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FMW6中文资料

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EMX4 / UMW6N / UMW10N / UMX4N /
Transistors
FMW6 / FMW10 / IMX4

High transition frequency (dual transistors)

EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4

!Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)

3) Low output capacitance. (Cob=0.95pF)

!
Equivalent circuit

UMW6N(3)(2)(1)(4)(5)FMW6(3)(4)(5)(2)(1)(3)(2)(1)(4)(5)UMW10(3)(4)(5)(2)(1)FMW10EMX4 / UMX4N(3)(2)(1)(4)(5)(6)IMX4
(4)(5)(6)

(3)(2)(1)
!Absolute maximum ratings (Ta = 25°C)
ParameterSymbolVCBOVCEOVEBOICPcTjTstgLimits
3018350300(TOTAL)150(TOTAL)EMX4 / UMW6N / UMW10N / UMX4NFMW6 / FMW10 / IMX4150−55~+150UnitVVVmAmW°C°CCollector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation

Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

∗1
∗2

!Electrical characteristics (Ta = 25°C)
ParameterSymbolMin.Typ.Max.UnitConditions

Transition frequency
BVCBOBVCEOBVEBOICBOIEBOVCE(sat)hFEhFE1 / hFE2fT30183−−27−−0.5−−−−−−−1−−−0.50.52700.51.62VVVµAµA−−VMHz∗Cob60015000.95−pFIC=10µAIC=1mAIE=10µAVCB=10VVEB=2VVCE/IC=10V/10mAVCE/IC=10V/10mA, f=200MHzVCB/f=10V/1MHz, IE=0AIC/IB=20mA/4mAVCE/IC=10V/10mA∗Transition frequency of the device.Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage
DC current transfer ratio

Output capacitance
hFE pairing

元器件交易网www.cecb2b.com
EMX4 / UMW6N / UMW10N / UMX4N /
Transistors
FMW6 / FMW10 / IMX4

!Package, marking, and packaging specifications
Type
UMW6N

UMT5
W6
TR3000EMX4EMT6X4T2R
8000

UMW10N
UMT6
W10
TR
3000

FMW6
SMT5
W6
T148
3000FMW10SMT6W10T1483000IMX4SMT6X4T1083000UMX4NUMT6X4TR3000

Package
Marking
Code
Basic ordering unit (pieces)

!External dimensions (Units : mm)
UMW6NEach lead has same dimensions0.90.150to0.10.1Min.0.72.11.30.652.0(4)(1)(5)0.21.25(2)0.65(3)ROHM : UMT5EIAJ : SC-88AFMW6Each lead has same dimensions0to0.11.10.80.3to0.60.151.62.82.90.951.9(4)(5)(1)0.3(3)0.95(2)ROHM : SMT5EIAJ : SC-74AUMW10N / UMX4NEach lead has same dimensionsROHM : UMT6EIAJ : SC-880to0.1(6)2.01.30.90.150.70.1Min.2.10.650.21.25(1)0.65(4)(3)(2)(5)FMW10 / IMX4Each lead has same dimensionsROHM : SMT6EIAJ : SC-74(6)(5)(4)0.3to0.60.150.31.10.80to0.1(3)2.81.61.92.90.95(2)0.95(1)Each lead has same dimensionsROHM : EMT6EMX4
0
.
2
2
1.2
1.6

(1)

(2)(5)
(3)
(6)
(4)

0
.
1
3
0
.
5

0
.
5
0
.
5
1.01

.

