spe10396
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RT9116®©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Ordering InformationNote :Richtek products are :❝ RoHS compliant and compatible with the current require-ments of IPC/JEDEC J-STD-020.❝ Suitable for use in SnPb or Pb-free soldering processes.Pin Configuration(TOP VIEW)WQFN-28L 4x510W Stereo Class-D Speaker Driver AmplifierGeneral DescriptionThe RT9116 is a 10W per channel, high efficiency Class D stereo audio amplifier for driving bridge tied load (BTL)speakers. The RT9116 can drive stereo speakers with load as low as 4Ω. Its high efficiency eliminates the need for an extra heat sink when playing music. The gain of the amplifier can be controlled by gain select pins. The outputs are fully protected against shorts to GND, PVCC, and output to output with an auto recovery feature and monitored output.The RT9116 is available in the WQFN-28L 4x5 package.Features●8V to 17V Input Supply Range❝ 10W / CH for an 8Ω Load, 13V Supply at 10%THD +N❝ 15W / CH for an 8Ω Load, 16V Supply at 10%THD +N❝ 90% Efficiency Eliminates Need for Heat Sink ●DC Detect Protection ●Filter-Less Operation●Over-Temperature Protection (OTP) with Auto Recovery Option●Surface Mount 28-Lead WQFN PackageApplications●LCD-TV ●Monitors ●Home Audio●Amusement Equipment●Electronic Music EquipmentG : Green (Halogen Free and Pb Free)0J= : Product CodeYMDNN : Date CodeBSTNL PVDDR VOUTNR BSTNR VOUTPRVOUTPL VOUTNL PVDDL L I M I T S T P LA I N N R _C T R L V C C N CB S T P RG V D D 2A V S SN C A V S SRT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Typical Application CircuitNote :RT9116Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.RT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Functional Block DiagramOUTPLOUTNL OUTPROUTNRBSTPLBSTNLBSTPR BSTNRPVDDL PVDDR AVSS PVSSOperationThe RT9116 is a dual-channel 2 x 10W efficient, Class D audio power amplifier for driving bridge-tied stereo speakers. The RT9116 uses the three-level modulation (BD model) scheme that allows operation without external LC reconstruction when the amplifier is driving an inductive load.Moreover, the built-in spread spectrum modulation can efficiently reduce EMI and save the cost of the external inductor, replaced by ferrite beads.A closed-loop modulator, which enables negative error feedback, can improve THD+N and PSRR of output signals.The RT9116 offers two selectable power limit thresholds,5W/10W under 8Ω for protecting load speakers.These two limit thresholds can be set easily by connecting two different resistors, 25k Ω/150k Ω, from the PLIMIT pin to ground.Though there is no requirement for power limit, theresistance connected from the PLIMIT pin to ground must be greater than 500k Ω.The RT9116 features over-current protection against output stage short-circuit conditions.When a short-circuit condition occurs, amplifier outputs will be switched to a Hi-Z state, and the short-circuit protection latch will be triggered. Once the short-circuit condition is removed, the RT9116 will be automatically recovered.The RT9116 can drive stereo speakers as low as 4Ω. The high efficiency of the RT9116, 90%, eliminates the need for an external heat sink when playing music.RT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Electrical CharacteristicsAbsolute Maximum Ratings (Note 1)●Supply Voltage, PVDDL, PVDDR, AVCC ----------------------------------------------------------------- −0.3V to 21V●Input Voltage, EN, GAIN -------------------------------------------------------------------------------------- −0.3V to (PVDDx + 0.3V)●Output Voltage, OUTPL,OUTPR,OUTNL,OUTNR ------------------------------------------------------- −0.3V to (PVDDx + 0.3V)●Bootstrap Voltage, BSTPL,BSTPR,BSTNL,BSTNR ----------------------------------------------------−0.3V to (PVDDx + 6V)●Other Pins--------------------------------------------------------------------------------------------------------−0.3V to (GVDD + 0.3V)●Power Dissipation, P D @ T A = 25°CWQFN-28L 4x5------------------------------------------------------------------------------------------------- 3.64W ●Package Thermal Resistance (Note 2)WQFN-28L 4x5, θJA -------------------------------------------------------------------------------------------- 27.4°C/W WQFN-28L 4x5, θJC ------------------------------------------------------------------------------------------- 2°C/W ●Lead Temperature (Soldering, 10 sec.)-------------------------------------------------------------------- 260°C ●Junction T emperature ------------------------------------------------------------------------------------------ 150°C●Storage T emperature Range --------------------------------------------------------------------------------- −65°C to 150°C ●ESD Susceptibility (Note 3)HBM (Human Body Model)----------------------------------------------------------------------------------- 2kVRecommended Operating Conditions (Note 4)●Supply Input Voltage, PVDDL, PVDDR, AVCC ---------------------------------------------------------- 8V to 17V ●Min. SPK load in BTL mode, Rspk (BTL)---------------------------------------------------------------- 4Ω●Junction T emperature Range --------------------------------------------------------------------------------- −40°C to 125°C ●Ambient T emperature Range --------------------------------------------------------------------------------- −40°C to 85°CRT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Note 1. Stresses beyond those listed “Absolute Maximum Ratings ” may cause permanent damage to the device. These arestress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability.Note 2. θJA is measured under natural convection (still air) at T A = 25°C with the component mounted on a high effective-thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard. θJC is measured at the exposed pad of the package.Note 3. Devices are ESD sensitive. Handling precaution is recommended.Note 4. The device is not guaranteed to function outside its operating conditions.RT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Output Power vs. Supply Voltage0.02.55.07.510.012.515.017.520.022.525.067891011121314151617181920Supply Voltage (V)O u t p u t P o w e r (W )Efficiency vs. Output Power0102030405060708090100012345678910Output Power (W)E f f i c i e n c y (%)Typical Operating CharacteristicsPVCC = 12V, R L = 8Ω, Gain = 26dBPVCC = 12V, RL = 8Ω, Gain = 26dB1kHz 20Hz 10kHz0.5W 2.5W 5WFrequency (Hz)0-10-20-30-40-50-60-70-80-90-100PVCC = 12V, R L = 8Ω, Gain = 26dB, Po = 1WC r o s s t a l k (d B )20 50 100 200 500 1k 2k 5k 10k 20k R to L L to RFrequency (Hz)40383634323028262422201816141210PVCC = 12V, R L = 8Ω, Gain = 26dB, Po = 1Wd B V (d B )20 50 100 200 500 1k 2k 5k 10k 20kRT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Application InformationGVDD SupplyThe GVDD is used to supply the Gate Drivers for the output full bridge transistors. Connect a 1μF capacitor from this pin to ground for good bypass. The typical GVDD output voltage is 5V.Amplifier Gain SettingThe gain of the RT9116 amplifier can be set by one input terminals, GAIN shown as Table 1.The gain setting is realized by changing the taps on the input resistors and feedback resistors inside the amplifier.This causes the input impedance (ZI) to be dependent on the gain setting. The actual gain settings are controlled by the ratios of the resistors, so the gain variation from part-to-part is small. However, the input impedance from part-to-part at the same gain may shift by ±20% due to shifts in the actual resistance of the input resistors.Table 1. Gain SettingEN OperationThe RT9116 employs a shutdown mode operation designed to reduce supply current (ICC) to the absolute minimum level for power saving. The EN input terminal should be held high (see specification table for trip point) in normal operation. Pulling EN low causes the outputs to mute and the amplifier to enter a low current state. Leaving EN floating will cause the amplifier operation to be unpredictable. Never leave EN pin unconnected. For the best power-off pop performance, turn off the amplifier in the shutdown mode prior to removing the power supply voltage.Over-Current Protection (OCP)The RT9116 provides OCP function to prevent the device from damages during overload or short-circuit conditions.The current are detected by an internal sensing circuit.Once overload happens, the OCP function is designed to operate in auto-recovery mode.DC Detect ProtectionRT9116 has circuitry which will protect the speakers from DC current which might occur due to defective capacitors on the input or shorts on the printed circuit board at the inputs. To clear the DC Detect it is necessary to cycle the PVCC supply.ADC Detect Fault is issued when the output differential duty-cycle of either channel exceeds 18% (for example,+59%, −41%) for more than 290 msec at the same polarity.This feature protects the speaker from large DC currents or AC currents less than 4Hz. To avoid nuisance faultsdue to the DC detect circuit, hold the SD pin low at power-up until the signals at the inputs are stable. Also, take care to match the impedance seen at the positive andnegative inputs to avoid nuisance DC detect faults.Under-Voltage Protection (UVP)The RT9116 monitors the voltage on PVDD voltage threshold. When the voltage on PVDDL and PVDDR pin falls below the under voltage threshold, 7V (typ.), the UVP circuit turns off the output immediately and operates in cycle by cycle auto-recovery mode.Over-Voltage Protection (OVP)The RT9116 monitors the voltage on PVDD voltage threshold. When the voltage on PVDDL and PVDDR pin rise behind the over voltage threshold, 15V (typ.), the OVP circuit turns off the output immediately and operates in cycle by cycle auto-recovery mode.Over-Temperature Protection (OTP)The OTP prevents damage to the device when the internal die temperature exceeds 170°C. There is a ±15°C tolerance on this trip point from device to device. Once the die temperature exceeds the OTP threshold, the device entersRT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.into the shutdown state and the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die is reduced by 15°C. The device begins normal operation at this point with no external system interaction.Power-On/Off SequenceUse the following sequence to power on the device❝PVCC power supply ready.Past EN = 1 (EN pin goes high)Figure 1. Power On SequenceFigure 2. Power Off SequenceUse the following sequence to power off the device ❝EN = 0 (EN pin goes Low) Past PVCC power supply shutdownThermal ConsiderationsThe junction temperature should never exceed the absolute maximum junction temperature T J(MAX), listed under Absolute Maximum Ratings, to avoid permanent damage to the device. The maximum allowable power dissipation depends on the thermal resistance of the IC package, the PCB layout, the rate of surrounding airflow,and the difference between the junction and ambient temperatures. The maximum power dissipation can be calculated using the following formula :P D(MAX) = (T J(MAX) − T A ) / θJAwhere T J(MAX) is the maximum junction temperature, T A is the ambient temperature, and θJA is the junction-to-ambient thermal resistance.For continuous operation, the maximum operating junction temperature indicated under Recommended Operating Conditions is 125°C. The junction-to-ambient thermal resistance, θJA , is highly package dependent. For a WQFN-28L 4x5 package, the thermal resistance, θJA , is 27.4°C/W on a standard JEDEC 51-7 high effective-thermal-conductivity four-layer test board. The maximum power dissipation at T A = 25°C can be calculated as below :P D(MAX) = (125°C − 25°C) / (27.4°C/W) = 3.64W for a WQFN-28L 4x5 package.The maximum power dissipation depends on the operating ambient temperature for the fixed T J(MAX) and the thermal resistance, θJA . The derating curves in Figur e 3 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation.Power LimitThe voltage at the PLIMIT pin can used to limit the power to levels below that which is possible based on the supply rail. Add a resistor (Table 2) to ground set the voltage at the PLIMIT pin. Also add a 1μF capacitor from the PLIMIT pin to ground. The PLIMIT circuit sets a limit on the output Power.PVCCENPVCCENFigure 3. Derating Curve of Maximum Power Dissipation0.00.40.81.21.62.02.42.83.23.64.0255075100125Ambient Temperature (°C)M a x i m u m P o w e r D i s s i p a t i o n (W )RT9116©Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Figure 4. PCB Layout GuideLayout ConsiderationsFor the best performance of the RT9116, the below PCB layout guidelines must be strictly followed.Place the decoupling capacitors as close as possible to the AVCC, PVDDL, PVDDR and GND pins. For achieving a good quality, consider adding a small, good performance low ESR ceramic capacitor between 220pF and 1000pF and a larger mid-frequency capacitor between 0.1μF and 1μF to the PVDD pins of the chip. The traces of (LINP &LINN, RINP & RINN) and (OUTPL & OUTNL, OUTPR &OUTNR) should be kept equal width and length respectively. The thermal pad must be soldered to the PCB for proper thermal performance and optimal reliability.The dimensions of the thermal pad and thermal land should be larger for application. The vias should connect to a solid copper plane, either on an internal layer or on the bottom layer of the PCB.Audio InputNote : The configuration of the Pin #1 identifier is optional,W-Type 28L QFN 4x5 PackageRichtek Technology Corporation14F, No. 8, Tai Yuen 1st Street, Chupei CityHsinchu, Taiwan, R.O.C.Tel: (8863)5526789Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.DS9116-00 November 11。
