2SC3314中文资料

500
300
FE
Tc = 100°C
100 25
50 −25
30
DC电流增益^ h
10
hFE的 - 我C
5
0.03
0.1
0.3
1
3
10
30
集电极电流Ir IC / IB = 10 V
1
VCE (sat) – IC
0.5
0.3
(V)
Tc = 100°C
集电极 CE
(A)
IC max(pulsed) *
C
10 IC max(continuous)
DC operation Tc = 25°C
1 ms * 10 ms * 100 ms *
集电极电1流I
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
芯片中文手册,看全文,戳
功率放大器应用
东芝晶体管硅NPN三重扩散型
2SC5949
• PC = 220W • 为了补充2SA2121
最大额定值
（ TC = 25℃）
特有
集电极基极电压
集电极 - 发射极电压
发射极基极电压 集电极电流 基极电流 集电极耗散功率 结温 存储温度范围
符
评级
Unit
(-sa发0t).1射极饱和电压
V 0.05
0.03
25 −25
0.01
0.03
0.1
0.3
1
3
10
30
集电极电流I
C (A)
100
(MHz)
T
10
fT– IC

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ICBO @ VCB (nA) *ICES *ICEV MAX 500 100 100 100 100 500 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 50 50 50* 50* 50* 50* 100 50 50 50 50 10 10 100* (V)
-0.30 ----4.50 4.50 4.50 4.50 4.50 4.50 4.50 4.50 4.50 4.50 5.0 5.0 2.0 2.0 2.0 5.0 5.0 5.0 5.0 5.0 4.50 4.50 1.0 1.0 1.0 1.0 5.0 1.0 1.0 1.0 1.0 1.0 5.0 0.35 1.0
ቤተ መጻሕፍቲ ባይዱ
VCEO VEBO (V) *VCES MIN 18 18 25 25 25 25 25 25 25 25 25 25 25 25 50 50 25 30 30 30 20 30 30 30 30 30 60 30 40 40 40 40 30 30 25 30 25 15 45 45 40 (V) MAX 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 6.0 6.0 5.0 5.0 6.0 5.0 5.0 4.0 4.0 6.0 7.0 7.0 6.0
NPN AMPL/SWITCH NPN AMPL/SWITCH NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE PNP AMPL/SWITCH PNP AMPL/SWITCH NPN AMPL/SWITCH NPN AMPL/SWITCH NPN AMPL/SWITCH NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN LOW NOISE NPN AMPL/SWITCH NPN AMPL/SWITCH PNP AMPL/SWITCH PN AMPL/SWITCH PNP LOW NOISE NPN AMPL/SWITCH NPN AMPL/ SWITCH PNP AMPL/SWITCH PNP AMPL/SWITCH NPN SAT SWITCH NPN LOW NOISE PNP LOW NOISE NPN AMPL/SWITCH

Package Dimensions
unit:mm 2038A
[2SC5551]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
VCE=5V, IC=1mA, ZO=50Ω
Freq (MHz) 100 200 300 400 500 600 700 800 900 1000 | S11 | 0.941 0.859 0.829 0.831 0.840 0.816 0.816 0.814 0.800 0.804 ∠ S11 –101.1 –141.0 –158.6 –169.5 –178.6 172.3 164.9 157.3 150.9 145.0 | S21 | 2.373 1.425 0.990 0.845 0.715 0.638 0.507 0.466 0.443 0.388 ∠ S21 119.9 93.8 79.4 69.2 61.1 54.7 49.8 47.0 45.7 47.3 | S12 | 0.088 0.097 0.088 0.074 0.058 0.055 0.064 0.098 0.134 0.173 ∠ S12 38.7 18.3 12.0 10.7 25.2 51.6 78.4 87.3 90.2 92.2 | S22 | 0.884 0.821 0.755 0.766 0.798 0.790 0.771 0.813 0.792 0.782 ∠ S22 –17.8 –25.2 –33.8 –41.9 –49.9 –58.4 –66.7 –75.0 –82.8 –90.0