 is set to 1. After erase/program latency time, the flag status register bit 7 is also set to 1, showing that device to be in a suspended state, waiting for any operation (see the Operations Allowed/Disallowed During Device States table).If the time remaining to complete the operation is less than the suspend latency, the de-vice completes the operation and clears the flag status register bits 2 or 6, as applicable.Because the suspend state is volatile, if there is a power cycle, the suspend state infor-mation is lost and the flag status register powers up as 80h.During an ERASE SUSPEND operation, a PROGRAM or READ operation is possible in any sector except the one in a suspended state. Reading from a sector that is in a sus-pended state will output indeterminate data. The device ignores a PROGRAM com-mand to a sector that is in an ERASE SUSPEND state; it also sets to 1 the flag status reg-ister bit 4: program failure/protection error, and leaves the write enable latch bit un-changed. The WRITE LOCK REGISTER, WRITE VOLATILE CONFIGURATION REGIS-TER, and WRITE ENHANCED VOLATILE CONFIGURATION REGISTER commands are。