LT3496EUFD DESCRIPTIONWARNING!Do not look directly at operating LED. This circuit produces light that can damage eyes.Demonstration circuit 986 is a Triple Step-Dow n LED Driver f eaturing the LT3496EUFD. The LT3496 is a triple output DC/DC converter designed to operate as current sources f or driving high current LEDs. On the demo board, the def ault current f or each output chan-nel is 500mA. Setting CTRL voltage to be less than 1V w ill control the current sense voltage to be one-tenth of CTRL voltage, theref ore, reduce the LED current. The output current should not exceed the rated cur-rent of the LEDs used. The LED current thermal de-rating should be considered to protect the LEDs. The maximum voltage of an LED string the demo board can drive is limited by the duty cycle and the input voltage of the LT3496. The demo board def ault sw itching f requency is 2.1M Hz. At this f requency, the maximum duty cycle is 70% (M IN). Low er the sw itch-ing f requency results in higher maximum duty cycle.The maximum pow er input voltage (PV IN ) is 45V. As aresult, each channel of the demo board can drive up to ~31V total LED voltage.Adj ustable sw itching f requency allow s optimization of the ef f iciency and the external component size. At 2.1M Hz, 93% ef f iciency can be achieved at 500mA w ith minimum solution size.Each of the three regulators on the demo board is in-dependently operated. The PWM dimming f eature of the LT3496 allow s True Color PWM dimming w ith the dimming ratio of 5000:1. Additional analog dimming is possible.The LT3476 datasheet gives complete description of the part, operation and application inf ormation. The datasheet must be read in conj unction w ith this quick start guide f or w orking on or modif ying the demo cir-cuit 986.Design f iles f or this circuit board are available. Call the LTC f actory., LTC and LT are registered trademarks of Linear Technology Corporation.PERF ORM A NCE SU M M A RY Specif ications are at TA = 25°CSYM BOL PARAM ETERCONDI TI ONSM I N TYP M AXUNI TSPV IN Pow er Input Supply *45 V V IN Chip Bias Input Supply **3 5.5 V V LED Output LED Voltage, per Output PV IN = 45V, I LED = 500mA, Fsw =2.1M Hz 31 V I LED Output LED Current, per Output485 500 515 mA F SWSw itching Frequency FADJ=VREF1.92.1 2.3 M Hz ηConversion Ef f iciencyI LED = 500mA, PVIN=33V, VIN=3.3V, 10 Red LEDs 93 %P OUT M aximum Total Output Pow er I LED = 500mA45 WPWM DPWM Dimming RatioPWM Frequency = 100Hz , PV IN =33V, V IN =3.3V, 3 White LEDs at 300mA, 2.1M Hz5000:1* 45V is the absolute maximum rating of the LT3496. This rating should not be exceeded under any condition. ** V IN of the demo board is limited by the choice of the input capacitor. The LT3496 input range is 3V-30V w ith transient protection to 40V.DEMO CIRCUIT 986Q UICK S TA RT G UIDEL T3496EUF DTrip le S te p -Do w n L ED Driv e rLT3496EUFDQ U ICK STA RT PROCEDU REDemonstration circuit 986 is easy to set up to evaluate the perf ormance of the LT3496EUFD. Ref er to Figure 1 f or proper measurement equipment setup and f ollow the procedure below:1.With pow er of f, connect an input pow er supply to V IN and GND. To achieve highest ef f iciency, a low voltage supply, such as 3.3V or 5V, is recom-mended.2.With pow er of f, connect a second input pow er sup-ply to PV IN and GND. The PV IN absolute maximum rating is 45V.3.If an output channel n is not used, the PWM n should be tied to GND.4.With pow er of f, connect as LED string to an output channel interested. Connect the anode of the f irstLED to the LED n+. Connect the cathode of the last LED to the LED n-. All three channels can operate simultaneously or individually.5.Turn on PV IN pow er supply.6.Turn on V IN pow er supply.7.Check f or the proper LED current and LED string voltage.NOTE.If there is no output, turn of f the pow er supplies. Check allconnections.8.Once the proper output current/voltage are estab-lished, adj ust the parameters w ithin the operating range and observe the output current regulation, ef-f iciency and other parameters.9.To observe PWM dimming, turn of f all pow er sup-plies. Connect the PWM n to a pulse generator. Then repeat step 5 – 8.LT3496EUFDFigure 1.Proper M easurem ent Equipm ent SetupLT3496EUFD。
tef6686的使用手册tef6686的使用手册一、简介1.1 tef6686概述tef6686是一款高性能、多功能的无线收音机芯片,广泛应用于汽车、家庭音响和便携式收音机等产品中。
该芯片具备强大的接收能力和先进的解调技术,能够接收并播放AM、FM、SW和DAB/DAB+等多种广播频段的节目。
1.2 产品特点- 高接收灵敏度和低噪声特性,保证了音频质量的高保真度。
- 内置多种解调方式,可适应不同频段和编码方式的广播信号。
- 支持数字音频输出,可与其他音频系统进行连接。
- 集成了人机交互接口,操作简单方便。
- 具备数据接口,可与其他外部设备进行数据交互。
1.3 规格参数- 接收频率范围:AM 520-1710kHz,FM 87-108MHz,SW 4.75-21.85MHz,DAB/DAB+ 174-240MHz。
- 输入电压:3.3V。
- 电源消耗:低于100mA。
- 输出音频功率:2.5W。
二、使用方法2.1 连接电源将tef6686芯片与电源进行连接,确保输入电压为3.3V,并控制电源消耗低于100mA。
2.2 调节接收频率根据需要选择收听的频段,如AM、FM、SW或DAB/DAB+,利用人机交互接口或数据接口对接收频率进行调节。
2.3 解调广播信号根据收听的广播频段选择对应的解调方式,如AM、FM、SW或DAB/DAB+,通过tef6686芯片的解调功能进行解码。
2.4 连接音频输出将tef6686芯片的音频输出与其他音频系统进行连接,如功放、扬声器或耳机,以实现音频播放。
2.5 扩展功能根据需要,通过数据接口与其他外部设备进行交互,如调节音量、选择节目、保存频道等功能。
三、观点和理解tef6686作为一款优秀的无线收音机芯片,具备广泛的应用前景。
它的高接收灵敏度和低噪声特性,能够保证音频质量的高保真度,使得用户可以享受到高品质的音乐和广播节目。
tef6686支持多种解调方式,可以适应不同频段和编码方式的广播信号,大大提高了收听的灵活性和多样性。
e96数字代码与英文字母混合标准法一、概述e96数字代码与英文字母混合标准法是一种用于表达电阻和电容值的标准表示方法。
它包括三个部分:第一个部分是一个大写字母 "E",代表指数;第二个部分是一个两位的数字代码,代表数量级;第三个部分是一个大写字母 "R" 或 "C",分别代表电阻和电容。
这种表示方法具有一定的规范性和通用性,能够满足不同行业对电阻和电容值表示的需求。
二、e96数字代码部分e96数字代码部分由两位数字组成,分别表示数量级。
它包括了96个数值,范围从10^0到10^2。
这种编码方式能够满足不同精度要求的电阻和电容值的表示。
当需要表示一个100欧姆的电阻时,可以用数字代码50来表示,10^2即表示100欧姆。
同样,当需要表示一个0.1微法的电容时,可以用数字代码50来表示,10^-1即表示0.1微法。
三、英文字母部分英文字母部分分为 "R" 和 "C" 两种,分别代表电阻和电容。
这种表示方法简洁明了,能够清晰地表示器件的类型和特性。
在实际应用中,电子工程师和电路设计师常常使用这种表示方法来标注电子元器件的数值。
四、数字代码与字母混合表示示例以电阻为例,当需要表示一个47千欧姆的电阻时,可以用数字代码66和字母 "R" 来表示,即为66R。
同样,当需要表示一个0.022微法的电容时,可以用数字代码22和字母 "C" 来表示,即为22C。
五、e96数字代码与英文字母混合标准法的优势1. 规范性: e96数字代码与英文字母混合标准法具有一定的规范性,能够满足不同行业对电阻和电容值表示的需求。
2. 通用性: 这种表示方法在全球范围内得到广泛应用,能够满足不同国家和地区对电子元器件数值表示的要求。
3. 简洁明了: 这种表示方法简洁明了,能够清晰地表示器件的类型和特性。
cre6559sf规格书全文共四篇示例,供读者参考第一篇示例:CRE6559SF规格书是一种用于汽车制造和改装的产品规范文档,它包含了该产品的所有技术要求、功能描述、性能参数等详细信息。
本文将对CRE6559SF规格书进行详细的介绍和解读。
一、产品名称CRE6559SF是一款用于汽车电子系统的集成芯片,主要用于车载娱乐、导航、通信等功能。
二、产品参数1. 尺寸:10mm*10mm*1mm2. 工作电压:3.3V3. 工作频率:1GHz4. 接口:SPI、I2C5. 温度范围:-40℃~85℃6. 存储空间:128MB7. 芯片材质:硅8. 包装形式:BGA封装三、主要功能1. 视频解码:支持多种视频格式的解码,包括MPEG4、H.264等。
2. 音频解码:支持多种音频格式的解码,包括MP3、AAC等。
3. 蓝牙通讯:支持蓝牙通讯功能,可与手机、耳机等设备进行无线通讯。
4. GPS导航:支持GPS导航功能,可以实现车辆的定位、导航等功能。
5. USB接口:支持USB接口,可以接入U盘、移动硬盘等外部设备。
6. 触摸屏控制:支持触摸屏控制功能,可以实现手指操作、手势识别等。
四、性能参数1. 工作稳定性:长时间稳定运行,无死机现象。
2. 响应速度:快速响应用户操作,流畅无卡顿。
3. 通信距离:蓝牙通讯距离达到10米。
4. 定位准确性:GPS导航定位准确性小于5米。
5. 视频播放质量:支持1080P高清视频播放。
五、其他特性1. 低功耗设计:低功耗设计,节能环保。
2. 抗干扰能力:具有很强的抗干扰能力,不受外界干扰。
3. 易于集成:设计紧凑,易于集成到汽车电子系统中。
4. 抗震抗震:具有良好的抗震抗震性能,适用于汽车行驶环境。
第二篇示例:CRE6559SF规格书一、产品概述CRE6559SF是一款全新的智能家居设备,旨在提供更便捷、更智能的生活体验。
它采用最先进的人工智能技术和网络连接技术,能够实现智能控制、远程控制和语音控制等功能,为用户带来更加便捷、舒适的居家生活。
【方案介貂】本方案采用MTK3360/AC8317硬件平台,单块核心板集成了UI、GPS、DVD、视频解码、蓝牙、屏驱动等车机的绝大部分功能,外围电路只需加上收音、功放和电源即可构成车载娱乐系统。
本文主要介绍该方案的SOC周边收音机、辅助MCU、CAN/LIN总线和音频功放的解决方案,对核心SOC方案感兴趣的用户请和品佳集团联系。
【方案特色】方案整合度高;使用NXPCarTuner收音效果好、可满足不同级别的市场需求;MCU运行速率快、外设丰富;同时汇出各器件的主要性能特点。
【系统方^m】【祝格言完明】本方案有用到相关主要器件介绍:NXP的单芯片、低中频收音方案一直走在市场的前沿。
突破性新技术的采用保证了性能、功能方面iCccrn&olurd的领先,集成度不断提高使得开发变得更为简单,PCB 空间逐步减小,整体成本也在不断降低。
如TEF668x 、TEF665x 、TEA685x 三系列收音芯片管脚兼容,性能从高到低全面覆盖,可使产品形成高中低搭配,方便客户的选择。
下面分别介绍:1.NXPTEF668x(Lithio)系歹UTEF668x 低中频调谐器高性能单芯片是单芯片无线电IC ,包括AM/FM 无线电调谐器和软件定义的无线电信号处理。
它们扩展了恩智浦半导体广泛的、行业成熟的汽车无线电单调谐器产品组合,提供出色的无线电性能、最广泛的功能和最先进的软件算法,同时优化了系统成本。
HVQFN 封装占用最小的PCB 空间,并适用于双层和多层PCB 。
无线电接收器包括最高功能集、AM/FM 前端、调谐合成器、信道过滤、FM 信道均衡、FM 多路改善、解调、FM 立体声解码、弱信号处理、噪声抑制和RDS ,并提供与DARC 解调器/解码器的接口。
功能框图:□CO DlYidersFM&PFFM tronLendTEF6G8XAM BFF AM froniendRadto ProM&singAudie □ACDig..!alrMn ^efface12sMp 证I^OuEputbufferbuff&rXTAL3sdllatorDigitalTuRiitgSYstemADC功能特点:•包含调谐器和软件定义无线电处理的免校准数字接收器•基于命令的高级用户接口,兼具高度控制灵活性和易控性。
M54/74HC690/691M54/74HC692/693March 1993HC691/6934BIT BINARY COUNTER/REGISTER (3-STATE)HC690/692DECADE COUNTER/REGISTER (3-STATE)B1R(Plastic Package)ORDER CODES :M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1RF1R(Ceramic Package)M1R(Micro Package)C1R (Chip Carrier)PIN CONNECTIONS (top view)NC =No Internal Connecti o n.HIGH SPEEDf MAX =50MHz (TYP.)at V CC =5V .LOW POWER DISSIPATION I CC =4µA (MAX.)at T A =25°C .HIGH NOISE IMMUNITYV NIH =V NIL =28%V CC (MIN.).OUTPUT DRIVE CAPABILITY 15LSTTL LOADS (for Q A to Q D )10LSTTL LOADS (for RCO).SYMMETRICAL OUTPUT IMPEDANCE I OH =I OL =6mA (MIN.)(for Q A to Q D ) I OH =I OL =4mA (MIN.)(for RCO).BALANCED PROPAGATION DELAYS t PLH =t PHL.WIDE OPERATING VOLTAGE RANGE V CC (OPR)=2V to 6V.PIN AND FUNCTION COMPATIBLE WITH LSTTL 54/74LS690/691The HC690/691/692/693are high speed CMOS COUNTER/REGISTER fabricated in silicon gate C 2MOS technology.They have the same high speed performance of LSTTL combined with true CMOS low power con-sumption.The internal circuit is composed of 3stages includ-ing buffer output,which offers high noise immunity and stable output.These devices incorporate a syn-chronous counter,four-bit D-type register,and quadrup le two-line to one-line multiplexers with three-state outputs in a single 20-pin package.The counter can be program med from the data inputs and have enable P and enable T inputs and a ripple-carry output for easy expansion.The regis-ter/counter select input,R/C,selects the counter when low or the register when high for the three-state outputs,QA,QB,QC,and QD.If the LOAD input (LOAD)is held ”L”DATA input (A-D)are loaded in to the internal counter at positive edge of counter clock input (CCK).In the counter mode,internal counter counts up at the positive of the counter clock.If the counter clear input (CCLR)is held ”L”,the internal counter is cleared (synchron-ously to the counter clock for HC692/HC693,and asynchronously for HC690/HC691).The internalDESCRIPTION1/23查询M54/74HC690供应商counter’s outputs are stored in the output register at the positive edge of the register clock (RCK).If the register clear input (RCLR)is held ”L”the register is cleared (synchronously to register clock for HC692/HC693and asynchronously for HC690/HC691).All inputs are equipped with protec-tion circuits against static discharge and transient excess voltage.INPUT AND OUTPUT EQUIVALENT CIRCUITPIN DESCRIPTIONPIN No SYMBOL NAME AND FUNCTION 3to 6A to D Data Inputs 7,14ENT,ENP Enable Inputs 15to 18QA to QD Data Outputs 1CCLR Counter Clear (Active LOW)2CCK Counter Clock11R/C Counter/Register Select 8RCLR Register Clear (Active LOW)9RCK Register Clock 19RCO Ripple Counter Output 10GND Ground (0V)20V CCPositive Supply VoltageIEC LOGIC SYMBOLSHC691HC692HC693HC690M54/M74HC690/691/692/6932/23M54/M74HC690/691/692/693TRUTH TABLEINPUTS OUTPUSFUNCTION CCLR LOAD ENP ENT CCK RCLR RCK R/C G QA QB QC QD X X X X X X X X X Z Z Z Z HIGH IMPEDANCE L X X X(*)X X L L L L L L CLEAR COUNTERH L X X X X L L a b c d LOAD COUNTERH H L X X X L L NO CHANGE NO COUNTH H X L X X L L NO CHANGE NO COUNTH H H H X X L L COUNT UP COUNT UPH X X X X X L L NO CHANGE NO COUNTX X X X X L(*)H L