TAR5S16中文资料
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V DRM=2800VI T(AV)M=1512AI T(RMS)=2375AI TSM=23.6×103AV(T0)=1.02Vr T=0.265mΩPhase Control Thyristor5STP 16F2801Doc. No. 5SYA1064-01 July 03•Low on-state and switching losses•Designed for traction, energy and industrial applications•Optimum power handling capabilityBlockingMaximum rated values 1)Symbol Conditions5STP 16F28015STP 16F26015STP 16F2401 V DRM, V RRM f = 50 Hz, t p = 10 ms2800 V2600 V2400 VdV/dt crit Exp. to 0.67 x V DRM, T vj = 125°C1000 V/µsCharacteristic valuesParameter Symbol Conditions min typ max UnitForward leakage current I DRM V DRM, T vj = 125°C150mA Reverse leakage current I RRM V RRM, T vj = 125°C150mAMechanical dataMaximum rated values 1)Parameter Symbol Conditions min typ max UnitMounting force F M202224kN Acceleration a Device unclamped50m/s2 Acceleration a Device clamped100m/s2 Characteristic valuesParameter Symbol Conditions min typ max UnitWeight m0.48kg Surface creepage distance D S25mm Air strike distance D a13mm1) Maximum rated values indicate limits beyond which damage to the device may occur元器件交易网ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.On-stateMaximum rated values1)ParameterSymbol Conditions min typ max Unit Average on-state current I T(AV)M Half sine wave, T c = 70°C 1512A RMS on-state current I T(RMS)2375A Peak non-repetitive surge currentI TSM 23.60×103A Limiting load integral I 2t tp = 10 ms, T vj = 125 °C,V D = V R = 0 V2.79×106A 2s Peak non-repetitive surge currentI TSM 25.20×103A Limiting load integralI 2ttp = 8.3 ms, T vj = 125 °C,V D = V R = 0 V2.64×106A 2s Characteristic valuesParameter Symbol Conditions mintypmaxUnit On-state voltage V T I T = 2000 A, T vj = 125 °C 1.55V Threshold voltage V (T0) 1.02V Slope resistance r T I T = 1900 A - 5800 A, T vj = 125 °C0.265m ΩHolding current I H T vj = 25 °C 170mA T vj = 125 °C 90mA Latching currentI LT vj = 25 °C 450mA T vj = 125 °C350mASwitchingMaximum rated values1)ParameterSymbol Conditions min typ maxUnit Critical rate of rise of on-state currentdi/dt crit Cont.f = 50 Hz 200A/µs Critical rate of rise of on-state currentdi/dt critT vj = 125 °C,I T = I T(AV),V D ≤ 0.67 V DRM ,I FG = 2 A, t r = 0.3 µsCont.f = 1 Hz1000A/µs Circuit-commutated turn-off timet q T vj = 125°C, I TRM = 2000 A,V R = 200 V, di T /dt = -12.5 A/µs,V D ≤ 0.67⋅V DRM , dv D /dt = 50V/µs200µsCharacteristic valuesParameter Symbol Conditions mintyp max Unit Recovery chargeQ rrT vj = 125°C, I TRM = 2000 A,V R = 200 V,di T /dt = -12.5 A/µs2600µAsGate turn-on delay time t gd V D = 0.4⋅V RM , I FG = 2 A, t r = 0.3 µs, T vj = 25 °C2µsTriggeringMaximum rated values1)ParameterSymbol Conditions min typ max Unit Peak forward gate voltage V FGM 12V Peak forward gate current I FGM 10A Peak reverse gate voltage V RGM 10V Mean forward gate powerP G(AV)3W Characteristic valuesParameter Symbol Conditions min typ maxUnit Gate-trigger voltageV GTT vj = -40 °C T vj = 25 °C T vj = 125 °C0.25432VGate-trigger current I GT T vj = -40 °C T vj = 25 °C T vj = 125 °C10500250150mAThermalMaximum rated values1)Parameter Symbol Conditions min typ max Unit Operating junction temperature rangeT vj-40125°C Storage temperature range T stg -40125°C Characteristic valuesParameterSymbol Conditionsmintyp max Unit Thermal resistance junction to caseR th(j-c)Double-side cooled 16K/kW R th(j-c)A Anode-side cooled 25K/kW R th(j-c)CCathode-side cooled 45K/kW Thermal resistance case to heatsinkR th(c-h)Double-side cooled 4K/kW R th(c-h)Single-side cooled8K/kWAnalytical function for transient thermalimpedance:)e -(1R = (t)Z n1i t/-i c)-th(j i å=τi 1234R i (K/kW) 5.5007.240 2.000 1.340τi (s)0.46530.15330.03750.0034Fig. 1 Transient thermal impedance junction-to case.Fig. 2Max. on-state voltage characteristics Fig. 3Surge forward current vs. pulse length. Halfsine wave, single pulse, V R = 0 VFig. 4Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f Fig. 5Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/fFig. 6Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 7Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/fABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland Ltd Doc. No. 5SYA1064-01 July 03Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306RED WHITEFig. 8Device Outline Drawing.。
Features•SPI bus compatible serial interface •16Mb Flash memory•75 MHz clock frequency (maximum)•2.7V to 3.6V single supply voltage•Page program (up to 256 bytes) in 0.64ms (TYP)•Erase capability–Sector erase: 512Kb in 0.6 s (TYP)–Bulk erase: 16Mb in 13 s (TYP)•Write protection–Hardware write protection: protected area size defined by non-volatile bits BP0, BP1, BP2•Deep power down: 1µA (TYP)•Electronic signature–JEDEC standard 2-byte signature (2015h)–Unique ID code (UID) and 16 bytes of read-only data, available upon customer request–RES command, one-byte signature (14h) for backward compatibility•More than 100,000 write cycles per sector •More than 20 years data retention •Automotive grade parts available •Packages (RoHS compliant)–SO8N (MN) 150 mils –SO8W (MW) 208 mils –SO16 (MF) 300 mils–VFDFPN8 (MP) MLP8 6mm x 5mm –VFDFPN8 (ME) MLP8 8mm x 6mm –UFDFPN8 (MC) MLP8 4mm x 3mm找Memory 、FPGA 、二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、 滤波器,上深圳市美光存储技术有限公司Functional DescriptionThe M25P16 is an 16Mb (2Mb x 8) serial Flash memory device with advanced write pro-tection mechanisms accessed by a high speed SPI-compatible bus. The device supportshigh-performance commands for clock frequency up to 75MHz.The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAMcommand. It is organized as 32 sectors, each containing 256 pages. Each page is 256bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The en-tire memory can be erased using the BULK ERASE command, or it can be erased onesector at a time using the SECTOR ERASE command.This datasheet details the functionality of the M25P16 device based on 110nm process.Figure 2: Pin Connections: SO8, VFQFPN , VDFPN1234V CC HOLD#5678DQ1V SSS#DQ0C W#Note:1.There is an exposed central pad on the underside of the MLP8 package that is pulled in-ternally to V SS , and must not be connected to any other voltage or signal line on the PCB. The Package Mechanical section provides information on package dimensions and how to identify pin 1.Figure 3: Pin Connections: SO16123416151413V CC HOLD#DNU DNU DNU DNU DNU DNU DNU DNU 56781211109DQ1V SS S#DQ0C W#/V PPNotes:1.DU = Don't Use2.The Package Mechanical section provides information on package dimensions and howto identify pin 1.Operating FeaturesPage ProgrammingTo program one data byte, two commands are required: WRITE ENABLE, which is onebyte, and a PAGE PROGRAM sequence, which is four bytes plus data. This is followed bythe internal PROGRAM cycle of duration t PP. To spread this overhead, the PAGE PRO-GRAM command allows up to 256 bytes to be programmed at a time (changing bitsfrom 1 to 0), provided they lie in consecutive addresses on the same page of memory. Tooptimize timings, it is recommended to use the PAGE PROGRAM command to programall consecutive targeted bytes in a single sequence than to use several PAGE PROGRAMsequences with each containing only a few bytes.Status RegisterThe status register contains a number of status and control bits that can be read or set(as appropriate) by specific commands. For a detailed description of the status registerbits, see READ STATUS REGISTER (page 25).Data Protection by ProtocolNon-volatile memory is used in environments that can include excessive noise. The fol-lowing capabilities help protect data in these noisy environments.Power on reset and an internal timer (t PUW) can provide protection against inadvertentchanges while the power supply is outside the operating specification.PROGRAM, ERASE, and WRITE STATUS REGISTER commands are checked before theyare accepted for execution to ensure they consist of a number of clock pulses that is amultiple of eight.All commands that modify data must be preceded by a WRITE ENABLE command to setthe write enable latch (WEL) bit.In addition to the low power consumption feature, the DEEP POWER-DOWN mode of-fers extra software protection since all PROGRAM, and ERASE commands are ignoredwhen the device is in this mode.Software Data ProtectionMemory can be configured as read-only using the block protect bits (BP2, BP1, BP0) asshown in the Protected Area Sizes table.Hardware Data ProtectionHardware data protection is implemented using the write protect signal applied on theW# pin. This freezes the status register in a read-only mode. In this mode, the block pro-tect (BP) bits and the status register write disable bit (SRWD) are protected.Table 3: Protected Area SizesNote: 1.0 0 = unprotected area (sectors): The device is ready to accept a BULK ERASE commandonly if all block protect bits (BP1, BP0) are 0.Table 4: Protected Area Sizes。
