Comparison of Press-Pack IGBT at Hard Switching and Clamp Operation for Medium Voltage Converters
Rodrigo Alvarez,Felipe Filsecker,Steffen Bernet
Technische Universitaet Dresden
Helmholzstrasse9
Dresden,Germany
Email:Rodrigo.alvarez@mailbox.tu-dresden.de
Keywords
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Abstract
The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applica-tions.These new semiconductors were already studied in detail for hard switching[1]and for clamp operation[2].Nevertheless,a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far.
This paper compares the switching behavior,the switching losses and the safe operating area trajectories
of the new85mm,4.5kV,1.2kA press-pack SPT+IGBT for hard switching and clamp operation.The methods used for the experimental characterization and comparison are explained in detail.
Introduction
Nowadays medium voltage converters are essential for the application areas industry,traction,marine
and energy.They increase the ef?ciency of processes,allowing better control of the energy?ow.Power semiconductors are the basic building block of medium voltage converters,and their development has enabled a substantial improvement of the converter technology during the last years[3–5].Up to now,
IGBT modules and IGCT press pack devices have shared the market of self commutated medium voltage converters.Recent trends suggest that self-commutated converters will be the dominating technology for applications below30MV A in the middle term[6,7].
Press-pack IGBTs combine the advantages of IGBT dies with those of press-pack housing,making them
an attractive alternative to IGCTs[8–11].The static and switching behavior of the new85mm,4.5kV,
1.2kA press-pack SPT+IGBT at hard switching was described in[1].Reference[2]proposes the use
of a clamp circuit for the aforementioned IGBT.An IGBT press pack device offers the potential of a
high power cycling capability,an explosion free converter design,and low switching and total losses. Obviously,the IGBT press pack devices have become an interesting alternative to IGCTs in high power medium voltage applications.[8,10]
This paper presents a detailed comparison of the switching behavior,the switching losses and the semi-conductor stress of both modes of operation for diverse collector currents and junction temperatures.
Semiconductor Data and Test Bench
For the comparison of the switching behavior and switching losses of the new4.5kV,1.2kA press-
pack Soft-Punch-Through Plus(SPT+)IGBT T1200EB45E four con?gurations have been tested:?Hard Switching with a stray inductance of120nH
?Clamp1with L cl-1=1μH
?Clamp2with L cl-2=2μH
?Clamp3with L cl-3=5.6μH
Table I:Semiconductor data
Device Diode IGBT
Manufacturer In?neon Westcode
Model D1031SH T1200EB45E
Diameter62.8mm85mm
Si-area3097mm24284mm2
Active Si-area A aSi2463mm22142mm2
R thJH(2sides)14.1K/kW9K/kW
Table II:Semiconductor core values
Diode IGBT
V RRM4500V V CES4500V
I FRMSM2300A V DC-link2800V
I FA VM1470A I C(DC)2132A
I RM1500A I C(nom)1200A
C
(a)
C
(b)
Figure1:Test bench schematic diagram for(a)hard switching and for(b)soft switching with clamp circuit The test setup includes the diode D1031SH as freewheeling diode D f as well as clamp diode D cl,and the commercially available gate unit C0030BG400(R G,on=3.3?and R G,off=2.2?).The semiconductor data are summarized in Tables I and II.The test bench schematic diagram for the different operation modes is shown in Fig.1.The clamp circuit design is detailed in Table III.
The test circuit is a buck converter,which allows the study of the switching behavior of an active switch (e.g.IGBT,IGCT)and its corresponding freewheeling diode through the use of a double-pulse switching pattern[3].The dc-link was buffered near to the stack by an extra capacitor C stb(220μF)in order to
Table III:Test bench and current snubber setup
Test bench Clamp circuit
C dc 4.5mF C cl10μF
C stb220μF R cl0.5?
L Load1mH L cl1,2,5.6μH
V dc 2.5kV
(a)(b)
Figure2:Experimental setup(a)IGBT stack for hard switching,(b)stack with clamp circuit achieve a low stray inductance.