L L L L CLEAR REGISTER X X X X X H H L a’b’c’d’LOAD REGISTER X X X X X H H L NO CHANGE NO LOAD (*):X for HC690/691for HC692/693X:DON’T CAREZ:HIGH IMPEDANCEa-d:THE LEVEL OF STEADY STATE INPUTS AT INPUTS A THROUGHT D RESPECTIVELY.a’-d’:THE LEVEL OF STEADY STATE OUTPUTS AT INTERNAL COUNTER OUTPUTS a’throug h qd’respec tively HC690/692RCO=QA•QD•ENTHC691/693RCO=QA•QB•QC•QD•ENTBLOCK DIAGRAM3/23M54/M74HC690/691/692/693 LOGIC DIAGRAM(HC690)4/23M54/M74HC690/691/692/693 TIMING CHART(HC690)5/23M54/M74HC690/691/692/693 LOGIC DIAGRAM(HC691)6/23M54/M74HC690/691/692/693 TIMING CHART(HC691)7/23M54/M74HC690/691/692/693 LOGIC DIAGRAM(HC692)8/23M54/M74HC690/691/692/693 TIMING CHART(HC692)9/23M54/M74HC690/691/692/693 LOGIC DIAGRAM(HC693)10/23TIMING CHART(HC693)ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit V CC Supply Voltage-0.5to+7V V I DC Input Voltage-0.5to V CC+0.5V V O DC Output Voltage-0.5to V CC+0.5VI IK DC Input Diode Current±20mAI OK DC Output Diode Current±20mAI O DC Output Source Sink Current PerOutput Pin RCO±25mA QA to QD±35I CC or I GND DC V CC or Ground Current±70mAP D Power Dissipation500(*)mW T stg Storage Temperature-65to+150o C T L Lead Temperature(10sec)300o C Absolute Maximum Ratings are those values beyond whichdamage to the device may occu r.Functiona l ope ration und er these cond ition isnotimplied. (*)500mW:≅65o C derate to300mW by10mW/o C:65o C to85o CRECOMMENDED OPERATING CONDITIONSSymbol Parameter Value Unit V CC Supply Voltage2to6V V I Input Voltage0to V CC V V O Output Voltage0to V CC VT op Operating Temperature:M54HC SeriesM74HC Series -55to+125-40to+85o Co Ct r,t f Input Rise and Fall Time V CC=2V0to1000nsV CC=4.5V0to500V CC=6V0to400DC SPECIFICATIONSSymbol ParameterTest Conditions ValueUnit V CC(V)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max.V IH High Level InputVoltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.2 4.2 4.2V IL Low Level InputVoltage 2.00.50.50.5V 4.5 1.35 1.35 1.356.0 1.8 1.8 1.8V OH High LevelOutput Voltage(QA-QD)2.0V I=V IHorV ILI O=-20µA1.92.0 1.9 1.9V 4.5 4.4 4.5 4.4 4.46.0 5.9 6.0 5.9 5.94.5I O=-6.0mA 4.18 4.31 4.13 4.106.0I O=-7.8mA 5.68 5.8 5.63 5.60V OH High LevelOutput Voltage(RCO)2.0V I=V IHorV ILI O=-20µA1.92.0 1.9 1.9V 4.5 4.4 4.5 4.4 4.46.0 5.9 6.0 5.9 5.94.5I O=-4.0mA 4.18 4.31 4.13 4.106.0I O=-5.2mA 5.68 5.8 5.63 5.60V OL Low Level OutputVoltage(QA-QD)2.0V I=V IHorV ILI O=20µA0.00.10.10.1V 4.50.00.10.10.16.00.00.10.10.14.5I O=6.0mA0.170.260.370.406.0I O=7.8mA0.180.260.370.40V OL Low Level OutputVoltage(RCO)2.0V I=V IHorV ILI O=20µA0.00.10.10.1V 4.50.00.10.10.16.00.00.10.10.14.5I O=4.0mA0.170.260.370.406.0I O=5.2mA0.180.260.370.40I I Input LeakageCurrent 6.0V I=V CC or GND±0.1±1±1µAI OZ3State OutputOff State Current 6.0V I=V IH or V ILV O=V CC or GND±0.5±5.0±10µAI CC Quiescent SupplyCurrent6.0V I=V CC or GND44080µAAC ELECTRICAL CHARACTERISTICS(C L=50pF,Input t r=t f=6ns)Symbol ParameterTest Conditions ValueUnit V CC(V)C L(pF)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max.t TLH t THL Output TransitionTime(Q)2.05025607590ns4.571215196.06101315t TLH t THL Output TransitionTime(RCO)2.050307595115ns4.581519236.07131620t PLH t PHL PropagationDelay Time(CCK-Q)2.05082205255310ns4.5264151626.0223543532.015095235295255ns4.5304759716.026405060t PLH t PHL PropagationDelay Time(RCK-Q)2.05086210265315ns4.5274253636.0233645542.015099240300360ns4.5314860726.026415161t PLH t PHL PropagationDelay Time(CCK-RCO)2.05065165205250ns4.5213341506.018283543t PLH t PHL PropagationDelay Time(R/C-Q)2.05059145180220ns4.5182936446.0152531372.015072175220265ns4.5223544536.019303745t PLH t PHL PropagationDelay Time(ENT-RCO)2.05036100125150ns4.5122025306.010172126t PHL PropagationDelay Time(CCLR-Q)(for HC690/691)2.05091225280340ns 4.5294556686.0253848582.0150104255320385ns 4.5335164776.028435465t PHL PropagationDelay Time(RCLR-Q)(for HC690/691)2.05086210265315ns 4.5274253636.0233645542.0150100240300360ns 4.5314860726.026415161t PHL PropagationDelay Time(CCLR-RCO)(for HC690/691)2.05070175220265ns 4.5223544536.019303745Symbol ParameterTest Conditions ValueUnit V CC(V)C L(pF)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max.f MAX Maximum ClockFrequency 2.0504.412 3.63MHz 4.5224518156.026532118t PZL t PZH Output EnableTime2.050R L=1KΩ48120150180ns4.5152430366.0132026312.0150R L=1KΩ61150190225ns4.5193038456.017263238t PLH t PHL Output DisableTime2.050R L=1KΩ32145180220ns4.5152936446.013253137t W(H) t W(L)Minimum PulseWidth(CCK-RCK)2.050287595110ns4.571519226.06131619t W(L)Minimum PulseWidth(CCLR-RCLR)(for HC690/691)2.050407595110ns 4.581519226.07131619t s Minimum Set-upTime(LOAD,ENT,ENP)2.05068150190220ns 4.5173038446.014263237t s Minimum Set-upTime(A,B,C,D)2.05044100125145ns 4.5112025296.09172125t s Minimum Set-upTime(CCLR,RCLR)(for HC692/693)2.05044100125145ns 4.5112025296.09172125t s Minimum Set-upTime(CCK,RCK)2.05048125155180ns 4.5122531366.010212631t h Minimum HoldTime 2.050000ns 4.50006.0000t REM MinimumRemoval Time(for HC690/691)2.050253040ns 4.55686.0557C IN Input Capacitance5101010pFC PD(*)Power DissipationCapacitance for HC690/691for HC692/6937080pF(*)C PD is defined as the value of the IC’s internal equivalent capac itanc e which is calculated from the operating current con sump tion without load. (Refer to Test Circuit).Average operting current can be obtained by the following equ ation.I CC(opr)=C PD•V CC•f IN+I CCAC ELECTRICAL CHARACTERISTICS(Continued)TEST CIRCUIT I CC(Opr.)SWITCHING CHARACTERISTICS TEST WAVEFORMfor HC690/691SWITCHING CHARACTERISTICS TEST WAVEFORM(Continued)for HC692/693for ALL TYPES(Fix Maximum Count)SWITCHING CHARACTERISTICS(continued)t PLZ,t PZLThe1kΩload resistors should be connected be-tween outputs and V CC line and the50pF load ca-pacitors should be connected between outputs and GND line.All inputs except G input should be connected to V CC line or GND line such that out-puts will be in low logic level while G input is held low.t PHZ,t PZHThe1kΩload resistors and the50pF load capa-citors should be connected between each output and GND line.All inputs except G input should be connected to V CC or GND line such that output will be in high logic level while G input is held low.Plastic DIP20(0.25)MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX. a10.2540.010B 1.39 1.650.0550.065 b0.450.018b10.250.010D25.4 1.000 E8.50.335e 2.540.100e322.860.900F7.10.280 I 3.930.155 L 3.30.130Z 1.340.053P001JCeramic DIP20MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX. A250.984 B7.80.307 D 3.30.130E0.5 1.780.0200.070 e322.860.900F 2.29 2.790.0900.110 G0.40.550.0160.022 I 1.27 1.520.0500.060 L0.220.310.0090.012 M0.51 1.270.0200.050 N14°(min.),15°(max.)P7.98.130.3110.320 Q 5.710.225P057HM54/M74HC690/691/692/693SO20MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX.A 2.650.104a10.100.200.0040.007a2 2.450.096b0.350.490.0130.019b10.230.320.0090.012C0.500.020c145°(typ.)D12.6013.000.4960.512E10.0010.650.3930.419e 1.270.050e311.430.450F7.407.600.2910.299L0.50 1.270.190.050M0.750.029S8°(max.)P013L21/23M54/M74HC690/691/692/693PLCC20MECHANICAL DATAmm inch DIM.MIN.TYP.MAX.MIN.TYP.MAX.A9.7810.030.3850.395 B8.899.040.3500.356D 4.2 4.570.1650.180d1 2.540.100d20.560.022E7.378.380.2900.330e 1.270.050e3 5.080.200F0.380.015G0.1010.004 M 1.270.050M1 1.140.045P027A 22/23M54/M74HC690/691/692/693 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.©1994SGS-THOMSON Microelectronics-All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A23/23。
DESCRIPTIONThe HR8833provides a dual bridge motor driver solution for toys,printers,and other mechatronic applications.The device has two H-bridge drivers,and can drive two DC brush motors,a bipolar stepper motor,solenoids,or other inductive loads.The output driver block of each H-bridge consists of N-channel power MOSFET’s configured as an H-bridge to drive the motor windings.Each H-bridge includes circuitry to regulate or limit the winding current.Internal shutdown functions with a fault output pin are provided for over current protection,short circuit protection,under voltage lockout and overtemperature.A low-power sleep mode is also provided.The HR8833is packaged in TSSOP16with PowerPAD™,and QFN16with PAD.Another package is SOP16.APPLICATIONS●Battery-Powered Toys●POS Printers●Video Security Cameras●Office Automation Machines●Gaming Machines●RoboticsORDERING INFORMATIONPart Number PackageHR8833MTE TSSOP16with exposed thermal padHR8833SQ QFN16with exposed thermal padHR8833SP SOP16FEATURES●Dual-H-Bridge Current-Control Motor Driver●Capable of Driving Two DC Motors or One Stepper Motor ●Low MOSFET On-Resistance:HS+LS400mΩ●Output Current:TSSOP16、QFN16:1.5-A RMS per H-BridgeSOP16: 1.4-A RMS perH-Bridge●Outputs CanBe Paralleled for3-A RMS●Wide Power Supply Voltage Range:2.7V–15V●PWM Winding Current Regulation/Limiting PACKAGESOP16TSSOP16QFN16Functional Block DiagramABSOLUTE MAXIMUM RATINGS at Ta=25°CParameter Symbol Conditions Ratings UnitLoad Supply Voltage VM-0.3–16VContinuous Output Current I OUT±1.5A Peak output current I PEAK>2.5ALogic Input voltage V IN-0.7to7VSense Voltage V SENSE-0.3to0.5V Operating Ambient Temperature T A Range S-20to85°C Maximum Junction T J(max)150°CStorage Temperature T stg-55to150°C RECOMMENDED OPERATING CONDITIONS at Ta=25°CMin NOM Max Unit Load Supply Voltage Range VM 2.7-15VLogic Input Voltage Range VIN0- 5.75VContinuous RMS or DC output current per bridge IOUTTSSOP、QFN 0 1.5AIOUTSOP0 1.4NOTE:1.Load Supply Voltage Range:HR8833can be powered with a supply voltage from2.7to15V forstep motor.When DC motor,you should keep the load supply voltage below10.8V.2.Take care the distinguish of PIN between package.ELECTRICAL CHARACTERISTICS at Ta=25°C,VM=5VPARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLYIVM VM operating supply current VM=5V,xIN1=0V,xIN2=0V 1.73mA IVMQ VM sleep mode supply current VM=5V 1.6 2.5uA VUVLO VM undervoltage lockout voltage VM falling 2.6V VHYS VM undervoltage lockout hysteresis90mV LOGIC-LEVEL INPUTSVIL Input low voltage nSLEEP0.5VAll other pins0.7VIH Input High voltage nSLEEP 2.5VAll other pins2VHYS Input hysteresis0.4V RPD Input pull-down resistance nSLEEP500kΩAll except nSLEEP150IIL Input low current VIN=01uA IIH Input high current VIN=3.3V,nSLEEP 6.613uAVIN=3.3V,all except nSLEEP16.533tDEG Input deglitch time450ns nFAULT OUTPUT(OPEN-DRAIN OUTPUT)VOL Output low voltage IO=5mA0.5V IOH Output high leakage current VO=3.3V1uA H-BRIDGE FETSRDS(ON)HS FET on resistance VM=5V,I O=500mA200mΩVM=2.7V,I O=500mA250LS FET on resistance VM=5V,I O=500mA180VM=2.7V,I O=500mA220IOFF IOFF VM=5V,VOUT=0V-11uAMOTOR DRIVERfPWM Current control PWM frequency Internal PWM frequency50kHz tR Rise time VM=5V,16Ωto GND,10%to90%240ns tF Fall time VM=5V,16Ωto GND,10%to90%200ns tPROP Propagation delay INx to OUTx VM=5V0.9us tDEAD Dead time VM=5V340ns PROTECTION CIRCUITSIOCP Overcurrent protection trip level 2.5A tDEG OCP Deglitch time 2.25us tOCP Overcurrent protection period 1.35ms tTSD Thermal shutdown temperature Die temperature150160180℃CURRENT CONTROLVTRIP xISEN trip voltage160200240mV tBLANK Current sense blanking time 2.6us SLEEP MODEtWAKE Startup time nSLEEP inactive high to H-bridge on0.21msFUNCTIONAL DESCRIPTIONThe HR8833device is an integrated motor driver solution for brushed DC or bipolar stepper motors.The device integrates two NMOS H-bridges and current regulation circuitry.The HR8833can be powered with a supply voltage from2.7to12.8V and can provide an output current up to1.5A RMS.A simple PWM interface allows easy interfacing to the controller circuit.The current regulation is a20-μs fixed off-time slow decay.The device includes a low-power sleep mode,which lets the system save power when not driving the motor. PWM Motor DriversHR8833contains two identical H-bridge motor drivers with current-control PWM circuitry.A block diagram of the circuitry is shown below:H-Bridge and Current-Chopping CircuitryBridge Control and Decay ModesThe AIN1and AIN2input pins control the state of the AOUT1and AOUT2outputs;similarly,the BIN1and BIN2input pins control the state of the BOUT1and BOUT2outputs.Below table shows the logic.xIN1xIN2xOUT1xOUT2FUNCTION00Z Z Coast/fast decay01L H Reverse10H L Forward11L L Brake/slow decayH-Bridge LogicThe inputs can also be used for PWM control of the motor