EEVHD1J100P中文资料
- 格式：pdf
- 大小：42.19 KB
- 文档页数：2
下载文档原格式
合集下载
清华紫光 文诚系列电脑 说明书
文诚系列技术培训手册清华紫光台式电脑事业部技术支持部2004-06-01目录一、产品特点1.1优良的品质保证1.2出色的结构设计1.3可靠的安全维护二、文诚系列主机配置2.1文诚系列主机配置表三、主板技术规格3.1 精英P6VEMD2主板说明3.2 精英L4S5MG/GX+主板说明3.3 技嘉GA-8I845GV-CH2说明四、驱动程序安装4.1驱动光盘说明4.2驱动程序安装目录一、产品特点文诚系列电脑强调性能价格比，适用于教育、网吧等中低端用户，便于集中管理，统一维护。
1.1优良的品质保证1）通过国家3C认证；2）严格的部件优选体制，所有部件采用业界一线厂商的产品；3）周密的测试全集，保证部件的兼容性，同时保证系统的稳定性；4）五年保修。
1.2出色的结构设计1）立卧两用，根据不同空间随意放置；2）机箱面板模块化设计，根据不同的应用选取不同外观；3）良好的散热设计，确保立卧使用时系统内部热量有效、及时的散发；4）静音设计，减少部件共振，优化风道，降低噪音。
1.3可靠的安全维护1）集成硬盘保护功能，保证硬盘数据的安全，遭到破坏一键恢复；2）同一机型间网络传输功能，维护好一台机器即可通过网络对其他机器进行维护；3）自动维护，无人值班的情况下对整个网络环境中的机器机型维护；4）预留机箱锁孔，防止非法开启机箱。
二、文诚系列主机配置（一）文诚500 文诚800 文诚1000E 文诚1100文诚1200 CPU C3800Celeron 1.8GCeleron 1.8G Celeron 1.8G Celeron 1.8G主板 P6VEMD2L4S5MG/GX+ L4S5MG/GX+ L4S5MG/GX+GA-8I845GV-CH2内存Twinmos 128MDDR333Twinmos 128MDDR333Twinmos 128MDDR333Twinmos 128MDDR333Twinmos 128MDDR333硬盘SeagateST340015ASamsungSV0411N(40GB/5400PRM)SeagateST340015ASamsungSV0411N(40GB/5400PRM)SeagateST340015ASamsungSV0411N(40GB/5400PRM)光驱LG CR-8523B LG GCR-8523B软驱SamsungSFD-321BSamsungSFD-321BSamsungSFD-321B显示卡主板集成主板集成主板集成主板集成主板集成声卡主板集成主板集成主板集成主板集成主板集成网卡主板集成主板集成主板集成主板集成主板集成电源长城 1801-HP 长城 1801-HP 长城 1801-HP 长城 1801-HP 长城 1801-HPCPU风扇主板集成Cool MasterDI4-7H53B/DI4-7H54A-R2Cool MasterDI4-7H53B/DI4-7H54A-R2Cool MasterDI4-7H53B/DI4-7H54A-R2/EC203MBCool MasterDI4-7H53B/DI4-7H54A-R2/EC203MB机箱保利得 EN7472 保利得 EN7472 保利得 EN7472 保利得 EN7472 保利得 EN7472键盘精模 JME7010 精模 JME7010 精模 JME7010 精模 JME7010 精模 JME7010鼠标致伸 M042K0 致伸 M042K0 致伸 M042K0 致伸 M042K0 致伸 M042K0驱动光盘智能驱动光盘V2.0智能驱动光盘V2.0智能驱动光盘V2.0/2.1智能驱动光盘V2.0文诚系列主机配置（二）三、主板技术规格3.1文诚500采用的主板是：精英P6VEMD2，采用VIA CLE266 CE / VT8235 CD 芯片组。
HDS VSP G1000系列产品介绍
HDS VSP G1000系列产品介绍目录第1章HDS VSP G1000产品介绍 (4)1.1概述 (4)1.2VSP G1000技术的技术优势 (6)1.2.1永续运行 (6)1.2.2高度灵活的基础架构 (6)1.2.3自动、智能的架构 (11)1.2.4统一存储 (11)1.2.5无中断数据迁移 (13)1.2.6VSP G1000水平扩展的基础架构 (16)1.3VSP G1000软件包 (17)1.3.1SVOS（存储虚拟化操作系统） (17)1.3.2HITACHI COMMAND SUITE DATA MOBILITY（数据移动和灵活性） (21)1.3.3Hitachi Command Suite Analytics(高级分析和监控软件包) (22)1.3.4Hitachi Local Replication（本地数据保护） (24)1.3.5Hitachi Remote Replication（远程数据保护） (26)1.3.6File Base（统一存储） (29)1.4VSP G1000产品技术指标 (32)1.4.1VSP G1000 规格: 主机端口 (32)1.4.2VSP G1000 规格: 可用性 (32)1.4.3VSP G1000 规格: 支持的操作系统 (33)1.4.4Hitachi Virtual Storage Platform G1000 规格: 物理特性 (34)1.4.5Hitachi Virtual Storage Platform G1000 规格: 软件 (35)1.5外接存储系统兼容列表（存储虚拟化） (38)1.5.1HDS (38)1.5.2ATDX (39)1.5.3Data Direct Networks (39)1.5.4Dell (39)1.5.5EMC (39)1.5.6Fujitsu (40)1.5.7Gateway (40)1.5.8HP (41)1.5.9IBM (41)1.5.10NetApp (42)1.5.11Nexsan Technologies (42)1.5.12Pillar Data Systems (42)1.5.13SGI (43)1.5.14Sun Microsystems (43)1.5.15Xiotech (43)1.5.16X-IO (44)1.6VSP G1000 场地准备要求 (44)1.6.1VSP G1000环境要求 (44)1.6.2VSP G1000 电源要求 (45)1.6.3VSP G1000 模块装配图示 (47)1.6.4VSP G1000 控制器图示 (49)1.6.5VSP G1000 设备尺寸 (50)1.6.6机柜及服务空间 (50)第1章HDS VSP G1000产品介绍1.1概述如今，数据中心的运营耗费了大量的人力，这通常会阻碍IT团队与不断变化的业务需求保持同步发展。
FQD17P06中文资料
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -8.5 A, RG = 25 Ω
--
13
35
ns
-- 100 210 ns
--
22
55
ns
(Note 4, 5)
--
60 130 ns
VDS = -48 V, ID = -17 A,
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
VDS = -48 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
--
IGSSR
Features
• -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
EPICF10050547NS中文资料(PCA Electronics)中文数据手册「EasyDatasheet - 矽搜」
5.6 6.8 8.2
10.0 12.0 15.0
18.0 22.0 27.0
33.0 39.0 47.0
56.0 68.0 82.0
100.0 1.5 1.8
2.2 2.7 3.3
3.9 4.7 5.6
6.8 8.2 10.0
12.0 15.0 18.0
22.0 27.0 33.0
39.0 47.0 56.0
68.0 82.0
Q
（最低）
100
8
11
8
11
8
11
8
11
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
11
8
11
8
11
8
11811来自8118
11
8
11
8
14
8
14
8
14
8
10
8
12
10
13
10
14
10
13
10
13
10
14
10
14
10
14
12
14
12
14
12
15
12
15
12
16
12
16
12
17
12
18
12
17
12
17
12
18
12
18
12
18
10
21
10
18
10
18
12
10.0 12.0 15.0
18.0 22.0 27.0
33.0 39.0 47.0
56.0 68.0 82.0
100.0 1.5 1.8
2.2 2.7 3.3
3.9 4.7 5.6
6.8 8.2 10.0
12.0 15.0 18.0
22.0 27.0 33.0
39.0 47.0 56.0
68.0 82.0
Q
（最低）
100
8
11
8
11
8
11
8
11
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
10
8
11
8
11
8
11
8
11811来自8118
11
8
11
8
14
8
14
8
14
8
10
8
12
10
13
10
14
10
13
10
13
10
14
10
14
10
14
12
14
12
14
12
15
12
15
12
16
12
16
12
17
12
18
12
17
12
17
12
18
12
18
12
18
10
21
10
18
10
18
12
ECEV1HA220P中文资料
6KHOI /LIH
5HVLVWDQFH WR 6ROGHULQJ +HDW
$IWHU VWRUDJH IRU KRXUV DW °& ZLWK QR YROWDJH DSSOLHG DQG WKHQ EHLQJ VWDELOL]HG DW °& FDSDFLWRUV VKDOO PHHW WKH OLPLWV VSHFLILHG LQ (QGXUDQFH :LWK YROWDJH WUHDWPHQW $IWHU UHIORZ VROGHULQJ 5HIHU WR SDJH 86 IRU UHFRPPHQGHG WHPSHUDWXUH SURILOH DQG WKHQ EHLQJ VWDELOL]HG DW °& FDSDFLWRU VKDOO PHHW WKH IROORZLQJ OLPLWV &DSDFLWDQFH FKDQJH RI LQLWLDO PHDVXUHG YDOXH LQLWLDO VSHFLILHG YDOXH WDQ δ LQLWLDO VSHFLILHG YDOXH '& OHDNDJH FXUUHQW
6L]H FRGH $ % & ' ' ( ) *
'
/
. WR WR WR WR WR WR
:KLFKHYHU LV JUHDWHU
(QGXUDQFH
:9 9 ,PSHGDQFH UDWLR °& DW +] °& $IWHU DSSO\LQJ UDWHG ZRUNLQJ YROWDJH IRU KRXUV DW °& DQG WKHQ EHLQJ VWDELOL]HG DW °& FDSDFLWRUV VKDOO PHHW WKH IROORZLQJ OLPLWV RI LQLWLDO VSHFLILHG YDOXH WDQ δ &DSDFLWDQFH FKDQJH RI LQLWLDO PHDVXUHG YDOXH 6L]H FRGH 5DWHG :9 &DS FKDQJH '& OHDNDJH FXUUHQW LQLWLDO VSHFLILHG YDOXH $ φ WR :9 ,QLWLDO PHDVXUHG $ φ WR ' φ :9 YDOXH IRU :9 ' φ 0LQLDWXUH KRXUV ! :9
AEC-Q100 G 中文版
