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A Product Line ofDiodes IncorporatedZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTORFeatures and Benefits• BV CEO > 20V•I C = 4.5A Continuous Collector Current•Low Saturation Voltage (150mV @ 1A)•R SAT = 47mΩ for a Low Equivalent On-Resistance•h FE specified up to 6A for high current gain hold up •Dual NPN saving footprint and component count•Low profile 0.8mm high package for thin applications •RθJA efficient, 40% lower than SOT26• 6mm2 footprint, 50% smaller than TSOP6 and SOT26 •Lead-Free, RoHS Compliant (Note 1)•Halogen and Antimony Free. “Green” Device (Note 2)•Qualified to AEC-Q101 Standards for High Reliability Mechanical Data• Case:DFN3020B-3•Case material: Molded Plastic. “Green” Molding Compound. •Terminals: Pre-Plated NiPdAu leadframe.•UL Flammability Rating 94V-0•Nominal package height: 0.8mm•Moisture Sensitivity: Level 1 per J-STD-020•Weight: 0.013 grams (approximate)Applications•DC-DC Converters• Chargingcircuits• Motorcontrol• Powerswitches• PortableapplicationsOrdering Information(Note 3)Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD618MCTA DBB 7 8 3,000 Notes: 1. No purposefully added lead.2. Diodes Inc’s “Green” Policy can be found on our website at 3. For Packaging Details, go to our website at .Marking InformationDBB = Product Type Marking CodeTop View, Dot Denotes Pin 1Equivalent CircuitTop View Bottom ViewDFN3020B-8NPN Transistor NPN TransistorB2C2C2C1C1E2B2E1B1C1C2Pin 1Bottom ViewPin OutDBBMaximum Ratings @T A = 25°C unless otherwise specifiedParameter Symbol Limit UnitCollector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 Emitter-Base Voltage V EBO 7 Peak Pulse Current I CM 12 AContinuous Collector Current (Notes 4 and 7) I C4.5 Continuous Collector Current (Notes 5 and 7) I C 5 Base Current I B 1Thermal Characteristics @ T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitPower DissipationLinear Derating Factor (Notes 4 & 7)P D1.512 W mW/°C (Notes 5 & 7)2.4519.6 (Notes 6 & 7)1.138 (Notes 6 & 8)1.713.6Thermal Resistance, Junction to Ambient (Notes 4 & 7) R θJA83.3 °C/W (Notes 5 & 7) 51.0(Notes 6 & 7) 111 (Notes 6 & 8) 73.5Thermal Resistance, Junction to Lead (Notes 7 & 9) R θJL 17.1 Operating and Storage Temperature Range T J , T STG-55 to +150 °C Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm 2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec.6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm 2) FR4 PCB with high coverage of single sided 1oz copper.7. For a dual device with one active die.8. For dual device with 2 active die running at equal power.9. Thermal resistance from junction to solder-point (at the end of the collector lead).Thermal CharacteristicsA Product Line ofDiodes IncorporatedZXTD618MCElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionCollector-Base Breakdown Voltage BV CBO 40 100 - V I C = 100µA Collector-Emitter Breakdown Voltage (Note 10) BV CEO 20 27 - V I C = 10mA Emitter-Base Breakdown Voltage BV EBO 7.0 8.2 - V I E = 100µA Collector Cutoff Current I CBO - - 100 nA V CB = 30V Emitter Cutoff Current I EBO - - 100 n A V EB = 6V Collector Emitter Cutoff Current I CES - - 100 nA V CES = 16VStatic Forward Current Transfer Ratio (Note 10) h FE200300200 100 400 450 360 180 - - - - - I C = 10mA, V CE = 2V I C = 200mA, V CE = 2V I C = 2A, V CE = 2V I C = 6A, V CE = 2VCollector-Emitter Saturation Voltage (Note 10) V CE(sat)- - - - - 8 90 115 190 210 15150135 250 300 mV I C = 0.1A, I B = 10mA I C = 1A, I B = 10mA I C = 2A, I B = 50mA I C = 3A, I B = 100mA I C = 4.5A, I B = 125mABase-Emitter Turn-On Voltage (Note 10) V BE(on) - 0.88 0.97 V I C = 4.5A, V CE = 2V Base-Emitter Saturation Voltage (Note 10) V BE(sat) - 0.98 1.07 V I C = 4.5A, I B = 125mA Output Capacitance C obo - 23 30 pF V CB = 10V. f = 1MHzTransition Frequency f T100 140 - MHz V CE = 10V, I C = 50mA,f = 100MHzTurn-on Time t on - 170 - ns V CC = 10V, I C = 3A I B1 = I B2 = 10mA Turn-off Time t off- 400 - ns Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%V CE(SAT) v I CI C Collector Current (A)V BE(SAT) v I CI C Collector Current (A)I C Collector Current (A)V CE(SAT) v I CV B E (S A T ) (V )I C Collector Current (A)V BE(ON) v I CI C Collector Current (A)T y p i c a l G a i n (h F E )Package Outline DimensionsSuggested Pad LayoutDFN3020B-8Dim Min Max Typ A 0.770.83 0.80 A1 0 0.05 0.02 A3 - - 0.15 b 0.250.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e - - 0.65 E 1.95 2.075 2.00 E2 0.430.63 0.53 L 0.250.35 0.30 Z - - 0.375 All Dimensions in mmDimensionsValue (in mm)C 0.650 G 0.285 G1 0.090 X 0.400 X11.120 Y0.730 Y1 0.500 Y20.365IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息: DIODESZXTD618MCTA。
General DescriptionThe MAX4364/MAX4365 are bridged audio power amplifiers intended for portable audio devices with internal speakers. The MAX4364 is capable of deliver-ing 1.4W from a single 5V supply and 500mW from a single 3V supply into an 8Ωload. The MAX4365 is capable of delivering 1W from a single 5V supply and 450mW from a single 3V supply into an 8Ωload. The MAX4364/MAX4365 feature 0.04% THD+N at 1kHz,68dB PSRR at 217Hz, and only 10nA of supply current in shutdown mode.The MAX4364/MAX4365 bridged outputs eliminate the need for output-coupling capacitors, minimizing exter-nal component count. The MAX4364/MAX4365 also include internal DC bias generation, clickless operation,short-circuit and thermal-overload protection. Both devices are unity-gain stable, with the gain set by two external resistors.The MAX4364 is available in a small 8-pin SO package.The MAX4365 is available in tiny 8-pin TDFN (3mm 3mm 0.8mm) and µMAX ®packages.ApplicationsCellular Phones PDAsTwo-Way Radios General-Purpose AudioFeatureso 1.4W into 8ΩLoad (MAX4364)o 1W into 8ΩLoad (MAX4365)o 0.04% THD+N at 1kHz o 68dB PSRR at 217Hzo 2.7V to 5.5V Single-Supply Operation o 5mA Supply Currento Low-Power, 10nA Shutdown Modeo Pin Compatible with the LM4861/LM4862/LM4864(MAX4364)o Clickless Power-Up and Shutdowno Thermal-Overload and Short-Circuit Protection o Available in TDFN, µMAX, and SO PackagesMAX4364/MAX43651.4W and 1W, Ultra-Small, Audio PowerAmplifiers with Shutdown________________________________________________________________Maxim Integrated Products 1Ordering Information19-2387; Rev 4; 5/11For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!atTypical Application Circuit/Functional DiagramPin Configurations appear at end of data sheet.+Denotes a lead(Pb)-free/RoHS-compliant package.µMAX is a registered trademark of Maxim Integrated Products, Inc.M A X 4364/M A X 43651.4W and 1W, Ultra-Small, Audio Power Amplifiers with ShutdownABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.V CC , OUT_ to GND...................................................-0.3V to +6V IN+, IN-, BIAS, SHDN to GND....................-0.3V to (V CC + 0.3V)Output Short Circuit (OUT+ to OUT-) (Note 1)...........Continuous Continuous Power Dissipation (T A = +70°C)8-Pin µMAX (derate 4.8mW/°C above +70°C)..............388mW 8-Pin TDFN (derate 24.4mW/°C above +70°C)..........1951mW 8-Pin SO (derate 7.8mW/°C above +70°C)...................623mW Junction Temperature......................................................+150°C Operating Temperature Range ...........................-40°C to +85°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10s).................................+300°C Soldering Temperature (reflow).......................................