A robust mechanical design was accomplished using2mm-thick copper plates connecting the dc-link capacitor C dc,the additional buffer capacitor C stb and the stack.Thus,the mechanical construction of the test bench is able to withstand short circuit currents of about200kA in case of a device failure.The two diodes D prot limit possible negative voltages across the dc-link capacitor,preventing an oscillation of the short circuit current and the fuse F avoids the complete discharge of the dc-link capacitors through the stack in failure case limiting the maximum short circuit current to value of less than60kA.These are two important components of the safety concept of the test bench.
The junction temperatures of the devices are adjusted by two ring heaters mounted in the stack,control-ling the case temperature[3].The dc-link capacitor is charged by a high-voltage power supply before the measurements are carried out.A partially automated measurement system was used.The values of V dc and I L are set using a LabVIEW program on a PC connected to the test bench by optical?ber cables. The measurements are captured by two8bit four-channel digital oscilloscopes(Tektronix TDS714L), capable of working at a500MS/s sample rate.The storage and analysis of the data is carried out on an extra computer.The experimental setup is shown in Fig.2.
Comparison of4.5kV,1.2kA Press-Pack IGBT at Hard Switching and Clamp Operation
The press-pack IGBT was characterized for hard switching and clamp operation for different gate resis-tances R G,collector currents i C,dc-link voltages V dc and junction temperatures T j,as Table IV shows. Hard switching and clamp operation are compared regarding the stress in the safe operating area(SOA), peak power,semiconductor switching losses and clamp switching losses.The de?nitions of the quantities used for the calculations(e.g.d i/dt,d v/dt)correspond with those presented in[1,2].
Comparison of SOA Trajectories and Maximum Instantaneous Power
The press-pack IGBT and the freewheeling diode feature a smooth switching behavior in all investigated operating points.Waveforms of device voltages,currents and instantaneous power as well as SOA tra-jectories at V dc=2.5kV,i C=1.2kA,T j=125?C and the lowest recommended gate resistance illustrate the behavior of the semiconductors for the selected hard switching and clamp operation(Figs.3to5).
(a)
(b)(c)
Figure3:IGBT turn-off behavior(a)waveforms,(b)peak power,(c)Safe Operating Area trajectories(T j=125?C, V DC=2.5kV and i C=1.2kA)
(a)
(b)(c)
Figure4:IGBT turn-on behavior(a)waveforms,(b)peak power,(c)Safe Operating Area trajectories(T j=125?C, V DC=2.5kV and i C=1.2kA)
Table IV:Conducted measurements
Hard Switching
Variable Value
V dc2000and2500V
i L100,300,600,900,1200,1500and1800A
T j25,60,90,125?C
Lσ120and210nH
R G,on-1...3 3.3,5.6and6.8?
R G,off-1...3 2.2,3.6and6.8?
Clamp Operation
Variable Value
V dc2000and2500V
i L100,300,600,900,1200,1500and1800A
T j25,60,90,125?C
L cl1,2,3 1.0,2.0and5.6μH
The turn-off behavior of the IGBT is almost not in?uenced by the different clamp con?gurations,con-?rming the adequate selection of the clamp components.The clamp inductance L cl induces a small overvoltage caused by the demagnetization(Fig.3a),which does not affect the peak power(Fig.3b),but slightly increases the turn-off losses by about8%compared to hard switching.
The clamp inductance has a remarkable in?uence on the turn-on transient,changing the d i C/dt from 4.2kA/μs for GU-1(R G,on-1=3.3?and R G,on-1=2.2?)at hard switching to0.5kA/μs for operation with L cl-3,keeping d v CE/dt at roughly3.5kV/μs(Fig.4a).Moreover,the clamp reduces the turn-on stress of the IGBT in contrast to hard switching:the collector current i C rises with a low device voltage, which reduces the IGBT turn-on peak power by approximately95%from5.15MW for hard switching to0.23MW for L cl-3=5.6μH(Fig.4b).The turn-on SOA traces of the clamp-operated IGBTs show a substantially larger distance to the SOA margins than the IGBT at hard switching(Fig.4c).Obviously, the maximum collector current i C at IGBT turn-on is smaller for IGBTs at clamp operation,due to the reduction of d i C/dt,which also affects the reverse-recovery behavior and losses of the corresponding freewheeling diode.