基于集成电路应力测试认证的失效机理内容列表AEC-Q100 基于集成电路应力测试认证的失效机理附录1：认证家族的定义附录2：Q100设计、架构及认证的证明附录3：邦线测试的塑封开启附录4：认证计划和结果的最低要求附录5：决定电磁兼容测试的零件设计标准附录6：决定软误差测试的零件设计标准附件AEC-Q100-001 邦线切应力测试AEC-Q100-002 人体模式静电放电测试AEC-Q100-003 机械模式静电放电测试AEC-Q100-004 集成电路闩锁效应测试AEC-Q100-005 可写可擦除的永久性记忆的耐久性、数据保持及工作寿命的测试 AEC-Q100-006 热电效应引起的寄生闸极漏电流测试AEC-Q100-007 故障仿真和测试等级AEC-Q100-008 早期寿命失效率（ELFR）AEC-Q100-009 电分配的评估AEC-Q100-010 锡球剪切测试AEC-Q100-011 带电器件模式的静电放电测试AEC-Q100-012 12V系统灵敏功率设备的短路可靠性描述感谢任何涉及到复杂技术的文件都来自于各个方面的经验和技能，为此汽车电子委员会由衷承认并感谢以下对该版文件有重要贡献的人：固定会员：准会员：特邀会员：其他支持者：注意事项AEC文件中的材料都是经过了AEC技术委员会所准备、评估和批准的。
AEC文件是为了服务于汽车电子工业，无论其标准是用在国内还是国际上，都可排除器件制造商和采购商之间各方面的不一致性，推动产品的提高和可交换性，还能帮助采购商在最小的时间耽搁内选择和获得来自那些非AEC成员的合适的产品。
AEC文件并不关注其采纳的内容是否涉及到专利、文章、材料或工艺。
AEC 没有认为对专利拥有者承担责任，也没有认为要对任何采用AEC文件者承担义务。
汽车电子系统制造商的观点主要是AEC文件里的信息能为产品的说明和应用提供一种很完美的方法。
如果没有在本文件见到所陈述的要求，就不能声称与本文件具有一致性。
华硕Eeepad
华硕Eeepad产品规格显示屏 10.1英寸 LED 背光 WXGA (1280x800) 液晶屏 *1 10指多点电容式触控屏 康宁钢化玻璃表面中央处理器NVIDIA® Tegra™ 2 内存1GB 存储功能16GB 华硕webstorage 网络存储空间(1年无上限使用)*2 无线连接WLAN 802.11 b/g/n 蓝牙 V2.1+EDR 摄像头 前置120 万像素摄像头 后置500 万像素摄像头音效立体声扬声器SRS Premium Sound 高品质麦克风接口1 x 2合1音频插孔(耳机/麦克风) 1 x mini HDMI 1.3a接口1 x 读卡器(支持Micro SD)感应器陀螺仪光线感应重力感应E-Compass GPS应用程序支持多任务处理: 支持支持Flash : 支持*3软件*5 :- 华硕Launcher- MyLibrary- MyNet- MyCloud*4- File manager- PC Sync- 腾讯QQ for Pad- 腾讯快报- 人人网- 奇艺视频- 同花顺炒股软件- 淘宝网- 支付宝- 大卖票务- Polaris Office电池9.5小时; 24.4Wh锂电池组*616小时，搭配专属Eee键盘底座*6尺寸271 x 177 x 12.98 mm (长x宽x高) 重量680 g移动底座旗舰版附带移动底座，标准版不附带。
触控板2 x USB 2.02 x 底座接口(主机端+ 客户端)1 x 读卡器(MMC/SD/SDHC/SDXC)1 x 24.4Wh电池组备注*1: IPS面板，178°广视角*2: 华硕Webstorage 网络存储空间(1年无上限使用). 请访问 了解更多信息。
*3: Adobe® Flash® 10.2需进行在线升级，可从安卓市场下载或可通过华硕的后续版本进行更新。
*4: My Cloud 将会在四月中旬之后发布并通过FOTA 进行更新。
应用手册：逆相电源扩展器PE500说明书
PE500, ILLUMATECH IP710, REVERSE PHASE DIMMED FIXTURES
UL924 BYPASS, PE500, ILLUMATECH IP710, REVERSE PHASE DIMMED FIXTURES
PE500, RENOIR II, REVERSE PHASE DIMMED FIXTURES
ABBREVIATIONS LC Luma-CAN LV Low Voltage HV High Voltage Switch (Maintained) LVM Low Voltage Switch (Momentary)
Equal to Leviton: 1081 (Toggle) or 56081 (Decora) LVT Low Voltage Switch (Maintained) Equal to Leviton: 12021-2 (Toggle) or 56021-2 (Decora) LV2 IRC Low Voltage Switch Equal to Leviton: RLVSW-1LW (1 button) or RLVSW-2LW (2 button) or RLVSW-4LW (4 button)
5. Line voltage load not to exceed contact rating per device specifications.
6. Power packs receiving separate feeds for switched loads and self power must have both feeds on the same phase
22. Control Receptacle: • Quantity per applicable codes • Termination shown split receptacle. Termination per applicable codes. • Receptacle markings per applicable energy codes
中兴内部培训资料设备介绍
添加标题
避免长时间使用，防止设备过热
正确操作设备，避免误操作导致 设备损坏
专业维修保养
定期检查：定期对设备进 行性能检查和维护
清洁保养：定期对设备进 行清洁和保养，保持设备 清洁和良好状态
故障处理：及时发现和处 理设备故障，确保设备正 常运行
更换配件：定期更换设备 配件，确保设备性能稳定
培训员工：定期对员工进 行设备维修保养培训，提 高员工技能水平
PART 1
中兴内部培训资料设备种类
投影仪
品牌：中兴
型 号 ： Z T E - PJ 1 0 0 特点：高清投影，支持1080P分辨 率
功能：支持无线投屏，可连接手机、 电脑等设备进行投影
应用场景：会议室、培训室、教室 等
价格：根据不同配置和功能，价格 在2000-5000元之间
电脑
品牌：中兴 型号：ZTE-PC100 性能：搭载Intel Core i5处理器，8GB内存，256GB SSD硬盘 特点：轻薄便携，续航时间长，适合移动办公和学习使用
色彩还原：色彩准确，能够真实还原图像和视频的色彩 宽视角：采用宽视角设计，让不同位置的观众都能获得良好的视觉体 验 防眩光：采用防眩光设计，减少反光和眩光，提高观看舒适度
降低成本
设备采购成本降低：中兴内部培训资料设备采用集团采购模式，降低设备 采购成本。
维护成本降低：中兴内部培训资料设备采用模块化设计，便于维护，降低 维护成本。
设备操作简单， 易于上手，降低 培训难度
易于操作
界面简洁明了， 易于理解
功能分类清晰， 易于查找
操作步骤简单， 易于上手
提供在线帮助， 易于解决问题
适应性强
设备种类丰富， 满足不同培训需 求
DNV-OS-F101汉语版03
（ 12.6）
F600 压力允许量标准，偶然压力超出设计压力不超过 10％
COOEC----安装公司工程技术中心----乔胜虎
DNV 海底管线规范 2000 版
决定壁厚地控制压力是局部的偶然压力。管道系统应当有一个压力控制系统，它能够 保证在管道的生命期内，在系统的任何一点超过局部偶然压力的概率很低。如果在偶然压力 超过设计压力达到 10％的情况下，仍能够满足上述条件，此时的管壁厚度就可以使用。
如果偶然压力不超过设计压力，比如用到了完全关断压力，偶然压力就可以减小设计 压力，参见表 3－1。
不同的系统对设计压力和偶然压力有不同的定义，比如在管道顶部和管线系统。如果 将设计压力从一个系统转换到另一个系统，转换就应当基于此压力每年超过的概率小于 10－ 4 的原则。这个压力就可被定义为管道系统的偶然压力。设计压力就应当按照上述原则决定。 E300 柱形构件周围的流体速度
COOEC----安装公司工程技术中心----乔胜虎
DNV 海底管线规范 2000 版
( ) ( ) pli − pe
⋅ D − t1 ≤ 2 ⋅ t1
2 ⋅αU 3 ⋅γ m ⋅ γ sc
⋅
SMYS
−
f y,temp
（ 12.1）
这个压力差是以局部偶然压力的函数给出。介绍一个荷载因子，?inc，反映了偶然压力 和设计压力的比，这个公式能够依照水面上的参考点调整，由等式（12.2）给出。
除了需要检查弹性屈曲，薄管比其它管道更易受缺陷影响。我们应当作如下特殊考虑： ——围焊和围焊处的错位 ——集中荷载，比如点支撑 如果在有效范围内证明了弹性屈曲不会发生，并且缺陷被认为是可以接受的，标准就 可以延伸到 D/t=60。 F900 局部屈曲——围焊因子 管道包括围焊的研究表明围焊对管道的压应变能力有很大的影响，参见 Ghodsi et al （1994）。当 D/t＝60 时曾经发现有 40％的减少。对于 D/t 取更小的值时围焊的影响，我们 没有已知的试验数据。 有人假设这有害的效应是因为屈曲的发生，而屈曲的发生又是因为在受压边焊接的缺 陷造成的。如果这是对的话，对于较高的 D/t 值，此效应就被过于夸大了。应当用检测或者 有限元计算来得到围焊因子。 如果没有其它资料并且假定减少是由于受压边的错位，那么在 D/t＝20 时，此降低就可 以忽略不记。其余的可由 D/t＝60 用内插法得到。 如果没有其它的资料，下面的建议采用下面的围焊因子。
GE G100数码相机 说明书
使用各种模式................................................... 18
显示设定..................................................................................... 18 LCD屏幕显示图........................................................................ 19
境下，否则可能会缩短照相机的寿命或损坏电池。 • 请勿在充满灰尘、脏污或沙土的地方使用或存放照
相机，否则可能会使零件损伤。 • 请勿将镜头长时间暴露于阳光直射下。 • 在长时间收藏本照相机前，请先下载照片并取出电
池。
• 请勿使用有侵蚀性、含酒精或有机溶剂的清洁剂清 洁照相机机身；请用专业镜头擦拭纸配合镜头专用 清洁剂擦拭镜头。
商标 本文件内所使用的所有商标均用于辨别之用，并可能 为其所属拥有者的财产。
安全资讯
使用产品前请先阅读以下重要资讯：
• 请勿试图自行将数码照相机拆解或维修。 • 请勿重摔或敲打照相机，不当的处理可能会损伤照
相机。 • 装入或取出电池与存储卡之前，请先将照相机电源
关闭。 • 请勿触摸照相机镜头。 • 请勿将照相机暴露于潮湿、低温或高温等恶劣的环
欧洲使用者 "CE"标志表示本产品符合欧洲的安全、健康、 环境、与客戶保护需求。标示有"CE"标志的照
相机可用于欧洲销售。
本WEEE回收筒图示表示在欧盟国家要分别回收 电子电气废弃物。请勿将设备丟入家庭废弃物 中。要进行丟弃时，请利用您当地的本产品回收 系统。
一致性宣告
显示设定..................................................................................... 18 LCD屏幕显示图........................................................................ 19
境下，否则可能会缩短照相机的寿命或损坏电池。 • 请勿在充满灰尘、脏污或沙土的地方使用或存放照
