PC4020 v3.0 中文说明书图文PC4020 v3.0 ? 安装说明DLS-2 v1.3警告：本说明包括产品使用、功能和关于制造商责任方面的内容。
应仔细完整阅读本说明。
警告请仔细阅读安装者请注意此警告包括重要的资料。
作为与系统用户联系的唯一个体，您有责任使系统用户了解此警告的每个项目。
系统故障此系统经过认真设计，尽可能达到有效。
会出现某些情况，包括火警、盗警或其他不能提供保护的紧急情况。
任何类型的任何报警系统会考虑妥协，或由于种种原因而不能如期望般操作。
这些原因可能是：安装不当为了能够提供适当的保护，安防系统必须正确安装。
每次安装都必须由安防专业人员进行评估，以确保能覆盖所有访问点的区域。
门和窗上的锁和闩都必须是安全的，而且能正常操作。
窗、门、墙、天花板和其他建筑材料必须有足够的强度，而且建筑能够达到期望的保护水平。
在进行建筑活动期间或建筑活动后必须进行评估。
如果此设备可用的话，建议由消防队和/或警察局进行评估。
犯罪提示此系统的安防性能是十分可靠的。
有犯罪意向的人可能会从事降低这些安防性能有效性的研究。
定期检查安防系统是很重要的，可以确保性能保持有效，如果发现系统不能提供有效的保护，必须进行更新或替换。
侵入者的访问侵入者可以避开传感设备，从覆盖不足、断开连接警告设备的区域移动，或干涉及妨碍系统的正常运作，通过为被保护的访问点进入。
电源故障控制设备、入侵探测器、烟感探测器和许多其他的安防设备都需要适当的电源供应，便于正确操作。
如果设备用电池操作，电池可能出现故障。
即使电池不出故障，也必须充电、情况要良好以及安装正确。
如果只使用交流电，假设电流断开，哪怕只是暂时的，也会使设备在断电期间不能正常运作。
不同时间长度的电源中断往往伴随着会导致破坏电力设备如安防系统的电压波动。
发生电源中断后，要立即进行一次完整的系统测试，确保系统运作正常。
可替换电池的故障本系统的无线传送器经过特别设计，在一般情况下，电池寿命可达几年。
TL F 5953CD4020BM BC 14-Stage Ripple Carry Binary Counters CD4040BM BC 12-Stage Ripple Carry Binary Counters CD4060BM BC 14-Stage Ripple Carry Binary CountersFebruary 1988CD4020BM CD4020BC14-Stage Ripple Carry Binary Counters CD4040BM CD4040BC12-Stage Ripple Carry Binary Counters CD4060BM CD4060BC14-Stage Ripple Carry Binary CountersGeneral DescriptionThe CD4020BM CD4020BC CD4060BM CD4060BC are 14-stage ripple carry binary counters and the CD4040BM CD4040BC is a 12-stage ripple carry binary counter The counters are advanced one count on the negative transition of each clock pulse The counters are reset to the zero state by a logical ‘‘1’’at the reset input independent of clockFeaturesY Wide supply voltage range 1 0V to 15V Y High noise immunity 0 45V DD (typ )YLow power TTL Fan out of 2driving 74Lcompatibilityor 1driving 74LSY Medium speed operation 8MHz typ at V DD e 10VYSchmitt trigger clock inputConnection DiagramsDual-In-Line Package CD4020BM CD4020BCTL F 5953–1Top View Order Number CD4020B CD4040B or CD4060BDual-In-Line Package CD4040BM CD4040BCTL F 5953–2Top ViewDual-In-Line Package CD4060BM CD4060BCTL F 5953–3Top ViewC 1995National Semiconductor CorporationRRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Notes1and2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage(V DD)b0 5V to a18V Input Voltage(V IN)b0 5V to V DD a0 5V Storage Temperature Range(T S)b65 C to a150 C Package Dissipation(P D)Dual-In-Line700mW Small Outline500mW Lead Temperature(T L)(Soldering 10seconds)260 C Recommended Operating ConditionsSupply Voltage(V DD)a3V to a15V Input Voltage(V IN)0V to V DD Operating Temperature Range(T A)CD40XXBM b55 C to a125 C CD40XXBC b40 C to a85 CDC Electrical Characteristics CD40XXBM(Note2)Symbol Parameter Conditionsb55 C a25 C a125 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device Current V DD e5V V IN e V DD or V SS55150m AV DD e10V V IN e V DD or V SS1010300m AV DD e15V V IN e V DD or V SS2020600m AV OL Low Level Output Voltage V DD e5V0 0500 050 05VV DD e10V0 0500 050 05VV DD e15V0 0500 050 05VV OH High Level Output Voltage V DD e5V4 954 9554 95VV DD e10V9 959 95109 95VV DD e15V14 9514 951514 95VV IL Low Level Input Voltage V DD e5V V O e0 5V or4 5V1 521 51 5VV DD e10V V O e1 