BAR 68-05中文资料
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BAR 68-05
Jul-29-19991Silicon PIN Diode Array
Preliminary data
Common cathode
High power
Low impedance
123
VPS05161
EHA071793
12
A1A2C1/C2TypeMarkingOrdering CodePackagePin Configuration
3=C1/C2BAR 68-05PTsupon request1=A12=A2SOT-23
Maximum RatingsParameterValueSymbolUnit
Diode reverse voltageV50V
R
Forward current100I
FmA
250mWTotal power dissipation, T
S = tbd P
tot
Operating temperature rangeT
op-55 ... 150°C
Storage temperatureT
stg-55 ... 150
Thermal Resistance
Junction - ambient 1)R
thJA tbdK/W
Junction - soldering point R
thJS tbd
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAR 68-05
Jul-29-19992Electrical Characteristics at T
A = 25 °C, unless otherwise specified.
ParameterSymbolValuesUnit
min.typ.max.
DC characteristics
Breakdown voltage I
(BR) = 5 µAV
(BR)50--V
Reverse current
V
R = 30 VI
R--10nA
Forward voltage
I
F = 50 mAV
F-0.8151V
AC CharacteristicsDiode capacitance
V
R = 5 V, f = 1 MHz
V
R = 20 V, f = 1 MHz
V
R = 0 V, f = 100 MHzC
T
-
-
-
1.9
1.8
3
-
-
-pF
Forward resistance
I
F = 1 mA, f = 100 MHz
I
F = 10 mA, f = 100 MHzr
f
-
-
1.2
0.25
-
-
Charge carrier life time
I
F = 10 mA, I
R = 6 mA, I
R = 3 mA
rr-2.2-µs
Series inductanceL
s-1.8-nH
Intrinsic zone thicknessw-25-µm
BAR 68-05
Jul-29-19993Diode capacitance C
T = f (V
R)
f = 1MHz
05101520V30
VR1.5 1.6 1.7 1.8 pF2.0
CTForward resistance r
f = f(I
F) f = 100MHz
10 -2 10 -1 10 0 10 1 10 2 mA
IF-1 10 0 10 1 10 2 10
Ohm
RF
Forward current I
F = f (V
F)
TA = 25°C
0.00.10.20.30.40.50.60.70.8V1.0
VF-6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10
A
IF
BAR 68-05
Jul-29-19994Forward current I
F = f (T
A*;T
S)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
020406080100120°C150
TA,TS0 50 100 150 mA250
IF
tbd
Permissible Pulse Load R
thJS = f(t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s
tp0 10 1 10 2 10 3 10
K/W
RthJS
tbdPermissible Pulse Load
I
Fmax / IFDC = f(t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s
tp0 10 1 10 2 10 3 10
IFmax / IFDC
tbd
