毕业设计（论文）外文文献翻译文献、资料中文题目：一种新型的集成电路片上CMOS 温度传感器文献、资料英文题目：文献、资料来源：文献、资料发表（出版）日期：院（部）：专业：电子信息工程班级：姓名：学号：指导教师：翻译日期： 2017.02.14普通本科毕业设计（论文）外文翻译文献题目一种新型的集成电路片上CMOS 温度传感器A Novel Built- in CMOS Temperature Sen sor for VLSICircuitsWang Nailong, Zhang Sheng and Zhou Runde( Institu te of M icroelectronics, T sing hua U niversity , B eij ing 100084, Ch ina)Abstract: A novel temperature sensor is developed and presented especially for the purpose of online the rmalmoni to ring of VLSI chips. This sensor requires very small silicon area and low power consumption, and the simulation results show that its accuracy is in the o rder of 018℃. The proposed sensor can be easily implemented using regular CMOS process techno logies, and can be easily integrated to any VLS I circuits to increase their reliability.Key words: temperature sensor; thermal testability; frequency output. EEACC: 1265A; 2560; 2570DCLC number: TN 47Document code: A Article ID: 025324177 (2004) 03202522051IntroductionDue to the advances in the fabricaion process field of in tegrated circu its, the component den sityand the overall power dissipat ion of the high per fo rmance VLSI chips increase cont inuously. At the beginning of this century, the power dissipated in asingle ch ip has exceeded 100W , and tightly packed chip assemblies as themultichip modules can even dissipate thou sandswatts. Therefore, the thermalstate of integrated circu its has been always a great prob lem concerned and is considered as a bottle neck in increasing the in tegrat ion of elect ron ic system s.To overcome this problem , many researchers developed low 2power design techn iques for VLS Isystems. In order to avoid thermal damages,continuous thermal monitoring should be appliedduring both the production reliability testing and the field operation. An eff icient way is to buildtemperatu resensors in to all VLSI chips, with theapp ropriate circuitry p roviding easy readout. Insome earlier works , the researchers used theparasitic, lateral or sub strate bipolartran sistors,which can be realized in mo st of the CMOS processes, as thermal sen so rs. These are u sually PTAT sensors. The weakness of these senors is that the bipolar structu resare not well characterized in a MOS process. Thus, although they canp rovide a sat isf iect solution for a given process, thecircu its can not be regarded as a general CMOS approach and can not be widely used.2Problem formulationThere are various temperature sensors suitable for the rmalstate verification of in tegrated circuit microstructures such as the rmoresistors, pnjunctions, and the exploitation of the weakinversion of MOS transistors. Our objective is to convert the temperature to an oscillat ing signal to make it compat ib le to digital circu it design method and facilitate the evaluat ion of the temperature sensed. A temperatu re sen so r based on a ringo scillator is introduced in Ref., this cell guarantees a accuracy of 3℃that is marginally accep table as a chiptem perature sensor but the silicon area required is rather big. AMOS temperature controlled oscilla to risused as asensor to monitor the thermal state of microelectronic structu res in Ref. How ever, this sensor requires about 10 to 15mW power to drive the thermal delay line and the dissipatertran sistor.To overcome these inconven iences, w e th inkthat the temperature sensors to be used as builtinun its for VLSI circuits online the rmalmoni to ring should meet some special requirements as follows:( 1 ) Nearly linearity in a temperatu rerange(usually 0~ 100℃) ;( 2 ) Low power consumption (no more than 1 mW ) ;( 3 ) Simple structure and small silicon area(usually no more than 40 transistors) ; ( 4 ) Easy read out results with favorably digital output signal (e. g. , the frequency of asquare wave which carries the temperature information) ;( 5 ) Easy (one point) calib rat ion;( 6 ) High accu racy ( in the order of 2℃ or less) ;( 7 ) Compat ib ility w ith the p resen t CMO Sp rocess;Con sidering the given requ irements, we present a new builtin temperatu resensor meeting all the above requirements3 Built- in thermal mon itor ing sensorOur new temperature sensoris a voltage controlled relaxation o scillato rbasedtemperature sensor shown in Fig. 1. The circuit consists of two parts, a voltageout put sensor and a relaxation oscillator.F ig. 1 Temperature sensor designed based on avoltage2cont ro lled relaxation oscillator3.1Voltage-output sen sorOur voltage output sensor circuit exploits the temperature dependence of the mosimportant parameter of the MOS transistor, namely, the thresh old voltage (V T ). The thresh old voltage has a negative temperature coeff icient as:V T (T ) = V T (T 0) + a (T - T 0) (1)where a is the temperature coeff icient with atypical value of - 118mVöK in CMOS 0135Lm 5V technology; V T (T 0 ) is the value of the th reshold voltage attemperatu re T0.As shown in Fig. 1, the voltage output sensor is a th reshold voltage reference cell. The pchannelt ransistors P1, P2 constitu teacurrent mirror. The current of transist or N1 is mirrored to tansistors