CHIN.PHYS.LETT.Vol.25,No.1(2008)294 In?uence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure?
WU Xiao-Ming(吴晓明)1,2,3,HUA Yu-Lin(华玉林)1,2,3??,YIN Shou-Gen(印寿根)1,2,3,
ZHANG Li-Juan(张丽娟)1,2,3,WANG Yu(王宇)1,2,3,HOU Qing-Chuan(侯庆传)1,2,3,
ZHANG Jun-Mei(张均媚)4
1Institute of Material Physics,Tianjin University of Technology,Tianjin300384 2Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education),Tianjin University of
Technology,Tianjin300191
3Tianjin Key Laboratory of Photoelectric Materials and Device,Tianjin300384
4Station58,Tianjin Supervision Bureau of Quality and Technology,Tianjin300381
(Received19September2007)
A novel phosphorescent organic white-light-emitting device(WOLED)with con?guration of ITO/NPB/CBP:
TBPe:rubrene/Zn(BTZ)2:Ir(piq)2(acac)/Zn(BTZ)2/Mg:Ag is fabricated successfully,where the phosphorescent dye bis(1-(phenyl)isoquinoline)iridium(I I I)acetylanetonate(Ir(piq)2(acac))doped into bis-(2-(2-hydroxyphenyl) benzothiazole)zinc(Zn(BTZ)2)(greenish-blue emitting material with electron transport character)as the red emitting layer,and?uorescent dye2,5,8,11-tetra-tertbutylperylene(TBPe)and5,6,11,12-tetraphenyl-naphthacene (rubrene)together doped into4,4 -N,N -dicarbazole-biphenyl(CBP)(ambipolar conductivity material)as the blue-orange emitting layer,respectively.The two emitting layers are sandwiched between the hole-transport layer N,N -biphenyl-N,N -bis(1-naphthyl)-(1,1 -biphenyl)-4,4 -diamine(NPB)and electron-transport layer(Zn(BTZ)2).
The optimum device turns on at the driving voltage of4.5V.A maximum external quantum e?ciency of1.53% and brightness15000cd/m2are presented.The best point of the Commission Internationale de l’Eclairage(CIE) coordinates locates at(0.335,0.338)at about13V.Moreover,we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.
PACS:78.60.Fi,85.60.Jb
Organic light-emitting devices(OLEDs)have been attracting tremendous attention since the?rst demon-stration of the double-layered device in1987[1]be-cause of their excellent characteristics such as low cost, lightweight,easy processing,sound luminescent per-formance,compatible with?exible substrates and so on.White organic light-emitting devices(WOLEDs) play an important role for the commercialization of OLEDs due to their potential applications in back-lights for liquid-crystal displays and in general solid-state lighting sources.Great e?orts have been de-voted to developing WOLEDs,for example,single-layered structure WOLEDs with smart blending ap-propriate amount of dopants doped into the same host,[2,3]multilayer structure WOLEDs with super-position of two or more di?erently coloured emitting layers,[4]use of the formation of interfacial exciplexes, etc.[5]In this study,we demonstrate a WOLED based upon the host-dopant system with a double-emissive-layered structure which is less complicated in fabrica-tion process and more?exible in colour tuning With the preferable electroluminescent(EL)characteristics, this device exhibits a pure white light emission con-taining red,orange and blue tricolour.
The device architecture is shown in Fig.1.In these devices,N,N -biphenyl-N,N -bis(1-naphthyl)-(1,1 -biphenyl)-4,4 -diamine(NPB)and bis-(2-(2-hydroxyphenyl)benzothiazole)zinc(Zn(BTZ)2)are used as hole-transporting/electron-blocking and hole-blocking/electron-transporting layers,respectively; Indium tin oxide(ITO)coated glass is used as anode and stacked Mg:Ag as cathode.
Three types of the OLEDs have been fabricated with the di?erent concentrations of dyes doped into the hosts,which are simply described in two emitting layers as follows:
(1)/CBP:3wt%TBPe:1wt%rubrene/Zn(BTZ)2: 5wt%Ir(piq)2(acac)/,
(2)/CBP:3wt%TBPe:0.6wt%rubrene/Zn(BTZ)2: 3wt%Ir(piq)2(acac)/,
(3)/CBP:3wt%TBPe:0.3wt%rubrene/Zn(BTZ)2: 3wt%Ir(piq)2(acac)/.
For every device,2,5,8,11-tetra-tertbutylperylene (TBPe)and5,6,11,12-Tetraphenyl-naphthacene (rubrene)together doped into4,4 -N,N -dicarbazole-biphenyl(CBP)as blue-orange EML,bis(1-(phenyl)isoquinoline)iridium(I I I)acetylanetonate (Ir(piq)2(acac))doped into Zn(BTZ)2as red EML.
?Supported by National Natural Science Foundation of China under Grant No60576038,and The Royal Society(RS)via an International Joint Project of NSFC and RS,Tianjin Natural Science Key Foundation(06TXTJJC14603),and Tianjin Key Discipline of Material Physics and Chemistry.