+260°CELECTRICAL CHARACTERISTICS—5VNote 1:Continuous power dissipation must also be observed.PACKAGE THERMAL CHARACTERISTICS (Note 2)Note 2:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to /thermal-tutorial .µMAXJunction-to-Ambient Thermal Resistance (θJA )......206.3°C/W Junction-to-Case Thermal Resistance (θJC )................42°C/W TDFNJunction-to-Ambient Thermal Resistance (θJA )...........41°C/W Junction-to-Case Thermal Resistance (θJC )..................8°C/WSOJunction-to-Ambient Thermal Resistance (θJA )......128.4°C/W Junction-to-Case Thermal Resistance (θJC )................36°C/WMAX4364/MAX43651.4W and 1W, Ultra-Small, Audio PowerAmplifiers with Shutdown_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS—3VNote 3:All specifications are 100% tested at T A = +25°C.Note 4:Quiescent power-supply current is specified and tested with no load on the outputs. Quiescent power-supply currentdepends on the offset voltage when a practical load is connected to the amplifier.Note 5:Guaranteed by design, not production tested.Note 6:Common-mode bias voltage is the voltage on BIAS and is nominally V CC /2.Note 7:Maximum differential-output offset voltage is tested in a unity-gain configuration. V OS = V OUT+- V OUT-.Note 8:Output power is specified by a combination of a functional output-current test, and characterization analysis.Note 9:Measurement bandwidth for THD+N is 22Hz to 22kHz.Note 10:Extended short-circuit conditions result in a pulsed output.ELECTRICAL CHARACTERISTICS—5V (continued)(V= 5V, R = ∞, C = 1µF to GND, V = V , T = +25°C, unless otherwise noted.) (Note 3)M A X 4364/M A X 43651.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown 4_______________________________________________________________________________________17001000525190200.010.11101000.00102500OUTPUT POWER (mW)T H D +N (%)V CC = 3V A V = 2V/V R L = 8Ω20kHz20Hz1kHzMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWER16501000520200400.010.11101000.00102450OUTPUT POWER (mW)T H D +N (%)V CC = 5V A V = 4V/V R L = 8Ω20Hz20kHz1kHzMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWER16501000520200400.010.11101000.00102450MAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWEROUTPUT POWER (mW)T H D +N (%)V CC = 5V A V = 2V/V R L = 8Ω20kHz1kHz20HzFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 3V A V = 20V/V R L = 8Ω0.25W0.4WMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYM A X 4364 t o c 05FREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 3V A V = 4V/V R L = 8Ω0.25W0.4WMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 3V A V = 2V/V R L = 8Ω0.25W0.4WMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 2V/V R L = 8Ω0.25W0.5W1WFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 4V/V R L = 8Ω0.25W0.5W1WMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 20V/V R L = 8Ω0.25W0.5W1WMAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYTypical Operating Characteristics(V CC = 5V, THD+N measurement bandwidth = 22Hz to 22kHz, T A = +25°C, unless otherwise noted.)MAX4364/MAX43651.4W and 1W, Ultra-Small, Audio PowerAmplifiers with Shutdown_______________________________________________________________________________________5Typical Operating Characteristics (continued)(V CC = 5V, THD+N measurement bandwidth = 22Hz to 22kHz, T A = +25°C, unless otherwise noted.)MAX4364SHUTDOWN SUPPLY CURRENTvs. SUPPLY VOLTAGEM A X 4364 t o c 18SUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (n A )4.84.13.424681202.7 5.510MAX4364SUPPLY CURRENT vs. TEMPERATUREM A X 4364 t o c 17TEMPERATURE (°C)S U P P L Y C U R R E N T (m A )3510-156789105-408560V CC = 5V MAX4364SUPPLY CURRENT vs. SUPPLY VOLTAGEM A X 4364 t o c 16SUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (m A )4.84.13.46.57.07.58.09.06.02.75.58.5MAX4364POWER DISSIPATION vs. OUTPUT POWEROUTPUT POWER (mW)P O W E R D I S S I P A T I O N (m W )300200100309021027030050040015060120240180MAX4364POWER DISSIPATION vs. OUTPUT POWEROUTPUT POWER (mW)P O W E R D I S S I P A T I O N (m W )90060030070210490630700015001200350140280560420MAX4364OUTPUT POWER vs. LOAD RESISTANCELOAD RESISTANCE (Ω)O U T P U T P O W E R (m W )30201020040080010001200005040600MAX4364OUTPUT POWER vs. LOAD RESISTANCELOAD RESISTANCE (Ω)O U T P U T P O W E R (m W )3020106001200180024003000005040MAX4364OUTPUT POWER vs. SUPPLY VOLTAGESUPPLY VOLTAGE (V)O U T P U T P O W E R (m W )4.84.13.4500100015002000250002.75.516501000520200400.010.11101000.00102440OUTPUT POWER (mW)T H D +N (%)MAX4364TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWERM A X 4364/M A X 43651.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown 6_______________________________________________________________________________________Typical Operating Characteristics (continued)(V CC = 5V, THD+N measurement bandwidth = 22Hz to 22kHz, T A = +25°C, unless otherwise noted.)OUTPUT POWER (mW)T H D +N (%)20001600130010007505000.010.11101000.0012400MAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWERMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k 0.11100.01010kMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 3V A V = 2V/V R L = 8Ω0.25W0.4WFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 20V/V R L = 8Ω0.25W0.5W0.75WMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYOUTPUT POWER (mW)T H D +N (%)20001600130010007005003002000.010.11101000.0012400MAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWERFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 3V A V = 20V/V R L = 8Ω0.25W0.4WMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 4V/V R L = 8Ω0.25W0.5W0.75WMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYMAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. FREQUENCYFREQUENCY (Hz)T H D +N (%)1001k0.11100.0110kV CC = 5V A V = 2V/V R L = 8Ω0.25W 0.5W0.75WMAX4364SHUTDOWN SUPPLY CURRENTvs. TEMPERATURETEMPERATURE (°C)S U P P L Y C U R R E N T (n A )3510-1520406080100-408560MAX4364/MAX43651.4W and 1W, Ultra-Small, Audio PowerAmplifiers with Shutdown_______________________________________________________________________________________7Typical Operating Characteristics (continued)(V CC = 5V, THD+N measurement bandwidth = 22Hz to 22kHz, T A = +25°C, unless otherwise noted.)MAX4365SUPPLY CURRENT vs. SUPPLY VOLTAGEM A X 4364 t o c 35SUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (m A )4.13.4456732.75.54.8MAX4365POWER DISSIPATION vs. OUTPUT POWEROUTPUT POWER (mW)P O W E R D I S S I P A T I O N (m W )300200100501001502002500500400MAX4365POWER DISSIPATION vs. OUTPUT POWEROUTPUT POWER (mW)P O W E R D I S S I P A T I O N (m W )90060030020040060080015001200MAX4365OUTPUT POWER vs. LOAD RESISTANCELOAD RESISTANCE (Ω)O U T P U T P O W E R (m W )3020104006008001000120005040200MAX4365OUTPUT POWER vs. LOAD RESISTANCELOAD RESISTANCE (Ω)O U T P U T P O W E R (m W )3020102004006008001000120005040MAX4365SUPPLY CURRENT vs. TEMPERATURETEMPERATURE (°C)S U P P L Y C U R R E N T (m A )3510-1545673-408560MAX4365OUTPUT POWER vs. SUPPLY VOLTAGESUPPLY VOLTAGE (V)O U T P U T P O W E R (m W )4.84.13.4500100015002000250002.75.5OUTPUT POWER (mW)T H D +N (%)7256005004003252502001250.010.11101000.00108501000MAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWEROUTPUT POWER (mW)T H D +N (%)7256005004003252502001250.010.11101000.00108001000MAX4365TOTAL HARMONIC DISTORTION PLUS NOISE vs. OUTPUT POWERM A X 4364/M A X 43651.4W and 1W, Ultra-Small, Audio Power Amplifiers with ShutdownTypical Operating Characteristics (continued)(V CC = 5V, THD+N measurement bandwidth = 22Hz to 22kHz, T A = +25°C, unless otherwise noted.)GAIN AND PHASE vs. FREQUENCYFREQUENCY (Hz)G A I N /P H A S E (d B /D E G R E E S )1M100k10k1k100-160-140-120-100-80-60-40-20020406080-1801010MPOWER-SUPPLY REJECTION RATIOvs. FREQUENCYFREQUENCY (Hz)P S R R (d B )10k1k 100-70-60-50-40-30-20-8010100kMAX4365SHUTDOWN SUPPLY CURRENTvs. TEMPERATURETEMPERATURE (°C)S U P P L Y C U R R E N T (n A )3510-152030104050607080-408560MAX4365SHUTDOWN SUPPLY CURRENTvs. SUPPLY VOLTAGEM A X 4364 t o c 37SUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (n A )4.84.13.424681202.75.510Detailed DescriptionThe MAX4364/MAX4365 bridged audio power ampli-fiers can deliver 1.4W into 8Ω(MAX4364) or 1W into 8Ω(MAX4365) while operating from a single 5V supply.These devices consist of two high-output-current op amps configured as a bridge-tied load (BTL) amplifier (see Typical Application Circuit/Functional Diagram ).The gain of the device is set by the closed-loop gain of the input op amp. The output of the first amplifier serves as the input to the second amplifier, which is configured as an inverting unity-gain follower in both devices. This results in two outputs, identical in magni-tude, but 180°out of phase.BIASThe MAX4364/MAX4365 feature an internally generated common-mode bias voltage of V CC /2 referenced to G ND. BIAS provides both click-and-pop suppression and the DC bias level for the audio signal. BIAS is inter-nally connected to the noninverting input of one amplifi-er, and should be connected to the noninverting input of the other amplifier for proper signal biasing (see Typical Application Circuit/Functional Diagram ).Choose the value of the bypass capacitor as described in the BIAS Capacitor section.ShutdownThe MAX4364/MAX4365 feature a 10nA, low-power shutdown mode that reduces quiescent current con-sumption. Pulling SHDN high disables the device’s bias circuitry, the amplifier outputs go high impedance, and BIAS is driven to GND. Connect SHDN to GND for nor-mal operation.Current LimitThe MAX4364/MAX4365 feature a current limit that pro-tects the device during output short circuit and over-load conditions. When both amplifier outputs are shorted to either V CC or GND, the short-circuit protec-tion is enabled and the amplifier enters a pulsing mode,reducing the average output current to a safe level. The amplifier remains in this mode until the overload or short-circuit condition is removed.Applications InformationBridge-Tied LoadThe MAX4364/MAX4365 are designed to drive a load differentially in a BTL configuration. The BTL configura-tion (Figure 1) offers advantages over the single-ended configuration, where one side of the load is connected to ground. Driving the load differentially doubles the output voltage compared to a single-ended amplifier under similar conditions. Thus, the differential gain ofthe device is twice the closed-loop gain of the input amplifier. The effective gain is given by:Substituting 2 V OUT(P-P)into the following equations yields four times the output power due to doubling of the output voltage.Since the differential outputs are biased at midsupply,there is no net DC voltage across the load. This elimi-nates the need for DC-blocking capacitors required for single-ended amplifiers. These capacitors can be large, expensive, consume board space, and degrade low-frequency performance.Power DissipationUnder normal operating conditions, the MAX4364/MAX4365 can dissipate a significant amount of power.The maximum power dissipation for each package is given in the Absolute Maximum Ratings section under Continuous Power Dissipation or can be calculated by the following equation:where T J(MAX)is +150°C, T A is the ambient temperature and θJA is the reciprocal of the derating factor in °C/W as specified in the Package Thermal Characteristics section. For example, θJA of the µMAX package is 206.3°C/W.A RR VD FIN=×2MAX4364/MAX43651.4W and 1W, Ultra-Small, Audio PowerAmplifiers with Shutdown_______________________________________________________________________________________9Figure 1. Bridge-Tied Load ConfigurationM A X 4364/M A X 4365The increase in power delivered by the BTL configura-tion directly results in an increase in internal power dis-sipation over the single-ended configuration. The maximum power dissipation for a given V CC and load is given by the following equation:If the power dissipation for a given application exceeds the maximum allowed for a given package, reduce V CC , increase load impedance, decrease the ambient temperature or add heat sinking to the device. Large output, supply, and ground PC board traces improve the maximum power dissipation in the package.Thermal-overload protection limits total power dissipa-tion in the MAX4364/MAX4365. When the junction tem-perature exceeds +160°C, the thermal protection circuitry disables the amplifier output stage. The ampli-fiers are enabled once the junction temperature cools by 15°C. This results in a pulsing output under continu-ous thermal overload conditions as the device heats and cools.The MAX4365 TDFN package features an exposed thermal pad on its underside. This pad lowers the ther-mal resistance of the package by providing a direct heat conduction path from the die to the PC board.Connect the exposed thermal pad to circuit ground by using a large pad, ground plane, or multiple vias to the ground plane.EfficiencyThe efficiency of the MAX4364/MAX4365 is calculated by taking the ratio of the power delivered to the load to the power consumed from the power supply. Output power is calculated by the following equations:where V PEAK is half the peak-to-peak output voltage. In BTL amplifiers, the supply current waveform is a full-wave rectified sinusoid with the magnitude proportional to the peak output voltage and load. Calculate the sup-ply current and power drawn from the power supply by the following:The efficiency of the MAX4364/MAX4365 is:The device efficiency values in Table 1 are calculated based on the previous equation and do include the effects of quiescent current. Note that efficiency is low at low output-power levels, but remains relatively con-stant at normal operating, output-power levels.Component SelectionGain-Setting ResistorsExternal feedback components set the gain of both devices. Resistors R F and R IN (see Typical Application Circuit/Functional Diagram ) set the gain of the amplifier as follows:Optimum output offset is achieved when R F = 20k Ω.Vary the gain by changing the value of R IN . When using the MAX4364/MAX4365 in a high-gain configuration (greater than 8V/V), a feedback capacitor may be required to maintain stability (see Figure 2). C F and R F limit the bandwidth of the device, preventing high-fre-quency oscillations. Ensure that the pole created by C F and R F is not within the frequency band of interest.Input FilterThe input capacitor (C IN ), in conjunction with R IN forms a highpass filter that removes the DC bias from an incoming signal. The AC-coupling capacitor allows the amplifier to bias the signal to an optimum DC level.Assuming zero source impedance, the -3dB point of the highpass filter is given by:Choose R IN according to the G ain-Setting Resistors section. Choose C IN such that f -3dB is well below the lowest frequency of interest. Setting f -3dB too high affects the low-frequency response of the amplifier. Use capacitors whose dielectrics have low-voltage coeffi-1.