N 2,N 3, and N 4. The vo ltage drop on these t ran sistors isfed back to the gate of N 1. Fo r easy calculat ing,we choose asame size of the transistors N 2,N 3, and N 4 (BN 2= BN 3= BN 4) , and we choose approp riatesize of the other transistors to ensure that the transisto rs P1, P2, N 1, N 2, N 3, and N4 are all in the state of saturation. Then the out put voltages of th is sen so r are in direct proportion to the thresh old voltage and linear with temperature and their values are:V H = V T (1 +2K P12K P12 - 3K N 12) = k1V T (2)V L = V T (1 +2K N 12K P12 - 3K N 12) = k2V T (3)where is determined by the ratio between the gatesizes of the nchannel t ransistor N 1 and N 2, and is the ratio of the gate sizes of the pchannel transistor P1 and P2.By adju st ing the sizes of the t ran sisto rs, w efound shou ld be b igger than threetimes of,when the transistors P1, P2, N 1, N 2, N 3, and N 4 are all in the state of saturat ion.The advantages of th is circuit arrangeme t arethe simplicity and the stable outpu t. A n important feature is that the output voltages of V H and V L arepractically independen t of the supply voltage (V DD ).3. 2Voltage-con trolled relaxa t ion osc illa torThe quick in terfacing of the analogue, current output sensor with the digital environmen t is not asimple task. To overcome this problem we usea voltage controlled relaxat ion oscillato r as the voltage frequency converter. The output signal of th isconverter is asquare w ave, the frequency of which carries the temperatu re info rmation. This frequency can be easily turned in to adigital number bycoun tingthe square wave pulses in a prescribedt ime window.As shown in F ig. 1, the curren t of the resisto rism irro red using thet ran sisto rs P3, P4, P5,N5,N6 to provide the same sou rce and sink current s to charge and discharge thecapacitor C. Assum ing thein it ial value of the f o sc is logic 0, then the t ran sistor P6 is on and the t ran sisto rN 7 is off cau sing the capacitor C to be charged using the source curren t I un t il V cexceeds the upper th resho ld V H. W hen th isoccu rs, the output latchtoggles and the logic valueof f o sc becomes logic 1, w hich in turn makes thet ran sistor P6 off and the tran sistor N 7 on. Th ismakes the capacitor C to be discharged by the sinkcu rren t until the capacit r voltage falls below alowerthreshold V L at w h ich t ime the en t ire cyclerepeats. N eglecting the delay of the comparators,latch and transistors P6 and N 7, the oscillation cycle time should be:As the current is small and the W öL rat io of the transistor P3 is chosen to be big in this design,the V gsp can be appro ximated to the th reshold voltage of the transistor P1 and therefo e the currentcan be approximated byAnd the temperature dependence of the resistor R s iswhere k is the temperatu re coeficien t of the resistor,with typical value k= 255×10- 6ö℃fo r polysilicon sheet resistor in the CMOS 0135Lm 5V technology.Therefore, the oscillation cycle time is foundto beThis equation implies that the cycle t ime ofthe relaxation oscillator is nearly linear with temperature, and then the f requency of the o scillator is4Simulation results and discuss ionThe simulation result of the voltage output the rmalsen sorisillustrated in F ig. 2, and the varia ion of the relaxat ion oscillator based sensor oscillation cycle t ime and f requency versus the ch iptemperatu re is shown in Fig. 3.To evaluate a buildin thermal sensor, thereare three important characterist ics: accu racy, sili2con area ( transistor number ) , and powerdissipation. The characterist ics of our voltage cont rolled relaxation oscillator based sensor is shown in Table 1:5ConclusionIn this paper, apractical and efficient built intemperatu resensor for thermalmonito ring of the integrated circuits is in troduced. The main advantages of the presented chip temperature sensors are low silicon area, low power dissipation, digital output inform of oscillation frequency, high accuracy,and easily implemented using regular CMOS process techno logies. Therefore, this sensor can beeasily in tegrated to any VLS I circu it s to increasecircu it sreliab ility.References[ 1 ]Chandrakasan A , ShengS, Broderson R. Low 2power CMOS digital design. IEEE J So lid2State Circuits, 1992, 27 (4) : 473[ 2 ]NebelW , Mermet J. Low power design in deep subm icronelectronics. Boston: Kluwer A cadem ic Publishers, 1997,Chap ter 4. 1[ 3 ]Montane E,Bo ta S A , Sam itier J. A compact temperature sen2so r of a 110Lm CMOStechno logy using lateral PN P transis to rs. 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IEEE T rans VLSISyst, 1997, 5 (3) : 270[ 10 ]Huang Yip ing, Zhu Shiyang, LiAizhen, et al. High temperature pressuresensor fabricated with smartcut SO Imaterials.Chinese Journal of Sem iconductors, 2001, 22 (7) : 924 ( in Chinese)一种新型的集成电路片上CMOS 温度传感器摘要: 介绍了一种可以用于片上温度监控的CMO S 温度传感器, 该传感器具有面积小、功耗低、精度高、易于实现等优点, 可以比较容易地集成到芯片上实现温度监测功能.关键词: 温度传感器; 热可测性; 频率输出EEACC: 1265A; 2560; 2570D中图分类号: TN 47文献标识码: A文章编号: 025324177 (2004) 03202522051引言由于集成电路制造工艺领域的先进性，该组件密度和高表现所整体功耗超大规模集成电路芯片不断增加。
