MOS管规格书 5G06S_5A_60V_SOP-8
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07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS 55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片,全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道,N沟道MOS管各一A04403 30V 6.1A 单P沟道 8脚贴片A04404 30V 8.5A 单N沟道 8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道,8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道 8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道,N沟道MOS管各一A0D405 30V,18A,P高压板MOS管贴A0D408 30V,18A,P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V,38/27A,N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1,60V 4。
MOS管工作原理及芯片汇总一:MOS管参数解释MOS管介绍在使用MOS管设计开关电源或者马达驱动电路的时候,一般都要考虑MOS的导通电阻,最大电压等,最大电流等因素。
MOSFET管是FET的一种,可以被制造成增强型或耗尽型,P沟道或N沟道共4种类型,一般主要应用的为增强型的NMOS管和增强型的PMOS管,所以通常提到的就是这两种。
这两种增强型MOS管,比较常用的是NMOS.原因是导通电阻小且容易制造.所以开关电源和马达驱动的应用中,一般都用NMOS。
在MOS管内部,漏极和源极之间会寄生一个二极管。
这个叫体二极管,在驱动感性负载(如马达),这个二极管很重要,并且只在单个的MOS管中存在此二极管,在集成电路芯片内部通常是没有的。
MOS管的三个管脚之间有寄生电容存在,这不是我们需要的,而是由于制造工艺限制产生的。
寄生电容的存在使得在设计或选择驱动电路的时候要麻烦一些,但没有办法避免。
MOS管导通特性导通的意思是作为开关,相当于开关闭合.NMOS的特性,Vgs大于一定的值就会导通,适合用于源极接地时的情况(低端驱动),只要栅极电压达到一定电压(如4V或10V, 其他电压,看手册)就可以了。
PMOS的特性,Vgs小于一定的值就会导通,适合用于源极接VCC时的情况(高端驱动)。
但是,虽然PMOS可以很方便地用作高端驱动,但由于导通电阻大,价格贵,替换种类少等原因,在高端驱动中,通常还是使用NMOS.MOS开关管损失不管是NMOS还是PMOS,导通后都有导通电阻存在,因而在DS间流过电流的同时,两端还会有电压,这样电流就会在这个电阻上消耗能量,这部分消耗的能量叫做导通损耗。
选择导通电阻小的MOS管会减小导通损耗.现在的小功率MO S管导通电阻一般在几毫欧,几十毫欧左右MOS在导通和截止的时候,一定不是在瞬间完成的。
MOS两端的电压有一个下降的过程,流过的电流有一个上升的过程,在这段时间内,MOS管的损失是电压和电流的乘积,叫做开关损失。
场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92DISCRETEMOS FET 2N7002 60V,0.2A SOT-23DISCRETEMOS FET IRF510A 100V,5.6A TO-220DISCRETEMOS FET IRF520A 100V,9.2A TO-220DISCRETEMOS FET IRF530A 100V,14A TO-220DISCRETEMOS FET IRF540A 100V,28A TO-220DISCRETEMOS FET IRF610A 200V,3.3A TO-220DISCRETEMOS FET IRF620A 200V,5A TO-220DISCRETEMOS FET IRF630A 200V,9A TO-220DISCRETEMOS FET IRF634A 250V,8.1A TO-220DISCRETEMOS FET IRF640A 200V,18A TO-220DISCRETEMOS FET IRF644A 250V,14A TO-220DISCRETEMOS FET IRF650A 200V,28A TO-220DISCRETEMOS FET IRF654A 250V,21A TO-220DISCRETEMOS FET IRF720A 400V,3.3A TO-220MOS FET IRF730A 400V,5.5A TO-220DISCRETEMOS FET IRF740A 400V,10A TO-220DISCRETEMOS FET IRF750A 400V,15A TO-220DISCRETEMOS FET IRF820A 500V,2.5A TO-220DISCRETEMOS FET IRF830A 500V,4.5A TO-220DISCRETEMOS FET IRF840A 500V,8A TO-220DISCRETEMOS FET IRF9520 TO-220DISCRETEMOS FET IRF9540 TO-220DISCRETEMOS FET IRF9610 TO-220DISCRETEMOS FET IRF9620 TO-220DISCRETEMOS FET IRFP150A 100V,43A TO-3PDISCRETEMOS FET IRFP250A 200V,32A TO-3PDISCRETEMOS FET IRFP450A 500V,14A TO-3PDISCRETEMOS FET IRFR024A 60V,15A D-PAKDISCRETEMOS FET IRFR120A 100V,8.4A D-PAKMOS FET IRFR214A 250V,2.2A D-PAKDISCRETEMOS FET IRFR220A 200V,4.6A D-PAKDISCRETEMOS FET IRFR224A 250V,3.8A D-PAKDISCRETEMOS FET IRFR310A 400V,1.7A D-PAKDISCRETEMOS FET IRFR9020TF D-PAKDISCRETEMOS FET IRFS540A 100V,17A TO-220FDISCRETEMOS FET IRFS630A 200V,6.5A TO-220FDISCRETEMOS FET IRFS634A 250V,5.8A TO-220FDISCRETEMOS FET IRFS640A 200V,9.8A TO-220FDISCRETEMOS FET IRFS644A 250V,7.9A TO-220FDISCRETEMOS FET IRFS730A 400V,3.9A TO-220FDISCRETEMOS FET IRFS740A 400V,5.7A TO-220FDISCRETEMOS FET IRFS830A 500V,3.1A TO-220FDISCRETEMOS FET IRFS840A 500V,4.6A TO-220FDISCRETEMOS FET IRFS9Z34 -60V,12A TO-220FMOS FET IRFSZ24A 60V,14A TO-220FDISCRETEMOS FET IRFSZ34A 60V,20A TO-220FDISCRETEMOS FET IRFU110A 100V,4.7A I-PAKDISCRETEMOS FET IRFU120A 100V,8.4A I-PAKDISCRETEMOS FET IRFU220A 200V,4.6A I-PAKDISCRETEMOS FET IRFU230A 200V,7.5A I-PAKDISCRETEMOS FET IRFU410A 500V I-PAKDISCRETEMOS FET IRFU420A 500V,2.3A I-PAKDISCRETEMOS FET IRFZ20A TO-220DISCRETEMOS FET IRFZ24A 60V,17A TO-220DISCRETEMOS FET IRFZ30 TO-220DISCRETEMOS FET IRFZ34A 60V,30A TO-220DISCRETEMOS FET IRFZ40 TO-220DISCRETEMOS FET IRFZ44A 60V,50A TO-220DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220FMOS