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown 10______________________________________________________________________________________cients, such as tantalum or aluminum electrolytic.Capacitors with high-voltage coefficients, such as ceramics, may result in an increase distortion at low frequencies.Other considerations when designing the input filter include the constraints of the overall system, the actual frequency band of interest and click-and-pop suppres-sion. Although high-fidelity audio calls for a flat gain response between 20Hz and 20kHz, portable voice-reproduction devices such as cellular phones and two-way radios need only concentrate on the frequency range of the spoken human voice (typically 300Hz to3.5kHz). In addition, speakers used in portable devices typically have a poor response below 150Hz. Taking these two factors into consideration, the input filter may not need to be designed for a 20Hz to 20kHz response,saving both board space and cost due to the use of smaller capacitors.BIAS CapacitorThe BIAS bypass capacitor, C BIAS , improves PSRR and THD+N by reducing power-supply noise at the common-mode bias node, and serves as the primary click-and-pop suppression mechanism. C BIAS is fed from an internal 25k Ωsource, and controls the rate at which the common-mode bias voltage rises at startup and falls during shutdown. For optimum click-and-pop suppres-sion, ensure that the input capacitor (C IN ) is fully charged (ten time constants) before C BIAS . The value of C BIAS for best click-and-pop suppression is given by:In addition, a larger C BIAS value yields higher PSRR.MAX4364/MAX4365Amplifiers with Shutdown______________________________________________________________________________________11Figure 2. High-Gain ConfigurationM A X 4364/M A X 4365Clickless/Popless OperationProper selection of AC-coupling capacitors (C IN ) and C BIAS achieves clickless/popless shutdown and startup.The value of C BIAS determines the rate at which the midrail bias voltage rises on startup and falls when enter-ing shutdown. The size of the input capacitor also affects clickless/popless operation. On startup, C IN is charged to its quiescent DC voltage through the feedback resistor (R F ) from the output. This current creates a voltage tran-sient at the amplifier’s output, which can result in an audible pop. Minimizing the size of C IN reduces this effect, optimizing click-and-pop suppression.Supply BypassingProper supply bypassing ensures low-noise, low-distor-tion performance. Place a 0.1µF ceramic capacitor in parallel with a 10µF ceramic capacitor from V CC to G ND. Locate the bypass capacitors as close to the device as possible.Adding Volume ControlThe addition of a digital potentiometer provides simple volume control.Figure 3 shows the MAX4364/MAX4365with the MAX5407 log taper digital potentiometer used as an input attenuator. Connect the high terminal of the MAX5407 to the audio input, the low terminal to ground and the wiper to C IN . Setting the wiper to the top posi-tion passes the audio signal unattenuated. Setting the wiper to the lowest position fully attenuates the input.Layout ConsiderationsG ood layout improves performance by decreasing the amount of stray capacitance and noise at the amplifier’s inputs and outputs. Decrease stray capacitance by min-imizing PC board trace lengths, using surface-mount components and placing external components as close to the device as possible. Also refer to the Power Dissipation section for heatsinking considerations.Amplifiers with Shutdown 12______________________________________________________________________________________Figure 3. MAX4364/MAX4365 and MAX5160 Volume Control CircuitChip InformationPROCESS: BiCMOSPin ConfigurationsMAX4364/MAX4365Amplifiers with Shutdown______________________________________________________________________________________13Package InformationFor the latest package outline information and land patterns (footprints), go to /packages . Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing per-tains to the package regardless of RoHS status.M A X 4364/M A X 4365Amplifiers with Shutdown Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.14____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600©2011 Maxim Integrated ProductsMaxim is a registered trademark of Maxim Integrated Products, Inc.Revision History。
Optocoupler, Phototransistor Output, High Reliability,5000 V RMS , 110 °C RatedDESCRIPTIONThe 110 °C rated VO618A feature a high current transferratio, low coupling capacitance and high isolation voltage.These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.The coupling devices are designed for signal transmission between two electrically separated circuits.The couplers are end-stackable with 2.54 mm spacing.Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V RMS or DC. Specifications subject to change.FEATURES•Operating temperature from - 55 °C to + 110 °C •Good CTR linearity depending on forward current•Isolation test voltage, 5000 V RMS•High collector emitter voltage, V CEO = 80 V •Low saturation voltage •Fast switching times •Low CTR degradation •Temperature stable•Low coupling capacitance•End stackable, 0.100" (2.54 mm) spacing •High common mode interference immunity•Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/ECNote**Please see document “Vishay Material Category Policy”:/doc?99902APPLICATIONS•ACadapter •SMPS •PLC•Factory automation •Game consolesAGENCY APPROVALS•UL1577, file no. E52744•cUL tested to CSA 22.2 bulletin 5A•DIN E N 60747-5-2 (VDE 0884)/DIN E N 60747-5-5(pending), available with option 1•BSI IEC 60950; IEC 60065•FIMKONote•Additional options may be possible, please contact sales office.DIP-4 th_01Notes•Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. E xposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).Note•Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLVALUE UNIT INPUTReverse voltage V R 6V Forward current I F60mA Forward surge current t p ≤ 10 μs I FSM 2.5A LED power dissipation at 25 °CP diss 70mW OUTPUTCollector emitter voltage V CEO 80V Emitter collector voltage V ECO 7V Collector current I C50mA Collector peak current t p /T = 0.5, t p ≤ 10 msI CM 100mA Ouput power dissipation at 25 °C P diss 150mW COUPLERIsolation test voltage (RMS)t = 1 sV ISO 5000V RMS Operation temperature T amb - 55 to + 110°C Storage temperature range T stg- 55 to + 150°C Soldering temperature (1)2 mm from case, ≤ 10 sT sld260°CELECTRICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLMIN.TYP.MAX.UNITINPUTForward voltage I F = 5 mA V F 11.15 1.65V Reverse current V R = 6 V I R 0.0110μA Junction capacitance V R = 0 V, f = 1 MHzC j13pFOUTPUTCollector emitter leakage current V CE = 10 V I CEO 10200nA Collector emitter capacitance V CE = 5 V, f = 1 MHzC CE 5.2pF Collector emitter breakdown voltage I C = 1 mA BV CEO 80V Emitter collector breakdown voltage I E = 100 μABV ECO7VCOUPLERCollector emitter saturation voltage I F = 1 mA, I C = 2.5 mAV CEsat 0.250.4V Coupling capacitancef = 1 MHzC C0.4pFCURRENT TRANSFER RATIO (T amb = 25 °C, unless otherwise specified)PARAMETERTEST CONDITIONPART SYMBOL MIN.TYP.MAX.UNIT I C /I FI F = 1 mA, V CE = 5 VVO618ACTR 50600%VO618A-2CTR 63125%VO618A-3CTR 100200%VO618A-4CTR160320%Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated OperationSWITCHING CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONCTR BINSYMBOL MIN.TYP.MAX.UNIT NON-SATURATED Rise and fall time I F = 1 mA, V CC = 5 V, R L = 75 Ωt r , t f 2μs Turn-on time I F = 1 mA, V CC = 5 V, R L = 75 Ωt on 3μs Turn-off time t off 2.3μs Cut-off frequency I F = 1 mA, V CC = 5 V, R L = 75 Ωf ctr100kHz SATURATEDTurn-on timeI F = 2 mA1t on3μs I F = 1 mA 2t on 4.2μs 3t on 4.2μs I F = 0.5 mA 4t on 6μs Rise timeI F = 2 mA1t r 2μs I F = 1 mA 2t r 3μs 3t r 3μs I F = 0.5 mA4t r 4.6μs SATURATEDTurn-off timeI F = 2 mA1t off 18μs I F = 1 mA 2t off 23μs 3t off 23μs I F = 0.5 mA 4t off 25μs Fall timeI F = 2 mA1tf 11μs I F = 1 mA 2t f 14μs 3t f 14μs I F = 0.5 mA4t f15μsFig. 