speed.When controlling a winding with PWM,when the drive current is interrupted,the inductive nature of the motor requires that the current must continue to flow.This is called recirculation current.To handle this recirculation current,the H-bridge can operate in two different states,fast decay or slow decay.In fast decay mode,the H-bridge is disabled and recirculation current flows through the body diodes;in slow decay,the motor winding is shorted.To PWM using fast decay,the PWM signal is applied to one xIN pin while the other is held low;to use slow decay,one xIN pin is held high.PWM Control of Motor SpeedxIN1xIN2FUNCTIONPWM0Forward PWM,fast decay1PWM Forward PWM,slow decay0PWM Reverse PWM,fast decayPWM1Reverse PWM,slow decayBelow figure shows the current paths in different drive and decay mode.Drive and Decay ModesCurrent ControlThe current through the motor windings may be limited,or controlled,by a fixed-frequency PWM current regulation,or current chopping.For DC motors,current control is used to limit the start-up and stall current of the motor.For stepper motors,current control is often used at all times.When an H-bridge is enabled,current rises through the winding at a rate dependent on the DC voltage and inductance of the winding.If the current reaches the current chopping threshold,the bridge disables the current until the beginning of the next PWM cycle.Note that immediately after the current is enabled,the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry.This blanking time is fixed at2.6μs.This blanking time also sets the minimum on time of the PWM when operating in current chopping mode.The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pins with a reference voltage.The reference voltage is fixed at200mV.The chopping current is calculated in next equation:Example:If a1-Ωsense resistor is used,the chopping current will be200mV/1Ω=200mA.Once the chopping current threshold is reached,the H-bridge switches to slow decay mode.Winding current isre-circulated by enabling both of the low-side FETs in the bridge.This state is held until the beginning of the next fixed-frequency PWM cycle.Note that if current control is not needed,the xISEN pins should be connected directly to ground.nSLEEP OperationDriving nSLEEP low will put the device into a low power sleep state.In this state,the H-bridges are disabled,the gate drive charge pump is stopped,all internal logic is reset,and all internal clocks are stopped.All inputs are ignored until nSLEEP returns inactive high.When returning from sleep mode,some time(up to1ms)needs to pass before the motor driver becomes fully operational.To make the board design simple,the nSLEEP can be pulled up to the supply (VM).It is recommended to use a pullup resistor when this is done.This resistor limits the current to the input in case VM is higher than6.5V.Internally,the nSLEEP pin has a500-kΩresistor to GND.It also has a clamping zener diode that clamps the voltage at the pin at6.5V.Currents greater than250μA can cause damage to the input structure.Hence the recommended pullup resistor would be between20kΩand75kΩ.Protection CircuitsThe HR8833is fully protected against undervoltage,overcurrent and overtemperature events.Overcurrent Protection(OCP)An analog current limit circuit on each FET limits the current through the FET by limiting the gate drive.If this analog current limit persists for longer than the OCP deglitch time,all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low.The driver will be re-enabled after the OCP retry period(tOCP)has passed.nFAULT becomes high again at this time.If the fault condition is still present,the cycle repeats.If the fault is no longer present, normal operation resumes and nFAULT remains deasserted.Please note that only the H-bridge in which the OCP is detected will be disabled while the other bridge will function normally.Overcurrent conditions are detected independently on both high and low side devices;i.e.,a short to ground, supply,or across the motor winding will all result in an overcurrent shutdown.Note that overcurrent protection does not use the current sense circuitry used for PWM current control,so functions even without presence of the xISEN resistors.Thermal Shutdown(TSD)If the die temperature exceeds safe limits,all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low.Once the die temperature has fallen to a safe level operation will automatically resume. Undervoltage Lockout(UVLO)If at any time the voltage on the VM pin falls below the undervoltage lockout threshold voltage,all circuitry in the device will be disabled,and all internal logic will be reset.Operation will resume when VM rises above the UVLO threshold.nFAULT is driven low in the event of an undervoltage condition.APPLICATIONS INFORMATIONParallel ModeThe two H-bridges in the HR8833can be connected in parallel for double the current of a single H-bridge.The internal dead time in the HR8833prevents any risk of cross-conduction(shoot-through)between the two bridges due to timing differences between the two bridges.The drawing below shows the connections.Note,below example is basis on TSSOP16package.Parallel ModeTHERMAL INFORMATIONMaximum Output CurrentIn actual operation,the maximum output current achievable with a motor driver is a function of die temperature. This in turn is greatly affected by ambient temperature and PCB design.Basically,the maximum motor current will be the amount of current that results in a power dissipation level that,along with the thermal resistance of the package and PCB,keeps the die at a low enough temperature to stay out of thermal shutdown.The dissipation ratings given in the datasheet can be used as a guide to calculate the approximate maximum power dissipation that can be expected to be possible without entering thermal shutdown for several different PCB constructions.However,for accurate data,the actual PCB design must be analyzed via measurement or thermal simulation.Thermal ProtectionThe HR8833has thermal shutdown(TSD)as described above.If the die temperature exceeds approximately 150°C,the device will be disabled until the temperature drops by45°C.Any tendency of the device to enter TSD is an indication of either excessive power dissipation,insufficient heatsinking,or too high an ambient temperature.Power DissipationPower dissipation in the HR8833is dominated by the DC power dissipated in the output FET resistance,orRDS(ON).There is additional power dissipated due to PWM switching losses,which are dependent on PWM frequency,rise and fall times,and VM supply voltages.These switching losses are typically on the order of10%to30%of the DC power dissipation.The DC power dissipation of one H-bridge can be roughly estimated by next equation:where PTOT is the total power dissipation,HS-RDS(ON)is the resistance of the high side FET,LS-RDS(ON) is the resistance of the low side FET,and IOUT(RMS)is the RMS output current being applied to the motor.Note that RDS(ON)increases with temperature,so as the device heats,the power dissipation increases.This must be taken into consideration when sizing the heatsink.HeatsinkingThe PowerPAD packages use an exposed pad to remove heat from the device.For proper operation,this pad must be thermally connected to copper on the PCB to dissipate heat.On a multi-layer PCB with a ground plane,this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane.On PCBs without internal planes,copper area can be added on either side of the PCB to dissipate heat.If the copper area is on the opposite side of the PCB from the device,thermal vias are used to transfer the heat between top and bottom layers.Layout GuidelinesBypass the VM terminal to GND using a low-ESR ceramic bypass capacitor with a recommended value of10μF rated for VM.This capacitor should be placed as close to the VM pin as possible with a thick trace or ground plane connection to the device GND pin and PowerPAD.Bypass VINT to ground with a ceramic capacitor rated6.3V.Place this bypassing capacitor as close to the pin as possible.Layout ExampleFULL STEPHALF STEPPin-out DiagramTOP VIEWTSSOP16SOP16QFN16-PPTerminal List TableNAME PIN Pin Description EXTERNAL COMPONENTSOR CONNECTIONSTSSOP SOP QFNPOWER AND GROUNDGND13111Device ground Both the GND pin and device PowerPAD must be connectedto groundPPAD---VM121610Device powersupply Connect to motor supply.A10uF(minimum)VINT14212Internal supplybypass Bypass to GND with2.2uF,6.3-V capacitorVCP11159High-side gate drivevoltage Connect a0.01uF,16V(minimum)X7R ceramic capacitor to VMCONTROLAIN116414Bridge A input1Logic input controls state of AOUT1.Internal pulldown.AIN215313Bridge A input2Logic input controls state of AOUT2.Internal pulldown.BIN19137Bridge B input1Logic input controls state of BOUT1.Internal pulldown.BIN210148Bridge B input2Logic input controls state of BOUT2.Internal pulldown. nSLEEP1515Sleep mode input Logic high to enable device,logic low to enter low-power sleep mode STATUSnFAULT8126Fault output Logic low when in fault condition(overtemp,overovercurrent) OUTPUTAISEN371Bridge A Isense Connect to current sense resistor for bridge A,or GND if currentcontrolBISEN6104Bridge B Isense Connect to current sense resistor for bridge B,or GND if currentcontrolAOUT12616Bridge A output1Connect to motor winding AAOUT2482Bridge A output2BOUT17115Bridge B output1Connect to motor winding BBOUT2593Bridge B output2TSSOP16with exposed thermal padSOP16QFN16with PADIMPORTANT NOTICE注意Jiaxing Heroic Electronic Technology Co.,Ltd(HT)reserves the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any products or services without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.嘉兴禾润电子科技有限公司(以下简称HT)保留对产品、服务、文档的任何修改、更正、提高、改善和其他改变,或停止提供任何产品和服务,并不提供任何通知的权利。
1适用范围此标准描述了车辆零件外部标记的内容及形式要求。
被归类的数据用于制造状况的归档及追踪(制造过程汇总)及/或用于制造过程内的操作指导(组装控制)。
注释此标准不适用于与以上应用场合无关的车辆零件标记。
此标准对以下人员起指导作用:—对标识详细说明的开发商;—已标识车辆零件质量的负责人;—审理及评价标识成本的经手人;—制造及对车辆零件标识的供应商;—需要事前对组件登记的复杂总成供应商;—组件登记及损耗控制流程的系列策划人。
1.1可追溯性对单独零件等级的制造状况的追踪需要一个明确的对每个零件的识别区分。
这种零件在组件目录中被定义。
按规定这种标识包括以下数据:—组件号(零件类型识别)—制造商标识—系列号(用于区分制造商的相同类别零件)此组件数据与车辆一起登记并长期存档。
它们使得精确到每辆车的特定组件的召回、保养及危害赔偿变得可能。
供货商(及制造商)必须保证,组件使用寿命(≥20年)数据清楚及确实存在。
所有制造方的组件单独信息(如被使用的原材料、零件制造商、测试结果、调校值、制造产地及生产设备)要保存并存档,使得能够满足快速及准确的对特定组件的性能,制造及材料质量进行描述的需要。
1.2操作指导B类及C类的标记除组件数据外还列有更具体的零件信息:—零件号及生产定额—供应商号码—制造日期这些数据不是为了归档,而是为了能够在制造流程中测试及保证准确组装时使用。
1.3标记类型数据编码使得在制造领域的快速及自动登记成为可能。
共分为3种类型:A类:条形码编码。
标准:有2部分组成的标签。
贴在可撕不干胶标签上,用以登记汽车测试卡。
B类:2维码编码。
标准:单个部分,固定在零件上的标签。
直接登记零件固定的标签及制造地点。
C类:通过异频雷达发射机标记。
在流程中自动登记。
A类标记(示例见附录a1至a9)是普遍的标记形式。
它满足了原有制造状态资料汇编的要求。
B类标记(示例见附录c1至c7)是未来的标记形式并为了尽快实现下列优点而应用于新一代的零件:—提供更多应用可能(组装控制);—零件表面需要更少的标签面积;—单个部分的,更廉价的标签;—更少的登记开支(不需要粘贴标签);—被损坏的密码系统仍可读(2维码的自动纠错性);—可以直接并长期储存于材料内(废止标签)注释 B类标记以车辆生产厂家具有相应的系统技术及流程组织为前提条件。
Protect It! 6-Outlet Surge Protector, 6 ft. (1.83 m)Cord, 990 Joules, 2 x USB Charging ports (2.1A),Gray HousingMODEL NUMBER:TLP606USBDescriptionTripp Lite's TLP606USB offers economical AC surge suppression for protection of workstations, desktop PCs, telecom systems and other sensitive electronics. Built-in AC surge suppression shields connected equipment from damage and performance problems due to transient surges. USB charging ports offer fast charging for smartphones, tablets, MP3 players and other portable devices. TLP606USB offers 6 total outlets, 6-ft. (1.83 m) cord, 2 USB charging ports and diagnostic LED to warn of suppressor damage. AC suppression rated at 990 joules shields equipment from surges and line noise. Attractive cool grey suppressor housing with keyhole mounting tabs offer convenient protection of desktop computerequipment and accessories. $20,000 Ultimate Lifetime Insurance (U.S., Canada, and Puerto Rico only).PLUG/OUTLETS: Input: NEMA5-15P/Output: 6 NEMA5-15R/6-ft. (1.83 m) AC line cord ELECTRICAL: 120V AC, 50/60Hz, 15A (Requires NEMA5-15R wall receptacle)FORMAT: Corded multi-outlet strip with 1 transformer spaced outletSUPPRESSION: AC: 150V RMS Clamping/990 joules/400V UL1449 3rd EditionFeatures6 outletsq 6-ft. (1.83 m) cordq 2 USB charging ports - 2.1 amp total q Surge suppression rating: 990 joules q EMI/RFI noise filteringq 15 amp resettable circuit breaker q Green protection LEDq Includes full normal mode (H-N) and common mode (N-G/H-G) line surge suppressionq Can accommodate 1 large transformer plug without covering remaining outlets, 3 total transformers q Keyhole support for wall mounting q Lighted power switchq $20,000 Ultimate Lifetime Insurance (U.S., Canada, and Puerto Rico only)q Automatic shutoff permanently cuts power to outlets if protection circuit is incapacitated, preventing equipment damage and indicating replacement is requiredqHighlights6 outlet / 6-ft. cord q 990 joule ratingq 2.1 amp dual port USB chargerqPackage IncludesTLP606USB surge suppressor q Instruction manual with warranty informationqSpecifications© 2023 Eaton. All Rights Reserved. Eaton is a registered trademark. All other trademarks are the property of their respective owners.。
