SDB2301F中文资料

3.6ADESCRIPTIONThe ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.PIN CONFIGURATION SOT-23-3L1.Gate2.Source3.DrainS: Subcontractor Y: Year Code A: Process CodeFEATUREz 20V/3.6A, R DS(ON) = 80m-ohm@VGS = 4.5Vz 20V/2.4A, R DS(ON) = 95m-ohm@VGS = 2.5Vz Super high density cell design forextremely low R DS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L package design3.6AABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted )Parameter Symbol Typical Unit Drain-Source Voltage V DSS 20 V Gate-Source VoltageV GSS +/-12V Continuous Drain Current (TJ=150J ) T A =25¢JT A =70J I D2.8 2.2A Pulsed Drain CurrentI DM 10 A Continuous Source Current (Diode Conduction) I S 1.6 A Power DissipationT A =25¢J T A =70JP D 1.250.8W Operation Junction Temperature T J 150 J Storgae Temperature RangeT STG -55/150 J Thermal Resistance-Junction to AmbientR cJA 100J /W3.6AELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted )Parameter Symbol Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V GS =0V,I D =10uA 20 V Gate Threshold Voltage V GS(th) V DS =V GS ,I D =50uA 0.451.2 VGate Leakage CurrentI GSS V DS =0V,V GS =8V 100nAV DS =20V,V GS =0V 1Zero Gate Voltage Drain CurrentI DSS V DS =20V,V GS =0V T J =55J10 uAOn-State Drain Current I D(on) V DS 5V,V GS =4.5V V DS 5V,V GS =2.5V6 4 ADrain-source On-Resistance R DS(on)V GS =4.5V,I D =3.6AV GS =2.5V,I D =3.1A0.05 0.07 0.080.095Forward Transconductance g fsV DS =5V,I D =3.6V 10 SDiode Forward Voltage V SDI S =-1.6A,V GS =0V 0.85 1.2 VDynamicTotal Gate Charge Qg 5.4 10 Gate-Source Charge Qgs 0.65Gate-Drain Charge Qgd V DS =10V,V GS =4.5VI D -3.6A 1.4nC Input Capacitance Ciss 340Output CapacitanceCoss 115Reverse Transfer Capacitance CrssV DS =10V,V GS =0VF=1MHz 33pF 12 25Turn-On Timet d(on)t r 36 60 34 60 Turn-Off Timet d(off) t fV DD =10V,R L =5.5I D =3.6A,V GEN =4.5VR G =610 25nSN Channel Enchancement Mode MOSFET ST2302 3.6ASOT-23-3L PACKAGE OUTLINEN Channel Enchancement Mode MOSFET ST2302 3.6ATYPICAL CHARACTERISTICSN Channel Enchancement Mode MOSFET ST2302 3.6ATYPICAL CHARACTERISTICS(25J Unless noted)。