FET IRLSZ14A 60V,8A,Logic TO-220FDISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220DISCRETEMOS FET SFP36N03 30V,36A TO-220DISCRETEMOS FET SFP65N06 60V,65A TO-220DISCRETEMOS FET SFP9540 -100V,17A TO-220DISCRETEMOS FET SFP9634 -250V,5A TO-220DISCRETEMOS FET SFP9644 -250V,8.6A TO-220DISCRETEMOS FET SFP9Z34 -60V,18A TO-220DISCRETEMOS FET SFR9214 -250V,1.53A D-PAKDISCRETEMOS FET SFR9224 -250V,2.5A D-PAKDISCRETEMOS FET SFR9310 -400V,1.5A D-PAKDISCRETEMOS FET SFS9630 -200V,4.4A TO-220FDISCRETEMOS FET SFS9634 -250V,3.4A TO-220FDISCRETEMOS FET SFU9220 -200V,3.1A I-PAKMOS FET SSD2002 25V N/P Dual 8SOPDISCRETEMOS FET SSD2019 20V P-ch Dual 8SOPDISCRETEMOS FET SSD2101 30V N-ch Single 8SOPDISCRETEMOS FET SSH10N80A 800V,10A TO-3PDISCRETEMOS FET SSH10N90A 900V,10A TO-3PDISCRETEMOS FET SSH5N90A 900V,5A TO-3PDISCRETEMOS FET SSH60N10 TO-3PDISCRETEMOS FET SSH6N80A 800V,6A TO-3PDISCRETEMOS FET SSH70N10A 100V,70A TO-3PDISCRETEMOS FET SSH7N90A 900V,7A TO-3PDISCRETEMOS FET SSH9N80A 800V,9A TO-3PDISCRETEMOS FET SSP10N60A 600V,9A TO-220DISCRETEMOS FET SSP1N60A 600V,1A TO-220DISCRETEMOS FET SSP2N90A 900V,2A TO-220DISCRETEMOS FET SSP35N03 30V,35A TO-220MOS FET SSP3N90A 900V,3A TO-220DISCRETEMOS FET SSP4N60A 600V,4A TO-220DISCRETEMOS FET SSP4N60AS 600V,4A TO-220DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220DISCRETEMOS FET SSP5N90A 900V,5A TO-220DISCRETEMOS FET SSP60N06 60V,60A TO-220DISCRETEMOS FET SSP6N60A 600V,6A TO-220DISCRETEMOS FET SSP70N10A 100V,55A TO-220DISCRETEMOS FET SSP7N60A 600V,7A TO-220DISCRETEMOS FET SSP7N80A 800V,7A TO-220DISCRETEMOS FET SSP80N06A 60V,80A TO-220DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAKDISCRETEMOS FET SSR2N60A 600V,1.8A D-PAKDISCRETEMOS FET SSR3055A 60V,8A D-PAKDISCRETEMOS FET SSS10N60A 600V,5.1A TO-220FMOS FET SSS2N60A 600V,1.3A TO-220FDISCRETEMOS FET SSS3N80A 800V,2A TO-220FDISCRETEMOS FET SSS3N90A 900V,2A TO-220FDISCRETEMOS FET SSS4N60A 600V,3.5A TO-220(F/P)DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220(F/P)DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220FDISCRETEMOS FET SSS4N90AS 900V,2.8A TO-220FDISCRETEMOS FET SSS5N80A 800V,3A TO-220FDISCRETEMOS FET SSS6N60A 600V, TO-220(F/P)。
1DescriptionThe AP5G06S uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 60V I D =4.8 AR DS(ON) < 32mΩ @ V GS =10V V DS = -60V I D =-3.7 A R DS(ON) < 70mΩ @ V GS =10VApplicationBattery protection Load switchUninterruptible power supplyAbsolute Maximum Ratings (T =25℃unless otherwise noted)=3.3,=15V , V1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation2=3.3,=-15V , V1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation34150N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-SourceFig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) v.s T J50.0010.010.110.000010.00010.0010.010.1110100t , Pulse Width (s)N o r m a l i z e d T h e r m a l R e s p o n s e (R θJ C )I ASV GSBV DSSV DD EAS=12L x I AS 2 x BV DSSBV DSS -V DD Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform6150P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-SourceFig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) v.s T J7Fig.8 Safe Operating Area Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform8Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems,aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating conditionranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, suchproducts must not be exported without obtaining the export license from the authorities concerned inaccordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, orotherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is notguaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.9。
常用全系列场效应管MOS管型号参数封装资1.IRF系列:IRF540N、IRF840、IRF3205等IRF系列是一种N沟道MOS管,具有低电源电流和高开关速度特点,可以工作在高频率下。
常用的封装有TO-220、TO-247、D2-Pak等。
-IRF540N参数:导通电阻:0.077Ω最大耗散功率:150W最大漏电流:50μA最大栅源电压:100V最大漏源电压:100V最大栅极电荷:49nC-IRF840参数:导通电阻:0.85Ω最大耗散功率:125W最大漏电流:10μA最大栅源电压:500V最大漏源电压:500V最大栅极电荷:90nC-IRF3205参数:导通电阻:8mΩ最大耗散功率:110W最大漏电流:250μA最大栅源电压:20V最大漏源电压:55V最大栅极电荷:75nC2.IRFP系列:IRFP250N、IRFP460等IRFP系列是一种P沟道MOS管,具有低导通电阻和高开关速度特点,适合高频率下的应用。
常用的封装有TO-247、TO-3P等。
-IRFP250N参数:导通电阻:0.095Ω最大耗散功率:200W最大漏电流:250μA最大栅源电压:100V最大漏源电压:200V最大栅极电荷:73nC-IRFP460参数:导通电阻:0.27Ω最大耗散功率:180W最大栅源电压:500V最大漏源电压:500V最大栅极电荷:123nC3.IRL系列:IRL540N、IRL3713等IRL系列是一种低电平驱动的MOS管,具有低导通电阻和高开关速度特点,适合低电平驱动电路。
常用的封装有TO-220、D2-Pak等。
-IRL540N参数:导通电阻:0.054Ω最大耗散功率:120W最大漏电流:50μA最大栅源电压:55V最大漏源电压:100V最大栅极电荷:32nC-IRL3713参数:导通电阻:7.5mΩ最大耗散功率:60W最大漏电流:50μA最大栅源电压:20V最大栅极电荷:20nC以上是常用全系列场效应管MOS管型号参数封装资的介绍,不同型号的MOS管具有不同的特点和适用场景,用户可以根据实际需求选择适合的型号和封装方式。
常用全系列场效应管M OS管型号参数封装资料场效应管分类型号简介封装DIS CRETEMOSFET 2N7000 60V,0.115A TO-92DIS CRETEMOSFET 2N7002 60V,0.2A SOT-23DI SCRET EMOS FETI RF510A 100V,5.6A TO-220D ISCRE TEMO S FETIRF520A 100V,9.2A TO-220DISCR ETEM OS FE T IRF530A 100V,14A TO-220DISC RETEMOS F ET IRF540A 100V,28A T O-220DIS CRETEMOSFET IR F610A200V,3.3A TO-220DI SCRET EMOS FETI RF620A 200V,5A TO-220D ISCRE TEMO S FETIRF630A 200V,9A TO-220DISCR ETEM OS FE T IRF634A 250V,8.1A TO-220DISC RETEMOS F ET IRF640A 200V,18A T O-220DIS CRETEMOSFET IR F644A250V,14A TO-220DI SCRET EMOS FETI RF650A 200V,28A TO-220D ISCRE TEMO S FETIRF654A 250V,21A TO-220DISCR ETEM OS FE T IRF720A 400V,3.3A TO-220DISC RETEMOS F ET IRF730A 400V,5.5A T O-220 DIS CRETEMOSFET IR F740A400V,10A TO-220 DI SCRET EMOS FETI RF750A 400V,15A TO-220 D ISCRE TEMO S FETIRF820A 500V,2.5A TO-220 DISCR ETEM OS FE T IRF830A 500V,4.5A TO-220DISC RETEMOS F ET IRF840A 500V,8AT O-220 DIS CRETEMOSFET IR F9520TO-220DI SCRET EMOS FETI RF9540 TO-220D ISCRE TEMO S FETIRF9610 TO-220DISCR ETEM OS FE T IRF9620 TO-220DISC RETEMOS F ET IRF P150A 100V,43A T O-3PDISC RETEMOS F ET IRF P250A 200V,32A T O-3PDISC RETEMOS F ET IRF P450A 500V,14A T O-3PDISC RETEMOS F ET IRF R024A 60V,15AD-PAKDISC RETEMOS F ET IRF R120A 100V,8.4A D-PAKDISC RETEMOS F ET IRF R214A 250V,2.2A D-PAKDISC RETEMOS F ET IRF R220A 200V,4.6A D-PAKDISC RETEMOS F ET IRF R224A 250V,3.8A D-PAKDISC RETEMOS F ET IRF R310A 400V,1.7A D-PAKDISC RETEMOS F ET IRF R9020TF D-PAKDISC RETEMOS F ET IRF S540A 100V,17A T O-220F DI SCRET EMOS FETI RFS630A 200V,6.5A TO-220F DISCR ETEM OS FE T IRFS634A 250V,5.8A TO-220F DIS CRETEMOSFET IR FS640A 200V,9.8A TO-220F D ISCRE TEMO S FETIRFS644A 250V,7.9A TO-220FDISC RETEMOS F ET IRF S730A 400V,3.9A T O-220F DI SCRET EMOS FETI RFS740A 400V,5.7A TO-220F DISCR ETEM OS FE T IRFS830A 500V,3.1A TO-220F DIS CRETEMOSFET IR FS840A 500V,4.6A TO-220F D ISCRE TEMO S FETIRFS9Z34 -60V,12A TO-220FDISC RETEMOS F ET IRF SZ24A 60V,14AT O-220FDI SCRET EMOS FETI RFSZ34A 60V,20A TO-220FDISCR ETEM OS FE T IRFU110A 100V,4.7A I-PAKDISCR ETEM OS FE T IRFU120A 100V,8.4A I-PAKDISCR ETEM OS FE T IRFU220A 200V,4.6A I-PAKDISCR ETEM OS FE T IRFU230A 200V,7.5A I-PAKDISCR ETEM OS FE T IRFU410A 500V I-PAKDISC RETEMOS F ET IRF U420A 500V,2.3A I-PAKDIS CRETEMOSFET IR FZ20A TO-220D ISCRE TEMO S FETIRFZ24A 60V,17A TO-220DISC RETEMOS F ET IRF Z30 TO-220DI SCRET EMOS FETI RFZ34A 60V,30A TO-220DISCR ETEM OS FE T IRFZ40 T O-220DIS CRETEMOSFET IR FZ44A60V,50A TO-220D ISCRE TEMO S FETIRLS530A 100V,10.7A,Log ic T O-220F DI SCRET EMOS FETI RLSZ14A 60V,8A,Log ic TO-220F D ISCRE TEMO S FETIRLZ24A 60V,17A,L ogic TO-220 D ISCRE TEMO S FETIRLZ44A 60V,50A,L ogic TO-220 D ISCRE TEMO S FETSFP36N03 30V,36A TO-220DISCR ETEM OS FE T SFP65N06 60V,65A TO-220DISC RETEMOS F ET SFP9540 -100V,17A T O-220DIS CRETEMOSFET SF P9634-250V,5A TO-220DI SCRET EMOS FETS FP9644 -250V,8.6A TO-220D ISCRE TEMO S FETSFP9Z34 -60V,18A TO-220DISCR ETEM OS FE T SFR9214 -250V,1.53A D-PAKDISC RETEMOS F ET SFR9224 -250V,2.5A D-PAKDIS CRETEMOSFET SF R9310 -400V,1.5A D-PA KDI SCRET EMOS FETS FS9630 -200V,4.4A TO-220FDISC RETEMOS F ET SFS9634 -250V,3.4A TO-220FD ISCRE TEMO S FETSFU9220 -200V,3.1A I-PAKDISCR ETEM OS FE T SSD2002 25V N/P Du al 8SOPDISC RETEMOS F ET SSD2019 20VP-chDual 8SOP DIS CRETEMOSFET SS D2101 30V N-ch Sing le 8SOP DISCR ETEM OS FE T SSH10N80A 800V,10A TO-3P DISCR ETEM OS FE T SSH10N90A 900V,10A TO-3P DISCR ETEM OS FE T SSH5N90A 900V,5A TO-3P DISCR ETEM OS FE T SSH60N10 TO-3PDISCR ETEM OS FE T SSH6N80A 800V,6A TO-3P DISCR ETEM OS FE T SSH70N10A 100V,70A TO-3P DISCR ETEM OS FE T SSH7N90A 900V,7A TO-3P DISCR ETEM OS FE T SSH9N80A 800V,9A TO-3P DISCR ETEM OS FE T SSP10N60A 600V,9A TO-220DISC RETEMOS F ET SSP1N60A 600V,1AT O-220 DIS CRETEMOSFET SS P2N90A 900V,2A TO-220 DI SCRET EMOS FETS SP35N03 30V,35A TO-220 D ISCRE TEMO S FETSSP3N90A 900V,3A TO-220 DISCR ETEM OS FE T SSP4N60A 600V,4A TO-220DISC RETEMOS F ET SSP4N60A S 600V,4AT O-220 DIS CRETEMOSFET SS P4N90AS 900V,4.5A TO-220 D ISCRE TEMO S FETSSP5N90A 900V,5A TO-220D ISCRE TEMO S FETSSP60N06 60V,60A TO-220D ISCRE TEMO S FETSSP6N60A 600V,6A TO-220D ISCRE TEMO S FETSSP70N10A 100V,55A TO-220 D ISCRE TEMO S FETSSP7N60A 600V,7A TO-220D ISCRE TEMO S FETSSP7N80A 800V,7A TO-220D ISCRE TEMO S FETSSP80N06A 60V,80A TO-220 D ISCRE TEMO S FETSSR1N60A 600V,0.9A D-P AK D ISCRE TEMO S FETSSR2N60A 600V,1.8A D-P AK D ISCRE TEMO S FETSSR3055A 60V,8A D-P AKD ISCRE TEMO S FETSSS10N60A 600V,5.1A TO-220FDISC RETEMOS F ET SSS2N60A 600V,1.3A T O-220F DI SCRET EMOS FETS SS3N80A 800V,2A TO-220FDISCR ETEM OS FE T SSS3N90A 900V,2A TO-220FDISC RETEMOS F ET SSS4N60A 600V,3.5A T O-220(F/P) DIS CRETEMOSFET SS S4N60AS 600V,2.3A TO-220(F/P) DI SCRET EMOS FETS SS4N60AS 600V,2.3A TO-220FDISCR ETEM OS FE T SSS4N90AS 900V,2.8A TO-220FDIS CRETEMOSFET SS S5N80A 800V,3A TO-220FD ISCRE TEMO S FETSSS6N60A 600V, TO-220(F/P)常用贴片三极管查询贴片三极管型号查询直插封装的型号贴片的型号9011 1T9012 2T9013 J39014J69015 M69016 Y69018 J8S8050 J3YS8550 2T Y8050 Y18550Y22S A1015 BA2SC1815 HF2SC945 CRMMBT3904 1AMMM BT3906 2AMMBT2222 1PMMB T5401 2LM MBT5551 G1MMBT A42 1DMMB TA922DBC807-16 5ABC807-25 5BBC807-40 5CB C817-16 6ABC817-256BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838AD2N7002702回答人的补充2010-02-0117:31 Stem pel TypHerst.Ba seG eh?us eSt andar d Ver gleic hstypJ0HSM S-2840HPCSOT23sch ottky diod eJ01S O2906RN2N2906J03S O2907ARR2N2907AJ05SO2907RR2N2907J1HSMS-2841HPKSO T23schot tky d iodeJ1ZC830Ze tCZC820 v arica ps J1B SS138LMo tMSOT23n-ch en h TMO S fet J12SO2906A RR2N2906AJ1AZC830AZe tCSOT23va ricap hype rabru pt 28V 10p F@2VJ1BZC830BZetCSO T23varic ap hy perab rupt28V 10pF@2V J2ZC833ZetCSO T23ZC823J2AZC833AZetCS OT23vari cap h ypera brupt 28V33pF@2V J2BZC833BZe tCSOT23va ricap hype rabru pt 28V 33p F@2VJ3ZC831Ze tCSOT23ZC821J32SO5400RSGSR2N5400J33S O5401RSG SR2N5401J39SO692RSGSp np Vc e 300VJ3AZ C831AZetCSOT23var 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场效应管分类型号简介封装DISCR ETEM OS FE T 2N7000 60V,0.115ATO-92 DISC RETEMOS F ET 2N700260V,0.2A S OT-23 DISC RETEMOS F ET IR F510A 100V,5.6A TO-220 DI SCRET EMOS FETIRF520A 100V,9.2A TO-220DISCR ETEM OS FE T IRF530A100V,14A T O-220 DISC RETEMOS F ET IR F540A 100V,28ATO-220 DIS CRETEMOSFET I RF610A 200V,3.3A TO-220 D ISCRE TEMO S FET IRF620A 200V,5A TO-220 D ISCRE TEMO S FET IRF630A 200V,9A TO-220 D ISCRE TEMO S FET IRF634A 250V,8.1A T O-220 DISC RETEMOS F ET IR F640A 200V,18ATO-220 DIS CRETEMOSFET I RF644A 250V,14A TO-220 DI SCRET EMOS FETIRF650A 200V,28A TO-220 D ISCRE TEMO S FET IRF654A 250V,21A TO-220DISCR ETEM OS FE T IRF720A400V,3.3ATO-220 DIS CRETEMOSFET I RF730A 400V,5.5A TO-220 D ISCRE TEMO S FET IRF740A 400V,10A TO-220DISCR ETEM OS FE T IRF750A400V,15A T O-220 DISC RETEMOS F ET IR F820A 500V,2.5A TO-220 DI SCRET EMOS FETIRF830A 500V,4.5A TO-220DISCR ETEM OS FE T IRF840A500V,8A TO-220DISCR ETEM OS FE T IRF9520-100V,-6ATO-220 DIS CRETEDISCR ETEM OS FE T IRF9610-200V,-1.8A TO-220 D ISCRE TEMO S FET IRF9620 -200V,-3.5A TO-220 DI SCRET EMOS FETIRFP150A 100V,43A TO-3PD ISCRE TEMO S FET IRFP250A200V,32A T O-3PDISCR ETEM OS FE T IRF P450A 500V,14ATO-3P DISC RETEMOS F ET IR FR024A 60V,15AD-PAK DISC RETEMOS F ET IR FR120A 100V,8.4A D-P AK DI SCRET EMOS FETIRFR214A 250V,2.2A D-PAKDISCR ETEM OS FE T IRF R220A 200V,4.6A D-PA K DIS CRETEMOSFET I RFR224A 250V,3.8A D-PAK D ISCRE TEMO S FET IRFR310A400V,1.7AD-PAK DISC RETEMOS F ET IR FR9020 -50V,-9.9A D-PAK D ISCRE TEMO S FET IRFS540A100V,17A T O-220F DIS CRETEMOSFET I RFS630A 200V,6.5A TO-220F DISC RETEMOS F ET IR FS634A 250V,5.8A TO-220FDISCR ETEM OS FE T IRF S640A 200V,9.8A TO-220F D ISCRE TEMO S FET IRFS644A250V,7.9ATO-220F DI SCRET EMOS FETIRFS730A 400V,3.9A T O-220F DIS CRETEMOSFET I RFS740A 400V,5.7A TO-220F DISC RETEMOS F ET IR FS830A 500V,3.1A TO-220FDISCR ETEM OS FE T IRF S840A 500V,4.6A TO-220F D ISCRE TEMO S FET IRFS9Z34-60V,-12ATO-220F DI SCRET EDISCR ETEM OS FE T IRF SZ34A 60V,20A T O-220FDIS CRETEMOSFET I RFU110A 100V,4.7A I-PAKD ISCRE TEMO S FET IRFU120A100V,8.4AI-PAKDISC RETEMOS F ET IR FU220A 200V,4.6A I-P AKDI SCRET EMOS FETIRFU230A 200V,7.5A I-PAKDISCR ETEM OS FE T IRF U410A 500V ,1.2A I-P AKDI SCRET EMOS FETIRFU420A 500V,2.3A I-PAKDISCR ETEM OS FE T IRF Z20A50V,15A TO-220DISCR ETEM OS FE T IRF Z24A60V,17A TO-220DISCR ETEM OS FE T IRF Z30 50V,30A TO-220D ISCRE TEMO S FET IRFZ34A 60V,30A TO-220D ISCRE TEMO S FET IRFZ40 50V,50A TO-220DI SCRET EMOS FETIRFZ44A 60V,50A TO-220DI SCRET EMOS FETIRLS530A 100V,10.7A,Logic TO-220F D ISCRE TEMO S FET IRLS Z14A60V,8A,Log ic TO-220F DISC RETEMOS F ET IR LZ24A 60V,17A,L ogicTO-220DIS CRETEMOSFET I RLZ44A 60V,50A,Logic TO-220DI SCRET EMOS FETSFP36N03 30V,36A TO-220D ISCRE TEMO S FET SFP65N0660V,65A TO-220DISCR ETEM OS FE T SFP9540-100V,-17A TO-220DI SCRET EMOS FETSFP9634 -250V,-5A TO-220DISCR ETEM OS FE T SFP9644-250V,-8.6A TO-220D ISCRE TEDISC RETEMOS F ET SF R9214 -250V,-1.53A D-PAKDISCR ETEM OS FE T SFR9224-250V,-2.5A D-P AK DI SCRET EMOS FETSFR9310 -400V,-1.5AD-PAK DISC RETEMOS F ET SF S9630 -200V,-4.4A TO-220F DISC RETEMOS F ET SF S9634 -250V,-3.4A TO-220F DISC RETEMOS F ET SF U9220 -200V,-3.1A I-PAKD ISCRE TEMO S FET SSD2002 25V N/P Dua l 8SO P DIS CRETEMOSFET S SD2019 20V P-ch Dual 8SOP DISC RETEMOS F ET SS D2101 30VN-chSingl e 8SO P DIS CRETEMOSFET S SH10N80A 800V,10A TO-3P D ISCRE TEMO S FET SSH10N90A 900V,10ATO-3P DISC RETEMOS F ET SS H5N90A 900V,5ATO-3P DISC RETEMOS F ET SS H60N10 100V,60A TO-3PDIS CRETEMOSFET S SH6N80A 800V,6A TO-3PDIS CRETEMOSFET S SH70N10A 100V,70A TO-3P D ISCRE TEMO S FET SSH7N90A900V,7A TO-3PD ISCRE TEMO S FET SSH9N80A800V,9A TO-3PD ISCRE TEMO S FET SSP10N60A 600V,9A T O-220 DISC RETEMOS F ET SS P1N60A 600V,1ATO-220DIS CRETEMOSFET S SP2N90A 900V,2A TO-220DI SCRET EMOS FETSSP35N03 30V,35A TO-220D ISCRE TEMO S FET SSP3N90A900V,3A TO-220DISCR ETEDISC RETEMOS F ET SS P4N60AS 600V,4A TO-220DI SCRET EMOS FETSSP4N90AS900V,4.5ATO-220 DIS CRETEMOSFET S SP5N90A 900V,5A TO-220DI SCRET EMOS FETSSP60N06 60V,60A TO-220D ISCRE TEMO S FET SSP6N60A600V,6A TO-220DISCR ETEM OS FE T SSP70N10A 100V,55A TO-220DI SCRET EMOS FETSSP7N60A 600V,7A TO-220D ISCRE TEMO S FET SSP7N80A800V,7A TO-220DISCR ETEM OS FE T SSP80N06A 60V,80ATO-220DIS CRETEMOSFET S SR1N60A 600V,0.9A D-PAKD ISCRE TEMO S FET SSR2N60A600V,1.8AD-PAK DISC RETEMOS F ET SS R3055A 60V,8A D-PAKDISCR ETEM OS FE T SSS10N60A 600V,5.1A TO-220FDISCR ETEM OS FE T SSS2N60A 600V,1.3A TO-220F D ISCRE TEMO S FET SSS3N80A800V,2A TO-220F DISC RETEMOS F ET SS S3N90A 900V,2ATO-220FDI SCRET EMOS FETSSS4N60AS600V,2.3ATO-220F DI SCRET EMOS FETSSS4N90AS900V,2.8ATO-220F DI SCRET EMOS FETSSS5N80A 800V,3A TO-220FDISCR ETEM OS FE T SSS6N60600V, 3.2A TO-220(F/P) 。