0V or9 0V3 043 03 0VV DD e15V V O e1 5V or13 5V4 064 04 0VV IH High Level Input Voltage V DD e5V V O e0 5V or4 5V3 53 533 5VV DD e10V V O e1 0V or9 0V7 07 067 0VV DD e15V V O e1 5V or13 5V11 011 0911 0VI OL Low Level Output Current V DD e5V V O e0 4V0 640 510 880 36mA(See Note3)V DD e10V V O e0 5V1 61 32 250 9mAV DD e15V V O e1 5V4 23 48 82 4mAI OH High Level Output Current V DD e5V V O e4 6V b0 64b0 51b0 88b0 36mA(See Note3)V DD e10V V O e9 5V b1 6b1 3b2 25b0 9mAV DD e15V V O e13 5V b4 2b3 4b8 8b2 4mAI IN Input Current V DD e15V V IN e0V b0 10b10b5b0 10b1 0m AV DD e15V V IN e15V0 1010b50 101 0m A Note1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices should be operated at these limits The tables of‘‘Recommended Operating Conditions’’and‘‘Electrical Characteristics’’provide conditions for actual device operationNote2 V SS e0V unless otherwise specifiedNote3 Data does not apply to oscillator points w0and w0of CD4060BM CD4060BC I OH and I OL are tested one output at a timeDC Electrical Characteristics40XXBC(Note2)Symbol Parameter Conditionsb40 C a25 C a85 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device Current V DD e5V V IN e V DD or V SS2020150m AV DD e10V V IN e V DD or V SS4040300m AV DD e15V V IN e V DD or V SS8080600m AV OL Low Level Output Voltage V DD e5V0 0500 050 05VV DD e10V0 0500 050 05VV DD e15V0 0500 050 05V2DC Electrical Characteristics40XXBC(Note2)(Continued)Symbol Parameter Conditionsb40 C a25 C a85 CUnits Min Max Min Typ Max Min MaxV OH High Level Output Voltage V DD e5V4 954 9554 95VV DD e10V9 959 95109 95VV DD e15V14 9514 951514 95VV IL Low Level Input Voltage V DD e5V V O e0 5V or4 5V1 521 51 5VV DD e10V V O e1 0V or9 0V3 043 03 0VV DD e15V V O e1 5V or13 5V4 064 04 0VV IH High Level Input Voltage V DD e5V V O e0 5V or4 5V3 53 533 5VV DD e10V V O e1 0V or9 0V7 07 067 0VV DD e15V V O e1 5V or13 5V11 011 0911 0VI OL Low Level Output Current V DD e5V V O e0 4V0 520 440 880 36mA(See Note3)V DD e10V V O e0 5V1 31 12 250 9mAV DD e15V V O e1 5V3 63 08 82 4mAI OH High Level Output Current V DD e5V V O e4 6V b0 52b0 44b0 88b0 36mA(See Note3)V DD e10V V O e9 5V b1 3b1 1b2 25b0 9mAV DD e15V V O e13 5V b3 6b3 0b8 8b2 4mAI IN Input Current V DD e15V V IN e0V b0 30b10b5b0 30b1 0m AV DD e15V V IN e15V0 3010b50 301 0m A AC Electrical Characteristics CD4020BM CD4020BC CD4040BM CD4040BCT A e25 C C L e50pF R L e200k t r e t f e20ns unless otherwise notedSymbol Parameter Conditions Min Typ Max Unitst PHL1 t PLH1Propagation Delay Time to Q1V DD e5V250550nsV DD e10V100210nsV DD e15V75150nst PHL t PLH Interstage Propagation Delay Time V DD e5V150330ns from Q n to Q n a1V DD e10V60125nsV DD e15V4590nst THL t TLH Transition Time V DD e5V100200nsV DD e10V50100nsV DD e15V4080nst WL t WH Minimum Clock Pulse Width V DD e5V125335nsV DD e10V50125nsV DD e15V40100nst rCL t fCL Maximum Clock Rise and Fall Time V DD e5V No Limit nsV DD e10V No Limit nsV DD e15V No Limit nsf CL Maximum Clock Frequency V DD e5V1 54MHzV DD e10V410MHzV DD e15V512MHzt PHL(R)Reset Propagation Delay V DD e5V200450nsV DD e10V100210nsV DD e15V80170nst