Eaton 120663Eaton Moeller series xPole - mRB4/6 RCBO - residual-current circuit breaker with overcurrent protection. RCD/MCB, 13A, 100mA, C-LS-Char, 3N pole, FI-Char: AGeneral specificationsEaton Moeller series xPole - mRB4/6 RCBO - residual-current circuit breaker with overcurrent protection120663401508118493480 mm 75.5 mm 70 mm 0.446 kg CE Marked RoHS conformCE mRB6-13/3N/C/01-AProduct NameCatalog Number EANProduct Length/Depth Product Height Product Width Product Weight Compliances Certifications Model CodeSwitchgear for residential and commercial applicationsmRB6Combined RCD/MCB devicesSwitchgear for industrial and advanced commercial applications Three-pole + N44CC13 A6 - 25 Ampere0.1 AType A, pulse-current sensitiveRCBO AC400 V230 V / 400 V400 V500 V4 kV30, 100, 300 MilliAmpere Partly surge-proof, 250 A 50 HzA6 kA6 kA6 kA0.5 x I∆n0 kA6 kA6 kAApplicationProduct rangeBasic functionProduct applicationNumber of polesNumber of poles (protected) Number of poles (total) Tripping characteristic Release characteristicRated currentRated current of product range Fault current rating Sensitivity typeType Voltage typeVoltage ratingVoltage rating at ACRated operational voltage (Ue) - maxRated insulation voltage (Ui)Rated impulse withstand voltage (Uimp)Rated fault currents of product rangeImpulse withstand currentFrequency ratingLeakage current typeRated switching capacityRated switching capacity (IEC/EN 60947-2)Rated switching capacity (IEC/EN 61009)Rated non-tripping currentRated short-circuit breaking capacity (EN 60947-2) Rated short-circuit breaking capacity (EN 61009) Rated short-circuit breaking capacity (EN 61009-1) Rated short-circuit breaking capacity (IEC 60947-2)0 kA 0.25 kAUndelayed Non-delayed 100 Ampere gL 3III245 mm480 mm70 mmTri-stable slide catch - enables removal from existing busbar combinationIP20IP40Twin-purpose1 - 25 Square MillimeterBusbar tag shroud to VBG41 mm²25 mm²1 mm²25 mm²2 mmIEC 68-2: 25 °C - 55 °C at 90 % - 95 % humiditySurge current capacityDisconnection characteristic TrippingBack-up fuseSelectivity class Overvoltage category Pollution degree FrameWidth in number of modular spacingsDevice heightBuilt-in depthMounting styleDegree of protectionDegree of protection (built in)Terminals (top and bottom)Solid terminal capacitiesTerminal protectionConnectable conductor cross section (solid-core) - min Connectable conductor cross section (solid-core) - max Connectable conductor cross section (multi-wired) - min Connectable conductor cross section (multi-wired) - max Material thicknessClimatic proofing13 A 0 W 9.4 W 45 W 0 W -25 °C 40 °C Meets the product standard's requirements.Meets the product standard's requirements.Meets the product standard's requirements.Meets the product standard's requirements.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.Rated operational current for specified heat dissipation (In) Heat dissipation per pole, current-dependentEquipment heat dissipation, current-dependentStatic heat dissipation, non-current-dependentHeat dissipation capacityAmbient operating temperature - minAmbient operating temperature - max 10.2.2 Corrosion resistance10.2.3.1 Verification of thermal stability of enclosures10.2.3.2 Verification of resistance of insulating materials to normal heat10.2.3.3 Resist. of insul. mat. to abnormal heat/fire by internal elect. effects10.2.4 Resistance to ultra-violet (UV) radiation10.2.5 Lifting10.2.6 Mechanical impact10.2.7 Inscriptions10.3 Degree of protection of assemblies10.4 Clearances and creepage distances10.5 Protection against electric shock10.6 Incorporation of switching devices and components10.7 Internal electrical circuits and connections10.8 Connections for external conductors10.9.2 Power-frequency electric strengthIs the panel builder's responsibility.Is the panel builder's responsibility.The panel builder is responsible for the temperature rise calculation. Eaton will provide heat dissipation data for the devices.Is the panel builder's responsibility. The specifications for the switchgear must be observed.Is the panel builder's responsibility. The specifications for the switchgear must be observed.The device meets the requirements, provided the information in the instruction leaflet (IL) is observed.3Concurrently switching N-neutralIEC/EN 61009eaton-xpole-mrb6-rcbo-catalog-ca019057en-en-us.pdfeaton-xpole-mrb4-rcbo-catalog-ca019058en-en-us.pdfDA-DC-03_mRB-3N03_mRB-3N_28111803_mRB-3p_200416eaton-xeffect-frbm6/m-characteristic-curve-002.jpgeaton-mcb-xpole-mrb4-6-characteristic-curve.epsDimensions xPole mRB4/mRB6 3Neaton-xeffect-frbm6/m-dimensions-004.jpgeaton-mcb-xpole-mrb4-6-dimensions.eps3D Drawing xPole mRB4/mRB6 3NIL019140ZUeaton-xpole-combined-mcb-rcd-device-rcbo-packaging-manual-multilingual.pdfDA-CD-faz_3pn_4pDA-CS-faz_3pn_4pCharacteristics xPole mRB4/mRB6 3Neaton-xeffect-frbm6/m-wiring-diagram-002.jpgContact Sequence xPole mRB4/mRB6 3N10.9.3 Impulse withstand voltage10.9.4 Testing of enclosures made of insulating material 10.10 Temperature rise10.11 Short-circuit rating10.12 Electromagnetic compatibility10.13 Mechanical function Current limiting class FeaturesStandards Catalogues Certification reports Characteristic curve DrawingsInstallation instructions mCAD modelTime/current curves Wiring diagramsEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All rights reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmediaeaton-mcb-xpole-mrb4-6-wiring-diagram.eps。
1DS9026-07 September 2011Ordering InformationNote :Richtek products are :} RoHS compliant and compatible with the current require-ments of IPC/JEDEC J-STD-020.} Suitable for use in SnPb or Pb-free soldering processes.DDR Termination RegulatorGeneral DescriptionRT9026 is a 3A sink/source tracking termination regulator.It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient response and only requires 20µF of ceramic output capacitance. The RT9026 supports remote sensing functions and all features required to power the DDRI/II/III and low-power DDRIII/DDRIV VTT bus termination according to the JEDEC specification. In addition, the RT9026 includes integrated sleep-state controls placing VTT in High-Z in S3 (suspend to RAM) and soft-off for VTT and VTTREF in S5 (shutdown). The RT9026 is available in the thermal efficient package SOP-8 (Exposed Pad),MSOP-10 (Exposed Pad) and WDFN-10L 3x3.FeatureslSupport DDRI, DDRII, DDRIII, Low-Power DDRIII and DDRIV Requirement} Source/Sink 3A for DDRI and DDRII } Source/Sink 2A for DDRIII} Source/Sink 1.5A for Low-Power DDRIII } Source/Sink 1.2A for Low-Power DDRIV l Input Voltage Range : 3.15V to 5.5V l VLDOIN Voltage Range : 1.2V to 3.3Vl Requires Only 20µF Ceramic Output Capacitance l Supports High-Z in S3 and Soft-Off in S5lIntegrated Divider Tracks 1/2 VDDQSNS for Both VTT and VTTREFl Remote Sensing (VTTSNS)l ±20mV Accuracy for VTT and VTTREFl10mA Buffered Reference (Sourcing/Sinking)(VTTREF)l Built-In Soft-Startl Over Current Protectionl Thermal Shutdown ProtectionlSOP-8 (Exposed Pad), MSOP-10 (Exposed Pad) and 10-Lead WDFN PackagelRoHS Compliant and Halogen FreeApplicationslDDRI/II/III and Low-Power DDRIII/DDRIV Memory T ermination l SSTL-2, SSTL-18lHSTL TerminationPin Configurations(TOP VIEW)MSOP-10 (Exposed Pad)SOP-8 (Exposed Pad)WDFN-10L 3x3VIN S3VDDQSNSPGND VTT S5GND VTTSNSVTTREFVLDOINGND S3VTTSNS VTTREFVTT VLDOIN VDDQSNSVINVDDQSNS PGND VTT VTTSNSVLDOINVIN S3S5GND VTTREFPackage TypeSP : SOP-8 (Exposed Pad-Option 1)FP : MSOP-10 (Exposed Pad)QW : WDFN-10L 3x3 (W-Type)RT9026Lead Plating System P : Pb FreeG : Green (Halogen Free and Pb Free)2DS9026-07 September 2011Figure 1. For SOP-8 (Exposed Pad) PackageFigure 2. For MSOP-10 (Exposed Pad) / WDFN-10L 3x3PackageTypical Application CircuitRT9026VTTREF Marking InformationRT9026PSP : Product CodeYMDNN : Date CodeRT9026PSPRT9026GSP : Product CodeYMDNN : Date CodeRT9026GSPA0- : Product CodeYMDNN : Date CodeRT9026PFPA0= : Product CodeYMDNN : Date CodeRT9026GFPE6- : Product CodeYMDNN : Date CodeRT9026PQWE6= : Product CodeYMDNN : Date CodeRT9026GQWTo be ContinuedFunction Block DiagramTable 1. S3 and S5 Control TableDS9026-07 September 34DS9026-07 September 2011 Electrical Characteristics(V IN = 5V, VLDOIN = VDDQSNS = 2.5V, C1=10µF, C2=1µF, C3=0.1µF, C4=10µFx2, T A = 25°C, S5 function only for RT9026PFPAbsolute Maximum Ratings (Note 1)l Supply Input Voltage, VIN ----------------------------------------------------------------------------------------------6V l Supply Input Voltage, VLDOIN, VDDQSNS ------------------------------------------------------------------------3.6V lPower Dissipation, P D @ T A = 25°CSOP-8 (Exposed Pad)--------------------------------------------------------------------------------------------------1.333W MSOP-10 (Exposed Pad)----------------------------------------------------------------------------------------------1.163W WDFN-10L 3x3-----------------------------------------------------------------------------------------------------------1.429WlPackage Thermal Resistance (Note 2)SOP-8 (Exposed Pad), θJA --------------------------------------------------------------------------------------------75°C/W SOP-8 (Exposed Pad), θJC --------------------------------------------------------------------------------------------28°C/W MSOP-10 (Exposed Pad), θJA ----------------------------------------------------------------------------------------86°C/W MSOP-10 (Exposed Pad), θJC ----------------------------------------------------------------------------------------30°C/W WDFN-10L 3x3, θJA ------------------------------------------------------------------------------------------------------70°C/WWDFN-10L 3x3, θJC -----------------------------------------------------------------------------------------------------8.2°C/W l Lead T emperature (Soldering, 10 sec.)