相机，否则可能会使零件损伤。 • 请勿将镜头长时间暴露于阳光直射下。 • 在长时间收藏本照相机前，请先下载照片并取出电
池。
• 请勿使用有侵蚀性、含酒精或有机溶剂的清洁剂清 洁照相机机身；请用专业镜头擦拭纸配合镜头专用 清洁剂擦拭镜头。
商标 本文件内所使用的所有商标均用于辨别之用，并可能 为其所属拥有者的财产。
安全资讯
使用产品前请先阅读以下重要资讯：
• 请勿试图自行将数码照相机拆解或维修。 • 请勿重摔或敲打照相机，不当的处理可能会损伤照
相机。 • 装入或取出电池与存储卡之前，请先将照相机电源
关闭。 • 请勿触摸照相机镜头。 • 请勿将照相机暴露于潮湿、低温或高温等恶劣的环
欧洲使用者 "CE"标志表示本产品符合欧洲的安全、健康、 环境、与客戶保护需求。标示有"CE"标志的照
相机可用于欧洲销售。
本WEEE回收筒图示表示在欧盟国家要分别回收 电子电气废弃物。请勿将设备丟入家庭废弃物 中。要进行丟弃时，请利用您当地的本产品回收 系统。
一致性宣告
FGP10D-E354;FGP10BHE354;FGP10CHE354;FGP10DHE354;FGP10B-E354;中文规格书,Datasheet资料
Document Number: 88876For technical questions within your region, please contact one of the following: Glass Passivated Ultrafast RectifierFGP10B thru FGP10DVishay General SemiconductorFEATURES•Superectifier structure for high reliability condition•Cavity-free glass-passivated junction •Ideal for automated placement •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets environmental standard MIL-S-19500•Solder dip 275 °C max. 10 s, per JESD 22-B106•AEC-Q101 qualified•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.MECHANICAL DATACase: DO-204AL, molded epoxy over glass bodyMolding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode endPRIMARY CHARACTERISTICSI F(AV) 1.0 A V RRM 100 V to 200 VI FSM 30 A t rr 35 ns V F 0.95 V I R 2.0 μA T J max.175 °CDO-204AL (DO-41)SUPERECTIFIER ®MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL FGP10B FGP10C FGP10D UNIT Maximum repetitive peak reverse voltage V RRM 100150200V Maximum RMS voltage V RMS 70105140V Maximum DC blocking voltageV DC 100150200V Maximum average forward rectified current 0.375" (9.5 mm) lead length at T A = 55 °CI F(AV) 1.0A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30A Operating junction and storage temperature rangeT J , T STG- 65 to + 175°C For technical questions within your region, please contact one of the following:Document Number: 88876FGP10B thru FGP10DVishay General SemiconductorNote(1)Pulse test: 300 μs pulse width, 1 % duty cycleNote(1)Units mounted on PCB 10 mm x 10 mm copper padsNote(1)AEC-Q101 qualifiedRATINGS AND CHARACTERISTICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL FGP10BFGP10C FGP10DUNIT Maximum instantaneous forward voltage1.0 AV F (1)0.95V Maximum DC reverse current at rated DC blocking voltageT A = 25 °C I R (1) 2.0μA T A = 100 °C50Maximum reverse recovery time I F = 0.5 A, IR = 1.0 A,I rr = 0.25 A t rr 35ns Typical junction capacitance4.0 V, 1 MHzC J25pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL FGP10BFGP10C FGP10DUNIT Maximum thermal resistanceR θJA (1)70°C/WR θJL (1)20ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEFGP10D-E3/540.3054550013" diameter paper tape and reelFGP10D-E3/730.30733000Ammo pack packaging FGP10DHE3/54 (1)0.3054550013" diameter paper tape and reelFGP10DHE3/73 (1)0.30733000Ammo pack packagingDocument Number: 88876For technical questions within your region, please contact one of the following: FGP10B thru FGP10DVishay General SemiconductorFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction CapacitanceFig. 6 - Typical Transient Thermal ImpedancePACKAGE OUTLINE DIMENSIONS in inches (millimeters)Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTORFGP10D-E3/54FGP10BHE3/54FGP10CHE3/54 FGP10DHE3/54FGP10B-E3/54FGP10C-E3/54 FGP10BHE3/73FGP10CHE3/73FGP10DHE3/73。
EEM101-单相计量模块说明书
二 模块功能接口介绍
1 模块整体模型图
3 4 5 6 7 8 9 0 1 2 3 4 1 1 1 1 1 1 1 2 2 2 2 2 - + L C C C C C C I N D I V N N N N N N V N CCV G 板 心 核 相 单 D D N D D 3 2 1 0 1XT 1XR R 0XT 0XR P P P P TABV G V 9 8 7 6 5 4 3 2 1 2 1 0 1 1 1
参考地 数字电源地
----
空引脚。推荐：悬空
三 模块硬件设计参考电路
1 模块整体硬件设计模型图
EEM301 系列多功能高精三相专用计量模块硬件设计主要包括：电源 电路设计，通信电路设计，电压，电流采样电路设计三个电路设计为 主要设计方向。 EEM301 系列模块整体参考电路设计如下图：
硬件设计整体电路
三 模块硬件设计参考电路............................................................................................................. 6 1 模块整体硬件设计模型图................................................................................................... 6 2 电源电路设计....................................................................................................................... 7 3 485 通信电路设计.............................................................................................................. 8
HVP101-D050E中文资料
-49-H HiTRONUNIVERSAL INPUT HARMONIC CORRECTION AC-DC OPEN FRAME SINGLE & MULTIPLE OUTPUT 100 WATTS INTERNAL SWITCHING POWER SUPPLIES HVP101 SERIESFEATURES:ACCOMMODATE UNIVERSAL AC SOURCES PCB VERSION FORMATMEET IEC1000-3-2 HARMONIC CORRECTION MEET UNIVERSAL SAFETY STANDARDS EMI MEET CISPR PUB. 22 & FCC CLASS B CE MARKING COMPLIANCEGENERAL SPECIFICATIONEfficiency: Typ. 75-80%.Switching Frequency: PFC ckt. 75K Hz.PWM ckt. 170-180K Hz.Circuit Topology: Fixed frequency forward circuit. Transient Response: Output voltage returns inless than 0.3mS following a 25% load change.Safety Standard: IEC950/UL1950 Class I.Operating Temperature: 0 to +50°C under forced airflow for full load.Storage Temperature: -20 to +85°C. Temperature Coefficient: 0.04% /°C.Cooling: At least 30 cfm direct forward air flow isrequired to achieve full rating power.Construction: PCB format.Power Density: 5.6 Watts / Cubic Inch.In applicationSPECIFICATIONINPUT SPECIFICATIONInput Voltage: Typ. 90-264Vac with PFC. Input Connector: V-M connector & GND tag. Input Frequency: 47-63Hz.Inrush Current: Typ. 