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BM23 Bluetooth®Evaluation Board User’s GuideIndex Preface (4)1 OVERVIEW (6)1.1 INTRODUCTION (6)1.2 BM23 EVALUATION BOARD FEATURES (7)1.3 BM23 EVALUATION BOARD CONTENTS (8)1.4 BM23 EVB KIT CONTENTS (10)2. Getting Started (11)2.1 INTRODUCTION (11)2.2 HARDWARE REQUIREMENTS (11)2.2.1 Hardware Setup (11)2.2.2 Using Evaluation Board (11)2.3 APPLICATION DEMONSTRATION (11)2.3.1 AUDIO DEMONSTRATION (A2DP) (11)2.3.2 HSP/HFP DEMONSTRATION (13)2.4SOFTWARE CUSTOMIZATION (14)2.4.1 UI Tool (14)2.4.2 DSP TOOL (19)2.4.4 EEPROM Parameters Update (27)2.5 MODULE CONFIGURATION (29)APPENDIX A. BM23 AUDIO EVALUATION BOARD SCHEMATICS (30)Abbreviations List:AVRCP: Audio Video Remote Control Profile A2DP: Advanced Audio Distribution Profile HFP: Hands-free ProfileHSP: Headset ProfileNFC: Near Field CommunicationSPP: Serial Port ProfilePrefaceINTRODUCTIONThis chapter contains general information that will be useful to know before using theBM23. Items discussed in this chapter include:●Document Layout●Recommended Reading●The Microchip Web Site●Customer Support●Document Revision HistoryDOCUMENT LAYOUTThis user’s guide describes how to use the BM23 Bluetooth Evaluation Board. The document is organized as follows:●Chapter 1. “Overview” – This chapter introduces the BM23 Bluetooth Evaluation Board and provides anoverview of various features.●Chapter 2. “Getting Started” – This chapter describesThe hardware components and setup of the BM23 Bluetooth Evaluation Board.The application demonstrations of the BM23 Bluetooth Evaluation Board.Software/Utility Requirements of the BM23 Bluetooth Evaluation Board.●Appendix A. “BM23 Audio Evaluation Board Schematics” – This appendix includes a schematic of theBM23 Bluetooth Evaluation Board.RECOMMENDED READINGThis user’s guide describes how to use the BM23 Bluetooth Evaluation Board. Other useful documents are listed below. The following Microchip documents are available and recommended as supplemental reference resources:STEREO Module Data Sheet (BM20/23 Data Sheet)MICROCHIP WEBSITEMicrochip provides online support via our web site at . This website is used as a means to make files and information easily available to the customers. Accessible by using your favorite Internet browser, the website contains the following information:●Product Support – Data sheets and errata, application notes and sample programs, design resources,user’s guides and hardware support documents, latest software releases and archived software●General Technical Support – Frequently Asked Questions (FAQs), technical support requests, onlinediscussion groups, Microchip consultant programmer listing●Business of Microchip – Product selector and ordering guides, latest Microchip press releases, listing ofseminars and events, listings of Microchip sales offices, distributors and factory representatives CUSTOMER SUPPORTUsers of Microchip products can receive assistance through several channels:●Distributor or Representative●Local Sales Office●Field Application Engineer (FAE)●Technical SupportCustomers should contact their distributor, representative or Field Application Engineer (FAE) for support. Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of this document. Technical support is available through the website at:DOCUMENT REVISION HISTORYRevision A (Aug 2015)This is the initial released version of this document.Revision 1.0 : Added details of V4 EVB1 OVERVIEW1.1 INTRODUCTIONThis user’s guide describes the hardware and software setup for the BM23 Bluetooth® Evaluation Board. This board contains the hardware needed to evaluate the BM23 Bluetooth module. The BM23 module is mounted to an evaluation board that demonstrates the module’s key features. The evaluation board contains:●PIC18 MCU and YAMAHA YDA174 DSP on board●12 push buttons to control audio playback●Status LEDs●The BM23 supports the following Bluetooth profiles: A2DP, AVRCP, and HFP/HSP●A2DP stereo audio (Sink mode support for Sub-Band Coding (SBC)),●AVRCP media player remote control●HFP/HSP for accepting a phone call support.For data sheet and other details related to BM23 module, refer to the Microchip website at/bm23.This chapter discusses the following topics:●BM23 Evaluation Board Features●BM23 Evaluation Board Contents and Part DetailsThe BM23 Evaluation Board has the following features:●It includes a Bluetooth module (BM23), MCU (PIC18) and DSP (YDA174) on the board for easyfunction and feature demonstration.●BM23 module is a fully qualified Bluetooth version 4.1, fully compatible with Bluetooth version 3.0, 2.0,1.2.●Embedded BM23 module with postage-stamp size form factor of 15 x 29 x 2.5 mm (include shieldingcase)●Embedded Bluetooth stack profiles: A2DP, AVRCP, and HFP/HSP, Bluetooth SIG certified.●System gets power from 15V / 3A DC adapter for speaker application.●Environmentally friendly, RoHS compliant●Keypad matrix on board and controlled by MCU, easy for playback control (play/pause, Vol Up/Down,forward/rewind, Next/previous track etc.).BM23 Evaluation Board contains the following components as shown in Figure 1-1 which describes the evaluation board’s interfaces and connectors. Table 1-1 describes the various components of the evaluation board.FIGURE 1-1: BM23 EVALUATION BOARDMIC (JP23) ICSP (J5)123456TABLE 1-1:BM23 EVALUATION BOARD HARDWARE1.4 BM23 EVB KIT CONTENTSBM23 EVB kit include: BM23 EVB board, 15V adapter, micro USB cable and 2 speaker cables as shown in Figure 1-2.FIGURE 1-2: BM23 EVB KIT1) 15V adapter: main power source of the whole system.2) USB cable: micro USB cable can connect to P3 of BM23 EVB board to do firmware update onBM23.3) Speaker cable: connect speaker to BM23 EVB J6 and J7.2. Getting Started2.1 INTRODUCTIONThis chapter describes how the BM23 Evaluation Board works. Certain hardware and utilities are essential to support the evaluation/development of demo applications. This chapter discusses the following topics:●Hardware Requirements●Software/Utility Requirements●Module Configuration2.2 HARDWARE REQUIREMENTS2.2.1 Hardware SetupTo setup the evaluation hardware, perform the following steps:1. Make sure pin 1 / 2 / 3 of “SW9” in “Off / Off / On” to make system in application mode.2. Connect the speaker line to the amplifier output connector (J6 / 7).2.2.2 Using Evaluation Board1. Connect 15V adapter P2.2. Connect speaker to J6 and J7.3. Long press MFB button (SW24) to turn-on and enter pairing mode. The status LEDs will blink.4. Press and hold Pairing button (SW34). Blue and Red LED will flash alternately. Release the Pairingbutton. Now the BM23 Evaluation board is discoverable.5. Turn on Bluetooth device manager on a host device (PC or smartphone), the host device willdisplay a list of discoverable Bluetooth devices. Select the BM23-002 EVB and connect with it.6. If the pairing with the device is successful, BM23 evaluation board is connect to the host device.Once connected, BM23 evaluation board enables Advanced Audio Distribution Profile (A2DP) for audio playback and Audio Video Remote Control Profile (AVRCP) for player control.7. Play music and the host device and listen the music on the speaker. This will demonstrate A2DP.8. If host device is cell phone, call you cell phone from another phone. Accept the incoming phone callon your paired and connected cell phone. This will demonstrate HFP.2.3 APPLICATION DEMONSTRATION2.3.1 AUDIO DEMONSTRATION (A2DP)In this demonstration, user can play an audio stream on both BM23 evaluation boards using a computer or smartphone. The following are the steps to perform the demonstration.1. Connect BM23 evaluation board to a host device (PC or smartphone) that has an audio source.2. Connect speakers to BM23 evaluation board J6 / 7.Media Player, iTunes, and Android).4. Start the audio stream on the media player.When BM23 evaluation board is connected to an audio source compatible with Bluetooth AVRCP, the following audio control buttons can be used:●Control the volume of audio output (Vol+ (SW27), Vol- (SW28)).