TOSHIBA Bipolar Linear Integrated Circuit Silicon MonolithicTAR5S15~TAR5S50Point Regulators (Low-Dropout Regulator)The TAR5Sxx Series is comprised of general-purpose bipolar single-power-supply devices incorporating a control pin which can be used to turn them ON/OFF.Overtemperature and overcurrent protection circuits are built in to the devices’ output circuit.Features• Low stand-by current•Overtemperature/overcurrent protection • Operation voltage range is wide. • Maximum output current is high.• Difference between input voltage and output voltage is low. • Small package.• Ceramic capacitors can be used.Pin Assignments (top view)Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating ratings below the absolute maximum ratings.Do not use devices under conditions in which their absolute maximum ratings will be exceeded.Weight: 0.014 g (typ.)1 32 V IN NOISE4GND V OUT CONTROL 5List of Products Number and MarkingMarking on the ProductProducts No.MarkingProducts No.MarkingTAR5S15 1V5 TAR5S33 3V3 TAR5S16 1V6 TAR5S34 3V4 TAR5S17 1V7 TAR5S35 3V5 TAR5S18 1V8 TAR5S36 3V6 TAR5S19 1V9 TAR5S37 3V7 TAR5S20 2V0 TAR5S38 3V8 TAR5S21 2V1 TAR5S39 3V9 TAR5S22 2V2 TAR5S40 4V0 TAR5S23 2V3 TAR5S41 4V1 TAR5S24 2V4 TAR5S42 4V2 TAR5S25 2V5 TAR5S43 4V3 TAR5S26 2V6 TAR5S44 4V4 TAR5S27 2V7 TAR5S45 4V5 TAR5S28 2V8 TAR5S46 4V6 TAR5S29 2V9 TAR5S47 4V7 TAR5S30 3V0 TAR5S48 4V8 TAR5S31 3V1 TAR5S49 4V9 TAR5S32 3V2 TAR5S50 5V0Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitSupply voltage V IN 15 V Output current I OUT 200 mA 200 (Note 1)Power dissipationP D 380 (Note 2)mWOperation temperature range T opr −40 to 85 °C Storage temperature rangeT stg−55 to 150°CNote:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Note 1: Unit RatintgNote 2: Mounted on a glass epoxy circuit board of 30 × 30 mm. Pad dimension of 50 mm 23 V 0Example: TAR5S30 (3.0 V output)TAR5S15~TAR5S22Electrical Characteristic (unless otherwise specified, V IN= V OUT+ 1 V, I OUT= 50 mA,C IN= 1 μF, C OUT= 10 μF, C NOISE= 0.01 μF, T j= 25°C)Characteristics SymbolTestConditionMinTyp.Max Unit Output voltage V OUT Please refer to the Output Voltage Accuracy table.Line regulation Reg・line V OUT+ 1 V < = VIN< = 15 V,I OUT= 1 mA⎯ 3 15 mV Load regulation Reg・load 1mA< = I OUT< = 150 mA ⎯ 25 75 mVI B1 I OUT= 0 mA ⎯ 170 ⎯Quiescent currentI B2I OUT= 50 mA ⎯ 550 850μA Stand-by current I B (OFF)V CT= 0 V ⎯⎯ 0.1 μAOutput noise voltage V NO V IN= V OUT+ 1 V, I OUT= 10 mA,10 Hz< = f< = 100 kHz,C NOISE= 0.01 μF, Ta = 25°C⎯ 30 ⎯μV rmsTemperature coefficient T CVO−40°C< = T opr< = 85°C ⎯ 100 ⎯ ppm/°C Input voltage V IN⎯ 2.4⎯ 15 VRipple rejection R.R. V IN= V OUT+ 1 V, I OUT= 10 mA,C NOISE= 0.01 μF, f = 1 kHz,V Ripple= 500 mV p-p, Ta = 25°C⎯ 70 ⎯ dBControl voltage (ON) V CT (ON)⎯ 1.5⎯V IN V Control voltage (OFF) V CT (OFF)⎯⎯⎯ 0.4 VControl current (ON) I CT (ON)V CT= 1.5 V ⎯ 3 10 μAControl current (OFF) I CT (OFF)V CT= 0 V ⎯ 0 0.1 μATAR5S23~TAR5S50Electrical Characteristic (unless otherwise specified, V IN= V OUT+ 1 V, I OUT= 50 mA,C IN= 1 μF, C OUT= 10 μF, C NOISE= 0.01 μF, T j= 25°C)Characteristics SymbolTestConditionMinTyp.Max Unit Output voltage V OUT Please refer to the Output Voltage Accuracy table.Line regulation Reg・line V OUT+ 1 V < = VIN< = 15 V,I OUT= 1 mA⎯ 3 15 mV Load regulation Reg・load 1mA< = I OUT< = 150 mA ⎯ 25 75 mVI B1 I OUT= 0 mA ⎯ 170 ⎯Quiescent currentI B2I OUT= 50 mA ⎯ 550 850μA Stand-by current I B (OFF)V CT= 0 V ⎯⎯ 0.1 μAOutput noise voltage V NO V IN= V OUT+ 1 V, I OUT= 10 mA,10 Hz< = f< = 100 kHz,C NOISE= 0.01 μF, Ta = 25°C⎯ 30 ⎯μV rmsDropout volatge V IN− V OUT I OUT= 50 mA ⎯ 130 200mV Temperature coefficient T CVO−40°C< = T opr< = 85°C ⎯ 100 ⎯ ppm/°CInput voltage V IN⎯V OUT+ 0.2 V ⎯ 15 VRipple rejection R.R. V IN= V OUT+ 1 V, I OUT= 10 mA,C NOISE= 0.01 μF, f = 1 kHz,V Ripple= 500 mV p-p, Ta = 25°C⎯ 70 ⎯ dBControl voltage (ON) V CT (ON)⎯ 1.5⎯V IN V Control voltage (OFF) V CT (OFF)⎯⎯⎯ 0.4 V Control current (ON) I CT (ON)V CT= 1.5 V ⎯ 3 10 μA Control current (OFF) I CT (OFF)V CT= 0 V ⎯ 0 0.1 μAOutput Voltage Accuracy(V IN = V OUT + 1 V, I OUT = 50 mA, C IN = 1 μF, C OUT = 10 μF, C NOISE = 0.01 μF, T j = 25°C)Product No.SymbolMinTyp.MaxUnitTAR5S15 1.44 1.5 1.56 TAR5S16 1.54 1.6 1.66 TAR5S17 1.64 1.7 1.76 TAR5S18 1.74 1.8 1.86 TAR5S19 1.84 1.9 1.96 TAR5S20 1.94 2.0 2.06 TAR5S21 2.04 2.1 2.16 TAR5S22 2.14 2.2 2.26 TAR5S23 2.24 2.3 2.36 TAR5S24 2.34 2.4 2.46 TAR5S25 2.43 2.5 2.57 TAR5S26 2.53 2.6 2.67 TAR5S27 2.63 2.7 2.77 TAR5S28 2.73 2.8 2.87 TAR5S29 2.83 2.9 2.97 TAR5S30 2.92 3.0 3.08 TAR5S31 3.02 3.1 3.18 TAR5S32 3.12 3.2 3.28TAR5S33 3.21 3.3 3.39 TAR5S34 3.31 3.4 3.49 TAR5S35 3.41 3.5 3.59 TAR5S36 3.51 3.6 3.69 TAR5S37 3.6 3.7 3.8 TAR5S38 3.7 3.8 3.9 TAR5S39 3.8 3.9 4.0 TAR5S40 3.9 4.0 4.1 TAR5S41 3.99 4.1 4.21 TAR5S42 4.09 4.2 4.31 TAR5S43 4.19 4.3 4.41 TAR5S44 4.29 4.4 4.51 TAR5S45 4.38 4.5 4.62 TAR5S46 4.48 4.6 4.72 TAR5S47 4.58 4.7 4.82 TAR5S48 4.68 4.8 4.92 TAR5S49 4.77 4.9 5.03 TAR5S50V OUT 4.87 5.0 5.13VApplication Note1. Recommended Application CircuitThe figure above shows the recommended configuration for using a point regulator. Insert a capacitor for stable input/output operation. If the control function is not to be used, Toshiba recommend that the control pin (pin 1) be connected to the V CC pin.2. Power DissipationThe power dissipation for board-mounted TAR5Sxx Series devices (rated at 380 mW) is measured using a board whose size and pattern are as shown below. When incorporating a device belonging to this series into your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input voltage, output current and ambient temperature. Toshiba recommend that these devices should typically be derated to 70%~80% of their absolute maximum power dissipation value.Thermal Resistance Evaluation BoardCircuit board material: glass epoxy, Circuit board dimension:30 mm × 30 mm, Copper foil pad area: 50 mm 2(t = 0.8 mm)NOISEGND CONTROLControl LevelOperationHIGH ONLOW OFF3. Ripple RejectionThe devices of the TAR5Sxx Series feature a circuit with an excellent ripple rejection characteristic. Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops, the circuit is ideal for use in the RF blocks incorporated in all mobile telephones.4. NOISE PinTAR5Sxx Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitorbetween the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of 0.0047 μF or more between the NOISE pin and GND.The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE pin.Ripple Rejection − fTAR5S28 Input Transient ResponseFrequency f (Hz)Time t (ms)R i p p l e r e j e c t i o n (d B )C NOISE − V NTurn On WaveformNOISE capacitance C NOISE (F)Time t (ms)Co n t r o l v o l t a g e V C T (O N ) (V )O u t p u t n o i s e v o l t a g e V N (μV )μO u t p u t v o l t a g e V O U T (V )1458 10236 7 95. Example of Characteristics when Ceramic Capacitor is UsedShown below is the stable operation area, where the output voltage does not oscillate, evaluated using a Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current determines this area. TAR5Sxx Series devices operate stably even when a ceramic capacitor is used as the output capacitor.If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple rejection differs from that when a tantalum capacitor is used. This is shown below.Toshiba recommend that users check that devices operate stably under the intended conditions of use.Examples of safe operating area characteristicsEvaluation Circuit for Stable Operating AreaRipple Rejection Characteristic (f = 10 kHz~300 kHz)(TAR5S15) Stable Operating AreaOutput current I OUT (mA)(TAR5S50) Stable OperatingArea(TAR5S28) Stable Operating AreaOutput current I OUT (mA)Output current I OUT (mA)E q u i v a l e n t s e r i e s r e s i s t a n c e E S R (Ω)E q u i v a l e n t s e ri e s r e s i s t a n c e E S R (Ω)E q u i v a l e n t s e r i e s r e s i s t a n c e E S R (Ω)R i p p l e r e j e c t i o n (d B )(TAR5S30) Ripple Rejection – fFrequency f (Hz)V IN = V +F OUTCapacitors used for evaluationMade by Murata C IN : GRM40B105KC OUT : GRM40B105K/GRM40B106KO u t p u t v o l t a g e V O U T (V )Ou t p u t v o l t a g eV O U T (V )Output current I OUT (mA)(TAR5S15) I OUT – V OUTOu t p u t v o l t a g eV O U T (V )Output current I OUT (mA)(TAR5S18) I OUT – V OUTOu t p u t v o l t a ge V O U T (V )Output current I OUT (mA)(TAR5S20) I OUT – V OUTOu t p u t v o l t ag e V O U T(V )Output current I OUT(mA)(TAR5S21) I OUT – V OUTOutput currentI OUT (mA)(TAR5S22) I OUT – V OUTOutput current I OUT (mA)(TAR5S23) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S27) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S30)I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output currentI OUT (mA)(TAR5S25) I OUT – V OUTOu t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S31) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S28) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S29) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S32)I OUT – V OUTOu t p u t v o l t ag e V O U T (V )Output current I OUT (mA)(TAR5S33)I OUT – V OUTO u t p u t v o l t a g e V O U T (V )50 100 150Output current I OUT (mA)(TAR5S45) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )0 50 100 150Output current I OUT (mA)(TAR5S50) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S35) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )0 50 100 150Output current I OUT (mA)(TAR5S48) I OUT – V OUTO u t p u t v o l t a g e 圧 V O U T (V )0 50 100 150B i a s c u r r e n t I B (m A )B i a s c u r r e nt I B (m A )Input voltage V IN (V)(TAR5S15)I B – VINB i a s c u r r e nt I B (m A )Input voltage V IN (V)(TAR5S18)I B – VINB i a s c u r re n t I B (m A )Input voltage V IN (V)(TAR5S20)I B – VINB i a s c u r r en t I B(m A )Input voltage V IN (V)(TAR5S21)IB – V INInput voltageV IN (V)(TAR5S22)I B – V INInput voltage V IN (V)(TAR5S23)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S27)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S30)I B – V INB i a s c u r r e n t I B (m A )Input voltageV IN (V)(TAR5S25)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S31)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S28)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S29)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S32)I B – V INB i a s c u r re n t I B (m A )Input voltage V IN (V)(TAR5S33)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S45)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S50) I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S35)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S48) I B – V INB i a s c u r r e n t I B (m A )O u t p u t v o l t a g e V O U T (V )O ut p u t v o l t a g eV O U T (V )Input voltage V IN (V)(TAR5S15)V OUT – V INOut p u t v o l t a g eV O U T (V )Input voltage V IN (V)(TAR5S18)V OUT – V INOu t p u t v o l t a ge V O U T (V )Input voltage V IN (V)(TAR5S20)V OUT – V INOut p u t v o l t ag e V O U T(V )Input voltage V IN (V)(TAR5S21)VOUT – V INInput voltage VIN (V)(TAR5S22)V OUT – V INInput voltage V IN (V)(TAR5S23)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S27)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN(V)(TAR5S30)V OUT – V INO u tp u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S25)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN(V)(TAR5S31)V OUT – V INO u t p u t vo l t a g e V O U T (V )Input voltage V IN (V)(TAR5S28)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN (V)(TAR5S29)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S33)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN (V)(TAR5S32)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S45)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S50)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S48)V OUT – V INO u t p u tv ol t a g e V O U T (V )0 5 10 156Input voltage V IN (V)(TAR5S35)V OUT – V INO u t p ut v o l t a g e V O U T (V )O u t p u t v o l t a g e V O U T (V )O ut p u t v ol t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S15)V OUT – TaOu t p u t v ol t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S18)V OUT – TaOu t p u tv o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S20)V OUT – TaO ut p u tv o l t a g eVO U T (V )Ambient temperature Ta (°C)(TAR5S21)V OUT – TaAmbient temperature Ta (°C)(TAR5S22)V OUT – TaAmbient temperature Ta (°C)(TAR5S23)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S25)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S27)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S30)V OUT – TaO u t p u t v o l t a g eV O U T(V )Ambient temperature Ta (°C)(TAR5S31)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S28)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 2510075 50Ambient temperature Ta (°C)(TAR5S29)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S32)V OUT – TaO ut p u tv o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S33)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 2575 50100Ambient temperature Ta (°C)(TAR5S45)V OUT – TaO u t p u t v o l t a g eV O UT (V )Ambienttemperature Ta (°C)(TAR5S50)V OUT – TaO u t p u t v o l t a g e VO UT (V )Ambienttemperature Ta (°C)(TAR5S35)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S48)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50−50−25 0 25 10075 50Ambient temperature Ta (°C)I B – TaBiascurrentIB(mA)Ambient temperature Ta (°C)(TAR5S23~TAR5S50) V IN - V OUT – TaDropoutvoltageVIN-VOUT(V)Output current IOUT(mA)(TAR5S23~TAR5S50) V IN - V OUT – I OUTDropoutvoltageVIN-VOUT(V)Output current I OUT(mA)I B – I OUTBiascurrentIB(mA)Time t (ms)Turn On WaveformOutputvoltageVOUT(V)Time t (ms)Turn Off WaveformOutputvoltageVOUT(V)231123ControlvoltageVCT(ON)(V)ControlvoltageVCT(ON)(V)Ambient temperature Ta (°C)P D – TaP o w e r d i s s i p a t i o n P D (m W )−400 4012080Frequency f (Hz)V N – fO u t p u t n o i s e v o l t a g e V N (μV / H z )10100 1 k 10 k 100 kFrequency f (Hz)Ripple Rejection – fR i p p l e r e j e c t i o n (d B )10 100 1 k 10 k100 k 1000 kPackage DimensionsWeight: 0.014 g (typ.)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
WATCH OVER YOUR WORLDFROM ANYWHERE IN THE WORLDDon’t miss a thing with true-to-life video in real-time. LorexStratus Connectivity offers instant connection anywhere yougo with no recurring fees.162TBChannels 960H900TVL ResolutionHDD•Tablet / smartphone viewing and playback 1 •Lorex Stratus Connectivity - 3 step setup•Superior 960H Resolution - 34% more detailed and true-to-life images 2 •Real-time recording at 30fps per channel •24/7 security-grade hard drive•Instant email alerts with snap shot attachment •Continuous, scheduled and motion recording•Advanced mobile apps with live viewing, playback, video recording, and snap shot •PC and Mac compatible•HDMI cable included for simple connection to HD TVs 3 •H.264 video compression 4•Pentaplex operation - view, record, playback, back up & remotely control the system simultaneously •PTZ cameras supported (RS485). Remotely control through App •Accurate time stamps with NTP & Daylight Savings Time •3 video outputs (HDMI, VGA and BNC) to connect multiple monitors•Automatic firmware upgrades over Internet ensure your system is secure and up to date 5DVR FEATURES:130/90FT Night Vision900TVL ResolutionIP66•1.3 Megapixel image sensor (900 TVL resolution)•Lightweight yet extremely durable Polycarbonate housing•Integrated automatic Infrared Cut Filter (ICR) ensures accurate color representation in all lighting conditions •Day/Night mode: Picture automatically switches to B&W delivering better clarity in low light conditions •BrightNight viewing with enhanced low light image sensor•Close-up recognition at night with auto light compensation prevents wash-out effect•Night vision range up to 130ft (40m) in ambient lighting & up to 90ft (28m) away in total darkness 6 •Modern two-tone design - residential and business friendly •Split glass design minimizes IR reflection•Anti-glare feature ensures clear images under strong lighting conditions •3.6mm wide-angle lens captures a wide field of view •Vandal resistant design with cable pass-through bracket •Ideal for outdoor & indoor applications (IP66 Rated) 7•Removable camera base and integrated 3ft camera cable for hassle-free and flexible installation •Versatile mounting options: ceiling, counter or wall mountable •60ft BNC/Power extension cable included per camera•Energy-efficient CEC (California Energy Commission) compliant power adapter includedCAMERA FEATURES:SEE IT ALL -IN GREATER DETAILKeep an eye on your home or business day or night with this high-resolution security camera.SECURITY CAMERA SYSTEM•Latest 960H Sony EXview™ II image sensor for excellent low light performance 8•Sony Effio™ video image processor delivers up to 700TV lines of resolution •10X Optical Zoom and 10X Digital Zoom to focus in on even the finest details •Complete area coverage with fast 360 degrees per second panning speed •Program preset viewing points when connected to a DVR•ClearNight technology with Digital Noise Reduction improves low light performance and recording efficiency by up to 30%•Accurate colors with Lorex’s automatic light filtering technology •Easy installation with pre-attached wall mount 9 •Weatherproof (IP66) rated 7•Connects to any Lorex Eco™ or Edge™ series DVR for local or remote operation •100ft all-in-one extension cable included for installation location flexibilityPTZ CAMERA FEATURES:VIEW THE ENTIRE SCENE WITH PAN-TILT-ZOOMDon’t miss a thing with advanced pan-tilt-zoom capabilities and exceptional low-light performance in a compact package.960 H700TVL Resolution10XOptical Zoom360°/SECPanning SpeedSECURITY CAMERA SYSTEMSYSTEMOperating System Linux (embedded)Pentaplex SimultaneousView, Record, Playback, Backup & Remote Monitoring Number of Channels 8/12/16/24chInputs/OutputsVideo IN 8/12/16/24 x 1Vp-p, CVBS, 75ohms, BNCVideo OUT 1 x BNCVGA OUT Y esHDMI Y esAudio IN 8 ch 8 line IN (RCA), G.711, 12/16/24 ch 4 line in(RCA),G.711Audio OUT 1 line OUT (RCA), G.711USB Port 1 at the back, 1 at the frontAlarm IN 8 Alarm INAlarm OUT 1 Alarm OUTVideo Output Resolution 1920x1080 HDMI, 1440x900, 1280x1024, 1024x768PTZ control RS-485 Pelco D & P ProtocolDisplayLive Display 8 ch: 1, 4, 912 ch: 1, 4, 9, 1216 ch: 1, 4, 9, 1624 ch: 1, 4, 9, 16, 24Live Display Speed 8 ch: 240 NTSC, 200 P AL12 ch: 360 NTSC, 300 P AL16 ch: 480 NTSC, 400 P AL24 ch: 720 NTSC, 600 P ALOSD ON/OFFSystem Navigation USB Mouse, IR Remote Controller, Front PanelMotion Area Setting Adjustable grid (30x44) NTSCAdjustable grid (36x44) P ALSensitivity levels 8Firmware Upgrade Automatic over the Internet & via USB device and NetworkUser Authority By user groupTime Synchronization Auto time sync by NTP serverRECORDINGVideo Compression H.264Audio Compression G.711Recording Resolution NTSC:960H:960x480, 960x240, 480x240D1 mode: 720x480(D1), 720x240(2CIF), 360x240(CIF)P AL:960H: 960x576, 960x288, 480x288D1 mode: 720x576(D1), 720x288(2CIF), 360x288(CIF) Recording Resolution Setting Per camera for different resolutionsRecording Quality Control 3 levelsRecording Schedule By hour, by day, by recording mode, by motion, by alarm, by chPre Recording Max.10 SecsPost Recording Max.5 MinutesReliability W atch-Dog, Auto-recovery after power failure Covert Video Y esPLA YBACKPlayback Channel 8 ch: 1~8 Adjustable, 12 ch: 1~12 Adjustable,16/24 ch: 1~16 AdjustablePlayback Speed V ariableMax 16xPlayback Players Backup PlayerSearch By time & eventLog Search Up to 100,000 lines for system, configuration changes,motion/alarm detected, account, record and storage Audio Play Y esSTORAGE & ARCHIVEStorage 8/12/16 ch: Up to 1 HDD’s (SA T A)24 ch: Up to 2 HDD’s (SA T A)Maximum Capacity 8/12/16 ch: up to 1 x 4TB24 ch: up to 2 x 4TBBackup Media USB Flash Drive & HDDBackup File Format H.264 file (A VI generator included) CONNECTIVITYCloud Connection Lorex Stratus ConnectivitySupported Operating Systems Windows™Mac OSRemote Software Client Software (PC) & Safari (Mac)Email notification T extwith snapshotInstant Smart Phone iPad®, iPhone®, Android™& T ablet Support †DDNS Free Lorex DDNSSystem Configuration Full setup configuration over networkPorts Programmable by UserNetwork Protocol TCP/IP / DHCP / UDP / DDNS / PPPoENetwork Interface 10/100-Base-TX, RJ-45Network Speed Control 48Kb ~ 8MB/sec.GENERALPower Consumption Approx. 