WH(R)Minimum Reset Pulse Width V DD e5V200450nsV DD e10V100210nsV DD e15V80170nsC in Average Input Capacitance Any Input57 5pFC pd Power Dissipation Capacitance50pFAC Parameters are guaranteed by DC correlated testing3AC Electrical Characteristics CD4060BM CD4060BCT A e 25 C C L e 50pF R L e 200k t r e t f e 20ns unless otherwise notedSymbol ParameterConditions MinTyp Max Units t PHL4 t PLH4Propagation Delay Time to Q 4V DD e 5V 5501300ns V DD e 10V 250525ns V DD e 15V 200400ns t PHL t PLHInterstage Propagation Delay Time V DD e 5V 150330ns from Q n to Q n a 1V DD e 10V 60125ns V DD e 15V 4590ns t THL t TLHTransition TimeV DD e 5V 100200ns V DD e 10V 50100ns V DD e 15V 4080ns t WL t WHMinimum Clock Pulse WidthV DD e 5V 170500ns V DD e 10V 65170ns V DD e 15V 50125ns t rCL t fCLMaximum Clock Rise and Fall TimeV DD e 5V No Limit ns V DD e 10V No Limit ns V DD e 15V No Limitns f CLMaximum Clock FrequencyV DD e 5V 13MHz V DD e 10V 38MHz V DD e 15V 410MHz t PHL(R)Reset Propagation DelayV DD e 5V 200450ns V DD e 10V 100210ns V DD e 15V 80170ns t WH(R)Minimum Reset Pulse WidthV DD e 5V 200450ns V DD e 10V 100210ns V DD e 15V 80170ns C in Average Input Capacitance Any Input57 5pF C pdPower Dissipation Capacitance50pFAC Parameters are guaranteed by DC correlated testingCD4060B Typical Oscillator ConnectionsRC OscillatorTL F 5953–4Crystal OscillatorTL F 5953–54Schematic DiagramsCD4020BM CD4020BC Schematic DiagramTL F 5953–6CD4040BM CD4040BC Schematic DiagramTL F 5953–7CD4060BM CD4060BC Schematic DiagramTL F 5953–85C D 4020B M B C 14-S t a g e R i p p l e C a r r y B i n a r y C o u n t e r s C D 4040B M B C 12-S t a g e R i p p l e C a r r y B i n a r y C o u n t e r s C D 4060B M B C 14-S t a g e R i p p l e C a r r y B i n a r y C o u n t e r sPhysical Dimensions inches (millimeters)Ceramic Dual-In-Line Package (J)Order Number CD4020BMJ CD4020BCJCD4040BMJ CD4040BCJ CD4060BMJ or CD4060BCJNS Package Number J16AMolded Dual-In-Line Package (N)Order Number CD4020BMN CD4020BCNCD4040BMN CD4040BCN CD4060BMN or CD4060BCNNS Package Number N16ELIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One)MP4020High Power Switching ApplicationsHammer Drive, Pulse Motor Drive and Inductive LoadSwitching• Small package by full molding (SIP 10 pins)• High collector power dissipation (4-device operation):P T = 4 W (Ta = 25°C)• High collector current: I C (DC) = 2 A (max)• High DC current gain: h FE = 2000 (min) (V CE = 2 V, I C = 1 A)• Zener diode included between collector and baseMaximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnit Collector-base voltage V CBO50 V Collector-emitter voltage V CEO60 ± 10 VEmitter-base voltage V EBO8 VDC I C 2Collector currentPulse I CP 3A Continuous base current I B0.5 A Collector power dissipation(1 device operation)P C 2.0 W Collector power dissipation(4 devices operation)P T 4.0 W Junction temperature T j 150°C Storage temperature range T stg−55 to 150 °CArray Configuration Industrial ApplicationsUnit: mmJEDEC ―JEITA ―TOSHIBA 2-25A1AWeight: 2.1 g (typ.)R1 ≈ 5 kΩ R2≈ 300 ΩThermal CharacteristicsMax Unit Characteristics