74HC4075

  • 格式:pdf
  • 大小:102.67 KB
  • 文档页数:4

MM54HC4075󰁋MM74HC4075

Triple

3-Input

ORGateJanuary1988

MM54HC4075󰁋MM74HC4075Triple3-InputORGateGeneralDescriptionTheseORgatesutilizeadvancedsilicon-gateCMOStech-nologytoachieveoperatingspeedssimilartoLS-TTLgateswiththelowpowerconsumptionofstandardCMOSinte-gratedcircuits󰀟Allgateshavebufferedoutputs󰀷providinghighnoiseimmunityandtheabilitytodrive10LS-TTLloads󰀟The54HC󰁋74HClogicfamilyisfunctionallyaswellaspin-outcompatiblewiththestandard54LS󰁋74LSlogicfamily󰀟The54HC4075󰁋74HC4075isfunctionallyequivalentandpin-outcompatiblewiththeCD4075BandMC14075BmetalgateCMOSdevices󰀟AllinputsareprotectedfromdamageduetostaticdischargebyinternaldiodeclampstoVCCandground󰀟FeaturesYTypicalpropagationdelay󰀌11nsYWidepowersupplyrange󰀌2V–6VYLowquiescentcurrent󰀌20mAmaximum(74HCSeries)YLowinputcurrent󰀌1mAmaximumYFanoutof10LS-TTLloads

ConnectionDiagram

Dual-In-LinePackage

YeAaBaC

TL󰁋F󰁋5155–1TopViewOrderNumberMM54HC4075orMM74HC4075

C1995NationalSemiconductorCorporationRRD-B30M105󰁋PrintedinU󰀟S󰀟A󰀟AbsoluteMaximumRatings(Notes1󰁅2)IfMilitary󰁋Aerospacespecifieddevicesarerequired󰀷pleasecontacttheNationalSemiconductorSalesOffice󰁋Distributorsforavailabilityandspecifications󰀟SupplyVoltage(VCC)b0󰀟5toa7󰀟0VDCInputVoltage(VIN)b1󰀟5toVCCa1󰀟5VDCOutputVoltage(VOUT)b0󰀟5toVCCa0󰀟5VClampDiodeCurrent(IIK󰀷IOK)g20mADCOutputCurrent󰀷perpin(IOUT)g25mADCVCCorGNDCurrent󰀷perpin(ICC)g50mAStorageTemperatureRange(TSTG)b65󰀃Ctoa150󰀃CPowerDissipation(PD)(Note3)600mWS󰀟O󰀟Packageonly500mWLeadTemp󰀟(TL)(Soldering10seconds)260󰀃COperatingConditionsMinMaxUnitsSupplyVoltage(VCC)26VDCInputorOutputVoltage0VCCV(VIN󰀷VOUT)OperatingTemp󰀟Range(TA)MM74HCb40a85󰀃CMM54HCb55a125󰀃CInputRiseorFallTimesVCCe2󰀟0V(tr󰀷tf)1000nsVCCe4󰀟5V500nsVCCe6󰀟0V400ns