10 watts (no HDD included)Supply V oltage 8/12/16 ch: 100V AC-240V AC, 12VDC , 2A,50/60Hz24 ch: 100V AC-240V AC, 12VDC , 5A,50/60HzUnit Dimensions 8/12/16 ch: 11.8”/300mm x 9.9”/251mm (W x D x H) x 2.4”/60mm24 ch: 14.9” /380mm x13.3”/340mm x1.9”/50mmUnit W eight (KGs) 8 ch: 1.7 kg/3.75 Lbs12 ch: 1.95 kg/4.3 Lbs16 ch: 2.0 kg/4.43 Lbs24 ch: 3.54 kg/7.8 LbsOperating temperature 32° ~ 104° F / 0° ~ 40° CHumidity10 ~ 90% NCCVC7721PK4BImage Sensor 1/3” 1.3 MP Sony Exmor® CMOS Video Format NTSCEffective Pixels H: 1305 V: 1049Resolution 900 TVLScan System 2:1 InterlaceSync System I nternalS / N Ratio 48dB (AGC Off)Iris AESAES Shutter Speed 1/60 ~ 1/100,000 sec.Min. Illumination 0.01 Lux without IR LED0 Lux with IR LEDVideo Output Composite 1.0Vpp @ 75ohmLens / Lens T ype 3.6mm F2.0 / FixedFOV (Diagonal) 92°°T ermination BNC T ypeIR LED Qty. / T ype 24 pieces / 850nmNight Vision Range 130ft (40m) / 90ft (28m)Power Requirement 12V DC ±10%Power Consumption Max. 320mA (w / IR) Operating T emp. Range –4° ~ 122°F / –20° ~ 50°C Operating Humidity Range < 80% RH Environmental Rating I P66Weight (including stand) 0.6lbs / 0.2kgLZC7092BImage Sensor: 1/3” Sony Ex-View HAD CCD II Video Format: NTSCEffective Pixels: 976(H) x 494 (V) Resolution: up to 700 TVLRange: 360° Pan (Endless)160° Tilt (Auto-Flip) Pan/Tilt Speed: Max 360°/Sec.Zoom: 10x Optical Zoom & 10x Digital Zoom Protocol: Pelco-D, Pelco-PMin. Illumination: 0.7 Lux in Color0.02 Lux in Black and WhiteLens/Lens T ype: Auto Focus / 3.8-38mm F 1.8S/N Ratio: 50db (AGC Off)Iris: Auto IrisDay/Night: IR Cut Filter (ICR)T ermination: BNC Video / RS485 / DC Power Video Output: Composite 1.0Vpp @ 75ohm Power Requirement: 12V DC ±10%Power Consumption: Max. 850mAOperating T emperature Range: -4°F ~ 122°F / -20°C ~ 50°C Operating Humidity Range: within 90%RHIndoor/Outdoor: Both (IP66)Weight: 2.9lbs / 1.3kgProduct Information:Disclaimers:1. Requires a high speed internet connection and a router (not included). An upload speed of 1Mbps is recommended for the best video performance. Up to 3 devices may connect to the system at the same time. For the latest list of supported apps and devices, check /support.2. Optimized when used with 960H compatible cameras. DVR is backwards compatible and supports different camera inputs: standard resolution and 960H.3. High definition recording not supported, recording resolution is limited to a maximum of 960x480 per channel. Image quality and resolution is dependent on the type of camera connected to the DVR.4. Recording time may vary based on recording resolution & quality, lighting conditions and movement in the scene.5. Both firmware and software must be updated to latest version to ensure remote connectivity. Always update to the latest software (available at ) after upgrading the DVR firmware.6. Stated IR illumination range is based on ideal conditions in typical outdoor night time ambient lighting and in total darkness. Actual range and image clarity depends on installation location, viewing area and light reflection / absorption level of object.7. Not intended for submersion in water. Installation in a sheltered location recommended.8. This camera features an ultra-low light sensitive image sensor and therefore does not feature Infra-Red LEDs. The camera requires ambient lighting (for example, street/building lighting, star or moon light) to render a night time image. In total darkness (zero Lux) the camera will not produce a night time image and therefore the camera should not be installed in completely dark areas.9. Wall mount only. Ceiling mount not supported.All trademarks belong to their respective owners. No claim is made to the exclusive right to use the trademarks listed, other than the trademarks owned by Lorex Technology Inc. We reserve the right to change models, configurations or specifications without notice or liability. Product may not be exactly as shown. Images are simulated.DVR Inputs & OutputsDimensions:8/12/16 Channel DVRs24 Channel DVR380mm/14.9”300mm/11.8”MODEL CONFIGURATION PACKAGE W x D x H Inches & mm WEIGHT CUBE UPC Code LH16162TC12Z1B16 ch ECO6 DVR with 2TB HDD & 12 x 900TVL Cameras (CVC7721PK4B) & 1 x 700TVL PTZ Camera (LZC7092B)Brown Box508mm x 444mm x 513mm 20.0” x 17.5” x 20.2”(estimated)21.8 kg/48.2 lbs (estimated)0.04cbm /1.62cft6-95529-00115-9DVR Includes 16 Channel DVR with Pre-Installed HDD, HDMI Cable, Remote Control, Power adapter, Mouse, Ethernet Cable, Quick Start Guides. Bullet Camera Includes12 x Cameras, 12 x Mounting kit with Allen key, 12 x 60ft BNC / power extension cables, 3 x 4-in-1 Power adapters.PTZ Camera Includes1 x PTZ Camera, 1x 100ft BNC/Power/RS485 Cable, 1 x 13V DC power adapter, 1 x Wall Mount (pre-attached), 1 x Instruction Manual, 1 x Mounting kitCVC7721PK4BLZC7092B。
TEA2025
1、TEA2025完美替换型号YG2025,D2025、YD2025、ULN2025
2、立体音频放大器
3、描述(description)
UTC2025是一个完整(monolithic integrated)的十六脚双排塑料封(16-pin plastic dual in line package)
装音频放大器,它是为轻便的盒式录音机(portable cassette)播放器和收音机而设计的。
4、特征(features)
工作电压低至3V
很少的外部元器件
高通道隔离
电压增益可达45dB(随外部电阻调整)
软件中断
内部温度保护
5、管脚配置/分布
6、模块图解
7、绝对最大额定值(absolute maximum ratings)
8、引脚功能说明
9、电气特性
10、应用电路
桥式放大
立体声放大
10、标准性能特性
偏压与输出功率关系坐标(功放阻值为40欧)
偏压与输出功率关系坐标(功放阻值为8欧)
偏差与输出频率关系图
输出功率与供电电压关系图。
产品特性单电源供电:1.8V 或3V 低功耗:32mW (电源电压1.8V )54mW (电源电压3.0V )信噪比(SNR):75dBFS(5MHz Fin 、10MSPS)无杂散动态范围(SFDR):95dBFs(5MHz Fin 、10MSPS)采样频率可以低至1MSPS CMOS 输出并口配置模式32引脚(5mm ×5mm )QFN 封装支持内置或外置参考电压源应用通信便携式医学成像多通道数据采集产品聚焦1.管脚兼容ADI 公司LTC2245系列2.单电源供电,支持1.8V 或3V 两档电源电压3.CMOS 输出4.并口配置支持1.8V~3.6V 电平功能框图图 1.功能框图修订历史(内部)版本时间位置修订内容V1.02021/11/09手册初稿目录产品特性 (1)应用 (1)产品聚焦 (1)功能框图 (1)修订历史(内部) (2)目录 (3)概述 (4)技术规格 (5)ADC直流规格 (5)ADC交流规格 (6)数字规格 (7)时序规格 (7)时序图 (8)绝对最大额定值 (9)热特性 (9)ESD警告 (9)引脚配置和功能描述 (10)典型工作特性 (12)等效电路 (13)应用信息 (13)转换器工作 (13)模拟输入 (13)输入滤波 (14)变压器耦合电路 (14)放大器电路 (15)参考电平 (15)REFH,REFL (15)时钟输入 (15)输出数据格式 (16)输出停用 (16)睡眠模式 (16)应用信息 (17)设计指南 (17)外形尺寸 (18)名词对照表 (19)概述ZYL2245是一款单通道、14位10MSPS低噪声模数转换器(ADC),旨在支持需要高性能、低噪声、低成本、小尺寸、多功能的数据采集和通信应用。
ZYL2245支持3V或1.8V两种电源模式。
这款双通道ADC内核采用差分、多级流水线结构,集成了输出纠错逻辑,集成内置基准源,支持引入外置基准源作为ADC的基准电压。
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Vodafone Group PlcInterim ManagementStatement For the 3 months ended 31 December 20136 February 2014DisclaimerInformation in the following presentation relating to the price at which relevant investments have been bought or sold in the past or the yield on such investments cannot be relied upon as a guide to the future performance of such investments. This presentation does not constitute an offering of securities or otherwise constitute an invitation or inducement to any person to underwrite, subscribe for or otherwise acquire or dispose of securities in any company within the Group.The presentation contains forward-looking statements within the meaning of the US Private Securities Litigation Reform Act of 1995 which are subject to risks and uncertainties because they relate to future events. Some of the factors which may cause actual results to differ from these forward-looking statements are discussed on the final slide of the presentation.The presentation also contains non-GAAP financial information which the Group’s management believes is valuable in understanding the performance of the Group or the Group’s businesses. However, non-GAAP information is not uniformly defined by all companies and therefore it may not be comparable with similarly titled measures disclosed by other companies, including those in the Group’s industry. Although these measures are important in the assessment and management of the business, they should not be viewed in isolation or as replacements for, but rather as complementary to, the comparable GAAP measuresVodafone, the Vodafone Speech Mark, Vodacom, Power to You, and Vodafone Red are trademarks of the Vodafone Group. Other product and company names mentioned herein may be the trademarks of their respective owners.Q3 13/14 highlightsFinancial performance •Q3 Group service revenue -4.8%, continued challenges in Europe -9.6%•AMAP grew +5.5%;India +13.2% and Vodacom +3.5%,supported by strong data growth •Strong Europe contract net additions driven by Red and 4G commercial strategy •Improving fixed line trends, customer base +4.5% to 6.5m•Full year guidance confirmed: pro forma AOP around £5.0bn and FCF £4.5bn-£5.0bnStrategic progress •9.8m Vodafone Red customers, well on track for 11-12m by year end•4G available in 13 countries with 2m customers, data usage double that of 3G plans •Enterprise acceleration in growth areas: M2M +30%,VGE +4.5%•Project Spring underway; accelerated network build-out in selected markets •Unified communications: Portugal fibre build on-track; Spain commercial launch in April •Acquisition of 76.6% of Kabel Deutschland, domination agreement process on-going •US transaction expected to complete 21 February 2014Group: similar service revenue trends to prior quarterQ3 13/14£bn Q3 13/14YoYgrowth(%)Q2 13/14YoYgrowth(%)Group service revenue9.9 (4.8) (4.9) By regionEurope 6.5 (9.6) (9.6) AMAP 3.2 5.5 5.6 By serviceMobile in-bundle revenue 4.0 6.6 7.3 Mobile out-of-bundle revenue 3.0 (11.8) (11.6) Mobile incoming revenue 0.8 (19.5) (21.0) Fixed line revenue 1.7 (1.1) (1.4) Other service revenue 0.4 (19.5) (18.0) •Q3 service revenue excluding MTRs: Group -2.4%Europe -7.0%AMAP +7.4% •Capex £1.8bn; +12% year to date •FCF £1.0bn; slight reduction due to higher capex•Net debt £31.5bn, will reduce following completion of the US transaction10,193(205)32410,312248(406)34(225)(107)9,856Service revenue Q3 12/13FXM&A Organic base Q3 12/13In-bundleOut-of-bundleIncoming MTROther Service revenueQ3 13/14•In-bundle revenues +7ppt to 59% of Europe mobile service revenue, driven by integrated plans •Other service revenue: decline in visitor revenues and reduced involvement with MVNOsGroup: decline in underlying service revenue(£m)1Includes joint ventures on a proportionate basis and all growth rates shown are organic unless otherwise stated 2Commercial strategy driving Europe contract net additions(135)8272432Q4 12/13Q1 13/14Q2 13/14Q3 13/14Germany UK Spain Europe•Growth in Europe contract net additions driven by:–Increasing 4G and Red penetration –Additional customer investment•Improving consumer contract churn•Europe consumer contract base +1.6% •Contract customers now 45% of total Europe customer base, +2ppt(‘000s)•4G available in 27 cities •Data users +13% to 9.8m•Signs of price recovery after summer 2013 promotions •1.4m Red users 1; 97% of consumer contract gross additions, in-bundle revenue +10.6%•Fixed line revenue +1.8%; 28k net broadband additions 1•Price pressure on base ARPU•1,040 sites upgraded to high capacity backhaul •4G leadership; 67% coverage•Increased A&R spend; improving commercial performance, contract net additions 123k•62% contract smartphone penetration, +11ppt •KDG strong broadband net additions performance 88k GermanyService revenue growth (%)Increased investment in Germany; signs of price recovery in Italy(0.2)(3.5)(5.1)(6.1)(7.9)0.5 (1.5) (2.8) (3.7) (6.2) Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14Service revenue growth Excluding MTRsItalyService revenue growth (%)(13.8)(17.0)(17.6)(15.7) (16.6)(9.3) (10.3) (9.9) (12.3) (12.4) Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14Service revenue growth