------------------------------------------------------------------------------260°Cl Junction Temperature ---------------------------------------------------------------------------------------------------150°Cl Storage Temperature Range -------------------------------------------------------------------------------------------−65°C to 150°C lESD Susceptibility (Note 3)HBM (Human Body Mode)---------------------------------------------------------------------------------------------2kV MM (Machine Mode)----------------------------------------------------------------------------------------------------200VRecommended Operating Conditions (Note 4)l Supply Input Voltage, VIN ----------------------------------------------------------------------------------------------3.15V to 5.5V l Supply Input Voltage, VLDOIN, VDDQSNS ------------------------------------------------------------------------1.2V to 3.3V l Junction T emperature Range ------------------------------------------------------------------------------------------−40°C to 125°C lAmbient Temperature Range ------------------------------------------------------------------------------------------−40°C to 85°CTo be ContinuedNote 1. Stresses listed as the above“Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability.Note 2. θJA is measured in the natural convection at T A = 25°C on a high effective four-layers thermal conductivity test board of JEDEC 51-7 thermal measurement standard. The case point of θJC is on the exposed pad for SOP-8 (Exposed Pad) , MSOP-10 (Exposed Pad) and WDFN-10L 3x3 package.Note 3. Devices are ESD sensitive. Handling precaution is recommended.Note 4. The device is not guaranteed to function outside its operating conditions.DS9026-07 September 56DS9026-07 September 2011 Typical Operating CharacteristicsV DDQSNS = V LDOIN , C1 = 10μF , C2 = 1μF , C3 = 0.1μF , C4 = 10μF x 2 unless otherwise specified.0.75V TT Output Voltage vs. Temperature0.700.710.720.730.740.750.760.770.780.790.80-50-25255075100125Temperature (°C)O u t p u t V o l t a g e (V )0.675V TT Output Voltage vs. Temperature0.6250.6350.6450.6550.6650.6750.6850.6950.7050.7150.725-50-25255075100125Temperature (°C)O u t p u t V o l t a g e (V)0.6V TT Output Voltage vs. Temperature0.550.560.570.580.590.600.610.620.630.640.65-50-25255075100125Temperature (°C)O u t p u t V o l t a g e (V )1.25V TT Output Voltage vs. Temperature1.201.221.241.261.281.30-50-25255075100125Temperature (°C)O u t p u t V o l t a g e (V)0.9V TT Output Voltage vs. Temperature0.850.860.870.880.890.900.910.920.930.940.95-50-25255075100125Temperature (°C)O u t p u t V o l t a g e (V )V IN Supply Current vs. Temperature6006507007508008509009501000-50-25255075100125Temperature (°C)V I N S u p p l y C u r r e n t (µA )7Source(20mV/Div)VTT (2A/Div)V IN = 5V, V LDOIN = 1.8VSource(20mV/Div)VTT (1A/Div)V IN = 5V, V LDOIN = 1.35V8DS9026-07 September 2011 1.25V TT @ 3A Transient ResponseV TT(20mV/Div)I VTT (2A/Div)V IN = 5V, V LDOIN = 2.5VSinkTime (500μs/Div)0.9V TT @ 3A Transient ResponseSinkV TT(20mV/Div)I VTT (2A/Div)V IN = 5V, V LDOIN = 1.8VTime (500μs/Div)0.75V TT @ 2A Transient ResponseSinkV TT(20mV/Div)I VTT (1A/Div)V IN = 5V, V LDOIN = 1.5VTime (500μs/Div)0.675V TT @ 1.5A Transient ResponseSinkV TT(20mV/Div)I VTT (1A/Div)V IN = 5V, V LDOIN = 1.35VTime (400μs/Div)0.6V TTREF @ 1.2A Transient ResponseSinkV IN = 5V, V LDOIN = 1.2VTime (400μs/Div)V TT(20mV/Div)I VTT (1A/Div)0.9V TTREF @ 10mA Transient ResponseSourceV TTREF (10mV/Div)I VTTREF (10mA/Div)V IN = 5V, V LDOIN = 1.8VTime (1ms/Div)9DS9026-07 September 2011TTREF (1V/Div)(1V/Div)S3 = 0V, C3 = 1μF, S5 : Low to HighTime (10μs/Div)(5V/Div)(5V/Div)SinkTTREF (10mV/Div)VTTREF (10mA/Div)V IN = 5V, V LDOIN = 1.8VPower OffTime (1ms/Div)TTREF (1V/Div)(1V/Div)S3 = 0V, C3 = 0.1μF, S3 and S5 : High to Low(5V/Div)(5V/Div)S5S3V TTV TTREF10DS9026-07 September 2011 Application InformationRT9026 is a 3A sink/source tracking termination regulator.It is specifically designed for low-cost and low-external component count system such as notebook PC applications. The RT9026 possesses a high speed operating amplifier that provides fast load transient response and only requires a 10μF ceramic input capacitor and two 10μF ceramic output capacitor.VTTREF RegulatorVTTREF is a reference output voltage with source/sink current capability up to 10mA. To ensure stable operation 0.1μF ceramic capacitor between VTTREF and GND is recommended.S3, S5 Logic ControlThe S3 and S5 terminals should be connected to SLP_S3and SLP_S5 signals respectively. Both VTTREF and VTT are turned on at normal state (S3 = High, S5 = High). In standby state (S3 = Low, S5 = High) VTTREF is kept alive while VTT is turned off and left high impedance. Both VTT and VTTREF outputs are turned off and discharged to ground through internal MOSFETs during shutdown state (S5 = low).Capacitor SelectionGood bypassing is recommended from VLDOIN to GND to help improve AC performance. A 10μF or greater input capacitor located as close as possible to the IC is recommended. The input capacitor must be located at a distance of less than 0.5 inches from the VLDOIN pin of the IC.Adding a ceramic capacitor 1μF close to the VIN pin and it should be kept away from any parasitic impedance from the supply power.Thermal ConsiderationsFor continuous operation, do not exceed absolute maximum operation junction temperature. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient.The maximum power dissipation can be calculated by following formula :P D(MAX) = ( T J(MAX) − T A ) / θJAWhere T J(MAX) is the maximum operation junction temperature, T A is the ambient temperature and the θJA is the junction to ambient thermal resistance.For recommended operating conditions specification of the RT9026, the maximum junction temperature is 125°C.The junction to ambient thermal resistance θJA is layout dependent. The thermal resistance θJA for WDFN-10L 3x3is 70°C/W, for SOP-8 (Exposed Pad) is 75°C/W and for MSOP-10 (Exposed Pad) is 86°C/W on the standard JEDEC 51-7 four layers thermal test board. The maximum power dissipation at T A = 25°C can be calculated by following formula :P D(MAX) = (125°C − 25°C) / (70°C/W) = 1.429W for WDFN-10L 3x3 packagesP D(MAX) = (125°C − 25°C) / (75°C/W) = 1.333W for SOP-8 (Exposed Pad) packagesP D(MAX) = (125°C − 25°C) / (86°C/W) = 1.163W for MSOP-10 (Exposed Pad) packagesThe maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal resistance θJA . For RT9026 packages, the Figure 3 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed.Table 2. S3 and S5 ControlFor stable operatio n, the total capacitance of the cerarnic capcitor at the VTT output terminal must not be larger than 30μF. The RT9026 is designed sp ecifically to work with low ESR ceramic output capacitor in space saving and performance consideration. Larger output capacitance can reduce the noise and improve load transient response,stability and PSRR. The output capacitor should be located near the VTT output terminal pin as close as possible.Outline DimensionHM(Bottom of Package)8-Lead SOP (Exposed Pad) Plastic PackageInformation that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.Richtek Technology CorporationHeadquarter5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C.Tel: (8863)5526789 Fax: (8863)5526611Richtek Technology CorporationTaipei Office (Marketing)5F, No. 95, Minchiuan Road, Hsintien City Taipei County, Taiwan, R.O.C.Tel: (8862)86672399 Fax: (8862)86672377Email:*********************W-Type 10L DFN 3x3 Package。
2010BEHAVIOR OF AL-ZN-IN ANODES AT ELEVATED TEMPERATUREGRANT GIBSONGIBSON APPLIED TECHNOLOGY AND ENGINEERING, LLC16360 PARK TEN PLACE, STE 206 HOUSTON TX 77084gtgibson@ABSTRACT There has been little theoretical and experimental data on the behavior of Al-Zn-In anodes in elevatedtemperature seawater. The majority of the work was aimed at giving the cathodic protection engineer somedirection on the performance of anodes in harsh environments without discussion of the theoretical aspects ofaluminum activation and failure at elevated temperatures. A discussion of previous research is reviewed withrespect to aluminum anode performance in seawater at elevated temperatures. Experiments were conducted ona commercially available aluminum anode at 20, 40, 60, and 80 C in 3.5% NaCl. Current capacity, corrosionmorphology, and hydrogen evolution results are presented and a discussion on anode activation mechanisms isreviewed in relation to the results. This paper focuses on aluminum zinc indium activated anodes.ANODE CHEMISTRY DEVELOPMENTAs a sacrificial anode, aluminum is a very highly favored metal because it possesses a thermodynamicpotential of –1.663V SHE, a high electrochemical equivalent, low density, and a high theoretical current capacity(2980 A ⋅hr/kg). In addition, aluminum is not a precious metal making it economically feasible to use as asacrificial anode. The drawback of aluminum is that its theoretical driving potential is not realized. Aluminumadopts a potential of –700mV SCE in seawater due to the formation of a protective oxide layer 1. This potential isnot active enough to polarize steel to its protection potential. Another drawback is aluminum corrodes by pitting ina seawater environment. While most of the current produced by pitting may well be used in protection of astructure, the anode may become perforated and may lose aluminum by mechanical detachment. Thus, thecurrent capacity of the anode would be diminished.The first aluminum anodes used were binary alloys of aluminum-zinc 2,3,4 and aluminium-tin 4,5. Doremus andDavis 4 give the nominal composition of an Al-Zn alloy as: Zn, 5.0 to 6.0 weight percent; Fe, 0.17% max; Cu,0.02% max; Si, 0.10% max; and Al, remainder. It was claimed to have a capacity of 1540 to 1598 A ⋅hr/kg and anoperating potential of –1.00V Ag/AgCl. The Al-Zn anode was comparable to zinc and was commonly used as areplacement for zinc when weight considerations were paramount. Hine and Wei 5 reported an Al-Sn anode withan operating potential of -1.30V SCE, but upon coupling to a structure, the anode would become polarized tounacceptable levels. It was later found that Al-Sn anodes depended strongly on composition of material and heattreatment. With close manufacturing control, Al-Sn anodes with current capacities of 1050 A ⋅hr/kg and operatingpotentials of –1.1 to –1.2V SCE were realized. Even though these aluminum alloys gave a slight advantage overzinc, they were not readily accepted in the field because of the lack of published data on their performance.Then in 1966, Newport and Reding 6 reported the results of tests on 2500 alloys investigating the effects ofalloying aluminum with many different elements. They found that alloying with Cu and Mn resulted in a potentialmore noble than unalloyed aluminum. Zn, Cd, Mg, and Ba shifted the potential of aluminum negative direction by©2010 by NACE International. Requests for permission to publish this manuscript in any form, in part or in whole, must be in writing to NACEInternational, Publications Division, 1440 South Creek Drive, Houston, Texas 77084. The material presented and the views expressed in this paper are solely those of the author(s) and are not necessarily endorsed by the Association.Paper No.10396100 to 300mV and Ga, Hg, Sn, and In shifted the potential by 300 to 900mV. They found that thedepassivators, or activators, had some common features. The elements had low melting points, a low solubility inAl (except Zn and Mg), and most activating elements did not form intermetallic compounds with Al. Currentefficiency tests showed that none of the binary alloys possessed suitable efficiencies, but it was found that ternaryalloy compositions could greatly enhance the efficiency. Ternary alloy trials resulted in an Al-Zn-Hg alloy that had an operating potential of –1.05V SCE, a current capacity of around 2800 A⋅hr/kg, and a uniform corrosion pattern. They also stressed the control of the purity of the aluminum stock used to produce the alloys. Lowering the purityfrom 99.9% to 99.7% resulted in a loss of 25% in efficiency, but little change in operating potential. Schrieber andReding9 confirmed the laboratory results in field testing in seawater for up to 660 days.In the same month, Sakano, Toda, and Hanada7 reported on a Al-Zn-In sacrificial anode. They also stressedthe importance of purity in the aluminum stock noticing a difference in current capacity by switching from 99.99%purity to 99.85% purity. The best results for a viable anode were obtained with 99.85% purity with 0.025% In,2.52% Zn, and 0.01% Cd. The cadmium was added to soften the corrosion product and improve the corrosioncharacteristics. They do not give the preliminary results showing the effects of different alloy compositions.Since 1966, three ternary alloys have evolved namely tin8, mercury6,9, and indium7,10,11,12,13,14,15 which are allalloyed with zinc. The tin based alloys are no longer preferred because they require very accurate compositions,heat treatments, their parameters vary heavily with current density, suffer non-uniform corrosion, and adherentcorrosion products16. While mercury anodes out-perform both tin and indium anodes, they are no longer usedbecause mercury is hazardous to the environment17,18. Indium based anodes are now the preferred materialbecause they are non-hazardous, experience uniform dissolution, and are easy to manufacture.Most recently, Umay et al19 investigated the interrelation between zinc and indium in aluminum anodes.Anodes with a compositional range of zinc between 1.5% and 5.5% and indium between 0.01% and 0.04% werecast using 99.75% pure aluminum. The impurity content was 0.1% iron, 0.07% silicon, and 0.0005% copper.Figure 1 depicts the anode efficiency as a function of indium and zinc content. The graphs show that at eachzinc content there is an indium content that produces a maximum efficiency. The 1.5, 3.5, and 5.5% zinccompositions with various indium contents produce optimized