DCElectricalCharacteristics(Note4)TAe25󰀃C74HC54HCSymbolParameterConditionsVCCTAeb40to85󰀃CTAeb55to125󰀃CUnitsTypGuaranteedLimitsVIHMinimumHighLevel2󰀟0V1󰀟51󰀟51󰀟5VInputVoltage4󰀟5V3󰀟153󰀟153󰀟15V6󰀟0V4󰀟24󰀟24󰀟2VVILMaximumLowLevel2󰀟0V0󰀟50󰀟50󰀟5VInputVoltage󰀂󰀂4󰀟5V1󰀟351󰀟351󰀟35V6󰀟0V1󰀟81󰀟81󰀟8VVOHMinimumHighLevelVINeVIHorVILOutputVoltagelIOUTls20mA2󰀟0V2󰀟01󰀟91󰀟91󰀟9V4󰀟5V4󰀟54󰀟44󰀟44󰀟4V6󰀟0V6󰀟05󰀟95󰀟95󰀟9VVINeVIHorVILlIOUTls4󰀟0mA4󰀟5V4󰀟23󰀟983󰀟843󰀟7VlIOUTls5󰀟2mA6󰀟0V5󰀟75󰀟485󰀟345󰀟2VVOLMaximumLowLevelVINeVIHorVILOutputVoltagelIOUTls20mA2󰀟0V00󰀟10󰀟10󰀟1V4󰀟5V00󰀟10󰀟10󰀟1V6󰀟0V00󰀟10󰀟10󰀟1VVINeVIHorVILlIOUTls4󰀟0mA4󰀟5V0󰀟20󰀟260󰀟330󰀟4VlIOUTls5󰀟2mA6󰀟0V0󰀟20󰀟260󰀟330󰀟4VIINMaximumInputVINeVCCorGND6󰀟0Vg0󰀟1g1󰀟0g1󰀟0mACurrentICCMaximumQuiescentVINeVCCorGND6󰀟0V2󰀟02040mASupplyCurrentIOUTe0mANote1󰀌AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur󰀟Note2󰀌Unlessotherwisespecifiedallvoltagesarereferencedtoground󰀟Note3󰀌PowerDissipationtemperaturederating󰁚plastic‘‘N’’package󰀌b12mW󰁋󰀃Cfrom65󰀃Cto85󰀃C󰀥ceramic‘‘J’’package󰀌b12mW󰁋󰀃Cfrom100󰀃Cto125󰀃C󰀟Note4󰀌Forapowersupplyof5Vg10%theworstcaseoutputvoltages(VOH󰀷andVOL)occurforHCat4󰀟5V󰀟Thusthe4󰀟5Vvaluesshouldbeusedwhendesigningwiththissupply󰀟WorstcaseVIHandVILoccuratVCCe5󰀟5Vand4󰀟5Vrespectively󰀟(TheVIHvalueat5󰀟5Vis3󰀟85V󰀟)Theworstcaseleakagecurrent(IIN󰀷ICC󰀷andIOZ)occurforCMOSatthehighervoltageandsothe6󰀟0Vvaluesshouldbeused󰀟󰀂󰀂VILlimitsarecurrentlytestedat20%ofVCC󰀟TheaboveVILspecification(30%ofVCC)willbeimplementednolaterthanQ1󰀷CY’89󰀟

2ACElectricalCharacteristicsVCCe5V󰀷TAe25󰀃C󰀷CLe15pF󰀷tretfe6nsSymbolParameterConditionsTypGuaranteedUnitsLimittPHL󰀷tPLHMaximumPropagation1120nsDelay

ACElectricalCharacteristicsVCCe2󰀟0Vto6󰀟0V󰀷CLe50pF󰀷tretfe6ns(unlessotherwisespecified)TAe25󰀃C74HC54HCSymbolParameterConditionsVCCTAeb40to85󰀃CTAeb55to125󰀃CUnitsTypGuaranteedLimitstPHL󰀷tPLHMaximumPropagation2󰀟0V40115145171nsDelay4󰀟5V12232934ns6󰀟0V10202529nstTLH󰀷tTHLMaximumOutput2󰀟0V307595110nsRiseandFall4󰀟5V10151922nsTime6󰀟0V9131619nsCPDPowerDissipation(pergate)30pFCapacitance(Note5)CINMaximumInput5101010pFCapacitanceNote5󰀌CPDdeterminesthenoloaddynamicpowerconsumption󰀷PDeCPDVCC2faICCVCC󰀷andthenoloaddynamiccurrentconsumption󰀷ISeCPDVCCfaICC󰀟

3MM54HC4075󰁋MM74HC4075Triple3-InputORGatePhysicalDimensionsinches(millimeters)

OrderNumberMM54HC4075JorMM74HC4075JNSPackageJ14A

OrderNumberMM74HC4075NNSPackageN14ALIFESUPPORTPOLICYNATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFTHEPRESIDENTOFNATIONALSEMICONDUCTORCORPORATION󰀟Asusedherein󰀌1󰀟Lifesupportdevicesorsystemsaredevicesor2󰀟Acriticalcomponentisanycomponentofalifesystemswhich󰀷(a)areintendedforsurgicalimplantsupportdeviceorsystemwhosefailuretoperformcanintothebody󰀷or(b)supportorsustainlife󰀷andwhosebereasonablyexpectedtocausethefailureofthelifefailuretoperform󰀷whenproperlyusedinaccordancesupportdeviceorsystem󰀷ortoaffectitssafetyorwithinstructionsforuseprovidedinthelabeling󰀷caneffectiveness󰀟bereasonablyexpectedtoresultinasignificantinjurytotheuser󰀟NationalSemiconductorNationalSemiconductorNationalSemiconductorNationalSemiconductorCorporationEuropeHongKongLtd󰀟JapanLtd󰀟1111WestBardinRoadFax󰀌(a49)0-180-530858613thFloor󰀷StraightBlock󰀷Tel󰀌81-043-299-2309