3 - Switching TimesNote•As per IEC 60747-5-5, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits.TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 4 - Forward Voltage vs. Forward Current Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat)SAFETY AND INSULATION RATINGSPARAMETERTEST CONDITIONSYMBOL MIN.TYP.MAX.UNIT Insulation resistanceV IO = 500 VR IO 1012ΩV IO = 500 V, T amb = 100 °C R IO 1011ΩV IO = 500 V, T amb = 150 °C (construction test only)R IO 109ΩRated impulse voltage V IOTM 8kV Maximum working voltages Recurring peak voltageV IORM 890V Forward current I SI 130mA Power dissipation P SO 265mW Safety temperature T SI150°C Creepage distance 8.0mm Isolation distance0.4mmFig. 6 - Leakage Current vs. Ambient Temperature Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature Fig. 8 - Normalized CTR (sat) vs. Ambient TemperatureFig. 9 - CTR Frequency vs. Phase AngleFig. 10 - CTR Frequency vs. Collector CurrentPACKAGE DIMENSIONS in millimetersPACKAGE MARKINGNotes•The VDE logo is only marked on option 1 parts. Option information is not marked on the part.•Tape and reel suffix (T) is not part of the package marking.Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.。
数字继保61850参数设置说明书A.继保之星系列试验仪介绍（继保之星-6000C的主要特点）•16对光收发器，提供针对IEC61850标准规范中各种通信信息的有效编解码。
（61850-9-1，61850-9-2，GOOSE信息）•12个发送器和两个接收器，提供针对IEC60044-7/8的FT3格式的采样值报文•完整解析保护模型文件，实现电流电压通道选择、比例系数、ASDU数目、采样率、GOOSE信息等的配置，可灵活方便地与各种型号保护接口•10对开入量，8对通用开出量，实现保护的完整闭环测试•GOOSE信息报文,能够模拟丢帧和乱码•内置GPS，可进行远距离同步输出•10.4寸大屏显示•内置工控机•IRIGB对时或IEEE1588对时•24路数字采样值输出，每路均可独立配置电压和电流以及频率•12路小信号输出，每路均可独立配置电压或电流•波形显示•数字录波B.数字继保模块设置说明该模块是专门用来对9-1，9-2，9-1扩展，FT3，FT3扩展，小信号，订阅GOOSE，发布GOOSE中电流电压通道选择，ASDU数目，采样点数等信息进行设置的。
(一)9-1配置：在试验程序（比如交流试验等）主界面工具条中，点击61850网络设置按钮就可以启动该模块了，下图所示中红色圆圈指出的地方。
然后，通过界面下方的选择框可以选择9-1/9-2/9-1扩展/FT3/FT3扩展/小信号/订阅GOOSE/发布GOOSE设置窗口，如下图所示为9-1设置界面：注明：白色编辑框显示列表一，列表二和列表三（下同）➢界面说明：●ASDU数目：每帧报文中包含的采样点数目，最大为10●采样点数/20ms：20ms时间中采样点数目，最大为255●系数设置：启动后用来设置一次/二次额定值，比例系数和小信号输出等（见9-2设置）●通道设置：用来设置输出通道（列表一）●目的MAC地址：表示目的MAC地址●TPID：标识号（默认为8100，不能修改）●TCI：标识（通过设置优先级，CFI和VLanID进行修改）●APPID：装置标识ID（列表二）●LNName：逻辑节点名称●DataSetName：数据集名称●LDName：逻辑设备名称●延迟时间：设置额定延迟时间●版本号：配置版本号●状态字1/2：设置状态字1和状态字2●通道名称：设置输出通道的名称（列表三）●通道映射：用来设置映射通道➢操作说明：●鼠标左键点击[列表一]中某行[输出]列，[列表二][列表三]将同步显示对应的相关信息。
MAXQ618 16-Bit Microcontroller with Infrared ModuleTABLE OF CONTENTSGeneral Description (1)Applications (1)Features (1)Block Diagram (1)Absolute Maximum Ratings (4)Recommended Operating Conditions (4)SPI Electrical Characteristics (6)Pin Configuration (8)Pin Description (8)Detailed Description (11)Microprocessor (11)Memory (12)Stack Memory (12)Utility ROM (12)Watchdog Timer (12)IR Carrier Generation and Modulation Timer (13)Carrier Generation Module (13)IR Transmission (13)IR Transmit—Independent External Carrier and Modulator Outputs (15)IR Receive (16)Carrier Burst-Count Mode (16)16-Bit Timers/Counters (17)USART (18)Serial Peripheral Interface (SPI) (18)General-Purpose I/O (19)On-Chip Oscillator (19)Operating Modes (20)Power-Fail Detection (20)Applications Information (24)Grounds and Bypassing (24)Additional Documentation (24)Deviations from the MAXQ610 User’s Guide for the MAXQ618 (25)Development and Technical Support (25)Ordering Information/Selector Guide (25)Package Information (25)Revision History (26)2芯天下--/MAXQ618 16-Bit Microcontroller with Infrared ModuleLIST OF FIGURESFigure 1. IR Transmit Frequency Shifting Example (IRCFME = 0) (14)Figure 2. IR Transmit Carrier Generation and Carrier Modulator Control (14)Figure 3. IR Transmission Waveform (IRCFME = 0) (15)Figure 4. External IRTXM (Modulator) Output (15)Figure 5. IR Capture (16)Figure 6. Receive Burst-Count Example (17)Figure 7. SPI Master Communication Timing (18)Figure 8. SPI Slave Communication Timing (19)Figure 9. On-Chip Oscillator (19)Figure 10. Power-Fail Detection During Normal Operation (20)Figure 11. Stop Mode Power-Fail Detection States with Power-Fail Monitor Enabled (22)Figure 12. Stop Mode Power-Fail Detection with Power-Fail Monitor Disabled (23)LIST OF TABLESTable 1. Watchdog Interrupt Timeout (Sysclk = 12MHz, CD[1:0] = 00) (12)Table 2. USART Mode Details (18)Table 3. Power-Fail Detection States During Normal Operation (21)Table 4. Stop Mode Power-Fail Detection States with Power-Fail Monitor Enabled (22)Table 5. Stop Mode Power-Fail Detection States with Power-Fail Monitor Disabled (23)3芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module4(All voltages with respect to GND.)Voltage Range on V DD .........................................-0.3V to +3.6V Voltage Range on Any Lead Except V DD -0.3V to (V DD + 0.5V)Continuous Power Dissipation (T A = +70N C) TQFN (single-layer board)(derate 27mW/N C above +70N C) .........................2162.2mWTQFN (multilayer board)(derate 37mW/N C above +70N C) ............................2963mW Operating Temperature Range .............................0N C to +70N C Storage Temperature Range ............................-65N C to +150N C Lead Temperature (excluding dice; soldering, 10s) ......+300N C Soldering Temperature (reflow) ......................................+260N CABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.RECOMMENDED OPERATING CONDITIONS(V DD = V RST to 3.6V, T A = 0N C to +70N C, unless otherwise noted.) (Note 1)PARAMETERSYMBOL CONDITIONSMIN TYP MAX UNITS Supply Voltage V DD V RST 3.6V 1.8V Internal Regulator V REG18 1.62 1.8 1.98V Power-Fail Warning Voltage for SupplyV PFW Monitors V DD (Note 2) 1.75 1.8 1.85V Power-Fail Reset Voltage V RST Monitors V DD (Note 3) 1.64 1.671.70V POR VoltageV POR Monitors V DD 1.0 1.42V RAM Data-Retention Voltage V DRV (Note 4)1.0V Active CurrentI DD_1Sysclk = 12MHz (Note 5) 2.5 3.75mAStop-Mode CurrentI S1Power-Fail OffT A = +25N C 0.15 2.0F AT A = 0°C +70N C 0.158I S2Power-Fail On T A = +25N C 2231T A = 0°C to +70N C 27.638Current Consumption During Power-FailI PFR (Note 6)[(3 x I S2) + ((PCI - 3) x (I S1 + I NANO ))]/PCIF A Power Consumption During PORI POR (Note 7)100nA Stop-Mode Resume Time t ON 375 + (8192 x t HFXIN)F s Power-Fail Monitor Startup Time t PFM_ON (Note 4)150F s Power-Fail Warning Detection Timet PFW (Notes 4, 8)10F s Input Low Voltage for IRTX, IRRX, RESET , and All Port Pins V IL V GND 0.3 x V DD V Input High Voltage for IRTX, IRRX, RESET , and All Port Pins V IH 0.7 x V DDV DDV Input Hysteresis (Schmitt)V IHYS V DD = 3.3V, T A = +25N C300mV Input Low Voltage for HFXIN V IL_HFXIN V GND 0.3 x V DD V Input High Voltage for HFXIN V IH_HFXIN 0.7 x V DDV DD V IRRX Input Filter Pulse-Width Rejectt IRRX_R50ns 芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module5RECOMMENDED OPERATING CONDITIONS (continued)(V DD = V RST to 3.6V, T A = 0N C to +70N C, unless otherwise noted.) (Note 1)PARAMETERSYMBOL CONDITIONSMIN TYPMAXUNITS IRRX Input Filter Pulse-Width Acceptt IRRX_A300nsOutput Low Voltage for IRTXV OL_IRTXV DD = 3.6V, I OL = 25mA (Note 4)1.0VV DD = 2.35V, I OL = 10mA (Note 4) 1.0V DD = 1.85V, I OL = 4.5mA1.0Output Low Voltage for RESET and All Port Pins (Note 