PE44039资料

1

Semiconductor GroupSPD28N03L

SIPMOS® Power Transistor

Product SummaryDrain source voltage30VDSV

Drain-Source on-state resistanceΩ0.018RDS(on)IDContinuous drain current30AFeatures

• N channel

• Enhancement mode

• Avalanche rated

• Logic Level

• dv/dt rated

• 175°C operating temperature

Pin 1Pin 2Pin 3GDSPackagingTypePackageOrdering CodeSPD28N03LTape and ReelP-TO252Q67040-S4139-A2SPU28N03LTubeQ67040-S4142-A2P-TO251-3-1Maximum Ratings, at Tj = 25 °C, unless otherwise specified

ParameterSymbolUnitValue

Continuous drain current

TC = 25 °C, 1)

TC = 100 °C

30

28IDA

Pulsed drain current

TC = 25 °CIDpulse112

Avalanche energy, single pulse

ID = 30 A, VDD = 25 V, RGS = 25 ΩmJEAS145

Avalanche energy, periodic limited by Tjmax7.5 EARReverse diode dv/dt

IS = 30 A, VDS = 24 V, di/dt = 200 A/µs,

Tjmax = 175 °Cdv/dt6kV/µs

Gate source voltageVGS±20V

产品名称:聚醚酰亚胺

产品型号: PEI

PEI塑胶原料

简单介绍概述：PEI(聚醚酰亚胺)具有优良的机械性能、电绝缘性能、耐辐照性能、耐高低温及耐磨性能，并可透过微波。PEI兼具优良的高温机械性能和耐磨性，故可用于制造输水管转向阀的阀件。由于具有很高的强度、柔韧性和耐热性，PEI是优良的涂层和成膜材料，能形成适用于电子工业的涂层和薄膜。主要特点 连续工作温度范围大（-200--170度长期工作），玻璃化温度与热变性温度接近、熔点高达330度 在低温/高温下仍保有高机械强度、高硬度、高抗蠕变性、良好韧性杰出的抗析出性 (适合用在利用蒸气消毒的杀菌室 )；不易滋生细菌，常用于食品加工业 高抗辐射性优异、可透过红外光和微波辐射；电器绝缘性好、良好的电镀性能 较宽温度（-200--170度）范围保持稳定的介电常数和损耗因数不能通过SMT回流焊接测试 主要应用 电子行业：连接件、普通和微型继电器外壳、电路板、线圈、软性电路、反射镜、高精度密光纤元件、高温隔热板 汽车行业：连接件、高功率车灯和指示灯、控制汽车舱室外部温度的传感器、控制空气和燃料混合物温度的传感器，医疗器材等。

PEI 塑胶原料

(1) 日本宝理/日本出光：1140A6、K531A1、6165A4

(2) 美国GE 1000-1000/7101,1010-1000/7001,ATX200,2100,220

产品介绍：1、PEI无定形,具有杰出的耐高温、高强度、高模量及广泛的耐化学剂性。

2、天性耐燃,且烟气排放量低。

3、高的介电常数和损耗因数

耐高温，高流动PEI

PEI塑胶原料 (聚醚酰亚胺)

1) 美国GE：1000；1000F；1000P；1000R；1010；1010F；1000R；1100；1100F；1100R；1110；1110F：8015；D9065；9075；

9076；ATX100；ATX100F；ATX100R；ATX200；ATX200F；ATX200R

PO Box 16759 Irvine, CA 92623-6759 Toll Free: (866) 726-8375

Direct: +1 (949) 261-1920

FAX: +1 (949) 261-7451

Sales: sales@

Tech Support: techsupport@ PE8001 thru PE8009

Biased Schottky

Diode Detectors

(1) Pasternack reserves the right to change specifications or information without notice.

(2) Tss is measured with a 2 MHz Video Bandwidth and 2 dB Noise Figure Amplifier.

1 of 2

Video

OutRF

In

Biased DetectorRloadRbias

(100µA, typ.)Power

Supply Product Features

• High Sensitivity

• Extremely Flat Response

• Low Video Output Resistance (350Ω, typical)

• Hermetically Sealed Modules

General Specifications (1)

Parameter Units Value Description

Impedance ohms 50Ω

Maximum Input Power mW 200 CW

Typical Bias Level µA 100 At 25º C and -20dBm input power

Operating Temperature C -55º to +125º

* 013.30.00424.211.122.244.4* 023.90.00423.310.220.440.9* 034.70.00422.39.318.637.2* 045.60.00521.38.517.034.1* 056.80.00520.47.715.530.9* 068.20.00619.57.014.128.2* 07100.00618.66.412.825.5* 08120.00717.85.811.623.3* 09150.00816.85.210.420.8* 10180.00816.14.89.519.0* 11220.00915.34.38.617.2* 12270.01014.63.97.815.5* 13330.01113.93.57.014.0* 14390.01213.33.26.512.9* 15470.01312.72.95.911.8* 16560.01512.22.75.410.8Rated I (amp.)I (amp.)I (amp.)Part No.Ind.DCRCurrent@ Lsat.@ Lsat.@ Lsat.CTP4409 - (uH)OhmsAmp. RMS10%25%50%Rated I (amp.)I (amp.)I (amp.)Part No.Ind.DCRCurrent@ Lsat.@ Lsat.@ Lsat.CTP4409 - (uH)OhmsAmp. RMS10%25%50%* 17680.01611.62.44.99.8* 18820.0229.92.24.58.9* 191000.0249.42.04.08.1* 201200.0348.01.83.77.4* 211500.0476.71.63.36.6* 221800.0655.71.53.06.0* 232200.0725.51.42.75.4* 242700.1024.61.22.54.9* 253300.1413.91.12.24.4* 263900.1933.31.02.04.1* 274700.2682.80.91.93.7* 285600.2922.70.91.7