6

元器件交易网www.cecb2b.com

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BZW06-7V8B中文资料

BZW06-7V8B中文资料

1)Non-repetitive current pulse see curve I PPM = f (t r )Höchstzulässiger Spitzenwert eines einmaligen Strom-Impulses, siehe Kurve I PPM = f (t r )2)Valid, if leads are kept at ambient temperature at a distance of 10 mm from caseGültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 3)Unidirectional diodes only – Nur für unidirektionale Dioden 107.01.2003Unidirectional and bidirectionalUnidirektionale und bidirektionaleTransient Voltage Suppressor DiodesSpannungs-Begrenzer-DiodenPeak pulse power dissipation 600 W Impuls-Verlustleistung Maximum stand-off voltage 5.8...376 VMaximale Sperrspannung Plastic case – Kunststoffgehäuse DO-15 (DO-204AC)Weight approx. – Gewicht ca.0.4 gPlastic material has UL classification 94V-0Gehäusematerial UL94V-0 klassifiziertDimensions / Maße in mmStandard packaging taped in ammo pack see page 16Standard Lieferform gegurtet in Ammo-Pack siehe Seite 16For bidirectional types (suffix “B”), electrical characteristics apply in both directions.Für bidirektionale Dioden (Suffix “B”) gelten die elektrischen Werte in beiden Richtungen.Maximum ratings and CharacteristicsKenn- und GrenzwertePeak pulse power dissipation (10/1000 :s waveform)T A = 25/C P PPM 600 W 1)Impuls-Verlustleistung (Strom-Impuls 10/1000 :s)Steady state power dissipation T A = 25/C P M(AV) 5 W 2)Verlustleistung im DauerbetriebPeak forward surge current, 60 Hz half sine-wave T A = 25/CI FSM 100 A 3)Stoßstrom für eine 60 Hz Sinus-HalbwelleOperating junction temperature – Sperrschichttemperatur T j – 50…+175/C Storage temperature – Lagerungstemperatur T S – 50…+175/CMax. instantaneous forward voltage I F = 50 AV BR # 200 V V F < 3.0 V 3)Augenblickswert der DurchlaßspannungV BR > 200 V V F < 6.5 V 3)Thermal resistance junction to ambient airR thA < 45 K/W 2)Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to leadR thL< 15 K/WWärmewiderstand Sperrschicht – Anschlußdraht2F:\Data\Wp\DatBlatt\Einzelblätter\bzw06.wpdMaximum ratingsGrenzwerteType TypStand-off voltage Sperrspanng Max. rev. current Max. Sperrstrom at / bei V WM Breakdown voltage at I T = 1 mA Abbruch-Spannung bei I T = 1 mA *) at / bei I T = 10 mA Max. clamping voltage Max. Begrenzer-Spanng at / bei I PPM (10/1000:s) V WM [V]I D [:A] V BR min. [V]V BR max. [V]V C [V]I PPM [A]BZW 06-5V85.810006.8 ± 5% 6.45...7.14 *)10.557BZW 06-6V4 6.45007.5 ± 5%7.13...7.88 *)11.353BZW 06-7V07.022008.2 ± 5%7.79...8.61 *)12.150BZW 06-7V87.78509.1 ± 5%8.65...9.5513.445BZW 06-8V58.551010 ± 5%9.5...10.514.541BZW 06-9V49.4511 ± 5%10.5...11.615.638BZW 06-1010.2512 ± 5%11.4...12.616.736BZW 06-1111.1513 ± 5%12.4...13.718.233BZW 06-1312.8515 ± 5%14.3...15.821.228BZW 06-1413.6516 ± 5%15.2...16.822.527BZW 06-1515.3518 ± 5%17.1...18.925.224BZW 06-1717.1520 ± 5%19.0...21.027.722BZW 06-1918.8522 ± 5%20.9...23.130.620BZW 06-2020.5524 ± 5%22.8...25.233.218BZW 06-2323.1527 ± 5%25.7...28.437.516BZW 06-2625,6530 ± 5%28.5...31.541.514.5BZW 06-2828.2533 ± 5%31.4...34.745.713.1BZW 06-3130.8536 ± 5%34.2...37.849.912.0BZW 06-3333.3539 ± 5%37.1...41.053.911.1BZW 06-3736.8543 ± 5%40.9...45.259.310.1BZW 06-4040.2547 ± 5%44.7...49.464.89.3BZW 06-4443.6551 ± 5%48.5...53.670.18.6BZW 06-4847.8556 ± 5%53.2...58.877.07.8BZW 06-5353.0562 ± 5%58.9...65.185.07.1BZW 06-5858.1568 ± 5%64.6...71.492.0 6.5BZW 06-6464.1575 ± 5%71.3...78.8103 5.8BZW 06-7070.1582 ± 5%77.9...86.1113 5.3BZW 06-7877.8591 ± 5%86.5...95.5125 4.8BZW 06-8585.85100 ± 5%95.0...105137 4.4BZW 06-9494.05110 ± 5%105...116152 3.9BZW 06-1021025120 ± 5%114...126165 3.6BZW 06-1111115130 ± 5%124...137179 3.4BZW 06-1281285150 ± 5%143...158207 2.9BZW 06-1361365160 ± 5%152...168219 2.7BZW 06-1451455170 ± 5%162...179234 2.6BZW 06-1541545180 ± 5%171...189246 2.4BZW 06-1711715200 ± 5%190...210274 2.2BZW 06-1881885220 ± 5%209...231301 2.0BZW 06-2132135250 ± 5%237...263344 1.8BZW 06-2392395280 ± 5%266...294384 1.7BZW 06-2562565300 ± 5%285...315414 1.6BZW 06-2732735320 ± 5%304...336438 1.6BZW 06-2992995350 ± 5%332...368482 1.6BZW 06-3423425400 ± 5%380...420548 1.3BZW 06-3763765440 ± 5%418 (462)6031.31)Valid, if leads are kept at ambient temperature at a distance of 10 mm from caseGültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 307.01.2003For bidirectional types (suffix “B”), electrical characteristics apply in both directions.Für bidirektionale Dioden (Suffix “B”) gelten die elektrischen Werte in beiden Richtungen.The standard tolerance of the breakdown voltage for each type is ± 5%.Die Toleranz der Arbeitsspannung jeder Diode beträgt in der Standardausführung ± 5%.e.g.:BZW 06-171B = bidirectional diode V WM $ 171 V at I D = 5 :A, V BR = 200 V (± 5%)BZW 06-6.4 = unidirectional diode, V WM $ 6.4 V at I D = 500 :A, V BR = 7.5 V (± 5%)。