0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
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SINGLE PHASE HALF WAVF 60HZ RESISTIVE OR INDUCTIVE LOAD 0.375”(9.5mm) LEAD LENGTHS
0
VZ, ZENER VOLTAGE (VOLTS)
LEAD TEMPERATURE, ℃
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARCTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES 10 INSTANTANEOUS REVERSE CURRENT,MICROAMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5 - TYPICAL TEMPERATURE COEFFICIENTS θ VZ TEMPERATURE COEFFICIENT (mV/℃) ＠ IZT ℃ 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000
5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
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MBR230LSFT1Surface MountSchottky Power RectifierPlastic SOD-123 PackageThis device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. I deally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size,it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers,PDAs and PCMCI A cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.Features•ăGuardring for Stress Protection •ăLow Forward V oltage•ă125°C Operating Junction Temperature •ăEpoxy Meets UL 94 V-0•ăPackage Designed for Optimal Automated Board Assembly •ăESD Ratings:Machine Model, CHuman Body Model, 3B•ăThis is a Pb-Free DeviceMechanical Characteristics•ăReel Options: MBR230LSFT1 = 3,000 per 7 in reel/8 mm tapeā•ăDevice Marking: L3N•ăPolarity Designator: Cathode Band •ăWeight: 11.7 mg (approximately)•ăCase: Epoxy, Molded•ăLead Finish: 100% Matte Sn (Tin)•ăLead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds•ăDevice Meets MSL 1 RequirementsPreferred devices are recommended choices for future use and best overall value.DevicePackageShipping †ORDERING INFORMATION†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MBR230LSFT1G SOD-123FL(Pb-Free)3000/Tape & ReelMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R30VAverage Rectified Forward Current (At Rated V R, T L = 105°C)I O 2.0A Peak Repetitive Forward Current(At Rated V R, Square Wave, 100 kHz, T L = 95°C)I FRM 4.0ANon-Repetitive Peak Surge Current(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)I FSM40A Storage Temperature T stg-55 to 150°C Operating Junction Temperature T J-55 to 125°C Voltage Rate of Change (Rated V R, T J = 25°C)dv/dt10,000V/m s THERMAL CHARACTERISTICSThermal Resistance, Junction-to-Lead (Note 1) Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Ambient (Note 2)R tjlR tjlR tjaR tja262132582°C/WStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Mounted with minimum recommended pad size, PC Board FR4.2.Mounted with 1 in. copper pad (Cu area 700 mm2).ELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 3)V F T J = 25°C T J = 100°C V(I F = 1.0 A) (I F = 2.0 A)0.380.430.300.37Maximum Instantaneous Reverse Current (Note 3)I R T J = 25°C T J = 100°C mA (V R = 30 V) 1.0253.Pulse Test: Pulse Width ≤ 250 m s, Duty Cycle ≤2%.TYPICAL CHARACTERISTICSFigure 3. Typical Reverse Current Figure 4. Maximum Reverse Current1010.1I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)I R , R E V E R S E C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)I R ,I O , A V E R A G E F O R W A R D C U R R E N T (A M P S )T L , LEAD TEMPERATURE (°C)Figure 5. Current Derating1.400.6P F O , A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )0.20.41.20.81.0I O , AVERAGE FORWARD CURRENT (AMPS)1.6Figure 6. Forward Power DissipationTYPICAL CHARACTERISTICSFigure 7. CapacitanceFigure 8. Typical Operating TemperatureDeratingV R , REVERSE VOLTAGE (VOLTS)101000C , C A P A C I T A N C E (p F )V R , DC REVERSE VOLTAGE (VOLTS)1151059585756570125T J , D E R A T E D O P E R A T I N G T E M P E R A T U R E (°C )1001101009080120r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EFigure 9. Thermal Response10000.10.00001t 1, TIME (sec)0.00010.0010.011101000.0000010.1PACKAGE DIMENSIONSSOD-123LF CA SE 498-01ISSUE A*For additional information on our Pb-Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*cNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.4.DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.DIM A MIN NOM MAX MINMILLIMETERS0.900.95 1.000.035INCHES A10.000.050.100.000b 0.700.90 1.100.028c 0.100.150.200.004D 1.50 1.65 1.800.059E 2.50 2.70 2.900.098L 0.550.750.950.0220.0370.0390.0020.0040.0350.0430.0060.0080.0650.0710.1060.1140.0300.037NOM MAX 3.40 3.60 3.800.1340.1420.150H E --0°8°0°8°qǒmm inchesǓON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

1.5 技术规格................................................................................................................................. 7
1.5.1
通用规格 ......................................................... 7
● 其他
· 绝对不要自行改造伺服驱动器。
注意
3
SAF
· 目录
第 1 章 型号与规格 .................................................................................................................... 6
2.4 标准连接............................................................................................................................... 11
2.4.1
电源端子 ........................................................ 11
● 防止火灾
注意
· 不要将伺服驱动器、伺服电机以及制动电阻安放在易燃物质上或靠近易燃物质。 · 不要将伺服驱动器暴露在有水气、腐蚀性气体、可燃性气体的物质的场所下使用，否则可能导致火灾。 · 当使用制动电阻时，如果出现错误的信号，请切断主电源。否则，制动电阻故障或类似故障可能使制动