Excluding MTRs•Fast 4G rollout; now available in 19 cities •FTTH: commercial launch in April•Stabilising contract base; 1.0m Red customers; 30% include fixed line•Fixed service revenue +5.7%, boosted by Red convergent offers; 57k net broadband adds•MVNO players remain competitive in convergent offers•4G available in 13 cities with over 370,000 users; 90% outdoor coverage in London 1•2.3m Red customers (36% of consumer contract base)•Red 4G data usage double that of 3G•77% contract smartphone penetration, +4ppt •Over 2,700 sites now connected to CWW networkUKService revenue growth (%)UK 4G boosting data usage; Spain contract base stabilising(5.2)(6.6)(4.5)(4.3)(5.1)(2.1)(3.5)(2.5) (2.5) (3.3) Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14Service revenue growth Excluding MTRsSpainService revenue growth (%)(11.3)(12.7)(10.6) (16.1)(14.1)(9.6) (11.0) (9.4)(12.0)(10.0) Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14Service revenue growth Excluding MTRsSouth Africa•Successful summer promotions; 1.3m net additions •Data users +17% to 16m; 7.2m smartphone users •Continued negotiations to acquire Neotel •Legal challenge to proposed MTR cuts International•Service revenue +15.1%; customer growth driven by successful bundle price plans •1.3m prepaid net additions•4.9m net additions, over 160m customers •Blended ARPU +9.6%•Browsing: 10% of service revenues; of which 39% is 3G•Data users +38% to 46m; 5m 3G users, average usage 730MB•Accelerated 3G site rollout; over 2,200 sites in Q3 •Spectrum auction on-goingIndiaService revenue growth (%)AMAP: strong customer net adds; growing demand for data9.27.813.813.213.2Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14VodacomService revenue growth (%)1.9(0.7) 3.24.63.5(1.7) (2.0)(0.1)0.20.6 Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14Vodacom Group South Africa31.519.512.0Dec 2013US transaction Pro formaKDG 76.6%Strong financial position – continue to target low single A ratingQ3 13/14£bnOpening net debt 30 Sept 13 (25.7) Free cash flow 1.0 KDG acquisition 3(7.0)Spectrum (0.1) Foreign exchange 0.4 Other(0.1) Closing net debt 31 Dec 13(31.5)Closing net debt excluding JVs (29.8)Pro forma net debt post US transaction (£bn)2Includes joint ventures on a proportionate basis 1.Calculated at £1 = US$1.62 as at Dec 131Expected timetable for US transaction24th Share consolidation and commencement of trading of new ordinary shares and ADSs 4th Cash payment settled21st Closing of TransactionsFebruary 2014March 201424th Ex-date and settlement of Verizon shares19th Announcement of number of Verizon Consideration Shares Material conditions✓Vodafone shareholder approval ✓Verizon shareholder approval ✓Regulatory approvals and consents •UK court approval (for Return of Value) •Implementation of pre-completion reorganisationAccelerating data growth…Supported by wider 3G & 4G footprint(number of sites ‘000s)Data traffic growing (Petabytes)•4G 17% of Europe data traffic •AMAP 40% of Group data traffic, +10ppt •AMAP 3G +135%Data experience improving quickly… (% of data sessions)Accelerated rollout of 3G sites in India (number of sites ‘000s)•2,000+ 3G sites deployed in Q3•3G now 16% of AMAP traffic, +5ppt •2nd highest dataconsumption across the GroupDec 11Dec 133G2G119136+14%7685> 1 Mbps all devicesQ3 12/13Q3 13/14Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14AMAP EuropeDec 12Dec 13AMAPEurope+22% •Around 14,000 4Gsites across Europe •60% of 3G sites at 43.2Mbps•AMAP 3G sites +31%113137+64%87143•80% of data sessions on top tier devices reach >3Mbps4G case studies: around 2m 1 4G customers in EuropeUK: sports and music included in 4G offer (Data usage)736764 4743 22 19 554241 322569EmailSearch enginesSocial networking IMNews Music Video clipNot yet activated Sky Spotify3G4G2.1x2.4x2.7x1.Customers with a 4G handset and on a 4G plan in 9 European markets UK: apps used daily (% of users)4G3G£24£23£21£33 £50 £43 DE IT ESMobile contract base4G plan & device ARPU uplift 2£32£38UK Red 3GRed 4G incl. content+19%35871,370Red 3GRed 4G+130%Data usage UK and Italy (MB)4701,590Smartphones 4G plan & device3xUKITQ2 12/13Q3 12/13Q4 12/13Q1 13/14Q2 13/14Q3 13/14EnterpriseConsumerRed: protecting in-bundle service revenue; encouraging data usageConsumer and Enterprise customer baseConsumer ARPU dilution stabilising 2Red driving growth of in-bundle mobile service revenue(%)Encouraging signs in both voice and data usage•Monthly average voice MoU per user 3 +20% •Protected against disintermediation •Roaming data usage +137%380750Before Red After Redx2•18 markets•Main four European markets: 23% ofcustomers 1 and 34% of revenue 1•On track to achieve 11-12mcustomers by March 2014Before RedEarly stages of RedRecent trends1.EU4 consumer contract mobile base excluding data only SIMs, as at December 2013Monthly average data usage per user (MB)3633653 57 526949 566759DE IT UK ES Europe Q3 12/13Q3 13/149.8m-£2-£5 -£5-£1 -£1 AllNon-RedRedRed Q2Red Q3-£3 -£3-£1£1Italy 37 cities (FTTH Milan + VDSL other cities)GermanyVDSL, 27% coverageNetherlands Reggefiber; 21% coverageUnified communications and fixed line progressAccelerate through Project SpringApproachNGNwholesaleFibredeployment M&AUK CWW acquisition in 2012; successful integrationGermanyKDG acquisitionImproving fixed line net adds (‘000s)-75-55-35-15525456585Q4 12/13Q1 13/14Q2 13/14Q3 13/14DEITESPTKDGItaly Preparing self-build FTTCPortugalCo and self-build, over 700k HH passedSpainCommercial launch April 20141Q3 statusSummaryFinancial performance •AMAP growing strongly, accelerating data demand•Europe conditions remain difficult, grounds for optimism•Strong balance sheet and improving dividend cover post US transaction •Full year pro forma guidance confirmedStrategic progress •Establishing a stronger network and service differentiation •4G and Red plans gaining momentum•Continued progress in unified communications capability •Enterprise leadership strengthening•Project Spring underway and on-trackQ&ATurkey NetherlandsEgypt•Mobile in-bundle service revenue +4.3%; driven by Red plans •4G rollout according to plan •Continued popularity of no frills segment, c.60% of market gross addsAustralia PortugalIreland3.9%3.6% (6.0%)(8.0%)(19.9%)0.3% •Continued strong underlyinggrowth, +11.0% excl. MTRs •Data revenue +47%: smartphone penetration +11ppt to 30.1% •Continued success with Red: both in consumer and enterprise•New ‘worry -free’ integrated tariffslaunched including Vodafone Red •Usage stabilised following end of curfews•Progress in unified comms: now cover over 700k homes with FTTH•Fixed revenue +30% led by customer growth •Increased competitive pressures around converged offers•Improved level of performance inoperational KPIs •Focussed customer base management •NPS improving in both prepaid and contract%Q3 organic service revenue growth(6.6%)1.1% (5.2%) (6.5%)Other markets•Strong growth in consumer contract •4G services launched in 6 cities and 31 towns •Prepaid market continued to declineMore information/investorUpcoming dates@VodafoneIRDownload our iPad appFollow us on Twitter **************.uk +44 (0) 7919 990 230Contact usVisit our website for more informationAGM29 JulyFull year results20 MayFor definitions of terms please see /content/index/investors/glossaryQ1 IMS 25 JulyForward-looking statementsThis presentation contains “forward-looking statements” within the meaning of the US Private Securities Litigation Reform Act of1995 with respect to the Group’s financial condition, results of operations and businesses and certain of the Group’s plans and objectives. In particular, such forward-looking statements include: statements relating to the Group’s future performance generally; expectations regarding growth in customers and usage, especially in emerging markets and mobile data, and technological advancements generally; statements relating to the impact of MTRs and spectrum spend; statements in relation to the launch of new products and service offerings; statements and expectations in relation to the acquisition of CWW and Kabel Deutschland, and in relation to Project Spring, as well as existing and proposed network sharing initiatives, and the anticipated benefits associated therewith; statements in relation to the US transaction; statements and assumptions relating to movements in foreign exchange rates; and expectations regarding adjusted operating profit, service revenue growth, anticipated cost reductions, EBITDA, EBITDA margin, free cash flow, costs), tax settlements, especially in India, and capital expenditures.Forward-looking statements are sometimes, but not always, identified by their use of a date in the future or such words as “will”, “anticipates”, “aims”, “could”, “may”, “should”, “expects”, “believes”, “intends”, “plans” or “targets”. By their nature, forward-looking statements are inherently predictive, speculative and involve risk and uncertainty because they relate to events and depend on circumstances that may occur in the future. There are a number of factors that could cause actual results and developments to differ materially from those expressed or implied by these forward-looking statements. These factors include, but are not limited to, the following: changes in macroeconomic or political conditions in markets served by operations of the Group that would adversely affect the level of demand for mobile services, and changes to the associated legal, regulatory and tax environments; greater than anticipated competitive activity, from both existing competitors and new market entrants, which could require changes to the Group’s pricing models, lead to customer churn and/or make it more difficult to acquire new customers; levels of investment in network capacity and the Group’s ability to deploy new technologies, products and services in a timely manner, particularly mobile data content and services, or the rapid obsolescence of existing technology; higher than expected costs or capital expenditures; rapid changes to existing products and services and the inability of new products and services to perform in accordance with expectations, including as a result of third party or vendor marketing efforts; the ability of the Group to integrate new technologies, products and services with existing networks, technologies, products and services; the Group’s ability to generate and grow revenue from b oth voice and non-voice services and achieve expected cost savings; a lower than expected impact of new or existing products, services or technologies on the Group’s future revenue, cost structure and capit al expenditure outlays; slower than expected customer growth, reduced customer retention, reductions or changes in customer spending and increased pricing pressure; the Group’s ability to expand its spect rum position, win 4G/3G allocations and realise expected synergies and benefits associated with 4G/3G; the Group’s ability to secure the timely delivery of high quality, reliable handsets, network equipmen t and other key products from suppliers; loss of suppliers, disruption of supply chains and greater than anticipated prices of new mobile handsets; changes in the costs to the Group of, or the rates the Group may charge for, terminations and roaming minutes; the Group’s ability to realise expected benefits from acquisitions, partnerships, joint ventures, franchises, brand licences or other arrangements with third parties, particularly those related to the development of data and internet services; acquisitions and divestments of Group businesses and assets and the pursuit of new, unexpected strategic opportunities, which may have a negative impact on the Group’s financial condition and results of operations; the Group’s ability to integrate acquired business or assets and the imposition of any unfavourable conditions, regulatory or otherwise, on any pending or future acquisitions or dispositions; the extent of any future write-downs or impairment charges on the Group’s assets, or restructuring charges incurred as a result of an acquisition or disposition; dev elopments in the Group’s financial condition, earnings and distributable funds and other factors that the Group’s Board of Directors takes into account in determining the level of dividends; the Group’s ability to satisfy working capital requirements through borrowing in the capital markets, bank facilities and operations; changes in foreign exchange rates, including, particularly, the exchange rate of pounds sterling to the euro and the US dollar; changes in the regulatory framework in which the Group operates, including the commencement of legal or regulatory action seeking to regulate the Group’s permitted charging rates; the impact of legal or other proceedings against the Group or other companies in the mobile communications industry; and changes in statutory tax rates and profit mix, the Group’s ability to resolve open tax issues an d the timing and amount of any payments in respect of tax liabilities.Furthermore, a review of the reasons why actual results and developments may differ materially from the expectations disclosed or implied within forward-looking statements can be found by referring to the information contained under the heading “Forward-looking statements” in the Group’s half-year financial report for the six month s ended 30 September 2013 and under the headings “Forward-looking statements” and "Principal risk factors and uncertainties" in Vodafone Group Plc's annual report for the year ended 31 March 2013. The half-year financial report and the annual report can be found on the Group’s website (/investor). All subsequent written or oral forward-looking statements attributable to the Company or any member of the Group or any persons acting on their behalf are expressly qualified in their entirety by the factors referred to above. No assurances can be given that the forward-looking statements in this presentation will be realised. Except as otherwise stated herein and as may be required to comply with applicable law and regulations, Vodafone does not intend to update these forward-looking statements and does not undertake any obligation to do so.。
目 录视频输入和输出 (6)报警 (7)视频显示 (7)编码输出 (7)解码输入 (7)摄像机 (9)主监视器 (9)电源 (9)辅助监视器 (9)VCR 入 (9)VCR 出 (9)录像机与处理器连接 (9)报警输入 (10)报警输出 (10)远程控制 (10)监视器校准........................... (11)摄像机检查 (11)权限设置 (13)菜单设置 (13)SYSTEM SET(系统参数设置) (14)CAMERA SET(摄像机设置) (15)PICTURE QUALITY(摄像机画质设置) (16)MOTION SET(移动报警侦测设置) (17)RECORD SET(录像参数设置) (18)PRIOR CHANNEL(录像画面画质设置) (18)PROTOCOL SET(通讯协议设置) (19)EVENT LOGO(报警事件记录) (20)前面板外观图 (22)SHIFT键 (22)全画面[ZOOM]键 (24)画中画[↑]键 (24)4画面[↓]键 (25)9画面[←]键 (25)16画面[→]键 (25)LIVE[+] (25)VCR[-] (26)AUTO[ENTER] (26)CALL[EXIT] (26)画面显示模式 (28)LOSS报警 (29)SENSOR报警 (29)MOTION报警 (29)报警确认 (30)回放(VCR) (30)CALL Monitor功能 (30)画面冻结(FREEZE) (31)电子放大(ZOOM) (31)自动跳台(AUTO) (31)选择功能(SWAP) (32)录像机设置功能(SET VCR) (32)快球控制(PTZ) (32)系统连接图 (33)背面板及连接端子 (33)报警接口连接示意图 (34)远程串口控制接口及通讯协议 (35)㈠安全注意事项恭喜阁下!你已经拥有本公司制造的一个优质产品,此产品在运输前已经经过严格质量标准检验!在仔细维护下,此产品一般可以可靠地运行多年。
前言此機種是一台具有32位元RISC處理器的高性能單晶片數位儲存系統,可同時處理錄影、即時監控、回放、CD燒錄、USB備份等功能並且可直接透過網路執行遠端監控。
人性化的使用介面,可透過螢幕選單、前面板控制按鍵及多功能無線遙控器操作。
搭配USB裝置及內建CD燒錄機方便使用者下載錄影影像及更新韌體。
單晶片數位儲存系統可提供高畫質影像和強大的儲存及系統擴充功能。
可使用2個內建硬碟(可熱抽換硬碟x1),或選配2個外接SATA II RAID (最高儲存容量可達4TB)。
最高可連結255台單晶片數位儲存系統及4個矩陣警報輸出。
可直接透過IE瀏覽器或附加軟體來連結網路,執行遠端監控。
而飛梭功能可協助快速搜尋錄影資料。
單晶片數位儲存系統安全性考量十分周全,軟體看門狗(WDT),使用者密碼管理,及攝影機切換顯示等先進防護措施,讓使用者在輕鬆操作外,更可以高枕無憂。
•16門影像輸入,即時影像可達480fps•內建CD燒錄機•ISO-9600相容CD格式可隨插即用•HTTP網路頁面操控包括遠端PTZ控制,回放及即時監控•回放速度可達120 CIF•可用小時為單位安排一週的警報、動態偵測及一般錄影排程•內建VGA 解析度最高可達1280*1024 (進階單晶片數位儲存系統) / 單晶片數位儲存系統選購品•4個矩陣輸出(進階單晶片數位儲存系統)可支援螢幕選單設定•2個主要影像輸出及內建多功能分割視窗可2倍放大或凍結影像•可收錄一個聲音輸入及輸出•多功能錄影、回放、CD燒錄、網路遠端即時監控•可搭配一個外接SATA II硬碟及一個內建SATA II硬碟•2個外接SATA II RAID,最高錄影容量可達4TB•192格動態警報區域,可供自由設定•可使用USB2.0相容的隨身碟、外接CD燒錄機執行備份•飛梭旋鈕操作,選單設定簡易方便CAUTIOIN請由專業支技術人員進行安裝及維修請確認將電源供應器之電壓是否已切換至正確位置請確認將電源供應器之電壓是否已切換至正確位置,,並使用符合安全規格之各國電源連接線並使用符合安全規格之各國電源連接線,,以免發生危險請將本系統放置於平坦穩固之處請將本系統放置於平坦穩固之處,,並避免震動導致損壞本系統因高速影像處理本系統因高速影像處理,,所產生熱度較高所產生熱度較高,,故請勿放置於靠近高熱故請勿放置於靠近高熱、、濃煙或多塵之處濃煙或多塵之處,,並注意通風散熱務必良好請勿放置於潮濕或水氣多之處請勿放置於潮濕或水氣多之處,,以免機器鏽蝕故障請避免掉落金屬零件請避免掉落金屬零件、、雜物或滲入液體到機器內部雜物或滲入液體到機器內部,,造成短路損壞由室外接入之視訊電纜線由室外接入之視訊電纜線,,請務必接地請務必接地,,以免雷擊損及系統商標 Microsoft, Windows 2000, Windows XP , Internet Explorer 是Microsoft Corporation 在美國和(或)其他國家的商標或註冊商標。
5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,Write CRC = Disable.6.The write timing parameter (t WTR_L) is referenced from the first rising clock edge afterthe last write data shown at T13.Figure 188: WRITE (BC4) Fixed to READ (BC4) Fixed with 1 t CK Preamble in Different Bank GroupT0T1T7Command DQ CK_t CK_cDQS_t,DQS_cT8T9T10T11T12T13T23T14T22T24T25T26T27T28T29Bank GroupAddress Address Notes: 1.BC = 4, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1 t CK, WRITE preamble =1t CK.2.DI b = data-in from column b .3.DES commands are shown for ease of illustration; other commands may be valid atthese times.4.BC4 setting activated by MR0[1:0] = 10.5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,Write CRC = Disable.6.The write timing parameter (t WTR_S) is referenced from the first rising clock edge afterthe last write data shown at T11.Figure 189: WRITE (BC4) Fixed to READ (BC4) Fixed with 1t CK Preamble in Same Bank GroupCommand DQ CK_t CK_cDQS_t,DQS_cBank GroupAddress Address Notes: 1.BC = 4, WL = 9 (CWL = 9, AL = 0), C L = 11, READ preamble = 1t CK, WRITE preamble =1t CK.2.DI b = data-in from column b .3.DES commands are shown for ease of illustration; other commands may be valid atthese times.4.BC4 setting activated by MR0[1:0] = 10.5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,Write CRC = Disable.6.The write timing parameter (t WTR_L) is referenced from the first rising clock edge afterthe last write data shown at T11.WRITE Operation Followed by PRECHARGE OperationThe minimum external WRITE command to PRECHARGE command spacing is equal to WL (AL + CWL) plus either 4t CK (BL8/BC4-OTF) or 2t CK (BC4-fixed) plus t WR. The min-imum ACT to PRE timing, t RAS, must be satisfied as well.Figure 190: WRITE (BL8/BC4-OTF) to PRECHARGE with 1t CK PreambleCommand DQCK_t CK_cDQS_t,DQS_c AddressDQ DQS_t,DQS_c Notes: 1.BL = 8 with BC4-OTF , WL = 9 (CWL = 9, AL = 0 ), Preamble = 1t CK, t WR = 12.2.DI n = data-in from column n .3.DES commands are shown for ease of illustration; other commands may be valid atthese times.4.BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0. BL8setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE commandat T0.5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.6.The write recovery time (t WR) is referenced from the first rising clock edge after the lastwrite data shown at T13. t WR specifies the last burst WRITE cycle until the PRECHARGEcommand can be issued to the same bank.Figure 191: WRITE (BC4-Fixed) to PRECHARGE with 1t CK PreambleCommand DQ CK_t CK_cDQS_t,DQS_cAddressNotes: 1.BC4 = fixed, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1t CK, t WR = 12.2.DI n = data-in from column n .3.DES commands are shown for ease of illustration; other commands may be valid at these times.4.BC4 setting activated by MR0[1:0] = 10.5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.6.The write recovery time (t WR) is referenced from the first rising clock edge after the last write data shown at T11. t WR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank.Figure 192: WRITE (BL8/BC4-OTF) to Auto PRECHARGE with 1t CK PreambleCommand DQ CK_t CK_cDQS_t,DQS_cAddressDQ DQS_t,DQS_c Notes: 1.BL = 8 with BC4-OTF , WL = 9 (CWL = 9, AL = 0 ), Preamble = 1t CK, t WR = 12.2.DI n = data-in from column n .3.DES commands are shown for ease of illustration; other commands may be valid at these times.4.BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0.BL8 setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE com-mand at T0.5.CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.8Gb: x4, x8, x16 DDR4 SDRAM WRITE Operation。
ATmega16单片机中文技术资料一、概述ATmega16是一款高性能、低功耗的8位微控制器,由Atmel公司推出。
它基于AVR增强型RISC结构,拥有丰富的外设资源和灵活的编程特性,广泛应用于工业控制、消费电子、通信设备等领域。
二、主要特性1. 内核:AVR增强型RISC结构,最高工作频率为16MHz。
2. 存储:16KB的程序存储器(Flash)、512B的EEPROM和1KB 的SRAM。
3. 外设接口:32个通用I/O口、8个通道的10位ADC、2个8位定时器/计数器、1个16位定时器/计数器、1个串行通信接口(USART)、1个串行外设接口(SPI)和1个两线接口(TWI)。
4. 工作电压:2.7V至5.5V,支持低功耗模式。
5. 封装:采用TQFP和PDIP封装,便于嵌入式系统设计。
三、引脚功能1. VCC:电源正极,接2.7V至5.5V电压。
2. GND:电源负极,接地。
3. PA0PA7:端口A,具有通用I/O、模拟输入和外围设备功能。
4. PB0PB7:端口B,具有通用I/O、JTAG接口和外围设备功能。
5. PC0PC7:端口C,具有通用I/O、模拟输入和外围设备功能。
6. PD0PD7:端口D,具有通用I/O和外围设备功能。
7. XTAL1/XTAL2:晶振输入/输出,用于外部晶振或陶瓷谐振器。
8. AVCC:模拟电源,为ADC和模拟电路提供电源。
10.RESET:复位输入,低电平有效。
四、编程与开发1. 编程语言:支持C语言和汇编语言编程。
2. 开发工具:可使用Atmel Studio、AVR Studio等集成开发环境进行程序编写、编译和调试。
3. 烧录方式:通过ISP、JTAG、HVPP等接口进行程序烧录。
本文档旨在为您提供ATmega16单片机的中文技术资料,帮助您更好地了解这款微控制器,为您的项目开发提供支持。
后续内容将详细介绍ATmega16的外设功能、编程方法及应用实例。
SEBU6711-051999年5月操作说明和维护手册G3500发动机系列产品4WD1-Up(发动机)5JD1-Up(发动机)8LD1-Up(发动机)9TG1-Up(发动机)2TJ1-Up(发动机)7NJ1-Up(发动机)4EK1-Up(发动机)6JW1-Up(发动机)8PW1-Up(发动机)9AW1-Up(发动机)5ZZ1-Up(发动机)7SZ1-Up(发动机)8BZ1-Up(发动机)8JZ1-Up(发动机)重要的安全信息与产品运行、维护和修理相关的大多数事故都是由于忽视了基本的安全规则或者安全预防措施而引起的。
如果我们在事故发生之前就能够认识到潜在的危险情况,那么这些事故都是可以避免的。
因此,我们必须对产品潜在的危害提高警惕。
同时,操作人员和修理维护人员还必须参加相关的专业培训、具备一定的操作技能和拥有必要的操作工具。
对本产品的不正确的操作、加油、维护或者修理是非常危险的,可能会引起人身伤害甚至死亡。
除非您已经仔细阅读并理解了相关内容,请勿自行进行本产品的操作、加油、维护或者修理。
本手册中提供了有关本产品的安全预防措施和安全警报。
如果忽视了这些安全警报,将可能引起人身伤害或者死亡。
这些危险性的标志通常以一个“安全警报符号”和随后的“标志性语句”例如“危险”、“警报”或者“警告”来加以识别。
“警报”的安全报警标签如下所示:其具体含义如下:请注意提高警惕!请注意安全!将警报标签的具体内容可以以文字或者图片的形式显示。
可能引起产品损坏的操作已经用“注意”标签加以识别。
CATERPILLAR当然无法预见所有的可能带有潜在危险的具体情形。
因此,本公告中和产品本身所显示的警报并不能包含所有的潜在危险。
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ATMEGA16A中文资料高性能,低功耗AVR 8-bit微控制器•高级RISC建筑– 131条指令–绝大多数为单时钟周期执行– 32 x 8通用工作寄存器–全静态工作–高达16吞吐量在MIPS 16 MHz–片2-cycle乘数高耐久性非易失性内存段– 16K字节的程序存储器,在系统内可编程Flash– 512字节的EEPROM– 1K字节内部SRAM–写/擦除周期:10,000闪光/ 100,000的EEPROM–数据保存:在20年85°C/100年在25°C(1)–可选引导具有独立锁定Bits代码段•在系统编程的片上引导程序•真Read-While-Write操作–锁编程软件安全JTAG (IEEE std. 1149.1兼容)接口–边界扫描功能根据JTAG标准–广泛的片上调试支持–编程闪存,EEPROM,熔丝位和锁定Bits通过JTAG接口外设特点–两个8-bit定时器/计数器具有独立预分频器和比较模式–一个16-bit定时器/计数器具有独立预分频器,比较功能和捕捉模式–实时计数器具有独立振荡器–四PWM频道– 8-channel, 10-bit ADC• 8单端通道• 7在TQFP 包装差分通道只有• 2在1x, 10x,差分通道具有可编程增益或200x–面向字节的两线串行接口可编程串行USART的––主/从串行接口SPI–可编程看门狗定时器具有独立片内振荡器–片内模拟比较器单片机的特殊功能–上电复位和可编程的掉电检测–内部振荡器校准RC–外部和内部中断源– 6种睡眠模式:空闲,ADC降噪,省电,省电,待机和扩展待机I / O和封装– 32可编程I / O线– 40-pin PDIP, 44-lead TQFP,和44-pad QFN/MLF 工作电压– 2.7为- 5.5V ATmega16A速度等级– 0 -为16 MHz ATmega16A功耗@ 1 MHz, 3V,和25°C为ATmega16A–活动:0.6 mA–空闲模式:0.2 mA–掉电模式:< 1µA1.引脚配置图1-1.接脚分布 ATmega16A2.概述该ATmega16A是一种低功耗微控制器CMOS 8-bit关于加强AVR基础的RISC 架构.通过执行在一个时钟周期,ATmega16A强大的指令实现吞吐量接近每1 MIPS MHz允许系统设计师能够优化功耗与处理速度.2.1 框图该AVR内核具有丰富的指令与32一般工作寄存器的设置.所有32寄存器都直接连接到算术逻辑单元(ALU),允许两个独立寄存器进行访问的,单一的在一个时钟周期执行的指令.由此产生的建筑是提高了代码效率,同时实现吞吐量达快十倍con-ventional CISC微控制器.该ATmega16A提供了以下功能:16K字节的系统内可编程Flash程序存储器Read-While-Write能力,512字节EEPROM,1K字节SRAM, 32 通用I / O线,32通用工作寄存器,用于边界JTAG接口扫描,片上调试支持和编程,三个灵活定时器/计数器与com-削减模式,内部和外部中断,串行可编程的USART,一个字节为导向两线串行接口,一个8-channel, 10-bit ADC可选差分输入级与可编程增益(TQFP 包装只),一个可编程看门狗定时器内部振荡器的振荡器,一个SPI串行端口,以及六个软件设置省电模式.空闲模式停止在CPU同时允许的USART,两线接口,A / D转换器,SRAM,定时器/计数器,SPI口,外中断系统继续工作.掉电模式,保存寄存器内容,但冻结振荡器,禁用,直到下一个外部间的所有其他芯片功能,rupt或硬件复位.在省电模式下,异步定时器继续运行,允许用户保持一个时间基准,而其余的设备正在睡觉.该ADC降噪模式停止CPU和所有的I /除了异步定时器和O模块ADC,以最大限度地降低开关噪声在ADC转换.在待机模式下,crystal/reso- nator振荡器运行,而在器件其它部分在睡觉.这允许非常快速启动结合低功耗.在扩展待机模式下,主振荡器和异步定时器继续运行.该设备是采用Atmel的高密度非易失性内存技术.在上闪存芯片ISP允许程序存储器进行重新编程,通过SPI串行在系统接口,由传统的非易失性存储器编程,或者通过片内引导程序运行在AVR核心.引导程序可以使用任何下载的应用程序接口在应用程序闪存方案.在Boot区软件将继续运行而应用Flash区更新,提供真正的Read-While-Write操作.通过结合一8-bit RISC CPU与系统内可编程闪存集成在一个芯片,Atmel的ATmega16A是一个功能强大的单片机,它提供了高度灵活和成本有效解决了许多嵌入式控制应用.该ATmega16A AVR是支持了若干方案和系统开发工具套件包括:C编译器,宏汇编,程序调试器/模拟器,在线仿真器,和评价kits.2.22.2.1引脚说明VCC数字供电电压.2.2.2GND地面.2.2.3端口A (PA7:PA0)作为一个港口的A / D转换器的模拟输入.端口A也可作为8-bit双向I / O端口,如果A / D转换器不使用.港口pins 可提供内部上拉电阻(每个位选中). PA口输出缓冲器具有sym-既吸收大电流驱动器和源能力韵律特征.当pins PA0到PA7作为投入使用的和被外部拉低,将输出电流,如果他们的内部上拉电阻器被激活.港口是一个pins三态时,复位过程中,即使系统时钟没有运行.港口B (PB7:PB0)港口B是8-bit双向I /内部上拉电阻(每个位选中)O端口.该港口B输出缓冲器具有高汇和源对称的驱动特性能力.作为输入,端口B pins被外部拉低时将输出电流若拉电阻器被激活.港口B pins为三态时,复位过程中,即使系统时钟没有运行.港口B也可以用不同的特殊功能的ATmega16A作为上市职能页面57.2.2.5港口C (PC7:PC0)港口C是8-bit双向I /内部上拉电阻(每个位选中)O端口.该港口C输出缓冲器具有高汇和源对称的驱动特性能力.作为输入,端口C pins被外部拉低时将输出电流若拉电阻器被激活.港口C pins为三态时,复位过程中,即使系统时钟没有运行.如果JTAG接口使能,上拉电阻器pins PC5(TDI), PC3(TMS)和PC2(TCK)将被激活,即使发生复位.港口C还担任了JTAG接口功能和其他的特殊功能ATmega16A作为上市页面60.2.2.6港口D (PD7:PD0)港口D是8-bit双向I /内部上拉电阻(每个位选中)O端口.该港口D输出缓冲器具有高汇和源对称的驱动特性能力.作为输入,端口D pins被外部拉低时将输出电流若拉电阻器被激活.港口D pins为三态时,复位过程中,即使系统时钟没有运行.港口D也可以用不同的特殊功能的ATmega16A作为上市职能页面622.2.7复位复位输入.此管脚上出现了比最小脉冲长度较长的低级别将产生复位,即使系统时钟没有运行.最小脉冲宽度是由于在表27-2页296.更短的脉冲则不能保证可靠复位.2.2.8XTAL1输入到反相振荡放大器和输入到内部时钟工作电路.2.2.9XTAL2振荡器的输出反相放大器.AVCCAVCC是端口A和A / D转换的电源.它应该从外部con- 连接到VCC,即使ADC不使用.如果ADC使用,它应该连接到VCC通过一个低通滤波器.2.2.11AREFAREF是为A / D转换器的模拟参考引脚.3.资源一个开发工具,应用手册和说明书一整套可供下载/avr.注意:1.4.数据保留可靠性鉴定结果表明,该预测数据保留故障率要少得多比1 PPM对在20或85°C年100年在25°C5. 寄存器摘要注释:1.当OCDEN保险丝未编程,OSCCAL的寄存器总是访问该地址.请参阅调试ger具体文件的详细信息如何使用OCDR 寄存器.2.请参考详细的USART如何访问UBRRH与UCSRC寄存器的描述.3.对于未来的产品兼容,保留bits应写入零,如果访问.保留的I / O内存地址不应该被写入.4.状态标志清零记录一些人对他们的逻辑.请注意,CBI和SBI指示将操作所有在我bits / O的寄存器,记录一旗一回任何内容设置,从而扫清了国旗.指令的CBI和SBI 与寄存器$00工作$1F只.6.指令集汇总8.包装信息44A40P644M19.勘误表本节中的版本号是指该ATmega16A器件版本.9.1ATmega16A牧师. N的转速. Q••••第一个模拟比较器的转换可能会推迟中断可能会丢失记录在异步定时器定时器寄存器IDCODE的面具输入数据TDI读数使用ST或STS设置EERE位EEPROM触发意外的中断请求1.第一个模拟比较器的转换可能会推迟如果该设备是由一个缓慢上升VCC,第一个模拟比较器转换将需要更长的时间比预期的一些设备.问题的修复程序/解决方法当器件上电或复位,禁用然后启用theAnalog比较在第一次转换.2.中断可能会丢失记录在异步定时器定时器寄存器中断将被丢失,如果是一个计时器寄存器定时器时钟同步时写入异步定时器/计数器寄存器(TCNTx)是0x00.问题的修复程序/解决方法务必检查异步定时器/计数器寄存器也没有,也不值0xFF前记录 0x00到异步定时器控制寄存器(TCCRx),异步定时器计数器寄存器(TCNTx),或异步输出比较寄存器 (OCRx).3. IDCODE的面具输入数据TDI该JTAG指令IDCODE的是不能正常工作.数据到成功的设备在更新取代由all-ones - DR的.解决方法问题的修正/––如果ATmega16A是唯一的设备在扫描链,问题是不可见的.选择通过发出IDCODE指令的ID设备ATmega16A 寄存器或通过输入TAP控制器Test-Logic-Reset读出状态它的设备ID 寄存器和可能的数据内容从设备的成功扫描链.发出指示,而旁路读数的ATmega16A设备ID的边界扫描链上的设备寄存器.如果在边界所有设备的设备IDs扫描链必须被捕获同时,ATmega16A必须拳头链中的设备.–4. 读数 EEPROM的使用ST或STS设置EERE位触发意外的中断请求.读数 EEPROM的使用ST或STS命令设置在EERE EECR reg-位ister触发一个意想不到的EEPROM的中断请求.解决方法问题的修正/始终使用OUT或SBI要在EERE EECR10.修订历史数据表请注意,本节所指页码提及这个文件.该本节中提到的修订是指对文件的修改.致8154B – 07/091.2.更新“勘误表”第343.更新了与 Atmel的新地址的最后一页.致8154A – 06/081.初始的版本(在ATmega16 / L的基于数据表的修订2466R-AVR-05/08)变化做comparted ATmega16 / L的数据表修改2466R-AVR-05/08: -更新的说明“堆栈指针”页上12.-所有的电气特性会移至“电气特性”页上293.- 寄存器描述转移到分节在每章末尾.-新增“速度等级”第295.-在新图“典型特征”页上305.-新“订购信息”13.。
TOSHIBA Bipolar Linear Integrated Circuit Silicon MonolithicTAR5S15~TAR5S50Point Regulators (Low-Dropout Regulator)The TAR5Sxx Series is comprised of general-purpose bipolar single-power-supply devices incorporating a control pin which can be used to turn them ON/OFF.Overtemperature and overcurrent protection circuits are built in to the devices’ output circuit.Features• Low stand-by current•Overtemperature/overcurrent protection • Operation voltage range is wide. • Maximum output current is high.• Difference between input voltage and output voltage is low. • Small package.• Ceramic capacitors can be used.Pin Assignments (top view)Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating ratings below the absolute maximum ratings.Do not use devices under conditions in which their absolute maximum ratings will be exceeded.Weight: 0.014 g (typ.)1 32 V IN NOISE4GND V OUT CONTROL 5List of Products Number and MarkingMarking on the ProductProducts No.MarkingProducts No.MarkingTAR5S15 1V5 TAR5S33 3V3 TAR5S16 1V6 TAR5S34 3V4 TAR5S17 1V7 TAR5S35 3V5 TAR5S18 1V8 TAR5S36 3V6 TAR5S19 1V9 TAR5S37 3V7 TAR5S20 2V0 TAR5S38 3V8 TAR5S21 2V1 TAR5S39 3V9 TAR5S22 2V2 TAR5S40 4V0 TAR5S23 2V3 TAR5S41 4V1 TAR5S24 2V4 TAR5S42 4V2 TAR5S25 2V5 TAR5S43 4V3 TAR5S26 2V6 TAR5S44 4V4 TAR5S27 2V7 TAR5S45 4V5 TAR5S28 2V8 TAR5S46 4V6 TAR5S29 2V9 TAR5S47 4V7 TAR5S30 3V0 TAR5S48 4V8 TAR5S31 3V1 TAR5S49 4V9 TAR5S32 3V2 TAR5S50 5V0Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitSupply voltage V IN 15 V Output current I OUT 200 mA 200 (Note 1)Power dissipationP D 380 (Note 2)mWOperation temperature range T opr −40 to 85 °C Storage temperature rangeT stg−55 to 150°CNote:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Note 1: Unit RatintgNote 2: Mounted on a glass epoxy circuit board of 30 × 30 mm. Pad dimension of 50 mm 23 V 0Example: TAR5S30 (3.0 V output)TAR5S15~TAR5S22Electrical Characteristic (unless otherwise specified, V IN= V OUT+ 1 V, I OUT= 50 mA,C IN= 1 μF, C OUT= 10 μF, C NOISE= 0.01 μF, T j= 25°C)Characteristics SymbolTestConditionMinTyp.Max Unit Output voltage V OUT Please refer to the Output Voltage Accuracy table.Line regulation Reg・line V OUT+ 1 V < = VIN< = 15 V,I OUT= 1 mA⎯ 3 15 mV Load regulation Reg・load 1mA< = I OUT< = 150 mA ⎯ 25 75 mVI B1 I OUT= 0 mA ⎯ 170 ⎯Quiescent currentI B2I OUT= 50 mA ⎯ 550 850μA Stand-by current I B (OFF)V CT= 0 V ⎯⎯ 0.1 μAOutput noise voltage V NO V IN= V OUT+ 1 V, I OUT= 10 mA,10 Hz< = f< = 100 kHz,C NOISE= 0.01 μF, Ta = 25°C⎯ 30 ⎯μV rmsTemperature coefficient T CVO−40°C< = T opr< = 85°C ⎯ 100 ⎯ ppm/°C Input voltage V IN⎯ 2.4⎯ 15 VRipple rejection R.R. V IN= V OUT+ 1 V, I OUT= 10 mA,C NOISE= 0.01 μF, f = 1 kHz,V Ripple= 500 mV p-p, Ta = 25°C⎯ 70 ⎯ dBControl voltage (ON) V CT (ON)⎯ 1.5⎯V IN V Control voltage (OFF) V CT (OFF)⎯⎯⎯ 0.4 VControl current (ON) I CT (ON)V CT= 1.5 V ⎯ 3 10 μAControl current (OFF) I CT (OFF)V CT= 0 V ⎯ 0 0.1 μATAR5S23~TAR5S50Electrical Characteristic (unless otherwise specified, V IN= V OUT+ 1 V, I OUT= 50 mA,C IN= 1 μF, C OUT= 10 μF, C NOISE= 0.01 μF, T j= 25°C)Characteristics SymbolTestConditionMinTyp.Max Unit Output voltage V OUT Please refer to the Output Voltage Accuracy table.Line regulation Reg・line V OUT+ 1 V < = VIN< = 15 V,I OUT= 1 mA⎯ 3 15 mV Load regulation Reg・load 1mA< = I OUT< = 150 mA ⎯ 25 75 mVI B1 I OUT= 0 mA ⎯ 170 ⎯Quiescent currentI B2I OUT= 50 mA ⎯ 550 850μA Stand-by current I B (OFF)V CT= 0 V ⎯⎯ 0.1 μAOutput noise voltage V NO V IN= V OUT+ 1 V, I OUT= 10 mA,10 Hz< = f< = 100 kHz,C NOISE= 0.01 μF, Ta = 25°C⎯ 30 ⎯μV rmsDropout volatge V IN− V OUT I OUT= 50 mA ⎯ 130 200mV Temperature coefficient T CVO−40°C< = T opr< = 85°C ⎯ 100 ⎯ ppm/°CInput voltage V IN⎯V OUT+ 0.2 V ⎯ 15 VRipple rejection R.R. V IN= V OUT+ 1 V, I OUT= 10 mA,C NOISE= 0.01 μF, f = 1 kHz,V Ripple= 500 mV p-p, Ta = 25°C⎯ 70 ⎯ dBControl voltage (ON) V CT (ON)⎯ 1.5⎯V IN V Control voltage (OFF) V CT (OFF)⎯⎯⎯ 0.4 V Control current (ON) I CT (ON)V CT= 1.5 V ⎯ 3 10 μA Control current (OFF) I CT (OFF)V CT= 0 V ⎯ 0 0.1 μAOutput Voltage Accuracy(V IN = V OUT + 1 V, I OUT = 50 mA, C IN = 1 μF, C OUT = 10 μF, C NOISE = 0.01 μF, T j = 25°C)Product No.SymbolMinTyp.MaxUnitTAR5S15 1.44 1.5 1.56 TAR5S16 1.54 1.6 1.66 TAR5S17 1.64 1.7 1.76 TAR5S18 1.74 1.8 1.86 TAR5S19 1.84 1.9 1.96 TAR5S20 1.94 2.0 2.06 TAR5S21 2.04 2.1 2.16 TAR5S22 2.14 2.2 2.26 TAR5S23 2.24 2.3 2.36 TAR5S24 2.34 2.4 2.46 TAR5S25 2.43 2.5 2.57 TAR5S26 2.53 2.6 2.67 TAR5S27 2.63 2.7 2.77 TAR5S28 2.73 2.8 2.87 TAR5S29 2.83 2.9 2.97 TAR5S30 2.92 3.0 3.08 TAR5S31 3.02 3.1 3.18 TAR5S32 3.12 3.2 3.28TAR5S33 3.21 3.3 3.39 TAR5S34 3.31 3.4 3.49 TAR5S35 3.41 3.5 3.59 TAR5S36 3.51 3.6 3.69 TAR5S37 3.6 3.7 3.8 TAR5S38 3.7 3.8 3.9 TAR5S39 3.8 3.9 4.0 TAR5S40 3.9 4.0 4.1 TAR5S41 3.99 4.1 4.21 TAR5S42 4.09 4.2 4.31 TAR5S43 4.19 4.3 4.41 TAR5S44 4.29 4.4 4.51 TAR5S45 4.38 4.5 4.62 TAR5S46 4.48 4.6 4.72 TAR5S47 4.58 4.7 4.82 TAR5S48 4.68 4.8 4.92 TAR5S49 4.77 4.9 5.03 TAR5S50V OUT 4.87 5.0 5.13VApplication Note1. Recommended Application CircuitThe figure above shows the recommended configuration for using a point regulator. Insert a capacitor for stable input/output operation. If the control function is not to be used, Toshiba recommend that the control pin (pin 1) be connected to the V CC pin.2. Power DissipationThe power dissipation for board-mounted TAR5Sxx Series devices (rated at 380 mW) is measured using a board whose size and pattern are as shown below. When incorporating a device belonging to this series into your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input voltage, output current and ambient temperature. Toshiba recommend that these devices should typically be derated to 70%~80% of their absolute maximum power dissipation value.Thermal Resistance Evaluation BoardCircuit board material: glass epoxy, Circuit board dimension:30 mm × 30 mm, Copper foil pad area: 50 mm 2(t = 0.8 mm)NOISEGND CONTROLControl LevelOperationHIGH ONLOW OFF3. Ripple RejectionThe devices of the TAR5Sxx Series feature a circuit with an excellent ripple rejection characteristic. Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops, the circuit is ideal for use in the RF blocks incorporated in all mobile telephones.4. NOISE PinTAR5Sxx Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitorbetween the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of 0.0047 μF or more between the NOISE pin and GND.The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE pin.Ripple Rejection − fTAR5S28 Input Transient ResponseFrequency f (Hz)Time t (ms)R i p p l e r e j e c t i o n (d B )C NOISE − V NTurn On WaveformNOISE capacitance C NOISE (F)Time t (ms)Co n t r o l v o l t a g e V C T (O N ) (V )O u t p u t n o i s e v o l t a g e V N (μV )μO u t p u t v o l t a g e V O U T (V )1458 10236 7 95. Example of Characteristics when Ceramic Capacitor is UsedShown below is the stable operation area, where the output voltage does not oscillate, evaluated using a Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current determines this area. TAR5Sxx Series devices operate stably even when a ceramic capacitor is used as the output capacitor.If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple rejection differs from that when a tantalum capacitor is used. This is shown below.Toshiba recommend that users check that devices operate stably under the intended conditions of use.Examples of safe operating area characteristicsEvaluation Circuit for Stable Operating AreaRipple Rejection Characteristic (f = 10 kHz~300 kHz)(TAR5S15) Stable Operating AreaOutput current I OUT (mA)(TAR5S50) Stable OperatingArea(TAR5S28) Stable Operating AreaOutput current I OUT (mA)Output current I OUT (mA)E q u i v a l e n t s e r i e s r e s i s t a n c e E S R (Ω)E q u i v a l e n t s e ri e s r e s i s t a n c e E S R (Ω)E q u i v a l e n t s e r i e s r e s i s t a n c e E S R (Ω)R i p p l e r e j e c t i o n (d B )(TAR5S30) Ripple Rejection – fFrequency f (Hz)V IN = V +F OUTCapacitors used for evaluationMade by Murata C IN : GRM40B105KC OUT : GRM40B105K/GRM40B106KO u t p u t v o l t a g e V O U T (V )Ou t p u t v o l t a g eV O U T (V )Output current I OUT (mA)(TAR5S15) I OUT – V OUTOu t p u t v o l t a g eV O U T (V )Output current I OUT (mA)(TAR5S18) I OUT – V OUTOu t p u t v o l t a ge V O U T (V )Output current I OUT (mA)(TAR5S20) I OUT – V OUTOu t p u t v o l t ag e V O U T(V )Output current I OUT(mA)(TAR5S21) I OUT – V OUTOutput currentI OUT (mA)(TAR5S22) I OUT – V OUTOutput current I OUT (mA)(TAR5S23) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S27) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S30)I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output currentI OUT (mA)(TAR5S25) I OUT – V OUTOu t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S31) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S28) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S29) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S32)I OUT – V OUTOu t p u t v o l t ag e V O U T (V )Output current I OUT (mA)(TAR5S33)I OUT – V OUTO u t p u t v o l t a g e V O U T (V )50 100 150Output current I OUT (mA)(TAR5S45) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )0 50 100 150Output current I OUT (mA)(TAR5S50) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )Output current I OUT (mA)(TAR5S35) I OUT – V OUTO u t p u t v o l t a g e V O U T (V )0 50 100 150Output current I OUT (mA)(TAR5S48) I OUT – V OUTO u t p u t v o l t a g e 圧 V O U T (V )0 50 100 150B i a s c u r r e n t I B (m A )B i a s c u r r e nt I B (m A )Input voltage V IN (V)(TAR5S15)I B – VINB i a s c u r r e nt I B (m A )Input voltage V IN (V)(TAR5S18)I B – VINB i a s c u r re n t I B (m A )Input voltage V IN (V)(TAR5S20)I B – VINB i a s c u r r en t I B(m A )Input voltage V IN (V)(TAR5S21)IB – V INInput voltageV IN (V)(TAR5S22)I B – V INInput voltage V IN (V)(TAR5S23)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S27)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S30)I B – V INB i a s c u r r e n t I B (m A )Input voltageV IN (V)(TAR5S25)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S31)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S28)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S29)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S32)I B – V INB i a s c u r re n t I B (m A )Input voltage V IN (V)(TAR5S33)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S45)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S50) I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S35)I B – V INB i a s c u r r e n t I B (m A )Input voltage V IN (V)(TAR5S48) I B – V INB i a s c u r r e n t I B (m A )O u t p u t v o l t a g e V O U T (V )O ut p u t v o l t a g eV O U T (V )Input voltage V IN (V)(TAR5S15)V OUT – V INOut p u t v o l t a g eV O U T (V )Input voltage V IN (V)(TAR5S18)V OUT – V INOu t p u t v o l t a ge V O U T (V )Input voltage V IN (V)(TAR5S20)V OUT – V INOut p u t v o l t ag e V O U T(V )Input voltage V IN (V)(TAR5S21)VOUT – V INInput voltage VIN (V)(TAR5S22)V OUT – V INInput voltage V IN (V)(TAR5S23)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S27)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN(V)(TAR5S30)V OUT – V INO u tp u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S25)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN(V)(TAR5S31)V OUT – V INO u t p u t vo l t a g e V O U T (V )Input voltage V IN (V)(TAR5S28)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN (V)(TAR5S29)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S33)V OUT – V INO u t p u t v o l t a g e V O U T (V )0 5 10 15Input voltage V IN (V)(TAR5S32)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S45)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S50)V OUT – V INO u t p u t v o l t a g e V O U T (V )Input voltage V IN (V)(TAR5S48)V OUT – V INO u t p u tv ol t a g e V O U T (V )0 5 10 156Input voltage V IN (V)(TAR5S35)V OUT – V INO u t p ut v o l t a g e V O U T (V )O u t p u t v o l t a g e V O U T (V )O ut p u t v ol t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S15)V OUT – TaOu t p u t v ol t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S18)V OUT – TaOu t p u tv o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S20)V OUT – TaO ut p u tv o l t a g eVO U T (V )Ambient temperature Ta (°C)(TAR5S21)V OUT – TaAmbient temperature Ta (°C)(TAR5S22)V OUT – TaAmbient temperature Ta (°C)(TAR5S23)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S25)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S27)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S30)V OUT – TaO u t p u t v o l t a g eV O U T(V )Ambient temperature Ta (°C)(TAR5S31)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S28)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 2510075 50Ambient temperature Ta (°C)(TAR5S29)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50Ambient temperature Ta (°C)(TAR5S32)V OUT – TaO ut p u tv o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S33)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 2575 50100Ambient temperature Ta (°C)(TAR5S45)V OUT – TaO u t p u t v o l t a g eV O UT (V )Ambienttemperature Ta (°C)(TAR5S50)V OUT – TaO u t p u t v o l t a g e VO UT (V )Ambienttemperature Ta (°C)(TAR5S35)V OUT – TaO u t p u t v o l t a g e V O U T (V )Ambient temperature Ta (°C)(TAR5S48)V OUT – TaO u t p u t v o l t a g e V O U T (V )−50−25 0 25 10075 50−50−25 0 25 10075 50Ambient temperature Ta (°C)I B – TaBiascurrentIB(mA)Ambient temperature Ta (°C)(TAR5S23~TAR5S50) V IN - V OUT – TaDropoutvoltageVIN-VOUT(V)Output current IOUT(mA)(TAR5S23~TAR5S50) V IN - V OUT – I OUTDropoutvoltageVIN-VOUT(V)Output current I OUT(mA)I B – I OUTBiascurrentIB(mA)Time t (ms)Turn On WaveformOutputvoltageVOUT(V)Time t (ms)Turn Off WaveformOutputvoltageVOUT(V)231123ControlvoltageVCT(ON)(V)ControlvoltageVCT(ON)(V)Ambient temperature Ta (°C)P D – TaP o w e r d i s s i p a t i o n P D (m W )−400 4012080Frequency f (Hz)V N – fO u t p u t n o i s e v o l t a g e V N (μV / H z )10100 1 k 10 k 100 kFrequency f (Hz)Ripple Rejection – fR i p p l e r e j e c t i o n (d B )10 100 1 k 10 k100 k 1000 kPackage DimensionsWeight: 0.014 g (typ.)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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