??Email:yulinhua@https://www.doczj.com/doc/3118752750.html,
c 2008Chinese Physical Society an
d IOP Publishing Ltd
No.1WU Xiao-Ming et al.295 In order to make an objective comparison of EL char-
acteristics between the two WOLEDs,the thickness
of every function layer is optimized to a certain value
which is changeless in di?erent devices.All of the
organic?lms are fabricated by thermal deposition
(Edward Auto-500Thermal Evaporation Coating Sys-
tem)onto a pre-cleaned ITO-coated glass substrate (sheet resistance about30?/sq)at a background pres-sure<2×10?6torr.The thickness of the deposited ?lms is monitored by an oscillating quartz thickness monitor.The EL spectra,brightness,CIE coordi-nates
and correlated colour temperature(CCT)of the devices are recorded with the Spectra Scan PR-650(Photo Research).The brightness-current den-sity and quantum e?ciency-current density curves are measured by an OLED testing system mainly in comparison of a programmable2400Sourcemeter (Keithley)and a485Picoammeter(Keithley).All the measurements are carried out at room temperature in air.
F
ˉ
ig.1.Con?guration of the devices.
Fig.2.Brightness versus current density curves of the three devices.
From Figs.2and3,device1presents a maxi-mum brightness of23000cd/m2at the current den-sity of542mA/cm2and a maximum external quan-tum e?ciency of2.4%at the driving voltage of9V (about59mA/cm2),which are greater than those of device2(brightness:20000cd/m2at540mA/cm2 and QE:1.8%at59mA/cm2)and device3(bright-ness:16000cd/m2at542mA/cm2and QE:1.5%at 76mA/cm2).
Fig.3.External quantum e?ciency
versus current den-sity curves of the three devices.
Although the luminance and e?ciency of device3 are not conspicuous among the three devices,it yields a pure white light emission with CIE coordinates of (x=0.335,y=0.338)at13V with CCT of6800K, obviously as shown in Figs.4–6,consisting of the blue, orange and red tricolour emissions which mainly peak at464nm,552nm and624nm,respectively.More-over,device3also exhibits a relatively stable white colour variation under the applied voltage increasing from11V to15V as the CCT,EL spectra and CIE coordinates trendlines of this device present,which are shown in Figs.5and6.However,a yellowish-white colour and a bluish-white colour appear when the driving voltages are applied lower than10V and more than15V,respectively.
On the other hand,it could be easily found that the doping concentration of TBPe is?xed at3.0wt% Fig.4.EL spectra of the three devices.
296WU Xiao-Ming et al.Vol.25
Fig.5.Varying CIE coordinates of device3under dif-ferent bias,and best points of devices1and2.Inset: photograph of device3.
Fig.6.(a)EL spectra of device3under di?erent biases.
(b)Correlated colour temperature versus voltage for de-
vice3.
among all the devices.This is consistent with the re-port that TBPe undergoes signi?cantly less molecular aggregation than other?uorescent dopants.There-fore,the EL performance of the TBPe-doped de-vices becomes insensitive to dopant concentrations up to5.0wt%.[6]In order to achieve the pure white colour,the light doping concentration of rubrene of device3is decreased to the0.3wt%compared with those of devices1and2after several times of exper-iments.Besides the host/dopant energy transfer in this work,there is a signi?cant overlap between the emission spectrum of TBPe(464nm,490nm)and the absorption spectrum of rubrene(460nm,490nm and 534nm),[7]so energy could also be transferred by the F¨o rster process.[8,9]In fact,dipole-dipole coupling re-sults in a nonradiative transfer of the singlet excited-state energy from two donor molecules(CBP and TBPe)to the acceptor molecule(rubrene)in CBP: TBPe:rubrene layer.Two orange emissions related F¨o rster energy transfer processes are listed as follows: 1CBP?+rubrene→CBP+1rubrene?,(1)
1TBPe?+rubrene→TBPe+1rubrene?.(2) Hereby,orange emissions could be easily ful?lled by the processes1and2,which result in the small doping concentration of rubrene in this work.At the same time,the red phosphorescent Ir(piq)2(acac)dop-ing level has to be decreased to3wt%because the intensity of the orange-red emission would increase to exceed that of the blue emission when the driv-ing voltage goes up if the red phosphorescent dop-ing level is?xed at5wt%together with the more mid-wavelength ingredient(1wt%rubrene)of device 1,and the pure white light emission can hardly be balanced to the white light region in the CIE coordi-nates.It is considerable that the orange dye rubrene contains both the dominant mid-wavelength which peaks at552nm and minor long-wavelength which peaks at610nm.The long-wavelength superposition of rubrene together with Ir(piq)2(acac)would result in the higher intensity of orange-red emissions with the relative high doping level of rubrene or Ir(piq)2(acac), which also contribute to the higher luminance and e?-ciency of devices1and2.Considering that the doping concentration of the rubrene is very sensitive for tun-ing colour,the pure white light emission has been suc-cessfully achieved from device3when the doping level of rubrene?nally optimized from1%to0.3%.Fur-thermore,as shown in Fig.4,it can be easily found that the EL peak of Ir(piq)2(acac)has a slight blue shift from624nm to612nm,which is due to the de-creasing doping concentration of red dye(from5wt% to3wt%).