●Go to the previous track(SW23)●Go to the next track(SW45)●Start / stop playing the current track (SW31).FIGURE 1-2: BM23 EVALUATION BOARD AUDIO CONTROL BUTTONS2.3.2 HSP/HFP DEMONSTRATIONIn this demonstration, user can explore the hands-free profile setting to receive an incoming voice call from a paired smartphone. This demonstration requires a microphone. It would be good to use a PCheadset/microphone (with two-plugs). The following are the steps to perform the demonstration.1. Connect the speakers / microphone to BM23 evaluation board’s audio out connector (J6/7) and MICinput (P6) respectively.2. Connect BM23 evaluation board to a smartphone that supports the A2DP and HFP/HSP Bluetoothprofiles.3. From another one phone, initiate a call to the smartphone that is paired with BM23 evaluation board. TheA2DP stream pauses and the ringtone plays on the speakers.4. Click butto n “MFB” on BM23 evaluation board to accept the incoming call.5. Once phone call is terminated, A2DP stream resumes.2.4 SOFTWARE CUSTOMIZATIONUser can customized UI and DSP settings according to their requirements. These settings can then be merged along with patch code to create IISC patch file (*.ipf). This patch file then programmed into EEPROM. Process of patch file creation is given below.Tools needed for customizationUI Tool: user can use this tool to create customize Bluetooth behavior like button functionality, Bluetooth name etc.DSP Tool: user can use this tool to modify audio parameter.MPET Tool: user can use this tool to merge UI, DSP and patch code. Details about Patch code will be provided latter section.EEPROM Tool: user can use this tool to upgrade the merged parameter into EEPROM of BM23.All these tools can be obtained from /bm23 or through FAE.2.4.1 UI ToolStep1. Open UI toolStep2. Load appropriate default UI setting (included in UI tool package) or previous saved file.Step3.Click “Edit” to modify the settings.Step4. In the main settings, profile can be enabled/disabled by checking/unchecking the box as shown below.Click “Next” for other setting.Step5. You can do system and functional setting in these pages.Click “Help” you can get more detail information.Step6. After finish parameter selection, click “Finish” button and a message will remind you check EEPROM size on your system.Step7.Click “Save” button to save these UI parameter s as a “.txt” file2.4.2 DSP TOOLStep1. Open DSP toolStep2. Select IC version ““IS2020_XXX_SHS” (XXX is the version of chip, e.g. IS2023S-002)Step3.You can setup all voice and audio function in these pages.Step4. Click “Save” button to save these DSP parameters as a “.txt” file after finish all DSP setting.2.4.3 MERGE TOOLStep1.Open MPET tool, click “Next” to set up.Step2.Select “UI Patch Only” to use full EEPROM table to merge UI and DSP parameter.Step3.Select the bin file (full EEPROM table) and click “Next”Step4. If the bin file includes UI/DSP/patch code, you can see them as shown in the above figure. If you want to keep any one of them in your customization, you can select that and use “pull down” button (2) to add them to merge list. For adding customized parameters, you can use add button (+) (3) to add new parameters (e.g. UI/DSP parameters), into tool to merge with EEPROM table.Step5. Select output path and choose a file name for the merged EEPROM table.Step6.Click “Next” and choose Merge Default Bin to Patch (Patch File, *.ipf) as shown in the following picture and then Click “Next”. “Generate” button to generate the new EEPROM table.Step7. Click Generate buttonStep8.Select all as shown below and then click Next.Step9. Now you have a merged patch file (*.ipf file).2.4.4 EEPROM Parameters UpdateStep1. Make sure SW9 in “ROM TEST” mode. Mode switch (1/2/3 – on/off/on)Step2. Connect EVB “P1” port and PC by USB cable. LED1 & LED2 on EVB will keep lighting. Step3. Run the E2PROM_tool.exe program and a window will be come up as belowStep4. Specify the COM Port (1). Click IC/Module (2) Identify to know IC version of BM23. This is useful to prevent IC version mismatch.Step5. Press ”Browse” (3) to choose the *.ipf file (created in section 2.4.3) and click Write(4)Step6. After data update is completed, remove USB cable and make SW9 to “ROM APP”(mode Switch 1/2/3 off/off/on) mode and power cycle.EVB will be using new setting from EEPROM. Follow section 2.0 to see the effect of parameter customization.2.5 MODULE CONFIGURATION 2.5.1 Mode SettingsSetting in Mode Switch:APPENDIX A. BM23 AUDIO EVALUATION BOARD SCHEMATICS EVB block diagramKey Button Matrix:BM23 BLUETOOTHEVALUTATION BOARD USER ’S GUIDE2K2_02_43_0C 510u /1C O D S Y S _P W R R S T _NC 54.7u /P C B 1J P 11J P 1x 2C I _T XD C I _R X D F 2F o o t i n g 1F 4F o o t i n g1F 3F o o t i n g 1F 1F o o t i n g 1M A I N C I R C U I T4.0B M 23 E V BB48T h u r s d a y , O c t o b e r 01, 201503605F , N o .5, I n d u s t r y E . R d . V I I , H s i n c h u S c i e n c e P a r k ,H s i n c h u C i t y 30078, T a i w a n T E L . 886-3-5778385U 7G 691L 293G N D1R S T 2V C C 3R S T _N S W 10T S 08M -P F21C UP 1P 2P 3P 4P 5T P 6T P 7T P 8T P 9T P 1T P 1T P 1D S P /M C U I N TE RF A C E U 17314u /16V P(15V )S P K O U T0.1u /50VC 106I 2S I N T E R F A C ER 1733R 11833R 1833R 1933B o a r d N a m eS i z e T i t l eR e v D a t e :S h e e t o f P /N D S P _Y D A 1744.0B M 23 E V BB68W e d n e s d a y , J u l y 22, 201503605F , N o .5, I n d u s t r y E . R d . V I I , H s i n c h u S c i e n c e P a r k ,H s i n c h u C i t y 30078, T a i w a n T E L . 886-3-5778385R F S 0S C L K T F S 0D R 0D T 0A M PS P _M U T E S P _S L E E P S P _I C _N S P _P 1_2S P _P 1_3S P _P R O T _N S P _I R Q _N 0.1u /50VC 10513300u /50VR 12R 110V3R 377C U _P 71B U T T O NC U _P 70R 1R 0R 2C U _P 72S W 34T S 08M -P FS W 35T S 08M -P FS W 38T S 08M -P FB o a r d N a m eS i z e T i t l eR e v D a t e :S h e e t o f P /N M C U _B U T T O N4.0B M 23 E V BA88M o n d a y , J u l y 27, 201503605F , N o .5, I n d u s t r y E . R d . 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第32卷2004年　第2期4　月燃　料　化　学　学　报JOURNAL OF FUE L CHEMISTRY AND TECHNOLOGYVol 132　No 12Apr 1 2004文章编号:025322409(2004)022*******　收稿日期:2003204204;修回日期:2003212219　基金项目:国家自然科学基金(50076037)　作者简介:严建华(19622),男,浙江宁波人,博士,教授,从事废弃物无害化能源利用的基础理论和工程应用研究。

