BDW94A中文资料
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©2000 Fairchild Semiconductor InternationalRev. A, February 2000BDW94/A/B/CPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted
SymbolParameterValueUnits VCBO Collector-Base Voltage
: BDW94: BDW94A: BDW94B: BDW94C - 45 - 60 - 80- 100VVVV
VCEO Collector-Emitter Voltage: BDW94: BDW94A: BDW94B: BDW94C - 45 - 60 - 80- 100VVVV
IC Collector Current (DC) - 12A
ICP *Collector Current (Pulse) - 15A IB Base Current- 0.2A PC Collector Dissipation (TC=25°C) 80W TJ Junction Temperature 150°C TSTG Storage Temperature- 65 ~ 150°C
BDW94/A/B/CPower Linear and Switching Applications•Power Darlington TR•Complement to BDW93, BDW93A, BDW93B and BDW93C respectively
1.Base 2.Collector 3.Emitter1TO-220
元器件交易网www.cecb2b.com©2000 Fairchild Semiconductor InternationalRev. A, February 2000
BDW94/A/B/CElectrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% PulsedSymbolParameterTest ConditionMin.Typ.Max.Units VCEO(sus) Collector-Emitter Sustaining Voltage
: BDW94: BDW94A: BDW94B: BDW94C IC = - 100mA, IB = 0 - 45 - 60 - 80- 100VVVV
ICBO Collector Cut-off Current: BDW94: BDW94A: BDW94B: BDW94C VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 100 - 100 - 100 - 100
µAµAµAµA ICEO Collector Cut-off Current
: BDW94: BDW94A: BDW94B: BDW94C VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0-1- 1- 1- 1mAmAmAmA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0- 2mA hFE* DC Current Gain VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A1000
75010020000
VCE(sat)* Collector-Emitter Saturation Voltage IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA - 2- 3VV
VBE(sat)* Base-Emitter Saturation Voltage IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA- 2.5- 4VV
VF* Parallel Diode Forward Voltage IF = - 5A IF = -1 0A- 1.3- 1.8- 2- 4VV
元器件交易网www.cecb2b.com©2000 Fairchild Semiconductor InternationalBDW94/A/B/CRev. A, February 2000
Typical CharacteristicsFigure 1. DC Current GainFigure 2. Collector-Emitter Saturation VoltageFigure 3. Base-Emitter On VoltageFigure 4. Output CapacitanceFigure 5. Safe Operating AreaFigure 6. Power Derating
-0.1-1-10-1001001k10k100kVCE = -3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT-0.1-1-10-100-0.1-1
-10IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
-0.0-0.8-1.6-2.4-3.2-4.0-0-4-8-12-16-20VCE= -3V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE-1-10-10010100
1000f=1MHzIE=0
Cob[pF], CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1-10-100-1000-0.1-1-10-100
BDW94CBDW94BBDW94ABDW94DCIC MAX.5 ms1 ms
100uS
IC [A], COLLECTOR CURR
E
NT
VCE [V], COLLECTOR EMITTER VOLTAGE050100150200250020406080
100
120
PD [W], POWER DISSIPATION
Tc [oC], CASE TEMPERATURE
元器件交易网www.cecb2b.com4.50 ±0.209.90
±0.20
1.52 ±0.100.80 ±0.102.40 ±0.2010.00 ±0.201.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.10
15.90 ±0.20
10.08 ±0.3018.95MA
X.
(1.70)(3.70)(3.00)(1.4
6
)
(1.00)(4
5°)
9.20 ±0.20
13.08 ±0.20
1.30 ±0.101.30+0.10–0.05
0.50+0.10–0.052.54TYP[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220Package Demensions
©2000 Fairchild Semiconductor InternationalRev. A, February 2000BDW94/A/B/C
Dimensions in Millimeters元器件交易网www.cecb2b.com