In conclusion,the double-emissive-layered device 3comprising of?uorescence and phosphorescence blended systems(CBP:TBPe:rubrene/Zn(BTZ)2: Ir(piq)2(acac))is successfully fabricated to obtain the pure white light emission by optimizing the doping concentration of orange and red dyes.It presents a low turn-on voltage of4.5V,a brightness of15000cd/m2 at the current density of467mA/cm2(about18V),
a maximum external quantum e?ciency of1.5%at
8.5V(about60mA/cm2)and the CIE coordinates of (x=0.335,y=0.338)with CCT of6800K at about
No.1WU Xiao-Ming et al.297
13V,respectively.With the good EL performance, this kind of WOLED are particular suitable to be in applications to the back lights for LCD and solid-state lighting.
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[3]Li Y B,Hou Y B,Teng F and Xu X R2004Chin.Phys.
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硬件类常用英语词汇 下面是小编整理的硬件类常用英语词汇，希望对大家有帮助。 计算机英语词汇大全 常见硬件篇 CPU：Central Processing Unit，中央处理单元，又叫中央处理器或微处理器，被喻为电脑的心脏。 LD：Laser Disk，镭射光盘，又称激光视盘。 CD：Compact Disc，压缩光盘，又称激光唱盘。 CD-ROM：Compact Disc-Read Only Memory，压缩光盘-只读记忆(存储)，又叫“只读光盘”。 VCD：Video Compact Disc，视频压缩光盘，即人们通常所说的“小影碟”。 RAM：Random Access Memory，随机存储器，即人们常说的“内存”。 ROM：Read-Only Memory，只读存储器。 Seagate：美国希捷硬盘生产商。Seagate英文意思为“通往海洋的门户”，常指通海的运河等。 Quantum：英文含意为“定量，总量”。著名硬盘商标，美国昆腾硬盘生产商(Quantum Corporation)。
Maxtor：“水晶”，美国Maxtor硬盘公司。 PCI：Peripheral Component Interconnection，局部总线(总线是计算机用于把信息从一个设备传送到另一个设备的高速通道)。PCI总线是目前较为先进的一种总线结构，其功能比其他总线有很大的提高，可支持突发读写操作，最高传输率可达132Mbps，是数据传输最快的总线之一，可同时支持多组外围设备。PCI不受制于 CPU处理器，并能兼容现有的各种总线，其主板插槽体积小，因此成本低，利于推广。 EDO：Extended Data Output，扩充数据输出。当CPU的处 理速度不断提高时，也相应地要求不断提高DRAM传送数据速度， 一般来说，FPM(Fast Page Model)DRAM传送数据速度在60-70ns，而EDO DRAM比FPM快3倍，达20ns。目前最快的是SDRAM(Synchronous DRAM，同步动态存储器)，其存取速度高 达10ns。 SDRAM：Synchronous Dynamic Random Access Memory，同步动态随机存储器，又称同步DRAM，为新一代动态 存储器。它可以与CPU总线使用同一个时钟，因此，SDRAM存储 器较EDO存储器能使计算机的性能大大提高。 Cache：英文含义为“(勘探人员等贮藏粮食、器材等的)地窖; 藏物处”。电脑中为高速缓冲存储器，是位于CPU和主存储器 DRAM(Dynamic Randon Access Memory)之间，规模较小，但 速度很高的存储器，通常由SRAM(Static Random Access
·PC：个人计算机Personal Computer ·CPU：中央处理器Central Processing Unit ·CPU Fan：中央处理器的“散热器”(Fan) ·MB：主机板MotherBoard ·RAM：内存Random Access Memory，以PC-代号划分规格，如PC-133，PC-1066，PC-2700 ·HDD：硬盘Hard Disk Drive ·FDD：软盘Floopy Disk Drive ·CD-ROM：光驱Compact Disk Read Only Memory ·DVD-ROM：DVD光驱Digital Versatile Disk Read Only Memory ·CD-RW：刻录机Compact Disk ReWriter ·VGA：显示卡(显示卡正式用语应为Display Card) ·AUD：声卡(声卡正式用语应为Sound Card) ·LAN：网卡(网卡正式用语应为Network Card) ·MODM：数据卡或调制解调器Modem ·HUB：集线器
·WebCam：网络摄影机 ·Capture：影音采集卡 ·Case：机箱 ·Power：电源 ·Moniter：屏幕，CRT为显像管屏幕，LCD为液晶屏幕 ·USB：通用串行总线Universal Serial Bus，用来连接外围装置·IEEE1394：新的高速序列总线规格Institute of Electrical and Electronic Engineers ·Mouse：鼠标，常见接口规格为PS/2与USB ·KB：键盘，常见接口规格为PS/2与USB ·Speaker：喇叭 ·Printer：打印机 ·Scanner：扫描仪 ·UPS：不断电系统 ·IDE：指IDE接口规格Integrated Device Electronics，IDE接口装置泛指采用IDE接口的各种设备
1.只是不及物的： faint,hesitate,lie,occur,pause,rain,remain,sleep,sneeze. 2.常见的及物，不及物的： answer,ask,begin,borrow,choose,climb,dance,eat,enter,fail,f ill,grow,help,hurry,jump,know,leave,marry,meet,obey,pull,re ad,see,sell,touch,wash,watch,win,write 3.及物不及物意义变化的lift.升高beat vi.跳动vt. 敲、打; grow vi.生长vt. 种植play vi.玩耍vt. 打（牌、球）,演奏smell vi.发出（气味）vt. 嗅ring vi.（电话、铃）响vt.打电话speak vi.讲话vt. 说（语言）hang vi. 悬挂vt. 绞死operate vi.动手术vt. 操作 4.意义不变的 start, answer, sing, close, consider, insist, read, learn, prepare, pay, hurt, improve....