E 2m ail :yanjh @cm 废轮胎热解石脑油馏分的组成分析严建华,高雅丽,池　涌,张志霄,王　琼,岑可法(浙江大学热能工程研究所能源利用与环境工程教育部重点实验室,浙江杭州　310027)摘　要:研究了废轮胎在回转窑中试反应器中进行中温段(450℃～650℃)热解所得产物油中石脑油馏分(i 1b 1p 1～200℃)的品质。

对原始热解油进行实沸点蒸馏,石脑油馏分的收率随热解温度的升高而明显增加,在600℃取得最大值40148%,之后又有所下降。

采用G C 和G C 2MS 对石脑油馏分的组成进行了分析。

结果表明,热解石脑油具有很强的芳香性,而且芳烃含量随热解温度的升高而持续增加,热解温度在550℃以上的石脑油中的芳香烃含量超过80%。

轻质单环芳烃苯、甲苯、乙苯和二甲苯等为其中的主要芳烃。

热解石脑油中的脂肪烃多为不饱和烃。

关键词:废轮胎;热解;石脑油;芳香烃中图分类号:T Q78313 文献标识码:A 热解法处理废轮胎可获得较高的能源回收率且引起的二次污染较低,是一种有前途的废轮胎处理方法。

90年代以来,国际上废轮胎热解研究逐渐由小型试验扩展到中试乃至大型规模,本文的研究也是以在自行设计的20kg Πh 连续式回转窑热解中试装置上开展的废轮胎的中温热解试验[1]为基础的。

以回收液态产物为主要目的的中温热解工艺一般可获得38%～58%的热解油收率[2～4]。

SZ11-GW-8聚盒五代网关数据手册V1.0上海顺舟智能科技股份有限公司更新日期：2020-8-28文档修订记录版本变化状态日期作者V1.0 新增2020-8-28 SHUNCOM前言顺舟的聚盒五代网关是顺舟新一代物联网无线通信网关，该产品采用高性能的处理器（六核64位，主频高达1.8GHz，4GB双通道DDR3,16GB高速eMMC 5.1）以及工业级的无线通信模块，利用公网无线网络+小无线网络为用户提供了免去现场布线以及无线长距离数据传输的功能。

同时高配置硬件参数和丰富的接口适合各种工业及商业物联网应用，不仅本身提供丰富的应用供客户使用，安卓的成熟生态及简便的二次开发也为客户打造自己的网关提供便利。

可广泛用于如自助终端行业、智能电网、智能交通、供应链自动化、工业自动化、智能建筑、消防、环境保护、智慧医疗、智能照明、智能农业和煤矿、石油等各种商业和工业物联网场合。

顺舟技术优势顺舟成立之初，主要研发无线通信、组网核心领域，确保通信稳定可靠、扩展性好；在LoRa、Zigbee、2G/4G/NB-IOT等有丰富的应用经验顺舟业务优势业务覆盖广：上海、深圳、西安办、北京分公司；产品线丰富：智慧城市、智能工业、智慧园区、智能家居、智能照明等；统一系统平台，结合全无线技术，打造万物互联；项目分布广：项目遍及国内外。

顺舟定位产品：打造极致化产品，符合客户及市场各种需求服务：立志成为客户技术团队，服务于客户，合作共赢目录1 产品概述 (5)1.1功能及特点 (5)1.2产品规格和网络参数 (7)2 产品外观及接口 (11)2.1产品图片 (11)2.2接口及指示灯说明 (12)3 设备组装 (15)3.1配件检查 (16)3.2SIM卡安装及连接 (16)3.3安装其他配件 (16)4 设备使用 (17)4.1设备上电 (17)4.2登录WEB管理页面 (18)4.3设备联网 (18)5 支持及维护 (22)欢迎使用顺舟智能科技股份有限公司的产品,请在使用之前阅读好此手册。

格式及内容说明：
1)页面设置：页边距均为0.5cm；
2)表格总宽度：28cm，表格行高：0.8cm，除第1、1列外，其余4列的列宽平均分；
3)表头底纹茶色背景2，每页出现；
4)表格对齐：表头居中，第1、2列居中，其余居中靠左；
5)第2列文字方向方向垂直；
6)文档标题黑体小四加粗，表头标题文字黑体五号加粗，其余内容均为宋体五号；
7)所有行距1.0（单倍行距）；
8)标题标注安全等级（S?A?G?）序号2位数，控制点标注安全等级（S?A?G?），测评项的a)、b)英文序号要用正文而不要用编号模式，当某个测评方法（如
访谈）有多个测评步骤的时候，需要用1)、2)的数字序号进行区分。

9)说明列在技术要求部分，主要描述预期结果和对测评方法的详细解释，在管理要求部分，主要描述被访谈内容可能对应的岗位和检查的文档的主要内容
等。

扌直逖碌妇 2021, 47(2):226 -232Plant ProLccLion宁夏地区烟粉虱对5种常用杀虫剂的抗药性洪波，曹娜，赵小云,高凯，贾彦霞,马百林，董 王新谱**收稿日期：2019-11-21 修订日期：2020-02- 14基金项目：宁夏"十三五”重点研发计划重大项目(2018BBF0202102)；宁夏农村农业厅2021年农业关键技术攻关和重大实用技术推广项目* 通信作者 E-mail ：wangxinpu @nxueducn芸,(宁夏大学农学院，银川750021)摘要采用浸叶法分别测定了宁夏8个地区烟粉虱成虫田间种群对4类5种杀虫剂的抗性。

结果表明，供试烟粉虱种群对高效氯氰菊酯已产生了中等至极高水平抗性，抗性倍数为33.31〜227. 98倍;对烯啶虫胺产生了中等至高水平抗性，抗性倍数为12. 14〜69. 33倍；对毒死蜱和吡虫啉产生了低至中等水平抗性，抗性倍数分别为7. 63〜3& 85倍和6.05〜22. 43倍，个别地区种群对吡虫啉尚处于敏感水平；对阿维菌素处于敏感性降低至中等水平抗 性，抗性倍数为4.54〜13.22倍。

烟粉虱对5种杀虫剂的抗性有明显的区域性，抗性最为普遍且严重的地区为贺兰新平和吴忠，其次为贺兰产业园、石嘴山大武口、中卫和永宁，而西夏区军马场、固原烟粉虱种群的抗性则相对较低。

对银川3地烟粉虱抗药性监测结果表明，在5种杀虫剂中，其对高效氯氰菊酯的抗性发展最为迅速，其次为烯啶虫胺，对阿维菌素和吡虫啉的抗性发展相对较慢，而西夏区军马场和贺兰产业园种群对毒死蜱敏感性有所恢复。

