614004135023;中文规格书,Datasheet资料
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2.1 2.0 1.02012-07-172012-07-172010-09-30SStSStSBaSStSBaWürth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm]F Typical Impedance Characteristics:H1: Classification Reflow Profile for SMT components:H2: Classification Reflow ProfilesProfile FeaturePreheat- Temperature Min (T smin ) - Temperature Max (T smax ) - Time (t s ) from (T smin to T smax )Ramp-up rate (T L to T P )Liquidous temperature (T L )Time (t L ) maintained above T L Peak package body temperature (T p )Time within 5°C of actual peak temperature (t p )Ramp-down rate (T P to T L )Time 25°C to peak temperature Pb-Free Assembly 150°C 200°C60-180 seconds 3°C/ second max.217°C60-150 seconds See Table H320-30 seconds 6°C/ second max.8 minutes max.refer to IPC/JEDEC J-STD-020DH3: Package Classification Reflow TemperaturePB-Free Assembly PB-Free Assembly PB-Free Assembly Package Thickness< 1.6 mm 1.6 - 2.5 mm ≥ 2.5 mmVolume mm³<350260°C 260°C 250°CVolume mm³350 - 2000260°C 250°C 245°CVolume mm³>2000260°C 245°C 245°Crefer to IPC/JEDEC J-STD-020DH Soldering Specifications:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-CNSWof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the wire isolation has to be avoided.If the product is potted in customer applications, the potting material might shrink during and after hardening. Accordingly to this the product is exposed to the pressure of the potting material with the effect that the core, wire and termination is possibly damaged by this pressure and so the electrical as well as the mechanical characteristics are endanger to be affected. After the potting material is cured, the core, wire and termination of the product have to be checked if any reduced electrical or mechanical functions or destructions have occurred.The responsibility for the applicability of customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Cleaning solvents which are used to clean the application might damage or change the characteristics of the component.Direct mechanical impact to the product shall be prevented as the ferrite material of the core could flake or in the worst case it could break. Product specific:Follow all instructions mentioned in the datasheet, especially:•The soldering profile has to be complied with according to the technical reflow soldering specification, otherwise no warranty will be su-stained.•All products are supposed to be used before the end of the period of 12 months based on the transfer of title, if not a 100% solderability can´t be warranted.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 744230181。
RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.•Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33%IMD — -34 dBc•Typical Two-Tone Performance @ 900 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33%IMD — -39 dBc•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features•Characterized with Series Equivalent Large-Signal Impedance Parameters •On-Chip RF Feedback for Broadband Stability •Integrated ESD Protection •RoHS Compliant•In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +68Vdc Gate-Source Voltage V GS -0.5, +12Vdc Storage Temperature Range T stg -65 to +150°C Operating Junction TemperatureT J150°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 76°C, 4 W PEP , Two-Tone Case Temperature 79°C, 4 W CWR θJC8.88.5°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1C (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)1.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.Document Number: MW6S004NRev. 4, 6/2009Freescale Semiconductor Technical DataMW6S004NT1Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T A = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——500nAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 50 mAdc)V GS(th) 1.22 2.7Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 50 mAdc)V GS(Q)— 2.7—Vdc Fixture Gate Quiescent Voltage (1)(V DD = 28 Vdc, I D = 50 mAdc, Measured in Functional Test)V GG(Q) 2.23 4.2Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 50 mAdc)V DS(on)—0.270.37VdcDynamic CharacteristicsReverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss —21—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —25—pF Input Capacitance(V DS = 28 Vdc, V GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)C iss—30—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f1 = 1960 MHz, f2 = 1960.1 MHz, Two-Tone Test Power Gain G ps 16.51820dB Drain EfficiencyηD 2833—%Intermodulation Distortion IMD —-34-28dBc Input Return LossIRL—-12-10dBTypical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G ps —19—dB Drain EfficiencyηD —33—%Intermodulation Distortion IMD —-39—dBc Input Return LossIRL—-12—dB1.V GG = 11/10 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic.MW6S004NT1Figure 1. MW6S004NT1 Test Circuit SchematicZ70.210″ x 1.220″ Microstrip Z80.054″ x 0.680″ Microstrip Z90.054″ x 0.260″ Microstrip Z100.025″ x 0.930″ MicrostripPCBArlon CuClad 250GX-0300-55-22, 0.020″, εr = 2.5Z10.054″ x 0.430″ Microstrip Z20.054″ x 0.137″ Microstrip Z30.580″ x 0.420″ Microstrip Z40.580″ x 0.100″ Microstrip Z50.025″ x 0.680″ Microstrip Z60.210″ x 0.100″ MicrostripV SUPPLYTable 6. MW6S004NT1 Test Circuit Component Designations and ValuesPartDescriptionPart Number Manufacturer C1100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C3, C6, C79.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C4, C510 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C810 μF, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet R1 1 k Ω, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R210 k Ω, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R310 Ω, 1/4 W Chip ResistorCRCW120610R0FKEAVishayMW6S004NT1Figure 2. MW6S004NT1 Test Circuit Component LayoutMW6S004NT1TYPICAL CHARACTERISTICS1420191716G p s , P O W E R G A I N (d B )100.1TWO−TONE SPACING (MHz)1100Figure 6. Intermodulation Distortion Productsversus Tone Spacing 26P in , INPUT POWER (dBm)1618222414Figure 7. Pulsed CW Output Power versusInput PowerI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )181520MW6S004NT1TYPICAL CHARACTERISTICSA C P R (dB )−70P out , OUTPUT POWER (WATTS) AVG.50−2040−3030−4020−5010−600.01110Figure 8. Single-Carrier CDMA ACPR, Power Gainand Drain Efficiency versus Output PowerP out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain versus Output Power 7151906171618234G p s , P O W E R G A I N (d B )1800−250f, FREQUENCY (MHz)Figure 11. Broadband Frequency Response−5−10−15−20210020502000195019001850S 11 (d B )851ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )0.118.517.516.515.5MW6S004NT1TYPICAL CHARACTERISTICS25010790T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF versus Junction TemperatureThis above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 4 W PEP, and ηD = 33%.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.106105104110130150170190M T T F (H O U R S )210230MW6S004NT1f = 1930 MHzZ o = 10 ΩZ loadZ sourcef = 1990 MHzf = 1930 MHzf = 1990 MHzV DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEPfMHzZ sourceWZ loadW1930 1.96 - j5.348.78 + j6.961960 1.89 - j5.108.93 + j7.461990 1.82 - j4.859.11 + j7.97Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Z source Z loadOutputMatchingNetworkFigure 13. Series Equivalent Source and Load ImpedanceMW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ5000.649-116.3407.902105.4200.056-73.7500.548-33.5705500.695-121.6807.50298.7900.053-80.5700.593-41.4806000.733-126.5607.11192.3800.049-87.0100.632-48.8906500.770-131.340 6.69986.2900.045-93.2800.669-56.0007000.800-135.740 6.30280.4500.041-99.1200.701-62.8107500.827-140.030 5.92274.8500.038-104.8500.727-69.2908000.848-143.950 5.55269.6300.035-110.1100.750-75.3508500.866-147.690 5.22064.5800.032-115.2200.770-81.1309000.882-151.140 4.89159.9700.029-119.9600.786-86.5709500.895-154.560 4.59755.4900.026-124.7900.800-91.73010000.907-157.590 4.31551.2400.024-129.0900.813-96.66010500.916-160.540 4.06047.1700.022-133.3700.824-101.34011000.923-163.310 3.81943.3400.020-137.4600.833-105.79011500.929-165.930 3.60139.6500.018-141.4400.840-110.05012000.935-168.430 3.39836.1100.017-145.3300.847-114.17012500.938-170.770 3.21032.7400.015-149.5400.851-118.06013000.942-173.030 3.03629.4900.014-153.4300.856-121.88013500.945-175.140 2.87526.3600.013-157.4600.859-125.52014000.948-177.170 2.72823.3300.012-161.9100.863-129.02014500.951-179.090 2.59020.4400.011-166.1800.866-132.39015000.953179.030 2.46417.6400.010-170.6300.869-135.65015500.954177.270 2.34714.9200.009-174.8900.872-138.76016000.955175.570 2.24012.3200.008179.9500.875-141.75016500.956173.980 2.1399.7400.008173.9200.877-144.65017000.957172.350 2.0477.2500.007167.7100.880-147.48017500.957170.800 1.958 4.8100.007161.8100.882-150.18018000.958169.340 1.879 2.4400.006155.3700.884-152.76018500.959167.920 1.8060.2600.006148.9400.886-155.23019000.959166.510 1.736-1.9800.005142.6300.887-157.58019500.960165.200 1.668-4.3100.005136.7400.888-160.05020000.959163.800 1.611-6.2400.005129.9100.890-162.07020500.959162.420 1.555-8.2900.005123.8100.891-164.19021000.958161.170 1.504-10.2700.005118.2000.892-166.14021500.958159.840 1.456-12.2100.005112.7400.893-168.06022000.957158.560 1.412-14.1300.005108.4600.894-169.84022500.957157.160 1.372-16.0100.005103.8400.896-171.61023000.955155.870 1.334-17.8700.00599.3100.896-173.26023500.954154.510 1.300-19.7000.00595.3600.897-174.83024000.953153.120 1.268-21.5100.00591.0300.898-176.39024500.953151.7301.238-23.2500.00587.4600.899-177.840MW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system) (continued)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ25000.952150.340 1.211-25.1200.00684.1600.899-179.27025500.950149.010 1.187-26.9200.00680.7800.897179.42026000.949147.380 1.166-28.6500.00677.8800.897178.12026500.948145.920 1.144-30.4200.00774.6700.898176.84027000.944144.200 1.121-32.3100.00771.3600.896175.48027500.944142.790 1.105-34.2300.00767.9800.897174.06028000.943141.020 1.088-36.0000.00763.9500.897172.93028500.941139.410 1.073-37.8700.00761.2300.896171.63029000.940137.640 1.058-39.7600.00859.8100.896170.33029500.938135.900 1.045-41.6800.00858.2800.896169.04030000.937133.8601.032-43.6100.00856.7400.895167.510分销商库存信息: FREESCALEMW6S004NT1。
description :A mmB mmC mmD mm Emm= Start of winding Marking = Inductance codeEigenschaften / properties Wert / valueEinheit / unittol.Induktivität /inductanceDC-Widerstand /DC-resistance DC-Widerstand /DC-resistance Nennstrom /rated currentSättigungsstrom /saturation current Eigenres.-Frequenz /self-res.-fequency33% Umgebungstemperatur / temperature:+20°CFerrit Endoberfläche / finishing electrode:CZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateKunde / customerFreigabe erteilt / general release:C Lötpad / soldering spec.:B Elektrische Eigenschaften / electrical properties:E Testbedingungen / test conditions:Luftfeuchtigkeit / humidity:It is recommended that the temperature of the part does F Werkstoffe & Zulassungen / material & approvals:Draht / wire:Class HG Eigenschaften / general specifications:Betriebstemp. / operating temperature: -40°C - + 125°C Sn/Ag/Cu - 96.5/3.0/0.5%DATUM / DATE : 2010-08-01max.mA Datum / date.................................................................................Unterschrift / signature Kontrolliert / approvedTestbedingungen / test conditions D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked SRFMHzUmgebungstemp. / ambient temperature: -40°C - + 85°C Basismaterial / base material:not exceed 125°C under worst case operating conditions.POWER-CHOKE WE-TPCA Mechanische Abmessungen / dimensions:1,60 typ.1,60typ.2,8 ± 0,2HP 34401 A für/for R DC und I DC0,860± 30%150,00µH220R DC typ 0,770I DC D Prüfgeräte / test equipment:HP 4274 A für/for L und/and Q @ 20°C @ 20°C ∆T=30 K 100 kHZ / 0,1V4207,0I sat |ΔL/L|<35%Version 5.....................................................................................................................................................................................................................................................Würth Elektroniktyp.R DC max typ.L max.mA typ.Version 44,8 ± 0,24,8 ± 0,2Type 4828Änderung / modificationVersion 1Version 2Version 6[mm]5,302,001,502,001,80MarkingABCDDEdescription :CZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateFreigabe erteilt / general release:Kontrolliert / approvedDATUM / DATE : 2010-08-01Würth ElektronikKunde / customer...................................................................................................................................................................POWER-CHOKE WE-TPCH Induktivitätskurve / Inductance curve :Version 4Version 5Änderung / modificationVersion 1Version 2D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Datum / dateUnterschrift / signature Version 6 ...................................................................................................................................................................Geprüft / checked 0,0020,0040,0060,0080,00100,00120,00140,00160,000,000,100,200,300,400,500,600,70L (µH )Current (A)Induktivität vs Strom (typ.) / Inductance vs Current (typ.)description :I Rollenspezifikation / tape and reel specification:A 8,0± 1,0mm B4,00± 0,1mma178± 0,5mm b 20,20± 0,1mm+ 0,5- 1,0d 50,0± 1,0mmCZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateWürth Elektronik...................................................................................................................................................................Würth Elektronik eiSos GmbH & Co.KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked Kontrolliert / approvedÄnderung / modification...................................................................................................................................................................Datum / dateUnterschrift / signature Gurtspezifikation / Tape specification: Rollenspezifikation / Reel specification:Freigabe erteilt / general release:Kunde / customermm 13,00POWER-CHOKE WE-TPCDATUM / DATE : 2010-08-01Version 5c Version 1Version 2Version 4Version 6Ø cadbThe force for tearing off cover tape is 20 to 70 grams in arrow direction150feeding directionThis electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety and reliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control),transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eiSos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.分销商库存信息: WURTH-ELECTRONICS 744043151。