live, go, work, listen, look, come, die, belong, fa ll, exist, rise, arrive, sit, sail, hurry, fail, su cceed. agree... 不及物动词 agree, go, work, listen, look, come, die, belong, f all, exist, rise, arrive, sit, sail, hurry, fail, s ucceed、beat、buy, catch, invent, found, like, obs erve, offer, prevent, promise, raise, find, forget, receive, regard, see, say, seat, supply, select, s uppose, show, make, take, tell 6.不及物动词短语 down (stop functioning 坏了，不好使了) That old Jeep had a tendency to break down just w hen I needed it the most. on (become popular 出名) Popular songs seem to catch on in California first and then spread eastward. 3. come back ( return to a place 返回)
计算机英语-常见硬件 CPU：Central Processing Unit，中央处理单元，又叫中央处理器或微处理器，被喻为电脑的心脏。 RAM：Random Access Memory，随机存储器，即人们常说的"内存"。 ROM：Read－Only Memory，只读存储器。 EDO：Extended Data Output，扩充数据输出。当CPU的处理速度不断提高时，也相应地要求不断提高DRAM传送数据速度，一般来说，FPM（Fast Page Model）DRAM传送数据速度在60－70ns，而EDO DRAM比FPM快3倍，达20ns.目前最快的是SDRAM（Synchronous DRAM，同步动态存储器），其存取速度高达10ns. SDRAM：Synchronous Dynamic Random Access Memory，同步动态随机存储器，又称同步DRAM，为新一代动态存储器。它可以与CPU总线使用同一个时钟，因此，SDRAM存储器较EDO存储器能使计算机的性能大大提高。 Cache：英文含义为"（勘探人员等贮藏粮食、器材等的）地窖；藏物处"。电脑中为高速缓冲存储器，是位于CPU和主存储器DRAM（Dynamic Randon Access Memory）之间，规模较小，但速度很高的存储器，通常由SRAM（Static Random Access Memory静态存储器）组成。 CMOS：是Complementary Metal Oxide Semiconductor的缩写，含义为互补金属氧化物半导体（指互补金属氧化物半导体存储器）。CMOS是目前绝大多数电脑中都使用的一种用电池供电的存储器（RAM）。它是确定系统的硬件配置，优化微机整体性能，进行系统维护的重要工具。它保存一些有关系统硬件设置等方面的信息，在关机以后，这些信息也继续存在（这一点与RAM完全不同）。开机时，电脑需要用这些信息来启动系统。如果不慎或发生意外而弄乱了CMOS中保留的信息，电脑系统将不能正常启动。 PCI：Peripheral Component Interconnection，局部总线（总线是计算机用于把信息从一个设备传送到另一个设备的高速通道）。PCI总线是目前较为先进的一种总线结构，其功能比其他总线有很大的提高，可支持突发读写操作，传输率可达132Mbps，是数据传输最快的总线之一，可同时支持多组外围设备。PCI不受制于CPU处理器，并能兼容现有的各种总线，其主板插槽体积小，因此成本低，利于推广。
动词lie，lie，lay的区别 1)lie用作规则动词(lie，lied，lied)时意为“说谎”。如： ①He wasn't telling the truth. He lied again/He was lying. 他没讲实话，他又撒谎了。/他在撒谎。 ②She lied to us about her job. 她就她的工作对我们撒了谎。 ③Your watch must be lying. 你的表肯定不准。 【注意】表示这一意思时，lie可用作名词。我们一般说tell a lie或tell lies，而不说say/talk/speak a lie(或lies)。再如：Lies cannot cover up facts.(谎言掩盖不了事实。)如要说“我痛恨说谎话”，可以说I hate lying或I hate telling lies，一般不说I hate lie或I hate to lie。hate to lie尽管句法正确，但似乎含有“虽然不愿，但仍不得不说谎”之意。
2)lie用作不规则动词(lie，lay，lain)时，表示“躺”，“(东西)平放”，“位于”等意。如： ①He's still lying in bed. 他还躺在床上。 ②He felt tired, so he went and lay down for a rest. 他感到疲劳，所以去躺下休息了。 ③His books lay open on the desk when I went in. 我进去时，发现他的书平摊在书桌上。 ④Snow lay thick on the fields. 田野里覆盖着厚厚的一层雪。 ⑤Don't leave your things lying about. 别把东西四处乱丢。
世界各组织、机构全称及其缩写UN ( the United Nations) 联合国 FAO (Food and Agriculture Organization of the United Nations) (联合国)粮食及农业组织 UNESCO (United Nations Educational, Scientific and Cultural Organization) 联合国教科文组织 UNCF (United Nations Children's Fund, ——其前身是United Nations International Children's Emergency Fund) 联合国儿童基金会 UNIDO (United Nations Industrial Development Organization) 联合国工业发展组织 UNDP (United Nations Development Programme) 联合国开发计划署 UNEP (United Nations Environment Programme) 联合国环境署 UNCDF(United Nations Capital Development Fund) 联合国资本开发基金会 UNCTAD (United Nations Conference on Trade and Development) 联合国贸易与发展会议