(云峰自动化设备研发发团队 QQ群号:292640575)大功率贴片SO-8型CMOS管选型品牌神木型号全系列小封装、小体积、贴片场效应管种类结型(JFET)沟道类型N 沟道导电方式耗尽型用途VA/场输出级封装外形CHIP/小型片状材料N-FET硅N 沟道开启电压-60~250(V)夹断电压-(V)跨导-(μS)极间电容-(pF)低频噪声系数-(dB)最大漏极电流-(mA)最大耗散功率-(mW)型号封装沟道 VDS (V) Ids (A) Pd (w) 应用ME0102TN TO-92 N 30 1.52 0.78 负荷开关load switchME1302AT3 SC-70-3L N 30 2.6 0.90 负荷开关load switchME1303AT3 SC-70-3L P -20 -2.6 1.00 负荷开关load switchME1303 SOT-23 P -20 -3.4 1.25 负荷开关load switchME1304AT3 SC-70-3L N 20 1.8 0.40 负荷开关load switchME1304SAT3 SC-70-3L N 30 1.5 0.35 负荷开关load switchME1308 SC-70-6 N 30 1.6 0.35 负荷开关load switchME1472 SC-70-6 N 30 2.6 0.9 负荷开关load switchME2301 SOT-23 P -20 -2.6 1.25 负荷开关load switchME2301A SOT-23 P -20 -3.2 1.30 负荷开关load switchME2301B SOT-23 P -20 -2.7 1.30 负荷开关load switchME2302 SOT-23 N 20 2.8 1.25 负荷开关load switchME2303 SOT-23 P -30 -3.2 1.25 负荷开关load switchME2304 SOT-23 N 30 2.6 0.75 负荷开关load switchME2305 SOT-23 P -20 -4.0 1.40 负荷开关load switchME2305A SOT-23 P -20 -3.5 1.30 负荷开关load switchME2306 SOT-23 N 30 4.7 1.32 负荷开关load switchME2306A SOT-23 N 30 5.0 0.80 负荷开关load switchME2306D SOT-23 N 30 5 1.25 负荷开关load switchME2307 SOT-23 P -30 -3 1.25 负荷开关load switchME2307S SOT-23 P -30 -2 0.78 负荷开关load switchME2308 SOT-23 N 30 3.4 1.40 负荷开关load switchME2308S SOT-23 N 60 2.6 1.04 负荷开关load switchME2311 SOT-23 P -20 -2.1 1.30 负荷开关load switchME2314 SOT-23 N 20 5.0 1.30 负荷开关load switchME2316 SOT-23 N 30 3.4 0.96 负荷开关load switchME2318 SOT-23 N 20 3.6 1.25 负荷开关load switchME2318S SOT-23 N 40 4 1.04 负荷开关load switchME2320D SOT-23 N 20 6.5 1.40 负荷开关load switchME2322 SOT-23 N 55 3.1 1.30 负荷开关load switchME2323D SOT-23 P -20 -4.0 1.40 负荷开关load switchME2324D SOT-23 N 25 0.7 0.35 负荷开关load switchME2326A SOT-23 N 250 0.4 1.25 负荷开关load switchME2326B SOT-23 N 200 0.4 1.30 负荷开关load switchME2328 SOT-23 N 100 1.5 1.30 负荷开关load switchME2345A SOT-23 P -30 -3.6 1.40 负荷开关load switch ME2347 SOT-23 P -30 -3.3 1.40 负荷开关load switch ME2524 SOT-89 N 200 0.4 1.25 负荷开关load switch ME2524A SOT-89 N 200 0.4 1.30 负荷开关load switch ME2602 SOT-223 N 100 4.0 3.00 负荷开关load switch ME2624 SOT-223 N 200 0.5 2.20 负荷开关load switch ME2624A SOT-223 N 250 0.5 2.20 负荷开关load switch ME3424 TSOP6 N 30 6.7 2.00 负荷开关load switchME3424D TSOP6 N 30 6.7 2.00 负荷开关load switch ME3433D TSOP6 P -20 -4.0 1.40 负荷开关load switch ME3446 TSOP6 N 20 5.3 2.00 负荷开关load switchME3481 TSOP6 P -30 -5.0 1.70 负荷开关load switch ME3483 TSOP6 P -60 -3.4 1.70 负荷开关load switch ME3491D TSOP6 P -20 -5.0 2.00 负荷开关load switch ME3500 TSOP6 P+N 30 4.5 1.14 逆变器INVERTERME3500 TSOP6 P+N -30 -3.2 1.25 逆变器INVERTERME3585 TSOP6 P+N 20 2.3 0.78 逆变器INVERTERME3585 TSOP6 P+N -20 -1.9 0.78 逆变器INVERTERME3587 TSOP6 P+N 20 3.4 1.18 逆变器INVERTERME3587 TSOP6 P+N -20 -2.0 0.70 逆变器INVERTERME3589 TSOP6 P+N 20 3.9 1.20 逆变器INVERTERME3589 TSOP6 P+N -20 -3.4 1.30 逆变器INVERTERME3902 TSOP6 Dual N 30 2.6 0.90 逆变器INVERTERME3981 TSOP6 Dual P -20 -3.6 1.30 逆变器INVERTER ME3983 TSOP6 Dual P -30 -3.6 1.30 逆变器INVERTER ME4174 SO-08 N 30 15.8 2.50 直流转换DC-DCME4336 SO-08 N 30 16.0 2.00 直流转换DC-DCME4410A SO-08 N 30 10.0 2.50 直流转换DC-DCME4410AD SO-08 N 30 11.0 2.50 直流转换DC-DCME4410B SO-08 N 30 8.5 2.00 直流转换DC-DCME4410BD SO-08 N 30 9.6 2.50 直流转换DC-DCME4411 SO-08 P -30 -11.0 2.00 负荷开关load switch ME4412 SO-08 N 30 9.3 2.50 直流转换DC-DCME4413D SO-08 P -12 -11.5 2.78 负荷开关load switch ME4425 SO-08 P -30 -11.4 2.50 负荷开关load switch ME4435 SO-08 P -30 -9.1 2.50 负荷开关load switch ME4436 SO-08 N 60 7.1 2.70 逆变器INVERTERME4456 SO-08 N 40 8.0 2.50 逆变器INVERTERME4457 SO-08 P -40 -5.9 2.50 逆变器INVERTERME4460 SO-08 N 100 3.6 2.50 逆变器INVERTERME4502 SO-08 P+N 20 7.4 2.00 逆变器INVERTERME4502 SO-08 P+N -20 -5.0 2.00 逆变器INVERTERME4542 SO-08 P+N 30 8.0 2.60 逆变器INVERTERME4542 SO-08 P+N -30 -6.9 2.70 逆变器INVERTERME4542D SO-08 P+N 30 6.8 2.00 逆变器INVERTERME4542D SO-08 P+N -30 -6.2 2.00 逆变器INVERTERME4563AD4 TO252-4L Dual N 40 7.4 2.60 逆变器INVERTER