CA3162_02中文资料

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© 大众汽车公司在使用标准之前要检查是否为最新版本来源：N O L I S 部门格式F E 41-12.00第二页TL 522 31：2002-123.2 生产制造采用注塑方法。

3.3 材料类型-TL522 31，无指标的类型为ABS/PC聚合材料，标准型，其耐热变形的温度最高为100°C。

-TL522 31， A型为ABS/PC聚合材料，其耐热变形的温度更高，能达到110°C。

-TL522 31， B型为ABS/PC聚合材料，其耐热变形的温度更高，能达到120°C。

3.4 特性符合VDA 260标准所有种类：ABS+PC聚合材料3.5 试验前的正常化处理每项试验所需的试样在检验之前至少要在DIN50 014-23/50-2标准规定的正常气候条件下放置48小时。

3.6 要求的适用性所要求的这些数值适用于每一项的单独测定检验。

3.7 材质请参见第5.1章节所有种类：聚碳酸酯-丁二烯-丙烯腈-苯乙烯-聚合材料。

3.8 颜色按照图纸要求来确定颜色。

第三页2002-12TL 522 31：请见表1表 1第四页TL 522 31：2002-125. 检验说明5.1 材质用红外光谱学的方法进行一致性检测。

5.2 布式硬度至少需要用三个尺寸为(20×20)mm的大试样进行测量（每个试样测量两次）。

如果试样是用一面有坑洼缺陷的成品件加工制成的，则需要用平面打磨机将凹凸不平的面磨平。

将这一平面作为放置面放置试样，然后在未做加工的另一面上进行测量，测量时间为10秒。

5.3 抗弯强度根据DIN EN ISO 178标准确定当加载力最大时弯曲应力是多大，试样长度为(50±1)毫米，宽度为： (6±0.2)毫米，厚度与产品厚度一致（最厚为4毫米），跨距为：40毫米，支撑架半径：1.0至1.2毫米；检验速度： (14±1)毫米/分钟。

SIPMOS®Tape and Reel Information Marking Lead free PackingBSR316PParameter Symbol Conditions Unitmin.typ.max. Thermal characteristicsThermal resistance, junction - ambient R thJAminimal footprint,steady state--250K/WElectrical characteristics, at T j=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltage V(BR)DSS V GS=0 V, I D=-250 µA---100V Gate threshold voltage V GS(th)V DS=V GS, I D=-170 µA-2-1.5-1Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V,T j=25 °C--0.1-1µAV DS=-100 V, V GS=0 V,T j=150 °C--10-100Gate-source leakage current I GSS V GS=-20 V, V DS=0 V--10-100nADrain-source on-state resistance R DS(on)V GS=-4.5 V,I D=-0.33 A- 1.8 2.2ΩV GS=-10 V,I D=-0.36 A- 1.3 1.8Transconductance g fs |V DS|>2|I D|R DS(on)max,I D=-0.29 A0.30.5-SValuesBSR316PParameterSymbol ConditionsUnitmin.typ.max.Dynamic characteristics Input capacitance C iss -124165pFOutput capacitanceC oss -2533Reverse transfer capacitance C rss -1320Turn-on delay time t d(on)-58ns Rise timet r -69Turn-off delay time t d(off)-71106Fall timet f-2639Gate Charge Characteristics 2)Gate to source charge Q gs -0.30.4nCGate to drain charge Q gd - 1.6 2.4Gate charge total Q g - 5.37.0Gate plateau voltage V plateau--2.7-V Reverse DiodeDiode continuous forward current I S ---0.36ADiode pulse current I S,pulse ---1.44Diode forward voltage V SD V GS =0 V, I F =0.36 A, T j =25 °C--0.8-1.1V Reverse recovery time t rr -40.6-ns Reverse recovery chargeQ rr-46.4-nC 2)See figure 16 for gate charge parameter definitionT C =25 °CValues V GS =0 V, V DS =-25 V, f =1 MHzV DD =-50 V, V GS =-10 V,I D =-0.36 A, R G =6 ΩV DD =-80 V,I D =-0.36 A, V GS =0 to -10 VV R =-50 V, I F =|I S |, d i F /d t =100 A/µs1 Power dissipation5 Typ. output characteristics9 Drain-source on-state resistance13 Avalanche characteristicsBSR316PPackage Outline: PG-SC-59PG-SC59Footprint:Packaging:BSR316PPublished byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2006.All Rights Reserved.Attention please!The information given in this data sheet shall in no event be regarded as a guarantee of conditions ocharacteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typicavalues stated herein and/or any information regarding the application of the device, Infineon Technologieshereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties onon-infringement of intellectual property rights of any third partyInformationFor further information on technology, delivery terms and conditions and prices please contact your nearesInfineon Technologies Office ().WarningsDue to technical requirements components may contain dangerous substances. For information on the typesin question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/ormaintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of theuser or other persons may be endangered.。

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2.0A门极驱动光耦HCPL316集成Vce去饱和检测（也即Ic过电流）和故障状态反馈IC特性：1.可驱动150A，1200V的IGBT管，SO-16封装2.光耦隔离，故障状态反馈输出3.CMOS/TTL兼容4.500ns开关速度，也即可承受2MHz开关频率5.软关断功能（在过电流故障时，能够软卸载驱动电压）好处？6.带故障安全保护功能，其一：Vce失饱和检测，其二电源低电压滞环锁定7.用户可配置：正相，反相，自动复位，自动关闭等8.宽Vcc供电范围15—30V；温度工作范围-40度到+100度IC封装及应用电路图，SO-16封装图1 封装及应用电路图IC内部结构原理图图2 IC内部结构原理图IC功能详细介绍各种工作状态分析（图2中J1称为输出高电平条件门，J2输出低电平条件门）（1）正常的开关工作状态：引脚1,2正常给定脉冲，工作电压Vcc2-VE大于12V，Vce未去饱和，也即电流不过限。

此状态下，输入侧光耦导通，内部光耦对管上为高电平（图2中LED的输出，三角形为反相器），故障线为低电平，欠压信号线为低电平，总体逻辑图见图3，图中0，1表示高低逻辑。

总之，图中可以看出，J1条件全满足，J2关断，三级达林顿管导通，输出管脚11，Vout电压接近Vc电压，实际使用电路中，Vc与Vcc2连接在一起（12-13相连），实际输出驱动信号使用Vout和VE，加到IGBT的G，E引脚上，当然，这个输出电压就是15V-30V（看Vcc2供应电压水平）。

正常的关断分析过程相似，信号线主要就是LED（驱动输入）信号线逻辑相反，最终是J1条件不满足，输出低，达林顿管关闭，J2满足条件，图中的50x DMOS管导通，Vout电平拉到VEE，这样驱动输出就是VEE，VE，外部配置时，会配置VEE相对VE脚为负压，这样就输出负压（看外加配置，一般会考虑-9v左右）加到IGBT的G，E引脚上，保证关断IGBT。

逻辑图就不再挂上，细心读者会发现，图中故障信号逻辑经过反相器就会点亮光耦，这点笔者还是弄不明白，只能认为官方提供的图可能是有问题，本文的分析应该是正确的。