WHO (World Health Organization) 世界卫生组织 WMO (World Meteorological Organization) 世界气象组织 WTO (World Trade Organization) 世界贸易组织 前身为GATT (General Agreement on Tariffs and Trade) 关税及贸易组织 WIPO (World Intellectual Property Organization) 世界知识产权组织 WPC (World Peace Council) 世界和平理事会 ILO (International Labour Organization) 国际劳工组织 IMF (International Monetary Fund) 国际货币基金组织 IOC (International Olympic Committee) 国际奥林匹克委员会 UPU (Universal Postal Union) 万国邮政联盟
电子类常用缩写(英文翻译) AC(alternating current) 交流(电) A／D(analog to digital) 模拟／数字转换 ADC(analog to digital convertor) 模拟／数字转换器 ADM(adaptive delta modulation) 自适应增量调制 ADPCM(adaptive differential pulse code modulation) 自适应差分脉冲编码调制 ALU(arithmetic logic unit) 算术逻辑单元 ASCII(American standard code for information interchange) 美国信息交换标准码 AV(audio visual) 声视，视听 BCD(binary coded decimal) 二进制编码的十进制数 BCR(bi-directional controlled rectifier)双向晶闸管 BCR(buffer courtier reset) 缓冲计数器 BZ(buzzer) 蜂鸣器，蜂音器 C(capacitance，capacitor) 电容量，电容器 CATV(cable television) 电缆电视 CCD(charge-coupled device) 电荷耦合器件 CCTV(closed-circuit television) 闭路电视 CMOS(complementary) 互补MOS CPU(central processing unit)中央处理单元 CS(control signal) 控制信号 D(diode) 二极管 DAST(direct analog store technology) 直接模拟存储技术 DC(direct current) 直流 DIP(dual in-line package) 双列直插封装 DP(dial pulse) 拨号脉冲 DRAM(dynamic random access memory) 动态随机存储器 DTL(diode-transistor logic) 二极管晶体管逻辑 DUT(device under test) 被测器件 DVM(digital voltmeter) 数字电压表 ECG(electrocardiograph) 心电图 ECL(emitter coupled logic) 射极耦合逻辑 EDI(electronic data interchange) 电子数据交换 EIA(Electronic Industries Association) 电子工业联合会 EOC(end of conversion) 转换结束 EPROM(erasable programmable read only memory) 可擦可编程只读存储器 EEPROM(electrically EPROM) 电可擦可编程只读存储器 ESD(electro-static discharge) 静电放电 FET(field-effect transistor) 场效应晶体管 FS(full scale) 满量程 F／V(frequency to voltage convertor) 频率／电压转换 FM(frequency modulation) 调频
lie的用法和短语例句 lie有躺下;位于;在于;平放;存在等意思，那么你知道lie的用法吗？下面跟着一起来学习一下，希望对大家的学习有所帮助！ lie的用法： lie的用法1 : lie的基本意思是指人“平躺〔卧〕，也可表示“（使）某物平放”。 lie的用法2 : lie是不及物动词，常与around, down, in, on 等词连用,不能用于被动结构。 lie的用法3 : lie有时可用作系动词，后接形容词（而不接副词）、现在分词或过去分词作表语。 lie的用法4: lie可用于表示“存在”的There...句型中位于there 之后，主谓倒装。 lie的用法5 : lie作“展现”解时，多以物作其主语。 lie的用法6 : lie的基本意思是“说谎”，指为了欺骗别人，通过已有预谋地或故意地歪曲了事实真相而直接生硬地所说的假话，是可数 名词。 lie的用法7 :在非正式文体中，可用lying代替lie。 lie的常用短语： lie about 〔around〕（v.+adv.）
lie back (v.+adv.) lie before (v.+prep.) lie beh indl (v.+adv.) lie beh ind2 (v.+prep.) lie bey ondl (v.+adv.) lie bey ond2 (v.+prep.) lie by1 (v.+adv.) lie by2 (v.+prep.) lie dow n (v.+adv.) lie heavy on (v.+adj.+prep.) lie in1 (v.+adv.) lie in2 (v.+prep.) lie off (v.+adv.) lie on 〔upon〕(v.+prep.) lie over (v.+adv.) lie to1 (v.+adv.) lie to2 (v.+prep.) lie的用法例句： 1. The blame for the Charlest on fiasco did not lie with him. 查尔斯顿惨败错不在他。 2. Lie face upwards with a cushi on un der your head. 头枕垫子仰卧。