关键词烟粉虱；杀虫剂；抗药性；宁夏中图分类号： S4364122 文献标识码： ADOI： 1016688/jzwbh2019637Resistance of Bemisia tabaci to five insecticides in NingxiaHONG Bo, CAO Na, ZHAO Xiaoyun, MA Bailin, DONG Yun, GAO Kai, JIA Yanxia, WANG Xinpu *(School of Agriculture , Ningxia University, Yinchan 750021, China)Abstract Resistance of eight populations of Bemisia tabaci collected from Ningxia to five insecticides was determined by leaf dipping method. The results showed that these populations of B .tabaci showed medium to extremely high level of resistance to beta -cypermethrin , with the resistance ratios of 33.31—227.98,and mediumto high kvel of resistance to nitenpyram with the resistance ratios of 12.14—69.33. The B .tabaci developed low to medium level of resistance to chlorpyrifos and imidacloprid, and the resistance ratio was 7.63—38. 85 and 6.05— 22.43, respectively. However, some populations still kept sensitive to imidacloprid. Decreased sensitivity of B.tabaci toabamectinwasfoundinsomepopulationsand mediumresistanceinotherpopulations ，withresistanceratio of 4. 54—13. 22. The results of this study showed that the resistance of B .tabaci to the five insecticides wasregionally distributed, and the Xinping , Helan and Wuzhong populations showed the most serious resistance , followed by Helan Industrial Park , Dawukou , Zhongwei and Yongning populations , while Xixia and Guyuanpopulations showed the lowest resistance. The results also showed that the three populations from Yinchuan developed resistance to beta -cypermethrin most quickly , followed by nitenpyram , and the development ofresistancetoabamectinandimidacopridwasreativeysow whiethesensitivitytochorpyrifosinpopuationsfrom Xixia Military Horse Farm and Helan Industrial Park was recovered to some extent.Keywords Bemisiatabaci； insecticide ； resistance ； Ningxia烟粉虱Bemisia tabaci 是一种世界范围内的重要害虫,广泛分布于全球除南极洲以外的各大洲。

中日韩三国的社会经济发展与人口老龄化的对比研究金益基林明鲜【内容摘要】东亚的中国、韩国和日本在地理位置上是紧密相关的，除了地理上的相近外，这三个国家还共同拥有很多社会、文化上的相似点。

虽然有很多的相似点，三个国家还是存在着不少的差异。

本文要探讨的是中国、韩国和日本社会经济的发展和人口老龄化的比较问题。

就这个主题而言，本文旨在说明三个国家社会经济发展的趋势，人口老龄化问题以及人口转型的趋势。

之后，本文将根据这三个东亚国家经历的相似点和异同点讨论社会经济发展对人口老龄化的影响。

关键词：中国；韩国；日本；老龄化【作者简介】金益基，密歇根大学社会学博士，韩国东国大学教授；林明鲜，名古屋大学社会学博士，山东工商学院社会学研究所教授。

同属东亚国家的中国、韩国和日本各自所处的地理位置既相连又相邻。

除了地理上的相连相近外，这三个国家在社会、文化上还有诸多相似之处，不仅如此它们更拥有一些共同之处（Sodei,1996）。

第一，他们同属于儒家文化圈或者说是中国文化圈。

这三个国家的人民曾经而且现在还部分使用着相同的汉字，尽管这些文字在这三个国家间的发音和所表达的意义往往有时不尽相同。

和中国国土相连的韩国深受中国儒家思想的熏陶和影响，其后，儒家思想在隋唐时期又通过朝鲜半岛传入了日本。

在儒家思想影响下，这三个国家都实行了父权制的家庭制度，承袭崇拜祖先和男性支配女性的传统。

孝道是儒家思想中的最重要的内容之一，这一点与西方国家是不同的。

虽说儒家思想对这三个国家的影响从时间早晚、程度深浅上有所不同，但有一点可以肯定，在当今“全球化”浪潮的趋势下这三个国家仍不同程度地保持着儒家的传统文化。

第二，这三个国家都在很短的时间内完成了人口转型从高出生率、高死亡率到低出生率、低死亡率的转变。

日本的人口出生率在16年的时间里下降了一半，从1947年的4.54下降到了1963年的2.22；韩国的人口出生率1960年为6.0，1975年为2.92，在不到15年的时间里就下降了一半；而中国人口出生率的下降速度更快，从1965年的6.06到1976年的3.32，十年时间几乎就下降了一半，到1980年这个数字已经下降到了2.55。

一、本表为上报国家学位信息库专用表，适用于学历硕士（全日制硕士）研究生。

所填内容要求翔实、准确，真实可靠、字迹清楚、端正，同时须保证信息填写的完整性，切勿随意更改、遗漏；填写信息必须规范，专有名称填写全称，不得简称填写。

如民族栏是汉族不能填“汉”须填写“汉族”，如政治面貌栏是党员不能填“中共党员”或“党员”，须填“中国共产党党员”等等。

不按规定要求造成个人信息无法上传，由填报者本人负责。

二、填表说明：（每项均为必填项）1.姓名：与学位证书和身份证上的姓名一致。

2.姓名拼音：填写姓名的汉语拼音（如王小二的汉语拼音：Wang xiao er），来华留学研究生填写护照上的英文姓名，需大写（如TRAN THI HOA）。

3.性别：男性\女性。

4.国别：按实际填写。

如“中国”、“泰国”、“越南”、“老挝”等。

5.民族：填写“汉族”、“壮族”、“瑶族”等。

留学生此项空白，不用填写。

6.政治面貌代码和7.政治面貌（必须选择一项填写）：留学生此项空白，不用填写。

8.出生日期：与学位证书和身份证上的信息一致。

以文本格式，填写八位阿拉伯数字，如“19920106”。

9.证件号码：以文本格式，中国学生填写身份证号码；留学生填写护照号码，如“B65402”。

10.攻读硕士学位前户口所在省或直辖市：如填写“北京市”、“广西壮族自治区”、“山东省”等。

留学生此项空白，不用填写。

11.专业代码和12.专业名称：（1）学术型专业（2）专业型专业13.预取得硕士学位类别代码和14.预取得硕士学位的类别（1）学术型学位（2）专业型学位15.入学时的准考证号/考生编号:以文本格式录入。

16.学号:以文本格式录入。

17.论文题目：不加书名号。

18.论文关键词:需填写 3—5个关键词，每个关键词之间用中文输入法的“，”隔开。

19.论文选题来源:必须在下表中选取一项填写，内容不得改动。

20.论文类型：包括基础研究、应用研究、综合研究和其它共四种类型，需选取一类填写。

152试车报告TEST REPORT撰文＝Sonny 设计＝唐辉出国旅游已经是中国民众最热衷的度假休闲方式，越来越多的人开始尝试根据自身喜爱和偏好量身打造游玩计划。

对于“血液里流淌着汽油”的车迷而言，除了世界名胜和人文景观之外，遍布欧、美、亚大陆的汽车博物馆同样令人向往。

世界著名汽车博物馆身为汽车鼻祖，奔驰不仅是很多人的最爱，同时也是斯图加特的标识。

奔驰博物馆于2006年5月正式向游客开放，建筑面积达到16 500平方米。

馆内收藏有160余辆奔驰各个时期生产的汽车和1500余件相关展品，其中150余辆车型均保持原厂样貌。

从历史最久远的Mercedes Simplex 40，到奔驰最新的作品AMG GT，顺着DNA 双螺旋楼梯信步而上，根据不同的收藏展示，耳边传来的音乐也在马蹄声和汽笛声中交错。

奔驰博物馆提供中文讲解器，参观完毕后讲解器挂带会作为纪念品送给游客。

奔驰博物馆内有奔德国 斯图加特奔驰博物馆地址：Mercedes-Benz Museum,Mercedesstra ße 100, 70372 Stuttgart152文化CULTURE153试车报告TEST REPORT保时捷博物馆分为旧馆和新馆两处展馆。