SymbolThermal resistance from junction toambientΣR th (j-a)31.3°C/W (4-devices operation, Ta = 25°C)Maximum lead temperature forsoldering purposesT L 260°C(3.2 mm from case for 10 s)Electrical Characteristics (Ta = 25°C)Markinglead (Pb)-free package orlead (Pb)-free finish.Collector current I C (A)h FE – I CD C c u r r e n t g a i n h F EBase current I B (mA)V CE – I BC o l l e c t o r -e m i t t e r v o l t a g e V C E (V ))Collector-emitter voltage V CE (V) I C – V CEC o l l e c t o r c u r r e n t I C (A )Base-emitter voltage V BE (V)I C – V BEC o l l e c t o r c u r r e n t I C (A )Collector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (s a t ) (V )Collector current I C (A)V BE (sat) – I CB a s e -e m i t t e r s a t u r a t i o n v o l t a g e V B E (s a t ) (V )0.3 0.5 1 3 5100.10.3 0.5 1 3 5100.10.03 0.05 0.10.3 1 0.5 3 5 10Ambienttemperature Ta (°C)P T– TaT o t a l p o w e r d i s s i p a t i o n P T (W )Total power dissipation P T (W)∆T j – P TJ u n c t i o n t e m p e r a t u r e i n c r e a s e ∆T j (°C )1 2 345r th – t wPulse width t w (s)T r a n s i e n t t h e r m a l r e s i s t a n c e r t h (°C /W )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )0.001 0.01 0.1110 100 10000.5 1 3 5 10 30 50 10040 80 120 160200• The information contained herein is subject to change without notice.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.030619EAARESTRICTIONS ON PRODUCT USE。
1.Product profile1.1General descriptionCombination of a PNP transistor with low V CEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457(SC-74) small plastic package. NPN complement: PMEM4020AND1.2FeaturesI 600 mW total power dissipation I High current capability up to 2 AI Reduces printed-circuit board area required I Reduces pick and place costs I Small plastic SMD package ITransistorN Low collector-emitter saturation voltage I DiodeN Ultra high-speed switching N Very low forward voltage N Guard ring protected1.3ApplicationsI DC-to-DC converters I Inductive load driversI General purpose load driversI Reverse polarity protection circuits IMOSFET drivers1.4Quick reference dataPMEM4020APDPNP transistor/Schottky rectifier moduleRev. 02 — 31 August 2009Product data sheetTable 1.Quick reference data Symbol ParameterConditions Min Typ Max Unit PNP transistorV CEO collector-emitter voltage open base --−40V I Ccollector current (DC)continuous;T s ≤ 55°C[1]--−2A[1]Soldering point of collector or cathode tab.2.Pinning information3.Ordering information4.Marking5.Limiting valuesSchottky barrier rectifierV R continuous reverse voltage --40V I Fcontinuous forward current--1ATable 1.Quick reference data …continued Symbol ParameterConditionsMin Typ Max Unit Table 2.Discrete pinningPin Description Simplified outline Symbol1emitter 2not connected 3cathode 4anode 5base 6collector132456sym04036145Table 3.Ordering informationType numberPackage NameDescriptionVersion PMEM4020APDSC-74plastic surface mounted package; 6 leadsSOT457Table 4.MarkingType number Marking code PMEM4020APDD3Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit PNP transistorV CBO collector-base voltage open emitter -−40V V CEO collector-emitter voltage open base -−40V V EBOemitter-base voltageopen collector-−5V[1]Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.