世界机构组织联盟协会缩写全称 AAPP（Association of Asian Parliaments for Peace）亚洲议会和平协会 ACS（Association of Caribbean States）加勒比国家联盟 ACWW（Associated Country Women of the World）世界乡村妇女协会 ADB（Asian Development Bank）亚洲开发银行 AI（Amnesty International）大赦国际 AIE（Association of International Education）国际教育协会 ANRPC（Association of Natrual Rubber Producing Countries）天然橡胶生产国协会APA（Asian Parliamentary Assembly）亚洲议会大会 APSCO（Asia-Pacific Space Cooperation Organization）亚太空间合作组织 ASEAN（Association of Southeast Asian Nations）东南亚国家联盟 ATP（Association of Tennis Professional）国际网球联合会 BIE（International Exhibitions Bureau）国际展览局 BJS（Bureau of Justice Statistics）美国司法统计局 BSR（Business for Social Responsibility）商务社会国际责任协会 CARICOM（Caribbean Community and Common Market）加勒比共同体和共同市场CBA（Continental Basketball Association）国际篮球协会 CBDA（China Building Decoration Association）中国建筑装饰协会 CBSS（Council of the Baltic Sea States）波罗的海国家理事会 CCA（Chinese Chess Association）中国象棋协会 CDB（Caribbean Development Bank）加勒比开发银行 CIA（Central Intelligence Agency) 美国中央情报局 CIECA（China International E-Commerce Association）中国国际电子商务协会 CIS（Commonwealth of Independent States）独立国家联合体 CSBA（Chinese Billiards & Snooker Association）中国台球协会 CTTA（Chinese Table Tennis Association）中国乒乓球协会 DHS（United States Department of Homeland Security）美国国土安全局 DOD（Department of Defense）美国国家防御部 ECB（European Central Bank）欧洲中央银行 ECOWAS（Economic Community of West African States）西非国家经济共同体 EEC（European Economic Communities）欧洲经济共同体 EFTA（European Free Trade Association）欧洲自由贸易联盟 ERRI（European Rail Research Institute）欧洲铁道研究所 EU（the European Union）欧洲联盟 Expo（World Exposition）世界博览会 FATF（Financial Action Task Force on Money Laundering）反洗钱金融行动特别工作组FBI（Federal Bureau of Investigation) 美国联邦调查局 FIAB（International Volleyball Federation）国际排球协会 FIFA（International Federation of Association Football）国际足球协会 IAEA（International Atomic Energy Agency）国际原子能机构 IAEE（International Association of Exhibitions and Events）国际展览与项目协会 IASA（International Association for Sports Information）国际体育信息协会 IATA（International Air Transport Association）国际航空运输协会 IAU（International Association of Universities）国际大学协会
南桥芯片（South Bridge） 北桥芯片（North Bridge） Memory Controller Hub (MCH)－内存控制中心，Intel 8xx（例如820或840）芯片组中用于控制AGP、CPU、内存（RDRAM）等组件工作的芯片。 ICH（Input/Output Controller Hub，输入/输出控制中心） Front Buffer，前置缓冲 FSAA（Full Scene Anti－aliasing，全景抗锯齿） FSB: Front Side Bus，前置总线，即外部总线 FSE（Frequency Shifter Effect，频率转换效果） FSUB（Floationg Point Subtraction，浮点减） FTP（File Transfer Protocol，文件传输协议） FWH（Firmware Hub，固件中心） GART（Graphic Address Remappng Table，图形地址重绘表） GDI（Graphics Device Interface，图形设备接口） Ghost:（General Hardware Oriented System Transfer，全面硬件导向系统转移） Gigabyte GMCH（Graphics & Memory Controller Hub，图形和内存控制中心） GMR（giant magnetoresistive，巨型磁阻） Gouraud Shading，高洛德描影，也称为内插法均匀涂色 GPF（General protect fault，一般保护性错误） GPIs（General Purpose Inputs，普通操作输入） GPS（Global Positioning System，全球定位系统） GPU（Graphics Processing Unit，图形处理器） GTF（Generalized Timing