As expected for the diode,the reverse recovery current is reduced as the clamp inductance L cl is in-creased,see Fig.5a(a lower d i D/dt reduces the reverse recovery charge).Accordingly,the diode presents the highest stress for the operation with clamp1(L cl-1),caused by the larger voltage peak generated through the combination of a still considerable d i D/dt and the relatively large stray inductance of the clamp circuit con?guration(Fig.5b).An increase of L cl reduces the d i D/dt,the peak reverse recovery current and the rate of current change of the decrease of the reverse recovery current.Thus,the instanta-neous peak power decreases for L cl-2and L cl-3.
The diode turn-off SOA traces show that the hard switching operation approaches to the i D margins of the SOA,whereas the clamp operation increases the distance to this limit,but reduces the distance to the diode voltage v D limit(Fig.5c).The diode presents maximum stress at turn-off transients;the clamp con?guration can reduce or increase this stress depending on the relation between clamp inductance, stray inductance,peak reverse recovery current and rate of change of the decrease of the reverse recovery current.A poor design can generate large diode voltage peaks,increasing the stress of the diode.
For the studied operating points,the press-pack IGBT is subject to the largest stress at hard switching during turn-on,and with clamp operation during turn-off transients.The maximum stress is reduced by about40%compared to hard switching,due to the addition of a clamp circuit.
Comparison of Losses
The main goal of the use of the clamp con?guration is the reduction of the IGBT switching losses.Of course also the diode losses and the total converter losses should not increase compared to hard switching. The semiconductor switching losses of IGBT and diode(E sw,SC)are de?ned as:
E sw,SC=E on,IGBT+E off,IGBT+E off,Diode(1) with
E on,IGBT:IGBT turn-on switching losses
E off,IGBT:IGBT turn-off switching losses
(a)
(b)
(c)
Figure 5:Diode turn-off behavior (a)waveforms,(b)peak power,(c)Safe Operating Area trajectories (T j =125?C,V DC =2.5kV and i C =1.2kA)
E off,Diode :Diode turn-off switching losses
In case of clamp operation,the clamp losses are calculated by (2),which includes the losses of the clamp diode E D,cl and clamp resistor E R,cl .Stationary losses of the clamp inductor (caused by the parasitic ohmic resistance)and the clamp capacitor (caused by the equivalent parallel resistance)are neglected.
E cl =E D,cl +E R,cl
(2)
The sum of the semiconductor and clamp switching losses of the four selected con?gurations were com-pared at V dc =2.5kV ,T j =125?C and i C =600and 1200A.The results can be seen in Fig.6.The values on top of the columns are the sum of the semiconductor and clamp switching losses (E sw,SC+cl )and the values in parentheses are the semiconductor switching losses.
The semiconductor switching losses were reduced by 13to 30%(clamp 1to 3respectively)for clamp operation compared to hard switching.The largest loss reduction by the clamp circuit was achieved during IGBT turn-on.However,the sum of the semiconductor and clamp switching losses were reduced by less than 3%at 600A and less than 11%at 1200A ,which means that a major part of the turn-on losses are transferred from the IGBT to the clamp resistance R cl .
The larger reduction of the semiconductor switching losses is achieved by L cl-3.However,the selection of a clamp should consider the stress of the semiconductors,both switching and clamp losses and particular speci?cations for the application (e.g.d v /dt,power density,reliability,mounting cost,etc.).
For example,in the studied cases,clamp 2presents a good trade off between a reduction of semicon-ductor switching losses,clamp switching losses and stress of the diode.The diode stress is increased marginally (3.37%),achieving a reduction of the semiconductor switching losses of 25%and a reduc-tion of the semiconductor and clamp switching losses of 8%.This allows the reduction of the cooling system or a higher converter output power.However,?nally an optimum for criteria like volume,weight,ef?ciency and costs must be found.The realization of a clamp seems to be an interesting option.