[2]Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm 2 mounting pad for both collector and cathode.[3]Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.[4]Soldering point of collector or cathode tab.I Ccollector current (DC)continuous [1]-−0.75A continuous [2]-−1A continuous [3]-−1.3A continuous;T s ≤ 55°C[4]-−2A I CM peak collector current -−3A I BM peak base current -−1A P tottotal power dissipationT amb ≤ 25°C [1]-295mW T amb ≤ 25°C [2]-400mW T amb ≤ 25°C [3]-500mW T s ≤ 55°C[4]-1000mW T j junction temperature -150°C Schottky barrier rectifierV R continuous reverse voltage -40V I F continuous forward voltage -1A I FRM repetitive peak forward currentt p ≤ 1 ms;δ≤ 0.5- 3.5A I FSM non-repetitive peak forward currentt = 8 ms; square wave -10A P tottotal power dissipationT amb ≤ 25°C [1]-295mW T amb ≤ 25°C [2]-400mW T amb ≤ 25°C [3]-500mW T s ≤ 55°C[4]-1000mW T j junction temperature [2]-150°C Combined deviceP tot total power dissipation T amb ≤ 25°C[2]-600mW T stg storage temperature −65+150°C T ambambient temperature[2]−65+150°CTable 5.Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit6.Thermal characteristics[1]For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses P R are a significant part of the total power losses. Nomograms for determining the reverse power losses P R and I F(AV) rating will be available on request.[2]Soldering point of collector or cathode tab.[3]Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.[4]Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm 2 mounting pad for both collector and cathode tab.[5]Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.Table 6.Thermal characteristics [1]Symbol Parameter Conditions Min Typ Max Unit Single device R th(j-s)thermal resistance from junction to soldering point in free air [2]--95K/W R th(j-a)thermal resistance from junction to ambientin free air[3]--250K/W [4]--315K/W [5]--425K/W Combined device R th(j-a)thermal resistance from junction to ambientin free air[3]--208K/W7.Characteristics[1]Pulse test: t p ≤ 300µs;δ≤ 0.02Table 7.CharacteristicsT amb = 25°C unless otherwise specified Symbol ParameterConditionsMin Typ Max Unit PNP transistorI CBOcollector-base cut-off current V CB =−40 V; I E = 0 A --−100nA V CB =−40 V; I E = 0 A;T j = 150°C--−50µA I CEO collector-emitter cut-off current V CE =−30 V; I B = 0 A --−100nA I EBO emitter-base cut-off current V EB =−5 V; I C = 0 A --−100nAh FEDC current gainV CE =−5 V; I C =−1 mA 300--V CE =−5 V; I C =−100 mA 300--V CE =−5 V; I C =−500 mA 250-900V CE =−5 V; I C =−1 A 160--V CE =−5 V; I C =−2 A[1]50--V CEsatcollector-emitter saturation voltageI C =−100 mA; I B =−1 mA --−120mV I C =−500 mA; I B =−50 mA --−145mV I C =−1 A; I B =−100 mA --−260mV I C =−2 A; I B =−200 mA--−530mV R CEsat equivalent on-resistance I C =−1 A; I B =−100 mA [1]-180280m ΩV BEsat base-emittersaturation voltage I C =−1 A; I B =−100 mA [1]--−1.1V