BDW94A中文资料

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©2000 Fairchild Semiconductor InternationalRev. A, February 2000BDW94/A/B/CPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted

SymbolParameterValueUnits VCBO Collector-Base Voltage

: BDW94: BDW94A: BDW94B: BDW94C - 45 - 60 - 80- 100VVVV

VCEO Collector-Emitter Voltage: BDW94: BDW94A: BDW94B: BDW94C - 45 - 60 - 80- 100VVVV

IC Collector Current (DC) - 12A

ICP *Collector Current (Pulse) - 15A IB Base Current- 0.2A PC Collector Dissipation (TC=25°C) 80W TJ Junction Temperature 150°C TSTG Storage Temperature- 65 ~ 150°C

BDW94/A/B/CPower Linear and Switching Applications•Power Darlington TR•Complement to BDW93, BDW93A, BDW93B and BDW93C respectively

1.Base 2.Collector 3.Emitter1TO-220

元器件交易网www.cecb2b.com©2000 Fairchild Semiconductor InternationalRev. A, February 2000

BDW94/A/B/CElectrical Characteristics TC=25°C unless otherwise noted

* Pulse Test: PW=300µs, duty Cycle =1.5% PulsedSymbolParameterTest ConditionMin.Typ.Max.Units VCEO(sus) Collector-Emitter Sustaining Voltage

: BDW94: BDW94A: BDW94B: BDW94C IC = - 100mA, IB = 0 - 45 - 60 - 80- 100VVVV

ICBO Collector Cut-off Current: BDW94: BDW94A: BDW94B: BDW94C VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 100 - 100 - 100 - 100

µAµAµAµA ICEO Collector Cut-off Current

: BDW94: BDW94A: BDW94B: BDW94C VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0-1- 1- 1- 1mAmAmAmA

IEBO Emitter Cut-off Current VEB = - 5V, IC = 0- 2mA hFE* DC Current Gain VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A1000

75010020000

VCE(sat)* Collector-Emitter Saturation Voltage IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA - 2- 3VV

VBE(sat)* Base-Emitter Saturation Voltage IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA- 2.5- 4VV

VF* Parallel Diode Forward Voltage IF = - 5A IF = -1 0A- 1.3- 1.8- 2- 4VV

元器件交易网www.cecb2b.com©2000 Fairchild Semiconductor InternationalBDW94/A/B/CRev. A, February 2000

Typical CharacteristicsFigure 1. DC Current GainFigure 2. Collector-Emitter Saturation VoltageFigure 3. Base-Emitter On VoltageFigure 4. Output CapacitanceFigure 5. Safe Operating AreaFigure 6. Power Derating

-0.1-1-10-1001001k10k100kVCE = -3V

hFE, DC CURRENT GAIN

IC [A], COLLECTOR CURRENT-0.1-1-10-100-0.1-1

-10IC= 250 IB

VCE(sat) [V], SATURATION VOLTAGE

IC [A], COLLECTOR CURRENT

-0.0-0.8-1.6-2.4-3.2-4.0-0-4-8-12-16-20VCE= -3V

IC [A], COLLECTOR CURRENT

VBE [V], BASE-EMITTER VOLTAGE-1-10-10010100

1000f=1MHzIE=0

Cob[pF], CAPACTIANCE

VCB [V], COLLECTOR-BASE VOLTAGE

-1-10-100-1000-0.1-1-10-100

BDW94CBDW94BBDW94ABDW94DCIC MAX.5 ms1 ms

100uS

IC [A], COLLECTOR CURR

E

NT

VCE [V], COLLECTOR EMITTER VOLTAGE050100150200250020406080

100

120

PD [W], POWER DISSIPATION

Tc [oC], CASE TEMPERATURE

元器件交易网www.cecb2b.com4.50 ±0.209.90

±0.20

1.52 ±0.100.80 ±0.102.40 ±0.2010.00 ±0.201.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.10

15.90 ±0.20

10.08 ±0.3018.95MA

X.

(1.70)(3.70)(3.00)(1.4

6

)

(1.00)(4

5°)

9.20 ±0.20

13.08 ±0.20

1.30 ±0.101.30+0.10–0.05

0.50+0.10–0.052.54TYP[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

TO-220Package Demensions

©2000 Fairchild Semiconductor InternationalRev. A, February 2000BDW94/A/B/C

Dimensions in Millimeters元器件交易网www.cecb2b.com