旧馆位于斯图加特保时捷总公司，虽然展品不多但精品林立，主要展出的是保时捷产品的构造和技术，适合对汽车知识有一定了解的游客。

保时捷新馆在2007年正式对外开放，坐落于斯图加特保时捷祖文豪森工厂附近的该博物馆以超级跑车为主要展品，同时也是近代建筑史上著名的设计建筑。

在造型锐利的展馆内部，能够感到保时捷强烈的自信与自豪。

经过历史沉淀的功勋赛车、每一座饱含沧桑的赛事奖杯占据了该博物馆的大面积区域。

除此之外，保时捷的经典跑车和超级跑车同样向游客展现出保时捷的辉煌和激情。

展品几乎全部为制造原件，历史的痕迹让人大饱眼福。

以时间为轴参观博物馆能够了解到保时捷发展史上的辛酸苦难和辉煌荣耀，在每一阶段的重点展品旁都会配有讲解仪器，帮助游客详细了解车型或技术背后的故事。

1/26XC6101_07_XC6111_17 ETR0207_009Preliminary◆CMOS Voltage Detector◆Manual Reset Input ◆Watchdog Functions ◆Built-in Delay Circuit ◆Detect Voltage Range: 1.6~5.0V, ± 2% ◆Reset Function is Selectable V DFL (Low When Detected) V DFH (High When Detected)■GENERAL DESCRIPTION The XC6101~XC6107, XC6111~XC6117 series aregroups of high-precision, low current consumption voltage detectors with manual reset input function and watchdog functions incorporating CMOS process technology. The series consist of a reference voltage source, delay circuit, comparator, and output driver.With the built-in delay circuit, the XC6101 ~ XC6107, XC6111 ~ XC6117 series’ ICs do not require any external components to output signals with release delay time. Moreover, with the manual reset function, reset can be asserted at any time. The ICs produce two types of output; V DFL (low when detected) and V DFH (high when detected).With the XC6101 ~ XC6105, XC6111 ~ XC6115 series’ ICs, the WD pin can be left open if the watchdog function is not used. Whenever the watchdog pin is opened, the internal counter clears before the watchdog timeout occurs. Since the manual reset pin is internally pulled up to the V IN pin voltage level, the ICs can be used with the manual reset pin left unconnected if the pin is unused.The detect voltages are internally fixed 1.6V ~ 5.0V in increments of 100mV, using laser trimming technology. Six watchdog timeout period settings are available in a range from 6.25msec to 1.6sec. Seven release delay time 1 are available in a range from 3.13msec to 1.6sec.■APPLICATIONS●Microprocessor reset circuits●Memory battery backup circuits ●System power-on reset circuits ●Power failure detection■TYPICAL APPLICATION CIRCUIT* Not necessary with CMOS output products.■FEATURESDetect Voltage Range: 1.6V ~ 5.0V, +2% (100mV increments)Hysteresis Range : V DF x 5%, TYP .(XC6101~XC6107)V DF x 0.1%, TYP .(XC6111~XC6117)Operating Voltage Range : 1.0V ~ 6.0V Detect Voltage Temperature Characteristics : +100ppm/O C (TYP .) Output Configuration : N-channel open drain,CMOSWatchdog Pin : Watchdog inputIf watchdog input maintains ‘H’ or ‘L’ within the watchdog timeout period, a reset signal is output to the RESET output pinManual Reset Pin : When driven ‘H’ to ‘L’levelsignal, the MRB pin voltage asserts forced reset on theoutput pin.Release Delay Time : 1.6sec, 400msec, 200msec,100msec, 50msec, 25msec, 3.13msec (TYP .) can be selectable.Watchdog Timeout Period : 1.6sec, 400msec, 200msec,100msec, 50msec,6.25msec (TYP .) can be selectable.■TYPICAL PERFORMANCE CHARACTERISTICS ●Supply Current vs. Input Voltage* ‘x’ represents both ‘0’ and ‘1’. (ex. XC61x1⇒XC6101 and XC6111)2/26XC6101~XC6107, XC6111~XC6117 SeriesPIN NUMBERXC6101, XC6102 XC6103 XC6104, XC6105XC6106, XC6107XC6111, XC6112 XC6113 XC6114, XC6115XC6116, XC6117SOT-25 USP-6C SOT-25 USP-6C SOT-25 USP-6C SOT-25USP-6CPIN NAMEFUNCTION1 4 - - 1 4 1 4 R ESETB Reset Output(V DFL : Low Level When Detected)2 5 2 5 2 5 2 5 V SSGround3 2 3 2 - -4 1 M RB ManualReset 4 1 4 1 4 1 - - WDWatchdog5 6 5 6 5 6 5 6 V IN Power Input - - 1 4 3 2 3 2 RESETReset Output (V DFH: High Level When Detected)■PIN CONFIGURATION SOT-25 (TOP VIEW)MRBV IN WD RESETBV SSMRBWD RESETV SSV IN RESETWD RESETBV SS V IN SOT-25 (TOP VIEW)RESETMRB RESETBV SS V IN SOT-25 (TOP VIEW) ■PIN ASSIGNMENT●SOT-25XC6101, XC6102 SeriesXC6111, XC6112 SeriesSOT-25 (TOP VIEW)XC6103 & XC6113 SeriesXC6104, XC6105 Series XC6114, XC6115 SeriesXC6106, XC6107 Series XC6116, XC6117 Series●USP-6CXC6101, XC6102 Series XC6111, XC6112 SeriesXC6103 & XC6113 SeriesXC6104, XC6105 Series XC6114, XC6115 SeriesXC6106, XC6107 Series XC6116, XC6117 SeriesUSP-6C (BOTTOM VIEW)USP-6C (BOTTOM VIEW)USP-6C (BOTTOM VIEW)USP-6C (BOTTOM VIEW)* The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the V SS pin.3/26XC6101 ~ XC6107, XC6111~ XC6117SeriesRESET OUTPUTSERIES WATCHDOGMANUAL RESET V DFL (RESETB)V DFH (RESET)XC6101 XC6111 Available Available CMOS - XC6102XC6112AvailableAvailableN-channel open drain-XC6103 XC6113 Available Available - CMOS XC6104 XC6114 Available Not AvailableCMOS CMOS XC6105 XC6115 Available Not Available N-channel open drain CMOS XC6106 XC6116 Not Available AvailableCMOSCMOS XC6107XC6117Not AvailableAvailableN-channel open drainCMOSDESIGNATORDESCRIPTIONSYMBOLDESCRIPTION0 : V DF x 5% (TYP .) with hysteresis ① Hysteresis Range1 : V DF x 0.1% (TYP .) without hysteresis② Functions and Type of Reset Output1 ~ 7: Watchdog and manual functions, and reset output type as per Selection Guide in the above chartA : 3.13msec (TYP .)B : 25msec (TYP .) C: 50msec (TYP .) D : 100msec (TYP .) E : 200msec (TYP .) F : 400msec (TYP .) ③ Release Delay Time * H : 1.6sec (TYP .)0 : No WD timeout period forXC6106, XC6107, XC6116, XC6117 Series 1: 6.25msec (TYP .) 2 : 50msec (TYP .) 3 : 100msec (TYP .) 4 : 200msec (TYP .) 5 : 400msec (TYP .) ④ Watchdog Timeout Period6: 1.6sec (TYP .) ⑤⑥ Detect Voltage 16 ~ 50: Detect voltageex.) 4.5V: ⑤⇒4, ⑥⇒5M : SOT-25 ⑦ Package E : USP-6C R : Embossed tape, standard feed ⑧ Device OrientationL: Embossed tape, reverse feed* Please set the release delay time shorter than or equal to the watchdog timeout period. ex.) XC6101D427MR or XC6101D327MR■PRODUCT CLASSIFICATION ●Selection Guide ●Ordering Information XC61①②③④⑤⑥⑦⑧4/26XC6101~XC6107, XC6111~XC6117 Series■PACKAGING INFORMATION●SOT-25●USP-6C5/26XC6101 ~ XC6107, XC6111~ XC6117Series④ Represents production lot number0 to 9 and A to Z and inverted 0 to 9 and A to Z repeated. (G, I, J, O, Q, W expected.) * ‘X’ represents both ‘0’ and ‘1’. (ex. XC61X1⇒XC6101 and XC6111)■MARKING RULE●SOT-25①②③④SOT-25 (TOP VIEW)6/26XC6101~XC6107, XC6111~XC6117 Series① Represents product series② Represents release delay time MARK RELEASE DELAY TIME PRODUCT SERIES A 3.13msec XC61XxAxxxxx B 25msec XC61XxBxxxxx C 50msec XC61XxCxxxxx D 100msec XC61XxDxxxxx E 200msec XC61XxExxxxx F 400msec XC61XxFxxxxx H 1.6sec XC61XxHxxxxx③ Represents watchdog timeout period MARK WATCHDOG TIMEOUT PERIOD PRODUCT SERIES 0 XC61X6, XC61X7 series XC61Xxx0xxxx 1 6.25msec XC61Xxx1xxxx 2 50msec XC61Xxx2xxxx 3 100msec XC61Xxx3xxxx 4 200msec XC61Xxx4xxxx 5 400msec XC61Xxx5xxxx 6 1.6sec XC61Xxx6xxxx④⑤ Represents detect voltage MARK④ ⑤DETECT VOLTAGE (V)PRODUCT SERIES3 3 3.3 XC61Xxxx33xx 5 0 5.0XC61Xxxx50xx⑥ Represents production lot number0 to 9 and A to Z repeated. (G, I, J, O, Q, W excepted.)