ME4544 SO-08 P+N 30 7.6 2.60 逆变器INVERTERME4544 SO-08 P+N -30 -5.1 2.50 逆变器INVERTERME4546D4 TO252-4L P+N 30 20.2 10.40 逆变器INVERTER ME4546D4 TO252-4L P+N -30 -13.5 10.40 逆变器INVERTER ME4542DD4 TO252-4L P+N 30 15.7 10.40 逆变器INVERTER ME4542DD4 TO252-4L P+N -30 13.5 10.40 逆变器INVERTER ME4542D4 TO252-4L P+N 30 16.5 10.40 逆变器INVERTER ME4542D4 TO252-4L P+N -30 -13.5 10.40 逆变器INVERTER ME4544D SO-08 P+N 30 6.7 2.00 逆变器INVERTERME4544D SO-08 P+N -30 4.5 2.00 逆变器INVERTERME4565 SO-08 P+N 40 5.5 2.00 逆变器INVERTERME4565 SO-08 P+N -40 -5.2 2.00 逆变器INVERTERME4565AD4 TO252-4L P+N 40 22.1 2.60 逆变器INVERTER ME4565AD4 TO252-4L P+N -40 -18.6 2.70 逆变器INVERTER ME4565D4 TO252-4L P+N 40 7.0 3.00 逆变器INVERTERME4626 SO-08 N 30 21.0 3.00 直流转换DC-DCME4626A SO-08 N 35 19.0 2.50 直流转换DC-DCME4810 SO-08 N 30 12.6 2.78 直流转换DC-DCME4812 SO-08 N 30 11.3 2.50 直流转换DC-DCME4812A SO-08 N 30 10.6 2.50 直流转换DC-DCME4812B SO-08 N 30 11.4 2.50 直流转换DC-DCME4856 SO-08 N 30 17.0 3.00 直流转换DC-DCME4856D SO-08 N 30 19.5 2.50 直流转换DC-DCME4894 SO-08 N 30 12.0 2.50 直流转换DC-DCME4920 SO-08 Dual N 30 6.9 2.00 直流转换DC-DCME4920D SO-08 Dual-N 30 6.7 2.00 直流转换DC-DCME4922 SO-08 Dual N 30 4.0 1.20 直流转换DC-DCME4925 SO-08 Dual P -30 -8.0 2.00 负荷开关load switch ME4932 SO-08 Dual N 30 9.0 1.95 直流转换DC-DCME4932 SO-08 Dual N 30 9.0 1.95 直流转换DC-DCME4936 SO-08 Dual N 30 6.6 2.50 直流转换DC-DCME4942 SO-08 Dual N 40 8.0 2.00 直流转换DC-DCME4946 SO-08 Dual N 60 6.4 2.70 逆变器INVERTERME4947 SO-08 P -60 -4.4 2.50 负荷开关load switchME4946AD4 TO252-4L Dual N 60 8.0 2.78 逆变器INVERTER ME4946D4 TO252-4L Dual N 60 7.3 2.80 逆变器INVERTER ME4946A SO-08 Dual N 60 3.8 2.00 逆变器INVERTERME4948 SO-08 Dual N 60 4.5 1.67 逆变器INVERTERME4948ED SO-08 Dual N 60 3.5 2.00 逆变器INVERTERME4950 SO-08 Dual N 100 3.3 2.00 逆变器INVERTERME4952 SO-08 Dual N 100 1.8 2.00 逆变器INVERTERME4953 SO-08 Dual P -30 -5.3 2.00 逆变器INVERTERME4970 SO-08 Dual N 30 9.5 1.80 逆变器INVERTERME5813D DFN3X2 P -12 9.0 2.50 数码相机DSCME3983 TSOP6 Dual P -30 -3.6 1.30 逆变器INVERTERME6874 TSOP6 Dual N 20 5.3 1.14 电池BATTERYME6913D TSSOP8 Dual P -12 -6.6 1.40 数码相机DSCME6970 TSSOP8 Dual-N 20 5.9 1.39 电池BATTERYME6970D TSSOP8 Dual-N 20 6.5 1.30 电池BATTERYME6972 TSSOP8 Dual-N 20 5.5 1.30 电池BATTERYME6978ED TSSOP8 Dual-N 30 6.4 1.30 电池BATTERYME6980ED TSSOP8 Dual N 20 7.3 1.30 电池BATTERYME6968ED TSSOP8 Dual-N 20 6.5 1.50 电池BATTERYME7170 PPAK5*6 N 30 25.0 2.78 直流转换DC-DC COREME7386 PPAK5*6 N 30 16.0 2.80 直流转换DC-DC COREME7607 PPAK5*6 P -35 -17 2.8 负荷开关load switchME7609D PPAK5*6 P -30 -9.4 2.8 负荷开关load switchME7634 PPAK5*6 N 30 16.7 2.78 直流转换DC-DC COREME7636 PPAK5*6 N 30 27 2.78 直流转换DC-DC COREME7636A PPAK5*6 N 35 24.6 2.78 直流转换DC-DC COREME7686 PPAK5*6 N 30 12.5 2.8 直流转换DC-DC COREME7686A PPAK5*6 N 25 12.5 2.8 直流转换DC-DC COREME7688 PPAK5*6 N 30 12.6 2.8 直流转换DC-DC COREME7114 DFN3.3*3.3 N 30 18.4 1.6 直流转换DC-DCME7230S DFN3.3*3.3 N 30 13.3 3.7 直流转换DC-DCME7413D DFN3.3*3.3 P -12 -12.6 3.8 负荷开关load switch ME7423S DFN3.3*3.3 P 30 -17.0 3.8 负荷开关load switch ME7716S DFN3.3*3.3 N 30 14.0 3.8 直流转换DC-DCME7802S DFN3.3*3.3 N 30 22.7 3.8 直流转换DC-DCME7804 DFN3.3*3.3 N 30 12.2 3.8 直流转换DC-DCM7804AS DFN3.3*3.3 N 30 11.5 3.8 直流转换DC-DCME7812S DFN3.3*3.3 N 30 15.2 3.1 直流转换DC-DCME7835S DFN3.3*3.3 P -30 -11.5 3.8 电池BATTERYME7837S DFN3.3*3.3 P -30 -10 3 电池BATTERYME7900ED DFN3*3 Dual N 20 8.3 2.4 电池BATTERYME7906ED DFN2*2 Dual N 20 8 2.4 电池BATTERYME8018 SO-08 N 35 15.0 1.90 电池BATTERYME8018A SO-08 N 35 18.4 2.50 电池BATTERYME8018C SO-08 N 35 18.4 2.50 电池BATTERYME8026A SO-08 N 30 16.8 2.50 直流转换DC-DCME8029 SO-08 N 30 25.0 2.50 电池BATTERYME8107 SO-08 P -35 -13.0 2.00 电池BATTERYME8117 SO-08 P -30 18.0 2.50 电池BATTERYME8117A SO-08 P -35 -17.3 2.50 电池BATTERYME9435 SO-08 P -30 -5.3 2.50 负荷开关load switchME9435A SO-08 P -30 -5.3 2.50 负荷开关load switchME9435AS SO-08 P -30 -5.3 2.00 负荷开关load switch ME9926 SO-08 Dual N 20 6.6 2.00 电池BATTERYME902ED DFN5X2 