9)V OLV DD = 3.6V, I OL = 11mA (Note 4)0.40.5V V DD = 2.35V, I OL = 8mA (Note 4)0.40.5V DD = 1.85V, I OL = 4.5mA0.40.5Output High Voltage for IRTX and All Port PinsV OH I OH = -2mA V DD - 0.5V DD V Input/Output Pin Capacitance for All Port Pins C IO (Note 4)15pF Input Leakage Current I L Internal pullup disabled -100+100nA Input Pullup Resistor forRESET , IRTX, IRRX, P0, P1, P2R PUV DD = 3.0V, V OL = 0.4V (Note 4)162839k W V DD = 2.0V, V OL = 0.4V173041EXTERNAL CRYSTAL/RESONATORCrystal/Resonator f HFXIN DC12MHz Crystal/Resonator Period t HFXIN 1/f HFXINns Crystal/Resonator Warmup Timet XTAL_RDY From initial oscillation 8192 x t HFXIN ms Oscillator Feedback Resistor R OSCF(Note 4)0.51.01.5M WEXTERNAL CLOCK INPUT External Clock Frequency f XCLK DC12MHz External Clock Period t XCLK1/f XCLKns External Clock Duty Cycle t XCLK_DUTY (Note 4)4555%System Clock Frequency f CK f HFXIN MHz HFXOUT = GNDf XCLK System Clock Period t CK1/f CKnsNANOPOWER RINGNanopower Ring Frequency f NANO T A = +25N C3.08.020.0kHz T A = +25N C, V DD = POR voltage (Note 4) 1.7 2.4Nanopower Ring Duty Cycle t NANO (Note 4)4060%Nanopower Ring Current I NANOTypical at V DD = 1.64V,T A = +25°C (Note 4)40400nAFLASH MEMORYSystem Clock During Flash Programming/Erasef FPSYSCLK6MHz芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module6SPI ELECTRICAL CHARACTERISTICS(V DD = V RST to 3.6V, T A = 0N C to +70N C, unless otherwise noted.) (Note 11)RECOMMENDED OPERATING CONDITIONS (continued)(V DD = V RST to 3.6V, T A = 0N C to +70N C, unless otherwise noted.) (Note 1)PARAMETERSYMBOL CONDITIONSMINTYPMAX UNITS SPI Master Operating Frequency 1/t MCK f CK /2MHz SPI Slave Operating Frequency 1/t SCK f CK /4MHz SPI I/O Rise/Fall Timet SPI_RF C L = 15pF, pullup = 560W8.323.6ns SCLK Output Pulse-Width High/Lowt MCH , t MCL t MCK /2 - t SPI_RF ns MOSI Output Hold Time After SCLK Sample Edget MOH t MCK /2 - t SPI_RF ns MOSI Output Valid to Sample Edge t MOV t MCK /2 - t SPI_RF ns MISO Input Valid to SCLK Sample Edge Rise/Fall Setupt MIS 25ns MISO Input to SCLK Sample Edge Rise/Fall Holdt MIH 0ns SCLK Inactive to MOSI Inactive t MLH t MCK /2 - t SPI_RFns SCLK Input Pulse-Width High/Low t SCH , t SCLt SCK /2ns SSEL Active to First Shift Edge t SSE t SPI_RF ns MOSI Input to SCLK Sample Edge Rise/Fall Setupt SIS t SPI_RF ns MOSI Input from SCLK Sample Edge Transition Holdt SIH t SPI_RFns MISO Output Valid After SCLK Shift Edge Transitiont SOV2t SPI_RFnsPARAMETERSYMBOL CONDITIONSMIN TYPMAX UNITS Flash Erase Timet ME Mass erase 2040ms t ERASE Page erase 2040Flash Programming Time per Wordt PROG(Note 10)20100F s Write/Erase Cycles 20,000Cycles Data Retention T A = +25N C100YearsWAKE-UP TIMER Wake-Up Timer Interval t WAKEUP1/f NANO65,535/f NANOsIRCarrier Frequencyf IR(Note 4)f CK /2Hz芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module7Note 1: Specifications to 0N C are guaranteed by design and are not production tested. Typical = +25N C, V DD = +3.3V, unless oth-erwise noted.Note 2: V PFW can be programmed to the following nominal voltage trip points: 1.8V, 1.9V, 2.55V, and 2.75V ±3%. The valueslisted in the Recommended Operating Conditions table are for the default configuration of 1.8V typical.Note 3: The power-fail reset and POR detectors are designed to operate in tandem to ensure that one or both of these signalsis active at all times when V DD < V RST , ensuring the device maintains the reset state until minimum operating voltage is achieved.Note 4: Guaranteed by design and not production tested.Note 5: Measured on the V DD pin and the device not in reset. All inputs are connected to GND or V DD . Outputs do not source/sink any current. The device is executing code from flash memory.Note 6: The power-check interval (PCI) can be set to always on, or to 1024, 2048, or 4096 nanopower ring clock cycles.Note 7: Current consumption during POR when powering up while V DD is less than the POR release voltage.Note 8: The minimum amount of time that V DD must be below V PFW before a power-fail event is detected; refer to the MAXQ610User’s Guide for details.Note 9: The maximum total current, I OH(MAX) and I OL(MAX), for all listed outputs combined should not exceed 32mA to satisfy themaximum specified voltage drop. This does not include the IRTX output.Note 10: Programming time does not include overhead associated with utility ROM interface.Note 11: AC electrical specifications are guaranteed by design and are not production tested.SPI ELECTRICAL CHARACTERISTICS (continued)(V DD = V RST to 3.6V, T A = 0N C to +70N C, unless otherwise noted.) (Note 11)PARAMETERSYMBOL CONDITIONSMIN TYPMAXUNITS SSEL Inactivet SSH t CK +t SPI_RF ns SCLK Inactive to SSEL Rising t SD t SPI_RFns MISO Output Disabled After SSEL Edge Riset SLH2t CK + 2t SPI_RFns芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module8Pin ConfigurationPin DescriptionPINNAMEFUNCTIONBARE DIETQFN-EPPOWER PINS1413V DD Supply Voltage1615GND Ground. Connect directly to the ground plane.27, 4328, 41GNDGround. For low-current applications (< 10mA of GPIO current, exclusive of IRTX sink current), these pins can be left unconnected. If used, they should be connected directly to the ground plane.1514REGOUT1.8V Regulator Output. This pin must be connected to ground through a 1.0F F external ceramic-chip capacitor. The capacitor must be placed as close to this pin as possible. No devices other than the capacitor should be connected to this pin.芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module9Pin Description (continued)PINNAMEFUNCTIONBARE DIETQFN-EPRESET PINS1312RESETDigital, Active-Low Reset Input/Output. The device remains in reset as long as this pin is low and begins executing from the utility ROM at address 8000h when this pin returns to a high state. The pin includes pullup current source; if this pin is driven by an external device, it should be driven by an open-drain source capable of sinking in excess of 4mA. This pin can be left unconnected if there is no need to place the device in a reset state using an external signal. This pin is driven low as an output when an internal reset condition occurs.CLOCK PINS1716HFXIN High-Frequency Crystal Input. Connect an external crystal or resonator between HFXIN and HFXOUT for use as the high-frequency system clock. Alternatively, HFXIN is the input for an external, high-frequency clock source when HFXOUT is connected to ground.1817HFXOUTIR FUNCTION PINS4442IRTXIR Transmit Output. IR transmission pin capable of sinking 25mA. This pin defaults to a high-impedance input with the weak pullup disabled during all forms of reset.Software must configure this pin after release from reset to remove the high-impedance input condition.4543IRRXIR Receive Input. This pin defaults to a high-impedance input with the weak pullup disabled during all forms of reset. Software must configure this pin after release from reset to remove the high-impedance input condition.GENERAL-PURPOSE I/O AND SPECIAL FUNCTION PINSPort 0 General-Purpose, Digital I/O Pins. These port pins function as general-purpose I/O pins with their input and output states controlled by the PD0, PO0, and PI0 registers. All port pins default to high-impedance mode after a reset. Software must configure these pins after release from reset to remove the high-impedance condition. All special functions must be enabled from software before they can be used.GPIO PORT PINSPECIAL FUNCTION 144P0.0/IRTXM P0.0IR Modulator Output 21P0.1/RX0P0.1USART 0 