* No character inversion used. ** ‘X’ represents both ‘0’ and ‘1’. (ex. XC61X1⇒XC6101 and XC6111)MARK PRODUCT SERIES MARK PRODUCT SERIES 3 XC6101xxxxxx 8 XC6111xxxxxx 4 XC6102xxxxxx 9 XC6112xxxxxx 5 XC6103xxxxxx A XC6113xxxxxx 6 XC6104xxxxxx B XC6114xxxxxx 7 XC6105xxxxxx C XC6115xxxxxx 3 XC6106xxxxxx 8 XC6116xxxxxx 4 XC6107xxxxxx 9 XC6117xxxxxx■MARKING RULE (Continued)●USP-6CUSP-6C (TOP VIEW)7/26XC6101 ~ XC6107, XC6111~ XC6117Series■BLOCK DIAGRAMS●XC6101, XC6111 Series●XC6102, XC6112 Series●XC6103, XC6113 Series8/26XC6101~XC6107, XC6111~XC6117 Series■BLOCK DIAGRAMS (Continued)●XC6107, XC6117 Series●XC6106, XC6116 Series●XC6105, XC6115 Series●XC6104, XC6114 Series9/26XC6101 ~ XC6107, XC6111~ XC6117SeriesPARAMETERSYMBOL RATINGSUNITSV INV SS -0.3 ~ 7.0 VM RBV SS -0.3 ~ V IN +0.3 VInput Voltage WD V SS -0.3 ~ 7.0V Output Current I OUT 20 mACMOS Output RESETB/RESET V SS -0.3 ~ V IN +0.3Output Voltage N-ch Open Drain Output RESETB V SS -0.3 ~ 7.0VSOT-25 250Power Dissipation USP-6C Pd 100mWOperational Temperature Range Topr -40 ~ +85 OCStorage Temperature Range Tstg -40 ~ +125 OC■ABSOLUTE MAXIMUM RATINGSTa = 25O C10/26XC6101~XC6107, XC6111~XC6117 SeriesNOTE:*1: XC6101~XC6107 (with hysteresis) *2: XC6111~XC6117 (without hysteresis)*3: ‘X’ represents both ‘0’ and ‘1’. (ex. XC61X1⇒XC6101 and XC6111) *4: V DF(T): Setting detect voltage*5: If only “V DF ” is indicated, it represents both V DFL (low when detected) and V DFH (high when detected).PARAMETERSYMBOLCONDITIONSMIN.TYP .MAX. UNITS CIRCUITDetect Voltage V DFL V DFHV DF(T)× 0.98V DF(T) V DF(T)× 1.02 V 1 Hysteresis Range XC6101~XC6107 (*1) V HYS V DF × 0.02V DF × 0.05 V DF× 0.08 V 1Hysteresis Range XC6111~XC6117 (*2) V HYS 0 V DF × 0.001 V DFx 0.01V 1V IN =V DF(T)×0.9V - 5 11 V IN =V DF(T)×1.1V- 10 16 XC61X1/XC61X2/XC61X3XC61X4/XC61X5 (*3)(The MRB & the WD Pin: No connection) V IN =6.0V - 1218 V IN =V DF(T)×0.9V - 4 10 V IN =V DF(T)×1.1V - 8 14 Supply Current I SS XC61X6/XC61X7 (*3)(The MRB Pin: No connection)V IN = 6.0V - 1016 µA 2Operating Voltage V IN 1.0 - 6.0 V 1VIN = 1.0V 0.15 0.5 -V IN =2.0V (V DFL(T)> 2.0V) 2.0 2.5 - V IN =3.0V (V DFL(T) >3.0V) 3.0 3.5 -N-ch.V DS = 0.5V V IN =4.0V (V DFL(T) >4.0V) 3.5 4.0 - 3 V DFL Output Current (RESETB) I RBOUTCMOS,P-chV DS = 0.5V V IN = 6.0V - - 1.1 -0.8 mA 4 N-chV DS = 0.5VV IN =6.0V 4.4 4.9 - 3V IN =1.0V - - 0.08 - 0.02 V IN =2.0V (V DFH(T)> 2.0V)- - 0.50 - 0.30 V IN =3.0V (V DFH(T)>3.0V)- - 0.75 - 0.55V DFHOutput Current (RESET) I ROUT P-ch. V DS = 0.5V V IN =4.0V (V DFH(T)>4.0V)- - 0.95 - 0.75 mA 4Temperature Characteristics △V DF / △Topr ・V DF -40OC < Topr < 85 O C - +100 - ppm / O C12 3.13 5 13 25 3825 50 75 60 100 140 120 200 280 240 400 560Release Delay Time(V DF <1.8V)T DR Time until V IN is increased from1.0V to2.0Vand attains to the release time level,and the Reset output pin inverts.960 1600 2240 ms 5 2 3.13 5 13 25 38 25 50 7560 100 140 120 200 280 240 400 560 Release Delay Time(V DF >1.9V)T DRTime until V IN is increased from1.0V to (V DF x1.1V) and attains to the releasetime level,and the Reset output pin inverts. 960 1600 2240ms 5 Detect Delay Time T DFTime until V IN is decreased from 6.0V to 1.0V and attains to the detect voltage level, and the Reset output pin detectswhile the WD pin left opened.- 3 30 µs 5V DFL /V DFH CMOS Output Leak CurrentI LEAK V IN =6.0V, RESETB=6.0V (V DFL ) V IN =6.0V, RESET=0V (V DFH )- 0.01 - µA 3V DFL N-ch Open DrainOutput Leak CurrentI LEAKV IN =6.0V, RESETB=6.0V-0.010.10µA 3■ELECTRICAL CHARACTERISTICS●XC6101~XC6107, XC6111~XC6117 SeriesTa = 25O CSeriesPARAMETERSYMBOL CONDITIONS MIN.TYP . MAX. UNITS CIRCUIT3.13 6.25 9.38 25 50 7560 100 140 120 200 280240 400 560 Watchdog Timeout Period (V DF <1.8V)T WDTime until V IN increases form1.0V to2.0V andthe Reset output pin is released to go into the detection state. (WD=V SS )960 1600 2240 ms 6 3.13 6.25 9.38 25 50 75 60 100 140 120 200 280240 400 560 Watchdog Timeout Period (V DF >1.9V)T WDTime until V IN increases form1.0V to (V DF x1.1V)and the Reset output pin is released to go into the detection state. (WD=V SS )960 1600 2240 ms 6 WatchdogMinimum Pulse Width T WDIN V IN =6.0V,Apply pulse from 6.0V to 0Vto the WD pin. 300 - - ns 7 Watchdog High Level VoltageV WDH V IN =V DF x 1.1V ~ 6.0V V IN x 0.7- 6 V 7 Watchdog Low Level Voltage V WDL V IN =V DF x 1.1V ~ 6.0V0 - V IN x 0.3 V 7 V IN =6.0V, V WD =6.0V (Avg. when peak )- 12 19Watchdog Input Current I WD V IN =6.0V, V WD =0V (Avg. when peak) - 19 -12 -µA 8 Watchdog Input ResistanceR WDV IN =6.0V, V WD =0V, R WD =V IN / |I WD |315500880k Ω8PARAMETERSYMBOL CONDITIONS MIN.TYP . MAX.UNITS CIRCUITMRBHigh Level VoltageV MRH V IN =V DF x1.1V ~ 6.0V 1.4 - V IN 9MRBLow Level VoltageV MRL V IN =V DF x1.1V ~ 6.0V-0.35 V9MRBPull-up Resistance R MR V IN =6.0V, MRB=0V, R MR =V IN / |I MRB | 1.6 2.4 3.0 M Ω 10 MRB Minimum Pulse Width (*3) XC6101~XC6105 XC6111~XC6115 T MRINV IN =6.0V,Apply pulse from 6.0V to 0V tothe MRB pin 2.8 - -MRB Minimum Pulse Width (*4) XC6106, XC6107 XC6116, XC6117T MRIN V IN =6.0V,Apply pulse from 6.0V to 0V tothe MRB pin1.2 - -µs11●XC6101 ~ XC6103, XC6106 ~ XC6107, XC6111 ~ XC6113, XC6116 ~ XC6117 Series NOTE:*1: V DF(T): Setting detect voltage *2: If only “V DF ” is indicated, it represents both V DFL (low when detected) and V DFH (high when detected). *3: Watchdog function is available. *4: Watchdog function is not available.Ta = 25O CTa = 25O C ■ELECTRICAL CHARACTERISTICS (Continued)●XC6101~XC6105, XC6111~XC6115 Series■OPERATIONAL EXPLANATIONThe XC6101~XC6107, XC6111~XC6117 series compare, using the error amplifier, the voltage of the internal voltage reference source with the voltage divided by R1, R2 and R3 connected to the V IN pin. The resulting output signal from the error amplifier activates the watchdog logic, manual reset logic, delay circuit and the output driver. When the V IN pin voltage gradually falls and finally reaches the detect voltage, the RESETB pin output goes from high to low in the case of the V DFL type ICs, and the RESET pin output goes from low to high in the case of the V DFH type ICs.<RESETB / RESET Pin Output Signal>* V DFL (RESETB) type - output signal: Low when detected.The RESETB pin output goes from high to low whenever the V IN pin voltage falls below the detect voltage, or whenever the MRB pin is driven from high to low. The RESETB pin remains low for the release delay time (T DR) after the V IN pin voltage reaches the release voltage. If neither rising nor falling signals are applied to the WD pin within the watchdog timeout period, the RESETB pin output remains low for the release delay time (T DR), and thereafter the RESET pin outputs high level signal. * V DFH (RESET) type – output signal: High when detected.The RESET pin output goes from low to high whenever the V IN pin voltage falls below the detect voltage, or whenever the MRB pin is driven from high to low. The RESET pin remains high for the release delay time (T DR) after the V IN pin voltage reaches the release voltage. If neither rising nor falling signals are applied to the WD pin within the watchdog timeout period, the V OUT pin output remains high for the release delay time (T DR), and thereafter the RESET pin outputs low level signal.