29A@230Vac.Input Current: Typ. 1.3A @115Vac, 0.65A @230Vac. Dielectric Withstand: Meet IEC950.EMI: Meet CISPR EN55022 B & FCC Class B. Hold-up Time: Typ. 18-25mS @ 115Vac & 230Vac. Power Factor & Harmonic Correction:Meet IEC1000-3-2, PF typ. 0.97-0.99 @ full load. Power OK: Installed in VO1 & VO2.Over Temperature Protection (OTP): By NTC at quadoutput only.Earth Leakage: Less than 0.75mA @230Vac.OUTPUT SPECIFICATIONOutput Voltage: See Ratings Chart. Output Current: See Ratings Chart. Output Connector: V-M connector. Output Wattage: Typ. 100 Watts. Line Regulation: Typ. 0.1%.Load Regulation: Main VO1 typ. ±1-2%.Aux. VO2 typ. ±1-2% (Magnetic Amp.). Aux. VO3 typ. ±1-2% (Magnetic Amp.). Aux. VO4 typ. ±2-3% (P.R.).Noise & Ripple: Typ. 1% peak to peak.OVP: Built-in at main VO1 & Aux.VO2 & VO3 (latch). Remote Sensing: Available at VO1 & VO2. Adjustability: Available at VO1,VO2 & VO3. Over Current Protection: Built-in at all output.Overload Protection (OLP): Fully protected againstoutput overload and short circuit at any output. Consult the factory for OLP setting.OUTPUT VOLTAGE / CURRENT RATINGS CHARTMECHANICAL DIMENSIONS:MM [INCHES] WEIGHT: 368.0g(12.97 Oz.)INPUT & OUTPUT CONNECTORS PIN ASSIGNMENTSAC INPUT SINGLE OUTPUT DUAL OUTPUT QUAD OUTPUTASSIGNMENT L N GND VO1DCCOM+VO1# P.OK VO1 VO2DCCOM+VO1 # +VO2 # P.OK VO1DCCOMVO2 VO3 VO4 VO1+ # VO2+ # VO1,2- # P. OKCONNECTOR & PIN #P1-3 P1-1 TabP2-6,7,8,9,10,11P2-1,2,3,4,5P2-13 P2-14P2-9,10,11P2-6,7,8P2-1,2,3,4P2-13 P2-12 P2-14P2-1,2,3,4P2-5,67,8P2-9,10 P2-11 P2-12 P3-3 P3-4 P3-1 P3-2DUAL OUTPUT (Under forced air flow)MAIN VO1 ★@#AUX. VO2 ▲#MODEL NO.Typ. Volt.Typ. Volt.HVP101-D050E 12.0A +5.0V 6.0A +5.0VHVP101-D050I 12.0A +5.0V 4.0A +12.0VHVP101-D050K 12.0A +5.0V 3.0A +15.0VHVP101-D050D 12.0A +5.0V8.0A +3.3VHVP101-D033I 15.0A +3.3V 4.0A +12.0VHVP101-D033K 15.0A +3.3V 3.0A +15.0VSINGLE OUTPUT (Under forced air flow)MAIN VO1 ★@#MODEL NO.Typ.Volt. PeakHVP101-S033200 20.0A 3.3V25.0AHVP101-S050160 16.0A 5.0V20.0AHVP101-S120085 8.5A 12.0V 9.0AHVP101-S150068 6.8A 15.0V 7.0AHVP101-S240042 4.2A 24.0V 6.0AHVP101-S280036 3.6A 28.0V 5.0AHVP101-S360028 2.8A 36.0V 4.0AHVP101-S480021 2.1A 48.0V 3.0AQUAD OUTPUT (Under forced air flow)MAIN VO1 ★@# AUX.VO2★@▲# AUX.VO3★@▲AUX. VO4 ●MODEL NO.Typ. Volt Typ. Volt Typ. Volt Typ. Volt HVP101-Q050DII 12.0A +5.0V 6.0A + 3.3V 1.5A +12V 0.5A -12V HVP101-Q050DIE 12.0A +5.0V 7.0A + 3.3V 1.5A +12V 0.5A - 5V HVP101-Q050MII 10.0A +5.0V 1.5A +24.0V 1.5A +12V 0.2A -12V HVP101-Q050KIE 10.0A +5.0V 2.5A +15.0V 1.5A +12V 0.4A - 5V HVP101-Q050KII 8.0A +5.0V 2.5A +15.0V 2.0A +12V 0.2A -12V Symbol: "★" OVP built-in. "@" Adjustable. "#" Remote sense. "●" Installed with Post Regulator. "▲" Installed with magnetic amplifier. Remark: Peak output, less than 60 Sec. with 10% duty cycle.-50-。
電熱水器-GPU-6.5E GPU-10E-使用手冊-中文说明书
GPU-6.5E GPU-10E不銹鋼內膽Stainless Steel Inner Tank 採用長期耐高溫及受高壓容器專用之日本特殊不銹鋼製造，內膽結構堅固，保證防銹、耐壓及不受水質侵蝕。
Constructed of Japanese heavy gauge stainless steel, specially made for high temperature and pressure applications. It is durable and free of rust, corrosion, deformity and hassle.保溫Thermal Insulation 完密噴注式保溫層，採用高密度合成樹脂纖維絕熱法保持溫度，失溫程度達至最低，保持熱水溫度。
Maximum thermal insulation is achieved by high-density polyurethane foam injection moulded between the inner tank and outside casing.發熱管Heating Element 原廠優質不銹鋼發熱管，備有獨立不同功率，符合各種不同之熱水要求。
Prime quality stainless steel heating element ensures maximum thermal efficiency even in places where different voltage applices.來水要求Water Supply Source 直接自來水供應或水箱供應均可。
Main supply or water tank supply.額定壓力Rated Pressure1.0 MPa最大來水壓力Max. Inlet Water Pressure0.6 MPa超溫感應Temperature Relief 水溫達到90℃時，超溫感應排放閥門便會自動打開。
EEH-ZA1V470P,EEH-ZA1V470P,EEH-ZA1V470P,EEH-ZA1E101XP,EEH-ZA1E101XP, 规格书,Datasheet 资料
Example:25 V 33 µF Marking color : BLACK
Negative polarity marking (–)
■ Dimensions in mm (not to scale)
–
φD±0.5 B±0.2 H (I) (I) ( ) Reference size (mm) Size code 25 V 35 V 50 V 63 V (P) W K 0.3 max. A±0.2
Endurance
After storage for 1000 hours at +105 °C±2 °C with no voltage applied and then being stabilized at +20 °C, capacitors shall meet the limits specified in Endurance. (With voltage treatment) After reflow soldering and then being stabilized at +20 °C, capacitors shall meet the following limits. Capacitance change tan δ DC leakage current ±10 % of initial measured value < initial specified value < initial specified value
C 5.0 5.8±0.3 5.3 D 6.3 5.8±0.3 6.6 D8 6.3 7.7±0.3 6.6 F 8.0 10.2±0.3 8.3 G 10.0 10.2±0.3 10.3
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately.
Negative polarity marking (–)
■ Dimensions in mm (not to scale)
–
φD±0.5 B±0.2 H (I) (I) ( ) Reference size (mm) Size code 25 V 35 V 50 V 63 V (P) W K 0.3 max. A±0.2
Endurance
After storage for 1000 hours at +105 °C±2 °C with no voltage applied and then being stabilized at +20 °C, capacitors shall meet the limits specified in Endurance. (With voltage treatment) After reflow soldering and then being stabilized at +20 °C, capacitors shall meet the following limits. Capacitance change tan δ DC leakage current ±10 % of initial measured value < initial specified value < initial specified value
C 5.0 5.8±0.3 5.3 D 6.3 5.8±0.3 6.6 D8 6.3 7.7±0.3 6.6 F 8.0 10.2±0.3 8.3 G 10.0 10.2±0.3 10.3
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately.
