UNISONIC TECHNOLOGIES CO., LTDUF840 MOSFET8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.FEATURES* 8A, 500V, Low R DS(ON)(0.85Ω)* Single Pulse Avalanche Energy Rated* Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds* Linear Transfer Characteristics * High Input ImpedanceSYMBOL*Pb-free plating product number: UF840LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3PackingUF840-TA3-T UF840L-TA3-T TO-220 G D STube UF840-TF3-T UF840L-TF3-T TO-220F G D S TubeGABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless Otherwise Specified.)PARAMETER SYMBOL RATINGS UNITDrain to Source Voltage (T J =25℃~125℃) V DSS 500 V Drain to Gate Voltage (R GS = 20k Ω, T J =25℃~125℃) V DGR 500 V Gate to Source Voltage V GS ±20 VContinuous 8.0 ATc = 100℃ I D5.1 A Drain CurrentPulsed I DM 32 ATotal Power Dissipation (Ta = 25℃)Derating above 25℃P D125 1.0 WW/Single Pulse Avalanche Energy Rating(V DD =50V, starting T J =25℃, L=14mH, R G =25Ω, peak I AS = 8A)E AS 510 mJOperating Temperature Range T OPR -55 ~ +150 Storage Temperature Range T STG -55 ~ +150 Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to befunctional, but does not guarantee specific performance limits.2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.THERMAL DATAPARAMETER SYMBOL RATINGS UNITThermal Resistance Junction-Ambient θJA 62.5Thermal Resistance Junction-Case θJc 1.0/WELECTRICAL SPECIFICATIONS (T a =25℃, unless Otherwise Specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BV DSS I D = 250µA, V GS = 0V (Figure 16) 500 V Gate to Threshold Voltage V GS(THR)V GS = V DS , I D = 250µA 2 4 V On-State Drain Current (Note 1) I D(ON) V DS > I D(ON) x R DS(ON)MAX , V GS = 10V 8 AV DS = Rated BV DSS , V GS = 0V 25µAZero Gate Voltage Drain Current I DSSV DS =0.8xRated BV DSS ,V GS =0V,T J = 125℃ 250µAGate to Source Leakage Current I GSS V GS = ±20V ±100nA Drain to Source On Resistance(Note 1)R DS(ON)I D = 4.4A, V GS = 10V (Figure 14, 15) 0.8 0.85ΩForward Transconductance (Note 1) g FS V DS ≥ 50V, I D = 4.4A (Figure 18) 4.9 7.4 S Turn-On Delay Time t DLY(ON) 15 21nsRise Time t R 21 35nsTurn-Off Delay Time t DLY(OFF) 50 74nsFall Time t FV DD =250V, I D ≈ 8A, R G = 9.1Ω, R L =30Ω (Note 2) 20 30ns Total Gate Charge Q G(TOT) 42 63nCGate to Source Charge Q GS 7 nC Gate to Drain “Miller” Charge Q GDV GS =10V, I D =8A,V DS =0.8 x Rated BV DSS I G(REF) =1.5mA (Figure 20) (Note 3) 22 nC Input Capacitance C ISS 1225 pFOutput Capacitance C OSS 200 pFReverse - Transfer Capacitance C RSSV DS = 25V, V GS = 0V, f = 1.0MHz(Figure 17)85 pF NOTE : 1. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature.INTERNAL PACKAGE INDUCTANCEPARAMETER SYMBOLMIN TYP MAXUNITInternal Drain InductanceMeasured from the contact screw on tab to center of die Measured from the drain lead(6mm from package) to center of die L D3.54.5 nHnHInternal Source InductanceMeasured from the source lead(6mm from header) to source bond padL S7.5 nHRemark: Modified MOSFET symbol showing the internal devices inductances as below.GSOURCE TO DRAIN DIODE SPECIFICATIONSPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNITSource to Drain Diode Voltage(Note 1)V SD T J = 25℃, I SD = 8.0A, V GS = 0V(Figure 19) 2 VContinuous Source to Drain Current I SD 8 APulse Source to Drain Current I SDM Note 232AReverse Recovery Time t RR T J = 25℃, I SD = 8.0A, dI SD /dt = 100A/µs 210 475 970nsReverse Recovery Charge Q RR T J = 25℃, I SD = 8.0A, dI SD /dt = 100A/µs 2 4.6 8.2µC NOTE : 1. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.GTEST CIRCUITS AND WAVEFORMSV GSV DSV DD 0VVARY tp TO OBTAINREQUIRED PEAK I ASFIGURE 1. UNCLAMPED ENERGY TEST CIRCUITBV DSSFIGURE 2. UNCLAMPED ENERGY WAVEFORMSV DDFIGURE 3. SWITCHING TIME TEST CIRCUITTEST CIRCUITS AND WAVEFORMS (Cont.)FIGURE 4. RESISTIVE SWITCHING WAVEFORMSVDS(ISOLATEDFIGURE 5. GATE CHARGE TEST CIRCUITFIGURE 6. GATE CHARGE WAVEFORMSTYPICAL CHARACTERISTICSP o w e r D i s s i p a t i o n M u l t i p l i e rCase Temperature, T C (℃)501001501.2Figure 7. Normalized Power Dissipation vs. CaseTemperature 1.00.60.200.40.8D r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)75100150Figure 8. Maximum Contionuous Drain Currentvs. Case Temperature01255025246810100.1Drain to Source Voltage, V DS (V)D r a i n C u r r e n t , I D (A )Figure 10. Forward Bias Safe Operating Area1010111010Rectangular Pulse Duration, t 1(s)N o r m a l i z e d T r a n s i e n t T h e r m a l I m p e d a n c e , Z θJ CFigure 9. Normalized Maximum TransientThermal Impedance110-510-410-310-210-1101010D r a i n C u r r e n t , I D (A )Drain to Source Voltage, V DS (V)250Figure 11. Output Characteristics050391506D r a i n C u r r e n t , I D (A )Drain to Source Voltage, V DS (V)Figure 12. Saturation Characteristics00369TYPICAL CHARACTERISTICS(Cont.)D r a i n t oS o u r c e C u r r e n t , I D S (O N ), (A )Gate to Source Voltage, V SD (V)210Figure 13. Transfer Characteristics0.01110100D r a i n t o S o u r c e on R e s i s t a n c e , r D S (O N ) ( )Case Temperature , T C (℃)83240Figure 14. Drain to Source on Resistance vs.Voltage and Drain Current 002241646810N o r m a l i z e d D r a i n t o S o ur c e o n R e s i s t a n c e V o l t a g eJunction Temperature , T J (℃)Figure 15. Normalized Drain to Source on Resistance vs. Junction TemperatureN o r m a l i z e d D r a i n t oS o u r c e B r e a k d o w n V o l t a g eJunction Temperature , T J (℃)0Figure 16. Normalized Drain to Source Breakdown Voltagevs. Junction Temperature0.75-600.851.0520-40-20Figure 17. Capacitance vs. Drain to Source VoltageC a p a c i t a n c e , C (p F )Drain to Source Voltage , V DS (V)016002525T r a n s c o n d u c t a n c e , g F S (S )Drain Current, I D (A)Figure 18. Transconductance vs. Drain Current30369TYPICAL CHARACTERISTICS(Cont.)S ou r c e t o D r a i n C u r r e n t , I S D (A )Source to Drain Voltage, V SD (V)Figure 19. Source to Drain DIODE Voltage0.1101001.0G a t e t o S o u r ce V o l t a g e , V G S (V )Gate Charge , Q G (nC)Figure 20. Gate to Source Voltage vs.Gate Charge8412168。