Receive 32P0.2/TX0P0.2USART 0 Transmit 43P0.3/RX1P0.3USART 1 Receive 54P0.4/TX1P0.4USART 1 Transmit 65P0.5/TBA0/TBA1P0.5Type B Timer 0 Pin A or Type B Timer 1 Pin A 76P0.6/TBB0P0.6Type B Timer 0 Pin B 87P0.7/TBB1P0.7Type B Timer 1 Pin B芯天下--/MAXQ61816-Bit Microcontroller with Infrared Module10Pin Description (continued)PINNAMEFUNCTIONBARE DIE TQFN-EPPort 1 General-Purpose, Digital I/O Pins with Interrupt Capability. These port pinsfunction as general-purpose I/O pins with their input and output states controlled by the PD1, PO1, and PI1 registers. All port pins default to high-impedance mode after a reset. Software must configure these pins after release from reset to remove the high-impedance condition. All external interrupts must be enabled from software before they can be used.GPIO PORT PINEXTERNAL INTERRUPT3333P1.0/INT0P1.0INT03534P1.1/INT1P1.1INT13635P1.2/INT2P1.2INT23836P1.3/INT3P1.3INT33937P1.4/INT4P1.4INT44038P1.5/INT5P1.5INT54139P1.6/INT6P1.6INT64240P1.7/INT7P1.7INT7Port 2 General-Purpose, Digital I/O Pins. These port pins function as general-purpose I/O pins with their input and output states controlled by the PD2, PO2, and PI2 registers. All port pins default to high-impedance mode after a reset. Software must configure these pins after release from reset to remove the high-impedance condition. All special functions must be enabled from software before they can be used.GPIO PORT PINSPECIAL FUNCTION 98P2.0/MOSI P2.0SPI: Master Out-Slave In 109P2.1/MISO P2.1SPI: Master In-Slave Out1110P2.2/SCLK P2.2SPI: Slave Clock1211P2.3/SSEL P2.3SPI: Active-Low Slave Select2829P2.4/TCK P2.4JTAG: Test Clock 2930P2.5/TDI P2.5JTAG: Test Data In 3031P2.6/TMS P2.6JTAG: Test Mode Select 3132P2.7/TDOP2.7JTAG: Test Data OutPort 3 General-Purpose, Digital I/O Pins with Interrupt Capability. These port pins function as general-purpose I/O pins with their input and output states controlled by the PD3, PO3, and PI3 registers. All port pins default to high-impedance mode after a reset. Software must configure these pins after release from reset to remove the high-impedance condition. All external interrupts must be enabled from software before they can be used.GPIO PORT PINEXTERNAL INTERRUPT1918P3.0/INT8P3.0INT82019P3.1/INT9P3.1INT92120P3.2/INT10P3.2INT102221P3.3/INT11P3.3INT112322P3.4/INT12P3.4INT122423P3.5/INT13P3.5INT132524P3.6/INT14P3.6INT142625P3.7/INT15P3.7INT15芯天下--/16-Bit Microcontroller with Infrared ModulePin Description (continued)Detailed Description The MAXQ618 provides integrated, low-cost solutions that simplify the design of IR communications equipment such as universal remote controls. Standard features include the highly optimized, single-cycle, MAXQ, 16-bit RISC core; 80KB flash memory; 2KB data RAM; soft stack; 16 general-purpose registers; and three data pointers. The MAXQ core has the industry’s best MIPS/ mA rating, allowing developers to achieve the same per-formance as competing microcontrollers at substantially lower clock rates. Lower active-mode current combined with the even lower MAXQ618 stop-mode current (0.2F A typ) results in increased battery life. Application-specific peripherals include flexible timers for generating IR car-rier frequencies and modulation. A high-current IR drive pin capable of sinking up to 25mA current and output pins capable of sinking up to 5mA are ideal for IR appli-cations. It also includes general-purpose I/O pins ideal for keypad matrix input, and a power-fail-detection circuit to notify the application when the supply voltage is near-ing the microcontroller’s minimum operating voltage.At the heart of the device is the MAXQ 16-bit, RISC core. Operating from DC to 12MHz, almost all instructions exe-cute in a single clock cycle (83.3ns at 12MHz), enabling nearly 12MIPS true-code operation. When active device operation is not required, an ultra-low-power stop mode can be invoked from software, resulting in quiescent current consumption of less than 0.2F A (typ) and 2.0F A (max). The combination of high-performance instructions and ultra-low stop-mode current increases battery life over competing microcontrollers. An integrated POR cir-cuit with brownout support resets the device to a known condition following a power-up cycle or brownout condi-tion. Additionally, a power-fail warning flag is set, and a power-fail interrupt can be generated when the system voltage falls below the power-fail warning voltage, V PFW. The power-fail warning feature allows the application to notify the user that the system supply is low and appro-priate action should be taken.Microprocessor The device is based on Maxim’s low-power, 16-bit MAXQ20S family of RISC cores. The core supports the Harvard memory architecture with separate 16-bit pro-gram and data address buses. A fixed 16-bit instruction word is standard, but data can be arranged in 8 or 16 bits. The MAXQ core in the device is implemented as a pipelined processor with performance approaching 1MIPS per MHz. The 16-bit data path is implemented around register modules, and each register module con-tributes specific functions to the core. The accumulator module consists of sixteen 16-bit registers and is tightly coupled with the arithmetic logic unit (ALU). A configu-rable soft stack supports program flow.E xecution of instructions is triggered by data trans-fer between functional register modules or between a functional register module and memory. Because data movement involves only source and destination modules, circuit switching activities are limited to active modules only. For power-conscious applications, this approach localizes power dissipation and minimizes switching noise. The modular architecture also provides a maxi-mum of flexibility and reusability that are important for a microprocessor used in embedded applications.The MAXQ instruction set is highly orthogonal. All arith-metical and logical operations can use any register in conjunction with the accumulator. Data movement is sup-ported from any register to any other register. Memory is accessed through specific data-pointer registers with autoincrement/decrement support.PINNAME FUNCTION BARE DIE TQFN-EPNO CONNECTION PINS32, 34, 37—DNC Do Not Connect. Do not bond out for normal operation.—26, 27N.C.No Connection. Not internally connected.EXPOSED PAD——EP Exposed Pad. For low-current applications (< 10mA of GPIO current, exclusive of IRTX sink current), these pins can be left unconnected. If used, they should be connected directly to the ground plane.16-Bit Microcontroller with Infrared ModuleMemoryThe microcontroller incorporates several memory types:• 80KB flash memory• 2KB SRAM data memory• 1.5KB utility ROM• Soft stackStack Memory The device provides a soft stack that can be used to store program return addresses (for subroutine calls and inter-rupt handling) and other general-purpose data. This soft stack is located in the 2KB SRAM data memory, which means that the SRAM data memory must be shared between the soft stack and general-purpose application data storage. However, the location and size of the soft stack is determined by the user, providing maximum flexibility when allocating resources for a particular appli-cation. The stack is used automatically by the processor when the CALL, RET, and RETI instructions are executed and when an interrupt is serviced. An application can also store and retrieve values explicitly using the stack by means of the PUSH, POP, and POPI instructions.The SP pointer