efficiencies that are local and highly dependent onindium concentration. The 4.5% zinc composition with indium concentrations of 0.017% and 0.026% producesmore of a plateau at an efficiency of 82%. In terms of dissolution morphology, at low indium contents, pits werelocalized, narrow, and deep. At intermediate indium concentrations, the pits were homogeneously distributed andshallow with a smooth pit bottom. At the higher indium concentrations, pit distribution was homogeneous and pitstructure was shallow with deep intergranular corrosion at pit bottoms. The compositional limits are near those ofthe commercial anodes marketed today20, but with slight differences. The difference in anode performance by Umay et al and present commercial anodes can be attributed to the impurity of the stock material.The realization of high performance anodes depends highly on the purity of the aluminum stock with indiumand zinc being the main alloy addition. Much work has been directed in the past two decades to find smalladditions to the stock to counter the deleterious effects of using lower purity aluminum, which would reducemanufacturing costs.Iron and copper are the two most detrimental impurities. They act as residual flaws on the surface of theanode. Also, copper and iron are cathodic to the aluminum matrix and have high exchange current densities forthe electrolytic evolution of hydrogen21. A selection of some of the elements found in aluminum is given in Table 1. The potentials of some of the intermetallics formed in the aluminum matrix are given in Table 222.Table 1. Exchange Current for hydrogen evolution21.Element -Logi o,HIron 5.6Copper 7.8Aluminium 8.0 Zinc 10.5Indium 11.3Mercury 12.3It is those impurities with lower hydrogen overvoltages than aluminum and more noble potentials that hamper the current capacity. Zinc and mercury both have higher hydrogen overvoltages than aluminum although mercury is cathodic to aluminum it is not detrimental. Iron and copper have low hydrogen overvoltages and are highly cathodic to the aluminum matrix. It can be envisioned that as lower purity aluminum stock is used, an increase in cathodic residual flaws is present, and more current is wasted due to hydrogen evolution on the surface of impurities rather than going towards protecting the structure.Table 2. Potential of intermetallics and elements in a NaCl-H2O2 Solution22.Intermetallic Potential (V) Vs. 0.1N CalomelCu -0.11Si -0.17CuAl2 -0.44FeAl3 -0.47FeMnAl12 -0.75 Al (high purity) -0.76Zn -1.26 The effects of copper, iron, and silicon on the current capacity of an Al-Zn-Sn anode developed by Ponchel and Horst8 are shown in Figure 2. As shown, copper has by far the most detrimental effect at weight percentages as low as 0.01%. Iron can be tolerated up to concentrations of around 0.1%. Silicon has a more gradual effect and can be tolerated at higher concentrations. It was also mentioned that nickel has an effect similar to copper on the current capacity. The work was done on Al-Zn-Sn anodes and the data may be subject to many errors as mentioned earlier16. The aim was to show the effects and importance of individual impurities at very low levels. Hence, it is not surprising that Ponchel and Horst8 set strict controls on the purity of aluminum stock: Fe, 0.1% max.; Si, 0.1% max; Cu, 0.009% max.In contrast, Sakano et al7 (Al-Zn-In) found that iron is beneficial for the current capacity up to a certain level. Exceeding this level would result in a loss in capacity. Copper was found to be very detrimental at a concentration of 0.019%. They also point out copper affects the corrosion characteristics, causing pitting and adherence of corrosion products. In regards to silicon, they found that it decreased the efficiency to 86% from around 92%. Silicon had the harmful effects of lowering the anode potential, irregular corrosion patterns, and lengthy induction periods (time for anode to reach operating potential). With the above observations, Sakano et al set their impurity limits as Fe, 0.1% max; Si, ~0.04%; Cu, <0.02%.R. F. May12 investigated the beneficial effects of iron in high performance Al-Zn-In anodes. More uniform corrosion was observed when specific additions of iron were made to high purity stock. This effect was offset by a loss in efficiency. May argues that using a higher purity stock drives up the cost of anode and also reduces the anode activation pattern. From Table 2, adding small amounts of manganese would alloy with the iron to produce intermetallics that would be near the potential of the matrix, thus reducing the local cell action effects of the iron. May suggests that the iron intermetallic phases, or residual flaws, promote initial dissolution. He coins the term “activation initiators.” May concludes that by adding manganese to the alloy, higher iron levels can be tolerated, and uniformity of anode attack can be maintained. A specific alloy composition was not given, but May does mention European Patent 018712723. It specifies a maximum effect with a manganese weight percent between 0.01% and 0.20%.Zamin24 studied Al-Mn binary alloys and the effect of iron concentration on corrosion resistance. He found that Mn increases the corrosion resistance of Al and increasing the Mn concentration can alleviate the detrimental effect of iron. He found that the presence of Mn alone has no effect but depends solely on the Mn/Fe ratio. Work by Klinghoffer and Linder25 showed that a ratio of 1:1 was the most beneficial. Balancing the Mn/Fe ratio, they were able to produce an Al-Zn-In (Zn, 4.0%; In, 0.24%) anode with up to 0.20% Fe. A summary of their work is shown in Figure 3. The current capacity increases up to a ratio of 1:1 and then decreases dramatically. The operating potential is not affected until a ratio of 1:1 is exceeded where it becomes more noble.Googan26 studied aluminum and aluminium-1.0% Zn with iron additions between 0.05% and 1.0%. The work found that iron is mostly segregated as a grain boundary intermetallic phase FeAl3. He proposes the “Iron-Dissolution-Electrodeposition” process in which dissolution of FeAl3 results in ferrous ions depositing to form a layer of pure iron on the alloy surface. The pure iron deposit stimulates the cathodic reaction kinetics, which results in increased local cell action and ultimately a loss in efficiency. Seeking a solution to the problem, Googan found the 0.5% germanium overcomes the deleterious effects of the iron. In contrast to manganese, the germanium does not alter the FeAl3 intermetallic but instead interferes with the deposition of the ferrous ions. The phenomenon would then inhibit the production of low hydrogen overvoltage iron deposits.In 1978, Smith, Reding, and Riley10 developed commercially available anode1 consisting of Al-Zn-In-Si. They did not report on the iron or copper contents but did state that the silicon sequesters the iron to form an intermetallic that is less cathodic than pure iron or silicon. The silicon works in the same way as manganese in that it is the ratio of silicon to iron which is important. Presently, Al-Zn-In alloys can be produced with up to 0.5% iron with 85% efficiency17.1 Galvalum IIIKobayashi and Tamura15 reported the results of tests of various alloy additions. Figure 4 shows the effect of silicon on the operating potential and current capacity of Al-Zn-In alloy2 which has an iron impurity concentration of 0.14%. The silicon ranges between 0.07% and 0.4%. A maximum appears in the current capacity at about 0.15% silicon. It can be concluded that the optimum situation is an iron-silicon ratio of 1:1, which is close to that of the manganese.BEHAVIOR OF ANODES AT ELEVATED TEMPERATUREAt present there has been little theoretical investigation into the behavior of aluminum based anodes in elevated temperature seawater. The majority of the work was aimed at giving the cathodic protection engineer some direction on the performance of aluminum based anodes in harsh environments. The main environment studied was seabed mud. Elevated temperature seawater tests are few and far between and their results are rarely discussed. A review and an in-depth study of indium activated anodes in mud has been completed by Erricker27 and will not be discussed here. This section presents results of indium activated anodes in elevated temperature seawater and brine.Murai, Tamura, and Miura28,29 studied a Al-Zn-Sn-Bi-Ga alloy in seawater from 0 to 80°C at 3 and 10 A/m2 for 240 hours. The anode potential remained constant at –1.080V SCE from 10 to 50°C at 3 A/m2. At 10 A/m2, the anode polarized to –1.055V SCE and remained constant from 20°C till around 60°C. The potential became more noble above 60°C reaching approximately -1.020V SCE at 80°C, with not much difference between 3 and 10 A/m2. They attribute the change in potential at higher temperature to the growth of boehmite. The current efficiency was 95% between 0 and 40°C. At 70°C, the current efficiency is 88% for 3 A/m2 and 91% for 10 A/m2. When the seawater temperature was increased to 80°C, the current efficiency decreased rapidly to 40% for 3 A/m2 and 51% for 10 A/m2. The corrosion pattern was identical over the temperature range 0 to 60°C showing general attack. Above 70°C, the corrosion pattern was more localized. They do not discuss any possible explanation for the rapid loss in efficiency above 70°C.Smith, Reding, and Riley10 tested an Al-Zn-In-Si alloy in 75°C 15% brine. At a current density of 2.1 A/m2, the alloy delivered 2000 A⋅h/kg and an operating potential of –1060 mV SCE. The same alloy delivered 2500 A⋅h/kg and –1080 mV SCE in full seawater tests. Additional studies in low salinity seawater showed that the operating potential of the alloy became more positive as the salinity decreased. This indicates that the potential of the alloy might be related to resistivity of the environment much like the breakdown potential is on the chloride activity. No change in current capacity was noted with change in salinity.Schrieber and Murray30,31 report the results of 30 day tests on Al-Zn-In-Si and Al-Zn-Hg anodes at 38, 66, and 93°C using current densities of 2.2 A/m2 and 6.5 A/m2 in 3 and 7% NaCl. In general, the anode potential became more noble with increasing temperature. Increasing the brine concentration lowered the operating potential. At 2.2 A/m2, the current capacity increases slightly with increasing temperature from 38 to 66°C, whilst the current capacity is relatively unchanged for the higher current density over this temperature range. In agreement with Murai et al28,29, the current capacity decreases rapidly above a temperature near 70°C. The data for 2.2 A/m2 is summarized in Figure 5. The corrosion morphology was uniform for both alloys at 38 and 66°C. In line with the decrease in current capacity at 93°C, the morphology was uneven and localized. Schrieber and Murray do not discuss possible mechanisms for the behavior of the anodes with increasing temperature.Kobayashi and Tamura32 reported similar results on an Al-Zn-In alloy. They conducted their tests in artificial seawater between 5 and 100°C at 10 A/m2 for 240 hours. The current capacity for the alloy was approximately 2620 A⋅h/kg between 5 and 65°C. Above 80°C, the current capacity decreased to about 1000 A⋅h/kg at 100°C. The operating potential of the alloy was –1.10V SCE until 50°C. Above 50°C, the operating potential increases to –1.00V SCE at 100°C. They state that the growth of boehmite may cause the operating potential to become more noble. Corrosion morphology change with temperature was not discussed.Wroe and May33,12 only reported results for 5 and 95°C. At the elevated temperature, Al-Zn-In alloy gave a current capacity of 474 A⋅h/kg and an operating potential of –1.074V SCE. They claim that a high magnesium, low manganese alloy delivers 1125 A⋅h/kg and –1.05V SCE at 95°C. These results are compared against those2 Alanode IIIat 5°C which gave values of –1.120V SCE and 2634 A⋅h/kg for the Al-Zn-In and –1.130V SCE and 2794 A⋅h/kg for the high Mg low Mn alloy.Fischer34 studied the effects of temperature and depth on the behavior of Al-Zn-In anodes in natural seawater. Current densities from 0.5 to 5 A/m2 and pressures from 1 to 50 bar