V BEon base-emitter turn-on voltageV CE =−5 V; I C =−1 A [1]--−1.0V f T transition frequency V CE =−10 V; I C =−50 mA;f = 100 MHz150--MHz C ccollector capacitanceV CB =−10 V; I E = i e = 0 A;f = 1 MHz --10pFSchottky barrier rectifier V Fcontinuous forward voltagesee Figure 1I F = 0.1 mA [1]-95130mV I F = 1 mA [1]-155210mV I F = 10 mA [1]-220270mV I F = 100 mA [1]-295350mV I F = 1000 mA[1]-540640mV I Rreverse currentsee Figure 2V R = 10 V [1]-720µA V R = 40 V[1]-30100µA C ddiode capacitanceV R = 1 V; f = 1 MHz;see Figure 3-4348pFSchottky barrier rectifier (1)T amb =150°C (2)T amb =85°C (3)T amb =25°CSchottky barrier rectifier (1)T amb =150°C (2)T amb =85°C (3)T amb =25°CFig 1.Forward current as a function of forward voltage; typical valuesFig 2.Reverse current as a function of reverse voltage; typical valuesSchottky barrier rectifier;T amb = 25°C; f = 1 MHzPNP transistor;V CE =−5 V (1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CFig 3.Diode capacitance as a function of reverse voltage; typical valuesFig 4.DC current gain as a function of collector current; typical values0.60.40.2010310210110−1mdb669I F (mA)V F (V)(1)(2)(3)020103040V R (V)mdb670105104103102101I R (µA)(1)(2)(3)05102010008015604020mdb671V R (V)C d (pF)012002004006008001000mhc088−10−1h FE −10−1I C (mA)−102−103−104(1)(2)(3)PNP transistor;V CE =−5 V (1)T amb =−55°C (2)T amb = 25°C (3)T amb = 150°CPNP transistor;I C /I B = 10(1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CFig 5.Base-emitter voltage as a function of collector current; typical valuesFig 6.Collector-emitter saturation voltage as a function of collector current; typical valuesPNP transistor;I C /I B = 10(1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CPNP transistor;V CE =−10 VFig 7.Equivalent on-resistance as a function of collector current; typical valuesFig 8.Transition frequency as a function of collector current−10−1−10−1mhc089−10−1−1−10V BE (V)I C (mA)−103−102−104(1)(2)(3)−103−102−10−1mhc090−1−10V CEsat (mV)I C (mA)−102−103−104(1)(2)(3)10110−1102mhc091−10−1−1−10R CEsat (Ω)I C (mA)−103−102−104(1)(2)(3)0−100030010020025050150−200−400f T (MHz)I C (mA)−600−800mhc0928.Application informationFig 9.DC-to-DC converterFig 10.Inductive load driver (relays, motors andbuzzers) with free-wheeling diodemgu866V OUTV INCONTROLLERmgu867V CCIN9.Package outlineFig 11.Package outline SOT457 (SC-74)REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECJEITA SOT457SC-74w BM b pD epin 1indexAA 1L pQdetail XH EE v M AA B yscalecX13245601 2 mmPlastic surface-mounted package (TSOP6); 6 leadsSOT457UNIT A 1b p c D E H E L p Q y w v mm0.10.0130.400.253.12.70.260.101.71.3e 0.953.02.50.20.10.2DIMENSIONS (mm are the original dimensions)0.60.20.330.23A 1.10.905-11-0706-03-1610.Packing informationTable 8.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package Description Packing quantity300010000 PMEM4020APD SOT457 4 mm pitch, 8 mm tape and reel; T1-115-1354 mm pitch, 8 mm tape and reel; T2-125-165 [1]For further information and the availability of packing methods, see Section13.分销商库存信息: NXPPMEM4020APD,115。