EEEFK0J101P中文资料
(V)(Ω)6.31610252247100220330470100015003300680022331502203304706801000220047006800102247681001502203304706801500330047001022B BC CD D D8EF F GH 13J16B B C D D8E F F F GH13J16K16B B C C D D D D8D8E F F GH13J16K16B C90901601602402402803006006008501100180090901602402803006006006008501100180020609090160160240240240280280300600600850110018002060901601.351.350.700.700.360.360.340.260.160.160.080.060.0351.351.350.700.360.340.260.160.160.160.080.060.0350.0331.351.350.700.700.360.360.360.340.340.260.160.160.080.060.0350.0331.350.7EEVFK0J220R EEVFK0J470UR EEVFK0J470R EEVFK0J101UR EEVFK0J101P EEVFK0J221P EEVFK0J331XP EEVFK0J331P EEVFK0J471P EEVFK0J102P EEVFK0J152PEEVFK1A220R EEVFK1A330UR EEVFK1A330R EEVFK1A151P EEVFK1A221XP EEVFK1A221P EEVFK1A331P EEVFK1A471P EEVFK1A681P EEVFK1A102PEEVFK1C100R EEVFK1C220UR EEVFK1C220R EEVFK1C470UR EEVFK1C470P EEVFK1C680P EEVFK1C101P EEVFK1C151XP EEVFK1C221XP EEVFK1C221P EEVFK1C331P EEVFK1C471P EEVFK1C681PEEVFK1E100R EEVFK1E220R20002000100010001000100090010005005005002001252000200010001000900100050050050050020012512520002000100010001000100010009009001000500500500200125125200010000.260.260.260.260.260.260.260.260.260.260.260.300.360.190.190.190.190.190.190.190.190.190.190.210.250.290.160.160.160.160.160.160.160.160.160.160.160.160.160.160.200.220.140.14Standard Productsn (µF)(m m )(m m )(m A )Part No.(RoHS:not compliant)SpecificationDia.Length TapingCase sizeCap.(±20%)W.V.Ripple current (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance(100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)44556.36.36.38881012.5164456.36.388881012.5161844556.36.36.36.36.38881012.51618455.85.85.85.85.85.87.76.210.210.210.213.516.55.85.85.85.87.76.210.210.210.210.213.516.516.55.85.85.85.85.85.85.87.77.76.210.210.210.213.516.516.55.85.8Endurance: 2000 to 5000h at 105°CPart No.(RoHS:compliant)EEEFK0J220R EEEFK0J470UR EEEFK0J470R EEEFK0J101UR EEEFK0J101P EEEFK0J221P EEEFK0J331XP EEEFK0J331P EEEFK0J471P EEEFK0J102P EEEFK0J152PEEVFK0J332Q EEVFK0J682MEEEFK1A220R EEEFK1A330UR EEEFK1A330R EEEFK1A151P EEEFK1A221XP EEEFK1A221P EEEFK1A331P EEEFK1A471P EEEFK1A681P EEEFK1A102PEEVFK1A222Q EEVFK1A472M EEVFK1A682MEEEFK1C100R EEEFK1C220UR EEEFK1C220R EEEFK1C470UR EEEFK1C470P EEEFK1C680P EEEFK1C101PEEEFK1C151XP EEEFK1C221XP EEEFK1C221P EEEFK1C331P EEEFK1C471P EEEFK1C681PEEVFK1C152Q EEVFK1C332M EEVFK1C472MEEEFK1E100R EEEFK1E220RReflowReflow(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(1)(1)(1)(2)(2)(2)(2)(2)(1)(1)(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(4)(4)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(4)(4)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(4)(4)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Endurance: 2000 to 5000h at 105°CStandard Productsn(µF)(m m )(m m )(m A )Part No.(RoHS:not compliant)SpecificationDia.LengthTapingCase sizeCap.(±20%)W.V.Ripple current (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance(100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)(Ω)503347681001502203304701000220033004.71022334768100150220330470680100015004.710223347100150220330390470680100056.36.36.36.388881012.5161844556.36.36.36.38881012.512.51616456.36.36.386.388101012.512.51616165.85.85.85.87.76.210.210.210.210.213.516.516.55.85.85.85.85.85.87.77.710.210.210.210.213.513.516.516.55.85.85.85.87.76.27.76.210.210.210.213.513.516.516.516.5C D D D D8E F F F G H13J16K16B B C C D D D8D8F F F G H13H13J16J16B C D D D8E D8E F G G H13H13J16J16J161602402402402803006006006008501100180020609090160160240240280280600600600850110011001800180060851651651951951951953506706709009001610161016100.70.360.360.360.340.260.160.160.160.080.060.0350.0331.351.350.700.700.360.360.340.340.160.160.160.080.060.060.0350.0352.91.520.880.880.680.680.680.680.340.180.180.120.120.0730.0730.073EEVFK1E330UR EEVFK1E330P EEVFK1E470P EEVFK1E680P EEVFK1E101XP EEVFK1E101P EEVFK1E151P EEVFK1E221P EEVFK1E331P EEVFK1E471PEEVFK1V4R7R EEVFK1V100UR EEVFK1V100R EEVFK1V220R EEVFK1V330P EEVFK1V470P EEVFK1V680XP EEVFK1V101XP EEVFK1V101P EEVFK1V151P EEVFK1V221P EEVFK1V331PEEVFK1H4R7R EEVFK1H100UR EEVFK1H100P EEVFK1H220P EEVFK1H330XP EEVFK1H330P EEVFK1H470XP EEVFK1H470P EEVFK1H101P EEVFK1H151P EEVFK1H221P100010001000100090010005005005005002001251252000200010001000100010009009005005005005002002001251252000100010001000900100090010005005005002002001251251250.140.140.140.140.140.140.140.140.140.140.140.160.180.120.120.120.120.120.120.120.120.120.120.120.120.120.120.120.120.100.100.100.100.100.100.100.100.100.100.100.100.100.100.100.102535EEEFK1E330UR EEEFK1E330P EEEFK1E470P EEEFK1E680P EEEFK1E101XP EEEFK1E101P EEEFK1E151P EEEFK1E221P EEEFK1E331P EEEFK1E471P EEVFK1E102Q EEVFK1E222M EEVFK1E332M EEEFK1V4R7R EEEFK1V100UR EEEFK1V100R EEEFK1V220R EEEFK1V330P EEEFK1V470PEEEFK1V680XP EEEFK1V101XP EEEFK1V101P EEEFK1V151P EEEFK1V221P EEEFK1V331P EEVFK1V471Q EEVFK1V681Q EEVFK1V102M EEVFK1V152MEEEFK1H4R7R EEEFK1H100UR EEEFK1H100P EEEFK1H220P EEEFK1H330XP EEEFK1H330P EEEFK1H470XP EEEFK1H470P EEEFK1H101PEEEFK1H151P EEEFK1H221PEEVFK1H331Q EEVFK1H391Q EEVFK1H471M EEVFK1H681M EEVFK1H102MPart No.(RoHS:compliant)ReflowReflow(1)(1)(1)(1)(1)(2)(2)(2)(2)(2)(2)(2)(2)(1)(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(1)(1)(1)(2)(1)(2)(2)(2)(2)(4)(4)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(4)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(2)(4)(4)(4)(4)(4)(5)(4)(5)(5)(5)(5)(2)(2)(2)(2)(2)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Standard Productsn (µF)(m m )(m m )(m A )Part No.(RoHS:compliant)SpecificationDia.LengthTapingCase sizeCap.(±20%)W.V.Ripplecurrent (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance (100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)(V)(Ω)4.710223347681001502204706803.34.71022334768100150330470223347681001502203305 6.3 6.3 8 8 8 81012.512.51618 5 6.3 6.3 8 8 81012.512.512.516188.01012.512.5161618185.85.87.76.210.210.210.210.213.513.516.516.55.85.87.76.210.210.210.213.513.513.516.516.510.210.213.513.516.516.516.516.5C D D8E F F F G H13H13J16K16C D D8E F F G H13H13H13J16K16F G H13H13J16J16K16K16508012012025025025040080080014101690254060601301302005005005007939171302005005007937939179173.01.51.21.20.650.650.650.350.160.160.0820.085.03.02.42.41.31.30.70.320.320.320.170.1531.30.70.320.320.170.170.1530.153EEVFK1J4R7R EEVFK1J100P EEVFK1J220XP EEVFK1J220P EEVFK1J330P EEVFK1J470P EEVFK1J680UP EEVFK1J101PEEVFK1K3R3R EEVFK1K4R7P EEVFK1K100XP EEVFK1K100P EEVFK1K220P EEVFK1K330P EEVFK1K470PEEVFK2A220P EEVFK2A330P1000100090010005005005005002002001251251000100090010005005005002002002001251255005002002001251251251250.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.070.070.070.070.070.070.070.0780100Endurance: 2000 to 5000h at 105°C63Part No.(RoHS:not compliant)EEEFK1J4R7R EEEFK1J100P EEEFK1J220XP EEEFK1J220P EEEFK1J330P EEEFK1J470P EEEFK1J680UP EEEFK1J101P EEVFK1J151Q EEVFK1J221Q EEVFK1J471M EEVFK1J681MEEEFK1K3R3R EEEFK1K4R7P EEEFK1K100XP EEEFK1K100P EEEFK1K220P EEEFK1K330P EEEFK1K470P EEVFK1K680Q EEVFK1K101Q EEVFK1K151Q EEVFK1K331M EEVFK1K471MEEEFK2A220P EEEFK2A330P EEVFK2A470Q EEVFK2A680Q EEVFK2A101M EEVFK2A151M EEVFK2A221M EEVFK2A331MReflowReflow(1)(1)(1)(2)(2)(2)(2)(2)(1)(1)(1)(2)(2)(2)(2)(2)(2)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(2)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(2)(2)(5)(5)(2)(2)(2)(2)(2)(2)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Part Number Prefix Suffix Size RoHS Terminal Finish MaterialsECEV• • • R R3φ to 5φNo Sn-Pb Peak Temp.: 240deg.C(within 5s),within 20s(time in200deg.C or more)Fig.1 6φ • • • Peak Temp.: 240deg.C(within5s),within 20s(time in 200deg.C or more)Fig.1 8 and 10φ •••Peak Temp.: 230deg.C(within5s),within 20s(time in 200deg.C or more)Fig.2EEV• • • R R4φ and 5φNo Sn-Pb Peak Temp.: 240deg.C(within 5s),within 20s(time in200deg.C or more)Fig.1 6φ • • • Peak Temp.: 240deg.C(within5s),within 20s(time in 200deg.C or more)Fig.1 8 and 10φ •••Peak Temp.: 230deg.C(within5s),within 20s(time in 200deg.C or more)Fig.2EEV• • • Q Q 12.5φOK Sn Fig.2 (Except for EB series)EEV• • • M M16φ and 18φOK Sn Fig.3 (EB series only)EEE • • R R3φ to 5φOK Sn-Bi Peak Temp.: 250deg.C(within 5s),within 60s(time in200deg.C or more)Fig. 4 6φ • • • Peak Temp.: 250deg.C(within5s),within 60s(time in 200deg.C or more)Fig. 4 8 and 10φ •••Peak Temp.: 235deg.C(within5s),within 60s(time in 200deg.C or more)Fig. 5(5)Peak Temp.: 230deg.C(within 5s),within 20s(time in200deg.C or more)Reflow ConditionP6φ to 10φOK Sn-BiSn-PbP6φ to 10φNoEEE• • • PEEESn-PbPEEV• • • P6φ to 10φNoEEVECEV• • • PECEV。
EEE-TG1K100P中文资料(panasonic)中文数据手册「EasyDatasheet - 矽搜」
G
50 100
10
10.2
(G)
220
12.5 13.5
H13
330
12.5 13.5
H13
470
16
16.5
J16
680
16
16.5 (J16)
18
16.5
K16
1000
18
16.5
K16
10
8
6.2
E
22
8
10.2
F
33
8
10.2
(F)
10
10.2
G
47 63
8
10.2
(F)
10
10.2
G
10
10.2
Min.