Figure6:Semiconductor and clamp switching losses(V dc=2.5kV,T j=125?C,left i C=600A,right i C=1200A) Conclusions
This paper shows a detailed comparison of the switching behavior and switching losses of the press-pack IGBT T1200EB45E at hard switching and clamp operation.It shows that the use of clamp circuits for press-pack IGBTs features interesting characteristics like reduced switching losses(up to30%)and less stress of the semiconductors(lower d i C/dt,reverse recovery current and peak power for IGBT and diode). The optimum clamp circuit will depend on the speci?cation requirements of the particular application. The saved semiconductor switching losses enable an increase of the converter power or switching fre-quency in medium voltage converters,since both characteristics are limited thermally by the semicon-ductor losses and the cooling con?guration.It is remarkable that the sum of switching and clamp losses are lower than at hard switching.For example the sum of switching and clamp losses are reduced by about3%at50%and11%at100%rated current.
References
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1 234市场概况篇 产品比较篇 公司分析篇 技术趋势篇
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第一节释义 在本核查意见中，除另有说明外，下列词语或简称具有如下特定含义： 中国南车 指 中国南车股份有限公司 中国北车 指 中国北车股份有限公司 本次合并、本次交易 指 按照合并双方约定的合并原则，技术上采取中国南车 吸收合并中国北车的方式进行合并；合并后新公司承 继及承接中国南车与中国北车的全部资产、负债、业 务、人员、合同、资质及其他一切权利与义务，从而 实现双方对等合并的行为。 合并双方 指 中国南车和中国北车 合并后新公司 指 中国南车和中国北车实施本次合并后的公司 南车集团 指 中国南车集团公司 北车集团 指 中国北方机车车辆工业集团公司 本核查意见 指 本《中国国际金融有限公司关于中国南车股份有限公 司、中国北车股份有限公司合并实施情况之独立财务 顾问核查意见》 《合并协议》、合并协议 指 中国南车与中国北车于2014年12月30日签署的附生效条件的《中国南车股份有限公司与中国北车股份 有限公司之合并协议》 A股股票/A股指 以人民币标明股票面值、在上交所上市挂牌交易的股
中国南车集团株洲电力机车研究所简介 中国南车集团株洲电力机车研究所始创于1959年，是一家服务于轨道交通机车车辆行业的科技型企业，隶属于中国南方机车车辆工业集团公司，总部坐落在美丽的湘江之滨、素有“中国电力机车摇篮”之称的省株洲市。 中国南车集团株洲电力机车研究所（含事业本部）及其下属企业株洲南车时代电气股份、株洲时代新材料科技股份，现有员工5000余人、资产总额超过50亿元，年销售收入已逾20亿元。其中，中国南车集团株洲电力机车研究所作为控股母公司履行控股管理及孵化发展新产业的职能；株洲南车时代电气股份定位于作轨道交通电传动装备的领先者，并向强相关领域拓展；株洲时代新材料科技股份定位于作减振降噪产品、高分子复合改性材料和绝缘材料产业的领跑者。 株洲所及其下属企业主要从事机车电传动技术及工业、民用变流技术的应用研究和工程化研究，承担电力机车、燃机车、地铁及轻轨车辆、客车、大型养路机械、电动汽车用电气控制装置以及电力电子器件、传感器、新材料等产品的开发与生产。产品广泛应用于铁路、城轨、矿山、冶金、化工、机械、电力、建筑及汽车等行业，并出口北美、欧洲、西亚、东南亚等地。 经过多年发展，株洲所在行业树立了较高的声誉。现已成为国家变流技术工程研究中心的依托单位、城市轨道牵引设备交流传动与控制系统国产化定点单位、国家级牵引电气设备检验站的挂靠单位、IEC/TC9行业标准的国归口单位、全国牵引电气设备与系统标准化技术委员会秘书处挂靠单位。株洲所是省重点高技术企业，拥有科技产品进出口自主经营权，拥有博士后科研工作流动站。