Dual N 20 9.8 3.10 电池BATTERYME2N60 D-PAK N 600 2.0 23.00 逆变器INVERTERME4N60 TO-220 N 600 4.0 33.00 逆变器INVERTERME10N03 D-PAK N 30 25.0 28.00 MBME10N03D D-PAK N 30 23.0 25.00 MBME10P03 D-PAK P -30 -13.6 17.80 逆变器INVERTERME12P04 D-PAK P -40 18.6 逆变器INVERTERME12N04 D-PAK N 40 22.0 逆变器INVERTERME15N06D4 TO252-4L Dual N 60 16.0 2.78 逆变器INVERTER ME15N10 D-PAK N 100 14.7 34.70 逆变器INVERTERME20N03 D-PAK N 30 39.0 37.00 MBME20P03 D-PAK P -30 -21.8 25.00 MBME20P06 D-PAK P -60 -17.7 39.10 MBME20P06P TO-251 P -60 -17.7 39.10 逆变器INVERTERME25N06 D-PAK N 60 16.0 25.00 逆变器INVERTERME35N06 D-PAK N 60 25.4 33.00 逆变器INVERTERME40N03 D-PAK N 30 43.0 39.00 MBME45N03T TO-220 N 30 58.0 75.00 逆变器INVERTERME45N10T TO-220 N 100 42.0 150.00 逆变器INVERTERME45N75 D-PAK N 75 35.5 59.50 逆变器INVERTERME45P04 D-PAK P -40 -30.0 3.13 逆变器INVERTERME50P06 D-PAK P -60 -61.0 114.00 逆变器INVERTERME50P06P TO-251 P -60 -61.0 114.00 逆变器INVERTERME60N03 D-PAK N 30 50.0 50.00 MBME60N03A D-PAK N 25 50.0 50.00 MBME60N03AS D-PAK N 25 53.0 40.00 MBME60N03S D-PAK N 30 50.0 3.10 MBME60N03G D-PAK N 30 43.0 35.00 MBME60N04 D-PAK N 40 39.0 29.00 逆变器INVERTERME50N75T TO-220 N 75 55.0 167.00 逆变器INVERTERME55N06 D-PAK N 60 64.0 63.00 逆变器INVERTERME60N04T TO-220 N 40 85.0 200.00 模具TOOLINGME70N03AG D-PAK N 25 66.0 42.00 MBME70N03AS D-PAK N 25 64.0 MBME70N03S D-PAK N 30 62.0 3.10 MBME70N06T TO-220 N 60 85.0 200.00 逆变器INVERTERME75N03 D-PAK N 30 71.0 42.00 模具TOOLINGME75N75T TO-220 N 75 93.0 200.00 模具TOOLINGME75N80CD D-PAK N 80 55.0 62.50 模具TOOLINGME75N80C TO-220 N 80 75.0 75.00 模具TOOLINGME80N06T TO-220 N 60 98.0 200.00 模具TOOLINGME80N75T TO-220 N 75 93 200 模具TOOLINGME80N08 TO-220 N 80 196 300 模具TOOLINGME80N08A TO-220 N 80 194 300 模具TOOLINGME85P03 D-PAK P -30 -80 83 负荷开关load switchME90N03 D-PAK N 30 74 42 负荷开关load switchME90P03 D-PAK P -30 -62 38 负荷开关load switchME90N03P TO-251 N 30 77 60 负荷开关load switchME95N03 D-PAK N 30 100 54.4 负荷开关load switchME95P03 D-PAK P -30 -68.2 41.7 负荷开关load switchME95N03T TO-220 N 30 88 75 模具TOOLINGME95N06T TO-220 N 55 106.6 200ME95N10T TO-220 N 110 124 300 模具TOOLINGMESS138 SOT-23 N 50 0.2 0.225 负荷开关load switchMESS138W SC-70-3L N 50 0.2 0.15 负荷开关load switchMESS84 SOT-23 P -50 0.13 0.225 负荷开关load switchMESS84W SC-70-3L P -50 0.13 0.225 负荷开关load switchME2N7002E SOT-23 N 60 0.3 0.35 负荷开关load switchME2N7002DW SC-70-3L N 60 0.115 0.2 负荷开关load switchME2N7002KW SC-70-6 Dual N 60 0.3 0.35 负荷开关load switchME2N7002W SC-70-3L N 60 0.2 0.2 负荷开关load switchME2N7002D SOT-23 N 60 0.3 负荷开关load switchME2N7002DKW SC-70-6 Dual N 60 0.115 0.225 负荷开关load switch。
1DescriptionThe AP5G06S uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 60V I D =4.8 AR DS(ON) < 32mΩ @ V GS =10V V DS = -60V I D =-3.7 A R DS(ON) < 70mΩ @ V GS =10VApplicationBattery protection Load switchUninterruptible power supplyAbsolute Maximum Ratings (T =25℃unless otherwise noted)9903942=3.3, =15V , V 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation133993=3.3,=-15V , V 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation1339904150N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-SourceFig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) v.s T J50.0010.010.110.000010.00010.0010.010.1110100t , Pulse Width (s)N o r m a l i z e d T h e r m a l R e s p o n s e (R θJ C )I ASV GSBV DSSV DD EAS=12L x I AS 2 x BV DSSBV DSS -V DD Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 56150P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-SourceFig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) v.s T J7Fig.8 Safe Operating Area Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform133493992533189Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate theperformance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned inaccordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.13352990394。