were used in a 60 day test. In agreement with previous cited work, the operating potential of the anode increased with increasing temperature. The current capacity was largely dependent on the current density and temperature. At 0.5 A/m2, increasing the temperature from 10°C to 70°C increased the current capacity from about 2000 A⋅h/kg to around 2200 A⋅h/kg. At 5 A/m2, increasing the temperature from 10°C to 70°C gradually decreased the current capacity from about 2080 A⋅h/kg to 1400 A⋅h/kg. The results at 0.5 A/m2 are in agreement with Schrieber and Murray30,31 , being that the current capacity increased with temperature for low current densities. Fischer did not test above 70°C. At ambient temperature and pressure, Fischer observed an even distribution of pits over the anode surface. At higher temperatures, the corrosion morphology was much more irregular with deep large pits and grooves. In general, at higher temperature, the corrosion morphology was more localized and increasing the pressure further localized the attack.At present, not much work has been directed to the mechanism behind the behavior of aluminum-based anodes at higher temperatures. From the above discussion, some observations need to be addressed. First, the operating potential becomes more noble with increasing temperature. Second, the current capacity either increases with increasing temperature for low current densities or decreases with temperature if the current density is above some value. Third, the corrosion morphology changes from uniform to very localized with increasing temperature.EXPERIMENTAL WORKSacrificial anode parameters form the core of cathodic protection design. The two most important electrochemical parameters are the operating potential and the current capacity. Other factors are the corrosion morphology, long term output characteristics, and anode structure. Short-term electrochemical tests are used to measure the electrochemical properties of anode material, but the most accurate test is a long term field test35. The problems with long-term tests are the time to complete the test and the ability to obtain reproducible results. Thus, anode producers have a vested interest in short term testing of sacrificial anodes.The most popular of the various tests is the galvanostatic test which involves the passage of a constant current through the anode test specimen for a specified time whilst measuring its potential. The current capacity is calculated by the weight loss of the sample and the total amount of charge passed (A⋅h). The weight loss method measures the sum of all the sources of inefficiency. A different approach for measuring efficiency using the galvanostatic test is to measure the volume of hydrogen evolved from the sample over a known period of time.Both current capacity tests were performed on the anode material alloy C3 and alloy X at room and elevated temperatures. Two types of alloys were tested: alloy C (commercially available chemistry) and for comparative purposes alloy X (non-commercial alloy – made for scientific research). The nominal composition of the alloys is given in Table 3. Alloy X is nominally the same as alloy C but with a lower composition in indium. It was aimed that in comparing the two alloys some insight into the activation mechanism of indium would be gained.The alloys were received as sticks and samples were machined using a band saw and finished to the desired height with a lathe. After the samples were cut, preparation was performed as follows. First, the samples were scrubbed using a nylon brush with soap and water. Afterwards, the samples were cleaned with acetone and a nylon brush. Finally, the samples were dried in an oven for 15 minutes at 120°C.A general schematic diagram of the weight loss galvanostatic test is shown in Figure 6. The main components are the test sample, electrolyte bath, cathode, coulometer, and galvanostat.All tests were performed in 15 liters of de-ionized water with 3.5% NaCl. The NACE36 and DNV37 prescribe using artificial seawater or circulated real full strength seawater. Due to the amount of tests and volume of electrolyte needed, this was deemed uneconomical. The solution was at room temperature which varied between 17 and 22ºC. The tests performed at room temperature are designated as 20ºC.3 Alloys were provided by Impalloy Alloys Ltd. Alloy C is a generic name for a commercially available alloy Impalloy III. Alloy X is a generic name for an alloy specially cast for experimental purposes and is not commercially available.Table 3. Nominal compositions of alloys (weight percent). Element Alloy C Alloy XZinc 4.67 4.91 Indium 0.0175 0.0039Iron 0.083 0.047Silicon 0.86 0.049Copper 0.0024 0.0007Gallium 0.0082 0.0121Titanium 0.0198 0.0239Aluminum Balance BalanceExperimental Procedure15 liters of electrolyte per tank were prepared the day before the test was to begin. On the following day, the pH was set to 8.2 by addition of HCl or NaOH. Next, the samples and copper plating rod were weighed. The samples were placed in the centre of the cathodes, which were placed in the centre of the tanks. The sample level was centered between the bottom of the tank and the electrolyte level. With all the components of the test connected in series, the current was set with the galvanostat as to give the desired current density. The potential of the anode was measured with a saturated calomel electrode (SCE) connected to a saturated KCl agar-agar Luggin probe and a high impedance digital voltmeter. The SCE reference electrode remained at room temperature for all tests. From the start of the test, the potential was measured at 1,3,24, 96, and 168 hours. When the test was complete (168 hours), the galvanostat was turned off and the samples were removed from the electrolyte. They were cleaned using distilled water and a nylon brush, rinsed in acetone, and dried at 120°C for 15 minutes. The copper plating rod was rinsed with distilled water, then acetone, and also dried at 120°C for 15 minutes. The copper plating rod and the samples were re-weighed and the current capacity was calculated by the following formula:)( )( 8433.0)/( grams Sample of Loss Weight grams Rod Copper Gain Weight kg h A Capacity Current ⋅=⋅ The samples were finally categorized and stored in plastic bags for later examination.Elevated Temperature Tests - ExperimentalFigure 7 shows the internal components of the heat jacket, the top cover, and a photograph of the heat jacket and temperature controller. The internal container for the electrolyte was a carbon steel cylinder of 15.5cm inner diameter, 25.5cm depth, and wall thickness of 0.5cm. 4 liters of 3.5% NaCl electrolyte was used. Surrounding the steel cylinder was galvanized steel mesh and aluminum foil. Heater tape was formed around the mesh and foil and itself fully enclosed by a layer of aluminum foil. The next layer was a covering of fiberglass cloth wrap followed by a layer of pink housing fiberglass insulation. Lastly, steel mesh was wrapped around to maintain shape. The exterior was covered by packaging tape to prevent contact with the fiberglass and for aesthetic reasons.The top was machined from a polypropylene sheet of 2.5cm thickness and diameter of 17.7cm. A lip was also machined to the inner diameter of the steel cylinder to insure a snug fit. The centre of the top was bored to a diameter of 4.5cm. Three other holes (1.1cm diameter) were drilled and tapped for cable glands. The centre bore allowed installation and removal of the sample from the experimental kit. The three cable glands allowed a thermometer and a Luggin probe to be fitted and the third was a spare.The temperature was controlled by a capillary thermostat. The thermostat is operated from a remote bulb connected by a 1m capillary. The temperature range for the thermostat was 0 to 120°C. The thermostat, indicator light, and connections to heater tape were installed in a housing fitted with a 3-amp fuse. The final product is shown in Figure 7.The procedure for the elevated temperature experiments are the same as for the room temperature experiments including duration of test. The pH of the electrolyte was adjusted to 8.2 before heating. It usually required 3 to 7 hours for the desired temperature to be reached. The samples were immersed in the solution after it reached the desired temperature. The SCE reference electrode remained at room temperature for all tests. This may give rise to a minor thermal liquid junction potential. Ashworth and Fairhurst 38 reported the magnitude to be ≤5mV. The error would be present in all tests and was deemed acceptable. The temperatures studied were 40, 60, and 80°C.Hydrogen Evolution Tests - ExperimentalHydrogen evolution tests were designed to quantify the amount of inefficiency due to local cell action. The efficiencies measured could then be compared to the weight loss experiments with the aim of separating the total efficiency loss into mechanical loss, negative difference effect, and local cell action.Hydrogen evolution experiments at room temperature were performed using the weight loss apparatus described above. An inverted 50mL burette fitted with a funnel was used to collect the hydrogen gas. The samples were started at the desired current density. Hydrogen collection was started 24 hours after the start of the test. The burette and funnel were placed symmetrically over the sample with funnel level with the top of the sample. The electrolyte was drawn into the burette with a pipette filler. Collection time was between 3 to 24 hours depending on the amount of gas collected. The efficiency was calculated by the following formula⎥⎦⎤⎢⎣⎡⋅+=(min))(132 %T mL V Current Applied Current Applied Efficiencywhere V is the change in volume of gas collected over the time period T .For elevated temperatures, the apparatus shown in Figure 8 was used. A 5 litre Quick Fit jar was fitted with steel mesh. A 5-inlet Quick Fit top was used to hold the titanium rod to support the sample, support the burette, and allow electrical connection to the cathode. The whole jar was then submerged into an elevated temperature bath thermistatically controlled to ±2°C. The samples were run for 24 hours prior to gas collection. The temperature of the burette was measured by taping a thermocouple to the burette in the area of gas collection and the constant of 132 was adjusted for the temperature.EXPERIMENTAL RESULTSThis section presents the results of how current density and temperature affect the current capacity, operating potential, and corrosion morphology of alloy C and alloy X. The current capacity was measured by the weight loss and hydrogen evolution methods over the current densities of 0.1 to 6 A/m 2. For comparative purposes, alloy X was tested only at 3 A/m 2 at elevated temperature. The aim was to gain some insight into the mechanism of indium activation, the mechanism of efficiency loss, and assess the feasibility of using a commercially available anode alloy at elevated temperature.Results at 20°CThe operating potential for alloy X versus current density after 7 days exposure is shown in Figure 9. Averaged over all the current densities, alloy X had a mean operating potential of -977±3 mV SCE. One sample was run at a current density of 60 A/m 2 and had an operating potential of -930mV SCE showing that a considerable current density is needed to polarize the alloy.The addition of indium (Impalloy III) decreased the operating potential by over 125mV to -1110±3 mV SCE. The operating potential versus current density after 7 days exposure for alloy C is also shown in Figure 10. Again, the operating potential is independent of the current density measured. In line with alloy X, running alloy C at 60 A/m 2 resulted in polarization of ~43mV to -1070mV SCE.Operating potentials measured in this study agree well with those given in the literature. Doremus and Davis 4 & Hine and Wei 5 reported the potential of an Al-5%Zn alloy to be -780mV SCE. Sakano et al 7 reported a potential of -1100mV SCE for an Al-Zn-In alloy in 1966. Schrieber and Murray 31 measured a value of -1.108mV AgCl Seawater for an Al-Zn-In-Si anode in artificial seawater. This is close to a value of -1090mV SCE reported。