株洲所一贯秉承“诚信、敬业、创新、超越”的企业精神，始终致力于为轨道交通装备技术水平的提升提供最优的解决方案和产品，尤其在电传动系统集成方面形成了自主开发和持续创新的能力，为“韶山”系列电力机车、“奥星”交流传动电力机车、“中原之星”城际动车组、“中华之星”高速动车组及“东风”系列、“西部之光”燃机车提供了性能优良的电子控制、网络、变流装置，有力地推动了中国轨道交通行业的发展。 “科技兴企，文化育人”。株洲所正以全新的面貌朝着“做轨道交通电传动技术与产品的领先者、核心技术向相关产业进行多元化的佼佼者、在资本市场上规运作的成功者”的目标努力迈进。 时代电气2008届毕业生计划
2020年新能源汽车产业链深度报告 导语 根据国内近几年单车装电量数据，2015-2019年乘用车单车带电量总体呈增长趋势，其中2018-2019年分别提高30%、27%，增速逐渐放缓，未来动力电池单车价值量将逐步趋于平稳。 一、寻找非电池零部件最强阿尔法 （一）背景：为何此时关注非电池零部件？ 2020年起全球新能源汽车销量增长开始提速。短期受疫情冲击全球新能源汽车销量下滑，长期来看，国内市场政策开启新一轮补贴周期，动力电池以高镍三元、磷酸铁锂、CTP方案等多层次技术创新降本增效，推动下游整车盈利恢复，而欧洲市场在最严碳排放及补贴激励下有望放量并率先进入新平价周期，政策与技术良性互动有望促进销量增长提速。
回顾新能源汽车产业链演进历程，动力电池产业链率先得到发展，集中度大幅提升，2016-2019年全球动力电池装机量CR3分别为46.3%、46.7%、63.1%、61.6%，2016-2019年国内CR3则分别为54.3%、51.5%、66.9%、73.4%。产业链各细分赛道中，除正极材料洗牌仍将持续，电解液、负极材料基本出清，龙头集中度趋于稳定，而动力电池、隔膜经历过去三年的洗牌，龙头集中度均明显提高逼近上限，细分领域阿尔法开始减弱。 动力电池率先进入降本增效阶段，推动下游新能源汽车放量。电池组价格2016Q1-2018Q4显著下跌，磷酸铁锂/三元电池价格降幅分别达 到67%和57%，带来新能源汽车销量释放，从而推动2016-2018年国
内新能源乘用车销量复合增速超50%。下游放量倒推中游供应链的整合，非电池零部件因此迎来洗牌契机。 我们认为此时点非电池零部件值得研究和投资的理由在于： （1）非电池零部件价值量比肩电池材料。动力电池因成本占比较大，率先成为产业研究的重点。以纯电动乘用车为例，单车成本中占比最大的零部件是动力电池，约占40%左右，其中正极材料占14%，隔膜、负极材料、电解液分别占3%左右。其次是以电驱动桥为代表的电机电控部分，约占11%。热管理所占比例约为5%，电源4%，继电器2%。电机电控成本与正极材料相近，而热管理、电源和继电器成本
南车收购世界知名海工企业SMD公司 4月15日，中国南车旗下子公司株洲南车时代电气股份有限公司斥资约1.3亿英镑（约合12亿人民币）在英国纽卡斯尔正式收购世界知名海工企业Specialist Machine De velopments Limited （SMD）100%的股权，收购完成后，中国南车打造陆海两栖产业集群的新格局凸显。 南车时代电气成立于2005年，是中国轨道交通装备行业处于领先地位的车载电气系统集成商和供应商，拥有完全独立自主知识产权的电气牵引和网络控制技术标准和体系。目前在国内高铁、大功率电力机车、城市轨道车辆市场的综合占有率超过60%以上，世界上现有运营时速最快的380A高铁动车组，就是由其提供牵引和控制两大关键系统。该公司2006年12月在香港H股上市，2014年，年营业收入突破百亿元。 英国SMD公司是全球深海机器人第二大提供商和国际领先水平海底工程机械制造商，主要提供以深海应用为主的、适应极端恶劣环境的、工作级和高可靠性的、远程遥控自动化的水下工程机械和深海机器人设备。在海底自推进式挖沟、线缆敷设工程机械领域，占有全球半壁市场，也是全球首屈一指的商业海底采矿设备提供商，其产品遍及30多个国家和地区。 “收购SMD公司并不是一时的冲动，而是我们长久以来追求的梦想。”主导此次收购的南车时代电气董事长丁荣军说到，“实际上，早在五、六年前，南车时代电气就开始尝试进入海洋工程装备产业领域。目前，该公司研制的多套国产船舶电力驱动变频系统，相继装载各类高端船舶上，并实现商业化运营，此次收购SMD公司，只是公司着力发展海洋工程装备产业战略的关键一步。未来，深海机器人产业可与目前公司的海上风电