<Hysteresis>When the internal comparator output is high, the NMOS transistor connected in parallel to R3 is turned ON, activating the hysteresis circuit. The difference between the release and detect voltages represents the hysteresis range, as shown by the following calculations:V DF (detect voltage) = (R1+R2+R3) x Vref(R2+R3)V DR (release voltage) = (R1+R2) x Vref(R2)V HYS (hysteresis range)=V DR-V DF (V)V DR > V DF* Detect voltage (V DF) includes conditions of both V DFL (low when detected) and V DFH (high when detected).* Please refer to the block diagrams for R1, R2, R3 and Vref.Hysteresis range is selectable from V DF x 0.05V (XC6101~XC6107) or V DF x 0.001V (XC6111~XC6117).<Watchdog (WD) Pin>The XC6101~XC6107, XC6111~XC6117 series use a watchdog timer to detect malfunction or “runaway” of the microprocessor. If neither rising nor falling signals are applied from the microprocessor within the watchdog timeout period, the RESETB/RESET pin output maintains the detection state for the release delay time (T DR), and thereafter the RESET/RESETB pin output returns to the release state (Please refer to the FUNCTION CHART). The timer in the watchdog is then restarted. Six watchdog timeout period settings are available in 1.6sec, 400msec, 200msec, 100msec, 50msec, 6.25msec.<MRB Pin>Using the MRB pin input, the RESET/RESETB pin signal can be forced to the detection state. When the MRB pin is driven from high to low, the RESETB pin output goes from high to low in the case of the V DFL type ICs, and the RESET pin output goes from low to high in the case of the V DFH type. Even after the MRB pin is driven back high, the RESET/RESETB pin output maintains the detection state for the release delay time (T DR). Since the MRB pin is internally pulled up to the V IN pin voltage level, leave the MRB pin open if unused (Please refer to the FUNCTION CHART). A diode, which is an input protection element, is connected between the MRB pin and V IN pin. Therefore, if the MRB pin is applied voltage that exceeds V IN, the current will flow to V IN through the diode. Please use this IC within the stated maximum ratings (V SS -0.3 ~ V IN+0.3) on the MRB pin.<Release Delay Time>Release delay time (T DR) is the time that elapses from when the V IN pin reaches the release voltage, or when the watchdog timeout period expires with no rising signal applied to the WD pin, until the RESET/RESETB pin output is released from the detection state. Seven release delay time (T DR) watchdog timeout period settings are available in 1.6sec, 400msec, 200msec, 100msec, 50msec, 25msec, 3.13msec.<Detect Delay Time>Detect Delay Time (T DF) is the time that elapses from when the V IN pin voltage falls to the detect voltage until the RESET/ RESETB pin output goes into the detection state.Series■TIMING CHARTS●CMOS Output●T DF (CMOS Output)VINVDFL LevelGNDVIN Level VDFL Level GNDVIN x 0.1V■NOTES ON USE1. Please use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent damage to the device.2. When a resistor is connected between the V IN pin and the input, the V IN voltage drops while the IC is operating and a malfunction may occur as a result of the IC’s through current. For the CMOS output products, the V IN voltage drops while the IC is operating and malfunction may occur as a result of the IC’s output current. Please be careful with using the XC6111~XC6117 series (without hysteresis).3. In order to stabilize the IC’s operations, please ensure that the V IN pin’s input frequency’s rise and fall times are more than 1 µ sec/V.4. Noise at the power supply may cause a malfunction of the watchdog operation or the circuit. In such case, please strength the line between V IN and the GND pin and connect about 0.22µF of a capacitor between the V IN pin and the GND pin.5. Protecting against a malfunction while the watchdog time out period, an ignoring time (no reaction time) occurs to the rise and fall times. Referring to the figure below, the ignoring time (no reaction time) lasts for 900µsec at maximum.GNDGNDGNDVIN Pin Wave FormWD Pin Wave FormRESETB Pin Wave Form (VDFL)SeriesPIN NAMELOGIC CONDITIONSH V IN >V DF +V HYS V IN L V IN <V DF H MRB>1.40V MRBL MRB<0.35V H When keeping W D >V WDH more than T WD L When keeping W D <V WDL more than T WD L → H V WDL → V WDH , T WDIN >300nsec WDH → L V WDH →V WDH , T WDIN >300nsecV IN MRB WD RESETB (*2) H HH LRepeat detect and release (H →L →H)H OpenH L → HH H or Open H → L H HLL *1 LV IN MRB WD RESETB (*3) H HH LRepeat detect and release (L →H →L)H OpenH L → HH H or Open H → L L HLL *1 HV IN WD RESETB (*2) RESET (*3) H HH L Repeat detect and release (H →L →H)Repeat detect and release (L →H →L)H OpenH L → HH H → L H L HL*1 L HV IN MRB RESETB (*2)RESET (*3)H H or Open H LH LL L H■PIN LOGIC CONDITIONSNOTE:*1: If only “V DF ” is indicated, it represents both V DFL (low when detected) and V DFH (high when detected).*2: For the details of each parameter, please see the electrical characteristics. V DF : Detect VoltageV HYS : Hysteresis RangeV WDH : WD High Level Voltage V WDL: WD Low Level Voltage T WDIN : WD Pulse Width T WD : WD Timeout Period■FUNCTION CHART●XC6103/XC61113 Series●XC6104/XC61114, XC6105/XC6115 Series●XC6106/XC61116, XC6107/XC6117 Series●XC6101/XC61111, XC6102/6112 Series*1: Including all logic of WD (WD=H, L, L →H, H →L, OPEN). *2: When the RESETB is High, the circuit is in the release state. When the RESETB is Low, the circuit is in the detection state. *3: When the RESET is High, the circuit is in the release state. When the RESET is Low, the circuit is in the detection state.■TEST CIRCUITSCircuit 1Circuit 2Circuit 3Circuit 4Series ■TEST CIRCUITS (Continued)Circuit 5Circuit 6Circuit 7■TEST CIRCUITS (Continued)Circuit 8Circuit 9Circuit 10Circuit 11Series■TYPICAL PERFORMANCE CHARACTERISTICS(1.1) Supply Current vs. Input Voltage(1.2) Supply Current vs. Input Voltage■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)(2) Detect, Release Voltage vs. Ambient Temperature(1.2) Supply Current vs. Input Voltage (Continued)Series■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (3-1) Output Voltage vs. Input Voltage (V DFL ) (3.1) Detect, Release Voltage vs. Input Voltage (V DFL )(3.2) Detect, Release Voltage vs. Input Voltage (V DFH )■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)(4) N-ch Driver Output Current vs. V DSSeries(6) P-ch Driver Output Current vs. Input Voltage 1■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)(8) Release Delay Time vs. Ambient Temperature(7) P-ch Driver Output Current vs. Input Voltage 2■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (10) Release Delay Time vs. Input Voltage(11) Watchdog Timeout Period vs. Input VoltageSeries■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)(14) MRB Low Level Voltage vs. Ambient Temperature(15) MRB High Level Voltage vs. Ambient Temperature* ‘X’ represents both ‘0’ and ‘1’. (ex. XC61X1⇒XC6101 and XC6111)。