indicates the current top of the stack, which initializes by default to the top of the SRAM data memory. As values are pushed onto the stack, the SP pointer decrements, which means that the stack grows downward towards the bottom (lowest address) of the data memory. Popping values off the stack causes the SP pointer value to increase. Refer to the MAXQ610 User’s Guide for more details.Utility ROM The utility ROM is a 1.5KB block of internal ROM memory located in program space beginning at address 8000h. This ROM includes the following routines:• Production test routines (internal memory tests, mem-ory loader, etc.), which are used for internal testingonly, and are generally of no use to the end-applica-tion developer• User-callable routines for buffer copying and fast table lookup (more information on these routines can be found in the MAXQ610 User’s Guide)Following any reset, execution begins in the utility ROM at address 8000h. At this point, unless test mode has been invoked (which requires special programming through the JTAG interface), the utility ROM in the device always automatically jumps to location 0000h, which is the beginning of user application code.Watchdog Timer The internal watchdog timer greatly increases system reliability. The timer resets the device if software execu-tion is disturbed. The watchdog timer is a free-running counter designed to be periodically reset by the appli-cation software. If software is operating correctly, the counter is periodically reset and never reaches its maxi-mum count. However, if software operation is interrupted, the timer does not reset, triggering a system reset and optionally a watchdog timer interrupt. This protects the system against electrical noise or electrostatic discharge (E SD) upsets that could cause uncontrolled processor operation. The internal watchdog timer is an upgrade to older designs with external watchdog devices, reducing system cost and simultaneously increasing reliability. The watchdog timer functions as the source of both the watchdog timer timeout and the watchdog timer reset. The timeout period can be programmed in a range of 215 to 224 system clock cycles. An interrupt is gener-ated when the timeout period expires if the interrupt is enabled. All watchdog timer resets follow the pro-grammed interrupt timeouts by 512 system clock cycles. If the watchdog timer is not restarted for another full interval in this time period, a system reset occurs when the reset timeout expires. See Table 1.Table 1. Watchdog Interrupt Timeout (Sysclk = 12MHz, CD[1:0] = 00)WD[1:0]WATCHDOG CLOCK WATCHDOG INTERRUPT TIMEOUTWATCHDOG RESET AFTER WATCHDOG INTERRUPT (µs)00Sysclk/215 2.7ms42.7 01Sysclk/21821.9ms42.7 10Sysclk/221174.7ms42.7 11Sysclk/224 1.4s42.716-Bit Microcontroller with Infrared ModuleIR Carrier Generation andModulation TimerThe dedicated IR timer/counter module simplifies low-speed infrared (IR) communication. The IR timer imple-ments two pins (IRTX and IRRX) for supporting IR trans-mit and receive, respectively. The IRTX pin has no corre-sponding port pin designation, so the standard PD, PO, and PI port control status bits are not present. However, the IRTX pin output can be manipulated high or low using the PWCN.IRTXOUT and PWCN.IRTXOE bits when the IR timer is not enabled (i.e., IREN = 0).The IR timer is composed of a carrier generator and a carrier modulator. The carrier generation module uses the 16-bit IR carrier register (IRCA) to define the high and low time of the carrier through the IR carrier high byte (IRCAH) and IR carrier low byte (IRCAL). The carrier modulator uses the IR data bit (IRDATA) and IR modula-tor time register (IRMT) to determine whether the carrier or the idle condition is present on IRTX.The IR timer is enabled when the IR enable bit (IREN) is set to 1. The IR Value register (IRV) defines the begin-ning value for the carrier modulator. During transmission, the IRV register is initially loaded with the IRMT value and begins down counting towards 0000h, whereas in receive mode it counts upward from the initial IRV regis-ter value. During the receive operation, the IRV register can be configured to reload with 0000h when capture occurs on detection of selected edges or can be allowed to continue free-running throughout the receive opera-tion. An overflow occurs when the IR timer value rolls over from 0FFFFh to 0000h. The IR overflow flag (IROV) is set to 1 and an interrupt is generated if enabled (IRIE = 1).Carrier Generation Module The IRCAH byte defines the carrier high time in terms of the number of IR input clocks, whereas the IRCAL byte defines the carrier low time.• IR Input Clock (f IRCLK) = f SYS/2IRDIV[2:0]• Carrier Frequency (f CARRIER) = f IRCLK/(IRCAH + IRCAL + 2)• Carrier High Time = IRCAH + 1• Carrier Low Time = IRCAL + 1• Carrier Duty Cycle = (IRCAH + 1)/(IRCAH + IRCAL + 2) During transmission, the IRCA register is latched for each IRV down-count interval, and is sampled along with the IRTXPOL and IRDATA bits at the beginning of each new IRV down-count interval so that duty-cycle variation and frequency shifting is possible from one interval to the next, which is illustrated in Figure 1.Figure 2 illustrates the basic carrier generation and its path to the IRTX output pin. The IR transmit polarity bit (IRTXPOL) defines the starting/idle state and the carrier polarity of the IRTX pin when the IR timer is enabled.IR Transmission During IR transmission (IRMODE = 1), the carrier genera-tor creates the appropriate carrier waveform, while the carrier modulator performs the modulation. The carrier modulation can be performed as a function of carrier cycles or IRCLK cycles dependent on the setting of the IRCFME bit. When IRCFME = 0, the IRV down counter is clocked by the carrier frequency and thus the modula-tion is a function of carrier cycles. When IRCFME = 1, the IRV down counter is clocked by IRCLK, allowing carrier modulation timing with IRCLK resolution.The IRTXPOL bit defines the starting/idle state as well as the carrier polarity for the IRTX pin. If IRTXPOL = 1, the IRTX pin is set to a logic-high when the IR timer module is enabled. If IRTXPOL = 0, the IRTX pin is set to a logic-low when the IR timer is enabled.A separate register bit, IR data (IRDATA), is used to determine whether the carrier generator output is output to the IRTX pin for the next IRMT carrier cycles. When IRDATA = 1, the car-rier waveform (or inversion of this waveform if IRTXPOL = 1) is output on the IRTX pin during the next IRMT cycles. When IRDATA = 0, the idle condition, as defined by IRTXPOL, is output on the IRTX pin during the next IRMT cycles.The IR timer acts as a down counter in transmit mode. An IR transmission starts when the IRE N bit is set to 1 when IRMODE = 1; when the IRMODE bit is set to 1 when IREN = 1; or when IREN and IRMODE are both set to 1 in the same instruction. The IRMT and IRCA registers, along with the IRDATA and IRTXPOL bits, are sampled at the beginning of the transmit process and every time the IR timer value reload its value. When the IRV reaches 0000h value, on the next carrier clock, it does the following:1) Reloads IRV with IRMT.2) Samples IRCA, IRDATA, and IRTXPOL.3) Generates IRTX accordingly.4) Sets IRIF to 1.5) Generates an interrupt to the CPU if enabled (IRIE = 1). To terminate the current transmission, the user can switch to receive mode (IRMODE = 0) or clear IREN to 0.Carrier Modulation Time = IRMT + 1 carrier cycles。