Formula，一般程序时间，定义了产生画面所需要的时间，包括了诸如画面刷新率等） GUI（Graphics User Interface，图形用户界面） GVPP（Generic Visual Perception Processor，常规视觉处理器） HAL（Hardware Abstraction Layer，硬件抽像化层） hardware motion compensation（硬件运动补偿） HCI: Host Controller Interface，主机控制接口 HCT：Hardware Compatibility Test，硬件兼容性测试 HDA（head disk assembly，磁头集合） HDSL: High bit rate DSL，高比特率数字订阅线路 HDTV（high definition television，高清晰度电视） HEL: Hardware Emulation Layer（硬件模拟层） HiFD（high-capacity floppy disk，高容量软盘） high triangle count（复杂三角形计数）
学电脑必懂的53个英文单词和缩写（我不信你都认识） 潜龙飞天发表于2010年06月28日 09:36 阅读(1) 评论(0) 分类：个人日记 举报 PC：个人计算机Personal Computer ·CPU：中央处理器Central Processing Unit ·CPU Fan：中央处理器的“散热器”(Fan) ·MB：主机板MotherBoard ·RAM：内存Random Access Memory，以PC-代号划分规格，如PC-133，PC-1066，PC-2700 ·HDD：硬盘Hard Disk Drive ·FDD：软盘Floopy Disk Drive ·CD-ROM：光驱Compact Disk Read Only Memory ·DVD-ROM：DVD光驱Digital Versatile Disk Read Only Memory ·CD-RW：刻录机Compact Disk ReWriter ·VGA：显示卡(显示卡正式用语应为Display Card) ·AUD：声卡(声卡正式用语应为Sound Card) ·LAN：网卡(网卡正式用语应为Network Card) ·MODM：数据卡或调制解调器Modem ·HUB：集线器
·WebCam：网络摄影机 ·Capture：影音采集卡 ·Case：机箱 ·Power：电源 ·Moniter：屏幕，CRT为显像管屏幕，LCD为液晶屏幕 ·USB：通用串行总线Universal Serial Bus，用来连接外围装置 ·IEEE1394：新的高速序列总线规格Institute of Electrical Ａnd Electronic Engineers ·Mouse：鼠标，常见接口规格为PS/2与USB ·KB：键盘，常见接口规格为PS/2与USB ·Speaker：喇叭 ·Printer：打印机 ·Scanner：扫描仪 ·UPS：不断电系统 ·IDE：指IDE接口规格Integrated Device Electronics，IDE接口装置泛指采用IDE接口的各种设备 ·SCSI：指SCSI接口规格Small Computer System Interface，SCSI 接口装置泛指采用SCSI接口的各种设备 ·GHz：(中央处理器运算速度达)Gega赫兹/每秒 ·FSB：指“前端总线(Front Side Bus)”频率，以MHz为单位 ·ATA：指硬盘传输速率ATAttachment，ATA-133表示传输速率为133MB/sec
ACP Group of African, Caribbean and Pacific Region Countries 非洲、加勒比和太平洋国家集团 ADB Asian Development Bank 亚洲开发银行 ADB African Development Bank 非洲开发银行 APEC Asia-Pacific Economic Cooperation 亚太经济合作组织 ASEAN Association of Southeast Asian Nations 东南亚国家联盟公约 AU African Union 非洲联盟 BFA Boao Forum for Asia 博鳌亚洲论坛 BIE Bureau of International Expositions 国际展览局 BIS Bank for International Settlements 国际清算银行 CAC Codex Alimentarius Commission 食品法典委员会 CDB Caribbean Development Bank 加勒比开发银行 CFC Common Fund for Commodities 商品共同基金 CSD Commission on Sustainable Development 联合国可持续发展委员会 EBRD European Bank for Reconstruction and Development 欧洲复兴发展银行 ECLAC UN Economic Commission for Latin America and Caribbean 联合国拉丁美洲和加勒比经济委员会 ECOSOC UN Economic and Social Council 联合国经济和社会理事会 ESCAP UN Economic and Social Commission for Asia and the Pacific 联合国亚洲及太平洋经济社会委员会 ESCWA UN Economic and Social Commission for Western Asia 联合国西亚经济社会委员会 EU European Union 欧洲联盟G G 8 Summit Group of Eight Summit 八国集团首脑会议 G20 Group of Twenty 20国集团 G24 Group of Twenty Four 24国集团 IADB Inter-American Development Bank 美洲开发银行/泛美开发银行 IATA International Air Transport Association 国际航空运输协会 IBRD International Bank for Reconstruction and Development 国际复兴开发银行/世界银行 ICAO International Civil Aviation Organization 国际民航组织 ICC The International Chamber of Commerce 国际商会 ICO International Coffee Organization 国际咖啡组织 ICSID International Centre for Settlement of Investment Disputes 国际投资争端解决中心 IDA International Development Association 国际开发协会 IDB Inter-American Development Bank 美洲开发银行 IDB Islamic Development Bank 伊斯兰开发银行 IEA International Energy Agency 国际能源机构
