TCMD1000中文资料
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TCMD10.. SeriesVishay Semiconductors
1 (12)www.vishay.comDocument Number 83513Rev. A2, 15–Dec–00
Optocoupler with Photodarlington OutputDescriptionThe TCMD10.. Series consist of a photodarlingtonoptically coupled to a gallium arsenide infrared-emitting diodes in an 4- lead up to 16- lead plasticMiniflat package. The elements are mounted on one leadframe using acoplanar technique, providing a fixed distancebetween input and output for highest safetyrequirements.
ApplicationsProgrammable logic controllers, modems, answeringmachines, general applications
FeaturesDLow profile package (half pitch)DAC Isolation test voltage Vio = 3.75 kVRMS
DLow coupling capacitance of typical 0.3 pF
DLow temperature coefficient of CTRDWide ambient temperature rangeDUnderwriters Laboratory (UL) 1577 recognized,file number E-76222DCSA (C-UL) 1577 recognized file number E- 76222 - Double ProtectionDCoupling System M
16467Coll.EmitterAnodeCath.4 PIN16 PIN
15238128
9
C
元器件交易网www.cecb2b.comTCMD10.. SeriesVishay Semiconductors
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Absolute Maximum Ratings Input (Emitter)ParameterTest ConditionsSymbolValueUnitReverse voltageVR6VForward currentIF60mAForward surge currenttp ≤ 10 msIFSM1.5APower dissipationTamb ≤ 25°CPV100mWJunction temperatureTj125°C
Output (Detector)ParameterTest ConditionsSymbolValueUnitCollector emitter voltageVCEO35VEmitter collector voltageVECO7VCollector currentIC80mAPeak collector currenttp/T = 0.5, tp ≤ 10 msICM100mAPower dissipationTamb ≤ 25°CPV150mWJunction temperatureTj125°C
CouplerParameterTest ConditionsSymbolValueUnitAC isolation test voltage (RMS)VIO 1)3.75kVTotal power dissipationTamb ≤ 25°CPtot250mWOperating ambient temperaturerangeTamb–40 to +100°C
Storage temperature rangeTstg–40 to +100°CSoldering temperatureTsd235°C1) Related to standard climate 23/50 DIN 50014
元器件交易网www.cecb2b.comTCMD10.. SeriesVishay Semiconductors
3 (12)www.vishay.comDocument Number 83513Rev. A2, 15–Dec–00
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)ParameterTest ConditionsSymbolMin.Typ.Max.UnitForward voltageIF = 50 mAVF1.251.6VJunction capacitanceVR = 0 V, f = 1 MHzCj50pF
Output (Detector)ParameterTest ConditionsSymbolMin.Typ.Max.UnitCollector emitter voltageIC = 100 mAVCEO35VEmitter collector voltageIE = 100 mAVECO7VCollector dark currentVCE = 10 V, IF = 0, E = 0ICEO100nA
CouplerParameterTest ConditionsSymbolMin.Typ.Max.UnitCollector emitter saturationvoltageIF = 10 mA, IC = 1 mAVCEsat0.3V
Cut-off frequencyIF = 10 mA, VCE = 5 V, RL = 100 Wfc10kHzCoupling capacitancef = 1 MHzCk0.3pF
Current Transfer Ratio (CTR)ParameterTest ConditionsTypeSymbolMin.Typ.Max.UnitI/IVCE = 2 V, IF = 1 mATCMD1000CTR6.08.0CF
VCE = 2 V, IF = 1 mATCMD4000CTR6.08.0
元器件交易网www.cecb2b.comTCMD10.. SeriesVishay Semiconductors
www.vishay.com4 (12)Rev. A2, 15–Dec–00Document Number 83513
Switching Characteristics ParameterTest ConditionsSymbolTyp.UnitRise timeV = 2 V, I =10 mA, R = 100 W (see figure 1)tr300msTurn-off timeCECL(g)toff250ms
RL50 ΩChannel IIChannel IIC = 10 mA;+VCCIFIF0
RG = 50 Ω tp
tp = 50 msT= 0.01
OscilloscopeRI = 1 MΩCI = 20 pF14779
Figure 1. Test circuit, non-saturated operation
tp
t
t0
010%90%100%
tr
td
ton
tstf
toff
IF
IC
96 11698
tppulse durationtddelay timetrrise timeton (= td + tr)turn-on timetsstorage timetffall timetoff (= ts + tf)turn-off time
Figure 2. Switching times
元器件交易网www.cecb2b.comTCMD10.. SeriesVishay Semiconductors
5 (12)www.vishay.comDocument Number 83513Rev. A2, 15–Dec–00
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0.80.91.01.11.21.3020406080100Tamb – Ambient Temperature ( °C )14389V – Forward Voltage ( V )FIF=10mAFigure 3. Forward Voltage vs. Ambient Temperature0.11.010.0100.01000.000.20.40.60.81.01.21.41.61.82.0VF – Forward Voltage ( V )14390FI – Forward Current ( mA )Figure 4. Forward Current vs. Forward Voltage0.50.60.70.80.91.01.11.21.31.41.5–30–20–100102030405060708090100Tamb – Ambient Temperature ( °C )14391CTR – Relative Current Transfer RatiorelVCE=5VIF=1mAFigure 5. Relative Current Transfer Ratio vs. Ambient Temperature110100100010000100000
2030405060708090100Tamb – Ambient Temperature ( °C )14392
I – Collector Dark Current,CEOwith open Base ( nA )
VCE=10VIF=0
Figure 6. Collector Dark Current vs. Ambient Temperature0.11.010.0100.01000.0
0.11.010.0100.0IF – Forward Current ( mA )14393
VCE=2VI – Collector Current ( mA )
CFigure 7. Collector Current vs. Forward Current
0.11.010.0100.0
0.11.010.0100.0VCE – Collector Emitter Voltage ( V )14394