22中国处方药 第19卷 第1期·综述·沙门氏菌传播范围比较广，一般寄生在人体和动物体内，引致人畜发生伤寒、败血症、胃肠炎以及腹泻等病症。

养殖业和临床上普遍采用β-内酰胺抗菌药物治疗，效果显著，但由于长期大量不合理利用该类抗菌药物，耐药性问题不断加重，已成为学术界的重要课题。

β-内酰胺抗菌药物是指在化学结构中包含β-内酰胺环的一类抗生素，常见的药物主要包括青霉素以及头孢菌素等，其中青霉素是在1929年被发现的，属于临床最早使用的一种β-内酰胺抗菌药物，而头孢菌素是在1945年被发现的，这两种药物是β-内酰胺类抗生素的代表药物，对保证临床治疗效果起到一定的帮助。

此外，针对β-内酰胺类抗生素开展的一系列研究试验认为，可应用单环内酰胺类、碳青霉烯等药物到临床实践中，这些药物具有杀菌活性强、毒性小、适应证广、临床疗效显著等特点。

1 沙门氏菌研究进展1.1 沙门氏菌概述沙门氏菌的名称是为纪念美国兽医丹尼尔 E 沙门得来的，早在1885年，兽医丹尼尔 E沙门通过临床试验分离得出猪霍乱沙门氏菌，这种物质是肠杆菌科重要组成部分，属于革兰阴性杆菌的一种，在生长发育过程中不产生芽孢，也无荚膜，一般情况下，沙门氏菌大小为2.0～5.0 μm×0.7～1.5 μm，短丝状[1]。

临床上沙门氏菌可分成三类，第一类为对人致病，第二类为对动物致病，第三类对人和动物皆可致病。

对人致病的沙门氏菌主要包括伤寒沙门氏菌、肠炎沙门氏菌、鼠伤寒沙门氏杆菌、猪霍乱沙门氏菌、甲、乙、丙型副伤寒沙门氏菌等。

沙门氏菌的培养特性与埃希氏菌类似，在培养基生长较好，需在有氧以及兼性厌氧下培养，温度在37℃左右为宜，pH值在7.4～7.6之间，普通琼脂培养通常会形成大小中等、形状为S型的半透明菌落。

分离鉴定沙门氏菌时可在肠道杆菌鉴别性选择培养基上观察其形成无色菌落，这与大部分沙门氏菌菌株不发酵乳糖有关[2]。

1.2 沙门氏菌的危害沙门氏菌对β-内酰胺药物耐药性的研究进展张宏丽（天津市北辰医院临床药学，天津 300400）【摘要】沙门氏菌是动物源性细菌中常见的传染病菌之一。