计算机硬件英汉对照表 VDD、VCC 电源 5VSB = 5V StandBy 待机5V电源 Acer--> 宏基公司?]@8 A/D--> 模拟/数据(@= Address bus--> 地址总线-=:!g ALT=Alternate--> 转换键/更改/更动=. ALT=Alteration Switch--> 转换开关rP AMD=Advanced Micro Devices Inc. --> 高级微设备公司G^(WN AMI=American Megatrends Inc. --> 美国米格特雷德公司%@lu~ AGP=Accelerated Graphics Port --> 图形加速端口} API=Application Program Interface --> 应用程序接口Z6#e9- APM=Advanced Power Driver --> 高级动力驱动器"^p!"_ ASCII=American Standard Code for Information Interchange 美国信息交换用标准码t2L BIN --> 收集器/二进制+ZTo-u BIOS=Basic Input/Output System --> 基本输入输出系统V%iI` Bit --> 位=RQ Block --> 模块d BS=Backspace --> 退格键^l[?7 Cache --> 高速缓存X9
使用电脑必懂的53个英文单词和缩写
使用电脑必懂的53个英文单词和缩写 ·PC：个人计算机Personal Computer ·CPU：中央处理器Central Processing Unit ·CPU Fan：中央处理器的“散热器”(Fan) ·MB：主机板MotherBoard ·RAM：内存Random Access Memory，以PC-代号划分规格，如PC-133，PC-1066，PC-2700 ·HDD：硬盘Hard Disk Drive ·FDD：软盘Floopy Disk Drive ·CD-ROM：光驱Compact Disk Read Only Memory ·DVD-ROM：DVD光驱Digital Versatile Disk Read Only Memory ·CD-RW：刻录机Compact Disk ReWriter ·VGA：显示卡(显示卡正式用语应为Display Card) ·AUD：声卡(声卡正式用语应为Sound Card) ·LAN：网卡(网卡正式用语应为Network Card) ·MODM：数据卡或调制解调器Modem ·HUB：集线器 ·WebCam：网络摄影机 ·Capture：影音采集卡 ·Case：机箱 ·Power：电源
·Moniter：屏幕，CRT为显像管屏幕，LCD为液晶屏幕 ·USB：通用串行总线Universal Serial Bus，用来连接外围装置·IEEE1394：新的高速序列总线规格Institute of Electrical Ａnd Electronic Engineers ·Mouse：鼠标，常见接口规格为PS/2与USB ·KB：键盘，常见接口规格为PS/2与USB ·Speaker：喇叭 ·Printer：打印机 ·Scanner：扫描仪 ·UPS：不断电系统 ·IDE：指IDE接口规格Integrated Device Electronics，IDE接口装置泛指采用IDE接口的各种设备 ·SCSI：指SCSI接口规格Small Computer System Interface，SCSI接口装置泛指采用SCSI接口的各种设备 ·GHz：(中央处理器运算速度达)Gega赫兹/每秒 ·FSB：指“前端总线(Front Side Bus)”频率，以MHz为单位·ATA：指硬盘传输速率AT Attachment，ATA-133表示传输速率为133MB/sec ·AGP：显示总线Accelerated Graphics Port，以2X，4X，8X表示传输频宽模式 ·PCI：外围装置连接端口Peripheral Component Interconnect ·ATX：指目前电源供应器的规格，也指主机板标准大小尺寸·BIOS：硬件(输入/输出)基本设置程序Basic Input Output System
lie作平躺、撒谎时的过去式和过去分词 lie有平躺，撒谎等意思。你知道lie作平躺、撒谎时的过去式和过去分词是什么吗?下面是为你整理的lie 平躺、撒谎时的过去式和过去分词，希望大家喜欢! lie作平躺、撒谎时的过去式和过去分词平躺时的过去式和过去分词：lie;lied lied 撒谎时的过去式和过去分词：lie; lay lain lie的用法v. 躺下;位于;在于;平放;存在;延伸;说谎 n. 谎言 用作动词 用作不及物动词 S+～(+A) He lay there, flooded with pain, fear and hatred. 他躺在那儿,心中充满了痛苦、恐惧和憎恨。 As you make your bed, so you must lie. 自作自受。 Lasa lies too far away from Beijing. 拉萨离北京很远。 There lies〔lay〕... There lay a boy.
那里躺着一个男孩。 There lies a vast expense of golden crops before us. 一望无际的金灿灿的作物展现在我们的眼前。 There lies a bright future before us. 我们前途似锦。 S+～+ v -ed The national hero lies buried here. 那位民族英雄就安葬在这里。 His motives lay concealed. 他的动机不明。 S+～+ v -ing She lies sleeping soundly. 她躺在床上,睡得香甜极了。 The goods lie wasting in the warehouse. 货物闲放在仓库里。 lie的词语用法v. lie的基本意思是指人“平躺〔卧〕”,也可表示“(使)某物平放”。 lie是不及物动词,常与around, down, in, on等词连用,不能用于被动结构。 lie有时可用作系动词,后接形容词(而不接副词)、现在分词或过去分词作表语。 lie可用于表示“存在”的There...句型中,位于there之后,主谓