6R1MBI100P-160中文资料

6R1MBI100P-160中文资料


2.4 0.35 0.25 0.45 0.08
1.0 200 2.8 1.2 0.6 1.0 0.3 1.0
mA
Thermal characteristics
Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.14 0.84 0.55 0.08 Unit °C/W
Diode Module
Applications
· Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
11
32
3
3.4
Ø 2.1
2 x t1
R1
arc m 6R1MBi100P-160 on . te ole esign obs w d e d b or ne le du nd f e Equivalent Circuit Schematic sch me is ct recom odu ot r N is p h T
20000
10000
Th
arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p
4 Ic= 100A Ic= 50A 2 Ic= 25A 0 2 3 4 5 5 10 15 20 25
PM75RLA060资料

PM75RLA060资料


2-φ5.5 MOUNTING HOLES
16 3
2-φ2.5
17.5 12
N
32 55
12 (SCREWING DEPTH) 7
1
5
9
13
19
14.5 17.5
P
6-M5 NUTS
B
10.75 32.75
U
V
W
23
23
19-s0.5
12 23
13 31
13.5 11.75
22
+ –
1 0.5
Terminal code
Fault Output Supply Voltage
IFO
Fault Output Current
Condition Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN • Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC Sink current at UFO, VFO, WFO, FO terminals
Ratings
Unit
600
V
75
A
150
A
297
PM75RLA060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Symbol VCC(PROT) VCC(surge) TC Tstg Viso
Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage
RF1S30N06LESM资料

RF1S30N06LESM资料


NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, V GS = 0V, Figure 11 VGS = VDS, ID = 250µA, Figure 10 VDS = Rated BVDSS , VGS = 0 VDS = 0.8 x Rated B VDSS, VGS = 0, TC = 150oC MIN 60 1 VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 25V, VGS = 0V, f = 1MHz Figure 12 VDD = 48V, ID = 30A, RL = 1.6Ω Figures 18, 19 TYP 11 88 30 40 51 28 1.8 1350 290 85 MAX 2 25 250 ±10 0.047 140 100 62 34 2.6 1.55 80 UNITS V V µA µA µA Ω ns ns ns ns ns ns nC nC nC pF pF pF
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg