Data Sheet No. PD60263
Typical ConnectionProduct SummaryV
OFFSET600 V max.IO+/-130 mA/270 mAVOUT10 V - 20 Vton/off (typ.)680 ns/150 nsDeadtime (typ.)520 nsHALF-BRIDGE DRIVERFeatures•Floating channel designed for bootstrap operation•Fully operational to +600 V•Tolerant to negative transient voltage, dV/dtimmune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout•3.3 V, 5 V, and 15 V logic compatible•Cross-conduction prevention logic•Matched propagation delay for both channels•Internal set deadtime•High side output in phase with HIN input•Low side output out of phase with LIN inputDescriptionThe IRS2103 is a high voltage, high speed powerMOSFET and IGBT drivers with dependent high andlow side referenced output channels. Proprietary HVICand latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input iscompatible with standard CMOS or LSTTL output, downto 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high sideconfiguration which operates up to 600 V.
Data Sheet No. PD60269
Typical ConnectionProduct SummaryV
OFFSET200 V max.IO+/-130 mA/270 mAVOUT10 V - 20 Vton/off (typ.)680 ns/150 nsDeadtime (typ.)520 nsHALF-BRIDGE DRIVERFeatures•Floating channel designed for bootstrap operation•Fully operational to +200 V•Tolerant to negative transient voltage, dV/dtimmune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout•3.3 V, 5 V, and 15 V logic compatible•Cross-conduction prevention logic•Matched propagation delay for both channels•Internal set deadtime•High-side output in phase with HIN input•Low-side output out of phase with LIN input
DescriptionThe IRS2003 is a high voltage, high speed powerMOSFET and IGBT drivers with dependent high- andlow-side referenced output channels. Proprietary HVICand latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input iscompatible with standard CMOS or LSTTL output, downto 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-sideconfiguration which operates up to 200 V.
Features
■ Hot-Molded / Industrial / Sealed
■ Locking-Bushing / Standard-Bushing
■ Meet MIL-R-94
Electrical Characteristics
Standard Resistance Range……….. A: 100 to 4M7 ohms
…………… B/C: 1K to 1M ohms
Resistance Tolerance………….……… ±5%,±10%,±20%
Absolute Minimum Resistance…………………… 15 ohms
(for total resistance values of 100 to 820 ohms inclusive)
………………………………………………………… 1%
(for total resistance values of 1K to 4700K ohms inclusive)
Contact Resistance Variation……….…………………… 5%
Insulation Resistance (100 VDC)….1,000 M ohms minimum
Power Rating: at 70℃
…………………………………… A: 0.5 watt
………………………………………. B/C: 0.25 watt
at 125℃ …………………… 0 watt
Environmental Characteristics
Temperature Range……….…………………-55℃ to +125℃
Vibration………………………………………………….. 15G
Shock……………………………………………………. 100G
Load Life: 1,000 hours, 70℃
………………………………A: 0.5 watt
Features and speciFications1.85 by 1.85mm
(.073 by .073”) pitch GbX*
Backplane connector system
in 2, 3, 4 and 5-pair columns
2 and 3 columns:
75650, 75370 differential
daughtercard
assemblies
75670, 75660 Lite daughtercard
assemblies
75676, 75666 Hybrid daughtercard
assemblies
75827, 75433 Backplane signal
Headers
75861, 75649 Lite Backplane signal
Headers
75492, 75331 Backplane power
4 and 5 columns:
75220, 75360 daughtercard
assemblies
75420 4-pair Lite
daughtercard
assemblies
75426 4-pair Hybrid
daughtercard
assemblies
75235, 75237 Backplane signal
Headers
75465 4-pair Lite Backplane
signal Header
75341, 75510 Backplane power
stand-alone Guide pin Kit:
75234
Features and BenefitsData rates up to 10 Gbps may now be achieved with the GbX 2 and 3-pair column daughtercard and backplane system. The 2 and 3-pair column system completes the GbX product offering, making it a complete solution for high-end telecommunication and datacommunication applications.