包装台数
Reflow
大坪
(pcs)
(2)
1000
(2)
1000
(2)
500
(2)
500
(2)
500
(2)
500
(3)
200
(3)
200
(3)
125
(3)
125
(3)
125
(3)
125
(2)
500
(2)
500
(2)
500
(2)
500
(3)
200
(3)
200
(3)
200
(3)
200
(3)
125
(3)
10 12.5
10.2 13.5
(G) H13
1500 12.5 13.5 (H13)
2200
16
16.5
J16
V23990-P549-A中文资料
Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Input Rectifier BridgeGleichrichterRepetitive peak reverse voltage V RRM1600V Periodische Rückw. SpitzensperrspannungForward current per diode DC current Th =80°C;IFAV30ADauergrenzstrom Tc=80°C40-limited by wiresSurge forward current t p=10ms T j=25°C I FSM200A Stoßstrom GrenzwertI2t-value tp=10ms T j=25°C I2t200A2s GrenzlastintegralPower dissipation per Diode T j=150°C T h=80°C P tot37W Verlustleistung pro Diode T c=80°C54Transistor InverterTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C,I C13A Kollektor-Dauergleichstrom T c=80°C16Repetitive peak collector current t p=1ms T h=80°C I cpuls25A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot34W Verlustleistung pro IGBT T c=80°C52Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C V GE=15V t SC10us Kurzschlußverhalten V CE=V CEBRDiode InverterDiode WechselrichterDC forward current T j=150°C T h=80°C,I F10A Dauergleichstrom T c=80°C14Repetitive peak forward current t p=1ms T h=80°C I FRM21A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot21W Verlustleistung pro Diode T c=80°C32Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Transistor BRCTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C I C9-limited by wires A Kollektor-Dauergleichstrom T c=80°C9-limited by wires Repetitive peak collector current t p=1ms T h=80°C I cpuls21A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot23W Verlustleistung pro IGBT T c=80°C35Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C VGE=15V t SC10us Kurzschlußverhalten VCE=600/1200 VDiode BRCDiode BRCDC forward current T j=150°C T h=80°C I F9A Dauergleichstrom T c=80°C9-limited by wires Repetitive peak forward current t p=1ms T h=80°C I FRM18A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot23W Verlustleistung pro Diode T c=80°C35Thermal propertiesThermische Eigenschaftenmax. Chip temperature T150°Cjmaxmax. ChiptemperaturStorage temperature T-40…+125°CstgLagertemperatur-40…+125°C Operation temperature TopBetriebstemperaturInsulation propertiesModulisolation4000Vdc Insulation voltage t=1min VisIsolationsspannungCreepage distance min 12,7mm KriechstreckeClearance min 12,7mm LuftstreckeT(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ MaxInput Rectifier BridgeGleichrichterForward voltage V F Tj=25°C301,221,45V Durchlaßpannung Tj=125°C1,21Threshold voltage (for power loss calc. only)V to Tj=25°C300,92V Schleusenspannung Tj=125°C0,81Slope resistance (for power loss calc. only)r t Tj=25°C0,01Ohm Ersatzwiderstand Tj=125°C300,013Reverse current I r Tj=25°C15000,01mA Sperrstrom Tj=150°C3Thermal resistance chip to heatsink per chip RthJH Thermal greasethickness≤50um 1,92K/WWärmewiderstand Chip-Kühlkörper pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,27Transistor Inverter, inductive loadTransistor WechselrichterGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000355,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,872,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,21Collector-emitter cut-off I CES Tj=25°C012000,06mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CIntegrated Gate resistor R gint Ohm Integrirter Gate WiderstandTurn-on delay time t d(on)Tj=25°C Rgon=80Ohm1560010ns Einschaltverzögerungszeit Tj=125°C Rgoff=40Ohm33Rise time t r Tj=25°C Rgon=80Ohm1560010ns Anstiegszeit Tj=125°C Rgoff=40Ohm22Turn-off delay time t d(off)Tj=25°C Rgon=80Ohm1560010ns Abschaltverzögerungszeit Tj=125°C Rgoff=40Ohm454Fall time t f Tj=25°C Rgon=80Ohm1560010ns Fallzeit Tj=125°C Rgoff=40Ohm252Turn-on energy loss per pulse E on Tj=25°C Rgon=80Ohm1560010mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm0,97Turn-off energy loss per pulse E off Tj=25°C Rgon=80Ohm1560010mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm1,48Input capacitance C ies Tj=25°C f=1MHz0250,6nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,037nF Ausgangskapazität Tj=125°CReverse transfer capacitance C rss Tj=25°C f=1MHz0250,029nF Rückwirkungskapazität Tj=125°CGate charge Q Gate Tj=25°C15960853nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,04K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,35Diode InverterDiode WechselrichterDiode forward voltage V F Tj=25°C102,593,15V Durchlaßspannung Tj=125°C2,1Peak reverse recovery current I RRM Tj=25°C Rgon=80Ohm1560010A Rückstromspitze Tj=125°C19,6Reverse recovery time t rr Tj=25°C Rgon=80Ohm1560010ns Sperreverzögerungszeit Tj=125°C326Reverse recovered charge Q rr Tj=25°C Rgon=80Ohm1560010uC Sperrverzögerungsladung Tj=125°C1,93Reverse recovered energy Erec Tj=25°C Rgon=80Ohm1560010mWs Sperrverzögerungsenergie Tj=125°C0,73Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 3,30K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK2,18T(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ Max Transistor BRCTransistor BRCGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000355,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,992,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,38Collector-emitter cut-off I CES Tj=25°C012000,05mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CTurn-on delay time t d(on)Tj=25°C Rgon=80Ohm1560010ns Einschaltverzögerungszeit Tj=125°C Rgoff=40Ohm33Rise time t r Tj=25°C Rgon=80Ohm1560010ns Anstiegszeit Tj=125°C Rgoff=40Ohm20Turn-off delay time t d(off)Tj=25°C Rgon=80Ohm1560010ns Abschaltverzögerungszeit Tj=125°C Rgoff=40Ohm419Fall time t f Tj=25°C Rgon=80Ohm1560010ns Fallzeit Tj=125°C Rgoff=40Ohm244Turn-on energy loss per pulse EonTj=25°C Rgon=80Ohm1560010uWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm0,67Turn-off energy loss per pulse EoffTj=25°C Rgon=80Ohm1560010uWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm1,38Input capacitance CissTj=25°C f=1MHz0250,6nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,037nF Ausgangskapazität Tj=125°CReverse transfer capacitance Cies Tj=25°C f=1MHz0250,029nF Rückwirkungskapazität Tj=125°CGate charge Qgate Tj=25°C15960853nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,53K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,6698Diode BRCDiode BRCDiode forward voltage VFTj=25°C102,573V Durchlaßspannung Tj=125°C2,64Reverse current I r Tj=25°C1200250uA Sperrstrom Tj=150°C350Reverse recovery time trrTj=25°C Rgon=80Ohm1560010ns Sperreverzögerungszeit Tj=125°C395Reverse recovered charge QrrTj=25°C Rgon=80Ohm1560010uC Sperrverzögerungsladung Tj=125°C1,33Reverse recovery energy E rec Tj=25°C Rgon=80Ohm1560010uWs Sperrverzögerungsenergie Tj=125°C0,59Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 3,97K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK2,6202NTC-ThermistorNTC-WiderstandRated resistance R25Tj=25°C Tol. ±5%20,92223,1kOhm NennwiderstandDeviation of R100D R/R Tc=100°C R100=1503Ohm2,9%/K Abweichung von R100Power dissipation given Epcos-Typ P Tj=25°C210mW Verlustleistung Epcos-Typ angebenB-value B(25/100)Tj=25°C Tol. ±3%3980K B-WertOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )Ic= f(V CE )V GE parameter:from:6V to 16VV GE parameter:from:6V to 16Vin 1V stepsin 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageOutput inverter FREDI F =f(V F )parameter: tp = 250 µs V CE = 12V parameter: tp = 250 µsOutput inverterFigure 5.Typical switching energy lossesFigure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector currentfunction of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10AOutput inverterFigure 9.Typical reverse recovery time as aFigure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED dioderrRRM Tj =125°C Tj =125°C V R =600V V R =600V I F =10A I F =10AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as aOutput inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C VR =600V V R =600V I F =10A I F =10AOutput inverterFigure 13.IGBT transient thermal impedance Figure 14.FRED transient thermal impedance as a function of pulse width as a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)R (C/W)Tau (s)R (C/W)Tau (s)0,062,0E+010,046,0E+010,218,6E-010,231,4E+000,901,4E-011,031,5E-010,532,4E-020,994,1E-020,223,2E-030,636,0E-030,291,1E-03Output inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CBrakeFigure 19.Typical output characteristics Figure 20.Typical output characteristics Brake IGBT Brake IGBTIc= f(V CE) Ic= f(V CE)parameter: tp = 250 µs Tj = 25 °C parameter: tp = 250 µs Tj = 125 °CV GE parameter:from:6V to16V V GE parameter:from:6V to16Vin1V steps in1V steps Figure 21.Typical transfer characteristics Figure 22.Typical diode forward current as Brake IGBT a function of forward voltageIc= f(V GE) Brake FRED I F=f(V F)CEBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10ABrakeFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH 3,97K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VBrakeFigure 32.Forward current as afunction of heatsink temperatureBrake FREDI F = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)Figure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CThermistorFigure 37.Typical NTC characteristicas a function of temperatureOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=80ohmsRgoff=40ohmsFigure 1.Typical avarage static lossFigure 2.Typical avarage static loss as a function of output currentas a function of output currentModulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from -1,00to1,00parameter Mi*cosfi from -1,00to1,00in 0,20stepsin 0,20stepsFigure 3.Typical avarage switching lossFigure 4.Typical avarage switching loss as a function of output currentas a function of output currentIGBTPloss=f(Iout)FREDPloss=f(Iout)DC link=600V DC link=600V Switching freq.fsw from2kHz to 16kHzSwitching freq.fsw from2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=80ohms Rgoff=40ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=600V DC link=600Vfsw=4kHz Mi*cosfi=0,8 Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=600V DC link=600VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=80ohmsRgoff=40ohmsFigure 9.Typical available electricFigure 10.Typical efficiencypeak output power as aas a function of output powerTfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125CDC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80Switching freq.fsw from 2kHz to16kHzparameter in * 2stepsConditions:Tj=125CDC link=600VModulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to16kHzparameter in * 2stepsHeatsink temperature=80°CMotor efficiency=0,85。
EEEFK1C101P中文资料
(V)(Ω)6.31610252247100220330470100015003300680022331502203304706801000220047006800102247681001502203304706801500330047001022B BC CD D D8EF F GH 13J16B B C D D8E F F F GH13J16K16B B C C D D D D8D8E F F GH13J16K16B C90901601602402402803006006008501100180090901602402803006006006008501100180020609090160160240240240280280300600600850110018002060901601.351.350.700.700.360.360.340.260.160.160.080.060.0351.351.350.700.360.340.260.160.160.160.080.060.0350.0331.351.350.700.700.360.360.360.340.340.260.160.160.080.060.0350.0331.350.7EEVFK0J220R EEVFK0J470UR EEVFK0J470R EEVFK0J101UR EEVFK0J101P EEVFK0J221P EEVFK0J331XP EEVFK0J331P EEVFK0J471P EEVFK0J102P EEVFK0J152PEEVFK1A220R EEVFK1A330UR EEVFK1A330R EEVFK1A151P EEVFK1A221XP EEVFK1A221P EEVFK1A331P EEVFK1A471P EEVFK1A681P EEVFK1A102PEEVFK1C100R EEVFK1C220UR EEVFK1C220R EEVFK1C470UR EEVFK1C470P EEVFK1C680P EEVFK1C101P EEVFK1C151XP EEVFK1C221XP EEVFK1C221P EEVFK1C331P EEVFK1C471P EEVFK1C681PEEVFK1E100R EEVFK1E220R20002000100010001000100090010005005005002001252000200010001000900100050050050050020012512520002000100010001000100010009009001000500500500200125125200010000.260.260.260.260.260.260.260.260.260.260.260.300.360.190.190.190.190.190.190.190.190.190.190.210.250.290.160.160.160.160.160.160.160.160.160.160.160.160.160.160.200.220.140.14Standard Productsn (µF)(m m )(m m )(m A )Part No.(RoHS:not compliant)SpecificationDia.Length TapingCase sizeCap.(±20%)W.V.Ripple current (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance(100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)44556.36.36.38881012.5164456.36.388881012.5161844556.36.36.36.36.38881012.51618455.85.85.85.85.85.87.76.210.210.210.213.516.55.85.85.85.87.76.210.210.210.210.213.516.516.55.85.85.85.85.85.85.87.77.76.210.210.210.213.516.516.55.85.8Endurance: 2000 to 5000h at 105°CPart No.(RoHS:compliant)EEEFK0J220R EEEFK0J470UR EEEFK0J470R EEEFK0J101UR EEEFK0J101P EEEFK0J221P EEEFK0J331XP EEEFK0J331P EEEFK0J471P EEEFK0J102P EEEFK0J152PEEVFK0J332Q EEVFK0J682MEEEFK1A220R EEEFK1A330UR EEEFK1A330R EEEFK1A151P EEEFK1A221XP EEEFK1A221P EEEFK1A331P EEEFK1A471P EEEFK1A681P EEEFK1A102PEEVFK1A222Q EEVFK1A472M EEVFK1A682MEEEFK1C100R EEEFK1C220UR EEEFK1C220R EEEFK1C470UR EEEFK1C470P EEEFK1C680P EEEFK1C101PEEEFK1C151XP EEEFK1C221XP EEEFK1C221P EEEFK1C331P EEEFK1C471P EEEFK1C681PEEVFK1C152Q EEVFK1C332M EEVFK1C472MEEEFK1E100R EEEFK1E220RReflowReflow(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(1)(1)(1)(2)(2)(2)(2)(2)(1)(1)(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(4)(4)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(4)(4)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(4)(4)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Endurance: 2000 to 5000h at 105°CStandard Productsn(µF)(m m )(m m )(m A )Part No.(RoHS:not compliant)SpecificationDia.LengthTapingCase sizeCap.(±20%)W.V.Ripple current (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance(100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)(Ω)503347681001502203304701000220033004.71022334768100150220330470680100015004.710223347100150220330390470680100056.36.36.36.388881012.5161844556.36.36.36.38881012.512.51616456.36.36.386.388101012.512.51616165.85.85.85.87.76.210.210.210.210.213.516.516.55.85.85.85.85.85.87.77.710.210.210.210.213.513.516.516.55.85.85.85.87.76.27.76.210.210.210.213.513.516.516.516.5C D D D D8E F F F G H13J16K16B B C C D D D8D8F F F G H13H13J16J16B C D D D8E D8E F G G H13H13J16J16J161602402402402803006006006008501100180020609090160160240240280280600600600850110011001800180060851651651951951951953506706709009001610161016100.70.360.360.360.340.260.160.160.160.080.060.0350.0331.351.350.700.700.360.360.340.340.160.160.160.080.060.060.0350.0352.91.520.880.880.680.680.680.680.340.180.180.120.120.0730.0730.073EEVFK1E330UR EEVFK1E330P EEVFK1E470P EEVFK1E680P EEVFK1E101XP EEVFK1E101P EEVFK1E151P EEVFK1E221P EEVFK1E331P EEVFK1E471PEEVFK1V4R7R EEVFK1V100UR EEVFK1V100R EEVFK1V220R EEVFK1V330P EEVFK1V470P EEVFK1V680XP EEVFK1V101XP EEVFK1V101P EEVFK1V151P EEVFK1V221P EEVFK1V331PEEVFK1H4R7R EEVFK1H100UR EEVFK1H100P EEVFK1H220P EEVFK1H330XP EEVFK1H330P EEVFK1H470XP EEVFK1H470P EEVFK1H101P EEVFK1H151P EEVFK1H221P100010001000100090010005005005005002001251252000200010001000100010009009005005005005002002001251252000100010001000900100090010005005005002002001251251250.140.140.140.140.140.140.140.140.140.140.140.160.180.120.120.120.120.120.120.120.120.120.120.120.120.120.120.120.120.100.100.100.100.100.100.100.100.100.100.100.100.100.100.100.102535EEEFK1E330UR EEEFK1E330P EEEFK1E470P EEEFK1E680P EEEFK1E101XP EEEFK1E101P EEEFK1E151P EEEFK1E221P EEEFK1E331P EEEFK1E471P EEVFK1E102Q EEVFK1E222M EEVFK1E332M EEEFK1V4R7R EEEFK1V100UR EEEFK1V100R EEEFK1V220R EEEFK1V330P EEEFK1V470PEEEFK1V680XP EEEFK1V101XP EEEFK1V101P EEEFK1V151P EEEFK1V221P EEEFK1V331P EEVFK1V471Q EEVFK1V681Q EEVFK1V102M EEVFK1V152MEEEFK1H4R7R EEEFK1H100UR EEEFK1H100P EEEFK1H220P EEEFK1H330XP EEEFK1H330P EEEFK1H470XP EEEFK1H470P EEEFK1H101PEEEFK1H151P EEEFK1H221PEEVFK1H331Q EEVFK1H391Q EEVFK1H471M EEVFK1H681M EEVFK1H102MPart No.(RoHS:compliant)ReflowReflow(1)(1)(1)(1)(1)(2)(2)(2)(2)(2)(2)(2)(2)(1)(1)(1)(1)(1)(1)(1)(1)(2)(2)(2)(2)(1)(1)(1)(1)(1)(2)(1)(2)(2)(2)(2)(4)(4)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(4)(4)(4)(4)(4)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(2)(4)(4)(4)(4)(4)(5)(4)(5)(5)(5)(5)(2)(2)(2)(2)(2)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Standard Productsn (µF)(m m )(m m )(m A )Part No.(RoHS:compliant)SpecificationDia.LengthTapingCase sizeCap.(±20%)W.V.Ripplecurrent (100kHz)(+105°C)Min.Packaging Q'ty S i z e Code Impe-dance (100kHz)(+20°C)tan δ(120Hz)(+20°C)(pcs)(V)(Ω)4.710223347681001502204706803.34.71022334768100150330470223347681001502203305 6.3 6.3 8 8 8 81012.512.51618 5 6.3 6.3 8 8 81012.512.512.516188.01012.512.5161618185.85.87.76.210.210.210.210.213.513.516.516.55.85.87.76.210.210.210.213.513.513.516.516.510.210.213.513.516.516.516.516.5C D D8E F F F G H13H13J16K16C D D8E F F G H13H13H13J16K16F G H13H13J16J16K16K16508012012025025025040080080014101690254060601301302005005005007939171302005005007937939179173.01.51.21.20.650.650.650.350.160.160.0820.085.03.02.42.41.31.30.70.320.320.320.170.1531.30.70.320.320.170.170.1530.153EEVFK1J4R7R EEVFK1J100P EEVFK1J220XP EEVFK1J220P EEVFK1J330P EEVFK1J470P EEVFK1J680UP EEVFK1J101PEEVFK1K3R3R EEVFK1K4R7P EEVFK1K100XP EEVFK1K100P EEVFK1K220P EEVFK1K330P EEVFK1K470PEEVFK2A220P EEVFK2A330P1000100090010005005005005002002001251251000100090010005005005002002002001251255005002002001251251251250.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.070.070.070.070.070.070.070.0780100Endurance: 2000 to 5000h at 105°C63Part No.(RoHS:not compliant)EEEFK1J4R7R EEEFK1J100P EEEFK1J220XP EEEFK1J220P EEEFK1J330P EEEFK1J470P EEEFK1J680UP EEEFK1J101P EEVFK1J151Q EEVFK1J221Q EEVFK1J471M EEVFK1J681MEEEFK1K3R3R EEEFK1K4R7P EEEFK1K100XP EEEFK1K100P EEEFK1K220P EEEFK1K330P EEEFK1K470P EEVFK1K680Q EEVFK1K101Q EEVFK1K151Q EEVFK1K331M EEVFK1K471MEEEFK2A220P EEEFK2A330P EEVFK2A470Q EEVFK2A680Q EEVFK2A101M EEVFK2A151M EEVFK2A221M EEVFK2A331MReflowReflow(1)(1)(1)(2)(2)(2)(2)(2)(1)(1)(1)(2)(2)(2)(2)(2)(2)(4)(4)(4)(5)(5)(5)(5)(5)(2)(2)(2)(2)(4)(4)(4)(5)(5)(5)(5)(2)(2)(2)(2)(2)(5)(5)(2)(2)(2)(2)(2)(2)The taping dimension are explained on p.187 of our Catalog. Please use it as a reference guide.Reflow Profile(Fig-1 to Fig-5) listed in a last page.Part Number Prefix Suffix Size RoHS Terminal Finish MaterialsECEV• • • R R3φ to 5φNo Sn-Pb Peak Temp.: 240deg.C(within 5s),within 20s(time in200deg.C or more)Fig.1 6φ • • • Peak Temp.: 240deg.C(within5s),within 20s(time in 200deg.C or more)Fig.1 8 and 10φ •••Peak Temp.: 230deg.C(within5s),within 20s(time in 200deg.C or more)Fig.2EEV• • • R R4φ and 5φNo Sn-Pb Peak Temp.: 240deg.C(within 5s),within 20s(time in200deg.C or more)Fig.1 6φ • • • Peak Temp.: 240deg.C(within5s),within 20s(time in 200deg.C or more)Fig.1 8 and 10φ •••Peak Temp.: 230deg.C(within5s),within 20s(time in 200deg.C or more)Fig.2EEV• • • Q Q 12.5φOK Sn Fig.2 (Except for EB series)EEV• • • M M16φ and 18φOK Sn Fig.3 (EB series only)EEE • • R R3φ to 5φOK Sn-Bi Peak Temp.: 250deg.C(within 5s),within 60s(time in200deg.C or more)Fig. 4 6φ • • • Peak Temp.: 250deg.C(within5s),within 60s(time in 200deg.C or more)Fig. 4 8 and 10φ •••Peak Temp.: 235deg.C(within5s),within 60s(time in 200deg.C or more)Fig. 5(5)Peak Temp.: 230deg.C(within 5s),within 20s(time in200deg.C or more)Reflow ConditionP6φ to 10φOK Sn-BiSn-PbP6φ to 10φNoEEE• • • PEEESn-PbPEEV• • • P6φ to 10φNoEEVECEV• • • PECEV。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
4.0 5.8 5.0 5.8 6.3 5.8 8.0 6.2
0.65±0.1 0.65±0.1 0.65±0.1 0.65±0.1 0.90±0.2 0.90±0.2
1.0 0.35 -0.20 to +0.15 1.5 0.35 -0.20 to +0.15 1.8 0.35 -0.20 to +0.15 2.2 0.35 -0.20 to +0.15 3.1 0.70 ±0.20 4.6 0.70 ±0.20
L ±0.3 Size code B C D L A,B H max. 4.3 5.3 6.6 8.3 5.5 6.5 7.8 9.5 10.0 I 1.8 2.2 2.6 3.4 3.4 3.5 W
w P
(I)
10
Capacitance (µF)
(P)
H
W.V. code
B±0.2
K
Lot number
10(1A)
16(1C)
25(1E)
35(1V)
50(1H)
B B B B C D E F G
63(1J) 100(2A)
B C D F G
E F G
B C D D E F G
B C D E F G G
E F G
E F F G
Design, Specifications are subject to change without notice. Ask factory for technical specifications before purchase and/or use. Whenever a doubt about safety arises from this product, please inform us immediately for technical consulation without fail.
EE60
元器件交易网
Aluminum Electrolytic Capacitor/HD
s Standard
Products
Case size Specification
Ripple current (120Hz) (+105°C) (m A ) Impedance (100kHz) (+20°C) ( Ω) Dia. Length Size Code
62 93 118 20 33 55 89 113 15 26 42 52 56 84 112 17 28 47 53 79 101 106 5 7 12 16 21 33 50 74 94 45 65 80 30 50 55 70
2.0 1.5 0.8 12.0 7.2 4.0 1.5 0.8 12.0 7.2 4.0 4.0 2.0 1.5 0.8 12.0 7.2 4.0 2.0 1.5 0.8 0.8 12.0 12.0 12.0 12.0 7.2 4.0 2.0 1.5 0.8 2.0 1.5 0.8 2.0 1.5 1.5 0.8
16
47 100 220 4.7 10 22 33 47 100 330 4.7 10 22
25
V . HD
35
33 47 100 220 0.47 1.0 2.2 3.3
50
4.7 10 22 33 47 10
63
22 33 3.3 4.7 10 22
100
The taping dimension are explained on p.42 of our Catalog. Please use it as a reference guide. Endurance: 105°C 5000h
W.V. code
V Code V Code s Case Size
Cap.(µF) W.V. 0.47 1.0 2.2 3.3 4.7 10 22 33 47 100 220 330
10 A 50 H
16 C 63 J
25 E 100 2A
35 V
D E F G
8.0 10.2 8.3
10.0 10.2 10.3 12.0
s Dimensions in mm (not to scale) 0.3 max A±0.2 (I) ( ) reference size
Example.16V10µF Marking color : BLACK
φD±0.5
Negative polarity marking
C HD
Series identification
(mm) 6.2 10.2 10.2 5.8 5.8 5.8 10.2 10.2 5.8 5.8 5.8 5.8 6.2 10.2 10.2 5.8 5.8 5.8 6.2 10.2 10.2 10.2 5.8 5.8 5.8 5.8 5.8 5.8 6.2 10.2 10.2 6.2 10.2 10.2 6.2 10.2 10.2 10.2 E F G B C D F G B C D D E F G B C D E F G G B B B B C D E F G E F G E F F G
= 0.01 CV or 3(µA) After 2 minutes application of rated working voltage at +20°C. ( Whichever is greater) I< Please see the attached standard products list
Japan
Category temp. range Rated W.V. Range Nominal Cap. Range Capacitance Tolerance DC Leakage Current tan δ Characteristics at Low Temperature
W.V. (V) 10 Z(-25°C) / Z( +20 ° C) 6 Z(-40 °C)/ Z(+20 °C) 12
P EEVHD1A221P EEVHD1A331P EEVHD1C100R EEVHD1C220R EEVHD1C470P EEVHD1C101P EEVHD1C221P EEVHD1E4R7R EEVHD1E100R EEVHD1E220P EEVHD1E330P EEVHD1E470P EEVHD1E101P EEVHD1E331P EEVHD1V4R7R EEVHD1V100R EEVHD1V220P EEVHD1V330P EEVHD1V470P EEVHD1V101P EEVHD1V221P EEVHD1HR47R EEVHD1H1R0R EEVHD1H2R2R EEVHD1H3R3R EEVHD1H4R7R EEVHD1H100P EEVHD1H220P EEVHD1H330P EEVHD1H470P EEVHD1J100P EEVHD1J220P EEVHD1J330P EEVHD2A3R3P EEVHD2A4R7P EEVHD2A100P EEVHD2A220P 1000 500 500 2000 1000 1000 500 500 2000 1000 1000 1000 1000 500 500 2000 1000 1000 1000 500 500 500 2000 2000 2000 2000 1000 1000 1000 500 500 1000 500 500 1000 500 500 500
W.V. (V) 10
Cap.
(±20%)
tan δ
(120Hz) (+20°C)
Part No.
Min.Packaging Q'ty Taping
(µF) 100 220 330 10 22
(mm) 8 8 10 4 5 6.3 8 10 4 5 6.3 6.3 8 8 10 4 5 6.3 8 8 10 10 4 4 4 4 5 6.3 8 8 10 8 8 10 8 8 8 10
Design, Specifications are subject to change without notice. Ask factory for technical specifications before purchase and/or use. Whenever a doubt about safety arises from this product, please inform us immediately for technical consulation without fail.
16 2 5
25 2 3
35 2 3
50 2 3
63 2 3
100 2 3
(Impedance ratio at 120 Hz)
Endurance
Shelf Life
Resistance to Soldering Heat
s Marking
After applying rated working voltage for 5000 hours at +105±2°C and then being stabilized at +20°C, capacitors shall meet the following limits. Capacitance change ±30% of initial measured value < 300 % of initial specified value tan δ = < DC leakage current = initial specified value After storage for 1000hours at +105±2 °C with no voltage applied and then being stabilized at +20°C, capacitors shall meet the limits specified in Endurance.(With voltage treatment) Capacitance change ±20% of initial measured value < tan δ = 200 % of initial specified value < DC leakage current = initial specified value After reflow soldering ( Refer to page 20 for recommendable temperature profile.) and then being stabilized at +20°C, capacitor shall meet the following limits. Capacitance change ±10% of initial measured value < initial specified value tan δ = < initial specified value DC leakage current =